CN111900109A - CMP cleaning and drying device - Google Patents
CMP cleaning and drying device Download PDFInfo
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- CN111900109A CN111900109A CN202010728026.3A CN202010728026A CN111900109A CN 111900109 A CN111900109 A CN 111900109A CN 202010728026 A CN202010728026 A CN 202010728026A CN 111900109 A CN111900109 A CN 111900109A
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- wafer
- channel
- sheet
- feeding
- side wall
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The application relates to the technical field of semiconductor manufacturing, in particular to a CMP cleaning and drying device. The CMP cleaning and drying device comprises: the cleaning cavity comprises a first side wall and an inclined second side wall, a sheet feeding channel is formed along the first side wall, a sheet discharging channel is formed along the second side wall, and the sheet feeding channel and the sheet discharging channel are intersected at the bottom end of the cleaning cavity; the drying cavity is positioned at the upper end of the sheet outlet channel, the drying cavity forms an inlet and an outlet, and the inlet is communicated with the sheet outlet channel; the rotary receiving device is arranged at the intersection of the wafer feeding channel and the wafer discharging channel and is used for driving the wafer to be turned from the wafer feeding channel to the wafer discharging channel; and the deionized water spray head is arranged on the wafer inlet channel and the wafer outlet channel. The application provides a CMP washs drying device can solve the problem that the resistance that produces because of the deionized water is undulant among the correlation technique causes the wafer fragment.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to a CMP cleaning and drying device.
Background
In the semiconductor integrated circuit manufacturing process, after the wafer surface is planarized by a Chemical Mechanical Planarization (CMP) step, a series of cleaning steps are required to remove impurities such as slurry or particles remaining on the wafer surface during the polishing process, so as to ensure the quality of the wafer in the subsequent processing and manufacturing processes.
The related art generally employs a washing and drying step including: and immersing the polished and ground wafer into deionized water, moving the wafer in the deionized water to remove impurities on the surface of the wafer, and finally drying the wafer in a drying chamber.
However, the fluctuation of the deionized water caused by operations such as external liquid adding causes resistance to the wafer immersed therein, and the wafer is easily broken due to the resistance.
Disclosure of Invention
The application provides a CMP washs drying device can solve the problem that the resistance that produces because of the deionized water is undulant among the correlation technique causes the wafer fragment.
The application provides a CMP washs drying device, CMP washs drying device includes:
the cleaning cavity comprises a first side wall and an inclined second side wall, a sheet inlet channel is formed along the first side wall, a sheet outlet channel is formed along the second side wall, and the sheet inlet channel and the sheet outlet channel are intersected at the bottom end of the cleaning cavity;
the drying cavity is positioned at the upper end of the sheet outlet channel, an inlet and an outlet are formed in the drying cavity, and the inlet is communicated with the sheet outlet channel;
the rotary receiving device is arranged at the intersection of the wafer feeding channel and the wafer discharging channel and is used for driving the wafer to turn from the wafer feeding channel to the wafer discharging channel;
and the deionized water spray header is arranged on the wafer inlet channel and the wafer outlet channel.
Optionally, the deionized water showerhead includes:
the wafer feeding spray headers are arranged on the first side wall at intervals along the wafer feeding channel;
and the sheet outlet spray heads are arranged on the second side wall at intervals along the sheet outlet channel.
Optionally, a pair of wafer feeding spray heads is arranged at the inlet of the wafer feeding channel, and the pair of wafer feeding spray heads can respectively spray the front side and the back side of the wafer.
Optionally, the wafer feeding spray header sprays deionized water toward the front of the wafer feeding direction.
Optionally, a pair of wafer outlet spray heads is arranged at an outlet of the wafer outlet channel, and the pair of wafer outlet spray heads can respectively spray the front side and the back side of the wafer.
Optionally, the sheet outlet spray header sprays deionized water toward the rear of the sheet outlet direction.
Optionally, a rotating space is formed between the sheet inlet channel and the sheet outlet channel;
the wafer is driven by the rotating receiving device, the rotating receiving device is used as an original point, and the wafer rotates from the position of the wafer feeding channel to pass through the rotating space and enter the position of the wafer discharging channel.
Optionally, the rotation space is fan-shaped.
