CN111830295A - Device for testing electric performance of micro-element - Google Patents
Device for testing electric performance of micro-element Download PDFInfo
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- CN111830295A CN111830295A CN201910313185.4A CN201910313185A CN111830295A CN 111830295 A CN111830295 A CN 111830295A CN 201910313185 A CN201910313185 A CN 201910313185A CN 111830295 A CN111830295 A CN 111830295A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
Abstract
The application discloses a device for testing electrical performance of a micro-component, the device comprises: the probe testing unit comprises a substrate unit, a first electrode, a piezoelectric film and a second electrode which are sequentially stacked; the first electrode and the second electrode generate voltage difference to control the piezoelectric film to deform, and accordingly the probe test unit is controlled to bend towards one side. Through the mode, the micro-component electrical performance testing device can achieve micro-component electrical performance testing and is high in efficiency.
Description
Technical Field
The application relates to the technical field of testing, in particular to a device for testing the electrical performance of a micro-element.
Background
In the process of processing the display panel, in order to reduce the cost and improve the efficiency, the micro-components are generally transferred by a batch transfer technology at present. In order to ensure the effectiveness of batch transfer, before batch transfer, the electrical performance of the micro-components is generally tested, so as to eliminate the micro-components whose electrical performance does not pass.
The inventor of the application finds that the micro-element has a complex surface structure and has the conditions of fluctuation and the like due to the small size of the electrode in the micro-element in the long-term research process; the traditional test device has large test needle size, and is difficult to test the electrical performance of the micro-element; and the traditional testing device can only test a single or a plurality of micro-components at a time, and the efficiency is low.
Disclosure of Invention
The technical problem that this application mainly solved provides a test microelement electrical property's device, can realize microelement electrical property test and efficiency is higher.
In order to solve the technical problem, the application adopts a technical scheme that: there is provided an apparatus for testing electrical performance of a micro-component, the apparatus comprising: the probe testing unit comprises a substrate unit, a first electrode, a piezoelectric film and a second electrode which are sequentially stacked; the first electrode and the second electrode generate voltage difference to control the piezoelectric film to deform, and accordingly the probe test unit is controlled to bend towards one side.
Wherein, every the base plate unit is back to first electrode one side all indent in order to form the attenuate region, the attenuate region first electrode piezoelectric film second electrode one-to-one, and every group the attenuate region first electrode piezoelectric film the second electrode is in orthographic projection on the base plate unit has coincidence zone.
Wherein the substrate unit includes: the first base layer is provided with a plurality of through holes, and the first base layers of the adjacent probe test units are mutually connected; the second basic unit, be located first basic unit with between the first electrode, and cover the hole, the hole corresponds the second basic unit forms the attenuate region is adjacent the probe test unit the disconnection of second basic unit, the second basic unit is along with piezoelectric film deformation and deformation.
Wherein the thickness of the second base layer is 0.5-20 microns.
Wherein the first electrode and the piezoelectric film are strip-shaped, the width of the piezoelectric film is greater than that of the first electrode, the piezoelectric film covers the first electrode in the width direction, and the first electrode and the second electrode are completely separated by the piezoelectric film.
The first electrode protrudes out of the piezoelectric film in the length direction.
Wherein the probe test unit further comprises: and a third electrode extending from the second electrode to the first surface of the substrate unit, the third electrode and the first electrode being disposed on the same layer of the substrate unit and having a predetermined interval therebetween.
In the row direction, the first electrodes corresponding to the adjacent probe test units are disconnected with each other, and the third electrodes corresponding to the adjacent probe test units are disconnected with each other; the first electrode corresponding to each probe test unit is led out through a first lead, the third electrode corresponding to each probe test unit is led out through a second lead, and each probe test unit is independently controlled through the first lead and the second lead.
In the row direction, the first electrodes corresponding to the adjacent probe test units are electrically connected through a first metal wire, and the third electrodes corresponding to the adjacent probe test units are electrically connected through a second metal wire; the first electrodes corresponding to all the probe test units are led out through a first lead, the third electrodes corresponding to all the probe test units are led out through a second lead, and all the probe test units are controlled in a unified mode through the first leads and the second leads.
