CN111883582A - 一种栅极、薄膜晶体管的制作方法和显示面板 - Google Patents

一种栅极、薄膜晶体管的制作方法和显示面板 Download PDF

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CN111883582A
CN111883582A CN202010752766.0A CN202010752766A CN111883582A CN 111883582 A CN111883582 A CN 111883582A CN 202010752766 A CN202010752766 A CN 202010752766A CN 111883582 A CN111883582 A CN 111883582A
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metal film
molybdenum
substrate
preset time
aluminum metal
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CN111883582B (zh
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卓恩宗
夏玉明
李伟
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HKC Co Ltd
Beihai HKC Optoelectronics Technology Co Ltd
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HKC Co Ltd
Beihai HKC Optoelectronics Technology Co Ltd
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  • Thin Film Transistor (AREA)

Abstract

本申请公开了一种栅极、薄膜晶体管的制作方法和显示面板，包括步骤：在衬底上利用物理气相沉积铝金属膜；在铝金属膜上方利用原子层沉积钼金属膜；蚀刻铝金属膜和钼金属膜以形成预设图案的栅极；通过两种不同的方法分别制成两层不同的铝金属膜和钼金属膜作为栅极，所述铝采用物理气相沉积，成膜均匀致密，提高电子的迁移率，增强导电率，所述钼采用原子层沉积技术制成，钼金属膜阶梯覆盖率，沉积的密度均匀，使得导电性较强，同时钼金属膜表面平坦，致密度和平整度较强，对后续制程不会造成残留，提高钼金属膜的界面特性，同时，若用原子层沉积技术制作铝金属膜，所需的时间较长，分开不同的技术方法制程，避免影响产能。

Description

一种栅极、薄膜晶体管的制作方法和显示面板
技术领域
本申请涉及显示技术领域，尤其涉及一种栅极、薄膜晶体管的制作方法和显示面板。
背景技术
TFT-LCD(Thin Film Transistor-Liquid Crystal Display，薄膜晶体管液晶显示屏)是微电子技术与液晶显示器技术巧妙结合的一种技术，其中TFT(Thin FilmTransistor，薄膜晶体管)作为像素的开关，薄膜晶体管打开时，像素的像素电极接收数据线传来的数据电压，与对侧基板的公共电极形成电压差，使得液晶分子发生偏转，显示画面。
随着消费者对于清晰度追求的不断提高，显示面板分辨率的提高使得像素密度(PPI，Pixels Per Inch)不断提高，对应的，每英寸的薄膜晶体管的数量也在不断提高，对于薄膜晶体管的性能的要求也不断提高。因而，如何提供一种兼顾性能和产能的薄膜晶体管成为亟待解决的技术问题。
发明内容
本申请的目的是提供一种栅极、薄膜晶体管的制作方法和显示面板，提高性能和产能。
本申请公开了一种栅极的制作方法,包括步骤：
在衬底上利用物理气相沉积铝金属膜；
在铝金属膜上方利用原子层沉积钼金属膜；以及
蚀刻铝金属膜和钼金属膜以形成预设图案的栅极。
可选的，所述铝金属膜的沉积厚度3500A-4500A。