The technical scheme at least comprises the following advantages: the application provides a CMP washs drying device, when wasing and drying wafer surface, the wafer gets into the piece passageway from advancing the entry of piece passageway 113, and until reaching rotation receiving arrangement position department, in advancing the piece passageway, the deionized water shower head sprays deionized water to wafer 200 surfaces, gets rid of wafer surface impurity. Rotate receiving arrangement and drive the wafer and rotate to a piece passageway state, go out the piece passageway and remove the in-process, the deionized water shower head sprays deionized water to wafer surface, gets rid of wafer surface impurity, washs the end, forms the deionized water membrane on the surface of wafer, gets into the stoving process afterwards, the CMP that this application provided washs drying device can make the wafer surface can not receive the influence of unstable external force, and to a great extent has reduced the risk of wafer fragment.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic longitudinal sectional structural view of a CMP cleaning and drying apparatus according to an embodiment of the present disclosure;
FIG. 2 is a schematic view of a wafer entering a cleaning chamber of a CMP cleaning and drying apparatus provided in an embodiment of the present application;
FIG. 3 is a schematic view of a CMP cleaning and drying apparatus according to an embodiment of the present application in a state where a wafer is received by a rotary receiving device;
FIG. 4 is a schematic view of a CMP cleaning and drying apparatus according to an embodiment of the present disclosure when a rotation receiving device drives a wafer to rotate to a wafer discharging channel;
FIG. 5 is a schematic view of a wafer entering a drying chamber of a CMP cleaning and drying apparatus provided in an embodiment of the present application;
FIG. 6 is a schematic cross-sectional view of a CMP cleaning and drying apparatus according to another embodiment of the present disclosure;
FIG. 7 is a schematic sectional view A-A of FIG. 6.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 1, a CMP cleaning and drying apparatus according to an embodiment of the present application is schematically illustrated, and the CMP cleaning and drying apparatus includes:
a cleaning chamber 110, wherein the cleaning chamber 110 comprises a first side wall 111 and an inclined second side wall 112, a sheet inlet channel 113 is formed along the first side wall 111, a sheet outlet channel 114 is formed along the second side wall 112, and the sheet inlet channel 113 and the sheet outlet channel 114 meet at the bottom end of the cleaning chamber 110;
a drying chamber 120, wherein the drying chamber 120 is located at the upper end of the sheet outlet channel 114, the drying chamber 120 forms an inlet and an outlet, and the inlet of the drying chamber 120 is communicated with the sheet outlet channel 114;
the rotating receiving device 130 is arranged at the intersection of the wafer feeding channel 113 and the wafer discharging channel 114, and is used for driving the wafer 200 to rotate from the wafer feeding channel 113 to the wafer discharging channel 114;
and the deionized water spray header is arranged on the wafer inlet channel 113 and the wafer outlet channel 114.
When cleaning, fig. 2 is a schematic view of a wafer entering a cleaning chamber of the CMP cleaning and drying apparatus provided in the embodiment of the present application, as shown in fig. 2, the wafer 200 can be carried by a moving arm (not shown) from an inlet of the wafer feeding path 113 into the wafer feeding path 113 until reaching the position of the rotation receiving apparatus 130, as shown in fig. 3, and fig. 3 is a schematic view of the CMP cleaning and drying apparatus provided in the embodiment of the present application when the rotation receiving apparatus is in a wafer state.
It should be noted that, instead of the wafer 200 being carried by the moving arm from the entrance of the wafer feeding path 113 into the wafer feeding path 113, other conventional moving devices can be used to carry the wafer 200 from the entrance of the wafer feeding path 113 into the wafer feeding path 113.
