CN1133217C - Surficial luminous semiconductor device and method for increasing transverse current - Google Patents
Surficial luminous semiconductor device and method for increasing transverse current Download PDFInfo
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- CN1133217C CN1133217C CN00120889A CN00120889A CN1133217C CN 1133217 C CN1133217 C CN 1133217C CN 00120889 A CN00120889 A CN 00120889A CN 00120889 A CN00120889 A CN 00120889A CN 1133217 C CN1133217 C CN 1133217C
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Abstract
The present invention relates to a surficial luminous semiconductor device and a method for increasing transverse current. The surficial luminous semiconductor device comprises a two-dimensional electron gas (two-dimensional cavity gas) and an electrode, wherein the two-dimensional electron gas (two-dimensional cavity gas) is arranged in the n area (or the p area) of the surficial luminous semiconductor device and is used for enhancing the migration rate of electrons parallel to a p-n junction plane surface; the electrode forms a latticed shape, is arranged on a light output surface and is used for enhancing light transmission. The surficial luminous semiconductor device with a new structure, such as a luminous diode, a surface output laser diode, etc., has high light output efficiency and uniform luminescence on the whole luminous surface and avoids a metal transparent electrode with the extreme requirement of thickness, or decreases the thickness of the device; therefore, the surficial luminous semiconductor device with a new structure has the advantage of low manufacturing cost.
Description
Technical field
The present invention relates to semiconductor device, be meant a kind of semiconductor surface luminescent device and manufacture method thereof especially.
Background technology
The semiconductor surface luminescent device relates to following content: then comprise light-emitting semiconductor devices such as light-emitting diode and surface-emission laser diode by the device function division; Divide then comprise with the GaAs being the III family arsenide surface light-emitting device of representative by material, with indium phosphide (InGaP, gallium phosphide) for the III family phosphide surface light-emitting device of representative, with the gallium nitride is the III group-III nitride surface light-emitting device of representative, and changing zinc with sulphur (selenium) is II-VI compounds of group surface light-emitting device of representative or the like.
Light-emitting diode is at demonstration, control, the great element of communication field consumption.Because the life-span of light-emitting diode is long, power consumption is low, shows that at instrument and meter the field has almost completely replaced traditional demonstration bulb at present.Along with the appearance of red, green, blue high brightness and superhigh brightness LED, satisfy current needs to the outdoor demonstration of full color, present most of large-screen outdoor display screen is all made with light-emitting diode.High brightness red, yellow, green (or blue) light-emitting diode is compared with traditional incandescent lamp as being applied to the traffic signals sign, and electric energy can save 70～80% under same luminous intensity, long 40～50 times of life-span.High-light long-life light-emitting diode traffic lights, electric energy and maintenance cost reduce greatly.Semiconductor laser diode is an optical disc storage, the indispensable opto-electronic device in fields such as communication, and market prospects are wide, are the focuses of studying in the world at present.
