CN111785679A - Semiconductor device and method for manufacturing the same - Google Patents
Semiconductor device and method for manufacturing the same Download PDFInfo
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- CN111785679A CN111785679A CN202010742829.4A CN202010742829A CN111785679A CN 111785679 A CN111785679 A CN 111785679A CN 202010742829 A CN202010742829 A CN 202010742829A CN 111785679 A CN111785679 A CN 111785679A
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 159
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 159
- 239000010703 silicon Substances 0.000 claims abstract description 159
- 239000012212 insulator Substances 0.000 claims abstract description 38
- 230000008719 thickening Effects 0.000 claims abstract description 21
- 230000000694 effects Effects 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 84
- 230000003287 optical effect Effects 0.000 claims description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 39
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 27
- 239000002210 silicon-based material Substances 0.000 claims description 23
- 239000000377 silicon dioxide Substances 0.000 claims description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 15
- 238000002360 preparation method Methods 0.000 claims description 13
- 239000011241 protective layer Substances 0.000 claims description 10
- 238000004943 liquid phase epitaxy Methods 0.000 claims description 4
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 4
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 43
- 239000000463 material Substances 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
A semiconductor device and a method for manufacturing the same, comprising the steps of: providing a silicon-on-insulator wafer comprising top layer silicon; forming a plurality of silicon photo-devices in the top layer of silicon, the plurality of silicon photo-devices comprising lasers; and thickening the top silicon of the area where the laser is positioned so as to meet the requirement of the mode matching effect on the thickness of the top silicon.
Description
Technical Field
The invention relates to the field of semiconductor preparation, in particular to a semiconductor device and a preparation method thereof.
Background
The silicon optical process on the silicon-on-insulator wafer is provided with a set of relatively complete optical component system, including various passive devices, electro-optical modulators, photoelectric detectors and the like. However, silicon as an indirect bandgap material cannot emit light directly, which makes the integration scheme of silicon-based light sources one of the important challenges for the development of silicon-based optoelectronic technology.
In the prior art, lasers are often fabricated using silicon photofabrication on silicon-on-insulator wafers. However, when the laser is manufactured using a silicon on insulator wafer, high manufacturing costs are required, which is disadvantageous to popularization of the laser.
Disclosure of Invention
The invention provides a semiconductor device and a preparation method thereof, which can reduce the preparation cost of a laser.
In order to solve the above problem, the following provides a semiconductor device comprising: a silicon-on-insulator wafer; a silicon optical device formed on top silicon of the silicon-on-insulator wafer, the silicon optical device comprising a laser; and the thickened region of the monocrystalline silicon material is formed on the upper surface of the laser so as to thicken the laser, so that the requirement of the mode matching effect on the thickness of the top layer silicon is met.
Optionally, the method further includes: and the protective layer covers the silicon optical device and the thickened area of the monocrystalline silicon material.
Optionally, the protective layer comprises a silicon dioxide layer.
Optionally, the thickness of the thickened region of single crystal silicon material is at least 180 nm.
In order to solve the above problem, the following also provides a method for manufacturing a semiconductor device, including the steps of: providing a silicon-on-insulator wafer comprising top layer silicon; forming a plurality of silicon photo-devices in the top layer of silicon, the plurality of silicon photo-devices comprising lasers; and thickening the top silicon of the area where the laser is positioned by adopting a monocrystalline silicon material so as to meet the requirement of the mode matching effect on the thickness of the top silicon.
Optionally, before thickening the top silicon of the region where the laser is located, forming a dielectric layer covering the upper surfaces of the plurality of silicon optical devices.
Optionally, before thickening the top silicon layer in the region where the laser is located, a step of removing the dielectric layer corresponding to the region needing to be thickened is further included.
Optionally, the dielectric layer includes a silicon dioxide layer covering the surfaces of the plurality of silicon optical devices, and the silicon dioxide layer corresponding to the region to be thickened is removed before the top silicon of the region where the laser is located is thickened.
Optionally, after the top silicon of the region where the laser is located is thickened, the surface of the thickened region is subjected to secondary etching forming.
