CN111850679A - Semiconductor-grade straight-pulling re-casting barrel - Google Patents
Semiconductor-grade straight-pulling re-casting barrel Download PDFInfo
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- CN111850679A CN111850679A CN202010818389.6A CN202010818389A CN111850679A CN 111850679 A CN111850679 A CN 111850679A CN 202010818389 A CN202010818389 A CN 202010818389A CN 111850679 A CN111850679 A CN 111850679A
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- umbrella
- quartz
- quartz umbrella
- cylinder
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- 238000005266 casting Methods 0.000 title claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 106
- 239000010453 quartz Substances 0.000 claims abstract description 102
- 239000002210 silicon-based material Substances 0.000 claims abstract description 60
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 239000010432 diamond Substances 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 238000011084 recovery Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 11
- 230000002035 prolonged effect Effects 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 4
- 239000000872 buffer Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000006004 Quartz sand Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 3
- 235000017491 Bambusa tulda Nutrition 0.000 description 3
- 241001330002 Bambuseae Species 0.000 description 3
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 3
- 239000011425 bamboo Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a semiconductor grade straight-pulling re-throwing barrel which comprises a barrel body, a molybdenum rod and a main quartz umbrella, wherein the main quartz umbrella is arranged at the lower end of the barrel body; the main quartz umbrella is also provided with a quartz cylinder which is used for isolating the molybdenum rod and the silicon material and penetrates through the auxiliary quartz umbrella; and the upper end surface of the cylinder body is provided with a positioning component for adjusting the lifting positions of the main quartz umbrella and the auxiliary quartz umbrella. The re-feeding cylinder buffers the falling speed of the silicon material, reduces the impact of the silicon material on the main quartz umbrella and reduces the risk of splashing of the silicon material; fixing the descending distance to adjust the parachute opening height and the blanking speed of the re-throwing cylinder; the molybdenum rod is prevented from directly contacting with the silicon material, the purity of the silicon material entering the re-feeding cylinder is ensured, and the quality of the straight-pulled single crystal is improved; the strength of the re-feeding cylinder is improved, the service life of the re-feeding cylinder is prolonged, and the preparation cost of the re-feeding cylinder is reduced.
Description
Technical Field
The invention belongs to the technical field of semiconductor straight-pulling single crystal auxiliary equipment, and particularly relates to a semiconductor-grade straight-pulling repeated casting barrel.
Background
In the preparation process of semiconductor grade single crystal, the re-feeding cylinder is a common important feeding tool, and the structure of the re-feeding cylinder directly influences the feeding amount and the drawing quality of silicon materials. Chinese patent CN210636091U discloses a novel compound feeder for pulling single crystal, which comprises a compound feeding barrel, a quartz umbrella and a fixing frame, wherein the compound feeding barrel is of a structure with a wide top and a narrow bottom, and the compound feeding barrel of the structure has the following problems:
firstly: the quartz umbrella arranged at the lower end of the secondary feeding cylinder is large in impact force of falling of silicon materials, the bottom impact force of the quartz umbrella is large, the secondary feeding materials can be driven to rotate during feeding, and the silicon splashing risk is increased after the silicon materials fall into the liquid level of the silicon materials.
Secondly, the method comprises the following steps: meanwhile, as the molybdenum rod is used as a pull rod to operate the quartz umbrella, the silicon material is easily polluted by molybdenum metal, the technical parameters of the semiconductor-grade monocrystalline silicon are seriously influenced, and the molybdenum rod can not be applied to the repeated feeding of the semiconductor-grade monocrystalline silicon; and the upper end surface of the re-casting cylinder is not designed to be fool-proof, so that potential safety hazards exist when the umbrella is re-cast and opened.
Also: in the structure, a transition structure between the middle second cylinder part and the lower third cylinder part is a cross section plane, and stress concentration is easily generated at the position close to the outer wall of the upper end face of the third cylinder part, so that the connecting part of the third cylinder part and the second cylinder part of the re-casting cylinder is not strong enough, cracks are easily generated, and the service life of the re-casting cylinder is seriously influenced.
