KR101761725B1 - Processing Apparatus for Semiconductor Process's By-producr - Google Patents
Processing Apparatus for Semiconductor Process's By-producr Download PDFInfo
- Publication number
- KR101761725B1 KR101761725B1 KR1020150150334A KR20150150334A KR101761725B1 KR 101761725 B1 KR101761725 B1 KR 101761725B1 KR 1020150150334 A KR1020150150334 A KR 1020150150334A KR 20150150334 A KR20150150334 A KR 20150150334A KR 101761725 B1 KR101761725 B1 KR 101761725B1
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- KR
- South Korea
- Prior art keywords
- heating
- unit
- cooling
- process gas
- main body
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 title abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 59
- 239000000843 powder Substances 0.000 claims abstract description 30
- 238000001816 cooling Methods 0.000 claims abstract description 29
- 239000000498 cooling water Substances 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 239000006227 byproduct Substances 0.000 abstract description 21
- 230000000694 effects Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 38
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- 235000010323 ascorbic acid Nutrition 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 235000012736 patent blue V Nutrition 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
- H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
- H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
- H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
- H01L2021/60187—Isostatic pressure, e.g. degassing using vacuum or pressurised liquid
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
An apparatus for processing semiconductor process by-products is disclosed. An apparatus for processing semiconductor process byproducts according to the present invention is characterized by comprising: a main body in which an inlet for introducing a process gas is formed on an upper portion, a space is formed in the upper portion, A first heating unit formed on an inner upper side of the main body and configured to communicate with the inlet port to heat and transfer the introduced process gas; A cooling unit which is formed inside the main body and includes a collecting plate for cooling the process gas discharged from the first heating unit to fix the powder and a cooling tube surrounding the collecting plate; A second heating unit formed at an inner lower portion of the main body and heating the process gas formed outside the outlet, A heat source supply unit for supplying a heat source to the first and second heating units; And a cooling water supply unit for supplying cooling water to the cooling unit.
According to the present invention, a heating member having an enhanced heating function is provided on the inflow side to uniformly distribute the inflow powder gas in a state of being sufficiently heated to a high temperature and to be transferred to the cooler unit side. Especially, By providing the heating member, it is possible to increase the activity of the gas so that the powder mixed in a small amount into the discharged gas is not fixed to the discharge line, thereby improving the powder collecting efficiency and significantly reducing the occurrence rate of the discharge line failure.
Description
BACKGROUND OF THE
Generally, a manufacturing process for manufacturing a semiconductor device is performed at a high temperature using various process gases in a process chamber in which a specific process is performed. During the process, various reaction materials and unreacted materials not participating in the process Is produced as a by-product of the manufacturing process.
Process by-products often contain large quantities of toxic substances harmful to the environment. (SiH 4 ), ammonia (NH 3 ), nitrous oxide (N 2 O), nitrogen monoxide (NO 3 ), and nitric acid (NO 3 ) used in the unit processes of the semiconductor manufacturing process such as chemical vapor deposition process, ion implantation process, ), Phosphoric acid (PH 3 ), and ascorbic acid (AsH) cause various environmental pollution due to toxicity to human body, corrosiveness to metal, and flammability.
Accordingly, the reaction by-products are discharged from the process chamber by a vacuum pump, filtered by a purifying system such as a scrubber, and discharged into the atmosphere.
The reaction by-products discharged through the vacuum pump are connected to the purification system through an exhaust line.
At this time, the exhaust line is arranged in various shapes depending on the facility environment such as foot print of the semiconductor manufacturing facility or required cleanliness. At this time, if the vacuum pump and the purifying system are physically spaced apart and satisfy various spatial constraints, the exhaust line is broken by the plurality of connecting portions and the flow path of the reaction byproduct is changed.
Specifically, a wafer is fixed in a chamber in a vacuum state, and a chamber is formed in an appropriate working environment such as a low pressure, atmospheric pressure, or plasma, and then a source gas is introduced into the chamber, So as to be deposited. The byproducts generated after the deposition are discharged to the outside through the exhaust line by using a vacuum pump connected to the vacuum pipe.
A vacuum pump 300 is installed at one side of a vacuum pipe 200 connected to the chamber 100 to generate a constant vacuum pressure and a primary screw burr 400 and a secondary screw burr 500 are installed, The process gas was purified in turn and then discharged to the atmosphere.
Domestic Application 10-2012-0012023 discloses "an apparatus and a method for treating a gas powder for a semiconductor processing system ".
In the prior art, a reaction gas inlet line 113; A heating block 117 provided in the reaction chamber 111 for raising the temperature in the reaction chamber 111; And a cooling block 119 in which WF 6 and powder formed in response to the reaction of the reaction gas are collected in the reaction chamber 111.
In the conventional technology, however, even if the powder is collected in the cooling block, a small amount of the powder is left to be discharged, and the powder contained in the discharged gas is adhered to the inner wall of the discharge line or the valve provided at the discharge port, there was.