Conventional light-emitting diode or laser diode structure comprise a p district (wherein containing one or more layers p N-type semiconductor N material) and a n district (wherein containing one or more layers n N-type semiconductor N material) substantially, and the p-n junction of being made up of p district and n district intersection.The light that light emitting semiconductor device sent produces from p-n junction.In addition, in order to switch on to device, in the device in p district and the n district outside p electrode and n electrode are arranged respectively respectively, they generally are to make with metal material that usually can not printing opacity.Conventional light-emitting diode or laser diode device tube core lateral dimension are taken advantage of the hundreds of micron dimension for the hundreds of micron, and the thickness of p district wherein and n district one of (perhaps both) has only 1 micron, even less than 1 micron.For convenience, we are defined as lateral dimension " thin district " much larger than the zone (no matter being p district or n district) of gauge, and lateral dimension and gauge is approaching even be defined as " thick district " greater than the zone (no matter being p district or n district) of gauge.Because the physical dimension in thin district, make in the thin district lateral resistance much larger than longitudinal electrical resistance, the electric current in the thin district can only vertically flow and almost can not lateral flow, and promptly can only almost can not to be parallel to p-n junction perpendicular to p-n junction flows mobile for electric current.Electric current can not be extending transversely in thin district, and the electrode scope in thin district has determined the scope of electric current in the thin district.Because the characteristic in thin district, make to have following shortcoming in the semiconductor surface luminescent device that contains thin district: because current unevenness is even in the device, so the device non-uniform light, efficient lighting area reduces (1); (2) p-n junction of thin region electrode orthographic projection place zone is luminous the strongest, but this place just in time blocked by thin region electrode, and the light that device sent can not appear effectively.In order to address these problems, generally adopt following three kinds of methods: (1) will approach region electrode and cover whole thin district, utilize metal to have these characteristics of good electrical conductivity, and electric current is spread laterally to whole thin district.Though this method has solved electric current problem extending transversely, luminous even in the device, the light that device sent is still blocked by electrode, can not appear effectively.(2) thickness that will approach the district is thickeied, and becomes thick district.This method has increased the thickness of material, brings the growth time of material to prolong thus, has increased the cost of manufacture of device.(3) " transparent " metal electrode of employing very narrow thickness.Metal generally is opaque, but reduced thickness also has certain light transmission after to a certain degree.Guaranteeing under the electric current prerequisite extending transversely that the metal electrode that as far as possible will approach the district is thinned to " transparent " state and should covers whole thin district by " transparent " electrode.This is the present iii-nitride light emitting devices method of extensive employing.Though solved the contradiction of lateral current and printing opacity on this methodological principle, the complex manufacturing technology to the extremely strict transparent metal electrode of thickness requirement has increased device cost.
Summary of the invention
The manufacture method that the purpose of this invention is to provide a kind of semiconductor surface luminescent device had both solved the contradiction between the light transmission of lateral current and luminescent device in the thin district, avoided complex manufacturing technology again, the problem that cost of manufacture is high.
In order to realize purpose of the present invention, this method comprises following two aspects:
1. contain continuous growth in the thin district of device and distinguish homotype (n type or p type) but two kinds of different semi-conducting materials of energy gap with thin.The one deck that forms at the interface at these two kinds of materials has the two-dimensional structure that strengthens lateral current.In the thin district of device, can contain one deck two-dimensional structure or multilayer two-dimension structure.
2. the cancellated metal electrode that adopts similar warp and parallel etc. to be interweaved at the transparent surface of device, and have therein can be for the metal pad of device electrode lead-in wire.
For meaning of the present invention is described better, below above mentioned vocabulary is further explained.
Said " surface light-emitting device " refers to the luminescent device that only sends from the plane that is parallel to p-n junction that device sends.Then comprise light-emitting semiconductor devices such as light-emitting diode and surface-emission laser diode by the device function division; Material by fabricate devices divides then comprise with the GaAs being the III family arsenide surface light-emitting device of representative, with indium phosphide (InGaP, gallium phosphide) for the III family phosphide surface light-emitting device of representative, with the gallium nitride is the III group-III nitride surface light-emitting device of representative, changing zinc with sulphur (selenium) is the II-VI compounds of group surface light-emitting device of representative, or the like; Dividing by the light wavelength that device sends, can be visible light, infrared light and ultraviolet light etc.
Said " III family arsenide " comprises GaAs, aluminum gallium arsenide, InGaAsP, indium arsenide gallium aluminium.
Said " III family phosphide " comprises gallium phosphide, phosphatization gallium aluminium, InGaP, indium phosphide gallium aluminium.
Said " III group-III nitride " comprises gallium nitride, aluminium gallium nitride alloy, InGaN, indium nitride gallium aluminium.
Said " II-VI compounds of group " comprises zinc sulphide, zinc selenide, and zinc sulfur selenide, etc.
