CN1305186C - Method for manufacturing electric pumping edge emission semiconductor micro cavity laser - Google Patents
Method for manufacturing electric pumping edge emission semiconductor micro cavity laser Download PDFInfo
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- CN1305186C CN1305186C CNB2003101234501A CN200310123450A CN1305186C CN 1305186 C CN1305186 C CN 1305186C CN B2003101234501 A CNB2003101234501 A CN B2003101234501A CN 200310123450 A CN200310123450 A CN 200310123450A CN 1305186 C CN1305186 C CN 1305186C
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- emission semiconductor
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Abstract
The present invention relates to a method for manufacturing an electric pumping side emitting semiconductor microcavity laser, which is characterized in that the present invention comprises the following steps: firstly, an electrode is deposited on semiconductor materials; then, the needed appearance of the electrode is etched by photolithography and a wet method; registration photolithography is then carried out; then, a resonant cavity and a bracket are etched with a step-by-step etching method.
Description
Technical field
The invention belongs to the manufacture craft of semiconductor device, be meant the manufacture method of a kind of electric pump Pu edge-emission semiconductor micro-cavity laser especially.
Background technology
Semiconductor micro-cavity lasers, particularly microtrabeculae type resonance-cavity laser is a kind of photoelectric device that grows up in recent ten years, because it can utilize semi-conducting material itself to do refractive index and the air formation total internal reflection of low-refraction on every side, and volume is little, yardstick on one dimension or three-dimensional is the magnitude of wavelength, in gain cavity, only there are several optical modes to exist, therefore increased spontaneous emission greatly and be coupled to the sharp probability of penetrating in the mould, thereby reduced lasing threshold more to a great extent.And volume is little, and the integrated level height can be realized integrated on a large scale.
But its development has been subjected to some restrictions, especially electric pump Pu device, because its special shape and emission characteristics cause its manufacture craft can not indiscriminately imitate the manufacture craft of general stripe type laser, this has hindered the raising and the practicalization of its performance to a great extent.
In order to make the micro-cavity laser of function admirable, people have done many effort, mainly contain following several technology at present:
1) way that adopts band glue to evaporate; elder generation's photoetching; the part of needs being done electrode is exposed; other parts protect with resist, and evaporation electrode is peeled off then; being about to resist and the metal film on it and semi-conducting material peels off; so just obtain the shape of required electrode, and then carried out alignment, corrosion, obtained micro-resonant cavity and support.Shortcoming is the evaporation of band glue owing to be subjected to the restriction of back stripping technology, and that metal film can not be steamed is too thick, and the manufacture craft of electrode is confined to evaporation, can not adopt other technologies such as sputter as required, and the quality of electrode can not be guaranteed fully; Easy damaged material in stripping process, especially for more crisp InP based material, regular meeting scratches in stripping process, even cracked.
2) do electrode earlier, fall golden film with wet etching then, adopt reactive ion etching method to erode the shape that titanium film obtains required electrode again, and then carry out alignment, wet method or dry etching, obtain micro-resonant cavity and support.Shortcoming dry corrosion process complexity needs special equipment, complicated operation, and cost is higher.
Summary of the invention
The objective of the invention is to, the manufacture method of a kind of electric pump Pu edge-emission semiconductor micro-cavity laser is provided, utilize this method can be under the situation that does not need large-scale dry etching equipment, with simple experiment apparatus, only carry out shirtsleeve operation and just can finish the corrosion of micro-resonant cavity, make its restriction that no longer is subjected to equipment and operation, and can adopt suitable technology to the making of electrode as required, the quality of electrode can well be ensured.The present invention is applicable to that epitaxial growth contains the ternary of indium, phosphorus, gallium, arsenic or the material of quaternary compound on indium phosphide or the gallium arsenide substrate.
The manufacture method of a kind of electric pump of the present invention Pu edge-emission semiconductor micro-cavity laser is characterized in that, comprises the steps:
(A) elder generation's depositing electrode on semi-conducting material;
(B) photoetching then, wet etching go out required electrode pattern;
(C) carry out alignment again;
(D) erode away resonant cavity and support with the substep corroding method then.
Wherein said semi-conducting material is ternary or the quaternary compound that epitaxial growth contains indium, phosphorus, gallium, arsenic on indium phosphide or the gallium arsenide substrate.
Wherein the material of electrode is titanium/gold.
What wherein adopt is the substep corroding method, and behind the alignment, corrosion earlier 2 minutes is changed corrosive liquid then and corroded 4 minutes again.
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 is little column type resonant cavity vertical view;
Fig. 2 is little column type resonant cavity side diagrammatic sketch.
Specific implementation method
Please in conjunction with consulting accompanying drawing, Fig. 1 is little column type resonant cavity vertical view, and mid portion is an electrode; Fig. 2 is little column type resonant cavity end view.The present invention is the manufacture method of a kind of electric pump Pu edge-emission semiconductor micro-cavity laser, comprising, earlier on the material of making device titanium deposition/golden membranous layer as electrode, use then according to the reticle of required electrode shape design and carry out photoetching, the development post-etching goes out required electrode 1, pattern such as Fig. 1, the concrete shape of electrode is by the requirement decision of the device that will make; Obtain carrying out alignment again behind the electrode pattern, the used reticle of alignment should be according to the resonant cavity shaped design, adopts the substep corroding method to erode away resonant cavity 2 and support 3 at last.
