CN111739959B - 一种高效碲化镉薄膜太阳能电池及其制备方法 - Google Patents

一种高效碲化镉薄膜太阳能电池及其制备方法 Download PDF

Info

Publication number
CN111739959B
CN111739959B CN202010507161.5A CN202010507161A CN111739959B CN 111739959 B CN111739959 B CN 111739959B CN 202010507161 A CN202010507161 A CN 202010507161A CN 111739959 B CN111739959 B CN 111739959B
Authority
CN
China
Prior art keywords
layer
light absorption
cadmium
cadmium telluride
back electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010507161.5A
Other languages
English (en)
Other versions
CN111739959A (zh
Inventor
彭寿
陈瑛
殷新建
周显华
魏梦楠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
China Triumph International Engineering Co Ltd
Original Assignee
China Triumph International Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by China Triumph International Engineering Co Ltd filed Critical China Triumph International Engineering Co Ltd
Priority to CN202010507161.5A priority Critical patent/CN111739959B/zh
Priority to PCT/CN2020/118393 priority patent/WO2021243896A1/zh
Priority to EP20939025.1A priority patent/EP4163983A1/en
Publication of CN111739959A publication Critical patent/CN111739959A/zh
Application granted granted Critical
Publication of CN111739959B publication Critical patent/CN111739959B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明公开了一种高效碲化镉薄膜太阳能电池及其制备方法，由下至上包括依次设置的衬底层、窗口层、光吸收层和背电极层；其中，所述窗口层的材料为掺镁氧化锌，所述光吸收层为掺砷碲硒镉薄膜层，所述背电极层由钼、铝和铬的复合金属材料构成。本发明通过电注入再生的方式，以适量As替代Cu来掺杂碲硒镉薄膜层，实现高的p型掺杂密度，得到Voc＞1V，转换效率＞23％，转换效率高，整个制备过程操作简单且容易控制。