And finally: in addition, the overall cost of the re-casting barrel with the structure is high, the use frequency is high, once any quality occurs, the whole re-casting barrel needs to be replaced, and the processing cost is increased.
Therefore, how to design a re-feeding cylinder suitable for re-feeding semiconductor-grade single crystals solves the technical problems that the re-feeding cylinder in the prior art is easy to splash silicon and pollute silicon materials and has short service life, and is the key for improving the re-feeding efficiency, ensuring the re-feeding quality and reducing the processing cost.
Disclosure of Invention
The invention provides a semiconductor-grade straight-pull re-casting barrel, which solves the technical problems that in the prior art, a re-casting barrel is easy to splash silicon and pollute silicon materials and has short service life.
In order to solve the technical problems, the invention adopts the technical scheme that:
a semiconductor grade straight-pull re-casting barrel comprises a barrel body, a molybdenum rod and a main quartz umbrella arranged at the lower end of the barrel body, wherein an auxiliary quartz umbrella is further arranged on the molybdenum rod and above the main quartz umbrella; the main quartz umbrella is also provided with a quartz cylinder which is used for isolating the molybdenum rod and the silicon material and penetrates through the auxiliary quartz umbrella; and the upper end surface of the cylinder body is provided with a positioning component for adjusting the lifting positions of the main quartz umbrella and the auxiliary quartz umbrella.
Further, the barrel body is of a double-layer structure and comprises an outer layer barrel and an inner layer barrel matched with the inner wall of the outer layer barrel, and the thickness of the inner layer barrel is 1/4-1/3 of that of the outer layer barrel.
Furthermore, the lower end face of the inner-layer cylinder is embedded and fixed in a clamping groove arranged on the inner wall of the outer-layer cylinder, and the clamping groove is close to one end of the main quartz umbrella and is 200mm away from the lower end face of the outer-layer cylinder by 100 mm.
Further, the thickness of the outer layer cylinder is 10-20 mm.
Furthermore, the auxiliary quartz umbrella is arranged at one end of the lower section of the cylinder body, which is far away from the main quartz umbrella, and the auxiliary quartz umbrella is positioned at 1/4-3/4 of the height of the lower flange platform on the outer wall of the cylinder body.
Furthermore, the auxiliary quartz umbrella is of a circular truncated cone-shaped structure, the large-diameter end of the auxiliary quartz umbrella is arranged close to one side of the main quartz umbrella, and the angle of a bus of the auxiliary quartz umbrella is 30-60 degrees.
Further, the diameter of the large-diameter end of the secondary quartz umbrella is 1/3-1/2 of the inner diameter of the inner layer cylinder.
Furthermore, the variable diameter cross section at the joint of the outer layer cylinder and the lower flange platform is of a diamond structure.
Furthermore, the positioning assembly comprises a positioning plate and symmetrically arranged limiting bolts, the limiting bolts are arranged at two ends of the diameter of the upper flange platform on the upper end surface of the outer wall of the barrel body, and two ends of the limiting bolts are respectively connected with the positioning plate and the upper flange platform; the upper end face of the quartz cylinder is connected with the positioning plate.
Furthermore, a plurality of supporting rods which are uniformly arranged are arranged between the upper flange platform and the lower flange platform.
Compared with the prior art, the secondary feeding cylinder and the secondary feeding cylinder designed by the invention buffer the falling speed of the silicon material, reduce the impact of the silicon material on the main quartz umbrella and reduce the risk of splashing of the silicon material; fixing the descending distance to adjust the parachute opening height and the blanking speed of the re-throwing cylinder; the molybdenum rod is prevented from directly contacting with the silicon material, the purity of the silicon material entering the re-feeding cylinder is ensured, and the quality of the straight-pulled single crystal is improved; the strength of the re-feeding cylinder is improved, the service life of the re-feeding cylinder is prolonged, and the preparation cost of the re-feeding cylinder is reduced.