Optionally, the plurality of silicon optical devices further include one or more of a modulator and a waveguide.
Optionally, the laser includes a laser waveguide and a laser grating.
Optionally, the top layer silicon of the region where the laser is located forms a single crystal silicon material by at least one of vapor phase epitaxy, liquid phase epitaxy, molecular beam epitaxy, chemical vapor deposition, physical vapor deposition, and atomic layer deposition to realize thickening.
Optionally, after performing secondary etching molding on the surface of the thickened region, the method further includes the following steps: and forming a protective layer covering the silicon optical device.
According to the semiconductor device and the preparation method thereof, the top silicon of the area where the laser is located is thickened by adopting the monocrystalline silicon material, so that natural silicon oxide is prevented from being generated at the junction of the two silicon when the top silicon is thickened by using polycrystalline silicon and amorphous silicon, the laser can be prepared by using the thin top silicon, the silicon-on-insulator wafer with the thicker top silicon does not need to be prepared specially, the preparation difficulty of the silicon-on-insulator wafer is reduced, and the preparation cost of the laser is reduced. In addition, the preparation method can also reduce the etching times of other silicon optical devices except the laser in the process of preparing the laser, ensure the surface smoothness of other silicon optical devices and prevent transmission loss caused by rough surfaces of other silicon optical devices.
Drawings
Fig. 1 is a schematic flow chart illustrating steps of a semiconductor device and a method for manufacturing the same according to an embodiment of the present invention.
Fig. 2 to 8 are schematic structural diagrams formed by corresponding steps of the semiconductor device and the manufacturing method thereof according to an embodiment.
Detailed Description
It has been found that the reason why the manufacturing cost is high when the silicon-on-insulator wafer is used to manufacture the laser is that the silicon optical device used in the laser has a large thickness, usually above 400nm, to achieve the effect of mode matching, while the top silicon thickness of the silicon-on-insulator wafer commonly used in the prior art is usually about 200nm, so that the silicon-on-insulator wafer needs to be additionally manufactured to manufacture the laser, which increases the production cost required for manufacturing the laser.
Moreover, the difficulty in manufacturing the silicon-on-insulator wafer increases with the increase of the thickness of the top layer silicon, so that when a silicon optical device for a laser related device is prepared, the difficulty in production increases due to the increase of the thickness of the top layer silicon, so that the production yield is reduced, and the production cost of the laser is further increased.
A semiconductor device and a method for fabricating the same are provided below, and further explanation and explanation are provided in conjunction with the drawings.
Referring to fig. 1 to 8, fig. 1 is a schematic flow chart illustrating steps of a semiconductor device and a method for manufacturing the same according to an embodiment of the present invention, and fig. 2 to 8 are schematic structural diagrams correspondingly formed in steps of the semiconductor device and the method for manufacturing the same according to an embodiment of the present invention.
In this embodiment, there is provided a semiconductor device including: a silicon-on-insulator wafer 100; a silicon photo device (including all components shown by reference numerals 104, 105, 106) formed in the top silicon 101 of the silicon-on-insulator wafer 100, the silicon photo device including a laser 106; the thickened region of monocrystalline silicon material is formed on the upper surface of the laser 106 to thicken the laser 106, so as to meet the requirement of the mode matching effect on the thickness of the top layer silicon 101.
In this embodiment, since the top silicon 101 in the region where the laser 106 is located is thickened by using the thickened region of the single crystal silicon material, the laser 106 can be prepared by using the thin top silicon 101 without specially preparing the silicon-on-insulator wafer 100 having the thicker top silicon 101, which can effectively reduce the preparation cost required when the semiconductor device is used to prepare the laser and reduce the cost for preparing the silicon-on-insulator wafer 100 for the laser.
In fact, besides the laser 106, other active devices such as modulators, detectors, etc. have higher thickness requirement on the top layer silicon 101, and therefore, in some embodiments, the silicon optical device further includes a modulator, a detector, etc. and the thickened region of the single-crystal silicon material also forms the upper surface of the modulator, the detector, etc. to realize the thickening of the modulator, the detector, etc.
