CN111897148B - Method for testing short circuit of semiconductor layer of liquid crystal display transistor - Google Patents
Method for testing short circuit of semiconductor layer of liquid crystal display transistor Download PDFInfo
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- CN111897148B CN111897148B CN202010761533.7A CN202010761533A CN111897148B CN 111897148 B CN111897148 B CN 111897148B CN 202010761533 A CN202010761533 A CN 202010761533A CN 111897148 B CN111897148 B CN 111897148B
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- liquid crystal
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
Abstract
The invention discloses a method for testing the short circuit of a semiconductor layer of a liquid crystal display transistor, which initializes a liquid crystal display module, clears the charge of a storage capacitor and scans a gate line by line. According to the invention, the charge of the storage capacitor is emptied, so that the high potential on the gate line is sent to the data line through the position of the short-circuit transistor, the transistors on the data line are charged, and the transistors are enabled to emit light, so that a longitudinal bright line is displayed, the short-circuit leakage problem of the semiconductor layer of the TFT transistor is detected, and the defect of the functionality is realized.
Description
Technical Field
The invention relates to the field of liquid crystal display, in particular to a method for testing the short circuit of a semiconductor layer of a liquid crystal display transistor.
Background
After the liquid crystal display module is produced, the defective functions are required to be selected. The prior art lights up a solid color display and some complex displays (color drawings) by means of progressive scanning to check whether there is a functional defect. The working principle of progressive scanning is as follows: when the first row is scanned, gate1 is electrified, the pixel transistors of the first row are turned on, the IC output voltage charges cst1, then gate1 outputs low level to turn off the pixel transistors, so that gate2, gate3 and the like are displayed row by row until each row of the liquid crystal display module is checked, and whether the liquid crystal display module has functional defects is detected. However, the test mode can light the whole row of pixel transistors, can not detect the defects of bright spots, bright lines and the like caused by short-circuit and electric leakage of the TFT transistors, can not comprehensively detect the liquid crystal display module, and has certain bad hidden trouble.
Accordingly, the prior art has drawbacks and needs improvement.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a method for testing the short circuit of a semiconductor layer of a liquid crystal display transistor.
The technical scheme of the invention is as follows: the method for testing the short circuit of the semiconductor layer of the liquid crystal display transistor comprises the following steps:
step 1: connecting the liquid crystal display module with a testing system, and powering up the testing system;
step 2: the test system sends an instruction to the register through a low-speed mode of the mipi, and initializes the liquid crystal display module;
step 3: discharging the liquid crystal display module, emptying the charge of the storage capacitor of all the transistors, and turning off the Demux switch;
step 4: the test system inputs signals to the GIP circuit through the Driver IC, the GIP circuit controls the gate circuit and sequentially outputs high potential to gate1, gate2 to gate N so as to perform progressive scanning, and in the process, whether the liquid crystal display screen has electric leakage is judged at the same time;
step 5: after the gate line is scanned line by line, an instruction is issued to the liquid crystal display module to enable the liquid crystal display module to enter a sleep mode;
step 6: and powering down the test system, disconnecting the liquid crystal display module from the test system, and completing the test.
Further, the specific step of powering up in the step 1 is as follows: sequentially opening the Iovcc voltage, the VSP voltage and the VSN voltage, and then opening a backlight source of the liquid crystal display module to finish the power-on process of the test system.
Further, the specific step of powering down in the step 7 is as follows: and powering down the VSN voltage, the VSP voltage and the Iovcc voltage in sequence to finish the powering down process of the test system.
Further, in the step 4, when a bright point or a bright line appears on the liquid crystal display screen, it is determined that a short circuit leakage phenomenon exists in a transistor of the liquid crystal display screen; when the liquid crystal display screen is observed to have no bright spots or bright lines, judging that the transistor of the liquid crystal display screen has no short circuit and leakage phenomenon.
Further, the step 1 includes mounting the liquid crystal display to be tested on a test stand in a dark box, and the test stand is electrically connected with the test system.
Further, the two sides of the test support are arranged on the two side walls of the dark box in a sliding rail mode, and a door leaf is arranged on the dark box.
Further, a light sensing element group connected with the testing system is arranged on the display surface of the liquid crystal display screen in the dark box corresponding to the test, an alarm system is arranged on the dark box, and the alarm system comprises a light emitting device and/or a sound emitting device.
