CN111821827A - Plasma washing device - Google Patents
Plasma washing device Download PDFInfo
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- CN111821827A CN111821827A CN201910729838.7A CN201910729838A CN111821827A CN 111821827 A CN111821827 A CN 111821827A CN 201910729838 A CN201910729838 A CN 201910729838A CN 111821827 A CN111821827 A CN 111821827A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/005—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by heat treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/32—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by electrical effects other than those provided for in group B01D61/00
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D8/00—Cold traps; Cold baffles
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/28—Cooling arrangements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2257/00—Components to be removed
- B01D2257/20—Halogens or halogen compounds
- B01D2257/204—Inorganic halogen compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2258/00—Sources of waste gases
- B01D2258/02—Other waste gases
- B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2259/00—Type of treatment
- B01D2259/80—Employing electric, magnetic, electromagnetic or wave energy, or particle radiation
- B01D2259/818—Employing electrical discharges or the generation of a plasma
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- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Thermal Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Treating Waste Gases (AREA)
Abstract
Disclosed is a plasma cleaning device of an indirect cooling system which does not use water when cooling a high-temperature decomposition gas containing a large amount of powder. The plasma scrubbing apparatus includes: a reaction unit which pyrolyzes, ionizes and burns harmful gas by high heat of plasma to generate decomposed gas; a powder transfer unit that cools the decomposed gas and transfers a large amount of powder contained in the decomposed gas without clogging; a powder collecting unit for collecting the powder transferred together with the cooled decomposition gas; a cooling trap for cooling the decomposed gas after the powder is collected; and a final cooling unit for performing final cooling on the cooled decomposition gas.
Description
Technical Field
The present invention relates to a plasma cleaning apparatus, and more particularly, to an indirect cooling type plasma cleaning apparatus which does not use water when cooling a high-temperature decomposition gas containing a large amount of powder.
Background
Semiconductor devices are manufactured through various manufacturing processes, such as oxidation, etching, deposition, and photolithography processes, in which toxic chemicals and chemical gases are used.
Recently, Giga (Giga) class semiconductor devices are being fabricated, and such high integration results in toxic chemical gases (e.g., C)2F4、CF4、C3F8、C4F10、NF3、SF6When the amount of the Per-Fluoro Compound or Per Fluoro Compound (Per Fluoro Compound)) is increased, these chemical gases are very toxic, and thus may have fatal influence on the human body or cause serious environmental problems in the case of being directly released into the atmosphere.
Therefore, it is necessary to discharge the harmful components to the atmosphere through a harmless treatment process in which the content of the harmful components is reduced to a permissible concentration or less.
For the harmless treatment process, a plasma scrubber without additional lng and oxygen is frequently used, which has an advantage in that it can treat harmful gas using high-heat flame of 1000 ℃.
Conventionally, a method of directly cooling a decomposition gas at a high temperature decomposed by plasma by using water has been mainly used, and in this way, water is used to cause generation of a large amount of waste water, so that there is a risk of leakage of the waste water. In particular, this is considered to be a major cause of environmental pollution, and therefore reliable wastewater management is required.
Further, it is necessary to efficiently cool the high-temperature decomposition gas and collect the powder contained in the decomposition gas, and in this process, it is necessary to prevent corrosion of the component by the decomposition gas.
Disclosure of Invention
Accordingly, an object of the present invention is to provide a plasma cleaning apparatus capable of efficiently collecting a large amount of powder contained in a decomposition gas in a process of processing the decomposition gas at a high temperature generated by burning a harmful gas discharged from a semiconductor powder process.
Another object of the present invention is to provide an indirect cooling type plasma cleaning apparatus without using water when cooling a high-temperature decomposition gas.
Another object of the present invention is to provide a plasma cleaning apparatus capable of preventing corrosion due to high-temperature decomposition gas.