Wherein the probe test unit further comprises: and the contact salient point is positioned on one side of the second electrode, which is far away from the piezoelectric film, and is in contact with the electrode of the micro-element.
The beneficial effect of this application is: different from the situation of the prior art, the device for testing the electrical performance of the micro-component provided by the application comprises a plurality of probe testing units arranged in an array, wherein each probe testing unit comprises a substrate unit, a first electrode, a piezoelectric film and a second electrode which are sequentially stacked; when a voltage difference is generated between the first electrode and the second electrode, the piezoelectric film deforms, and the piezoelectric film drives the first electrode and the second electrode to deform, so that the probe test unit bends towards one side. The bending degree of the probe test unit is adjusted by controlling the voltage difference between the first electrode and the second electrode, so that the reliability of the contact between the probe test unit and the electrode of the micro-component is ensured, and the virtual connection problem of the probe test unit when the heights of the electrodes of the micro-component are inconsistent due to factors such as structural design of the micro-component, wafer warping and process fluctuation is reduced; the method can realize the electrical performance test of a plurality of micro-elements with different heights in a single test so as to improve the test efficiency.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts. Wherein:
FIG. 1 is a schematic diagram of an embodiment of an apparatus for testing electrical performance of a micro-component according to the present application;
FIG. 2 is a schematic structural diagram of the piezoelectric film of FIG. 1 after bending;
FIG. 3 is a schematic top view of one embodiment of the apparatus for testing electrical performance of the micro-device of FIG. 1;
FIG. 4 is a schematic top view of another embodiment of the apparatus for testing electrical performance of the micro-component of FIG. 1;
FIG. 5 is a schematic top view of another embodiment of the apparatus for testing electrical performance of the micro-component of FIG. 1;
FIG. 6 is a schematic flow chart illustrating one embodiment of a method for fabricating an apparatus for testing electrical performance of a micro-component according to the present application;
FIG. 7 is a schematic flow chart illustrating an embodiment of a method for testing electrical properties of a micro-component according to the present application;
fig. 8 is a schematic structural diagram of an embodiment corresponding to steps S201 to S203 in fig. 7.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 1-2, fig. 1 is a schematic structural diagram of an embodiment of an apparatus for testing electrical performance of a micro device according to the present invention, and fig. 2 is a schematic structural diagram of an embodiment of a piezoelectric film of fig. 1 after being bent, where the apparatus 1 includes: a plurality of probe test units 10 arranged in an array, the probe test unit 10 including a substrate unit 100, a first electrode 102, a piezoelectric film 104, and a second electrode 106 sequentially stacked; the material of the first electrode 102 and the second electrode 106 may be metal (e.g., aluminum, copper, etc.), and the material of the piezoelectric film 104 may be an inorganic piezoelectric material (e.g., quartz crystal, piezoelectric ceramic, etc.), an organic piezoelectric material (e.g., polyvinylidene fluoride, etc.), or a composite piezoelectric material (e.g., an inorganic piezoelectric material embedded in an organic piezoelectric material). The voltage difference generated by the first electrode 102 and the second electrode 106 is configured to control the piezoelectric film 104 to deform, and the piezoelectric film 104 drives the first electrode 102 and the second electrode 106 to deform, so as to correspondingly control the probe testing unit 10 to bend towards one side (as shown in fig. 2). The bending degree of the probe test unit 10 is adjusted by controlling the voltage difference between the first electrode 102 and the second electrode 106, so that the reliability of the contact between the probe test unit 10 and the electrode of the micro-component is ensured, and the virtual connection problem of the probe test unit 10 when the heights of the electrodes of the micro-component are inconsistent due to factors such as the structural design of the micro-component, wafer warping and process fluctuation is reduced; the method can realize the electrical performance test of a plurality of micro-elements with different heights in a single test so as to improve the test efficiency.