Said " thin district " can be the p district of device, also can be the n district of device.Refer in the device lateral dimension much larger than the zone of gauge.
Said " with thin district homotype " implication is as follows: if thin district is the n district of device, two kinds of semi-conducting materials that the energy gap of then growing continuously is different also are the n type; If thin district is the p district of device, two kinds of semi-conducting materials that the energy gap of then growing continuously is different also are the p type.
Said " two kinds of semi-conducting materials that energy gap is different " refer in these two kinds of semi-conducting materials the energy difference difference between the energy at the bottom of the conduction band and the energy of top of valence band; Promptly in these two kinds of semi-conducting materials, between the energy at the bottom of the conduction band or (and) energy jump is arranged between the energy of top of valence band.
Said " growth continuously " refer to two kinds of different semi-conducting materials of energy gap and be stacked in tight adjacent, but order can be put upside down.For example: A represents the big semi-conducting material of energy gap, and B represents the little semi-conducting material of energy gap, so A, B both must be adjacent, but can be AB order, also can be the BA order, promptly can the more close p-n junction of A, also can the more close p-n junction of B.
Said " transverse current " refers to the electric current that is parallel to the device p-n junction.
Said " longitudinal current " refers to the electric current perpendicular to the device p-n junction.
Said " two-dimensional structure " can be two-dimensional electron gas, also can be two-dimensional hole gas, still is that device p district decides according to thin district for device n district.If thin district is device n district, then " two-dimensional structure " is two-dimensional electron gas; If thin district is device p district, then " two-dimensional structure " is two-dimensional hole gas.
Said " one deck two-dimensional structure " and " multilayer two-dimension structure " implication are as follows: represent the big semi-conducting material of energy gap with A, B represents the little semi-conducting material of energy gap, has formed " one deck two-dimensional structure " by the interface of AB so; If contain A-B-A-B... in the device, just formed one deck two-dimensional structure (as: three layers of two-dimensional structure are arranged among the A-B-A-B) by each AB interface so, so just claim " multilayer two-dimension structure ".
Said " cancellated metal electrode " refers to metal electrode and is not paved with whole plane, but has many cavities in the plane." network structure " can be rectangular configuration (similar warp and parallel), also can be hexagonal structure (similar honeycomb), and other can be paved with the structure on plane arbitrarily.
Said " two-dimensional structure " and " cancellated metal electrode " can use separately in a device, also can unite use in a device.
Because in device architecture of the present invention, thin district has introduced two-dimensional structure at device, and two-dimensional structure has the effect that strengthens lateral current and do not strengthen (even weakening) longitudinal current, has strengthened the extending transversely degree of electric current in the thin district of device greatly.
Because thin district has introduced the mesh electrode structure at device, this network structure is slit into many fritters to the thin differentiation of device.At each fritter, the horizontal physical dimension in thin district is dwindled greatly, and the thickness in thin district does not change.Because lateral dimension dwindles, electric current strengthens greatly in the degree extending transversely in the thin district of device.
Compare with technology in the past, this invention has following meaning:
1, in gallium nitride (blue and green) light-emitting diode preparation before, extending transversely in Bao Qu (p district) in order to make electric current, adopt " transparent " metal electrode usually.And this electrode pair thickness requirement is very strict, and electrode is too thick then opaque, and electrode is too thin then discontinuous, and electric current can not be expanded.Strict thickness requirement certainly will increase device cost, reduces the rate of finished products of device.In addition, the metal pad of " transparent " metal electrode and contact conductor can not must adopt two procedures with the one procedure preparation.By contrast, the present invention adopts the undemanding mesh electrode of thickness requirement, and the metal pad of mesh electrode and contact conductor prepares in one procedure.Improve the rate of finished products of device so greatly, reduced device cost.