Description

一种高效碲化镉薄膜太阳能电池及其制备方法
技术领域
本发明涉及薄膜太阳能电池技术领域，尤其涉及一种高效碲化镉薄膜太阳能电池及其制备方法。
背景技术
碲化镉太阳能电池，较单晶硅太阳能电池有制作方便、成本低廉和重量较轻等优点。碲化镉薄膜太阳能电池简称CdTe电池，它是一种以p型CdTe和n型CdSe的异质结为基础的薄膜太阳能电池。一般标准的碲化镉薄膜太阳能电池由五层结构组成：背电极、背接触层、CdTe吸收层、CdTe窗口层、TCO层。碲化镉薄膜太阳能电池的生产成本远远低于晶体硅和其他材料的太阳能电池技术，其次它和太阳光谱很一致，可吸收95％以上的阳光。在广泛深入的应用研究基础上，国际上许多国家的CdTe电池已由实验室研究阶段开始走向规模工业化生产。
但是，当前针对碲化镉薄膜电池效率的提升已经达到一定的瓶颈，由于Voc很难进一步提升，同时由于现有高效的电池都会掺杂铜，而铜的引入同时也会损失电池的稳定性。
发明内容
本发明的目的是针对现有技术中的不足，提供一种高效碲化镉薄膜太阳能电池及其制备方法，通过适量As替代Cu来掺杂碲硒镉薄膜层，实现高的p型掺杂密度，得到Voc＞1V，转换效率＞23％，并且使得碲化镉电池拥有长期的高效稳定性。
为实现上述目的，本发明采取的技术方案是：
本发明第一方面一种高效碲化镉薄膜太阳能电池，所述太阳能电池由下至上包括依次设置的衬底层、窗口层、光吸收层和背电极层；
其中，所述窗口层的材料为掺镁氧化锌，所述光吸收层为掺砷碲硒镉薄膜层，所述背电极层由钼、铝和铬的复合金属材料构成。
优选地，所述衬底层的材料为氧化铟锡导电膜层、TiO2导电膜层和掺铝氧化锌导电膜层中的一种。
优选地，所述窗口层的厚度为40-70nm；所述光吸收层的厚度为2.0-4.0μm；所述背电极层的厚度为220-250nm。
优选地，所述掺镁氧化锌中镁的摩尔百分比为0-8mol％；所述掺砷碲硒镉中砷的摩尔百分比为3-20mol％。
本发明第二方面提供上述高效碲化镉薄膜太阳能电池的制备方法，包括如下步骤：
S1、在所述衬底层上沉积所述窗口层；
S2、在所述窗口层上沉积所述光吸收层，通过活化退火工序对所述光吸收层进行活化退火处理；
S3、在所述光吸收层上沉积所述背电极层，即得碲化镉薄膜太阳能电池；
S4、将经步骤S3制得的电池用质量浓度为0.05-5％的盐酸蚀刻清洗，然后在所述电池上采用磁控溅射法沉积碲化锌薄膜层，且碲化锌薄膜层的厚度为20-80nm；
S5、将经步骤S4处理后的电池先经过激光1刻划，进行组件的电池分割，分割为200-300个不等的单元，然后进行光刻胶涂覆显影，填充刻划的所述单元；再经过激光2刻划，同样刻划200-300个线，刻划后沉积所述背电极层，接着对所述组件进行活化退火处理，进行常规组件封装；
S6、将经步骤S5封装后的所述组件进行碲化镉的电注入激活，给所述电池的接线端加载一定的偏压和电流。
优选地，所述窗口层采用磁控溅射法或丝网印刷技术或射频溅射法沉积制得；所述光吸收层采用近空间升华法或气相输运沉积法或电化学沉积法沉积制得；所述背电极层采用磁控溅射法沉积制得。
优选地，S2中，所述光吸收层的具体沉积过程为：通过近空间升华法先沉积硒化镉薄膜的厚度为100-1700nm；然后沉积掺砷碲化镉薄膜的厚度为1300-3900nm。
优选地，所述掺砷碲化镉材料的具体制备过程为：把纯度大于5N的Cd3As2材料和纯度大于5N的CdTe材料混合后研磨；所述混合材料中砷的浓度为1x1015-1x1022cm-3。
优选地，S2中，所述活化退火温度为350-600℃，时间为5-40min；S5中，所述活化退火温度为150-280℃，时间为5-30min。
优选地，S6中，所述电注入温度为80-150℃，时间为3-15min；所述偏压的范围为Voc±15％，所述电流的范围为1-3倍Jsc。
本发明采用以上技术方案，与现有技术相比，具有如下技术效果：
1、本发明的碲化镉薄膜太阳能电池窗口层的材料为掺镁氧化锌，光吸收层的材料为掺砷碲硒镉，通过适量As替代Cu来掺杂碲硒镉薄膜层，实现高的p型掺杂密度，得到Voc＞1V，转换效率＞23％，转换效率高。
