KR101180424B1 - Chemical mechanical polishing apparatus and chemical mechanical polishing pad - Google Patents

Abstract

Provided are chemical mechanical polishings for use in chemical mechanical polishing processes. The chemical mechanical polishing apparatus includes a polishing table having at least one slurry discharge pipe opening at an upper surface, a slurry supply portion for supplying a slurry to the upper surface of the polishing table, and a polishing head on which an object to be polished is mounted.

CMP, slurry, polishing pad, polishing table, slurry release prevention part, discharge hole

Description

Chemical mechanical polishing apparatus and chemical mechanical polishing pad

1 is a schematic perspective view of a chemical mechanical polishing apparatus of a conventional semiconductor substrate.

2 is a cross-sectional view of the chemical mechanical polishing apparatus according to the first embodiment of the present invention.

3A is a plan view of a polishing table of the chemical mechanical polishing apparatus according to the first embodiment of the present invention.

3B is a cross-sectional view taken along the line BB ′ of FIG. 3A.

3C is a perspective view of the chemical mechanical polishing apparatus cut along the line BB ′ of FIG. 3A.

4A is a plan view of a polishing table of the chemical mechanical polishing apparatus according to the modified embodiment of the first embodiment of the present invention.

4B is a cross-sectional view taken along the line BB ′ of FIG. 4A.

5 is a cross-sectional view of the chemical mechanical polishing apparatus according to the second embodiment of the present invention.

6A is a plan view of a polishing table of the chemical mechanical polishing apparatus according to the second embodiment of the present invention.

FIG. 6B is a cross-sectional view taken along the line BB ′ of FIG. 6A.

FIG. 6C is a perspective view of the chemical mechanical polishing apparatus cut along the line BB ′ of FIG. 6A.

7 is a cross-sectional view showing a modification of the polishing table of the chemical mechanical polishing apparatus according to the second embodiment of the present invention.

8A is a plan view of a chemical mechanical polishing pad according to a first embodiment of the present invention.

FIG. 8B is a cross-sectional view taken along the line BB ′ of FIG. 8A.

8C is a perspective view of a chemical mechanical polishing pad according to a first embodiment of the present invention.

9A is a plan view showing a modification of the chemical mechanical polishing pad according to the first embodiment of the present invention.

FIG. 9B is a cross-sectional view taken along the line BB ′ of FIG. 9A.

10A is a plan view of a chemical mechanical polishing pad according to a second embodiment of the present invention.

FIG. 10B is a cross-sectional view taken along the line BB ′ of FIG. 10A.

10C is a perspective view of a chemical mechanical polishing pad according to a second embodiment of the present invention.

11 is a cross-sectional view showing a modification of the chemical mechanical polishing apparatus according to the second embodiment of the present invention.

12 is a cross-sectional view showing a state in which the chemical mechanical polishing pad according to the second embodiment of the present invention is attached to the chemical polishing device according to the first embodiment of the present invention.

13 is a cross-sectional view showing a state in which the chemical mechanical polishing pad according to the first embodiment of the present invention is attached to the chemical polishing device according to the second embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100, 101: chemical mechanical polishing apparatus 110, 111: polishing table

110a and 111a: upper surface of the polishing table 120, 121, 122: discharge pipe

120a: outlet pipe opening 120b: outlet pipe outlet

130: slurry escape prevention wall 130a: inside

130b: outer 140: slurry supply device

150: polishing head 200, 201: chemical mechanical polishing pad

210: polished surface 220: discharge hole

230: slurry separation prevention portion 230a: inside

230b: outside

The present invention relates to a chemical mechanical polishing apparatus and a chemical mechanical polishing pad of a semiconductor substrate, and more particularly, to a chemical mechanical polishing apparatus including a slurry discharge pipe and a chemical mechanical polishing pad including a slurry discharge hole in a chemical mechanical polishing process. will be.

Chemical Mechanical Polishing (CMP) refers to a process of planarizing the surface of a semiconductor substrate by combining a mechanical polishing effect by an abrasive and a chemical reaction effect by an acid or base solution. In other words, chemical mechanical polishing is a planarization process that removes protruding portions of the surface of the semiconductor substrate, and is made of a material such as copper (Cu), which is difficult to manufacture a multi-layered wiring semiconductor device, or which is difficult to dry dry. Used to form drank wirings and the like.