2, in the past InGaP (red and orange etc.) light-emitting diode preparation, extending transversely in Bao Qu (p district) in order to make electric current, usually the thickness of the superiors' material (p type gallium phosphide) is thickeied, reach more than 4 microns.Because the gross thickness of device increases, the consumption of raw materials of growth of device increases, and the growth time of device preparation prolongs, and these have all increased device cost.By contrast, this aspect adopts the undemanding mesh electrode of thickness requirement, and this network structure is slit into many fritters to the thin differentiation of device.At each fritter, the horizontal physical dimension in thin district is dwindled greatly, and the thickness in thin district does not change.Because lateral dimension dwindles, electric current strengthens greatly in the degree extending transversely in the thin district of device.Because the metal pad of mesh electrode and contact conductor prepares in one procedure, mesh electrode itself can not increase the technology cost of device.
Technical scheme of the present invention is:
A kind of semiconductor surface luminescent device strengthens the method for lateral current, it is characterized in that this method comprises the steps:
1) grow successively on Sapphire Substrate 1～10 micron n type gallium nitride, active area, 0.1～1 micron p type aluminium gallium nitride alloy, 0.1～1 micron p type gallium nitride forms the epitaxial material of device;
2) adopt conventional photoetching process, etching technics device technology,, expose n type gallium nitride the part surface etching of epitaxial material;
3) adopt conventional evaporation of metal device technology, on p type gallium nitride layer, form the p-electrode, on n type gallium nitride layer, form the n-electrode;
4) device is cut into fritter, the lateral dimension of device is not less than 100 microns, is device package at last;
5) the cancellated p-electrode that adopts similar warp and parallel to be interweaved at the transparent surface of device, and have therein can be for the metal pad of device electrode lead-in wire;
6) contain one or more layers in the thin district of device and have two-dimensional electron gas or the two-dimensional hole gas that strengthens lateral current.
Wherein the said p-electrode of step 3) is latticed metal electrode, at one jiao of metal pad that is manufactured with a contact conductor of latticed metal electrode.
A kind of semiconductor surface luminescent device of the present invention, it is characterized in that, wherein grow successively on Sapphire Substrate 1～10 micron n type gallium nitride, active area, 0.1～1 micron p type aluminium gallium nitride alloy, 0.1～1 micron p type gallium nitride forms the epitaxial material of device; With the part surface etching of epitaxial material, expose n type gallium nitride; On p type gallium nitride layer, form the p-electrode, on n type gallium nitride layer, form the n-electrode; The cancellated p-electrode that adopts similar warp and parallel to be interweaved at the transparent surface of device, and have therein can be for the metal pad of device electrode lead-in wire; Contain one or more layers in the thin district of device and have two-dimensional electron gas or the two-dimensional hole gas that strengthens lateral current.
Wherein the p-electrode is latticed metal electrode, at one jiao of metal pad that is manufactured with a contact conductor of latticed metal electrode.
The semiconductor layer in said n type district or p type district can be two layers or more; Every layer thickness is 1nm～100 μ m; Semiconductor layer can be mixed with impurity or not be mixed with impurity.
One or more layers two-dimensional electron gas can be contained in the district in the n type, or one or more layers two-dimensional hole gas can be contained in p type district.
Mesh electrode in n type district, electrode are usually by the alloy of nickel, aluminium, titanium, zinc, tin and indium single-layer metal material or above-mentioned metal material; The mesh electrode in p type district, electrode are usually by the alloy composition of gold, platinum, tungsten, cobalt single-layer metal material or above-mentioned metal material.
In a device, two-dimensional structure and mesh electrode can use separately, also can unite use.
Description of drawings
In order to further specify feature of the present invention and effect, the present invention is further illustrated below in conjunction with drawings and Examples, wherein:
Fig. 1 represents the profile according to the LED device of first embodiment of the invention.
Fig. 2 represents the vertical view according to the LED device of first embodiment of the invention.
Fig. 3 represents the profile according to the LED device of second embodiment of the invention.