Further, the light emitting device is an indicator light, and the sound emitting device is a buzzer.
Further, the step 4 includes: when the light sensing element group detects that light appears on the display surface of the liquid crystal display screen, the test system controls the light emitting device to emit red light for alarming, and/or the test system controls the sound emitting device to emit alarming sound; when the progressive scanning is finished, the light sensing element group does not detect light, the test system controls the light emitting device to emit green light for prompting, and/or the test system controls the sound emitting device to emit prompting sound.
Further, step 4 further includes the step that a tester judges whether the liquid crystal display screen has the electric leakage condition according to the prompt of the alarm system.
By adopting the scheme, the high potential on the gate line is sent to the data line through the position of the short-circuit transistor by emptying the charge of the storage capacitor, and the transistors on the data line are charged to enable the transistors to emit light, so that a longitudinal bright line is displayed, the short-circuit leakage problem of the semiconductor layer of the TFT transistor is detected, and the defect of functional defects is realized.
Drawings
Fig. 1 is a flow chart of a first embodiment of the present invention.
Fig. 2 is a circuit schematic of the present invention.
Fig. 3 is a flow chart of a second embodiment of the present invention.
Detailed Description
The invention will be described in detail below with reference to the drawings and the specific embodiments.
Referring to fig. 1, the invention provides a method for testing a short circuit of a semiconductor layer of a liquid crystal display transistor, comprising the following steps:
step 1: connecting the liquid crystal display module with the testing system, sequentially opening the Iovcc voltage, the VSP voltage and the VSN voltage, and then opening the backlight source of the liquid crystal display module to finish the power-on process of the testing system.
Step 2: and the test system sends an instruction to the register through a low-speed mode of the mipi to initialize the liquid crystal display module.
Step 3: the liquid crystal display module discharges, clears the charge of the storage capacitor of all the transistors, and turns off the Demux switch. Discharging the liquid crystal display module, clearing the capacitance charges of all the transistors, and closing the Demux switch to enable each column of data lines to be in a low-potential state, so that the transistors do not display pictures when the gate line is electrified.
Step 4: the test system inputs signals to the GIP circuit through the Driver IC, the GIP circuit controls the gate circuit and sequentially outputs high potential to gate1, gate2 to gate N so as to scan line by line, and in the process, whether the liquid crystal display screen has electric leakage is judged at the same time. When a bright spot or a bright line appears on the liquid crystal display screen, judging that a transistor of the liquid crystal display screen has a short circuit leakage phenomenon; when the liquid crystal display screen is observed to have no bright spots or bright lines, judging that the transistor of the liquid crystal display screen has no short circuit and leakage phenomenon.
Step 5: after the gate line is scanned line by line, an instruction is issued to the liquid crystal display module to enable the liquid crystal display module to enter a sleep mode.
Step 6: and powering down the VSN voltage, the VSP voltage and the Iovcc voltage in sequence to finish the powering down process of the test system, disconnecting the liquid crystal display module from the test system and finishing the test.
Referring to fig. 2, in the first embodiment of the present invention, when testing is performed, the lcd module is placed on the testing system, and the lcd module is connected to the testing system, and the Iovcc voltage, the VSP voltage and the VSN voltage are sequentially turned on, and then the backlight source of the lcd module is turned on, so as to power up the testing system and the lcd module. Then the test system sends an instruction to the register through the low-speed mode of the mipi, initializes the liquid crystal display module, discharges the liquid crystal display module, clears the capacitance charges of all transistors, and closes the Demux switch, so that each column data is in a low-potential state. The test system inputs signals to the GIP circuit through the Driver IC, and the GIP circuit controls the gate line to sequentially output high potential to each row gate, so that all transistors are turned on. If the transistor semiconductor is short-circuited in the liquid crystal display module, the high potential of the corresponding gate is sent to the data line where the transistor is located from the short-circuited position through the turned-on transistor, and all the transistors on the data line are charged, so that the transistors are lightened to form a bright line. While the storage capacitance of the transistors on the other data lines is cleared of charge, representing a black picture. The tester can judge the position of the short-circuited transistor by observing whether a bright spot or a longitudinal bright line appears on the liquid crystal display module and combining the gate line which is at a high potential when the bright line appears so as to carry out subsequent maintenance and rework. By the method, the leakage defect of the short circuit of the semiconductor layer of the TFT can be effectively detected, and the accuracy and the stability of the test are improved.