Conventional chemical mechanical polishing is a polishing table 11, a slurry supply unit 12 for supplying a slurry to the polishing pad 20, as shown in FIG. And a chemical mechanical polishing pad 20 mounted on the upper surface of the polishing table.

Here, the polishing table 11 is equipped with a flexible polishing pad 20 on its upper surface, the slurry supply unit 12 supplies a slurry between the semiconductor substrate and the polishing pad 20, the fine abrasive particles added to the chemical solution. Then, the polishing head 14 presses and rotates the semiconductor substrate mounted on the bottom to polish the surface of the semiconductor substrate. At this time, the polishing table 11 is rotated to simultaneously rotate the polishing pad 20 mounted thereon to adjust the relative rotational speed of the semiconductor substrate with respect to the polishing pad 20, and evenly supply the slurry to the polishing pad 20.

However, in the case of such a chemical mechanical polishing apparatus according to the prior art, since the slurry is supplied while the polishing table and the polishing pad mounted thereon are rotated, the slurry sprayed from the slurry supply part is discharged to the outside of the polishing table by centrifugal force and the slurry is supplied. Is excessively lost without being properly supplied to the contact surface of the semiconductor substrate on the polishing pad.

It is an object of the present invention to provide a chemical mechanical polishing apparatus including a polishing table capable of reducing the amount of slurry used.

Another object of the present invention is to provide a chemical mechanical polishing pad capable of reducing the amount of slurry used.

Technical problems to be achieved by the present invention are not limited to the above-mentioned technical problems, and other technical problems not mentioned will be clearly understood by those skilled in the art from the following description.

In accordance with another aspect of the present invention, there is provided a chemical mechanical polishing apparatus including a polishing table having at least one slurry discharge pipe opening at an upper surface thereof, a slurry supply unit supplying a slurry to an upper surface of the polishing table, and an object to be polished. It includes a polishing head to be mounted.

Chemical mechanical polishing pad according to an embodiment of the present invention for solving the other technical problem includes a polishing surface and at least one discharge hole formed on the polishing surface.

Specific details of other embodiments are included in the detailed description and the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and how to accomplish them, will become apparent by reference to the embodiments described in detail below with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms, and only the present embodiments make the disclosure of the present invention complete, and the general knowledge in the technical field to which the present invention belongs. It is provided to fully convey the scope of the invention to those skilled in the art, and the invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

2, a chemical mechanical polishing apparatus 100 according to a first embodiment of the present invention will be described. 2 is a cross-sectional view of the chemical mechanical polishing apparatus 100 according to the first embodiment of the present invention.

The chemical mechanical polishing apparatus 100 according to the first embodiment of the present invention includes a polishing table 110, a slurry supply unit 140, and a polishing head 150 including one or more discharge pipes 120 as shown in FIG. 2. Include.

The polishing table 110 serves as a place where the polishing pad 201 is mounted and supports and rotates the polishing pad 201. This polishing table 110 includes one or more discharge tubes 120 for discharging the slurry used in the polishing process as shown in FIGS. 3A, 3B and 3C.

The discharge pipe 120 may pass through the polishing table 110 by opening 120a at the top surface 110a of the polishing table, and an outlet 120b may be formed outside the polishing table 110. The number of discharge pipes 120 does not necessarily need to be one, and the number may be determined as necessary. The opening 120a of the discharge pipe 120 can be formed in any area of the upper surface 110a of the polishing table except for the area corresponding to the area of the polishing pad 201 in which polishing is carried out by the polishing head 150, For example, it may be preferably formed in the center portion of the upper surface (110a) of the polishing table, as shown in Figure 3a, and if necessary, adjacent to the outer periphery of the polishing table 110, as shown in Figure 4a Can be. The outlet 120b of the discharge pipe 120 may be formed in any area except for the upper surface 110a of the polishing table, and may be formed at the vertical bottom of the opening 120a of the discharge pipe 120 for quick discharge of the slurry, for example. Can be. As shown in FIG. 4A, when the opening of the discharge pipe is two or more, the outlet may be two or more, but as shown in FIG. 4B, the discharge pipes 121 and 122 may be connected to each other in the interior of the polishing table 110. The outlets can be used as the same to discharge the slurry flowing from the different openings into one outlet 121b. The discharge pipe 120 may have a cylindrical shape, for example, but may be formed to have an inner diameter smaller or larger from the discharge pipe 120 opening, if necessary, but is not limited thereto. In addition, the inner diameter of the discharge pipe 120 may be appropriately adjusted as necessary in view of the slurry supply speed, slurry discharge speed, the number of discharge pipe 120, the position of the discharge pipe 120 and the like. The material of the discharge pipe 120 may be any material capable of chemically resisting the slurry, and it may be sufficient to simply penetrate the inside of the polishing table 110 without inserting the discharge pipe 120 externally.