Drawings
FIG. 1 is a schematic diagram of a semiconductor level Czochralski reciprocating projection lens according to an embodiment of the invention;
FIG. 2 is a schematic structural view of a secondary quartz umbrella according to an embodiment of the present invention.
In the figure:
100. a barrel body 110, an outer barrel 120, an inner barrel
130. Clamping groove 200, molybdenum rod 300 and main quartz umbrella
400. Vice quartz umbrella 500, quartz cylinder 600, locating component
610. Positioning plate 620, limit bolt 700 and upper flange platform
800. Lower flange table 900, bracing piece
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
The present embodiment provides a semiconductor grade czochralski and re-projection barrel, as shown in fig. 1, comprising a barrel body 100, a molybdenum rod 200 and a main quartz umbrella 300 arranged at the lower end of the barrel body 100, wherein an auxiliary quartz umbrella 400 is further arranged on the molybdenum rod 200 and right above the main quartz umbrella 300; the main quartz umbrella 300 is also provided with a quartz cylinder 500 which is used for isolating the molybdenum rod 200 and the silicon material and penetrates through the auxiliary quartz umbrella 400; the upper end surface of the cylinder body 100 is provided with a positioning assembly 600 for adjusting the elevation positions of the main quartz umbrella 300 and the sub quartz umbrella 400.
Specifically, the tube body 100 has a double-layer structure, and includes an outer tube 110 and an inner tube 120 adapted to an inner wall of the outer tube 110, both the outer tube 110 and the inner tube 120 are variable diameter tubes, and have a structure with a wide top and a narrow bottom, and a connection cross section at a variable diameter position is a diamond structure, that is, the variable diameter cross section at the connection position between the outer tube 110 and the lower flange 800 at the variable diameter position of the outer tube 110 is a diamond structure. The connection strength of the reducing positions of the upper section and the lower section can be improved, the stress concentration is reduced, and meanwhile, the fixing strength of the lower flange platform 800 is improved, so that the stability of the re-casting cylinder placed at the furnace platform opening of the single crystal furnace is improved, and the service time of the re-casting cylinder is prolonged.
In the embodiment, the thickness of the outer layer cylinder 110 is 10-20mm, and the thickness of the inner layer cylinder 120 is 1/4-1/3 of the thickness of the outer layer cylinder 110; and the outer cylinder 110 is a common quartz sand layer; the inner barrel 120 is a high purity quartz sand layer. This is because, when the thickness of the inner layer tube 120 is less than 1/4 of the thickness of the outer layer tube 110, the thickness of the inner layer tube 120 is thinner, the strength is insufficient, the inner layer tube is easy to crack, and the risk of cracking is increased; if the thickness of the inner layer cylinder 120 is greater than 1/3 of the thickness of the outer layer cylinder 110, the thickness of the inner layer cylinder 120 is increased, the overall weight of the re-casting cylinder is increased, the installation and replacement of the inner layer cylinder 120 are not convenient, the diameter of the inner wall of the inner layer cylinder 120 can be reduced, and the bearing weight of the overall silicon material is reduced. Preferably, when the thickness of the inner tube 120 is 1/4-1/3 of the thickness of the outer tube 110, both the mechanical strength of the inner tube 120 and the ease of installation are optimized.
Further, the lower end face of the inner tube 120 is embedded in the slot 130 disposed on the inner wall of the outer tube 110, the slot 130 is matched with the lower end face of the inner tube 120, and the slot 130 is disposed near one end of the main quartz umbrella 300 and is 200mm away from the lower end face of the outer tube 110. The position of the clamping groove 130 does not interfere with the position of the upper end face of the main quartz umbrella 300, and does not stagger a distance with the lowest position of the auxiliary quartz umbrella 400, so that the descending of silicon materials is not influenced.