The object is achieved by a plasma scrubbing apparatus, characterized by comprising: a reaction unit which pyrolyzes, ionizes and burns harmful gas containing a large amount of powder discharged through a semiconductor process by high heat of plasma to generate decomposed gas; a powder transfer unit that primarily cools the decomposed gas and transfers the large amount of powder without clogging; a powder collecting unit for collecting the powder transferred together with the primary cooled decomposition gas; a cooling trap for secondary cooling of the decomposed gas after the powder is collected; and a final cooling unit for final cooling of the secondarily cooled decomposition gas.
Preferably, the powder transfer unit includes: a cylindrical chamber; a blocking plate horizontally disposed at an upper end of the chamber and formed with a plurality of holes; and a plurality of tubes having one end fixed to each hole of the blocking plate to form independently divided passages for passing the decomposition gas of high temperature, wherein an inflow tube for a nitrogen pulse or an air pulse (pulsing) is provided adjacent to an upper end of the tubes.
Preferably, a large amount of powder contained in the decomposition gas of high temperature is pushed downward by the nitrogen gas or air supplied by the pulse.
Preferably, a mixing space is formed by allowing the length of the tubes to be short such that the lower ends of the tubes are located at a higher position than the lower end of the chamber, the mixing space mixing the decomposed gases discharged from the lower ends of the respective tubes with each other and forming a vortex.
Preferably, the powder collecting unit is provided with: a collection chamber having an upper surface on which a gas inlet port and a gas outlet port are formed, the gas inlet port being covered by the powder transfer unit, the gas outlet port being covered by being communicated with the cooling well, the collection chamber having a double-wall structure between which cooling water flows, the collection chamber including: the first collecting space is communicated with the gas inflow port; a second collection space in communication with the gas flow outlet; and a flow path connecting the first and second collecting spaces between the first and second collecting spaces, the flow path being provided with a plurality of partition walls, thereby forming a zigzag structure by an interval between a side wall of the collecting chamber and the partition walls.
Preferably, the cooling trap comprises: and a cooling chamber provided in a double-wall structure and provided at a side with a cooling water flow inlet and a cooling water flow outlet connected to a space between the double walls, wherein a plurality of cooling pipes communicating with the space between the double-wall structure are horizontally arranged in the cooling chamber such that the decomposition gas flowing in a vertical direction is in contact with the cooling pipes.
Preferably, the cooling pipes arranged in the lower part of the cooling chamber and the cooling pipes arranged in the upper part may form a right angle with each other.
Preferably, the final cooling unit includes: a cooling chamber having a gas inlet and a gas outlet provided at an upper end and a lower end thereof, respectively, and a cooling water inlet and a cooling water outlet formed at a side surface thereof; a blocking plate horizontally disposed adjacent to upper and lower ends of the cooling chamber and formed with a plurality of holes, respectively; and a cooling pipe having both ends fixed to the respective holes to form independently divided passages.
According to the present invention, when a large amount of powder is contained in high-temperature decomposition gas generated by burning harmful gas discharged from a semiconductor powder process, the high-temperature decomposition gas can be cooled and the powder can be efficiently collected.
Further, when cooling the high-temperature decomposition gas, indirect cooling is performed without using water, so that waste water is not generated, thereby preventing environmental pollution.
Further, by applying a plurality of cooling units in sequence, the high-temperature decomposition gas can be efficiently cooled to a desired temperature.
Drawings
Fig. 1 is a configuration diagram showing a plasma washing apparatus according to an embodiment of the present invention.
Fig. 2 (a) and (b) are a vertical sectional view and an isometric sectional view of the reaction unit, respectively.
Fig. 3 (a) to (c) are a perspective view, a vertical sectional view, and an isometric sectional view, respectively, illustrating the powder transfer unit.
Fig. 4 (a) to (c) are a vertical sectional view, a horizontal sectional view, and an isometric sectional view, respectively, showing the powder collection unit.
Fig. 5 (a) and (b) are an external view and an isometric sectional view of the cooling well, respectively.
Fig. 6 (a) and (b) are a vertical sectional view and an isometric sectional view, respectively, of the final cooling unit.