可选的，所述在铝金属膜上方利用原子层沉积钼金属膜的步骤包括子步骤：
A:将形成有铝金属膜的衬底放置于原子层沉积装置的反应腔室内；
B:在原子层沉积装置中持续通入预设时间的钼前驱体，完成钼前驱体通入后停留预设的时间，通入惰性气体吹扫；
C:在原子层沉积装置中持续通入预设时间的还原气体，完成还原气体通入后停留预设的时间，通入惰性气体吹扫；以及
D:将上述步骤B和C重复执行预设次数以形成钼金属膜。
可选的，所述钼前驱体为六羰基钼、氯化钼、氟化钼中的至少一种；
所述还原气体包括等离子体H2；
所述惰性气体包括氩气和氦气中的至少一种。
可选的，所述钼前驱体的持续通入预设时间均在0.01秒至0.5秒之间，完成钼前驱体通入后停留预设的时间为2-20s；所述还原气体通入预设的时间在0.005秒至0.3秒之间，完成还原气体的通入后停留预设的时间为2-20s；通入惰性气体吹扫的时间为5-30秒之间；所述预设次数为30-1000次。
可选的，所述钼前驱体的通入速率为20sccm，所述钼前驱体和所述还原气体的通入速率相同。
可选的，所述原子层沉积装置的反应腔室内的温度为400-600℃，所述原子层沉积装置的反应腔室内真空度为0.01-0.05托尔。
可选的，所述钼金属膜沉积厚度100A-450A。
本申请还公开了一种薄膜晶体管的制作方法，包括步骤：
S1:通过磁控溅射在衬底上形成铝金属膜；
S2:将形成有铝金属膜的衬底放置于原子层沉积装置的反应腔室内；
S3:在原子层沉积装置中持续通入预设时间的前驱体，完成通入后停留预设的时间，通入惰性气体吹扫；
S4:在原子层沉积装置中持续通入预设时间的还原气体，完成通入后停留预设的时间，通入惰性气体吹扫；
S5:将上述步骤S3和S4重复进行预设次数形成钼金属膜；以及
S6:蚀刻铝金属膜和钼金属膜以形成预设图案的栅极；
S7:在栅极上方依次形成栅极绝缘层、有源层、源漏极和钝化层以形成薄膜晶体管。
本申请还公开了一种显示面板，包括上述所述的薄膜晶体管的制作方法制作得到的薄膜晶体管，所述显示面板还包括第一基板和第二基板，所述第二基板与所述第一基板相对设置；所述第二基板上形成有多个所述薄膜晶体管。
本申请通过两种不同的方法分别制成两层不同的铝金属膜和钼金属膜作为第一金属层，所述铝采用物理气相沉积，成膜均匀致密，提高电子的迁移率，增强导电率，所述钼采用原子层沉积技术制成，钼金属膜阶梯覆盖率，沉积的密度均匀，使得导电性较强，同时钼金属膜层表面平坦，致密度和平整度较强，对后续制程不会造成残留，提高钼金属膜层的界面特性，铝的活跃性强，进而防止铝的扩散，同时，若用原子层沉积技术制作铝金属膜，所需的时间较长，分开不同的技术方法制程，避免影响产能。
附图说明
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。在附图中：
图1是本申请的一实施例的一种显示面板的剖视图；
图2是本申请的一实施例的制作薄膜晶体管方法的流程图；
图3是本申请的一实施例的制作栅极方法的流程图；
图4是本申请的另一实施例的制作栅极方法的流程图。
其中，100、显示面板；110、第一基板；120、第二基板；121、薄膜晶体管；122、栅极；123、绝缘层；124、半导体层；125、金属层；126、钝化层。
具体实施方式
需要理解的是，这里所使用的术语、公开的具体结构和功能细节，仅仅是为了描述具体实施例，是代表性的，但是本申请可以通过许多替换形式来具体实现，不应被解释成仅受限于这里所阐述的实施例。
在本申请的描述中，术语“第一”、“第二”仅用于描述目的，而不能理解为指示相对重要性，或者隐含指明所指示的技术特征的数量。由此，除非另有说明，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征；“多个”的含义是两个或两个以上。术语“包括”及其任何变形，意为不排他的包含，可能存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
另外，“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系的术语，是基于附图所示的方位或相对位置关系描述的，仅是为了便于描述本申请的简化描述，而不是指示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