In one embodiment, with continued reference to fig. 1, the probe test unit 10 provided in the present application further includes: and the contact bump 108 is positioned on the side of the second electrode 106 far away from the piezoelectric film 104 and is in contact with the electrode of the micro-component. The contact bump 108 may have a cylindrical shape, a prismatic shape, etc., and the contact bump 108 may ensure a contact area between the probe test unit 10 and the micro component, and accordingly, improve reliability of contact between the probe test unit 10 and the electrode of the micro component.
In another embodiment, with reference to fig. 1, one side of each substrate unit 100 opposite to the first electrode 102 is recessed to form a thinned region a, wherein the thinned region a, the first electrode 102, the piezoelectric film 104, and the second electrode 106 are in one-to-one correspondence, and orthographic projections of each group of the thinned region a, the first electrode 102, the piezoelectric film 104, and the second electrode 106 on the substrate unit 100 have overlapping regions. When the probe test unit 10 includes the contact bump 108, a projection of the contact bump 108 on the substrate unit 100 may be located at the center of the overlapping area. The thinning area a can enable the first electrode 102, the piezoelectric film 104, and the second electrode 106 stacked above the substrate unit 100 to form an overhead beam structure, and the piezoelectric film 104 can more easily drive the first electrode 102 and the second electrode 106 to deform under the action of the voltage difference.
In one application scenario, with continued reference to fig. 1, the substrate unit 100 includes: a first base layer 1000 and a second base layer 1002; the first substrate 1000 is provided with a plurality of through holes B, and the first substrates 1000 of adjacent probe test units 10 are connected to each other, that is, all the first substrates 1000 in the device 1 are connected to each other to form a whole plate-shaped structure. The second base layer 1002 is located between the first base layer 1000 and the first electrode 102 and covers the hole B, the second base layer 1002 corresponding to the hole B forms a thinned region a, the second base layer 1002 of the adjacent probe test unit 10 is disconnected, and the second base layer 1002 can deform along with the corresponding piezoelectric film 104. On one hand, the design manner of stacking the first base layer 1000 and the second base layer 1002 and the design manner of interconnecting the adjacent first base layers 1000 can make the preparation of the substrate unit 100 simpler; on the other hand, the design manner of the break between the second base layers 1002 of the adjacent probe test units 10 can reduce the mutual influence of the adjacent probe test units 10 when deforming, and reduce the probability of the break of the second base layers 1002. Of course, in other application scenarios, when the mechanical strength of the first electrode 102 is sufficiently high, the second base layer 1002 may not be provided.
In this embodiment, the thickness of the second base layer 1002 is 0.5 microns to 20 microns, e.g., 0.5 microns, 5 microns, 10 microns, 20 microns, etc. The design may be such that the second substrate 1002 is sufficiently deformed by the piezoelectric film 104.
In another embodiment, referring to fig. 3, fig. 3 is a schematic top view of the apparatus for testing electrical performance of the micro-device of fig. 1. The first electrode 102 and the piezoelectric film 104 are bar-shaped, the width of the piezoelectric film 104 is larger than that of the first electrode 102, the piezoelectric film 104 completely covers the first electrode 102 in the width direction, and the first electrode 102 and the second electrode 106 are completely separated by the piezoelectric film 104. In the present embodiment, the portion of the piezoelectric film 104 having a width exceeding the first electrode 102 may extend to the surface of the substrate unit 100 (e.g., the first base layer 1000). In addition, the length of the first electrode 102 may be greater than the length of the piezoelectric film 104, and in the length direction, the first electrode 102 has an end portion protruding from the piezoelectric film 104, which may facilitate the later wiring, even if the first electrode 102 is connected to the first power supply voltage V1 later. At this time, in order to insulate the first electrode 102 from the second electrode 106, the length of the second electrode 106 may be equal to or less than the length of the piezoelectric film 104, and accordingly, the second electrode 106 and the first electrode 102 are controlled not to contact each other and to be short-circuited. Since the first electrode 102 has been covered with the piezoelectric film 104 in the width direction, the width of the second electrode 106 at this time may be smaller than or equal to or larger than the width of the piezoelectric film 104.