In one embodiment, the top silicon 101 of the silicon-on-insulator wafer 100 is a layer of single crystal silicon used to form silicon optical devices, the middle layer is a layer of insulating silicon dioxide, and the support substrate 103 is used to provide mechanical support for the top silicon 101 and the middle layer.
In this embodiment, when the laser 106 is thickened, a layer of single crystal silicon is selectively epitaxially grown on the upper surface of the top silicon 101. The crystal orientation of the epitaxially grown silicon for thickening is the same as that of the top layer silicon 101, and lattice mismatch can be effectively prevented.
In other embodiments, the insulating layer 102 of other materials may be provided. In this embodiment, when the thickened region is made of single crystal silicon material, it is possible to avoid the natural silicon oxide generated at the interface between the two types of silicon when the top layer silicon 101 is thickened by using polysilicon and amorphous silicon.
In a specific embodiment, the method further comprises the following steps: a protective layer 110 covering the silicon optical device and the thickened region of monocrystalline silicon material. In one embodiment, the protective layer 110 comprises a silicon dioxide layer. In practice, the specific material of the protective layer 110 may also be selected as desired.
In one embodiment, the thickened region of single crystal silicon material has a thickness of at least 180 nm. This is because the top silicon thickness of a typical silicon-on-insulator wafer is about 220nm, and the thickness of a typical laser is required to be 400nm or more. When a silicon optical device comprising a laser is prepared by using a common silicon-on-insulator wafer, the thickened region of the monocrystalline silicon material is required to be more than 180nm so as to achieve the effect of mode matching, so that the laser transmission effect is better and the transmission loss is smaller.
In this embodiment, there is provided a method for manufacturing a semiconductor device, including the steps of: s11 providing a silicon-on-insulator wafer 100, the silicon-on-insulator wafer 100 comprising top silicon 101, please refer to fig. 2; s12 forming a plurality of silicon photo devices (including all components shown at 104, 105, 106) in the top silicon 101, including the laser 106, see fig. 3; s13, using single crystal silicon material to thicken the top silicon 101 in the region where the laser is located, so as to achieve the requirement of the pattern matching effect on the thickness of the top silicon 101, please refer to fig. 7.
In this embodiment, in the method for manufacturing a semiconductor device, the top layer silicon 101 in the region where the laser 106 is located is thickened by using a single crystal silicon material, and the laser 106 can be manufactured by using a thin layer of the top layer silicon 101 without specially manufacturing the silicon-on-insulator wafer 100 having a thicker top layer silicon 101, which can effectively reduce the manufacturing cost required when the semiconductor device is used to manufacture a laser and reduce the cost for manufacturing the silicon-on-insulator wafer 100 for a laser.
Moreover, when the monocrystalline silicon material is adopted, the natural silicon oxide generated at the junction of the two kinds of silicon when the top layer silicon 101 is thickened by using polycrystalline silicon and amorphous silicon can be avoided.
Moreover, it has been found that the smoothness of the surface of the silicon optical device greatly affects the light transmission efficiency of the silicon optical device. A surface roughness of 2nm for a silicon optical device will result in a waveguide transmission loss of 2 to 3 dB/cm. In this embodiment, since the laser is prepared by using the silicon-on-insulator wafer 100 having the thin top layer silicon 101, when the laser 106 is realized by etching, the number of times of etching other silicon optical devices except the laser 106 can be reduced, the surface smoothness of the other silicon optical devices is ensured, and transmission loss caused by rough surfaces of the other silicon optical devices is prevented.
In a more preferred embodiment, before thickening the top silicon 101 in the region of the laser, a dielectric layer 107 is further formed to cover the upper surfaces of the silicon optical devices. The dielectric layer 107 can play a role in protecting other silicon optical devices, and can prevent thickening of the silicon optical devices, the used material layer also covers the upper surfaces of the other silicon optical devices, so that the smoothness of the surfaces of the other silicon optical devices is influenced by multiple times of etching in the process of forming the other silicon optical devices.
