CN111850679B - Semiconductor-level straight-pulling re-casting cylinder - Google Patents
Semiconductor-level straight-pulling re-casting cylinder Download PDFInfo
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- CN111850679B CN111850679B CN202010818389.6A CN202010818389A CN111850679B CN 111850679 B CN111850679 B CN 111850679B CN 202010818389 A CN202010818389 A CN 202010818389A CN 111850679 B CN111850679 B CN 111850679B
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- 238000005266 casting Methods 0.000 title claims abstract description 74
- 239000004065 semiconductor Substances 0.000 title claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 106
- 239000010453 quartz Substances 0.000 claims abstract description 100
- 239000002210 silicon-based material Substances 0.000 claims abstract description 61
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 21
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims 3
- 239000013078 crystal Substances 0.000 abstract description 11
- 230000002035 prolonged effect Effects 0.000 abstract description 8
- 238000002360 preparation method Methods 0.000 abstract description 4
- 230000003139 buffering effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000006004 Quartz sand Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000010432 diamond Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000979 retarding effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a semiconductor-grade straight-pull re-throwing barrel, which comprises a barrel body, a molybdenum rod and a main quartz umbrella arranged at the lower end of the barrel body, wherein an auxiliary quartz umbrella is arranged on the molybdenum rod and above the main quartz umbrella; the main quartz umbrella is also provided with a quartz cylinder which is used for isolating the molybdenum rod and the silicon material and penetrates through the auxiliary quartz umbrella; the upper end face of the cylinder body is provided with a positioning component for adjusting the lifting positions of the main quartz umbrella and the auxiliary quartz umbrella. According to the invention, the re-feeding barrel is used for buffering the falling speed of the silicon material, reducing the impact of the silicon material on the main quartz umbrella and reducing the splash risk of the silicon material; fixing the descending distance to adjust the opening height and the blanking speed of the re-throwing barrel; the molybdenum rod is prevented from directly contacting with the silicon material, the purity of the silicon material entering the re-casting cylinder is ensured, and the quality of the Czochralski single crystal is improved; the strength of the re-casting cylinder is improved, the service life of the re-casting cylinder is prolonged, and the preparation cost of the re-casting cylinder is reduced.
Description
Technical Field
The invention belongs to the technical field of semiconductor Czochralski crystal auxiliary equipment, and particularly relates to a semiconductor-grade Czochralski compound casting cylinder.
Background
In the preparation process of the semiconductor grade single crystal, the re-casting cylinder is a common important casting tool, and the structure of the re-casting cylinder directly influences the casting quantity and drawing quality of the silicon material. The Chinese published patent CN210636091U proposes a novel re-casting device for Czochralski single crystal, which comprises a re-casting cylinder, dan Yingsan and a fixing frame, wherein the re-casting cylinder is of a structure with a wide upper part and a narrow lower part, and the re-casting cylinder of the structure has the following problems:
First,: for the Dan Yingsan arranged at the lower end of the re-throwing barrel, the impact force of the falling silicon material is large, the bottom impact force of the quartz umbrella is large, and the re-throwing material is driven to rotate during discharging, so that the silicon material is increased in silicon splashing risk after falling into the liquid level of the silicon material.
Secondly: meanwhile, as the molybdenum rod is used as the pull rod to operate the quartz umbrella, the silicon material is easy to be polluted by molybdenum metal, the technical parameters of the semiconductor grade monocrystalline silicon are seriously influenced, and the quartz umbrella cannot be applied to the re-casting of the semiconductor grade monocrystalline silicon; and the upper end surface of the re-throwing barrel is not foolproof, so that potential safety hazards exist when the umbrella is re-thrown.
Also: the transition structure between the middle second cylinder part and the lower third cylinder part in the structure is a cross-section plane, and the part, which is close to the outer wall of the upper end surface of the third cylinder part, is easy to generate stress concentration, so that the joint of the third cylinder part and the second cylinder part of the re-casting cylinder is not strong enough, cracks are easy to occur, and the service life of the re-casting cylinder is seriously influenced.
Finally: the integral manufacturing cost of the re-casting cylinder with the structure is high, the use frequency is high, and once any quality appears, the whole re-casting cylinder needs to be replaced, so that the processing cost is increased.