In the wafer feeding channel 113, the deionized water spray head sprays deionized water onto the surface of the wafer 200 to remove impurities on the surface of the wafer 200. Fig. 4 is a schematic view of the CMP cleaning and drying apparatus provided in the embodiment of the present application when the wafer is driven to rotate to the wafer discharging passage by the rotation receiving device, as shown in fig. 4, the wafer 200 is clamped by the rotation receiving device 130, the wafer 200 is driven to rotate from the wafer feeding passage 113 to the wafer discharging passage 114, the wafer 200 is driven to move along the wafer discharging passage 114 by the traveling device (not shown in the figure), during the process that the wafer 200 moves along the wafer discharging passage 114, the deionized water spray head sprays deionized water onto the surface of the wafer 200 to remove impurities on the surface of the wafer 200, after the cleaning, a deionized water film is formed on the surface of the wafer 200, and then the wafer is dried, as shown in fig. 5, fig. 5 is a schematic view of the wafer entering the drying chamber of the CMP cleaning and drying apparatus provided in the embodiment of the present application, during the drying process, the traveling device (not shown in the figure) drives the wafer 200, IPA (Iso Propyl Alcohol) is sprayed on the surface of the wafer 200 through an IPA nozzle in the drying chamber 120, and the IPA drying utilizes the characteristics of low surface tension and volatility of IPA to replace moisture with high surface tension on the surface of the wafer 200, and then the wafer 200 surface water film is dried by nitrogen gas.
As shown in fig. 1 to 5, the deionized water showerhead includes:
and the wafer inlet spray headers 140 are arranged on the first side wall 111 at intervals along the wafer inlet channel 113.
And the sheet outlet spray heads 150 are arranged on the second side wall 112 at intervals along the sheet outlet channel 114, and the sheet outlet spray heads 150 are arranged on the second side wall 112 at intervals.
A pair of wafer-feeding showerheads 140 are disposed at the inlet of the wafer-feeding channel 113, the pair of wafer-feeding showerheads 140 can respectively shower the front and back surfaces of the wafer 200, and the wafer-feeding showerheads 140 spray deionized water toward the front of the wafer-feeding direction, which is the direction a shown in fig. 2.
A pair of wafer outlet spray heads 150 is arranged at the outlet of the wafer outlet channel 114, the pair of wafer outlet spray heads 150 can respectively spray the front and the back of the wafer 200, the wafer outlet spray heads 150 spray deionized water towards the back of the wafer outlet direction, and the wafer outlet direction is opposite to the direction B shown in fig. 2.
In the process that the moving arm (not shown) carries the wafer 200 to enter the wafer inlet 113 from the inlet of the wafer inlet 113 until the position of the rotary receiving device 130 is reached, a pair of wafer inlet showers 140 respectively shower the front and back of the wafer 200 at the inlet of the wafer inlet 113, the wafer inlet showers 140 spaced apart on the first side wall 111 in the wafer inlet 113 shower the front of the wafer 200, the wafer outlet showers 150 spaced apart on the second side wall 112 shower the back of the wafer 200 during the movement of the wafer 200 along the wafer outlet 114, and the wafer outlet showers 150 respectively shower the front and back of the wafer 200 at the outlet of the wafer outlet 114 through the pair of wafer outlet showers 150, thereby entering the drying chamber 120.
A rotating space 115 is formed between the sheet inlet channel 113 and the sheet outlet channel 114; as shown in fig. 3 and 4, the wafer 200 is driven by the rotating and receiving device 130, and rotates from the position of the wafer feeding channel 113 through the rotating space 115 to the position of the wafer discharging channel 114 with the rotating and receiving device 130 as the origin. In order to enable the wafer to rotate better under the driving of the rotation receiving device 130, the rotation space 115 has a fan shape. It should be explained that, in order to realize that the wafer 200 enters the position of the sheet outlet channel 114 after rotating through the rotating space 115, the rotating receiving device 130 may be designed to move up and down, for example, by installing a traveling cylinder (not shown in the figure) below the rotating receiving device 130; when the traveling cylinder ascends, the wafer is driven by the rotation receiving device 130 to move upward into the wafer discharging passage 114.
In the rotation space 115, the wafer 200 is driven by the rotation receiving device 130 to rotate from the position of the wafer feeding channel 113 through the rotation space 115 with the rotation receiving device 130 as an origin, and in the process, the surface of the wafer 200 is not affected by other unstable external forces such as deionized water, so that the risk of wafer 200 breakage is greatly reduced.
Fig. 6 is a schematic cross-sectional view of a CMP cleaning and drying apparatus according to another embodiment of the present application based on any one of the structures shown in fig. 1 to 5. Fig. 7 is a schematic sectional view of fig. 6A-a.
Referring to fig. 6 and 7, the first side wall 111 and the inclined second side wall 112 are respectively provided with a flow passage 160 therein, and the flow passage 160 is respectively communicated with the deionized water showerheads arranged on the first side wall 111 and the inclined second side wall 112 for supplying deionized water to the deionized water showerheads through the flow passage.