The double-layer structure of the double-throwing cylinder which is formed by combining the outer-layer cylinder 110 made of common quartz sand and the inner-layer cylinder 120 made of high-purity quartz sand greatly reduces the production cost of the double-throwing cylinder, and can prolong the service time of the double-throwing cylinder while ensuring the weight of the silicon material. The structure not only saves the use of the preparation material of the re-feeding cylinder, but also reduces the manufacturing cost of the whole re-feeding cylinder by about 2/3 compared with the conventional re-feeding cylinder, namely the manufacturing cost of the re-feeding cylinder with the double-layer structure is about 1/3 of the production cost of the conventional re-feeding cylinder.
In order to facilitate the fixing at the furnace mouth of the single crystal furnace during the feeding of the re-casting barrel, an upper flange platform 700 and a lower flange platform 800 are respectively arranged on the upper end surface and the reducing part of the outer layer barrel 110, and a plurality of support rods 900, preferably four support rods 900, are arranged between the upper flange platform 700 and the lower flange platform 800. The supporting rod 900 arranged between the upper flange platform 700 and the lower flange platform 800 is matched with the positioning assembly 600 together, the overall strength of the re-casting barrel is enhanced, the frequency of shaking generated under the impact of the re-casting barrel is reduced, the risk of damage and crack in the use process of the re-casting barrel is also reduced, and therefore the service life of the re-casting barrel is prolonged.
As shown in FIG. 2, the sub-umbrella 400 is disposed at one end of the lower section of the inner tube 120 away from the main umbrella 300, and the sub-umbrella 400 is located at 1/4-3/4 of the height of the lower flange 800 disposed on the outer wall of the tube body 100, i.e., 1/4-3/4 of the height of the sub-umbrella 400 from the lower end of the tube body 100. This is because when the height of vice quartz umbrella 400 was less than the 1/4 of lower flange platform 800 distance section of thick bamboo body 100 lower end face height, was close to the reducing junction, leads to silicon material to pile up easily, produced the card material, was unfavorable for silicon material to descend, and because the distance of vice quartz umbrella 400 to main quartz umbrella 300 was too big this moment, under the effect of gravity, can't play the effect that slows down silicon material descending speed. When the height of the secondary quartz umbrella 400 is greater than 3/4, which is the height of the lower flange 800 from the lower end surface of the cylinder body 100, the gap between the secondary quartz umbrella 400 and the clamping groove 130 is reduced when the secondary quartz umbrella 400 descends, and the clamping materials or silicon material accumulation is easy to check. Therefore, preferably, the height of the secondary quartz umbrella 400 is 1/4-3/4 of the height of the lower flange platform 800 from the lower end surface of the cylinder body 100, so that the silicon material can be decelerated and lowered to reduce the impact force of the silicon material on the main quartz umbrella 300, the secondary silicon feeding material is prevented from being driven by the main quartz umbrella 300 to rotate, and the risk of silicon splashing after the silicon material falls into the liquid level of the silicon material can be reduced to the maximum extent.
Further, the secondary quartz umbrella 400 is a circular truncated cone-shaped structure, the large-diameter end of the secondary quartz umbrella 400 is arranged close to one side of the primary quartz umbrella 300, and the generatrix angle theta of the secondary quartz umbrella 400 is 30-60 degrees. This is because, when the generatrix angle θ of the secondary quartz umbrella 400 is smaller than 30 °, the secondary quartz umbrella 400 cannot play a role in delaying the silicon material descent speed; when the generatrix angle theta of the secondary quartz umbrella 400 is larger than 60 degrees, the secondary quartz umbrella 400 is easy to cause material jamming.
