CN111900152B - Integrated unit diode chip - Google Patents
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- CN111900152B CN111900152B CN201910372220.XA CN201910372220A CN111900152B CN 111900152 B CN111900152 B CN 111900152B CN 201910372220 A CN201910372220 A CN 201910372220A CN 111900152 B CN111900152 B CN 111900152B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
The invention provides an integrated unit light emitting diode, comprising: the LED comprises a first conductive type electrode, a second conductive type bonding pad and n diode units, wherein the lengths of the n diode units along the Y-axis direction are smaller than the current diffusion length, and n is more than or equal to 2; the n diode cells shown include a hole structure. The invention solves the technical problem that the diode structure in the prior art has great limitation on three important parameters of lumen efficiency, lumen density output and lumen cost, improves the lumen output of chips in unit area and reduces the lumen cost.
Description
Technical Field
The invention relates to the field of semiconductor materials and device processes, in particular to a semiconductor photoelectric device.
Background
In the conventional vertical structure LED chip, current diffusion mainly depends on the n electrode side, and there is an electrode lead type lead or a drill hole type lead, but the overall current diffusion is not uniform, resulting in loss of luminous efficiency, and heat dissipation is also non-uniform, thereby affecting the efficiency and stability of the unit diode chip. Thereby limiting the vertical high power LED chips to provide a higher lumen output per unit area of product. Current spreading non-uniformity, heat spreading non-uniformity and light extraction non-uniformity, which results in significant limitations on three important parameters of lumen efficiency, lumen density output, lumen cost, the vertical LED chip technology currently on the market cannot provide an effective solution.
The first prior art is Proc.of SPIE Vol.10021 100210X-1 2016 conference paper, as shown in FIGS. 1-3, where FIG. 1 is a block diagram of a vertical LED chip, where the p-type electrode is connected to the back electrode (back metal Au), the box at the edge of the black part and the middle 3 finger leads represent the N-type electrode, and are LED out by two large N-pad wires underneath. Therefore, the current diffusion of the whole chip is mainly limited by the n-type metal wire.
Fig. 2 shows a near field analysis of a vertical chip of the prior art and a normalized current profile on the centerline, the chip dimensions being 1.2mm x 1.2mm. As can be seen in the near field diagram, the current distribution of the chip is still quite uneven, the light intensity of the area close to the n electrode wire is quite large, the current density is quite large, and the light intensity of the area far away from the n electrode wire is quite small, and the current density is quite small. Normalized profiles show that the area of smaller current density is less than 70% of the larger area. Therefore, LED light efficiency, heat dissipation and stability at large currents are severely limited.
Disclosure of Invention
The invention provides an integrated unit diode with high lumen efficiency and high lumen density output, which aims to solve the technical problem that three important parameters of the lumen efficiency, lumen density output and lumen cost of a diode structure in the prior art have great limitation.
To achieve the above object, the present invention provides an integrated unit diode chip including: the LED comprises a first conductive type electrode, a second conductive type bonding pad and n diode units, wherein the lengths of the n diode units along the Y-axis direction are smaller than the current diffusion length, and n is more than or equal to 2; the n diode cells shown include a hole structure.
Preferably, the second conductive type electrode is composed of a linear electrode line.
Preferably, the linear strip electrode wires are in linear layout, and part or all of the linear strip electrode wires are in nonlinear layout.
Preferably, the non-linear layout includes a polyline layout, a curvilinear layout.
Preferably, the pore structure comprises 1 to 1000000 pore units, the pore units having a diameter of 0.001 to 20 microns.
Preferably, a mirror is provided between the diode unit and the substrate.
Preferably, the mirror material is silver, aluminum or a distributed bragg mirror.
Preferably, the pore units are symmetrically arranged, asymmetrically arranged, periodically arranged, aperiodically arranged or randomly arranged.
Preferably, each diode unit contains 1 to 1000000 hole units, and the hole units are triangular, square, rectangular, pentagonal, hexagonal, circular and any other defined shapes.
Preferably, the diode units are connected in parallel, in series or in series-parallel with a set proportion.
Preferably, the diode unit has the following shape: triangle, square, rectangle, pentagon, hexagon, circle, any custom shape.
Preferably, the number of the diode units is 2-1000 hundred million.
Preferably, the length of the diode unit along the Y-axis direction is 0.001-200 micrometers.