2、本发明的制备方法通过电注入再生的方式，提升了碲化镉电池的性能，而且采用本方法制备的碲化镉电池初始性能优异，并且使得碲化镉电池拥有长期的高效稳定性，整个制备过程操作简单且容易控制。
附图说明
图1为本发明中高效碲化镉薄膜太阳能电池的结构示意图；
其中的各附图标记为：
1-衬底层；2-窗口层；3-光吸收层；4-背电极层。
具体实施方式
下面结合附图和具体实施例对本发明作进一步说明，但不作为本发明的限定。
需要说明的是，在不冲突的情况下，本发明中的实施例及实施例中的特征可以相互组合。
如图1所示，本发明提供一种高效碲化镉薄膜太阳能电池，所述太阳能电池由下至上包括依次设置的衬底层1、窗口层2、光吸收层3和背电极层4；其中，所述窗口层2的材料为掺镁氧化锌，所述光吸收层3为掺砷碲硒镉薄膜层，所述背电极层4由钼、铝和铬的复合金属材料构成。
作为一个优选实施例，所述衬底层1的材料为氧化铟锡导电膜层、TiO2导电膜层和掺铝氧化锌导电膜层中的一种。
作为一个优选实施例，所述窗口层2的厚度为40-70nm；所述光吸收层3的厚度为2.0-4.0μm；所述背电极层4的厚度为220-250nm。
作为一个优选实施例，所述掺镁氧化锌中镁的摩尔百分比为0-8mol％；所述掺砷碲硒镉中砷的摩尔百分比为3-20mol％。
上述高效碲化镉薄膜太阳能电池的制备方法，包括如下步骤：
S1、在所述衬底层1上沉积所述窗口层2；
S2、在所述窗口层2上沉积所述光吸收层3，通过活化退火工序对所述光吸收层3进行活化退火处理；
S3、在所述光吸收层3上沉积所述背电极层4，即得碲化镉薄膜太阳能电池；
S4、将经步骤S3制得的电池用质量浓度为0.05-5％的盐酸蚀刻清洗，然后在所述电池上采用磁控溅射法沉积碲化锌薄膜层，且碲化锌薄膜层的厚度为20-80nm；
S5、将经步骤S4处理后的电池先经过激光1刻划，进行组件的电池分割，分割为200-300个不等的单元，然后进行光刻胶涂覆显影，填充刻划的所述单元；再经过激光2刻划，同样刻划200-300个线，刻划后沉积所述背电极层4，接着对所述组件进行活化退火处理，进行常规组件封装；
S6、将经步骤S5封装后的所述组件进行碲化镉的电注入激活，给所述电池的接线端加载一定的偏压和电流。
作为一个优选实施例，所述窗口层2采用磁控溅射法或丝网印刷技术或射频溅射法沉积制得；所述光吸收层3采用近空间升华法或气相输运沉积法或电化学沉积法沉积制得；所述背电极层4采用磁控溅射法沉积制得。
作为一个优选实施例，S2中，所述光吸收层3的具体沉积过程为：通过近空间升华法先沉积硒化镉薄膜的厚度为100-1700nm；然后沉积掺砷碲化镉薄膜的厚度为1300-3900nm。
作为一个优选实施例，所述掺砷碲化镉材料的具体制备过程为：把纯度大于5N的Cd3As2材料和纯度大于5N的CdTe材料混合后研磨，是在抽真空条件下的研磨；所述混合材料中砷的浓度为1x1015-1x1022cm-3。
作为一个优选实施例，S2中，所述活化退火温度为350-600℃，时间为5-40min；S5中，所述活化退火温度为150-280℃，时间为5-30min。
作为一个优选实施例，S6中，所述电注入温度为80-150℃，时间为3-15min；所述偏压的范围为Voc±15％，所述电流的范围为1-3倍Jsc。
应用例
将本发明电池与现有技术进行各方面性能的比较，结果如表1所示：
表1
掺杂情况 Jsc(mA/cm<sup>2</sup>) Voc(mV) FF(％) Eff(％)
无掺杂 25.8 759 33.1 6.48
掺铜 26.5 788 67.5 14.10
掺砷 26.8 1000 76.5 16.79
由表1中数据可知，本发明的碲化镉薄膜太阳能电池通过适量As替代Cu来掺杂碲硒镉薄膜层，实现高的p型掺杂密度，得到Voc＞1V，转换效率＞23％，转换效率高。
以上所述仅为本发明较佳的实施例，并非因此限制本发明的实施方式及保护范围，对于本领域技术人员而言，应当能够意识到凡运用本发明说明书内容所作出的等同替换和显而易见的变化所得到的方案，均应当包含在本发明的保护范围内。