The diameter of the large-diameter end of the secondary quartz umbrella 400 is 1/3-1/2 of the inner diameter of the inner layer cylinder 120, because the diameter of the secondary quartz umbrella 400 is too small to play a role in slowing down the blanking speed of silicon materials; if too large, the material is easily stuck. Preferably, when the diameter of the large-diameter end of the secondary quartz umbrella 400 is within the range of 1/3-1/2 of the inner diameter of the inner layer cylinder 120, the secondary quartz umbrella not only can slow down the blanking speed of the silicon material, but also can reduce the dust generated by the rapid reduction of the silicon material, thereby improving the primary crystallization rate and the rod-shaping rate of the single crystal and realizing the consistency of the two-rate-of-re-feeding index and the non-re-feeding index. Meanwhile, the secondary quartz umbrella 400 with the structure has small particle diameter because the silicon material for semiconductor level reuse is intersected with the silicon material for solar level reuse, and the material blocking phenomenon can not occur during blanking.
Further, locating component 600 includes locating plate 610 and the spacing bolt 620 of symmetry setting, and the diameter both ends of the last flange platform 700 of spacing bolt 620 setting at a section of thick bamboo body 100 outer wall up end, spacing bolt 620 both ends can be dismantled with locating plate 610 and last flange platform 700 respectively and be connected, and the up end of a quartz capsule 500 is set up on locating plate 610 by fixed connection. The positioning assembly 600 can further limit the lowest position of the main quartz umbrella 300, not only can fix the descending distance of the main quartz umbrella 300, but also can determine the opening height of the secondary casting cylinder so as to adjust the falling speed and the falling flow direction of the silicon material, thereby being beneficial to the stable and uniform falling of the silicon material into the quartz crucible, reducing the splashing of the silicon material and ensuring the crystal pulling quality.
1. By adopting the re-feeding barrel designed by the invention, the silicon material can be decelerated and descended by arranging the auxiliary quartz umbrella, so that the impact force of the silicon material on the main quartz umbrella is reduced, the re-feeding silicon material is prevented from being driven by the main quartz umbrella to rotate, and the silicon splashing risk of the silicon material after falling into the liquid level of the silicon material can be reduced to the maximum extent. Because the silicon material for semiconductor level re-casting is intersected with the silicon material for solar level re-casting, the particle diameter is small, and the silicon material is not blocked when the auxiliary quartz umbrella is arranged during blanking.
2. The quartz cylinder is arranged to isolate the molybdenum rod, so that the molybdenum rod is prevented from directly contacting with the silicon material, the contamination of the silicon material by metal is reduced, and the purity of the silicon material is ensured; in order to ensure that the molybdenum rod can freely pull the main quartz umbrella and ensure that the auxiliary quartz umbrella and the main quartz umbrella move up and down together, a gap is arranged between the molybdenum rod and the quartz cylinder, the structure can relieve the friction and impact of silicon materials on the inner wall of the inner-layer cylinder, increase the swinging moving space of the silicon materials in the inner-layer cylinder, further improve the liquidity of the silicon materials and reduce the accumulation or blocking of the silicon materials.
3. The setting of locating component can further inject the extreme low position that main quartz umbrella descends, not only can fix the descending distance of main quartz umbrella, can decide the section of thick bamboo that throws again and open the umbrella height moreover to adjust silicon material falling speed and whereabouts flow direction, be favorable to during silicon material falls to quartz crucible steadily evenly, reduce the silicon material and splash. The locating component is matched with the supporting rod arranged between the upper flange platform and the lower flange platform, the overall strength of the re-casting barrel is enhanced, the frequency of shaking generated under the impact of the re-casting barrel is reduced, the risk of damage and crack in the use process of the re-casting barrel is also reduced, and therefore the service life of the re-casting barrel is prolonged.
4. Meanwhile, the connecting surface with the diamond-shaped cross section is arranged at the connecting part of the reducing diameters of the upper section and the lower section of the re-casting barrel, so that the connecting strength of the reducing parts of the upper section and the lower section can be further improved, the stress concentration is reduced, the fixing strength of the lower flange table is improved, the placing stability of the re-casting barrel at the furnace table opening of the single crystal furnace is improved, and the service time of the re-casting barrel is prolonged.