Referring back to FIG. 2, the slurry supply unit 140 serves to supply the slurry required for the chemical mechanical polishing process to the polishing pad 201 mounted on the upper surface 110a of the polishing table. The slurry supply unit 140 may include spraying means for spraying the slurry evenly on the polishing pad 201.

The polishing head 150 fixedly supports and transports the semiconductor substrate and places the semiconductor substrate on the polishing pad 201. That is, the lower surface of the semiconductor substrate may be positioned to face the polishing pad 200, and the upper surface of the semiconductor substrate may be positioned to face the lower surface of the polishing head 150. As the polishing pad 201 rotates, the polishing head 150 pressurizes and rotates the semiconductor substrate to polish the semiconductor substrate.

Next, referring to FIG. 5, a chemical mechanical polishing apparatus 101 according to a second embodiment of the present invention will be described. 2 is a cross-sectional view of the chemical mechanical polishing apparatus 101 according to the second embodiment of the present invention.

As shown in FIG. 5, the chemical mechanical polishing apparatus 101 according to the second embodiment of the present invention includes a polishing table 111, a slurry supply unit 140, and one or more discharge pipes 120 and a slurry separation preventing wall formed therein. Polishing head 150. The slurry supply part 140, the polishing head 150, and the discharge pipe 120 of the polishing table 111 included in the chemical mechanical polishing apparatus 101 according to the second embodiment of the present invention are provided in the first embodiment of the present invention. Since the same as in the case of the chemical mechanical polishing apparatus 100 according to the above, the overlapping description is omitted, and the slurry release preventing wall 130 of the polishing table 111 will be described here.

6A, 6B, and 6C, the slurry escape preventing wall 130 is formed along the outer circumference of the polishing table 110 to prevent the slurry supplied from the slurry supply unit 140 from escaping to the outside of the polishing table 111. Is formed.

The slurry escape preventing wall 130 is formed by, for example, refracting the polishing table 111 in the direction of the upper surface 111a of the polishing table, or separately prepares the slurry release preventing wall 130 along the outer circumference of the polishing table 111. It can form by the method of adhering.

The inner side of the slurry escape preventing wall 130 positioned adjacent to the upper surface 111a of the polishing table may be formed above the upper surface 111a of the polishing table, for example. That is, the angle formed between the top surface 111a of the polishing table and the inside of the slurry release preventing wall 130 is 0 ° or 180 °, or the inside of the slurry release prevention wall 130 is below the top surface 111a of the polishing table. When it is refracted and exceeds 180 °, the separation of the slurry cannot be prevented. Therefore, the angle θ of the inside of the slurry escape preventing wall 130 and the upper surface 111a of the polishing table is 0 ° ≦ θ <180 °. Can be. In addition, when the slurry escape preventing wall 130 is formed by refraction toward the upper surface 111a of the polishing table, the polishing surface may be substantially reduced and may cause inconvenience in polishing operation. Thus, for example, the slurry escape preventing wall 130 may have an obtuse angle between the inner surface 130a of the slurry escape preventing wall 130 and the upper surface 111a of the polishing table, that is, the inside 130a of the slurry escape preventing wall 130. An angle θ formed between any one point of and the upper surface 111a of the polishing table may be formed to have a range of 90 ° ≦ θ <180 °.