Description of the symbols
100: reaction unit 200: powder transfer unit
300: powder collecting unit 400: cooling trap
500: final cooling unit
Detailed Description
It is to be noted that the technical terms used in the present invention are only for describing specific embodiments and are not intended to limit the present invention. Also, technical terms used in the present invention should be interpreted as meanings commonly understood by those having ordinary knowledge in the technical field to which the present invention belongs, and should not be interpreted as an excessively generalized meaning or an excessively reduced meaning, unless otherwise specifically defined in the present invention.
Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Fig. 1 is a configuration diagram showing a plasma washing apparatus according to an embodiment of the present invention.
The plasma washing device includes: a reaction unit 100 which discharges decomposed gas by pyrolyzing, ionizing and burning harmful gas by high heat of plasma; a powder transfer unit 200 for cooling the high-temperature decomposition gas to 150 ℃ and transferring the powder without clogging; a powder collecting unit 300 for collecting the powder transferred together with the cooled decomposition gas; a cooling trap 400 for cooling the high-temperature decomposition gas to 80 ℃; and a final cooling unit 500 cooling the decomposition gas to 50 ℃. A discharge unit for discharging the treated decomposed gas is connected to the final cooling unit 500.
The plasma washing device of the invention can be arranged at the front end of the middle washing device using water, thereby further improving the treatment efficiency.
The configuration of each unit will be described in detail below.
Fig. 2 (a) and (b) are a vertical sectional view and an isometric sectional view of the reaction unit, respectively.
The reaction unit 100 is equipped with a reaction chamber 110, a harmful gas inflow port 120 into which harmful gas flows is formed at a side surface of the reaction chamber 110, a plasma torch 130 having a negative electrode and a positive electrode for applying high voltage is provided at an upper side of the reaction chamber 110, and plasma generating gas such as nitrogen or the like is supplied to the plasma torch.
As described above, since a harmful gas generated in a process of semiconductor etching or the like contains a per-fluorine compound, it is extremely harmful to a human body and has strong corrosiveness.
Therefore, the harmful gas flowing in through the harmful gas inflow port 120 forms a vortex and is pyrolyzed, ionized, and burned by the plasma arc generated by the plasma torch to generate decomposed gas.
By flowing the cooling water PCW in a jacket manner on the outer wall of the reaction chamber 110, thereby blocking heat discharge to the outside, and applying an inconel socket (inconel socket) inside the reaction chamber 110, it is possible to prevent the reaction chamber 110 itself from being damaged due to high temperature or corrosive gas, and to easily replace it.
Fig. 3 (a) to (c) are a perspective view, a vertical sectional view, and an isometric sectional view, respectively, illustrating the powder transfer unit.
The main function of the powder transfer unit 200 is to cool the decomposition gas at a high temperature and to smoothly transfer a large amount of powder contained in the harmful gas discharged from the semiconductor powder process to the powder collection unit 300 without blocking the pipes.
The powder transfer unit 200 is provided with a chamber 210, for example, a cylinder, and a blocking plate 250 formed with a plurality of holes 252 is horizontally provided at an upper end of the chamber 210.
As described above, the decomposition gas discharged from the reaction unit 100 flows in only through the holes 252 of the blocking plate 250, and thus may be accumulated on the inner surface of the tube 240 due to a large amount of powder contained in the decomposition gas during the flow along the passage 242 inside the tube 240.
According to an embodiment, as indicated by a dotted arrow of fig. 3 (a), nitrogen or air supplied to the inflow pipes 230 flows downward inside the respective pipes 240 through the inlets 241 due to strong pressure, thereby preventing powder from accumulating on the inner surfaces of the pipes 240.
Also, in the process that the cooling water is supplied through the cooling water inlet port 220 and discharged through the cooling water outlet port 221, the cooling water flows between the outer surface of the pipe 240 and the inner surface of the chamber 210, and thus can cool the decomposed gas by being in indirect contact with the decomposed gas flowing through the pipe 240, while the cooling water fills the space between the outer surface of the pipe 240 and the inner surface of the chamber 210, and thus can prevent heat from being released to the outside through the outer wall of the chamber 210.
Since the mixing space 214 is formed by shortening the length of the pipe 240 and positioning the lower end of the pipe 240 higher than the lower end of the chamber 210, the decomposition gases discharged from the lower end of the pipe 240 are mixed with each other in the chamber 210 to form a vortex flow, and the flow rate can be reduced.