5. The double-layer structure of the double-throwing cylinder reduces the production cost of the double-throwing cylinder, and can prolong the service time of the double-throwing cylinder while ensuring the weight of the silicon material; the cost for manufacturing the re-casting barrel with the structure is about 1/3 of the production cost of the prior re-casting barrel.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (10)
1. A semiconductor grade straight-pull re-casting barrel comprises a barrel body, a molybdenum rod and a main quartz umbrella arranged at the lower end of the barrel body, and is characterized in that an auxiliary quartz umbrella is further arranged on the molybdenum rod and above the main quartz umbrella; the main quartz umbrella is also provided with a quartz cylinder which is used for isolating the molybdenum rod and the silicon material and penetrates through the auxiliary quartz umbrella; and the upper end surface of the cylinder body is provided with a positioning component for adjusting the lifting positions of the main quartz umbrella and the auxiliary quartz umbrella.
2. The semiconductor grade Czochralski reset barrel of claim 1, wherein the barrel body is of a double-layer structure and comprises an outer barrel and an inner barrel matched with the inner wall of the outer barrel, and the thickness of the inner barrel is 1/4-1/3 of the thickness of the outer barrel.
3. The semiconductor-grade Czochralski re-throwing barrel as claimed in claim 2, wherein the lower end surface of the inner barrel is embedded and fixed in a clamping groove arranged on the inner wall of the outer barrel, and the clamping groove is close to one end of the main quartz umbrella and is 200mm away from the lower end surface of the outer barrel.
4. The semiconductor grade czochralski reset barrel of claim 2 or 3, wherein the thickness of the outer barrel is 10-20 mm.
5. The semiconductor grade CZ re-projection barrel as claimed in claim 4, wherein the secondary quartz umbrella is disposed at a lower section of the barrel body at a position away from the primary quartz umbrella, and the secondary quartz umbrella is located at 1/4-3/4 of the height of the flange platform disposed below the outer wall of the barrel body.
6. The semiconductor-grade czochralski re-projection barrel as claimed in claim 5, wherein the secondary quartz umbrella is a truncated cone structure, the large diameter end of the secondary quartz umbrella is arranged close to one side of the primary quartz umbrella, and the generatrix angle of the secondary quartz umbrella is 30-60 °.
7. The semiconductor grade Czochralski recovery projection barrel of claim 5 or 6, wherein the minor quartz umbrella major diameter end diameter is 1/3-1/2 of the inner diameter of the inner barrel.
8. The semiconductor grade czochralski repeated casting barrel as claimed in claim 7, wherein the variable diameter cross section at the joint of the outer barrel and the lower flange platform is of a diamond structure.
9. The semiconductor grade straight pulling re-throwing cylinder as claimed in any one of claims 5 to 6 and 8, wherein the positioning assembly comprises a positioning plate and symmetrically arranged limiting bolts, the limiting bolts are arranged at two ends of the diameter of the upper flange platform on the upper end surface of the outer wall of the cylinder body, and the two ends of the limiting bolts are respectively connected with the positioning plate and the upper flange platform; the upper end face of the quartz cylinder is connected with the positioning plate.