Therefore, how to design a re-casting cylinder suitable for re-casting of semiconductor grade single crystals solves the technical problems that the re-casting cylinder in the prior art is easy to splash silicon, pollute silicon materials and has short service life, and is a key for improving re-casting efficiency, ensuring re-casting quality and reducing processing cost.
Disclosure of Invention
The invention provides a semiconductor-grade straight-pull re-casting cylinder, which solves the technical problems that the re-casting cylinder in the prior art is easy to splash silicon, pollute silicon materials and has short service life.
In order to solve the technical problems, the invention adopts the following technical scheme:
The semiconductor-level straight-pulling re-throwing barrel comprises a barrel body, a molybdenum rod and a main quartz umbrella arranged at the lower end of the barrel body, wherein an auxiliary quartz umbrella is arranged on the molybdenum rod and above the main quartz umbrella; the main quartz umbrella is also provided with a quartz cylinder which is used for isolating the molybdenum rod and the silicon material and penetrates through the auxiliary quartz umbrella; the upper end face of the cylinder body is provided with a positioning component for adjusting the lifting positions of the main quartz umbrella and the auxiliary quartz umbrella.
Further, the cylinder body is of a double-layer structure and comprises an outer cylinder and an inner cylinder matched with the inner wall of the outer cylinder, and the thickness of the inner cylinder is 1/4-1/3 of that of the outer cylinder.
Further, the lower end face of the inner layer cylinder is fixedly embedded in a clamping groove arranged on the inner wall of the outer layer cylinder, and the clamping groove is close to one end of the main Dan Yingsan and is 100-200mm away from the lower end face of the outer layer cylinder.
Further, the thickness of the outer layer cylinder is 10-20mm.
Further, the auxiliary quartz umbrella is arranged at one end of the lower section of the cylinder body far away from the main quartz umbrella, and the auxiliary quartz umbrella is positioned at 1/4-3/4 of the position height of the lower flange table arranged on the outer wall of the cylinder body.
Furthermore, the auxiliary quartz umbrella is of a truncated cone-shaped structure, the large-diameter end of the auxiliary quartz umbrella is arranged close to one side of the main quartz umbrella, and the bus angle of the auxiliary quartz umbrella is 30-60 degrees.
Further, the diameter of the large diameter end of the pair Dan Yingsan is 1/3-1/2 of the inner diameter of the inner layer cylinder.
Furthermore, the variable diameter cross section of the joint of the outer layer cylinder and the lower flange table is of a diamond structure.
Further, the positioning assembly comprises a positioning plate and symmetrically arranged limiting bolts, the limiting bolts are arranged at two ends of the diameter of the upper flange table on the upper end face of the outer wall of the cylinder body, and the two ends of the limiting bolts are respectively connected with the positioning plate and the upper flange table; the upper end face of the quartz cylinder is connected with the positioning plate.
Further, a plurality of support rods which are uniformly arranged are arranged between the upper flange table and the lower flange table.
Compared with the prior art, the re-throwing barrel designed by the invention is adopted to buffer the falling speed of the silicon material, reduce the impact of the silicon material on the main quartz umbrella and reduce the splash risk of the silicon material; fixing the descending distance to adjust the opening height and the blanking speed of the re-throwing barrel; the molybdenum rod is prevented from directly contacting with the silicon material, the purity of the silicon material entering the re-casting cylinder is ensured, and the quality of the Czochralski single crystal is improved; the strength of the re-casting cylinder is improved, the service life of the re-casting cylinder is prolonged, and the preparation cost of the re-casting cylinder is reduced.
Drawings
FIG. 1 is a schematic diagram of a semiconductor grade Czochralski re-casting drum according to an embodiment of the present invention;
FIG. 2 is a schematic view of the structure of a secondary quartz umbrella according to an embodiment of the invention.
In the figure:
100. barrel body 110, outer barrel 120, and inner barrel
130. Clamping groove 200, molybdenum rod 300 and main Dan Yingsan
400. Auxiliary quartz umbrella 500, quartz cylinder 600 and positioning assembly
610. Positioning plate 620, limit bolt 700 and upper flange table
800. Lower flange 900 and support bar
Detailed Description
The invention will now be described in detail with reference to the drawings and specific examples.