As a result, in the next step, the powder contained in the decomposition gas falls due to its own weight, and can be sufficiently separated from the decomposition gas and collected.
As described in the present embodiment, the chamber 210 includes two independent chambers 211 and 212, and each chamber 211 and 212 is formed with a separate cooling water inlet and outlet, so that cooling efficiency can be improved.
The decomposed gas of about 500 to 600 ℃ flowing into the powder transfer unit 200 is cooled to a temperature of 150 ℃ or lower, and is discharged to the powder collection unit 300.
A Ni — HP coating layer having high resistance to high-temperature corrosion may be formed on the inner surface of the chamber 210, the inner surface of the tube 240, or the like, which is in contact with the high-temperature decomposition gas.
Fig. 4 (a) to (c) are a vertical sectional view, a horizontal sectional view, and an isometric sectional view, respectively, showing the powder collection unit.
The powder collection unit 300 performs a function of collecting a large amount of powder contained in the decomposed gas, and for this reason, provides a sufficient space capable of sufficiently reducing the flow rate of the decomposed gas flowing in from the powder transfer unit 200 and loading the powder.
The powder collecting unit 300 includes a box-shaped collecting chamber 310, and a gas inlet and a gas outlet are formed on the upper surface of the collecting chamber, respectively, the gas inlet being covered by the base 215 of the powder transfer unit 200, and the gas outlet being covered by communicating with a cooling chamber 410 of a cooling well 400 described later.
The collection chamber 310 is of a double-walled structure, and cooling water flows therebetween in a jacket manner, thereby preventing heat of the decomposed gas from being released from the collection chamber 310 to the outside.
The collecting chamber 310 includes a collecting space 320 communicating with the gas inlet and a collecting space 321 communicating with the gas outlet, and a flow path 322 is formed between the collecting space 320 and the collecting space 321 to connect the collecting spaces 320 and 321.
The flow path 322 is formed in the following manner: partition walls 331, 332, 333 having the same height and a narrower width than the collection chamber 310 are alternately formed at the respective side walls, thereby forming a zigzag structure due to the intervals between the side walls of the collection chamber 310 and the respective partition walls 331, 332, 333, as shown by arrows in fig. 4 (b).
According to such a configuration, the decomposition gas flowing downward from the powder transfer unit 200 collides with the bottom of the collection space 320 to accumulate relatively large-volume powder at the bottom, and then changes its direction to flow horizontally in the flow path 322 to enter the collection space 321.
Since the length of the flow path 322 is increased by the partition walls 331, 332, and 333, the flow velocity of the decomposed gas is decreased by the flow path 322, and the powder contained in the decomposed gas is accumulated on the bottom of the flow path 322 and the wall surfaces of the partition walls 331, 332, and 333 by its own weight.
In addition, a simple PM port 312 may be formed at one side of the collection chamber 310 to remove powder accumulated in the collection space 320.
The surfaces of the inner surface of the collection chamber 310, the wall surfaces of the partition walls 331, 332, and 333, which come into contact with the decomposition gas, may be coated with a Ni — HP coating having high resistance to high-temperature corrosion.
Fig. 5 (a) and (b) are an external view and an isometric sectional view of the cooling well, respectively.
The cooling trap 400 is equipped with a cooling chamber 410, and a gas outflow port 414 is formed at an upper end of the cooling chamber 410.
The cooling chamber 410 is provided with a double-walled structure and is provided at one side with a cooling water inflow port 421 and a cooling water outflow port 431 so that cooling water flowing in through the cooling water inflow port 421 flows out through the cooling water outflow port 431 after filling between the double-walled structures.
A plurality of cooling pipes 420, 430 communicating with the space between the double walls are horizontally arranged inside the cooling chamber 410, and viewing fig. 5 (b), the cooling pipe 420 is arranged at a lower portion to extend in the length direction, and the cooling pipe 430 is arranged at an upper portion to extend in the width direction, so that the cooling pipe 420 and the cooling pipe 430 are perpendicular to each other.
