CN111781982A - Curvature compensation method and circuit of band-gap reference circuit - Google Patents
Curvature compensation method and circuit of band-gap reference circuit Download PDFInfo
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- CN111781982A CN111781982A CN202010293406.9A CN202010293406A CN111781982A CN 111781982 A CN111781982 A CN 111781982A CN 202010293406 A CN202010293406 A CN 202010293406A CN 111781982 A CN111781982 A CN 111781982A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The invention discloses a curvature compensation method and a curvature compensation circuit of a band-gap reference circuit. The curvature compensation method aims at the existing basic Dokbin band gap reference circuit, tail current bias of operational amplifier is provided through a bias circuit, and meanwhile, the Dokbin band gap reference circuit is compensated by utilizing the temperature characteristic of the bias circuit and a non-linear term contained in base current and temperature. The curvature compensation method introduces little noise and simplifies the design of the starting circuit. The circuit mainly comprises a CTAT (complementary-to-absolute-temperature) bias unit, a band-gap reference unit and a low-pass filter unit. The CTAT biasing unit provides a bias current for the band-gap reference core and a transconductance amplifier part thereof, and meanwhile curvature compensation is generated by utilizing the negative temperature characteristic of the biasing circuit and the exponential temperature characteristic of the base current of the reference core. The reference voltage is output through a low pass filter to further reduce its output noise.
Description
Technical Field
The invention relates to the field of band gap reference voltage, in particular to a low-temperature drift and low-noise band gap reference circuit.
Background
The voltage reference circuit is an important module in most integrated circuits and establishes a reference voltage point for the remaining circuit modules to achieve reliable and predictable performance in a complete system. It can be used with a voltage regulator to build a power supply, set a bias voltage in an operational amplifier, and establish a standard voltage for comparison in a data converter. The accuracy of the reference voltage generally determines the performance of the system as a whole.
The common band-gap reference circuit only performs first-order compensation on temperature, a characteristic curve of reference voltage changing along with the temperature is parabolic, a certain curvature exists, and the curvature needs to be compensated to obtain the band-gap reference circuit with lower temperature drift.
Low-frequency noise output by the reference circuit is mainly generated by flicker noise, and is generally difficult to be suppressed by a low-pass filter, so that a special band-gap reference architecture is required.
US8508211B1 discloses a low noise bandgap reference circuit, which provides a method for increasing emitter area and reducing reference output noise through multi-stage cascade, but this architecture does not provide a curvature compensation circuit thereof, and curvature compensation current also has influence on noise.
Disclosure of Invention
The invention discloses a curvature compensation method and circuit for a Dokbin band gap reference circuit.
A curvature compensation method of a band-gap reference circuit is used for carrying out curvature compensation on a Dokbin band-gap reference circuit by utilizing the negative temperature characteristic of a CTAT biasing circuit and a non-linear term contained in a base current of a band-gap reference core and the temperature.
A bandgap reference circuit having curvature compensation, comprising: the device comprises a band gap reference voltage unit, a low-pass filtering unit and a CTAT biasing unit;
a band gap reference voltage unit for generating a constant voltage;
the low-pass filtering unit is used for filtering the thermal noise of the band-gap reference voltage circuit;
and the CTAT biasing unit is used for generating negative temperature coefficient and low-noise current, providing bias for the band-gap reference voltage unit, completing the starting of the whole circuit, generating a positive top which is nonlinear with temperature together with the base current of the band-gap reference circuit, and realizing curvature compensation.
The band-gap reference voltage unit comprises a transconductance amplifier and is used for controlling the current ratio of the two branches of the reference core. The band-gap reference core is used for generating a first-order compensation reference voltage and carrying out curvature compensation by matching with the temperature characteristic of tail current and the nonlinear characteristic of base current.
The low-pass filter comprises a filter resistor and a filter capacitor and is used for improving the high-frequency power supply rejection ratio and reducing the output noise. The filter resistor and the filter capacitor can be formed by an internally integrated MOS (metal oxide semiconductor) tube or by an internally integrated resistor and a large capacitor outside a splicing piece.