The embodiment provides a semiconductor-level straight-pull re-casting cylinder, as shown in fig. 1, comprising a cylinder body 100, a molybdenum rod 200 and a main Dan Yingsan and a secondary quartz umbrella 400, wherein the main Dan Yingsan is arranged at the lower end of the cylinder body 100, and the secondary quartz umbrella 400 is arranged on the molybdenum rod 200 and is positioned right above the main quartz umbrella 300; the main quartz umbrella 300 is also provided with a quartz cylinder 500 which is used for isolating the molybdenum rod 200 and the silicon material and penetrates through the auxiliary quartz umbrella 400; the upper end surface of the cylinder body 100 is provided with a positioning assembly 600 for adjusting the lifting position of the main quartz umbrella 300 and the auxiliary quartz umbrella 400.
Specifically, the barrel body 100 is of a double-layer structure, and includes an outer barrel 110 and an inner barrel 120 adapted to the inner wall of the outer barrel 110, wherein the outer barrel 110 and the inner barrel 120 are both barrels of a variable diameter structure, a structure with a wide upper part and a narrow lower part is adopted, and the connection cross section of the variable diameter part is of a diamond structure, that is, the connection cross section of the outer barrel 110 and the lower flange 800 arranged at the variable diameter part of the outer barrel 110 is of a diamond structure. The connection strength of the variable diameter parts of the upper section and the lower section can be improved, the stress concentration is reduced, and the fixing strength of the lower flange table 800 is improved at the same time, so that the stability of placing the re-casting cylinder at the furnace mouth of the single crystal furnace is improved, and the service time of the re-casting cylinder is prolonged.
In this embodiment, the thickness of the outer layer cylinder 110 is 10-20mm, and the thickness of the inner layer cylinder 120 is 1/4-1/3 of the thickness of the outer layer cylinder 110; and the outer layer cylinder 110 is a common quartz sand layer; the inner cylinder 120 is a high purity quartz sand layer. This is because, when the thickness of the inner layer cylinder 120 is less than 1/4 of the thickness of the outer layer cylinder 110, the thickness of the inner layer cylinder 120 is thin, the strength is insufficient, the breakage is easy, and the risk of breakage is increased; if the thickness of the inner layer cylinder 120 is greater than 1/3 of the thickness of the outer layer cylinder 110, the thickness of the inner layer cylinder 120 is increased, the overall weight of the re-casting cylinder is increased, the inner layer cylinder 120 is inconvenient to install and replace, the diameter of the inner wall of the inner layer cylinder 120 is reduced, and the bearing weight of the overall silicon material is reduced. Preferably, when the thickness of the inner layer cylinder 120 is 1/4 to 1/3 of the thickness of the outer layer cylinder 110, the mechanical strength of the inner layer cylinder 120 and the convenience of installation are all in an optimal state.
Further, the lower end surface of the inner layer cylinder 120 is embedded and fixed in a clamping groove 130 arranged on the inner wall of the outer layer cylinder 110, the structure of the clamping groove 130 is matched with the lower end surface of the inner layer cylinder 120, and the clamping groove 130 is arranged close to one end of the main quartz umbrella 300 and is 100-200mm away from the lower end surface of the outer layer cylinder 110. The position of the clamping groove 130 does not interfere with the position of the upper end face of the main quartz umbrella 300, and is not staggered from the lowest descending position of the auxiliary quartz umbrella 400 by a certain distance, so that the descending of the silicon material is not influenced.
The double casting cylinder with the double layer structure has the advantages that the double casting cylinder with the double layer structure is formed by combining the outer layer cylinder 110 made of common quartz sand and the inner layer cylinder 120 made of high-purity quartz sand, so that the production cost of the double casting cylinder is greatly reduced, the weight of the double casting silicon material is ensured, and meanwhile, the service time of the double casting cylinder is prolonged. The structure not only saves the use of the preparation materials of the re-casting cylinder, but also reduces the manufacturing cost of the whole re-casting cylinder by about 2/3 compared with the conventional re-casting cylinder, namely the cost for manufacturing the re-casting cylinder with the double-layer structure is about 1/3 of the production cost of the conventional re-casting cylinder.