Preferably, the diode units are uniformly and symmetrically arranged and distributed.
Preferably, the diode units are arranged in unequal sizes and uneven distribution.
Preferably, the linear bar electrode wire is made of linear metal and/or indium tin oxide material; the linear metal material is aluminum, silver, titanium, nickel, gold, platinum, chromium or an alloy of any two or more of the above metals.
Preferably, the integrated unit diode chip includes: the semiconductor device comprises a back electrode, a substrate, a protective metal layer, a reflecting mirror, a first conductive type layer, a quantum well active region and a second conductive type layer.
Preferably, the back electrode material is aluminum, silver, titanium, nickel, gold, platinum, chromium, tin, or an alloy of any two or more of the above metals.
Preferably, the material of the protective metal layer is aluminum, silver, titanium, nickel, gold, platinum, chromium, tin, tungsten, or an alloy of any two or more of the above metals.
Preferably, the reflector material is silver, aluminum, or a distributed Bragg reflector.
Preferably, the light wave emitted by the integrated unit diode chip is UVC, UVB, UVA, purple light, blue light, green light, yellow light, red light or infrared light.
Preferably, the luminescent material is Al when the luminous light wave of the integrated unit diode chip is UVC, UVB, UVA, purple light, blue light, green light, yellow light or red light x1 In y1 Ga z1 N,1 is more than or equal to x1, y1, and z1 is more than or equal to 0; the substrate is a planar substrate or a patterned substrate; the substrate material is sapphire, silicon carbide, gallium nitride, aluminum nitride, gallium oxide or silicon.
Preferably, the luminescent material is Al when the luminous light wave of the unit diode chip is yellow light, red light or infrared light x2 In y2 Ga z2 P，1≥x2,y2,z2≥0，Al x3 In y3 Ga z3 As，1≥x3,y3,z3≥0,Al x4 In y4 Ga z4 As u P v 1 is more than or equal to x4, y4, z4, u, v is more than or equal to 0; the substrate is a planar substrate or a patterned substrate, and the substrate material is indium phosphide, gallium arsenide, sapphire or silicon.
Preferably, the integrated unit diode die size is 0.1 microns by 0.1 microns to 100000 microns by 100000 microns.
Preferably, the power of the integrated unit diode chip is 0.0001W to 1000W.
The integrated unit diode chip adopted by the invention breaks through the limitation of the conventional vertical LED technology in the three aspects of light, electricity and heat through the nano-micron size structure effect. The size design of the unit diode chip is controlled within the current diffusion length, and the geometric optimization design mode of higher freedom degree can simultaneously solve the problem of uneven current diffusion of an n-electrode and a p-electrode which puzzles the design of the LED unit diode chip, so that higher photoelectric conversion efficiency/lumen efficiency is obtained; the nano microstructure of each diode unit and the hole structure in the mesa can increase the effective light emitting area, thereby improving the light extraction efficiency; the reduction of the size of the integrated unit diode chip and the hole structure in the table top bring about larger heat dissipation area, have better heat dissipation performance, and can allow the injection of ultra-large current density without affecting the stability of the integrated unit diode chip, thereby greatly improving the lumen output of the integrated unit diode chip in unit area and reducing the lumen cost.
Drawings
Fig. 1 is a block diagram of a diode cell of the prior art.
Fig. 2 is a block diagram of a diode cell of the prior art.
Fig. 3 is a top view of an integrated unit diode chip provided in embodiment 1 of the present invention.
Fig. 4 is a top view of an integrated unit diode chip provided in embodiment 2 of the present invention.
Fig. 5 is a schematic diagram of an integrated unit diode chip according to embodiment 1-2 of the present invention.
The semiconductor device comprises a second conductive type electrode 1, a second conductive type layer 2, a quantum well active region 3, a first conductive type layer 4, a reflecting mirror 5, a protective metal layer 6, a substrate 7, a back electrode 8, a second conductive type bonding pad 9, a diode unit 10 and a hole structure 11.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is evident that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In view of the great limitations of three important parameters of the existing diode structure, namely lumen efficiency, lumen density output and lumen cost, the embodiment of the invention provides an integrated unit diode with high lumen efficiency and large lumen density output, and the invention is described in detail below with reference to the accompanying drawings.