此外，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，或是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
发明人曾经试验采用PVD((Physical Vapor Deposition，物理气相沉积)技术制作栅极，其中沉积得到的栅极的结构为Mo/Al/Mo或Mo/Al或Al/Mo等层叠结构，发明人研究发现，若多个金属膜层分别采用PVD((Physical Vapor Deposition，物理气相沉积)技术进行沉积，由于金属属性不同等难以调节使得膜层均匀，因此，得到的膜层表面不平坦，造成与下一制程接触不充分，降低导电率；为此，发明人还曾经试验采用ALD(Atomic LayerDeposition，原子层沉积)技术来形成Mo/Al/Mo或Mo/Al或Al/Mo等层叠结构，但是又发现，若多个金属膜层都采用ALD(Atomic Layer Deposition，原子层沉积)技术，由于膜层太厚，特别是其中所需的铝层较厚，使用采用ALD(Atomic Layer Deposition，原子层沉积)技术较浪费时间，降低了生产效率，影响产能。
对此，发明人进行改进得到如下方案：
下面参考附图和可选的实施例对本申请作详细说明。
图1是本申请的一实施例的一种显示面板的剖视图，本申请实施例公布了一种显示面板100，所述显示面板100包括：第一基板110和第二基板120，所述第一基板110与所述第二基板120相对设置，所述第二基板120上形成薄膜晶体管121，所述薄膜晶体管121包括栅极122、绝缘层123、半导体层124、源漏极125和钝化层126。
图2是本申请的一实施例的薄膜晶体管的制作方法的流程图；所述薄膜晶体管的制作方法，包括步骤：
S1：提供第二基板；
S2：在第二基板上利用物理气相沉积铝金属膜；
S3：在铝金属膜上方利用原子层沉积钼金属膜；
S4：蚀刻铝金属膜和钼金属膜以形成预设图案的栅极；
S5：在栅极上形成绝缘层；
S6：在绝缘层上形成半导体层；
S7：在半导体层形成源漏极；
S8：在源漏极上形成钝化层以得到薄膜晶体管。
其中，所述栅极由下层的铝和上层的钼组合而成，所述铝采用PVD((PhysicalVapor Deposition，物理气相沉积)技术，在真空条件下，将材料源——固体或液体表面气化成气态原子、分子或部分电离成离子，并通过低压气体(或等离子体)过程，制备过程简单，耗材少，成膜均匀致密，铝作为栅极的主体，保证了导电率，减少RC延迟时间，提高了传输能力；而钼金属膜形成在铝金属膜上方，鉴于ALD技术是一种特殊的化学气相沉积技术，是通过将气相前驱体脉冲交替通入反应室并在沉积基体表面发生化学吸附反应形成薄膜的一种方法，ALD沉积的膜层的均匀性、致密性、阶梯覆盖率以及厚度控制等方面都具有明显的优势，如此，改善了铝凸起的问题，使得栅极的整体的平整度得到了保证，提高了膜质，而且，栅极仅部分采用耗时较大的原子层沉积技术，可以在保证膜质的同时，减少生产时间，提高生产效率。其次，由于铝的活跃性比钼强，设置钼金属膜覆盖在铝金属膜上，可以防止铝金属膜被氧化，而且钼金属膜层相当于形成一层所需要的保护层，将保护层下的铝金属膜与空气隔开，防止铝扩散的问题，避免铝金属的导电性受到影响。
其中，该源漏极也可以采用本申请PVD形成铝金属膜，通过ALD形成钼金属膜的层叠结构；甚至，还可以是钼/铝/钼的层叠结构，其中位于下层的钼金属膜可以采用ALD也可以采用PVD。采用PVD可以提高生产效率，而且位于下层的话，并不太影响栅极的平整度和膜质。
具体的，所述绝缘层为栅极绝缘层，半导体层为有源层和欧姆接触层。
进一步的，图3是本申请的一实施例的制作栅极方法的流程图，在所述衬底上利用物理气相沉积铝金属膜S2，更具体的，在衬底上通过磁控溅射在衬底上形成铝金属膜的步骤包括子步骤：
S21:将铝源放置于物理气相沉积装置的反应室内；