In another embodiment, with reference to fig. 3, in the present embodiment, the probe test unit 10 further includes: the third electrode 101 extends from the second electrode 106 to the first surface (not labeled) of the substrate unit 100, and the third electrode 101 and the first electrode 102 on the first surface of the substrate unit 100 are disposed at the same layer and have a predetermined interval, and the predetermined interval is disposed to prevent a short circuit from occurring between the first electrode 102 and the third electrode 101. In the present embodiment, the second electrode 106 and the third electrode 101 are not clearly distinguished, the third electrode 101 may be formed at the same time when the second electrode 106 is formed, and the third electrode 101 may be disposed to facilitate the later lead-in, i.e., to connect the second electrode 106 to the second power voltage V2 later.
In an application scenario, please continue to refer to fig. 3, in the row direction X or the column direction Y, the first electrodes 102 corresponding to the adjacent probe testing units 10 are disconnected from each other, and the third electrodes 101 corresponding to the adjacent probe testing units 10 are disconnected from each other; the first electrode 102 of each probe test unit 10 is led out through a first lead 103, the first electrode 102 is connected to a first power voltage V1 through the first lead 103, the third electrode 101 of each probe test unit 10 is led out through a second lead 105, and the second electrode 106 is connected to a second power voltage V2 through the third electrode 101 and the second lead 105. In the row direction X or the column direction Y, each probe test unit 10 is controlled individually by the first lead 103 and the second lead 105, the voltage value of the first power voltage V1 connected to the adjacent probe test units 10 may be the same or different, and the voltage value of the second power voltage V2 connected to the adjacent probe test units 10 may be the same or different. At this time, each probe test unit 10 can adjust its bending degree according to the electrode height of its corresponding micro-component.
In another application scenario, referring to fig. 4, fig. 4 is a schematic top view of another embodiment of the apparatus for testing electrical performance of a micro device in fig. 1. In the present embodiment, in the row direction X or the column direction Y, the first electrodes 102 corresponding to the adjacent probe test units 10 are electrically connected through the first metal wire 200, and the third electrodes 101 corresponding to the adjacent probe test units 10 are electrically connected through the second metal wire 202; the first electrodes 102 corresponding to all the probe test units 10 are led out through a first lead 204, and the first electrodes 102 are connected to a first power voltage V3 through the first lead 204; the third electrodes 101 of all the probe test units 10 are led out through a second lead 206, and the second electrodes 106 are connected to the second power voltage V4 through the third electrodes 101 and the second lead 206. In the row direction X or the column direction Y, all the probe test units 10 are controlled by the first lead 204 and the second lead 206, the first power voltage V3 received by the adjacent probe test units 10 is the same, and the second power voltage V4 received by the adjacent probe test units 10 is the same, which makes the control process simpler. At this time, in order to ensure that all the probe test units 10 in the row direction are in good contact with the electrodes of the corresponding micro-components, the magnitudes of the first power voltage V3 and the second power voltage V4 are determined by the electrodes of the micro-components farthest from the probe test units 10.
In another application scenario, referring to fig. 5, fig. 5 is a schematic top view of another embodiment of the apparatus for testing electrical performance of a micro device in fig. 1. In the present embodiment, the first electrodes 102 of all adjacent probe test units 10 in the device 1b are electrically connected by a first metal wire 300, the first electrodes 102 of all probe test units 10 are led out by a first lead 304, and the first electrodes 102 are connected to a first power voltage V5 by the first lead 304. The third electrodes 101 of all adjacent probe test units 10 in the device 1b are electrically connected through a second metal wire 302, the third electrodes 101 of all probe test units 10 are led out through a second lead 306, and the second electrode 106 is connected to a second power voltage V6 through the third electrodes 101 and the second lead 306. In the whole apparatus 1b, all the probe test units 10 are controlled by the first lead 304 and the second lead 306, the first power voltage V5 received by all the probe test units 10 is the same, and the second power voltage V6 received by all the probe test units 10 is the same. At this time, in order to ensure that all the probe test units 10 are in good contact with the electrodes of the corresponding micro-components, the magnitudes of the first power voltage V5 and the second power voltage V6 are determined by the electrodes of the micro-components farthest from the probe test units 10.