The invention provides an integrated unit diode chip, comprising:
the LED comprises a first conductive type electrode, a second conductive type bonding pad and n diode units, wherein the lengths of the n diode units along the Y-axis direction are smaller than the current diffusion length, and n is more than or equal to 2; the n diode cells shown include a hole structure.
Preferably, the second conductive type electrode is composed of a linear electrode line.
Preferably, the linear electrode wire is in a linear layout, and part or all of the design is in a non-linear layout, wherein the non-linear layout comprises a broken line layout and a curve layout, the width of the linear electrode wire is 0.001-20 micrometers, the thickness of the linear electrode wire is 0.001-10 micrometers, and a linear metal and/or indium tin oxide material is adopted, wherein the linear metal material is aluminum, silver, titanium, nickel, gold, platinum, chromium or an alloy of any two or more metals.
The n diode cell structures comprise a pore structure, the pore structure comprises 1-1000000 pore cells, the diameters of the pore cells are 0.001-20 microns, the pore cells are symmetrically arranged, asymmetrically arranged, periodically arranged, aperiodically arranged or randomly arranged, each diode cell contains 1-1000000 pore cells, and the pore cells are triangular, square, rectangular, pentagonal, hexagonal, circular and any other defined shape.
A reflecting mirror is arranged between the diode unit and the substrate, and the reflecting mirror material is silver, aluminum or a distributed Bragg reflecting mirror. The diode units are connected in parallel, and the shapes of the diode units are as follows: triangle, square, rectangle, pentagon, hexagon, circle, any custom shape. The number of the diode units is 2-1000 hundred million. The diode unit has a length of 0.001-200 microns along the Y-axis direction. The diode units are uniformly and symmetrically arranged and distributed. The diode units are arranged in unequal sizes and uneven distribution.
The integrated unit diode chip further includes: the semiconductor device comprises a back electrode, a substrate, a protective metal layer, a reflecting mirror, a first conductive type layer, a quantum well active region and a second conductive type layer. The back electrode material is aluminum, silver, titanium, nickel, gold, platinum, chromium, tin, or an alloy of any two or more of the above metals. The material of the protective metal layer is aluminum, silver, titanium, nickel, gold, platinum, chromium, tin, tungsten or an alloy of any two or more of the above metals. The reflector material is silver, aluminum or a distributed Bragg reflector.
The luminous light wave of the integrated unit diode chip is UVC, UVB, UVA, purple light, blue light, green light, yellow light, red light or infrared light, and when the luminous light wave is UVC, UVB, UVA, purple light, blue light, green light, yellow light or red light, the luminous material is Al x1 In y1 Ga z1 N,1 is more than or equal to x1, y1, and z1 is more than or equal to 0; the substrate being a planar substrateA substrate, or a patterned substrate; the substrate material is sapphire, silicon carbide, gallium nitride, aluminum nitride, gallium oxide or silicon. When the sheet luminescence light wave is yellow light, red light and infrared light, the luminescent material is Al x2 In y2 Ga z2 P，1≥x2,y2,z2≥0，Al x3 In y3 Ga z3 As，1≥x3,y3,z3≥0,Al x4 In y4 Ga z4 As u P v 1 is more than or equal to x4, y4, z4, u, v is more than or equal to 0; the substrate is a planar substrate or a patterned substrate, and the substrate material is indium phosphide, gallium arsenide, sapphire or silicon.
The integrated unit diode die size is 0.1 micron by 0.1 micron to 100000 micron by 100000 micron. The power of the integrated unit diode chip is 0.0001W-1000W.
Example 1
The present embodiment provides an integrated unit diode chip, as shown in fig. 3, including: a second conductivity type electrode 1, a second conductivity type pad 9, and a diode cell 10. Wherein the second conductivity type electrode 1 is an n-type electrode and the second conductivity type pad 9 is an n-type pad.