SUMMARY OF THE INVENTION The present invention is conceived to solve the problems of the prior art described above, and it is an object of the present invention to provide a heating member having an enhanced heating function on the inflow side to uniformly distribute the inflow powder gas in a state of being sufficiently heated to a high temperature, The auxiliary heating member is provided on the outflow side so as to have a reheating function so that the activity of the gas can be increased so that the powder mixed in a small amount into the discharged gas is not fixed to the discharge line, Which is capable of significantly reducing the failure rate of the semiconductor process by-products.
According to an aspect of the present invention, there is provided a plasma processing apparatus, comprising: a main body having an inlet port through which a process gas flows, an inner space formed therein, A first heating unit formed on an inner upper side of the main body and configured to communicate with the inlet port to heat and transfer the introduced process gas; A cooling unit which is formed inside the main body and includes a collecting plate for cooling the process gas discharged from the first heating unit to fix the powder and a cooling tube surrounding the collecting plate; A second heating unit formed at an inner lower portion of the main body and heating the process gas formed outside the outlet, A heat source supply unit for supplying a heat source to the first and second heating units; And a cooling water supply unit for supplying cooling water to the cooling unit.
Wherein the first heating unit comprises: a housing having a coupling hole formed therein for coupling the inlet port, a space formed in the upper plate, and a discharge port formed on at least one side surface of the housing; And a heating tube formed inside the housing and corresponding to the coupling hole and formed in a coil shape.
And a heat dissipation member having a plurality of metal thin plates disposed at the discharge port and having slits formed between the thin metal plates to allow a process gas to pass therethrough.
And the second heating part includes a coil-shaped heating tube wound around the outer circumferential surface of the outlet and supplied with a heating source.
According to the present invention, there is provided a heating member having an enhanced heating function on the inflow side so that the inflow powder gas can be uniformly distributed in a state of being sufficiently heated to a high temperature and transferred to the cooler unit side, It is possible to increase the activity of the gas so that the powder mixed in a small amount into the discharged gas does not adhere to the discharge line, thereby improving the powder collecting efficiency and significantly reducing the failure occurrence rate of the discharge line .
1 is a perspective view showing a processing apparatus of a semiconductor process by-product according to the present invention,
2 is a cross-sectional perspective view showing a processing apparatus of a semiconductor process by-product according to the present invention,
3 is an exploded perspective view showing a processing apparatus of a semiconductor process by-product according to the present invention,
4 is an enlarged front view of a main portion of a processing apparatus for semiconductor processing by-products according to the present invention,
5 is a graph showing gas distribution in the processing apparatus of semiconductor processing by-products according to the present invention,
6 is a view showing distribution of powder particles in a processing apparatus of a semiconductor process by-product according to the present invention.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. It does not mean anything.
In addition, the sizes and shapes of the components shown in the drawings may be exaggerated for clarity and convenience of explanation, and the terms defined specifically in consideration of the configuration and operation of the present invention may vary depending on the intention or custom of the user, operator It should be noted that the definitions of these terms should be made on the basis of the contents throughout this specification.
2 is a cross-sectional perspective view of an apparatus for processing a byproduct of a semiconductor process according to the present invention; and Fig. 3 is a cross-sectional view of a semiconductor processing by-product according to the present invention. Fig. Fig. 4 is an enlarged front view of a main portion of a processing apparatus for a semiconductor processing by-product according to the present invention. Fig.
As shown in FIGS. 1 to 4, an apparatus for processing semiconductor process byproducts according to the present invention includes an
The
The
A
The process gas introduced through the
The
The
A plurality of
On the other hand, the process gas introduced through the
The first heating unit (3)
A housing (32) having a coupling hole (320) to which the inlet (22) is coupled and having a space formed therein and having an outlet (322) at least at one side thereof;
And a
A plurality of metal
Meanwhile, according to the embodiment of the present invention, the
The
In the
The cooled process gas is re-heated in the
Preferably, the heating temperature of the
Accordingly, the powder is activated at a temperature of at least 80 to 90 DEG C by discharging the process gas remaining in a small amount after the powder is collected in the
Hereinafter, the operation of the present invention will be described.
As shown in Fig. 5, the process gas (the line which is seen in sky blue in the drawing tracks the flow of the process gas) is drawn into the
The powder contained in the process gas is fixed to the
As shown in Fig. 6, the powder is mainly collected in the outer periphery (in the drawing, the pie is seen as a yellow dot).
After the powder is removed, the process gas is discharged to the
Since the powder contained in the process gas discharged to the
Although the present invention has been described in connection with the above-mentioned preferred embodiments, it will be apparent to those skilled in the art that various modifications and variations can be made without departing from the spirit and scope of the invention, It is obvious that the claims fall within the scope of the claims.