Referring to fig. 6, fig. 6 is a schematic flow chart illustrating a method for manufacturing a device for testing electrical performance of a micro-component according to an embodiment of the present invention, the method comprising:
s101: first electrodes are formed on the surfaces of the plurality of substrate units arranged in an array. Specifically, the first electrodes may be formed on the surfaces of the plurality of substrate units by etching, lift-off (lift-off), or the like; the first electrodes corresponding to the adjacent substrate units are disconnected from each other. It should be noted that the disconnection is referred to as disconnection of the first electrode film layer, and is not referred to as disconnection of the electrical connection.
S102: and forming a piezoelectric film on the side of the first electrode far away from the substrate unit. Specifically, a whole layer of piezoelectric film may be deposited on the surface of the first electrode away from the substrate unit, and then patterned piezoelectric film may be formed by photolithography and dry etching (or wet etching), and the piezoelectric films of adjacent substrate units are disconnected from each other.
S103: forming a second electrode on one side of the piezoelectric film, which is far away from the first electrode; the first electrode and the second electrode generate voltage difference to control the piezoelectric film to deform, and accordingly the probe testing unit is controlled to bend towards one side. Specifically, the second electrode may be formed on the surface of the piezoelectric thin film by etching, lift-off, or the like.
In an embodiment, after the step S103, the preparation method provided by the present application further includes: forming a contact bump on one side of the second electrode, which is far away from the piezoelectric film; the contact bump may be formed by a lift-off process.
In another embodiment, when the substrate unit has a structure as shown in fig. 1, that is, includes a first base layer and a second base layer, the step S102 includes: providing a first base layer (e.g., a silicon base layer); and forming a third base layer (for example, a silicon oxide base layer) on the surface of the first base layer, and etching the third base layer, wherein the third base layer is divided into a plurality of mutually independent second base layers. The step S101 specifically includes: and forming a first electrode on the surfaces of the plurality of second base layers arranged in the array. After the step S103, the preparation method provided by the present application further includes: and etching one side of the first base layer, which is far away from the first electrode, to form through holes, wherein the through holes are in one-to-one correspondence with the second base layer, and the size of the through holes is smaller than that of the second base layer.
Referring to fig. 7-8, fig. 7 is a schematic flow chart of an embodiment of a method for testing electrical performance of a micro device according to the present application, and fig. 8 is a schematic structural diagram of an embodiment corresponding to steps S201-S203 in fig. 7. The micro-component referred by the application can be a micro-LED chip and the like, the LED chip can be a vertical type LED chip or a horizontal type LED chip, the vertical type LED chip is taken as an example for explanation, and the test method comprises the following steps:
s201: a conductive substrate 40 is provided, and a plurality of micro-components 42a, 42b, 42c are arranged in an array on the conductive substrate 40. In particular, as shown in fig. 8 a. One of the electrodes of the plurality of micro-components 42a, 42b, 42c is in contact with the conductive substrate 40, and the heights of the plurality of micro-components 42a, 42b, 42c may be non-uniform, e.g., the height of the micro-component 42b is less than the heights of the micro-components 42a and 42 c.
S202: a plurality of probe test units 10a, 10b, 10c in an apparatus 1 for testing electrical properties of micro-components are aligned with a plurality of micro-components 42a, 42b, 42c, one probe test unit 10a or 10b or 10c corresponding to one micro-component 42a or 42b or 42 c. In particular, as shown in FIG. 8b
S203: the device 1 is close to the conductive substrate 40, when the distance between the device 1 and one of the micro-components 42a, 42b or 42c on the conductive substrate 40 is smaller than the threshold value, the first electrode 102 of the plurality of probe test units 10a, 10b, 10c in the device 1 is connected to a first power voltage, the second electrode 106 of the plurality of probe test units 10a, 10b, 10c in the device 1 is connected to a second power voltage, the piezoelectric film 104 bends to one side of the micro-components 42a, 42b, 42c under the driving of the voltage difference, and the corresponding contact bump 108 is in contact with the other electrode of the micro-components 42a, 42b or 42 c. Specifically, as shown in fig. 8c, in this embodiment, the height of the micro-component 42b is smaller than the heights of the micro-components 42a and 42c, at this time, the deformation of the probe testing unit 10b corresponding to the micro-component 42b is larger than the other two, the voltage difference corresponding to the probe testing unit 10b is larger than the other two, or the voltage differences of all the probe testing units 10a, 10b, and 10c are the voltage differences required for the contact between the probe testing unit 10b and the micro-component 42b at this time.