The diode units are rectangular with the same size, and the lengths of the diode units which are uniformly distributed in 7 rows of 7 parts and the like along the longitudinal direction of the Y axis are 80 micrometers and less than the current diffusion length. The diode units are connected in parallel. Each diode cell is additionally provided with a hole structure 11, and total of 81 circular hole cells are arranged. Wherein 4 diode units near the long side are provided with 12 hole units, 3 diode units in the middle are provided with 11 hole units, and the diameter of each hole unit is 1 nm-20 microns. The hole units are symmetrically arranged. The arrangement of the hole units may be asymmetric, periodic, aperiodic or random, and the shape of the hole units may be triangular, square, rectangular, pentagonal, hexagonal, circular, or any other arbitrary defined shape, and is not limited to the arrangement and shape shown in fig. 3. The n-type electrode is a linear electrode wire, the linear layout is adopted, the width of the electrode wire is 0.001-10 microns, the thickness of the electrode wire is 0.001-20 microns, and the electrode wire material is aluminum or silver or alloy of the two metals.
In some preferred embodiments, the diode unit has a length of 100 microns in the longitudinal direction of the Y-axis; in other preferred embodiments, the diode unit has a length of 10 microns in the longitudinal direction of the Y-axis; in other preferred embodiments, the diode unit has a length of 1 micron in the longitudinal direction of the Y-axis.
As shown in fig. 5, an integrated unit diode chip further includes a second conductivity type layer 2, a quantum well active region 3, a first conductivity type layer 4, a mirror 5, a protective metal layer 6, a substrate 7, and a back electrode 8. Wherein the second conductivity type layer 2 is an n-GaN layer and the first conductivity type layer 4 is a-GaN layer. The back electrode material is aluminum, silver, titanium, nickel, gold, platinum, chromium, tin, or an alloy of any two or more of the above metals. The material of the protective metal layer is aluminum, silver, titanium, nickel, gold, platinum, chromium, tin, tungsten or an alloy of any two or more of the above metals. The reflector material is silver, aluminum or a distributed Bragg reflector. When the luminous light waves of the integrated unit diode chip are UVC, UVB, UVA, purple light, blue light, green light, yellow light and red light: the material of the unit diode chip is Al x1 In y1 Ga z1 N,1 is more than or equal to x1, y1, z1 is more than or equal to 0, the substrate is a planar substrate, and the substrate material is sapphire. When the luminous light waves of the integrated unit diode chip are yellow light, red light and infrared light, the material of the unit diode chip is Al x2 In y2 Ga z2 P，1≥x2,y2,z2≥0，Al x3 In y3 Ga z3 As，1≥x3,y3,z3≥0,Al x4 In y4 Ga z4 As u P v 1 is more than or equal to x4, y4, z4, u, v is more than or equal to 0; the substrate is a planar substrate, and the substrate material is indium phosphide.
Because the current diffusion length of the diode chip is inversely proportional to the square root of the current density, under the injection of large current, the current diffusion length is shorter, so that the current diffusion of the chip is more uneven, the efficiency is lower, and the heat dissipation is more difficult. By adopting the structure design of the integrated unit light-emitting diode, the size and shape of the diode can be flexibly changed, the optimal current diffusion and heat dissipation performance under the specified working current can be obtained, and the injection current density of the chip can be greatly improved, so that the lumen output of a unit area is improved.
Example 2
The present embodiment provides an integrated unit diode chip, as shown in fig. 4, including: a second conductivity type electrode 1, a second conductivity type pad 9, and a diode cell 10. Wherein the second conductive type electrode 1 is an n-type electrode, which is composed of a linear electrode line, and the second conductive type pad 9 is an n-type pad.
The diode units are square with the same size, are uniformly distributed in 7 rows and 16 columns with 106 equal distribution, and have the length of 40 micrometers along the Y-axis direction. The diode units are arranged in a rectangular shape, the length along the Y-axis direction is smaller than the current diffusion length, and the diode units are connected in parallel. Each diode cell is additionally provided with a hole structure 11, and 212 circular hole cells are added. Wherein each diode cell comprises 2 hole cells with a diameter of 1nm to 20 microns. The hole units are symmetrically arranged. The arrangement of the hole units may be asymmetric, periodic, aperiodic or random, and the shape of the hole units may be triangle, square, rectangle, pentagon, hexagon, circle, and any other arbitrary defined shape, and is not limited to the arrangement and shape shown in fig. 4. The n-type electrode is a linear electrode wire, the linear layout is adopted, the width of the electrode wire is 0.001-10 microns, the thickness of the electrode wire is 0.001-10 microns, and the electrode wire material is aluminum, silver, titanium, nickel, gold, platinum and chromium or an alloy of any two or more metals.
In some preferred embodiments, the diode cell has a diameter of 10 nanometers; in other preferred embodiments, the diode cell diameter is 100 nanometers.