Referring to fig. 3, the present invention further provides a second embodiment, in which the step 1 further includes mounting the liquid crystal display to be tested on a test stand in a dark box, and the test stand is electrically connected to the test system. The liquid crystal display screen display device is characterized in that a light sensing element group connected with the testing system is arranged on the display surface of the liquid crystal display screen in the dark box during corresponding testing, an alarm system is arranged on the dark box, and the alarm system comprises a light emitting device and/or a sound emitting device. A closed and dark environment is manufactured through the dark box, so that the light-sensitive element group can detect light rays emitted by the liquid crystal display module, and automatic detection can be realized.
The test support both sides install in with the form of slide rail on the both sides wall of dark case, be equipped with a door leaf on the dark case. The door leaves are closed, so that an external light source is prevented from entering the dark box to influence the detection of the light sensing element group. When the door leaf is opened, test personnel can pull out the test support along the slide rail from the door leaf to be convenient for install the liquid crystal display module that awaits measuring on the test support, improve efficiency of software testing. When closing the door leaf, form dark space in the dark box, can improve the degree of accuracy that light sensing element group detected light.
In this embodiment, the light emitting device is an indicator light, such as an LED light, which has low energy consumption and high brightness; the sounding device is a buzzer.
The step 4 comprises the following steps: when the light sensing element group detects that light appears on the display surface of the liquid crystal display screen, the test system controls the light emitting device to emit red light for alarming, and/or the test system controls the sound emitting device to emit alarming sound; when the progressive scanning is finished, the light sensing element group does not detect light, the test system controls the light emitting device to emit green light for prompting, and/or the test system controls the sound emitting device to emit prompting sound.
And step 4, the step of judging whether the liquid crystal display screen has the electric leakage condition or not by a tester according to the prompt of the alarm system.
When testing, open the door leaf of dark case, pull out the test support along the slide rail from the dark case, install the brilliant display screen of liquid to be tested on the test support, insert test system. After pushing the test support into the dark box, closing the door leaf, sequentially opening the Iovcc voltage, the VSP voltage and the VSN voltage, and then opening the backlight source of the liquid crystal display module to realize the power-on of the test system and the liquid crystal display module. Then the test system sends an instruction to the register through the low-speed mode of the mipi, initializes the liquid crystal display module, discharges the liquid crystal display module, clears the capacitance charges of all transistors, and closes the Demux switch, so that each column data is in a low-potential state. The test system inputs signals to the GIP circuit through the Driver IC, and the GIP circuit controls the gate line to sequentially output high potential to each row gate, so that all transistors are turned on. If the transistor semiconductor is short-circuited in the liquid crystal display module, the high potential of the corresponding gate is sent to the data line where the transistor is located from the short-circuited position through the turned-on transistor, and all the transistors on the data line are charged, so that the transistors are lightened to form a bright line. While the storage capacitance of the transistors on the other data lines is cleared of charge, representing a black picture.
When the light sensing element group corresponding to the display surface of the liquid crystal display screen in the dark box detects light rays emitted by the bright lines on the liquid crystal display screen, a signal is sent to the test system, the light emitting device controlled by the test system emits red light to alarm, and meanwhile, the sound emitting device emits high-frequency alarm sound to prompt a tester that the defect of transistor semiconductor short circuit exists on the liquid crystal display module. If the light sensing element group does not detect light after the progressive scanning is completed and the test system does not receive signals sent by the light sensing element group, the light emitting device controlled by the control system sends out green light to prompt, and meanwhile, the sound emitting device gives out low-frequency prompt sound to prompt a tester that the liquid crystal display module is good, and the defect of transistor semiconductor short circuit does not exist.
In summary, the high potential on the gate line is sent to the data line through the position of the short-circuit transistor by clearing the charge of the storage capacitor, so that the transistors on the column of data lines are charged to emit light, a longitudinal bright line is displayed, the short-circuit leakage problem of the semiconductor layer of the TFT transistor is detected, and the defect of functional defects is realized.