At this time, the shape of the inner side (130a) of the slurry escape preventing wall 130 is not limited and can be appropriately adjusted in view of the repulsive force against the impact of the slurry, the gravity of the slurry moving along the slurry escape preventing wall 130. In order to uniformly control the amount of slurry that collides with the inner side 130a of the slurry escape preventing wall 130 and then re-enters onto the polishing pad 200 mounted on the polishing table 111, The inner side of all the longitudinal cross-sections can be formed in the same shape with respect to the upper surface 111a of the polishing table. In addition, the inner sides of all the longitudinal cross-sections of the anti-separation wall 130 may be formed in a straight line as shown in FIG. 6B, but may be formed in a curved line as shown in FIG.

The amount of slurry re-entered by the slurry escape preventing wall 130 may be controlled by the angle and height of the inner side 130a of the slurry escape preventing wall 130. The amount of slurry to re-enter onto the polishing pad 200 mounted on the polishing table 111 is adjusted by adjusting the angle of the inner side 130a of the slurry escape preventing wall 130 to the upper surface 111a of the polishing table to about 90 °. This can increase. In addition, by increasing the height of the slurry separation prevention wall 130, it is possible to further prevent the slurry from leaving the slurry departure prevention wall 130 to the outside of the polishing table 111.

The thickness of the slurry escape preventing wall 130 may be adjusted within a range having mechanical strength that can to some extent resist the impact of the slurry and external impact.

The inner surface 130a of the slurry escape preventing wall 130 may have a direct physical collision due to the slurry. When such physical collision causes deformation of the inner surface 130a of the slurry escape preventing wall 130, the slurry re-entry is performed. The rate changes so that a uniform amount cannot be re-entered. In addition, when the inner surface 130a of the slurry escape preventing wall chemically reacts directly with the slurry, not only physical changes but also chemical reactants are introduced into the polishing pad 200 mounted on the polishing table 111 so that the polishing pad 200 It can damage and contaminate the slurry. Therefore, as the material of the inner surface 130a of the slurry escape preventing wall 130, a material having at least a high strength with respect to the slurry and capable of resisting chemical deformation may be used.

The outer side 130b of the slurry escape preventing wall 130 located on the back surface of the inner side 130a of the slurry escape preventing wall 130 is similar to the inner side 130a of the slurry escape preventing wall 130 because there is no direct collision with the slurry. There is no need to meet stringent conditions and the appropriate shape and thickness can be determined as needed.

Next, a chemical mechanical polishing pad 200 according to an embodiment of the present invention will be described with reference to FIGS. 8A, 8B and 8C.

The chemical mechanical polishing pad 200 according to the first embodiment of the present invention includes a polishing surface 210 and at least one discharge hole 220 formed on the polishing surface 210.

The polishing surface 210 is a surface in which the semiconductor substrate is in direct contact, and may be made of an elastic material having a rough polishing surface. To facilitate the polishing process, the surface of the polishing surface 210 may include a texture.

The discharge hole 220 is formed on the polishing surface 210 to discharge the slurry used for polishing, and the polishing table 111 of the chemical mechanical polishing apparatus (see 101 in FIG. 5) in contact with the lower surface of the polishing pad 200. It may be connected to the discharge pipe 120 formed in). The number of discharge holes 220 need not necessarily be one, and the number may be determined as necessary. It can be formed in any area on the polishing surface 210 except for the area where polishing is carried out by the polishing head 150 on which the semiconductor substrate is mounted, for example, preferably in the center of the polishing pad 200. It may be formed adjacent to the outer circumference of the polishing pad 200. The diameter of the discharge hole may be appropriately adjusted as necessary in view of the slurry discharge rate, the number of discharge holes 220, the position of the discharge hole 220 and the like. The shape of the discharge hole 220 is not limited, and the diameter of the discharge hole on the polishing surface 210 and the lower surface of the polishing pad 200 connected thereto may be different. For example, as shown in FIGS. 9A and 9B, the diameter 221 of the upper surface of the polishing surface 210 is larger than the diameter 222 of the lower surface of the polishing pad 200 of the discharge hole, thereby inclining the surface of the polishing surface 210. It may be formed in a shape coming down.