As shown in fig. 5, an integrated unit diode chip further includes a second conductivity type layer 2, a quantum well active region 3, a first conductivity type layer 4, a mirror 5, a protective metal layer 6, a substrate 7, and a back electrode 8. Wherein the second conductivity type layer 2 is an n-GaN layer and the first conductivity type layer 4 is a p-GaN layer. The back electrode material is aluminum, silver, titanium, nickel, gold, platinum, chromium, tin, or an alloy of any two or more of the above metals. The protective metal layer is made of aluminum, silver, titanium, nickel, gold, platinum, chromium, tin, tungsten, or any two of the above materialsAn alloy of the above metals. The reflector material is silver, aluminum or a distributed Bragg reflector. When the luminous light waves of the integrated unit diode chip are UVC, UVB, UVA, purple light, blue light, green light, yellow light and red light: the material of the unit diode chip is Al x1 In y1 Ga z1 N,1 is more than or equal to x1, y1, z1 is more than or equal to 0, the substrate is a planar substrate, and the substrate material is sapphire. When the luminous light waves of the integrated unit diode chip are yellow light, red light and infrared light, the material of the unit diode chip is Al x2 In y2 Ga z2 P，1≥x2,y2,z2≥0，Al x3 In y3 Ga z3 As，1≥x3,y3,z3≥0,Al x4 In y4 Ga z4 As u P v 1 is more than or equal to x4, y4, z4, u, v is more than or equal to 0; the substrate is a planar substrate, and the substrate material is indium phosphide.
Because the current diffusion length of the diode chip is inversely proportional to the square root of the current density, under the injection of large current, the current diffusion length is shorter, so that the current diffusion of the chip is more uneven, the efficiency is lower, and the heat dissipation is more difficult. By adopting the structure design of the integrated unit light-emitting diode, the size and shape of the diode can be flexibly changed, the optimal current diffusion and heat dissipation performance under the specified working current can be obtained, and the injection current density of the chip can be greatly improved, so that the lumen output of a unit area is improved.
The integrated unit light-emitting diode provided by the embodiment of the invention has the following beneficial effects:
(1) The length design of the diode unit is controlled within the current diffusion length, the optimized geometric design with a certain degree of freedom can further improve the light-emitting efficiency, and the problem of uneven current diffusion of an n-type electrode and a p-type electrode which plague the design of the diode chip of the LED unit can be solved at the same time, so that higher photoelectric conversion efficiency/lumen efficiency is obtained.
(2) The design of the integrated unit diode chip can realize ultra-uniform current injection, so that higher efficiency, better wavelength uniformity, narrower half-width of a luminescence spectrum, better heat dissipation uniformity and better device stability are obtained.
(3) The integrated unit diode chip is suitable for the LED products of various colors such as UVC, UVA, UVB, purple light, blue light, green light, yellow light, red light, infrared light and the like, and can be used in the application fields of LED illumination, backlight, display, plant illumination, medical treatment and other semiconductor light-emitting devices.
The foregoing embodiments have been provided for the purpose of illustrating the general principles of the present invention in further detail, and are not to be construed as limiting the scope of the invention, as any modification, equivalent replacement, improvement, etc. that comes within the spirit and principles of the present invention are intended to be included in the scope of the present invention.
Claims (21)
1. An integrated unit diode chip, comprising:
the semiconductor device comprises a back electrode, a substrate, a protective metal layer, a reflecting mirror, a first conductive type layer, a quantum well active region, a second conductive type layer, a first conductive type electrode, a second conductive type bonding pad and n diode units, wherein the length of the n diode units along the Y-axis direction is smaller than the current diffusion length, and n is more than or equal to 2; the n diode cells shown include a hole structure; the second conductive type electrode is composed of a linear electrode wire; the linear electrode wires are in linear layout, and part or all of the linear electrode wires are in nonlinear layout; a mirror is provided between the diode cell and the substrate.
2. The integrated unit diode chip of claim 1, wherein the non-linear layout comprises a polyline layout, a curvilinear layout.
3. The integrated unit diode chip of claim 1, wherein the pore structure comprises 1 to 1000000 pore units having a diameter of 0.001 microns to 20 microns.
4. An integrated unit diode chip as claimed in claim 1, characterized in that the mirror material is silver, aluminum or distributed bragg mirror.