Since each cooling pipe 420, 430 is communicated with the space between the double walls, cooling water flows through each cooling pipe 420, 430.
The decomposed gas discharged from the powder collection unit 300 flows upward inside the cooling chamber 410, passes through between the cooling pipes 420 and 430, and is cooled by indirect contact with the cooling water flowing through the cooling pipes 420 and 430. Also, in the cooling chamber 410, cooling water flows between the double walls in a jacket manner, thereby preventing heat of the decomposed gas from being released from the cooling chamber 410 to the outside.
As described in the present embodiment, the cooling chamber 410 is configured as two independent chambers 411 and 412, and a separate cooling water inlet and outlet is formed in each chamber 411 and 412, thereby improving cooling efficiency.
In particular, the arrangement directions of the cooling pipes 420 and 430 are different in the chambers 411 and 412, so that the temperature of the side surfaces of the chambers 411 and 412 can be prevented from being concentrated on one side.
The decomposed gas of about 150 ℃ that has flowed into the cooling trap 400 is cooled to a temperature of 80 ℃ or lower and discharged to the final cooling unit 500.
A Ni — HP coating layer having high resistance to high-temperature corrosion may be formed on the inner surface of the cooling chamber 410, the outer surface of the cooling pipes 420 and 430, or the like, which is in contact with the high-temperature decomposition gas.
Fig. 6 (a) and (b) are a vertical sectional view and an isometric sectional view, respectively, of the final cooling unit.
Since the cooling effect may be weak mainly for the purpose of collecting the powder except for the cooling trap 400 in the previous step, the final cooling unit 500 performs final cooling before discharging the decomposed gas.
The final cooling unit 500 is provided with a gas inlet 512 and a gas outlet 514 at the upper end and the lower end, respectively, and is provided with a cooling chamber 510 having a cooling water inlet and a cooling water outlet formed on the side thereof.
Blocking plates 550, 560 formed with a plurality of holes 552, 562 adjacent to the upper and lower ends of the cooling chamber 510 are horizontally disposed.
The circular tube 520 is inserted into each of the holes 552 and 562, thereby forming the independently divided passages 522.
According to such a configuration, in the process that the cooling water is supplied through the cooling water inlet and discharged through the cooling water outlet, the cooling water can flow between the outer surface of the pipe 520 and the inner surface of the cooling chamber 510, and thus the decomposed gas flowing upward from the gas inlet 512 toward the gas outlet 514 of the cooling chamber 510 is cooled through the pipe 520 and indirectly contacts with the cooling water, and the cooling water fills the space between the outer surface of the pipe 520 and the inner surface of the cooling chamber 510, thereby preventing heat from being released to the outside through the outer wall of the cooling chamber 510.
The decomposed gas of about 80 ℃ that has flowed into the final cooling unit 500 is cooled to a temperature of 50 ℃ or lower and discharged by the discharge unit.
A Ni coating layer having high corrosion resistance may be formed on a surface of the cooling chamber 510, the cooling pipe 520, or the like, which is in contact with the decomposition gas.
As described above, according to the present invention, when cooling the high-temperature decomposition gas, indirect cooling is performed without using water, so that waste water is not generated, and thus environmental pollution can be prevented.
Further, by applying a plurality of cooling units in sequence, the high-temperature decomposition gas can be efficiently cooled to a desired temperature.
In addition, when a large amount of powder is contained in the high-temperature decomposition gas discharged from the semiconductor powder process, the high-temperature decomposition gas can be cooled and the powder can be efficiently collected.
Although the present invention has been described above mainly with reference to the embodiments thereof, it is obvious that various modifications can be made to the present invention at the level of those skilled in the art. Therefore, the scope of the claims of the present invention should not be construed as being limited to the above-described embodiments, but should be construed according to the scope of the claims.