S22:通入电源，使铝粒子获得能量并使用氩气轰击靶材表面；
S23:低压下，将铝粒子溅射到基板上，形成铝金属膜。
采用磁控溅射的物理气相沉积技术沉积铝金属膜时，磁控溅射就是在靶材背面增加了磁铁的溅射方式，就是一个持续放电的过程，电源通常有直流电源、射频电源、直流脉冲电源和中频电源，磁控溅射一般采用直流或者是交流溅射，在溅射中一般会用氩气作为溅射气体，当然还可以通入氧气和水蒸气来控制沉积的铝金属膜的性能，低气压，确保了铝粒子的自由行程长，碰撞的几率高增加，电离度高，提高了靶电流的密度，工作电压也随之降低，进而金属薄膜铝的沉积速率高，在低气压下溅射原子被散射的几率也减小了，同时也可以提高铝金属膜的纯度，提高铝金属膜的质量，进而提高电子迁移率，此溅射成膜均匀性好，更好的满足大规模化的生产要求，提高产能。当然，还可以采用其他方式形成该铝金属膜。
其中，所述铝金属层的沉积厚度3500A-4500A，铝金属膜作为导电的导体，铝的导电性相对于钼的导电性来说，较强，这使得铝的电子迁移率比钼的电力迁移率高，铝的厚度为3500A-4500A比钼的厚度较厚，在保障栅极的平整度和膜质的同时，保障了栅极的导电性。
进一步的，图4是本申请的另一实施例的制作栅极方法的流程图，在铝金属膜上方利用原子层沉积钼金属膜S3的子步骤包括：
A：将形成有铝金属膜的衬底放置于原子层沉积装置的反应腔室内；
B：在原子层沉积装置中持续通入预设时间的钼前驱体，完成钼前驱体通入后停留预设的时间，通入惰性气体吹扫；
C：在原子层沉积装置中持续通入预设时间的还原气体，完成还原气体通入后停留预设的时间，通入惰性气体吹扫；以及
D：将上述步骤B和C重复执行预设次数以形成钼金属膜。
由于对顶层钼金属膜的要求，导电性要好，而且为了减小对下一制程的影响，表面要求平整，即选择了原子层沉积的方法，用原子层沉积装置对钼源进行加工，将钼源前驱体通入，形成一层所需要的Mo(CO)6(六羰基钼)，再将每个前驱体反应的步骤重复进行，最后再将全部步骤重复进行，使各个前驱体中所需的原子掺杂得更加均匀，沉积的每层均匀致密，提高电子迁移率。
其中，所述钼金属膜的沉积厚度100A-450A，所述前驱体为钼前驱体，材料包括六羰基钼、氯化钼、氟化钼中的至少一种；
所述还原气体包括等离子体H2(氢气)；
所述惰性气体包括氩气和氦气中的至少一种；
所述钼前驱体持续通入预设时间均在0.01秒至0.5秒之间，完成后通入后停留预设的时间为2-20s，还原气体通入预设的时间在0.005秒至0.3秒之间，吹扫的时间为5-30秒之间。在1-6秒之间；所述预设的循环次数为30-1000次，以此通入时间、停留时间来沉积各原子，各种原子沉积的步骤中都循环进行多次，使各钼原子在沉积的面上分布得更加均匀，最后再将所有步骤再循环进行多次，就相当于将加工的膜层分成多层来沉积，一层一层的堆积起来，使得各钼原子在厚度方向上分布得更加均匀，使加工生成的钼金属膜层的致密均匀，导电性更好,当然，预设的循环次数可为50次，在此次数内可以减少时间提高产能。进一步的，还原气体H2(氢气)将钼前驱体还原为钼单质，还原气体还可也为CO(一氧化碳)等。
具体的，所述钼前驱体的通入速率为20sccm，所述钼前驱体和所述还原气体的通入速率相同，通入速率相同，沉积稳定性较强，不会因为通入不同的速率的气体，造成不同层之间密度不均匀，钼金属膜的质量下降，影响钼金属膜的均匀性和致密性，进一步提高钼金属膜的均匀性和稳定性。
更为具体的，所述原子层沉积装置的反应腔室内的温度为400-600℃，所述原子层沉积装置的反应腔室内真空度为0.01-0.05torr。在此温度范围内，沉积率较高，低于或高于此温度范围会影响沉积的致密性，原子的排布疏密，影响金属膜的致密性；我们可以通过控制各个循环次数来制备各种物质，如表1所示：
表1：原子层沉积装置加工的程序流程表
序号 程序 配方 时间(s)
1 Mo(钼源)前驱体(Dosel) Mo(CO)6 0.02
2 停留时间1(Reacitonl) Mo(CO)6停留时间 5
3 吹扫1(Purgel) Ar吹扫 10
4 还原气体(Dose2) 等离子体H2 0.02
5 停留时间2(Reaciton2) 等离子体H2停留时间 5