S204: electrical performance tests are performed on the plurality of micro-components 42a, 42b, 42 c. At this time, the conductive temporary substrate 40 and the contact bump 108 simultaneously apply a test voltage/test current to both electrodes of the micro-component 42a, 42b, 42c, and the contact bump 108 and the second electrode 106 are at the same voltage.
The above description is only for the purpose of illustrating embodiments of the present application and is not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings of the present application or are directly or indirectly applied to other related technical fields, are also included in the scope of the present application.
Claims (10)
1. An apparatus for testing electrical performance of a micro-component, the apparatus comprising:
the probe testing unit comprises a substrate unit, a first electrode, a piezoelectric film and a second electrode which are sequentially stacked;
the first electrode and the second electrode generate voltage difference to control the piezoelectric film to deform, and accordingly the probe test unit is controlled to bend towards one side.
2. The apparatus of claim 1,
one side of each substrate unit, which is back to the first electrode, is concave to form a thinning area,
wherein, the attenuate region the first electrode piezoelectric film the second electrode one-to-one, and every group the attenuate region the first electrode piezoelectric film the second electrode is in orthographic projection on the base plate unit has coincidence zone.
Overlapping means that the projections of the four coincide, but the projections of the four do not coincide as in the following cross-book.
3. The apparatus of claim 2, wherein the substrate unit comprises:
the first base layer is provided with a plurality of through holes, and the first base layers of the adjacent probe test units are mutually connected;
the second basic unit, be located first basic unit with between the first electrode, and cover the hole, the hole corresponds the second basic unit forms the attenuate region is adjacent the probe test unit the disconnection of second basic unit, the second basic unit is along with piezoelectric film deformation and deformation.
4. The apparatus of claim 3,
the thickness of the second base layer is 0.5-20 microns.
5. The apparatus of claim 1,
the first electrode and the piezoelectric film are strip-shaped, the width of the piezoelectric film is larger than that of the first electrode, the piezoelectric film covers the first electrode in the width direction, and the first electrode and the second electrode are completely separated by the piezoelectric film.
6. The apparatus of claim 5,
in the length direction, the first electrode protrudes from the piezoelectric film.
7. The apparatus of claim 1, wherein the probe test unit further comprises:
and a third electrode extending from the second electrode to the first surface of the substrate unit, the third electrode and the first electrode being disposed on the same layer of the substrate unit and having a predetermined interval therebetween.
8. The apparatus of claim 7,
in the row direction, the first electrodes corresponding to the adjacent probe test units are disconnected, and the third electrodes corresponding to the adjacent probe test units are disconnected; the first electrode corresponding to each probe test unit is led out through a first lead, the third electrode corresponding to each probe test unit is led out through a second lead, and each probe test unit is independently controlled through the first lead and the second lead.
9. The apparatus of claim 7,
in the row direction, the first electrodes corresponding to the adjacent probe test units are electrically connected through a first metal wire, and the third electrodes corresponding to the adjacent probe test units are electrically connected through a second metal wire; the first electrodes corresponding to all the probe test units are led out through a first lead, the third electrodes corresponding to all the probe test units are led out through a second lead, and all the probe test units are controlled in a unified mode through the first leads and the second leads.
10. The apparatus of claim 1, wherein the probe test unit further comprises:
and the contact salient point is positioned on one side of the second electrode, which is far away from the piezoelectric film, and is in contact with the electrode of the micro-element.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112750714A (en) * | 2020-12-31 | 2021-05-04 | 深圳市思坦科技有限公司 | LED chip detection method |
| CN114441918A (en) * | 2022-01-07 | 2022-05-06 | 强一半导体（苏州）有限公司 | Prevent film probe head and film probe card that probe drops |
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