The CTAT biasing unit comprises: and the self-biased cascode current mirror is used for controlling the currents of the two branches to be equal, improving the power supply rejection ratio and finishing self-starting. And a current generating part for generating a negative temperature coefficient, low noise current. After the CTAT bias is started, the biased bandgap reference core and the transconductance amplifier are also started, and an additional starting circuit is not needed. The CTAT current generation part has a negative feedback loop, noise contribution of the current generation part to a self-bias current mirror grid end is restrained, output current noise is lower than constant transconductance bias, and the contribution of the output current noise serving as curvature compensation current to overall output noise is lower.
Compared with the prior art, the band-gap reference circuit has the advantages that the CTAT biasing circuit is adopted to provide tail current for the band-gap reference circuit core circuit and the amplifier, the negative temperature coefficient of the CTAT biasing circuit is matched with the base current in the band-gap reference core to provide nonlinearity, and curvature compensation is carried out on the whole output voltage. The design of the curvature compensation circuit and the starting circuit is simplified. Simulation results show that the temperature coefficient can reach 3.7 ppm/DEG C at-40-125 ℃, and the low-frequency noise at 0.1-10Hz can reach 1 mu Vp-p.
Drawings
FIG. 1 is a schematic diagram of a bandgap reference circuit with curvature compensation;
fig. 2 is a graph of output voltage versus temperature.
Detailed Description
The curvature compensation method and circuit of the bandgap reference circuit are described in detail below.
As shown in FIG. 1, the bandgap reference unit is a tail current source provided by a CTAT bias unit, the voltage of X and Y points is controlled to be equal by an amplifier, the proportion of branch currents is controlled by R1 and R2, a first-order compensation bandgap reference circuit is generated by flowing positive temperature coefficient current on R3 through R3 and R4 and two diodes Q3 and Q4, and meanwhile, the curvature compensation output voltage value is obtained by subtracting the shunting of Q1 base current on R4.
VR3＝VBE2+VBE6-(VBE1+VBE5) (1.1)
VBG＝VR3+VR4+2VBE(1.3)
Wherein 2VBEV represents Q3 or Q4BEThe sum of the voltages is obtained from the formula (1.1-1.3):
wherein, including linear and non-linear terms, α indicates that the collector current is α power of temperature, VG(T) represents the bandgap voltage of Si.
The first term of equation (1.4) is known from equation (1.5) to have a negative temperature coefficient, including a non-linear term, the second term has a positive temperature coefficient, the first and second terms can be first order compensated to cancel the negative linear term in the temperature coefficient of VBE, and the negative non-linear term in the temperature coefficient of VBE can be cancelled by Ib1 to generate a negative temperature coefficient non-linearity.
The CTAT biasing circuit unit comprises a self-biasing cascode current mirror, a resistor Rbias providing self-biasing, and current generation cores MN1, MN0 and a resistor R0, wherein MN0 works in a subthreshold region, and VGS of the current generation cores is close to threshold voltage; the noise contribution of MN0 to the cascode current mirror gate is negligible subject to the suppression by the feedback loop. The tail current of the bandgap reference core replicates the CTAT bias circuit through a current mirror. The copy ratio is 1: n, and the current ratio of the two branches R1 and R2 is R2: R1, and the sum of the currents of the two branches R1 and R2 is IT.
Wherein Δ EGIs the emitter bandgap shrinkage factor, which is proportional to the doping level of the emitter.
Vth＝Vth(Tr)-a(T-Tr) (1.8)
Where a is a normal number. Then there are:
wherein, K1As a linear term, K2Can be used as a curvature compensation term. When determining R1And R2When value of (A) is K1、K2Are all reacted with R4In connection with, scanning R by simulation4The reference voltage with the lowest temperature coefficient is obtained.
Fig. 2 is a graph of the relationship between the output voltage and the temperature, and a curve of the reference voltage with the temperature, which is similar to a sine wave after curvature compensation, is obtained, and the temperature coefficient can be obtained.
A TSMC 0.18 mu m BCD process is adopted for simulation, the temperature coefficient can reach 3.7 ppm/DEG C at-40-125 ℃, and the low-frequency noise at 0.1-10Hz can reach 1 mu Vp-p.
The above embodiments of the present invention are merely examples for illustrating the present invention, and are not intended to limit the embodiments of the present invention. Variations and modifications in other variations will occur to those skilled in the art upon reading the foregoing description. All obvious changes and modifications of the present invention are within the scope of the present invention.