Referring to fig. 2, the top silicon 101 and the supporting substrate 103 of the soi wafer 100 are tightly bonded, with an insulating layer 102 formed therebetween to separate the top silicon 101 and the supporting substrate 103. The insulating layer 102 can realize full dielectric isolation between the top silicon 101 and the supporting substrate 103, so as to reduce parasitic capacitance and improve operation speed. Also, since the parasitic capacitance is reduced, the leakage current can also be reduced, reducing the power consumption of the devices implemented on the top silicon 101. In addition, when the silicon-on-insulator wafer 100 is used for realizing a silicon photo process, latch-up effect can be eliminated, interference of pulse current in the supporting substrate 103 on the top layer silicon 101 can be inhibited, soft errors and the like can be reduced, and the silicon photo process is compatible with the existing silicon process.
In one embodiment, the top silicon 101 of the silicon-on-insulator wafer 100 is a layer of single crystal silicon used to form silicon optical devices, the middle layer is a layer of insulating silicon dioxide, and the support substrate 103 is used to provide mechanical support for the top silicon 101 and the middle layer. In other embodiments, the insulating layer 102 of other materials may be provided.
In one embodiment, the top layer silicon 101 has a thickness of less than 230 nm. This can effectively reduce the difficulty of manufacturing the silicon-on-insulator wafer 100. In fact, the top silicon 101 of the conventional soi wafer 100 produced in the prior art has a thickness of 220nm, which meets the requirement, so that the conventional soi wafer 100 in the prior art can be directly used to manufacture the semiconductor device without specially manufacturing some soi wafers 100 having the ultra-thick top silicon 101.
In this embodiment, after thickening, the laser is able to reach the thickness required for mode matching. Generally, a thickness of about 400nm is required for a laser to achieve mode matching, and the thickness is taken to be a thickness perpendicular to the surface of the top silicon 101. Referring to fig. 2 and 3, the top silicon 101 in fig. 2 has a thickness d1, and before thickening, the laser 106 has a thickness d2, and d2 is equal to or less than d 1. After thickening, the thickness of the laser 106 is sufficient to achieve the requirements of mode matching of the laser 106.
In this embodiment, since the top layer silicon 101 in the region where the laser is located is thickened, when the laser is manufactured, there is no need to use the silicon-on-insulator wafer 100 with the thicker top layer silicon 101, and there is no need to perform multiple etching on the top layer silicon 101 of the silicon-on-insulator wafer 100 with the thicker top layer silicon 101 to realize the manufacture of the laser, so that smoothness of the surface of other silicon optical devices with smaller thickness can be ensured.
In this embodiment, before the step of thickening the top silicon 101, a step of removing the dielectric layer 107 corresponding to the region to be thickened is further included. This is because the shape of the structure formed after thickening is likely to be inconsistent with the shape actually required for the laser.
In one embodiment, after the top silicon 101 in the region where the laser is located is thickened, the surface of the thickened region 109 is subjected to secondary etching.
In a specific embodiment, the step of performing the secondary etching molding includes at least one of dry etching or wet etching.
In a specific embodiment, after performing the secondary etching forming on the surface of the thickened region 109, the method further includes the following steps: a protective layer 110 is formed covering the silicon photo device. Please refer to fig. 8. In the embodiment shown in fig. 8, the silicon dioxide layer is used as the protection layer 110, so that the protection layer 110 and the dielectric layer 107 are made of the same material, and light is not refracted when propagating between the protection layer 110 and the dielectric layer 107.
In a specific embodiment, the dielectric layer 107 includes a silicon dioxide layer covering the surfaces of the silicon optical devices, and before the top silicon 101 in the region where the laser is located is thickened, the silicon dioxide layer corresponding to the region 109 to be thickened is removed. In a specific embodiment, the silicon dioxide layer corresponding to the region needing to be thickened is removed by etching.
Specifically, when the silicon dioxide layer is removed by etching, a mask layer is formed on the upper surface of the silicon dioxide layer, the mask layer is patterned, the region needing to be thickened is exposed out of the mask layer, and then the silicon dioxide layer in the region can be etched by a dry method or a wet method until the upper surface of the region needing to be thickened is exposed.
