CN111886197A - 膜层的构图方法、微流控器件及其制作方法 - Google Patents

膜层的构图方法、微流控器件及其制作方法 Download PDF

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CN111886197A
CN111886197A CN201980000016.3A CN201980000016A CN111886197A CN 111886197 A CN111886197 A CN 111886197A CN 201980000016 A CN201980000016 A CN 201980000016A CN 111886197 A CN111886197 A CN 111886197A
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layer
film layer
etching
film
etching barrier
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CN111886197B (zh
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耿越
肖月磊
廖辉
蔡佩芝
李建
吴申康
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BOE Technology Group Co Ltd
Beijing BOE Sensor Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Sensor Technology Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
    • B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
    • B01L3/502707—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by the manufacture of the container or its components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00055—Grooves
    • B81C1/00071—Channels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2200/00—Solutions for specific problems relating to chemical or physical laboratory apparatus
    • B01L2200/12—Specific details about manufacturing devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/12—Specific details about materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2400/00—Moving or stopping fluids
    • B01L2400/08—Regulating or influencing the flow resistance
    • B01L2400/084—Passive control of flow resistance
    • B01L2400/086—Passive control of flow resistance using baffles or other fixed flow obstructions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0133—Wet etching

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Hematology (AREA)
  • Clinical Laboratory Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Health & Medical Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

一种膜层的构图方法，包括：提供具有第一表面(11)的膜层(1)；在膜层(1)的第一表面(11)上形成n个刻蚀阻挡层(21，22)，n为大于等于2的整数；以及利用n个刻蚀阻挡层(21，22)作为掩模对膜层(1)进行n次刻蚀而在第一表面(11)上形成凹陷结构，凹陷结构包括n种深度(h1，h2)不同的底面(1001，102)，所述深度(h1，h2)是在垂直于膜层(1)的方向上从不同底面(1001，102)到第一表面(11)的距离，n次刻蚀中的相邻两次刻蚀包括在前刻蚀和在后刻蚀，在完成在前刻蚀之后，去除n个刻蚀阻挡层(21，22)的一部分以形成在后刻蚀的掩模，其中n个刻蚀阻挡层(21，22)的被去除的部分的材料与在后刻蚀的掩模的材料至少部分不同。该膜层构图方法在满足精度要求的同时，制作工艺简单，生产效率较高。

Description

PCT国内申请，说明书已公开。

Claims (19)

  1. PCT国内申请，权利要求书已公开。
CN201980000016.3A 2019-01-03 2019-01-03 膜层的构图方法、微流控器件及其制作方法 Active CN111886197B (zh)

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PCT/CN2019/070242 WO2020140231A1 (zh) 2019-01-03 2019-01-03 膜层的构图方法、微流控器件及其制作方法

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CN112357878B (zh) * 2020-11-23 2024-04-19 华东师范大学 一种二维材料电子器件及其制备方法和应用

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KR20100079947A (ko) * 2008-12-31 2010-07-08 삼성전자주식회사 반도체 소자의 패턴 형성 방법
US20140030885A1 (en) * 2012-07-30 2014-01-30 Yu-Heng Liu Method for forming dual damascene opening
EP2808297A1 (fr) * 2013-05-28 2014-12-03 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Procédé de réalisation d'une partie suspendue d'une structure microélectronique et/ou nanoélectronique dans une partie monolithique d'un substrat
WO2015059437A1 (en) * 2013-10-23 2015-04-30 Swansea University Manufacture of microneedles
CN104909334A (zh) * 2015-04-17 2015-09-16 上海华虹宏力半导体制造有限公司 Mems器件的制作方法
CN105384145A (zh) * 2015-11-19 2016-03-09 中国科学院微电子研究所 一种内嵌式纳米森林结构及其制备方法
CN105428309A (zh) * 2015-12-16 2016-03-23 华进半导体封装先导技术研发中心有限公司 Tsv通孔的制作工艺方法及多种孔深的盲孔或tsv通孔的制作工艺方法

Family Cites Families (2)

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Publication number Priority date Publication date Assignee Title
US4472240A (en) * 1981-08-21 1984-09-18 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing semiconductor device
US7435676B2 (en) * 2006-01-10 2008-10-14 International Business Machines Corporation Dual damascene process flow enabling minimal ULK film modification and enhanced stack integrity

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100079947A (ko) * 2008-12-31 2010-07-08 삼성전자주식회사 반도체 소자의 패턴 형성 방법
US20140030885A1 (en) * 2012-07-30 2014-01-30 Yu-Heng Liu Method for forming dual damascene opening
EP2808297A1 (fr) * 2013-05-28 2014-12-03 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Procédé de réalisation d'une partie suspendue d'une structure microélectronique et/ou nanoélectronique dans une partie monolithique d'un substrat
WO2015059437A1 (en) * 2013-10-23 2015-04-30 Swansea University Manufacture of microneedles
CN104909334A (zh) * 2015-04-17 2015-09-16 上海华虹宏力半导体制造有限公司 Mems器件的制作方法
CN105384145A (zh) * 2015-11-19 2016-03-09 中国科学院微电子研究所 一种内嵌式纳米森林结构及其制备方法
CN105428309A (zh) * 2015-12-16 2016-03-23 华进半导体封装先导技术研发中心有限公司 Tsv通孔的制作工艺方法及多种孔深的盲孔或tsv通孔的制作工艺方法

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CN111886197B (zh) 2023-04-04
WO2020140231A1 (zh) 2020-07-09
US11731125B2 (en) 2023-08-22

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