Claims (5)
1. A curvature compensation method of a bandgap reference circuit is characterized in that curvature compensation is carried out on the Dokbin bandgap reference circuit by utilizing the negative temperature characteristic of a CTAT bias circuit and a nonlinear term contained in a bandgap reference core base current and the temperature.
2. A bandgap reference circuit having curvature compensation, comprising: the device comprises a band gap reference voltage unit, a low-pass filtering unit and a CTAT biasing unit;
a band gap reference voltage unit for generating a constant voltage;
the low-pass filtering unit is used for filtering the thermal noise of the band-gap reference voltage circuit;
and the CTAT biasing unit is used for generating negative temperature coefficient and low-noise current, providing bias for the band-gap reference voltage unit, completing the starting of the whole circuit, generating a positive term which is nonlinear with temperature together with the base current of the band-gap reference circuit and realizing curvature compensation.
3. The circuit of claim 2, wherein the bandgap reference voltage unit comprises:
the transconductance amplifier is used for controlling the current ratio of the two branches of the reference core;
the band-gap reference core is used for generating a first-order compensation reference voltage and carrying out curvature compensation by matching with the temperature characteristic of tail current and the nonlinear characteristic of base current.
4. The circuit of claim 2, wherein the low pass filter comprises a filter resistor and a filter capacitor for increasing a high frequency power supply rejection ratio and reducing output noise.
5. The circuit of claim 2, wherein the CTAT biasing unit comprises:
the self-biased cascode current mirror is used for controlling the currents of the two branches to be equal, improving the power supply rejection ratio and finishing self-starting;
and a current generating part for generating a negative temperature coefficient, low noise current.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114326908A (en) * | 2021-12-14 | 2022-04-12 | 山东领能电子科技有限公司 | LDO circuit with built-in automatic temperature compensation function, working method and power supply |
| CN115237195A (en) * | 2022-08-31 | 2022-10-25 | 中国电子科技集团公司第二十四研究所 | Voltage reference source |
| CN117008676A (en) * | 2023-08-17 | 2023-11-07 | 荣湃半导体（上海）有限公司 | Self-starting circuit for band-gap reference circuit |
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| US20100073070A1 (en) * | 2008-09-25 | 2010-03-25 | Hong Kong Applied Science & Technology Research Intitute Company Limited | Low Voltage High-Output-Driving CMOS Voltage Reference With Temperature Compensation |
| CN205405321U (en) * | 2016-03-02 | 2016-07-27 | 湘潭大学 | Camber compensation low temperature floats band gap reference voltage source |
| CN105974991A (en) * | 2016-07-05 | 2016-09-28 | 湖北大学 | Low-temperature-coefficient band-gap reference voltage source with high-order temperature compensation |
| CN106647916A (en) * | 2017-02-28 | 2017-05-10 | 中国电子科技集团公司第五十八研究所 | High-order temperature compensation band-gap reference voltage source |
| CN111045471A (en) * | 2019-11-11 | 2020-04-21 | 浙江大学 | Curvature compensation method and circuit of band-gap voltage reference circuit |
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2020
- 2020-04-15 CN CN202010293406.9A patent/CN111781982A/en active Pending
Patent Citations (5)
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| US20100073070A1 (en) * | 2008-09-25 | 2010-03-25 | Hong Kong Applied Science & Technology Research Intitute Company Limited | Low Voltage High-Output-Driving CMOS Voltage Reference With Temperature Compensation |
| CN205405321U (en) * | 2016-03-02 | 2016-07-27 | 湘潭大学 | Camber compensation low temperature floats band gap reference voltage source |
| CN105974991A (en) * | 2016-07-05 | 2016-09-28 | 湖北大学 | Low-temperature-coefficient band-gap reference voltage source with high-order temperature compensation |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114326908A (en) * | 2021-12-14 | 2022-04-12 | 山东领能电子科技有限公司 | LDO circuit with built-in automatic temperature compensation function, working method and power supply |
| CN114326908B (en) * | 2021-12-14 | 2023-09-15 | 山东领能电子科技有限公司 | LDO circuit with built-in automatic temperature compensation function, working method and power supply |
| CN115237195A (en) * | 2022-08-31 | 2022-10-25 | 中国电子科技集团公司第二十四研究所 | Voltage reference source |
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| CN117008676A (en) * | 2023-08-17 | 2023-11-07 | 荣湃半导体（上海）有限公司 | Self-starting circuit for band-gap reference circuit |
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