10. The semiconductor grade czochralski re-casting barrel of claim 9, wherein a plurality of uniformly arranged support rods are further arranged between the upper flange platform and the lower flange platform.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010818389.6A CN111850679B (en) | 2020-08-14 | 2020-08-14 | Semiconductor-level straight-pulling re-casting cylinder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010818389.6A CN111850679B (en) | 2020-08-14 | 2020-08-14 | Semiconductor-level straight-pulling re-casting cylinder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111850679A true CN111850679A (en) | 2020-10-30 |
| CN111850679B CN111850679B (en) | 2024-08-02 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114381797A (en) * | 2021-12-29 | 2022-04-22 | 宁夏申和新材料科技有限公司 | Telescopic quartz feeding device, straight pulling single crystal furnace and method for improving pulling speed |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010024123A (en) * | 2008-07-24 | 2010-02-04 | Sumco Corp | Device for feeding silicon melt and apparatus for growing silicon single crystal equipped with the same |
| JP2010083685A (en) * | 2008-09-29 | 2010-04-15 | Kyocera Corp | Raw material feeding device and apparatus and method for producing single crystal |
| CN202543383U (en) * | 2012-03-23 | 2012-11-21 | 内蒙古中环光伏材料有限公司 | Compound feeder used for particle raw material |
| CN202865390U (en) * | 2012-04-09 | 2013-04-10 | 江苏通宁新能源科技有限公司 | Secondary feeding device for silicon single crystal rod processing |
| CN203440494U (en) * | 2013-08-06 | 2014-02-19 | 浙江晶盛机电股份有限公司 | External continuous feeding device shared by multiple coil bases |
| KR101598708B1 (en) * | 2014-08-27 | 2016-02-29 | (주)에프아이에스 | Apparatus for Growing Silicon Ingot |
| KR20160052141A (en) * | 2014-11-04 | 2016-05-12 | 주식회사 엘지실트론 | Material Feeder |
| CN205590832U (en) * | 2016-04-29 | 2016-09-21 | 河北宁通电子材料有限公司 | Secondary feeding ware |
| CN110093662A (en) * | 2019-05-23 | 2019-08-06 | 内蒙古中环光伏材料有限公司 | A kind of novel pulling of crystals throwing device and its application method again |
| CN210636091U (en) * | 2019-05-23 | 2020-05-29 | 内蒙古中环光伏材料有限公司 | Novel compound feeder for pulling single crystal |
| CN212865063U (en) * | 2020-08-14 | 2021-04-02 | 内蒙古中环领先半导体材料有限公司 | Semiconductor-grade straight-pulling re-casting barrel |
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2020
- 2020-08-14 CN CN202010818389.6A patent/CN111850679B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010024123A (en) * | 2008-07-24 | 2010-02-04 | Sumco Corp | Device for feeding silicon melt and apparatus for growing silicon single crystal equipped with the same |
| JP2010083685A (en) * | 2008-09-29 | 2010-04-15 | Kyocera Corp | Raw material feeding device and apparatus and method for producing single crystal |
| CN202543383U (en) * | 2012-03-23 | 2012-11-21 | 内蒙古中环光伏材料有限公司 | Compound feeder used for particle raw material |
| CN202865390U (en) * | 2012-04-09 | 2013-04-10 | 江苏通宁新能源科技有限公司 | Secondary feeding device for silicon single crystal rod processing |
| CN203440494U (en) * | 2013-08-06 | 2014-02-19 | 浙江晶盛机电股份有限公司 | External continuous feeding device shared by multiple coil bases |
| KR101598708B1 (en) * | 2014-08-27 | 2016-02-29 | (주)에프아이에스 | Apparatus for Growing Silicon Ingot |
| KR20160052141A (en) * | 2014-11-04 | 2016-05-12 | 주식회사 엘지실트론 | Material Feeder |
| CN205590832U (en) * | 2016-04-29 | 2016-09-21 | 河北宁通电子材料有限公司 | Secondary feeding ware |
| CN110093662A (en) * | 2019-05-23 | 2019-08-06 | 内蒙古中环光伏材料有限公司 | A kind of novel pulling of crystals throwing device and its application method again |
| CN210636091U (en) * | 2019-05-23 | 2020-05-29 | 内蒙古中环光伏材料有限公司 | Novel compound feeder for pulling single crystal |
| CN212865063U (en) * | 2020-08-14 | 2021-04-02 | 内蒙古中环领先半导体材料有限公司 | Semiconductor-grade straight-pulling re-casting barrel |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114381797A (en) * | 2021-12-29 | 2022-04-22 | 宁夏申和新材料科技有限公司 | Telescopic quartz feeding device, straight pulling single crystal furnace and method for improving pulling speed |
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| CN111850679B (en) | 2024-08-02 |
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