With continued reference to fig. 6 and 7, an adjusting lever 170 is disposed between the first sidewall 111 and the inclined second sidewall 112, the adjusting lever 170 is rotatable, and a row of sheet feeding showerheads 140 is disposed on a side of the adjusting lever 170 adjacent to the entrance position of the sheet feeding passage 113, and the sheet feeding showerheads 140 are used for showering toward the entrance of the sheet feeding passage 113. Optionally, a discharge sheet spray header 150 is disposed on a side of the adjusting rod 170 near the outlet of the sheet outlet channel 114, and the sheet inlet spray header 140 is used for spraying toward the outlet of the sheet outlet channel 114. The adjusting lever 170 is also provided with a flow passage 160, and the flow passage 160 is communicated with the wafer inlet shower head 140 and the wafer outlet shower head 150 which are respectively arranged on the adjusting lever.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.
Claims (8)
1. A CMP cleaning and drying device is characterized by comprising:
the cleaning cavity comprises a first side wall and an inclined second side wall, a sheet inlet channel is formed along the first side wall, a sheet outlet channel is formed along the second side wall, and the sheet inlet channel and the sheet outlet channel are intersected at the bottom end of the cleaning cavity;
the drying cavity is positioned at the upper end of the sheet outlet channel, an inlet and an outlet are formed in the drying cavity, and the inlet of the drying cavity is communicated with the sheet outlet channel;
the rotary receiving device is arranged at the intersection of the wafer feeding channel and the wafer discharging channel and is used for driving the wafer to turn from the wafer feeding channel to the wafer discharging channel;
and the deionized water spray header is arranged on the wafer inlet channel and the wafer outlet channel.
2. The CMP cleaning and drying apparatus of claim 1, wherein the di water shower head comprises:
the wafer feeding spray headers are arranged on the first side wall at intervals along the wafer feeding channel;
and the sheet outlet spray heads are arranged on the second side wall at intervals along the sheet outlet channel.
3. The CMP cleaning and drying apparatus of claim 1, wherein a pair of wafer-feeding showerheads are provided at the entrance of the wafer-feeding passage, and the pair of wafer-feeding showerheads can respectively shower the front and back surfaces of the wafer.
4. The CMP cleaning and drying apparatus of claim 2 or 3, wherein the wafer-feeding shower head sprays deionized water toward the front of the wafer-feeding direction.
5. The CMP cleaning and drying apparatus of claim 1, wherein a pair of wafer discharge showerheads are disposed at the outlets of the wafer discharge channels, and the pair of wafer discharge showerheads are capable of showering onto the front and back surfaces of the wafer, respectively.
6. The CMP cleaning and drying apparatus of claim 2 or 5, wherein the wafer outlet spray head sprays deionized water toward the rear of the wafer outlet direction.
7. The CMP cleaning and drying apparatus of claim 1, wherein a rotation space is formed between the sheet feeding path and the sheet discharging path;
the wafer is driven by the rotating receiving device, the rotating receiving device is used as an original point, and the wafer rotates from the position of the wafer feeding channel to pass through the rotating space and enter the position of the wafer discharging channel.
8. The CMP cleaning and drying apparatus of claim 7, wherein the rotating space has a fan shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010728026.3A CN111900109A (en) | 2020-07-23 | 2020-07-23 | CMP cleaning and drying device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010728026.3A CN111900109A (en) | 2020-07-23 | 2020-07-23 | CMP cleaning and drying device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111900109A true CN111900109A (en) | 2020-11-06 |
Family
ID=73190030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010728026.3A Withdrawn CN111900109A (en) | 2020-07-23 | 2020-07-23 | CMP cleaning and drying device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111900109A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1650396A (en) * | 2001-11-02 | 2005-08-03 | 应用材料股份有限公司 | Single wafer dryer and drying methods |
-
2020
- 2020-07-23 CN CN202010728026.3A patent/CN111900109A/en not_active Withdrawn
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1650396A (en) * | 2001-11-02 | 2005-08-03 | 应用材料股份有限公司 | Single wafer dryer and drying methods |
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Application publication date: 20201106 |
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| WW01 | Invention patent application withdrawn after publication |