Claims (1)

1.一种高效碲化镉薄膜太阳能电池的制备方法，其特征在于，所述太阳能电池由下至上包括依次设置的衬底层(1)、窗口层(2)、光吸收层(3)和背电极层(4)；其中，所述窗口层(2)的材料为掺镁氧化锌，所述光吸收层(3)为掺砷碲硒镉薄膜层，所述背电极层(4)由钼、铝和铬的复合金属材料构成，包括如下步骤：
S1、在所述衬底层(1)上沉积所述窗口层(2)；
S2、在所述窗口层(2)上沉积所述光吸收层(3)，通过活化退火工序对所述光吸收层(3)进行活化退火处理；
S3、在所述光吸收层(3)上沉积所述背电极层(4)，即得碲化镉薄膜太阳能电池；
S4、将经步骤S3制得的电池用质量浓度为0.05-5％的盐酸蚀刻清洗，然后在所述电池上采用磁控溅射法沉积碲化锌薄膜层，且碲化锌薄膜层的厚度为20-80nm；
S5、将经步骤S4处理后的电池先经过激光1刻划，进行组件的电池分割，分割为200-300个单元，然后进行光刻胶涂覆显影，填充刻划的所述单元；再经过激光2刻划，同样刻划200-300个线，刻划后沉积所述背电极层(4)，接着对所述组件进行活化退火处理，进行常规组件封装；
S6、将经步骤S5封装后的所述组件进行碲化镉的电注入激活，给所述电池的接线端加载一定的偏压和电流；
所述衬底层(1)的材料为氧化铟锡导电膜层、TiO2导电膜层和掺铝氧化锌导电膜层中的一种；
所述窗口层(2)的厚度为40-70nm；所述光吸收层(3)的厚度为2.0-4.0μm；所述背电极层(4)的厚度为220-250nm；
所述掺镁氧化锌中镁的摩尔百分比为0-8mol％；所述掺砷碲硒镉中砷的摩尔百分比为3-20mol％；
所述窗口层(2)采用磁控溅射法或丝网印刷技术或射频溅射法沉积制得；所述光吸收层(3)采用近空间升华法或气相输运沉积法或电化学沉积法沉积制得；所述背电极层(4)采用磁控溅射法沉积制得；
S2中，所述光吸收层(3)的具体沉积过程为：通过近空间升华法先沉积硒化镉薄膜的厚度为100-1700nm；然后沉积掺砷碲化镉薄膜的厚度为1300-3900nm；所述掺砷碲化镉材料的具体制备过程为：把纯度大于5N的Cd3As2材料和纯度大于5N的CdTe材料混合后研磨；所述混合材料中砷的浓度为1x1015-1x1022cm-3；
S2中，所述活化退火温度为350-600℃，时间为5-40min；S5中，所述活化退火温度为150-280℃，时间为5-30min；
S6中，所述电注入温度为80-150℃，时间为3-15min；所述偏压的范围为开路电压Voc±15％，所述电流的范围为1-3倍短路电流密度Jsc。
CN202010507161.5A 2020-06-05 2020-06-05 一种高效碲化镉薄膜太阳能电池及其制备方法 Active CN111739959B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN202010507161.5A CN111739959B (zh) 2020-06-05 2020-06-05 一种高效碲化镉薄膜太阳能电池及其制备方法
PCT/CN2020/118393 WO2021243896A1 (zh) 2020-06-05 2020-09-28 一种高效碲化镉薄膜太阳能电池及其制备方法
EP20939025.1A EP4163983A1 (en) 2020-06-05 2020-09-28 High-efficiency cadmium telluride thin-film solar cell and preparation method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010507161.5A CN111739959B (zh) 2020-06-05 2020-06-05 一种高效碲化镉薄膜太阳能电池及其制备方法

Publications (2)

Publication Number Publication Date
CN111739959A CN111739959A (zh) 2020-10-02
CN111739959B true CN111739959B (zh) 2021-06-25

Family

ID=72648388

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010507161.5A Active CN111739959B (zh) 2020-06-05 2020-06-05 一种高效碲化镉薄膜太阳能电池及其制备方法

Country Status (3)

Country Link
EP (1) EP4163983A1 (zh)
CN (1) CN111739959B (zh)
WO (1) WO2021243896A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113555458A (zh) * 2021-07-21 2021-10-26 成都中建材光电材料有限公司 薄膜太阳能电池及其制作方法
CN114014663B (zh) * 2021-11-29 2023-01-31 河南城建学院 一种碲硒砷镉化合物、靶材及其制备方法
CN113964244B (zh) * 2021-12-22 2022-03-11 成都中建材光电材料有限公司 太阳能薄膜电池及其制作方法
CN114583009B (zh) * 2022-02-18 2023-12-29 中国建材国际工程集团有限公司 碲化镉薄膜太阳能电池及其制备方法
CN115064608B (zh) * 2022-07-05 2024-04-09 中国建材国际工程集团有限公司 一种CdTe太阳电池组件及其制造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101093863A (zh) * 2007-06-12 2007-12-26 南开大学 ZnO为电绝缘与杂质阻挡层的薄膜太阳电池及其制备方法
CN101699748A (zh) * 2009-11-09 2010-04-28 刘文祥 纳米光伏
CN102881735A (zh) * 2011-06-01 2013-01-16 通用电气公司 光伏装置及制造方法
CN107742652A (zh) * 2017-08-31 2018-02-27 成都中建材光电材料有限公司 一种复合窗口层的碲化镉薄膜太阳能电池及其制备方法
CN109638096A (zh) * 2018-11-09 2019-04-16 南开大学 一种化合物半导体薄膜太阳能电池制备方法
CN110061085A (zh) * 2019-04-30 2019-07-26 中国科学技术大学 一种太阳能电池及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100243039A1 (en) * 2009-03-31 2010-09-30 General Electric Company Layer for thin film photovoltaics and a solar cell made therefrom
US10529883B2 (en) * 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing
US9899560B2 (en) * 2015-04-16 2018-02-20 China Triumph International Engineering Co., Ltd. Method of manufacturing thin-film solar cells with a p-type CdTe layer
EP3675182A3 (en) * 2016-05-31 2020-07-29 First Solar, Inc Ag-doped photovoltaic devices and method of making
JP2020511000A (ja) * 2017-02-24 2020-04-09 ファースト・ソーラー・インコーポレーテッド ドープ光起電力半導体層および製造方法
CN109920866A (zh) * 2017-12-12 2019-06-21 中国南玻集团股份有限公司 彩色光伏组件、其制备方法及应用
CN110707174A (zh) * 2019-10-14 2020-01-17 成都中建材光电材料有限公司 一种掺硒碲化镉薄膜电池

