CN111760847A - Cleaning process of semiconductor product - Google Patents
Cleaning process of semiconductor product Download PDFInfo
- Publication number
- CN111760847A CN111760847A CN202010567136.6A CN202010567136A CN111760847A CN 111760847 A CN111760847 A CN 111760847A CN 202010567136 A CN202010567136 A CN 202010567136A CN 111760847 A CN111760847 A CN 111760847A
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- CN
- China
- Prior art keywords
- cleaning
- ultrasonic
- semiconductor product
- particles
- soft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/14—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects using gases or vapours other than air or steam, e.g. inert gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
Abstract
The invention provides a cleaning process of a semiconductor product, which sequentially comprises the following steps: ultrasonic cleaning, namely adding an environment-friendly cleaning agent and a plurality of soft cleaning particles into a first ultrasonic cleaning machine, and putting the semiconductor product into the first ultrasonic cleaning agent for cleaning; ultrasonic rinsing, namely injecting absolute ethyl alcohol into a second ultrasonic cleaning machine, and putting the semiconductor product into the second ultrasonic cleaning machine for rinsing; and (4) drying, namely putting the semiconductor product into a dryer for drying. According to the invention, through the ultrasonic cleaning machine and the cleaning materials with special combination, the cleaning processes can be effectively shortened to three, and the space occupied by the cleaning processing line can be effectively reduced, so that the land cost is reduced, and the cleaning processing efficiency can be remarkably improved; when cleaning work is carried out, the ultrasonic cleaning machine enables the environment-friendly cleaning agent to fully contact the semiconductor product, and the ultrasonic cleaning machine also enables the soft cleaning particles to fully act with the semiconductor product, so that the cleaning effect is further improved.
Description
Technical Field
The invention relates to semiconductor cleaning, and particularly discloses a cleaning process of a semiconductor product.
Background
The semiconductor is a material with conductivity between a conductor and an insulator at normal temperature, and a semiconductor product is an electronic device made of the semiconductor material.
In the manufacturing process of semiconductor products, processes such as etching, dicing, cutting and the like are required, and after the processes such as the above processes, contaminants such as processing liquid and debris remain on the surfaces of the semiconductor products, and if the contaminants are not cleaned, the performance of the semiconductor products is reduced. In the prior art, the cleaning of the pollutants on the surface of the semiconductor product is completed by 7 procedures of manual cleaning I, steam bath II, manual cleaning II, manual rinsing I, manual rinsing II and baking, the cleaning processing line is long, the occupied space is large, the land cost is high, and the cleaning efficiency is low.
Disclosure of Invention
Therefore, in order to solve the problems in the prior art, it is necessary to provide a cleaning process for semiconductor products, which can significantly shorten the processing line, reduce the land cost, and achieve good overall cleaning effect and high cleaning efficiency.
In order to solve the problems of the prior art, the invention discloses a cleaning process of a semiconductor product, which sequentially comprises the following steps:
s1, ultrasonic cleaning, namely adding an environment-friendly cleaning agent and a plurality of soft cleaning particles into a first ultrasonic cleaning machine, and putting the semiconductor product into the first ultrasonic cleaning agent for cleaning for 16-22 min, wherein the ultrasonic frequency of the first ultrasonic cleaning machine is 70-100 Hz, and the cleaning temperature is 40-50 ℃;
s2, ultrasonic rinsing, namely, injecting absolute ethyl alcohol into a second ultrasonic cleaning machine, and putting the semiconductor product obtained in the step S1 into the second ultrasonic cleaning machine for rinsing for 8-15 min, wherein the ultrasonic frequency of the first ultrasonic cleaning machine is 70-90 Hz, and the rinsing temperature is 35-45 ℃;
s3, drying, namely, putting the semiconductor product obtained in the step S2 into a dryer to be dried for 20-30 min, wherein the drying temperature is 60-80 ℃.