Fig. 4 represents the vertical view according to the LED device of second embodiment of the invention.
Fig. 5 represents the profile according to the LED device of third embodiment of the invention.
Fig. 6 represents the vertical view according to the LED device of third embodiment of the invention.
Embodiment
Embodiment one:
Fig. 1 and Fig. 2 are respectively the device profile map and the vertical views of the light-emitting diode of first embodiment, and this is the structure chart of a gallium nitride blue light or green light LED.This preparation of devices comprises following process:
1, consults Fig. 1, at Sapphire Substrate (Al
2O
3) 1～10 micron the n type gallium nitride (GaN) 6 of growing successively on 7, (generally be InGaN, InGaN) the p type gallium nitride 2 of 4,0.1～1 micron of 5,0.1～1 micron p type aluminium gallium nitride alloy (AlGaN) etc. forms the epitaxial material of device to active area.
2, consult Fig. 1, adopt device technologies such as conventional photoetching process, etching technics,, expose n type gallium nitride 6 the part surface etching of epitaxial material.
3, consult Fig. 2, adopt conventional device technologies such as evaporation of metal, on p type gallium nitride layer, form p-electrode 1, wherein contain the metal pad 1 (a) of latticed metal electrode 1 (b) and contact conductor, on n type gallium nitride layer, form n-electrode 8.
4, device is cut into fritter.The lateral dimension of device (long and wide) is not less than 100 microns.Be device package at last.
In this device, have two places to use the present invention:
1, because the lateral dimension of device is not less than 100 microns, and the longitudinal size in p district is at 0.1～2 micron, so the p district is the thin district of this device.Contain the different p type aluminium gallium nitride alloy 4 of continuous growth energy gap and 2 two kinds of semi-conducting materials of p type gallium nitride in the p district, formed one deck two-dimensional hole gas 3 at the interface at these two kinds of materials.Two-dimensional hole gas has the enhancing transverse current, and does not strengthen the ability of (even weakening) longitudinal current.Therefore, this structure helps electric current extending transversely in the p district.
2, the p-electrode of this device has adopted network structure 1 (b).This structure helps the extending transversely of electric current, and helps the light that device active region sends and appear from p type gallium nitride face.
Substrate also can adopt spinelle (MgAl in this device except that sapphire
2O
4), growth aluminium oxide compound substrate (Al on the aluminium nitride (AlN), zinc oxide (ZnO), silicon
2O
3/ Si), developing zinc oxide compound substrate (ZnO/Si) and AlN/SiC compound substrate on growing aluminum nitride compound substrate (AlN/Si), the silicon on the silicon.Here aluminium oxide compound substrate (Al grows on the silicon
2O
3/ Si) being meant the substrate that the double-decker of deposit alundum (Al film on conventional silicon substrate is formed, nitride will be grown in Al
2O
3Above.The rest may be inferred gives unnecessary details avoiding for other compound substrate.
One deck two-dimensional hole gas 3 is only contained in the p district in this device, adopts p-aluminium gallium nitride alloy 4 and the p type gallium nitride 2 that the growth energy gap is different continuously to constitute.Also can use multilayer two-dimension hole gas, adopt continuous growing p-type aluminium gallium nitride alloy, p type gallium nitride, both constitute arbitrarily in three kinds of materials of p type InGaN.
The p-electrode 1 of this device has adopted rectangle network structure 1 (b), also can adopt the network structure of other shape.
The n-electrode 8 of this device (double as contact conductor) is circular, and the contact conductor 1 (a) of p-electrode is a square.Both can be put upside down, or adopt other figure.
Embodiment two:
Fig. 3 and Fig. 4 are respectively the device profile map and the vertical views of the light-emitting diode of second embodiment, and this is the structure chart of InGaP (InGaP) ruddiness or orange light-emitting diode.This preparation of devices comprises following process:
1, consult Fig. 3, growing n-type GaAs successively on n p type gallium arensidep (GaAs) substrate 16, n type AlGaInP 14, n type InGaP active area 13, p type AlGaInP 12, p type gallium phosphides 11 etc. form the epitaxial material of device.