The foregoing description of the preferred embodiment of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (10)
1. The method for testing the short circuit of the semiconductor layer of the liquid crystal display transistor is characterized by comprising the following steps of:
step 1: connecting the liquid crystal display module with a testing system, and powering up the testing system;
step 2: the test system sends an instruction to the register through a low-speed mode of the mipi, and initializes the liquid crystal display module;
step 3: discharging the liquid crystal display module, emptying the charge of the storage capacitor of all the transistors, and turning off the Demux switch;
step 4: the test system inputs signals to the GIP circuit through the Driver IC, the GIP circuit controls the gate circuit and sequentially outputs high potential to gate1, gate2 to gate N so as to perform progressive scanning, and in the process, whether the liquid crystal display screen has electric leakage is judged at the same time;
step 5: after the gate line is scanned line by line, an instruction is issued to the liquid crystal display module to enable the liquid crystal display module to enter a sleep mode;
step 6: and powering down the test system, disconnecting the liquid crystal display module from the test system, and completing the test.
2. The method for testing the short circuit of the semiconductor layer of the liquid crystal display transistor according to claim 1, wherein the specific step of powering up in the step 1 is: sequentially opening the Iovcc voltage, the VSP voltage and the VSN voltage, and then opening a backlight source of the liquid crystal display module to finish the power-on process of the test system.
3. The method for testing the short circuit of the semiconductor layer of the liquid crystal display transistor according to claim 2, wherein the specific step of powering down in the step 6 is as follows: and powering down the VSN voltage, the VSP voltage and the Iovcc voltage in sequence to finish the powering down process of the test system.
4. The method according to claim 1, wherein in the step 4, when a bright point or a bright line appears on the liquid crystal display, it is determined that the transistor of the liquid crystal display has a short-circuit leakage phenomenon; when the liquid crystal display screen is observed to have no bright spots or bright lines, judging that the transistor of the liquid crystal display screen has no short circuit and leakage phenomenon.
5. The method according to claim 1, wherein the step 1 comprises mounting the liquid crystal display to be tested on a test stand in a dark box, the test stand being electrically connected to the test system.
6. The method for testing the semiconductor layer short circuit of the liquid crystal display transistor according to claim 5, wherein two sides of the test stand are arranged on two side walls of the dark box in a sliding rail mode, and a door leaf is arranged on the dark box.
7. The method for testing the short circuit of the semiconductor layer of the liquid crystal display transistor according to claim 5, wherein the display surface of the liquid crystal display screen is provided with a light sensing element group connected with the testing system during the corresponding test in the dark box, and the dark box is provided with an alarm system which comprises a light emitting device and/or a sound emitting device.
8. The method for testing a short circuit of a semiconductor layer of a liquid crystal display transistor according to claim 7, wherein the light emitting device is an indicator lamp and the sound emitting device is a buzzer.
9. The method for testing the shorting of the semiconductor layer of a liquid crystal display transistor according to claim 7, wherein said step 4 comprises: when the light sensing element group detects that light appears on the display surface of the liquid crystal display screen, the test system controls the light emitting device to emit red light for alarming, and/or the test system controls the sound emitting device to emit alarming sound; when the progressive scanning is finished, the light sensing element group does not detect light, the test system controls the light emitting device to emit green light for prompting, and/or the test system controls the sound emitting device to emit prompting sound.
10. The method according to claim 9, wherein the step 4 further comprises the step of the tester judging whether the leakage condition exists in the liquid crystal display according to the prompt of the alarm system.
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| CN202010761533.7A CN111897148B (en) | 2020-07-31 | 2020-07-31 | Method for testing short circuit of semiconductor layer of liquid crystal display transistor |
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| CN202010761533.7A CN111897148B (en) | 2020-07-31 | 2020-07-31 | Method for testing short circuit of semiconductor layer of liquid crystal display transistor |
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| CN111897148B true CN111897148B (en) | 2023-07-18 |
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| JPH0711639B2 (en) * | 1986-04-01 | 1995-02-08 | 松下電器産業株式会社 | Defect inspection method for thin film transistor array |
| JP5924229B2 (en) * | 2012-10-19 | 2016-05-25 | 株式会社デンソー | Rotating electric machine for vehicles |
| CN103454792B (en) * | 2013-08-27 | 2016-04-20 | 北京京东方光电科技有限公司 | The bright spot detection method of liquid crystal panel |
| FR3021823B1 (en) * | 2014-05-27 | 2017-10-20 | Renault Sas | FIELD EFFECT TRANSISTOR AND ASSOCIATED FAILURE DETECTION DEVICE |
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