In order to be convenient for fixing at the furnace mouth of the single crystal furnace during the blanking of the double casting cylinder, an upper flange table 700 and a lower flange table 800 are respectively arranged on the upper end surface and the reducing part of the outer layer cylinder 110, and a plurality of support rods 900 are also arranged between the upper flange table 700 and the lower flange table 800, preferably four support rods 900 are arranged. The supporting rods 900 arranged between the upper flange table 700 and the lower flange table 800 are matched with the positioning assembly 600, so that the integral strength of the re-casting cylinder is enhanced, the frequency of shaking of the re-casting cylinder under impact is reduced, the risk of cracking in the use process of the re-casting cylinder is also reduced, and the service life of the re-casting cylinder is prolonged.
As shown in fig. 2, the auxiliary quartz umbrella 400 is disposed at one end of the lower section of the inner tube 120 far from the main quartz umbrella 300, and the auxiliary quartz umbrella 400 is located at 1/4-3/4 of the height of the lower flange 800 disposed at the outer wall of the tube body 100, that is, the height of the auxiliary quartz umbrella 400 is 1/4-3/4 of the height of the lower flange 800 from the lower end surface of the tube body 100. This is because when the height of the sub-quartz umbrella 400 is less than 1/4 of the height of the lower flange 800 from the lower end surface of the cylinder body 100, the silicon material is easily accumulated near the reducing junction, and a blocking material is generated, which is unfavorable for the silicon material to drop, and at this time, the sub-quartz umbrella 400 is too large from the main quartz umbrella 300, and the effect of slowing down the silicon material drop rate cannot be achieved under the action of gravity. When the height of the auxiliary quartz umbrella 400 is greater than 3/4 of the height of the lower flange 800 from the lower end surface of the cylinder body 100, the gap between the auxiliary quartz umbrella 400 and the clamping groove 130 is reduced when the auxiliary quartz umbrella 400 descends, and clamping materials or silicon materials are easy to collect. Therefore, preferably, the height of the auxiliary quartz umbrella 400 is 1/4-3/4 of the height of the lower flange 800 from the lower end surface of the cylinder body 100, so that the silicon material can be reduced in speed and lowered, the impact force of the silicon material on the main quartz umbrella 300 is reduced, the phenomenon that the re-casting silicon material is driven to rotate by the main quartz umbrella 300 is avoided, and the silicon splashing risk of the silicon material after falling into the liquid surface of the silicon material can be reduced to the greatest extent.
Further, the auxiliary quartz umbrella 400 has a truncated cone-shaped structure, the large diameter end of the auxiliary quartz umbrella 400 is arranged close to one side of the main quartz umbrella 300, and the bus angle theta of the auxiliary quartz umbrella 400 is 30-60 degrees. This is because, when the bus angle θ of the sub-quartz umbrella 400 is less than 30 °, the sub-quartz umbrella 400 cannot play a role in retarding the falling speed of the silicon material; when the bus angle θ of the sub-quartz umbrella 400 is greater than 60 °, the sub-quartz umbrella 400 is likely to cause jamming.
The diameter of the large diameter end of the auxiliary quartz umbrella 400 is 1/3-1/2 of the inner diameter of the inner layer cylinder 120, because if the diameter of the auxiliary quartz umbrella 400 is too small, the effect of slowing down the blanking speed of the silicon material can not be achieved; if the size is too large, the blocking phenomenon is easy to occur. Preferably, when the diameter of the large diameter end of the auxiliary quartz umbrella 400 is in the range of 1/3-1/2 of the inner diameter of the inner barrel 120, not only the speed of blanking the silicon material can be slowed down, but also dust generated by the rapid drop of the silicon material can be reduced, so that the primary crystallization rate and the rod-setting rate of single crystals are improved, and the double-casting and non-double-casting indexes are consistent. Meanwhile, the auxiliary quartz umbrella 400 with the structure has small particle size because the semiconductor-level re-used silicon material is intersected with the solar-level re-used silicon material, and the material clamping phenomenon can not occur during blanking.
Further, the positioning assembly 600 includes a positioning plate 610 and symmetrically disposed stop pins 620, the stop pins 620 are disposed at two ends of the diameter of the upper flange 700 on the upper end surface of the outer wall of the cylinder body 100, two ends of the stop pins 620 are detachably connected with the positioning plate 610 and the upper flange 700, and the upper end surface of the quartz cylinder 500 is fixedly connected to the positioning plate 610. The positioning assembly 600 can further limit the lowest descending position of the main quartz umbrella 300, not only can fix the descending distance of the main quartz umbrella 300, but also can determine the opening height of the re-casting cylinder so as to adjust the falling speed and the falling flow direction of the silicon material, thereby being beneficial to stably and uniformly falling the silicon material into the quartz crucible, reducing the splashing of the silicon material and ensuring the crystal pulling quality.