In some other embodiments, other materials may be disposed as the dielectric layer 107 according to the requirement.
Referring to fig. 4 and 5, in fig. 4, a situation in which the upper surfaces of the plurality of silicon optical devices are covered with a dielectric layer 107 is illustrated. The dielectric layer 107 covers the upper surfaces of all the silicon optical devices, so that the silicon optical devices can be effectively protected. In fig. 5, a situation of removing the silicon dioxide layer corresponding to the region 109 to be thickened is described. Here, a through hole is opened in the upper surface of the silicon dioxide layer, and the upper surface of the laser 106 is exposed to the through hole. The size of the via is related to the size of the area of the laser that needs to be thickened.
Referring to fig. 6 to 7, fig. 6 is a schematic structural diagram illustrating a device formed after thickening the top silicon 101 in the region corresponding to the laser. Fig. 7 depicts a schematic structural diagram of a device formed after performing secondary etching molding on a structure formed after thickening.
In one embodiment, the laser includes a laser waveguide and a laser grating. In practice, the laser may comprise other configurations.
In one embodiment, the laser waveguides and the laser gratings have the same thickness in a direction perpendicular to the surface of the top silicon 101, and in some other embodiments, the laser waveguides and the laser gratings have different thicknesses in a direction perpendicular to the surface of the top silicon 101. This can be set according to actual needs.
In one embodiment, the thickening is achieved by forming a single crystal silicon material in the top silicon 101 in the region of the laser by at least one of vapor phase epitaxy, liquid phase epitaxy, molecular beam epitaxy, chemical vapor deposition, physical vapor deposition, and atomic layer deposition. It should be noted that, when the single crystal silicon material is formed by vapor phase epitaxy, liquid phase epitaxy, and molecular beam epitaxy, the single crystal silicon has the same crystal orientation as the top layer silicon 101, and thus lattice mismatch can be better prevented.
In a specific embodiment, the plurality of silicon optical devices further comprises one or more of a modulator, a waveguide. The thickness of other silicon optical devices except the laser in the direction vertical to the surface of the top layer silicon 101 is less than or equal to the thickness of the top layer silicon 101. Please refer to fig. 2. In the embodiment shown in fig. 2, the thickness of the modulator 105 and the waveguide 104 is less than 220nm, which is suitable for the thickness of the top silicon 101 with the conventional thickness of 220nm, so that the corresponding region of the modulator 105 and the waveguide 104 does not need to be additionally thickened.
Turning to the following examples, steps in forming a silicon-based iii-v laser using the semiconductor device of this embodiment are shown. The semiconductor device formed in this embodiment can be used to fabricate a iii-v laser.
The III-V group compound is used as a traditional photoelectric application material, has excellent luminous performance, but the mismatch of the lattice constant of the III-V material and silicon is large, the III-V material obtained by direct epitaxial growth on the silicon has many defects and poor quality, and a high-performance laser meeting the requirement is difficult to prepare. Therefore, the mainstream means in the market at present is to realize the integration of the iii-v laser and the silicon wafer by a heterogeneous bonding and off-chip packaging method. However, the off-chip light source package requires high precision alignment coupling, and in contrast, the heterogeneous bonding integration can effectively reduce the package cost and improve the yield and reliability, which is the key direction of research and development of companies in recent years. The back heterogeneous bonding integration method of the III-V laser is represented by CEA-Leti company, and can be well compatible with the process of the front and rear sections of the original silicon light.
In this embodiment, the method comprises the following steps:
(1) the preparation of the silicon optical device is completed on the silicon-on-insulator wafer 100 by using the preparation method in the embodiment of the invention;
(2) directly bonding the silicon-on-insulator wafer 100 which completes the preparation of the silicon optical device with the front side of a silicon wafer carrier wafer, and thinning the back side of the silicon-on-insulator wafer 100 to the top silicon 101 where the silicon optical device is located;
(3) directly bonding the back surface of the thinned silicon-on-insulator wafer 100 with a III-V material epitaxial wafer, and carrying out patterning treatment on the III-V material epitaxial wafer to form a laser electrode;
(4) the silicon optics on the silicon-on-insulator wafer 100 are connected by way of backside vias.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to limit the present invention, and those skilled in the art can make variations and modifications of the present invention without departing from the spirit and scope of the present invention by using the methods and technical contents disclosed above.