2, consult Fig. 4, adopt conventional device technologies such as evaporation of metal, on 11 layers of p type gallium phosphides, form p-electrode 10, wherein contain the metal pad 10 (b) of latticed metal electrode 10 (a) and contact conductor, formation n-electrode 17 on n p type gallium arensidep substrate 16.
3, device is cut into fritter.The lateral dimension of device (long and wide) is not less than 100 microns.Be device package at last.
Have a place to use the present invention in this device: because the lateral dimension of device is not less than 100 microns, and the longitudinal size in p district is at 0.1～10 micron, so the p district is the thin district of this device.The p-electrode of this device has adopted network structure 10 (a).This structure is distinguished p and is slit into fritter, has changed the physical dimension ratio in p district, helps the extending transversely of electric current, and helps the light that device active region sends and appear from p type gallium phosphide face.
The p-electrode of this device has adopted the hexagon network structure, also can adopt other network structure.
The n-electrode 17 of this device has been paved with entire n p type gallium arensidep substrate 16, also can not be paved with entire n p type gallium arensidep substrate.
The contact conductor 10 (b) of the p-electrode of this device is circular, also can adopt square or other figure.
The active area of this device is the n InGaP, also can be n type indium phosphide gallium aluminium (InGaAlP), to change emission wavelength.
Embodiment three:
Fig. 5 and Fig. 6 are respectively the device profile map and the vertical views of the light-emitting diode of the 3rd embodiment, and this is a GaAs infrared light light-emitting diode structure figure.This preparation of devices comprises following process:
1, consults Fig. 5, priority growing p-type GaAs 26 on p p type gallium arensidep (p-GaAs) substrate 27, p type aluminum gallium arsenide (p-AlGaAs) 25, p p type gallium arensidep active area 24, n type aluminum gallium arsenide (n-AlGaAs) 23, n p type gallium arensidep (n-GaAs) 21 etc., the epitaxial material of formation device.
2, consult Fig. 6, adopt conventional device technologies such as evaporation of metal, on n p type gallium arensidep layer 21, form the metal pad 20 of contact conductor, on p p type gallium arensidep substrate 27, form p-electrode 28.
3, device is cut into fritter.The lateral dimension of device (long and wide) is not less than 100 microns.Be device package at last.
In this device, there is a place to use the present invention.Because the lateral dimension of device is not less than 100 microns, and the longitudinal size in n district is at 0.1～10 micron, so the n district is the thin district of this device.Contain the different n type aluminum gallium arsenide 23 of continuous growth energy gap and 21 two kinds of semi-conducting materials of n p type gallium arensidep in the n district, formed one deck two-dimensional electron gas 22 at the interface at these two kinds of materials.Two-dimensional electron gas has the enhancing transverse current, and does not strengthen the ability of (even weakening) longitudinal current.Therefore, this structure helps electric current extending transversely in the n district.
One deck two-dimensional electron gas 22 is only contained in the n district in this device, adopts n type aluminum gallium arsenide 23 and the n p type gallium arensidep 21 that the growth energy gap is different continuously to constitute.Also can use multilayer two-dimension electron gas, adopt continuous growing n-type aluminum gallium arsenide, the n p type gallium arensidep, both constitute arbitrarily in three kinds of materials of n type InGaAsP (InGaAs).
The n-electrode 20 of this device (double as contact conductor) is circular, or adopts square or other figure.
The p-electrode 28 of this device has been paved with whole p p type gallium arensidep substrate 27, also can not be paved with whole p p type gallium arensidep substrate.
The active area of this device is the p p type gallium arensidep, also can be p type aluminum gallium arsenide or p type InGaAsP, to change emission wavelength.