Further, in step S1, the environment-friendly cleaning agent includes the following components by volume: 2 parts of isopropanol, 1 part of nonylphenol polyvinyl ether, 1 part of trichloroethylene, 3 parts of tetraoxyethylene, 1 part of dichloromethane, 1 part of n-bromopropane and 5 parts of deionized water.
Further, in step S1, the soft cleaning particles account for 20 to 30 volume percent of the environment-friendly cleaning agent.
Further, in step S1, the diameter of the soft cleaning particles is 100 to 150 μm.
Further, in step S1, the soft cleaning particles are polyvinyl alcohol particles.
Further, in step S1, the soft cleaning particles are provided with a plurality of adsorption holes.
Further, in step S3, clean hot air for drying is formed in the dryer.
Further, in step S3, the clean hot air is an air flow formed by nitrogen and having a pressure value of 1.1-1.3 MPa.
Further, in step S1, the ultrasonic frequency of the first ultrasonic cleaning machine is 80Hz, and the cleaning time is 20 min; in step S2, the ultrasonic frequency of the second ultrasonic cleaning machine is 80Hz, and the rinsing time is 10 min; in step S3, the drying time is 30 min.
The invention has the beneficial effects that: the invention discloses a cleaning process of a semiconductor product, which can effectively shorten the cleaning procedures to three by an ultrasonic cleaning machine and a special combined cleaning material, and can effectively reduce the space occupied by a cleaning processing line, thereby reducing the land cost and obviously improving the cleaning processing efficiency; when cleaning operation goes on, ultrasonic cleaner makes the environmental protection cleaner fully contact semiconductor product, effectively ensures the cleaning performance, and ultrasonic cleaner still makes soft clean granule and semiconductor product fully act on to make the stubborn pollutant on semiconductor product surface drop, further improve clean effect.
Detailed Description
The present invention will be described in further detail with reference to specific embodiments in order to further understand the features and technical means of the invention and achieve specific objects and functions.
The embodiment of the invention discloses a cleaning process of a semiconductor product, which sequentially comprises the following steps:
s1, ultrasonic cleaning, namely adding an environment-friendly cleaning agent and a plurality of soft cleaning particles into a first ultrasonic cleaning machine, wherein the soft cleaning particles can effectively improve the cleaning effect and can also avoid collision damage to the semiconductor product in the cleaning process, and putting the semiconductor product into the first ultrasonic cleaning agent for cleaning for 16-22 min, wherein the ultrasonic frequency of the first ultrasonic cleaning machine is 70-100 Hz, and the cleaning temperature is 40-50 ℃;
s2, ultrasonic rinsing, namely, injecting absolute ethyl alcohol into a second ultrasonic cleaning machine, putting the semiconductor product obtained in the step S1 into the second ultrasonic cleaning machine, rinsing for 8-15 min, wherein the ultrasonic frequency of the first ultrasonic cleaning machine is 70-90 Hz, the rinsing temperature is 35-45 ℃, the absolute ethyl alcohol can be mixed and dissolved in most organic solvents such as ether, chloroform, glycerol and the like, most environment-friendly cleaning agents on the surface of the semiconductor product can be effectively taken away, and in the subsequent drying process, the absolute ethyl alcohol with a lower boiling point has high drying efficiency and can effectively shorten the drying time;
s3, drying, namely, putting the semiconductor product obtained in the step S2 into a dryer to be dried for 20-30 min, wherein the drying temperature is 60-80 ℃.
In the conventional technology, the cleaning of semiconductor products mainly comprises 7 processes, which are sequentially as follows: the cleaning method comprises the steps of manual cleaning I, steam bath II, manual cleaning II, manual rinsing I, manual rinsing II and baking, the cleaning processing line is long, the total occupied space of the cleaning processing line is large, the land cost is high, the cleaning efficiency is low, and the cleaning effect is not good. According to the invention, through the ultrasonic cleaning machine and the cleaning materials with special combination, the cleaning processes can be effectively shortened to three, and the space occupied by the cleaning processing line can be effectively reduced, so that the land cost is reduced, and in addition, a large number of station transfer operations can be omitted, and the cleaning processing efficiency can be obviously improved; when cleaning operation goes on, ultrasonic cleaner makes the environmental protection cleaner fully contact the semiconductor product, effectively ensures the cleaning performance, and ultrasonic cleaner still makes soft clean granule collide the semiconductor product to make the stubborn pollutant on semiconductor product surface drop, soft clean granule can also effectively adsorb partial pollutant, thereby further improves clean effect.