Claims (8)
1. A plasma scrubbing apparatus, comprising:
a reaction unit which pyrolyzes, ionizes and burns harmful gas containing a large amount of powder discharged through a semiconductor process by high heat of plasma to generate decomposed gas;
a powder transfer unit that primarily cools the decomposed gas and transfers the large amount of powder without clogging;
a powder collecting unit for collecting the powder transferred together with the primary cooled decomposition gas;
a cooling trap for secondary cooling of the decomposed gas after the powder is collected; and
and a final cooling unit for finally cooling the secondarily cooled decomposition gas.
2. The plasma scrubbing apparatus of claim 1,
the powder transfer unit includes:
a cylindrical chamber;
a blocking plate horizontally disposed at an upper end of the chamber and formed with a plurality of holes;
a plurality of tubes having one end fixed to each hole of the blocking plate to form independently divided passages through which the decomposition gas of high temperature passes,
wherein an inflow pipe for nitrogen or air pulses is provided adjacent to the upper end of the pipe.
3. The plasma scrubbing apparatus of claim 2,
a large amount of powder contained in the decomposition gas of high temperature is pushed downward by the nitrogen gas or air supplied by the pulse.
4. The plasma scrubbing apparatus of claim 2,
the lower ends of the tubes are located at a higher position than the lower end of the chamber by forming the lengths of the tubes to be short, thereby forming a mixing space that mixes the decomposed gases discharged from the lower ends of the respective tubes with each other and forms a vortex.
5. The plasma scrubbing apparatus of claim 1,
the powder collection unit is provided with: a collecting chamber having a gas inlet and a gas outlet formed on an upper surface thereof, the gas inlet being covered by the powder transfer unit, the gas outlet being covered by being communicated with the cooling well,
the collection chamber is of double-walled construction, between which cooling water flows, and is equipped with: the first collecting space is communicated with the gas inflow port; a second collection space in communication with the gas flow outlet; and a flow path connecting the first and second collecting spaces between the first and second collecting spaces,
the flow path is arranged with a plurality of partition walls, thereby forming a zigzag structure by a space between the sidewall of the collection chamber and the partition walls.
6. The plasma scrubbing apparatus of claim 1,
the cooling trap includes: a cooling chamber provided in a double-walled structure and provided at a side with a cooling water inlet and a cooling water outlet connected to a space between the double walls,
a plurality of cooling pipes communicating with the space between the double walls are horizontally arranged inside the cooling chamber such that the decomposition gas flowing in the vertical direction is in contact with the cooling pipes.
7. The plasma scrubbing apparatus of claim 6,
the cooling pipes arranged in the lower part of the cooling chamber and the cooling pipes arranged in the upper part are perpendicular to each other.
8. The plasma scrubbing apparatus of claim 1,
the final cooling unit includes: a cooling chamber having a gas inlet and a gas outlet provided at an upper end and a lower end thereof, respectively, and a cooling water inlet and a cooling water outlet formed at a side surface thereof;
a blocking plate horizontally disposed adjacent to upper and lower ends of the cooling chamber and formed with a plurality of holes, respectively; and
and a cooling pipe having both ends fixed to the respective holes to form independently divided passages.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2019-0047278 | 2019-04-23 | ||
| KR1020190047278A KR102193416B1 (en) | 2019-04-23 | 2019-04-23 | Plasma scrubber apparatus |
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| Publication Number | Publication Date |
|---|---|
| CN111821827A true CN111821827A (en) | 2020-10-27 |
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| CN201910729838.7A Pending CN111821827A (en) | 2019-04-23 | 2019-08-08 | Plasma washing device |
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| KR (1) | KR102193416B1 (en) |
| CN (1) | CN111821827A (en) |
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| KR20160024234A (en) * | 2014-08-25 | 2016-03-04 | 주식회사 지앤비에스엔지니어링 | Scrubber for treating processing waste gas |
| JP2016159205A (en) * | 2015-02-27 | 2016-09-05 | 三菱日立パワーシステムズ環境ソリューション株式会社 | So3 removal device, exhaust gas treatment system and so3 removal method |
| CN207899113U (en) * | 2018-01-29 | 2018-09-25 | 浙江蓝太能源工程有限公司 | Water-cooled deduster |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20200123995A (en) | 2020-11-02 |
| KR102193416B1 (en) | 2020-12-21 |
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