As described above, the hardness of the polishing pad 200 is, for example, when the top surface (see 111a of FIG. 5) of the polishing table to which the bottom surface of the polishing pad 200 contacts is different from the shape of the polishing pad 200. According to the shape of the (111a) may be soft enough to be conformally mounted (elastic), but can be elastically mounted, the hardness can be variously adjusted as long as it can be conformally mounted.

The chemical mechanical polishing pad 201 according to the second embodiment of the present invention includes a polishing surface 210, at least one discharge hole formed on the polishing surface 210, and a slurry release preventing unit 230. The chemical mechanical polishing pad 200 according to the second embodiment of the present invention and the polishing surface 210 and at least one discharge hole 220 formed on the polishing surface 210 are chemical and mechanical according to the first embodiment of the present invention. Since it is the same as in the case of the polishing pad 200, overlapping description thereof will be omitted and the slurry release preventing unit 230 of the polishing pad 200 will be described.

As shown in FIGS. 10A, 10B and 10C, the slurry departure preventing unit 230 may include an outer circumference of the polishing surface 210 to prevent the slurry supplied from the slurry supply unit 140 from escaping to the outside of the polishing surface 210. It is formed along.

The slurry departure preventing unit 230 may be formed by refracting the polishing pad 200 in the direction in which the polishing surface 210 is formed, but this reduces the area of the polishing pad 200 that may be used as the polishing surface 210. Since the slurry separation prevention unit 230 may be manufactured separately and attached along the outer circumference of the polishing pad 200.

For example, the inner side 230a of the slurry separation preventing unit 230 adjacent to the polishing surface 210 may be formed above the polishing surface 210. That is, the angle formed between the polishing surface 210 and the inner side 230a of the slurry separation preventing unit 230 is 0 ° or 180 °, or the slurry separation preventing unit 230 is refracted below the polishing surface 210. Since the separation of the slurry may not be prevented when it exceeds 180 °, the angle θ of the inner surface 230a of the slurry departure preventing part 230 and the polishing surface 210 may be 0 ° ≦ θ <180 °. . In addition, when the slurry departure prevention part 230 is formed to be refracted in the polishing surface 210 direction, the polishing surface 210 may be substantially reduced and may cause inconvenience in polishing. Therefore, for example, the slurry departure prevention part 230 may have an obtuse angle between the inside 230a of the slurry departure prevention part 230 and the polishing surface 210, that is, the inside 230a of the slurry departure prevention part 230. An angle θ formed between one point and the polishing surface 210 may be formed to have a range of 90 ° ≦ θ <180 °.

At this time, the shape of the inner side (230a) of the slurry escape prevention unit 230 is not limited and can be appropriately adjusted in view of the repulsive force against the impact of the slurry, the gravity of the slurry moving along the slurry escape prevention unit 230. In order to uniformly adjust the amount of the slurry to re-enter the polishing surface 210 may be formed in the same shape when the inner side of all the longitudinal cross-section of the slurry escape prevention unit 230 with respect to the polishing surface 210. In addition, the inner side of all the longitudinal cross-section of the slurry escape prevention unit 230 may be formed in a straight line as shown in Figure 10b, but may be formed in a curved line as shown in Figure 11, but is not limited thereto.

The amount of the slurry re-entered by the slurry departure preventing unit 230 may be controlled by the angle and the height of the inner side of the slurry leaving part. When the inner side 230a of the slurry escape preventing unit 230 is adjusted to an angle of about 90 ° with the polishing surface 210, the amount of slurry re-entering the polishing surface 210 may increase. In addition, by increasing the height of the slurry departure prevention unit 230, it is possible to further prevent the slurry from leaving the polishing pad 200 beyond the slurry departure prevention unit 230.

The thickness of the slurry departure preventing unit 230 may be adjusted within a range having mechanical strength that can to some extent resist the impact of the slurry and external impact.