1. By adopting the re-throwing barrel designed by the invention, the auxiliary quartz umbrella is arranged, so that the silicon material can be slowed down and lowered, the impact force of the silicon material on the main quartz umbrella is reduced, the re-throwing silicon material is prevented from being driven to rotate by the main quartz umbrella, and the silicon splashing risk of the silicon material after falling into the liquid level of the silicon material can be reduced to the greatest extent. Because the semiconductor-grade re-used silicon material is intersected with the solar-grade re-used silicon material, the particle size is small, and the silicon material is not blocked by the arrangement of the auxiliary quartz umbrella during blanking.
2. The quartz cylinder is arranged to isolate the molybdenum rod, so that the molybdenum rod is prevented from directly contacting with the silicon material, the silicon material is reduced to be contaminated by metal, and the purity of the silicon material is ensured; in order to ensure that the molybdenum rod can freely pull the main quartz umbrella and ensure that the auxiliary quartz umbrella and the main quartz umbrella move up and down together, a gap is arranged between the molybdenum rod and the quartz cylinder, the structure can relieve friction and impact of silicon materials on the inner wall of the inner layer cylinder, increase the swinging movable space of the silicon materials in the inner layer cylinder, further improve the fluxion of the silicon materials and reduce the silicon material accumulation or clamping.
3. The setting of locating component can further limit the minimum position that main quartz umbrella descends, not only can fix the decline distance of main quartz umbrella, can decide to throw a section of thick bamboo again and open the umbrella height moreover to adjust silicon material falling speed and whereabouts flow direction, be favorable to the silicon material to stably even whereabouts to the quartz crucible in, reduce silicon material and splash. The positioning component is matched with the supporting rod arranged between the upper flange table and the lower flange table, so that the integral strength of the re-casting cylinder is enhanced, the frequency of shaking generated under the impact of the re-casting cylinder is reduced, the risk of cracking in the use process of the re-casting cylinder is also reduced, and the service life of the re-casting cylinder is prolonged.
4. Meanwhile, the connecting surface with the cross section of the diamond structure is arranged at the connecting position of the upper section and the lower section of the re-casting barrel, so that the connecting strength of the upper section and the lower section of the reducing position can be further improved, the stress concentration is reduced, and the fixing strength of the lower flange table is improved, so that the stability of the re-casting barrel in the furnace table opening of the single crystal furnace is improved, and the service time of the re-casting barrel is prolonged.
5. The double-layer double-casting cylinder has the advantages that the double-layer double-casting cylinder is formed by combining the outer cylinder made of common quartz sand and the inner cylinder made of high-purity quartz sand, so that the production cost of the double-layer double-casting cylinder is reduced, the weight of the double-casting silicon material is ensured, and the service time of the double-layer double-casting cylinder is prolonged; the cost for manufacturing the re-casting cylinder with the structure is about 1/3 of the production cost of the existing re-casting cylinder.
The foregoing detailed description of the embodiments of the invention has been presented only to illustrate the preferred embodiments of the invention and should not be taken as limiting the scope of the invention. All equivalent changes and modifications within the scope of the present invention are intended to be covered by the present invention.
Claims (7)
1. The semiconductor-level straight-pulling re-throwing barrel comprises a barrel body, a molybdenum rod and a main quartz umbrella arranged at the lower end of the barrel body, and is characterized in that an auxiliary quartz umbrella is arranged on the molybdenum rod and above the main quartz umbrella; the main quartz umbrella is also provided with a quartz cylinder which is used for isolating the molybdenum rod and the silicon material and penetrates through the auxiliary quartz umbrella; the upper end face of the cylinder body is provided with a positioning assembly for adjusting the lifting positions of the main quartz umbrella and the auxiliary quartz umbrella;
the auxiliary quartz umbrella is arranged at one end of the lower section of the cylinder body far away from the main quartz umbrella, and the height of the auxiliary quartz umbrella is 1/4-3/4 of the height of the lower flange table of the outer wall of the cylinder body from the lower end surface of the cylinder body;
the auxiliary quartz umbrella is of a truncated cone-shaped structure, the large-diameter end of the auxiliary quartz umbrella is arranged close to one side of the main quartz umbrella, and the angle of a bus of the auxiliary quartz umbrella is 30-60 degrees;
the diameter of the large diameter end of the pair Dan Yingsan is 1/3-1/2 of the inner diameter of the cylinder body.