In this embodiment, in step S1, the environmental friendly detergent comprises the following components in parts by volume: 2 parts of isopropanol, 1 part of nonylphenol polyvinyl ether, 1 part of trichloroethylene, 3 parts of ethylene tetroxide, 1 part of dichloromethane, 1 part of n-bromopropane and 5 parts of deionized water, can effectively remove pollutants such as soldering flux, silicon chip fragments and the like on the surface of a semiconductor product, and can also be used as an environment-friendly cleaning agent for other semiconductor products.
In this embodiment, in step S1, the soft cleaning particles account for 20 to 30% by volume of the environment-friendly cleaning agent, and sufficient soft cleaning particles are disposed in the environment-friendly cleaning agent, so that the soft cleaning particles can effectively collide with the semiconductor product, thereby effectively improving the cleaning effect.
Based on the above embodiment, in step S1, the diameter of the soft cleaning particles is 100 to 150 μm, and the nano-scale size enables the contaminants on the surface of the semiconductor product to be fully acted by the soft cleaning particles, so that the contaminants on the surface of the semiconductor product are effectively released, and the cleaning effect is improved.
Based on the above embodiment, in step S1, the soft cleaning particles are polyvinyl alcohol particles, and the polyvinyl alcohol is a white solid with certain viscoelasticity, and can effectively adsorb the contaminants on the surface of the semiconductor product.
Based on the above embodiment, in step S1, the soft cleaning particles are provided with a plurality of adsorption holes, which can effectively improve the elasticity of the soft cleaning particles and can also effectively improve the pollutant adsorption capacity of the soft cleaning particles, and preferably, at least 60 adsorption holes are provided on each polyvinyl alcohol particle.
In the present embodiment, in step S3, cleaning hot wind for drying is formed in the dryer.
Based on the above embodiment, in step S3, the cleaning hot air is an air flow with a pressure value of 1.1 to 1.3Mpa formed by nitrogen, which can effectively flush away water droplets and residual contaminants on the surface of the semiconductor product, and the nitrogen can effectively reduce the activity of the semiconductor product, thereby preventing the semiconductor product from generating unnecessary reactions.
In this embodiment, in step S1, the ultrasonic frequency of the first ultrasonic cleaning machine is 80Hz, and the cleaning time is 20 min; in step S2, the ultrasonic frequency of the second ultrasonic cleaning machine is 80Hz, and the rinsing time is 10 min; in step S3, the drying time is 30 min.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (9)
1. A cleaning process for semiconductor products is characterized by sequentially comprising the following steps:
s1, ultrasonic cleaning, namely adding an environment-friendly cleaning agent and a plurality of soft cleaning particles into a first ultrasonic cleaning machine, and putting the semiconductor product into the first ultrasonic cleaning agent for cleaning for 16-22 min, wherein the ultrasonic frequency of the first ultrasonic cleaning machine is 70-100 Hz, and the cleaning temperature is 40-50 ℃;
s2, ultrasonic rinsing, namely, injecting absolute ethyl alcohol into a second ultrasonic cleaning machine, and putting the semiconductor product obtained in the step S1 into the second ultrasonic cleaning machine for rinsing for 8-15 min, wherein the ultrasonic frequency of the first ultrasonic cleaning machine is 70-90 Hz, and the rinsing temperature is 35-45 ℃;
s3, drying, namely, putting the semiconductor product obtained in the step S2 into a dryer to be dried for 20-30 min, wherein the drying temperature is 60-80 ℃.
