CN111719186A - 一种微纳复合绒面结构的多晶黑硅制备方法 - Google Patents

一种微纳复合绒面结构的多晶黑硅制备方法 Download PDF

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CN111719186A
CN111719186A CN201910222768.6A CN201910222768A CN111719186A CN 111719186 A CN111719186 A CN 111719186A CN 201910222768 A CN201910222768 A CN 201910222768A CN 111719186 A CN111719186 A CN 111719186A
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silicon wafer
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black silicon
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何其金
张靖
何飞
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Jiangsu Derun Photoelectric Technology Co ltd
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Abstract

本发明公布了多晶黑硅技术领域的一种微纳复合绒面结构的多晶黑硅制备方法:硅片:氢氧化钾;硝酸:清水;硝酸银:氢氟酸:金属离子银:碱性溶液;将硅片先放入到由氢氧化钾与硝酸组成的混合腐蚀溶液,得到具有微米绒面结构的多晶硅片,从而增加了多晶硅片的表面积,而且还对多晶黑硅进行了初级简易的加工,去除掉了原始多晶硅片表面的在切割或者打磨时的损伤层,然后在放入到硝酸银与氢氟酸组成的溶液中,并添加金属离子银,即可得到具有微纳复合绒面结构的多晶硅片,最后将多晶硅片发入到氢氧化钠强碱性溶液,对多晶硅片的结构修正刻蚀,减少降低多晶硅片的反射率,从而得到纳米级类金字塔结构的微纳复合绒面结构多晶黑硅。

Description

一种微纳复合绒面结构的多晶黑硅制备方法
技术领域
本发明涉及多晶黑硅技术领域,具体为一种微纳复合绒面结构的多晶黑硅制备方法。
背景技术
多晶黑硅是组成太阳能电池的基本结构之一,而且多晶黑硅能大幅提高光电转换效率的新型电子材料,已经慢慢的在太阳能电池产品中占据主导地位;
但现有技术中基本上没有直接在没有绒面结构的硅片上进行刻蚀,获得的绒面仅为单一的纳米绒面,均没有制备得到微纳米复合的绒面结构多晶黑硅,多晶硅片绒面表面积和减反效果有待提升,而且反应过程速度快,导致反应过程不易控制,为此,我们提出一种微纳复合绒面结构的多晶黑硅制备方法。
发明内容
本发明的目的在于提供一种微纳复合绒面结构的多晶黑硅制备方法,以解决上述背景技术中提出的问题。
为实现上述目的,本发明提供如下技术方案:一种微纳复合绒面结构的多晶黑硅制备方法:该微纳复合绒面结构的多晶黑硅包括以下原料制备得到:
硅片:
氢氧化钾;
硝酸:
清水;
硝酸银:
氢氟酸:
金属离子银:
碱性溶液。
优选的,所述氢氧化钾与硝酸需倒入可密封的玻璃容器中,然后通过玻璃搅拌杆进行缓慢匀速的搅拌。
优选的,所述氢氟酸的浓度为5-8mol/L,所述硝酸银的浓度为 0.1-0.5mol/L。
优选的,所述碱性溶液设置为氢氧化钠强碱性溶液。
优选的,所述清水需为烧开后放置到常温的开水。
与现有技术相比,本发明的有益效果是:该微纳复合绒面结构的多晶黑硅制备方法,操作简单,将硅片先放入到由氢氧化钾与硝酸组成的混合腐蚀溶液,得到具有微米绒面结构的多晶硅片,从而增加了多晶硅片的表面积,而且还对多晶黑硅进行了初级简易的加工,去除掉了原始多晶硅片表面的在切割或者打磨时的损伤层,然后在放入到硝酸银与氢氟酸组成的溶液中,并添加金属离子银,即可得到具有微纳复合绒面结构的多晶硅片,最后将多晶硅片发入到氢氧化钠强碱性溶液,对多晶硅片的结构修正刻蚀,减少降低多晶硅片的反射率,从而得到纳米级类金字塔结构的微纳复合绒面结构多晶黑硅。
具体实施方式
下面将结合本发明实施例,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
一种微纳复合绒面结构的多晶黑硅制备方法:该微纳复合绒面结构的多晶黑硅包括以下原料制备得到:
硅片:
氢氧化钾;
硝酸:
清水;
硝酸银:
氢氟酸:
金属离子银:
碱性溶液。
其中:氢氧化钾与硝酸需倒入可密封的玻璃容器中,然后通过玻璃搅拌杆进行缓慢匀速的搅拌;
氢氟酸的浓度为5-8mol/L,所述硝酸银的浓度为0.1-0.5mol/L;
碱性溶液设置为氢氧化钠强碱性溶液;
清水需为烧开后放置到常温的开水。
一种微纳复合绒面结构的多晶黑硅包括如下步骤的方法制备得到:
S1:将硅片放入由氢氧化钾与硝酸组成的混合腐蚀溶液中50-250s后将其取出并通过清水进行清洗,然后得到具有微米绒面结构的多晶硅片;
S2:将S1步骤中得到的具有微米绒面结构的多晶硅片放入到硝酸银与氢氟酸组成的溶液中,并添加金属离子银,静置2-4min,获得具有微纳复合绒面结构的多晶硅片;
S3:将S2步骤中的多晶硅片在放入到碱性溶液,与多晶硅片进行化学反应,静置2-4min,取出并通过清水进行清洗,然后通过烘干装置即可获得纳米级类金字塔结构的微纳复合绒面结构多晶黑硅。
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同物限定。

Claims (6)

1.一种微纳复合绒面结构的多晶黑硅制备方法,其特征在于:该微纳复合绒面结构的多晶黑硅包括以下原料制备得到:
硅片:
氢氧化钾;
硝酸:
清水;
硝酸银:
氢氟酸:
金属离子银:
碱性溶液。
2.根据权利要求1所述的一种微纳复合绒面结构的多晶黑硅,其特征在于:所述氢氧化钾与硝酸需倒入可密封的玻璃容器中,然后通过玻璃搅拌杆进行缓慢匀速的搅拌。
3.根据权利要求1所述的一种微纳复合绒面结构的多晶黑硅,其特征在于:所述氢氟酸的浓度为5-8mol/L,所述硝酸银的浓度为0.1-0.5mol/L。
4.根据权利要求1所述的一种微纳复合绒面结构的多晶黑硅,其特征在于:所述碱性溶液设置为氢氧化钠强碱性溶液。
5.根据权利要求1所述的一种微纳复合绒面结构的多晶黑硅,其特征在于:所述清水需为烧开后放置到常温的开水。
6.根据权利要求1所述的一种微纳复合绒面结构的多晶黑硅,其特征在于:
该微纳复合绒面结构的多晶黑硅包括如下步骤的方法制备得到:
S1:将硅片放入由氢氧化钾与硝酸组成的混合腐蚀溶液中50-250s后将其取出并通过清水进行清洗,然后得到具有微米绒面结构的多晶硅片;
S2:将S1步骤中得到的具有微米绒面结构的多晶硅片放入到硝酸银与氢氟酸组成的溶液中,并添加金属离子银,静置2-4min,获得具有微纳复合绒面结构的多晶硅片;
S3:将S2步骤中的多晶硅片在放入到碱性溶液,与多晶硅片进行化学反应,静置2-4min,取出并通过清水进行清洗,然后通过烘干装置即可获得纳米级类金字塔结构的微纳复合绒面结构多晶黑硅。
CN201910222768.6A 2019-03-22 2019-03-22 一种微纳复合绒面结构的多晶黑硅制备方法 Pending CN111719186A (zh)

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