CN111900183B - 一种均匀发光的集成单元二极管芯片 - Google Patents
一种均匀发光的集成单元二极管芯片 Download PDFInfo
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- CN111900183B CN111900183B CN201910372903.5A CN201910372903A CN111900183B CN 111900183 B CN111900183 B CN 111900183B CN 201910372903 A CN201910372903 A CN 201910372903A CN 111900183 B CN111900183 B CN 111900183B
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- 238000009792 diffusion process Methods 0.000 claims abstract description 19
- 239000011148 porous material Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000017525 heat dissipation Effects 0.000 description 11
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 206010035148 Plague Diseases 0.000 description 1
- 241000607479 Yersinia pestis Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 239000000463 material Substances 0.000 description 1
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- 238000001228 spectrum Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
Description
Claims (9)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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CN201910372903.5A CN111900183B (zh) | 2019-05-06 | 2019-05-06 | 一种均匀发光的集成单元二极管芯片 |
CN201911252656.1A CN110797370B (zh) | 2019-05-06 | 2019-05-06 | 一种集成单元二极管芯片 |
PCT/CN2020/088805 WO2020224599A1 (zh) | 2019-05-06 | 2020-05-06 | 一种集成单元二极管芯片 |
Applications Claiming Priority (1)
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CN201910372903.5A CN111900183B (zh) | 2019-05-06 | 2019-05-06 | 一种均匀发光的集成单元二极管芯片 |
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CN201911252656.1A Division CN110797370B (zh) | 2019-05-06 | 2019-05-06 | 一种集成单元二极管芯片 |
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CN111900183A CN111900183A (zh) | 2020-11-06 |
CN111900183B true CN111900183B (zh) | 2023-12-15 |
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CN201911252656.1A Active CN110797370B (zh) | 2019-05-06 | 2019-05-06 | 一种集成单元二极管芯片 |
CN201910372903.5A Active CN111900183B (zh) | 2019-05-06 | 2019-05-06 | 一种均匀发光的集成单元二极管芯片 |
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CN201911252656.1A Active CN110797370B (zh) | 2019-05-06 | 2019-05-06 | 一种集成单元二极管芯片 |
Country Status (2)
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CN (2) | CN110797370B (zh) |
WO (1) | WO2020224599A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110797370B (zh) * | 2019-05-06 | 2022-06-24 | 深圳第三代半导体研究院 | 一种集成单元二极管芯片 |
Citations (4)
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CN1877833A (zh) * | 2006-05-19 | 2006-12-13 | 广州南科集成电子有限公司 | U槽led集成芯片及制造方法 |
CN103258836A (zh) * | 2012-02-17 | 2013-08-21 | 华新丽华股份有限公司 | 高压发光二极管芯片及其制造方法 |
CN103390710A (zh) * | 2013-08-08 | 2013-11-13 | 聚灿光电科技(苏州)有限公司 | Led芯片及其制备方法 |
CN106328636A (zh) * | 2016-10-12 | 2017-01-11 | 聚灿光电科技股份有限公司 | 集成式led器件及其制造方法 |
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CN100382336C (zh) * | 2003-05-12 | 2008-04-16 | 胜华科技股份有限公司 | 有机发光二极管显示装置 |
CN101488547B (zh) * | 2008-12-30 | 2011-11-09 | 上海蓝光科技有限公司 | 一种发光二极管芯片结构及其制造方法 |
CN101924116B (zh) * | 2009-06-12 | 2014-04-23 | 刘胜 | 可扩展的超大尺寸发光二极管芯片及制造方法 |
KR101138975B1 (ko) * | 2009-09-15 | 2012-04-25 | 서울옵토디바이스주식회사 | 전파 발광셀 및 반파 발광셀을 갖는 교류용 발광 다이오드 |
JP5320270B2 (ja) * | 2009-11-25 | 2013-10-23 | 株式会社沖データ | 表示パネルの製造方法 |
KR101665932B1 (ko) * | 2010-02-27 | 2016-10-13 | 삼성전자주식회사 | 멀티셀 어레이를 갖는 반도체 발광장치, 발광모듈 및 조명장치 |
CN102097441B (zh) * | 2010-12-17 | 2013-01-02 | 电子科技大学 | 用于等离子显示屏驱动芯片的soi器件 |
JP2014045108A (ja) * | 2012-08-28 | 2014-03-13 | Toyoda Gosei Co Ltd | 半導体発光素子 |
CN102931322A (zh) * | 2012-11-16 | 2013-02-13 | 聚灿光电科技(苏州)有限公司 | 大功率cob封装led结构及其晶圆级制造工艺 |
JP6124584B2 (ja) * | 2012-12-21 | 2017-05-10 | 株式会社半導体エネルギー研究所 | 発光装置及びその製造方法 |
CN103107250B (zh) * | 2013-02-05 | 2016-01-13 | 中国科学院半导体研究所 | 晶圆级发光二极管阵列结构的制备方法 |
KR20160016361A (ko) * | 2014-08-05 | 2016-02-15 | 서울바이오시스 주식회사 | 발광 다이오드 및 그 제조 방법 |
CN113991003A (zh) * | 2015-12-01 | 2022-01-28 | 夏普株式会社 | 图像形成元件及其制造方法 |
CN105489725B (zh) * | 2016-01-25 | 2018-10-16 | 厦门市三安光电科技有限公司 | 一种led芯片结构及制作方法 |
TWI668864B (zh) * | 2018-08-09 | 2019-08-11 | 江啟文 | 具有電流路徑方向控制的半導體結構 |
CN110797370B (zh) * | 2019-05-06 | 2022-06-24 | 深圳第三代半导体研究院 | 一种集成单元二极管芯片 |
-
2019
- 2019-05-06 CN CN201911252656.1A patent/CN110797370B/zh active Active
- 2019-05-06 CN CN201910372903.5A patent/CN111900183B/zh active Active
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2020
- 2020-05-06 WO PCT/CN2020/088805 patent/WO2020224599A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1877833A (zh) * | 2006-05-19 | 2006-12-13 | 广州南科集成电子有限公司 | U槽led集成芯片及制造方法 |
CN103258836A (zh) * | 2012-02-17 | 2013-08-21 | 华新丽华股份有限公司 | 高压发光二极管芯片及其制造方法 |
CN103390710A (zh) * | 2013-08-08 | 2013-11-13 | 聚灿光电科技(苏州)有限公司 | Led芯片及其制备方法 |
CN106328636A (zh) * | 2016-10-12 | 2017-01-11 | 聚灿光电科技股份有限公司 | 集成式led器件及其制造方法 |
Also Published As
Publication number | Publication date |
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CN110797370B (zh) | 2022-06-24 |
CN111900183A (zh) | 2020-11-06 |
WO2020224599A1 (zh) | 2020-11-12 |
CN110797370A (zh) | 2020-02-14 |
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