The present invention is the manufacture method of a kind of electric pump Pu edge-emission semiconductor micro-cavity laser, comprises the steps:
(A) earlier be used to make depositing electrode on the semi-conducting material of laser, wherein said semi-conducting material is ternary or the quaternary compound that epitaxial growth contains indium, phosphorus, gallium, arsenic on indium phosphide or the gallium arsenide substrate; Wherein the material of electrode is titanium/gold; With the condition that possesses, electrode also can obtain with the method for sputter as required;
(B) behind the depositing electrode, carry out photoetching with the reticle sun version of making according to required electrode shape, develop, so just the electrode with required form protects with resist, method with wet etching erodes the titanium/golden film that is not protected then, obtains required electrode pattern; Wherein wet corrosion technique comprises: B1 acid gilding layer; B2 corrodes titanium film;
(C) carry out alignment again, the figure of the used reticle of alignment is the shape of resonant cavity, also should be the sun version, behind the alignment, just will comprise that the shape of the resonant cavity of electrode has protected with resist, to carry out next step corrosion experiment like this;
(D) erode away resonant cavity and support with the substep corroding method at last, wherein the substep corroding method is to corrode 2 minutes earlier behind the alignment, changing corrosive liquid then corroded 4 minutes again, corrosion for support can be changed the corrosive liquid corrosion according to needed shape, also can resonant cavity erode away together, if the shape of support shape resonant cavity is identical, then can resonant cavity erode away together, then need change as the shape difference and have optionally that corrosive liquid erodes away support.
Claims (4)
1, the manufacture method of a kind of electric pump Pu edge-emission semiconductor micro-cavity laser is characterized in that, comprises the steps:
(A) elder generation's depositing electrode on semi-conducting material;
(B) photoetching then, wet etching go out required electrode pattern;
(C) carry out alignment again;
(D) erode away resonant cavity and support with the substep corroding method then.
2, the manufacture method of electric pump according to claim 1 Pu edge-emission semiconductor micro-cavity laser is characterized in that wherein said semi-conducting material is ternary or the quaternary compound that epitaxial growth contains indium, phosphorus, gallium, arsenic on indium phosphide or the gallium arsenide substrate.
3, the manufacture method of electric pump according to claim 1 Pu edge-emission semiconductor micro-cavity laser is characterized in that wherein the material of electrode is titanium/gold.
4, the manufacture method of electric pump according to claim 1 Pu edge-emission semiconductor micro-cavity laser is characterized in that, what wherein adopt is the substep corroding method, and behind the alignment, corrosion earlier 2 minutes is changed corrosive liquid then and corroded 4 minutes again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101234501A CN1305186C (en) | 2003-12-29 | 2003-12-29 | Method for manufacturing electric pumping edge emission semiconductor micro cavity laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101234501A CN1305186C (en) | 2003-12-29 | 2003-12-29 | Method for manufacturing electric pumping edge emission semiconductor micro cavity laser |
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| Publication Number | Publication Date |
|---|---|
| CN1635673A CN1635673A (en) | 2005-07-06 |
| CN1305186C true CN1305186C (en) | 2007-03-14 |
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| CNB2003101234501A Expired - Fee Related CN1305186C (en) | 2003-12-29 | 2003-12-29 | Method for manufacturing electric pumping edge emission semiconductor micro cavity laser |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101030830B (en) * | 2007-01-19 | 2010-09-22 | 浙江大学 | Microwave receiving converter based on microdisk structure |
| CN103138157B (en) * | 2011-11-23 | 2015-04-22 | 光环科技股份有限公司 | Edge-emitting semiconductor laser element, manufacturing method thereof and crystal strip with edge-emitting semiconductor laser element |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1116852A (en) * | 1997-06-25 | 1999-01-22 | Sumitomo Chem Co Ltd | Production of electrode for 3-5 compound semiconductor and 3-5 compound semiconductor device |
| JPH1154843A (en) * | 1997-08-01 | 1999-02-26 | Fujitsu Ltd | Semiconductor device and manufacture |
| JP2000269592A (en) * | 1999-01-11 | 2000-09-29 | Fuji Photo Film Co Ltd | Semiconductor device |
| JP2001015452A (en) * | 1999-06-28 | 2001-01-19 | Hitachi Ltd | Compound semiconductor device and fabrication thereof |
| CN1338783A (en) * | 2000-08-15 | 2002-03-06 | 中国科学院半导体研究所 | Surficial luminous semiconductor device and method for increasing transverse current |
| CN1652418A (en) * | 2004-02-05 | 2005-08-10 | 中国科学院半导体研究所 | Technique for making electric pumping side emitting semiconductor micro-cavity laser |
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2003
- 2003-12-29 CN CNB2003101234501A patent/CN1305186C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1116852A (en) * | 1997-06-25 | 1999-01-22 | Sumitomo Chem Co Ltd | Production of electrode for 3-5 compound semiconductor and 3-5 compound semiconductor device |
| JPH1154843A (en) * | 1997-08-01 | 1999-02-26 | Fujitsu Ltd | Semiconductor device and manufacture |
| JP2000269592A (en) * | 1999-01-11 | 2000-09-29 | Fuji Photo Film Co Ltd | Semiconductor device |
| JP2001015452A (en) * | 1999-06-28 | 2001-01-19 | Hitachi Ltd | Compound semiconductor device and fabrication thereof |
| CN1338783A (en) * | 2000-08-15 | 2002-03-06 | 中国科学院半导体研究所 | Surficial luminous semiconductor device and method for increasing transverse current |
| CN1652418A (en) * | 2004-02-05 | 2005-08-10 | 中国科学院半导体研究所 | Technique for making electric pumping side emitting semiconductor micro-cavity laser |
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