The inner 230a of the slurry escape preventing unit 230 has a physical collision caused by the slurry. When the deformation of the inner 230a of the slurry escape preventing unit 230 occurs due to the physical collision, the slurry re-entry rate is changed to be uniform. You cannot reenter a quantity. In addition, when the inner side 230a of the slurry escape preventing part 230 chemically reacts with the slurry, not only physical changes but also chemical reactants may enter the polishing pad 200 to damage the polishing pad 200 and contaminate the slurry. You can. Therefore, as the material of the inner side 230a of the slurry detachment prevention unit 230, a material having at least high strength with respect to the slurry and capable of resisting chemical deformation may be used. For example, since the polishing surface 210 of the polishing pad 200 satisfies these conditions, the polishing surface 210 may be formed of the same material as that of forming the polishing surface 210 to form the inner side 230a of the slurry escape preventing unit 230. .

The outer side 230b of the slurry dropout prevention unit 230 located on the back surface of the inner side 230a of the slurry escape preventing unit 230 is not the same as the inner side 230a of the slurry escape preventing unit 230 because there is no direct collision with the slurry. It is not necessary to meet the strict conditions, but the shape of the polishing table 111 at the point where the outer side 230b of the slurry release preventing portion 230 is attached to conformally attach the polishing pad to the polishing table, for example, slurry release. It may be formed in the same shape as the inner side (130a) of the prevention wall (130).

Subsequently, with reference to FIG. 12, a slurry release prevention and slurry discharge method in the case of using the chemical mechanical polishing apparatus 100 and the chemical mechanical polishing pad 200 according to an embodiment of the present invention will be described. For convenience of description, the case of the chemical mechanical polishing apparatus 100 according to the first embodiment of the present invention and the chemical mechanical polishing pad 201 according to the second embodiment of the present invention will be described first.

The chemical mechanical polishing pad 201 is mounted on the top surface 110a of the polishing table of the chemical mechanical polishing apparatus 100 according to the first embodiment of the present invention. At this time, the opening 121 of the discharge pipe 120 existing on the upper surface 110a of the polishing table and the discharge hole 222 formed on the lower surface of the polishing pad 200 are aligned to exist on the upper surface of the polishing pad 200. It may be connected to the outlet 122 of the discharge pipe 120 of the polishing table 110 from the discharge hole. For example, if the discharge hole 222 formed on the lower surface of the polishing pad 200 and the opening 121 of the discharge pipe 120 formed on the upper surface 110a of the polishing table have the same size and shape, it is easier to discharge. A discharge path can be formed.

Next, when the slurry is supplied onto the polishing surface 210 of the polishing pad 201 through the slurry supply unit 140 while rotating the polishing table 110, the polishing pad 201 and the polishing head 150 mounted thereto, The slurry moves to the outside of the polishing pad 201 by centrifugal force. When the slurry reaches the rotating polishing head 150, centrifugal force around the axis of the polishing head 150 acts on some of the slurry to move to the outside of the polishing head 150. At this time, a part of the slurry moved to the outside of the polishing head 150 is in the center direction of the polishing pad 201, and part of the slurry is in the outward direction of the polishing pad 201 (the direction in which the slurry release preventing part 230 is formed). Go to. The slurry moved toward the center of the polishing pad 201 flows into the discharge hole 220 formed on the polishing surface 210, in particular, the discharge hole 220 formed in the center of the polishing pad 201 and is connected to the discharge hole 220. It exits through the outlet 122 of 120.

A slurry that does not reach the polishing head 150 and moves further outside the polishing pad 201 or a slurry moved out of the polishing pad 201 by the polishing head 150 is formed on the outer circumference of the polishing pad 201. The slurry separation prevention part 230 is reached. A part of the slurry reaching the slurry escape preventing unit 230 is re-entered into the polishing surface 210 by the repulsive force of the collision with the inner side 230a of the slurry escape preventing unit 230, and a part of the slurry escape preventing unit 230 is The inner surface of the 230a is raised along with the gravity acting to reenter the polishing surface 210. Some of the re-entrant slurry reaches the polishing head 150 and is discharged to the discharge pipe 120 through the discharge hole 220 existing in the center portion of the polishing pad 201 by centrifugal force of the polishing head 150. The process may be performed repeatedly. If necessary, a collection device (not shown) capable of collecting the slurry leaving the slurry separation preventing unit 230 may be provided.