Claims (13)
1. A semiconductor device, comprising:
a silicon-on-insulator wafer;
a silicon optical device formed on top silicon of the silicon-on-insulator wafer, the silicon optical device comprising a laser;
and the thickened region of the monocrystalline silicon material is formed on the upper surface of the laser so as to thicken the laser, so that the requirement of the mode matching effect on the thickness of the top layer silicon is met.
2. The semiconductor device according to claim 1, further comprising:
and the protective layer covers the silicon optical device and the thickened area of the monocrystalline silicon material.
3. The semiconductor device according to claim 1, wherein the protective layer comprises a silicon dioxide layer.
4. The semiconductor device of claim 1, wherein the thickness of the thickened region of single crystal silicon material is at least 180 nm.
5. A method for manufacturing a semiconductor device, comprising the steps of:
providing a silicon-on-insulator wafer comprising top layer silicon;
forming a plurality of silicon photo-devices in the top layer of silicon, the plurality of silicon photo-devices comprising lasers;
and thickening the top layer silicon of the region where the laser is positioned by adopting a monocrystalline silicon material to thicken the laser, so that the thickness requirement of the top layer silicon on the mode matching effect is met.
6. The method of claim 5, further comprising forming a dielectric layer overlying the top surfaces of the plurality of silicon optical devices prior to thickening the top silicon in the region of the laser.
7. The method according to claim 6, further comprising a step of removing the dielectric layer corresponding to the region to be thickened before thickening the top silicon layer in the region where the laser is located.
8. The method according to claim 6, wherein the dielectric layer comprises a silicon dioxide layer covering the surfaces of the silicon optical devices, and the silicon dioxide layer corresponding to a region to be thickened is removed before the top silicon layer of the region where the laser is located is thickened.
9. The preparation method of claim 5, wherein after the top silicon of the area where the laser is located is thickened, the surface of the thickened area is subjected to secondary etching forming.
10. The method of claim 5, wherein the plurality of silicon optical devices further comprises one or more of a modulator, a waveguide.
11. The method of claim 5, wherein the laser comprises a laser waveguide and a laser grating.
12. The method of claim 11, wherein the thickening is achieved by forming a single crystal silicon material on top of the silicon in the region of the laser by at least one of vapor phase epitaxy, liquid phase epitaxy, molecular beam epitaxy, chemical vapor deposition, physical vapor deposition, and atomic layer deposition.
13. The method according to claim 9, wherein after the secondary etching process is performed on the surface of the thickened region, the method further comprises the following steps:
and forming a protective layer covering the silicon optical device.
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| US20060220127A1 (en) * | 2003-04-22 | 2006-10-05 | Forschungszentrum Julich Gmbh | Method for producing a tensioned layer on a substrate, and a layer structure |
| US20160233641A1 (en) * | 2015-02-09 | 2016-08-11 | Stmicroelectronics Sa | Integrated hybrid laser source compatible with a silicon technology platform, and fabrication process |
| US20200026105A1 (en) * | 2018-07-23 | 2020-01-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Photonic transmitter |
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2020
- 2020-07-29 CN CN202010742829.4A patent/CN111785679A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060220127A1 (en) * | 2003-04-22 | 2006-10-05 | Forschungszentrum Julich Gmbh | Method for producing a tensioned layer on a substrate, and a layer structure |
| US20160233641A1 (en) * | 2015-02-09 | 2016-08-11 | Stmicroelectronics Sa | Integrated hybrid laser source compatible with a silicon technology platform, and fabrication process |
| US20200026105A1 (en) * | 2018-07-23 | 2020-01-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Photonic transmitter |
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