2: Main body 3: First heating part
4: cooling section 5: second heating section
22: inlet 24: outlet
32: Housing 34: Heating tube
35: Exhausting member 42:
44: cooling tube
Claims (5)
A first heating unit formed on an inner upper side of the main body and configured to communicate with the inlet port to heat and transfer the introduced process gas;
A cooling unit which is formed inside the main body and includes a collecting plate for cooling the process gas discharged from the first heating unit to fix the powder and a cooling tube surrounding the collecting plate;
A second heating unit formed at an inner lower portion of the main body and heating the process gas formed outside the outlet,
A heat source supply unit for supplying a heat source to the first and second heating units;
And a cooling water supply unit for supplying cooling water to the cooling unit,
The first heating unit
A housing in which a coupling hole to which an inlet port is coupled is formed in an upper plate, a space is formed in the upper plate, and an outlet is formed at least at one side of the housing;
And a heating tube formed inside the housing and corresponding to the coupling hole,
In the discharge port,
And a heat dissipating member having a plurality of metal thin plates and slits formed between the thin metal plates to allow the process gas to pass therethrough,
Wherein the collecting plate of the cooling section comprises:
A plurality of air vents are formed, a flat plate-like shape is formed, and one end is bent to form a bent portion,
The second heating unit
And a heating tube which is wound around an outer circumferential surface of the outlet and is supplied with a heating source,
Wherein the second heating unit reheats the process gas cooled by the cooling unit to activate the gas so that the powder is not adhered to the discharge pipe and the valve flow.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150150334A KR101761725B1 (en) | 2015-10-28 | 2015-10-28 | Processing Apparatus for Semiconductor Process's By-producr |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150150334A KR101761725B1 (en) | 2015-10-28 | 2015-10-28 | Processing Apparatus for Semiconductor Process's By-producr |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170049225A KR20170049225A (en) | 2017-05-10 |
| KR101761725B1 true KR101761725B1 (en) | 2017-08-04 |
Family
ID=58743670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150150334A KR101761725B1 (en) | 2015-10-28 | 2015-10-28 | Processing Apparatus for Semiconductor Process's By-producr |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101761725B1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200123995A (en) * | 2019-04-23 | 2020-11-02 | 유니셈(주) | Plasma scrubber apparatus |
| KR102279724B1 (en) | 2020-02-28 | 2021-07-21 | 이스텍 주식회사 | Piping blockage reduction device using plasma |
| US11462422B2 (en) | 2019-10-30 | 2022-10-04 | Milaebo Co., Ltd. | Apparatus having cooling line for collecting by-product in semiconductor manufacturing process |
| US11562943B2 (en) | 2019-10-31 | 2023-01-24 | Milaebo Co., Ltd. | Apparatus for collecting by-product in semiconductor manufacturing process |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102209662B1 (en) * | 2019-07-19 | 2021-02-01 | (주)제이솔루션 | Trapping apparatus for cobalt-carbon gas |
| CN112546798B (en) * | 2019-09-25 | 2023-01-13 | 未来宝株式会社 | Semiconductor engineering reaction byproduct collecting device with cooling flow path |
| CN112546799B (en) * | 2019-09-25 | 2023-01-17 | 未来宝株式会社 | Semiconductor engineering reaction byproduct collecting device with cooling flow path |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100717837B1 (en) * | 2006-11-21 | 2007-05-14 | 주식회사 이노시스템 | Apparatus for collecting chemical compounds from semiconductor processing |
| KR100768882B1 (en) * | 2007-02-12 | 2007-10-22 | 주식회사 엠아이 | Apparatus for trapping semiconductor residual product |
-
2015
- 2015-10-28 KR KR1020150150334A patent/KR101761725B1/en active IP Right Grant
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100717837B1 (en) * | 2006-11-21 | 2007-05-14 | 주식회사 이노시스템 | Apparatus for collecting chemical compounds from semiconductor processing |
| KR100768882B1 (en) * | 2007-02-12 | 2007-10-22 | 주식회사 엠아이 | Apparatus for trapping semiconductor residual product |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200123995A (en) * | 2019-04-23 | 2020-11-02 | 유니셈(주) | Plasma scrubber apparatus |
| KR102193416B1 (en) | 2019-04-23 | 2020-12-21 | 유니셈 주식회사 | Plasma scrubber apparatus |
| US11462422B2 (en) | 2019-10-30 | 2022-10-04 | Milaebo Co., Ltd. | Apparatus having cooling line for collecting by-product in semiconductor manufacturing process |
| US11562943B2 (en) | 2019-10-31 | 2023-01-24 | Milaebo Co., Ltd. | Apparatus for collecting by-product in semiconductor manufacturing process |
| KR102279724B1 (en) | 2020-02-28 | 2021-07-21 | 이스텍 주식회사 | Piping blockage reduction device using plasma |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170049225A (en) | 2017-05-10 |
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