6 吹扫2(Purge2) Ar吹扫 10
7 总循环数(Gotol) 50次
8 结束(End)
需要说明的是，本方案中涉及到的各步骤的限定，在不影响具体方案实施的前提下，并不认定为对步骤先后顺序做出限定，写在前面的步骤可以是在先执行的，也可以是在后执行的，甚至也可以是同时执行的，只要能实施本方案，都应当视为属于本申请的保护范围。
本申请的技术方案可以广泛用于各种显示面板，如TN(Twisted Nematic，扭曲向列型)显示面板、IPS(In-Plane Switching，平面转换型)显示面板、VA(VerticalAlignment，垂直配向型)显示面板、MVA(Multi-Domain Vertical Alignment，多象限垂直配向型)显示面板，当然，也可以是其他类型的显示面板，如OLED(Organic Light-EmittingDiode，有机发光二极管)显示面板，均可适用上述方案。
以上内容是结合具体的可选实施方式对本申请所作的进一步详细说明，不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本申请的保护范围。

Claims (10)

1.一种栅极的制作方法，其特征在于，包括步骤：
在衬底上利用物理气相沉积铝金属膜；
在铝金属膜上方利用原子层沉积钼金属膜；以及
蚀刻铝金属膜和钼金属膜以形成预设图案的栅极。
2.如权利要求2所述的一种栅极的制作方法，其特征在于，所述铝金属膜的沉积厚度3500A-4500A。
3.如权利要求1所述的一种栅极的制作方法，其特征在于，所述在铝金属膜上方利用原子层沉积钼金属膜的步骤包括子步骤：
A：将形成有铝金属膜的衬底放置于原子层沉积装置的反应腔室内；
B：在原子层沉积装置中持续通入预设时间的钼前驱体，完成钼前驱体通入后停留预设的时间，通入惰性气体吹扫；
C：在原子层沉积装置中持续通入预设时间的还原气体，完成还原气体通入后停留预设的时间，通入惰性气体吹扫；以及
D：将上述步骤B和C重复执行预设次数以形成钼金属膜。
4.如权利要求3所述的一种栅极的制作方法，其特征在于，所述钼前驱体为六羰基钼、氯化钼、氟化钼中的至少一种；
所述还原气体包括等离子体H2；
所述惰性气体包括氩气和氦气中的至少一种。
5.如权利要求3所述的一种薄膜晶体管的栅极的制作方法，其特征在于，所述钼前驱体的持续通入预设时间均在0.01秒至0.5秒之间，完成钼前驱体通入后停留预设的时间为2-20s；所述还原气体通入预设的时间在0.005秒至0.3秒之间，完成还原气体的通入后停留预设的时间为2-20s；通入惰性气体吹扫的时间为5-30秒之间；所述预设次数为30-1000次。
6.如权利要求5所述的一种栅极的制作方法，其特征在于，所述钼前驱体的通入速率为20sccm，所述钼前驱体和所述还原气体的通入速率相同。
7.如权利要求3所述的一种栅极的制作方法，其特征在于，所述原子层沉积装置的反应腔室内的温度为400-600℃，所述原子层沉积装置的反应腔室内真空度为0.01-0.05托尔。
8.如权利要求4所述的一种栅极的制作方法，其特征在于，所述钼金属膜沉积厚度100A-450A。
9.一种薄膜晶体管的制作方法，其特征在于，包括步骤：
S1:通过磁控溅射在衬底上形成铝金属膜；
S2:将形成有铝金属膜的衬底放置于原子层沉积装置的反应腔室内；
S3:在原子层沉积装置中持续通入预设时间的前驱体，完成通入后停留预设的时间，通入惰性气体吹扫；
S4:在原子层沉积装置中持续通入预设时间的还原气体，完成通入后停留预设的时间，通入惰性气体吹扫；以及
S5:将上述步骤S3和S4重复进行预设次数形成钼金属膜；
S6:蚀刻铝金属膜和钼金属膜以形成预设图案的栅极；
S7:在栅极上方依次形成绝缘层、半导体层、源漏极和钝化层以形成薄膜晶体管。
10.一种显示面板，包括如权利要求1-9任意一项所述的薄膜晶体管的制作方法制作得到的薄膜晶体管，其特征在于，所述显示面板包括：
第一基板，
第二基板，与所述第一基板相对设置；
所述第二基板上形成有多个所述薄膜晶体管。
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