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101093863A (zh) * 2007-06-12 2007-12-26 南开大学 ZnO为电绝缘与杂质阻挡层的薄膜太阳电池及其制备方法
CN101699748A (zh) * 2009-11-09 2010-04-28 刘文祥 纳米光伏
CN102881735A (zh) * 2011-06-01 2013-01-16 通用电气公司 光伏装置及制造方法
CN107742652A (zh) * 2017-08-31 2018-02-27 成都中建材光电材料有限公司 一种复合窗口层的碲化镉薄膜太阳能电池及其制备方法
CN109638096A (zh) * 2018-11-09 2019-04-16 南开大学 一种化合物半导体薄膜太阳能电池制备方法
CN110061085A (zh) * 2019-04-30 2019-07-26 中国科学技术大学 一种太阳能电池及其制备方法

Also Published As

Publication number Publication date
WO2021243896A1 (zh) 2021-12-09
EP4163983A1 (en) 2023-04-12
CN111739959A (zh) 2020-10-02

Similar Documents

Publication Publication Date Title
CN111739959B (zh) 一种高效碲化镉薄膜太阳能电池及其制备方法
Chu et al. Recent progress in thin‐film cadmium telluride solar cells
Tiwari et al. CdTe solar cell in a novel configuration
US8084682B2 (en) Multiple band gapped cadmium telluride photovoltaic devices and process for making the same
US9093600B2 (en) Method of p-type doping of cadmium telluride
US8829342B2 (en) Back contact buffer layer for thin-film solar cells
US20110240123A1 (en) Photovoltaic Cells With Improved Electrical Contact
US20140290727A1 (en) Solar cell
US20130104985A1 (en) Photovoltaic device with mangenese and tellurium interlayer
US8110428B2 (en) Thin-film photovoltaic devices
US8044477B1 (en) Photovoltaic device and method for making
JP2013513953A (ja) 太陽光発電における使用のための高電力効率多結晶ＣｄＴｅ薄膜半導体光起電力電池構造
AU2010249144A1 (en) Method of making photovoltaic cell
US20170243999A1 (en) Solar cell
EP2224491A2 (en) Solar cell and method of fabricating the same
AU2017273524A1 (en) AG-doped photovoltaic devices and method of making
US20130146133A1 (en) Thin film photovoltaic solar cell device
US20120180858A1 (en) Method for making semiconducting film and photovoltaic device
WO2011123117A1 (en) Photovoltaic cells with improved electrical contact
US20220336687A1 (en) Doping and passivation for high efficiency solar cells
CN217182188U (zh) 一种钙钛矿/钙钛矿/硅-锗基三结叠层太阳能电池
US9935229B2 (en) Solar cell and method of fabricating the same
JP2003008039A (ja) 化合物太陽電池の製造方法
CN114583009A (zh) 碲化镉薄膜太阳能电池及其制备方法
KR101971398B1 (ko) 양면수광형 CdS/CdTe 박막태양전지 및 그 제조방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
EE01 Entry into force of recordation of patent licensing contract
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20201002

Assignee: CTF Solar Co.,Ltd.

Assignor: China Triumph International Engineering Co.,Ltd.

Contract record no.: X2022990000660

Denomination of invention: An efficient cadmium telluride thin film solar cell and its preparation method

Granted publication date: 20210625

License type: Common License

Record date: 20220926