2. The semiconductor-grade straight-pull composite casting tube according to claim 1, wherein the tube body is of a double-layer structure and comprises an outer-layer tube and an inner-layer tube matched with the inner wall of the outer-layer tube, and the thickness of the inner-layer tube is 1/4-1/3 of that of the outer-layer tube.
3. The semiconductor-grade straight-pulling composite casting cylinder according to claim 2, wherein the lower end face of the inner cylinder is fixedly embedded in a clamping groove arranged on the inner wall of the outer cylinder, and the clamping groove is close to one end of the main Dan Yingsan and is 100-200mm away from the lower end face of the outer cylinder.
4. A semiconductor grade czochralski re-cast cartridge according to claim 2 or 3, wherein the outer layer cartridge thickness is 10-20mm.
5. The semiconductor-grade straight-pull composite casting tube according to claim 2, wherein the variable-diameter cross section of the junction of the outer-layer tube and the lower flange table is of a diamond-shaped structure.
6. A semiconductor-grade straight-pull re-casting cylinder according to any one of claims 1 to 3 and 5, wherein the positioning assembly comprises a positioning plate and symmetrically arranged limit bolts, the limit bolts are arranged at two ends of the diameter of an upper flange table on the upper end surface of the outer wall of the cylinder body, and the two ends of the limit bolts are respectively connected with the positioning plate and the upper flange table; the upper end face of the quartz cylinder is connected with the positioning plate.
7. The semiconductor grade czochralski and compound casting tube of claim 6, wherein a plurality of evenly arranged support bars are also arranged between the upper flange table and the lower flange table.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010818389.6A CN111850679B (en) | 2020-08-14 | 2020-08-14 | Semiconductor-level straight-pulling re-casting cylinder |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010818389.6A CN111850679B (en) | 2020-08-14 | 2020-08-14 | Semiconductor-level straight-pulling re-casting cylinder |
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| Publication Number | Publication Date |
|---|---|
| CN111850679A CN111850679A (en) | 2020-10-30 |
| CN111850679B true CN111850679B (en) | 2024-08-02 |
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| CN202010818389.6A Active CN111850679B (en) | 2020-08-14 | 2020-08-14 | Semiconductor-level straight-pulling re-casting cylinder |
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| CN114381797B (en) * | 2021-12-29 | 2023-03-17 | 宁夏申和新材料科技有限公司 | Telescopic quartz feeding device, straight pulling single crystal furnace and method for improving pulling speed |
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| CN202543383U (en) * | 2012-03-23 | 2012-11-21 | 内蒙古中环光伏材料有限公司 | Compound feeder used for particle raw material |
| CN210636091U (en) * | 2019-05-23 | 2020-05-29 | 内蒙古中环光伏材料有限公司 | Novel compound feeder for pulling single crystal |
| CN212865063U (en) * | 2020-08-14 | 2021-04-02 | 内蒙古中环领先半导体材料有限公司 | Semiconductor-grade straight-pulling re-casting barrel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2010024123A (en) * | 2008-07-24 | 2010-02-04 | Sumco Corp | Device for feeding silicon melt and apparatus for growing silicon single crystal equipped with the same |
| JP2010083685A (en) * | 2008-09-29 | 2010-04-15 | Kyocera Corp | Raw material feeding device and apparatus and method for producing single crystal |
| CN202865390U (en) * | 2012-04-09 | 2013-04-10 | 江苏通宁新能源科技有限公司 | Secondary feeding device for silicon single crystal rod processing |
| CN203440494U (en) * | 2013-08-06 | 2014-02-19 | 浙江晶盛机电股份有限公司 | External continuous feeding device shared by multiple coil bases |
| KR101598708B1 (en) * | 2014-08-27 | 2016-02-29 | (주)에프아이에스 | Apparatus for Growing Silicon Ingot |
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| CN110093662B (en) * | 2019-05-23 | 2023-10-10 | 内蒙古中环光伏材料有限公司 | Re-casting device for Czochralski single crystal and application method thereof |
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