2. The process of claim 1, wherein in step S1, the environmental friendly cleaning agent comprises the following components in parts by volume: 2 parts of isopropanol, 1 part of nonylphenol polyvinyl ether, 1 part of trichloroethylene, 3 parts of tetraoxyethylene, 1 part of dichloromethane, 1 part of n-bromopropane and 5 parts of deionized water.
3. The cleaning process for semiconductor products as claimed in claim 1, wherein in step S1, the soft cleaning particles account for 20-30% by volume of the environment-friendly cleaning agent.
4. The cleaning process for semiconductor products as claimed in claim 3, wherein in step S1, the diameter of the soft cleaning particles is 100-150 μm.
5. The process of claim 4, wherein in step S1, the soft cleaning particles are polyvinyl alcohol particles.
6. The process of claim 5, wherein in step S1, the soft cleaning particles have a plurality of adsorption holes.
7. The cleaning process for semiconductor products according to claim 1, wherein in step S3, a hot cleaning wind is formed in the dryer for drying.
8. The cleaning process for semiconductor products as claimed in claim 7, wherein the cleaning hot air is a stream of nitrogen gas with a pressure of 1.1-1.3 MPa in step S3.
9. The cleaning process of a semiconductor product according to claim 1, wherein in step S1, the ultrasonic frequency of the first ultrasonic cleaning machine is 80Hz, and the cleaning time is 20 min; in step S2, the ultrasonic frequency of the second ultrasonic cleaning machine is 80Hz, and the rinsing time is 10 min; in step S3, the drying time is 30 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010567136.6A CN111760847A (en) | 2020-06-19 | 2020-06-19 | Cleaning process of semiconductor product |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010567136.6A CN111760847A (en) | 2020-06-19 | 2020-06-19 | Cleaning process of semiconductor product |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111760847A true CN111760847A (en) | 2020-10-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010567136.6A Pending CN111760847A (en) | 2020-06-19 | 2020-06-19 | Cleaning process of semiconductor product |
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Citations (7)
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| JP2001358111A (en) * | 2000-06-12 | 2001-12-26 | Toshiba Corp | Wafer-cleaning method and manufacturing method for semiconductor device |
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| CN103611700A (en) * | 2013-11-19 | 2014-03-05 | 奥特斯维能源（太仓）有限公司 | Cleaning process for corrosive sizing agents for hole forming in films |
| CN103639149A (en) * | 2013-12-09 | 2014-03-19 | 山东百利通亚陶科技有限公司 | Method for cleaning wafer |
| CN107552481A (en) * | 2016-06-30 | 2018-01-09 | 崔敏娟 | A kind of silicon wafer cleaning process |
| CN107686779A (en) * | 2016-08-03 | 2018-02-13 | 天津鑫泰士特电子有限公司 | Semiconductor cleaning agent for silicon microsection and preparation method thereof |
-
2020
- 2020-06-19 CN CN202010567136.6A patent/CN111760847A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001358111A (en) * | 2000-06-12 | 2001-12-26 | Toshiba Corp | Wafer-cleaning method and manufacturing method for semiconductor device |
| CN102803564A (en) * | 2009-06-24 | 2012-11-28 | 朗姆研究公司 | Damage-free High Efficiency Particle Removal Clean |
| CN102703242A (en) * | 2012-05-14 | 2012-10-03 | 晶澳太阳能有限公司 | Water base cleaning solution for cleaning solar battery electronic paste and preparation method thereof |
| CN103611700A (en) * | 2013-11-19 | 2014-03-05 | 奥特斯维能源（太仓）有限公司 | Cleaning process for corrosive sizing agents for hole forming in films |
| CN103639149A (en) * | 2013-12-09 | 2014-03-19 | 山东百利通亚陶科技有限公司 | Method for cleaning wafer |
| CN107552481A (en) * | 2016-06-30 | 2018-01-09 | 崔敏娟 | A kind of silicon wafer cleaning process |
| CN107686779A (en) * | 2016-08-03 | 2018-02-13 | 天津鑫泰士特电子有限公司 | Semiconductor cleaning agent for silicon microsection and preparation method thereof |
Non-Patent Citations (1)
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Application publication date: 20201013 |