As described above, the process of preventing and discharging the slurry using the chemical mechanical polishing apparatus 100 according to the first embodiment of the present invention and the chemical mechanical polishing pad 201 according to the second embodiment of the present invention has been described. Combination is also possible. That is, as shown in Figure 13, the polishing table 111 of the chemical mechanical polishing apparatus 101 according to the second embodiment of the present invention is the slurry separation preventing wall 130 is formed on the polishing table 111 is the same The process prevents the slurry from falling out and draining. At this time, when the diameter of the polishing pad 200 according to the first embodiment that does not include the slurry separation prevention unit 230 is smaller than the inner diameter of the polishing table 111, the slurry separation prevention wall 130 and the polishing pad 200 An upper surface 110a of the polishing table forming a step with the polishing pad 200 may be exposed between the outer circumferences of the polishing pad 200. Therefore, the slurry moved in the outer circumferential direction of the polishing pad 200 is stagnant on the upper surface 110a of the polishing table, and the amount of the slurry that has collided with the slurry escape preventing wall 130 re-enters into the polishing pad 200 can be reduced. have. In addition, when the diameter of the polishing pad 200 which does not include the slurry escape preventing part 230 is larger than the diameter of the upper surface 111a of the polishing table on which the slurry escape preventing wall 130 is formed, the polishing pad of hard material The 200 may not be conformally mounted to the polishing table 111. However, when the material of the polishing pad 200 is soft and can be conformally mounted according to the shape of the polishing table 111, the slurry separation prevention wall 130 of the polishing table 111 has a diameter larger than that of the polishing table 111. The polishing pad 200 may be bent along the same to function as the slurry release preventing unit 230.

When the chemical mechanical polishing pad 201 according to the second embodiment of the present invention is mounted on the chemical mechanical polishing apparatus 101 according to the second embodiment of the present invention, the polishing table 111 and the polishing pad 201 The upper surface 111a of the polishing table, the lower surface of the slurry release preventing wall 130 and the polishing pad 201, and the outer surface of the slurry release preventing portion 230 may be adjusted to conformally contact. In this case, the slurry release preventing unit 230 may be supported by the slurry release preventing wall 130 of the polishing table 111 to stably contact the polishing pad 201 and the slurry release preventing unit 230.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to the above embodiments but may be manufactured in various forms, and having ordinary skill in the art to which the present invention pertains. It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without changing the technical spirit or essential features of the present invention. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

As described above, the polishing pad included in the chemical mechanical polishing apparatus according to the embodiment of the present invention may improve the efficiency of the chemical mechanical polishing process by reducing the loss of the slurry by reducing the external flow of the slurry.

Claims (7)

A polishing table including at least one slurry discharge pipe penetrating the upper surface and the lower surface; A polishing pad detachably mounted to an upper surface of the polishing table and including at least one slurry discharge hole penetrating the upper surface and the lower surface and communicating with the slurry discharge pipe; A slurry supply unit supplying a slurry to an upper surface of the polishing table; And A polishing head on which a polishing target is mounted on a lower surface facing the polishing pad; , &Lt; / RTI & A slurry separation preventing wall is formed to extend upward along the edge of the polishing table to guide the polishing pad, The polishing table includes a first slurry discharge pipe formed on one side and a second slurry discharge pipe formed on the other side, And the first slurry discharge pipe and the second slurry discharge pipe are connected to each other inside the polishing table. The method of claim 1, The slurry separation prevention portion is formed on the edge of the polishing pad, The slurry separation preventing unit is formed in the upper direction along the edge of the polishing pad is formed chemical mechanical polishing apparatus. 3. The method of claim 2, The slurry separation preventing unit is characterized in that an obtuse angle with the upper surface of the polishing pad. The method of claim 3, The inner surface of the slurry separation prevention portion and the upper surface of the polishing pad is in contact with the chemical mechanical polishing apparatus, characterized in that forming a curved surface. delete delete The method of claim 1, The first slurry discharge pipe and the second slurry discharge pipe, the chemical mechanical polishing apparatus, characterized in that connected to the discharge pipe outlet is formed in the lower portion of the polishing table to discharge the slurry to the outside.

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