5. An integrated unit diode chip as claimed in claim 1 or 3, characterized in that the hole units are arranged symmetrically, asymmetrically, periodically, aperiodically or randomly.
6. An integrated unit diode chip as claimed in claim 3, characterized in that each diode cell contains 1 to 1000000 hole cells, the hole cells being triangular, square, rectangular, pentagonal, hexagonal, circular, and any other defined shape.
7. An integrated unit diode chip as claimed in claim 1, wherein the diode units are connected in parallel, in series or in a mixed series-parallel arrangement of a set ratio.
8. The integrated unit diode chip of claim 1, wherein the diode cell shape is: triangle, square, rectangle, pentagon, hexagon, circle, any custom shape.
9. An integrated unit diode chip as claimed in claim 1 or 8, wherein the number of diode units is between 2 and 1000 hundred million.
10. An integrated unit diode chip as claimed in claim 1 or 8, wherein the diode cells have a length in the Y-axis direction of 0.001 to 100 microns.
11. An integrated unit diode chip as claimed in claim 1 or 9, wherein the diode cells are distributed in a uniform symmetrical arrangement.
12. An integrated unit diode chip as claimed in claim 1 or 9, wherein the diode cells are of unequal size and unevenly distributed.
13. An integrated unit diode chip as claimed in claim 1, characterized in that the line-shaped electrode lines are made of line-shaped metal and/or indium tin oxide material; the linear metal material is aluminum, silver, titanium, nickel, gold, platinum, chromium or an alloy of any two or more of the above metals.
14. An integrated unit diode chip as claimed in claim 1, wherein the back electrode material is aluminium, silver, titanium, nickel, gold, platinum, chromium, tin, or an alloy of any two or more of the above metals.
15. An integrated unit diode chip as claimed in claim 1, wherein the protective metal layer material is aluminum, silver, titanium, nickel, gold, platinum, chromium, tin, tungsten, or an alloy of any two or more of the foregoing metals.
16. An integrated unit diode chip as claimed in claim 1, characterized in that the mirror material is silver, aluminum, distributed bragg mirror.
17. The integrated unit diode chip of claim 1, wherein the integrated unit diode chip emits light in the form of UVC, UVB, UVA, violet, blue, green, yellow, red or infrared light.
18. An integrated unit diode chip as claimed in claim 1, wherein the integrated unit diode chip emits light with a wavelength of UVC, UVB, UVA, violet, blue, green, yellow or red light and the luminescent material is Al x1 In y1 Ga z1 N,1 is more than or equal to x1, y1, and z1 is more than or equal to 0; the substrate is a planar substrate, or a patterned substrateA bottom; the substrate material is sapphire, silicon carbide, gallium nitride, aluminum nitride, gallium oxide or silicon.
19. An integrated unit diode chip as claimed in claim 1, wherein the unit diode chip emits light in the form of yellow, red, or infrared light when the luminescent material is Al x2 In y2 Ga z2 P，1≥x2,y2,z2≥0，Al x3 In y3 Ga z3 As，1≥x3,y3,z3≥0,Al x4 In y4 Ga z4 As u P v 1 is more than or equal to x4, y4, z4, u, v is more than or equal to 0; the substrate is a planar substrate or a patterned substrate, and the substrate material is indium phosphide, gallium arsenide, sapphire or silicon.
20. The integrated unit diode chip of claim 1, wherein the integrated unit diode chip size is 0.1 microns x 0.1 microns to 100000 microns x 100000 microns.
21. The integrated unit diode chip of claim 1, wherein the integrated unit diode chip has a power of 0.0001W to 1000W.
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| CN201910372220.XA CN111900152B (en) | 2019-05-06 | 2019-05-06 | Integrated unit diode chip |
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| CN201910372220.XA CN111900152B (en) | 2019-05-06 | 2019-05-06 | Integrated unit diode chip |
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| CN111900152B true CN111900152B (en) | 2023-07-28 |
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| CN102709432A (en) * | 2012-05-10 | 2012-10-03 | 施科特光电材料(昆山)有限公司 | Network-shaped electrode applicable to high-power GaN-based LED chips |
| CN103022070B (en) * | 2012-11-22 | 2016-01-20 | 华南理工大学 | A kind of large scale LED chip with novel light-emitting cellular construction |
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