Claims (8)
1. the manufacture method of a semiconductor surface luminescent device is characterized in that, this method comprises the steps:
1) grow successively on Sapphire Substrate 1～10 micron n type gallium nitride, active area, 0.1～1 micron p type aluminium gallium nitride alloy, 0.1～1 micron p type gallium nitride forms the epitaxial material of device;
2) adopt conventional photoetching process, etching technics device technology,, expose n type gallium nitride the part surface etching of epitaxial material;
3) adopt conventional evaporation of metal device technology, on p type gallium nitride layer, form the p-electrode, on n type gallium nitride layer, form the n-electrode;
4) device is cut into fritter, the lateral dimension of device is not less than 100 microns, is device package at last;
5) the cancellated p-electrode that adopts similar warp and parallel to be interweaved at the transparent surface of device, and have therein can be for the metal pad of device electrode lead-in wire;
6) contain one or more layers in the thin district of device and have two-dimensional electron gas or the two-dimensional hole gas that strengthens lateral current.
2. the manufacture method of semiconductor surface luminescent device according to claim 1 is characterized in that, wherein the said p-electrode of step 3) is latticed metal electrode, at one jiao of metal pad that is manufactured with a contact conductor of latticed metal electrode.
3. a semiconductor surface luminescent device is characterized in that, 1～10 micron the n type gallium nitride, active area, 0.1～1 micron p type aluminium gallium nitride alloy, 0.1～1 micron p type gallium nitride of wherein growing successively on Sapphire Substrate forms the epitaxial material of device; With the part surface etching of epitaxial material, expose n type gallium nitride; On p type gallium nitride layer, form the p-electrode, on n type gallium nitride layer, form the n-electrode; The cancellated p-electrode that adopts similar warp and parallel to be interweaved at the transparent surface of device, and have therein can be for the metal pad of device electrode lead-in wire; Contain one or more layers in the thin district of device and have two-dimensional electron gas or the two-dimensional hole gas that strengthens lateral current.
4. semiconductor surface luminescent device according to claim 3 is characterized in that, wherein the p-electrode is latticed metal electrode, at one jiao of metal pad that is manufactured with a contact conductor of latticed metal electrode.
5. a kind of semiconductor surface luminescent device according to claim 3 is characterized in that, the semiconductor layer in said n type district or p type district can be two layers or more; Every layer thickness is 1nm～100 μ m; Semiconductor layer can be mixed with impurity or not be mixed with impurity.
6. a kind of semiconductor surface luminescent device according to claim 3 is characterized in that one or more layers two-dimensional electron gas can be contained in the district in the n type, or one or more layers two-dimensional hole gas can be contained in p type district.
7. a kind of semiconductor surface luminescent device according to claim 3 is characterized in that, the mesh electrode in n type district, electrode are usually by the alloy composition of nickel, aluminium, titanium, zinc, tin and indium single-layer metal material or above-mentioned metal material; The mesh electrode in p type district, electrode are usually by the alloy composition of gold, platinum, tungsten, cobalt single-layer metal material or above-mentioned metal material.
8. a kind of semiconductor surface luminescent device according to claim 3 is characterized in that in a device, two-dimensional structure and mesh electrode can use separately, also can unite use.
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| CN00120889A CN1133217C (en) | 2000-08-15 | 2000-08-15 | Surficial luminous semiconductor device and method for increasing transverse current |
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| CN00120889A CN1133217C (en) | 2000-08-15 | 2000-08-15 | Surficial luminous semiconductor device and method for increasing transverse current |
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2000
- 2000-08-15 CN CN00120889A patent/CN1133217C/en not_active Expired - Fee Related
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| CN105655459A (en) * | 2016-02-25 | 2016-06-08 | 武汉大学 | Ultraviolet light-emitting diode chip and preparing method thereof |
| CN105655459B (en) * | 2016-02-25 | 2018-04-20 | 武汉大学 | A kind of UV LED chips and preparation method thereof |
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