CN111712768B - Processing device - Google Patents
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- CN111712768B CN111712768B CN201980012389.2A CN201980012389A CN111712768B CN 111712768 B CN111712768 B CN 111712768B CN 201980012389 A CN201980012389 A CN 201980012389A CN 111712768 B CN111712768 B CN 111712768B
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- 238000012545 processing Methods 0.000 title claims abstract description 128
- 238000000034 method Methods 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000003754 machining Methods 0.000 claims abstract description 27
- 230000008569 process Effects 0.000 claims abstract description 14
- 238000010586 diagram Methods 0.000 claims abstract description 9
- 238000005259 measurement Methods 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 description 107
- 238000004140 cleaning Methods 0.000 description 23
- 238000012546 transfer Methods 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 239000007788 liquid Substances 0.000 description 7
- 238000007670 refining Methods 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- -1 for example Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012790 confirmation Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/18—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form
- G05B19/409—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by using manual data input [MDI] or by using control panel, e.g. controlling functions with the panel; characterised by control panel details or by setting parameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Automation & Control Theory (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Human Computer Interaction (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Machine Tool Sensing Apparatuses (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Numerical Control (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
A processing device for processing a substrate is provided with: a substrate holding unit that holds a substrate; a processing unit that processes a processing surface of the substrate held by the substrate holding unit; and a display unit that displays a schematic diagram of the substrate, and that displays processing information when processing the substrate in association with the schematic diagram. The display unit has a condition input screen for inputting machining conditions, and displays the inputted machining conditions in association with the outline drawing on the condition input screen.
Description
Technical Field
The present application is based on the priority claimed in Japanese patent application No. 2018-025702, filed on Japanese China, 2-month 16, and the contents of which are incorporated herein by reference.
The present invention relates to a processing apparatus for processing a substrate.
Background
In recent years, in a process for manufacturing a semiconductor device, a semiconductor wafer (hereinafter, referred to as a wafer) having a plurality of devices such as electronic circuits formed on a surface thereof is ground on a back surface of the wafer to thin the wafer.
Grinding the back surface of the wafer is performed by, for example, a processing apparatus provided with: a rotatable chuck for holding the surface of the wafer; and a grinding wheel which is provided with a grinding wheel for grinding the back surface of the wafer held by the suction cup, is rotatably configured and is annular. In this processing apparatus, the back surface of a wafer is ground by pressing a grinding wheel (grinding wheel) against the back surface of the wafer while rotating a chuck (wafer) and the grinding wheel.
Further, for example, patent document 1 proposes a machining device further including a touch panel for inputting machining conditions. The touch panel displays at least a machining condition setting screen, and one or more input fields for inputting numerical data of a machining condition are arranged in the machining condition setting screen. The constitution is as follows: when an operator touches an input field displayed on a touch operation panel and intended to input numerical data, a circular image for inputting numerical data is displayed in the vicinity of the input field, and the operator touches the outer periphery of the circular image and draws the circular image in the outer Zhou Chaodi direction to increase the numerical value of the input field, and draws the circular image in a second direction opposite to the first direction to decrease the numerical value of the input field.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open publication 2016-15042
Disclosure of Invention
Problems to be solved by the invention
However, the touch panel described in patent document 1 only shows the name of the input item, and it is difficult to understand the association with the actual processing, and the operator may input an error condition in the input field. Further, a plurality of input items are displayed in parallel, and there is a high possibility that an operator inputs the input items by mistake. Accordingly, there is room for improvement in conventional touch panels.
The present invention has been made in view of the above-described circumstances, and an object thereof is to improve visibility of a display portion of a processing apparatus and to improve operability of inputting processing conditions.
Solution for solving the problem
One aspect of the present invention to solve the above-described problems is a processing apparatus for processing a substrate, the processing apparatus including: a substrate holding unit that holds a substrate; a processing unit that processes a processing surface of the substrate held by the substrate holding unit; and a display unit that displays a schematic diagram of the substrate, and that displays processing information when processing the substrate in association with the schematic diagram.
ADVANTAGEOUS EFFECTS OF INVENTION
According to one aspect of the present invention, the display unit of the processing apparatus can visually display processing information when processing the substrate in association with the outline drawing of the substrate. Therefore, it is possible to easily understand the association between the processing information and the processing, and to improve the visibility of the display unit, for example, to improve the operability when inputting the processing conditions.
Drawings
Fig. 1 is a plan view schematically showing the outline of the structure of a processing apparatus according to the present embodiment.
Fig. 2 is a side view schematically showing the structure of a wafer.
Fig. 3 is a flowchart showing main steps of the processing.
Fig. 4 is an example of a common condition input screen.
Fig. 5 is an example of a common condition input screen.
Fig. 6 is an example of a common condition input screen.
Fig. 7 is an example of a common condition input screen.
Fig. 8 is an example of an individual condition input screen.
Fig. 9 is an example of the overall state display screen.
Fig. 10 is an example of an individual state display screen.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are given the same reference numerals, and overlapping description thereof is omitted.
First, the configuration of the machining device according to the present embodiment will be described. Fig. 1 is a plan view schematically showing the outline of the structure of the processing apparatus 1. In the following, the X-axis direction, the Y-axis direction, and the Z-axis direction, which are orthogonal to each other, are defined for the purpose of specifying the positional relationship, and the positive Z-axis direction is defined as the vertical upward direction.
In the processing apparatus 1 of the present embodiment, a wafer W as a substrate shown in fig. 2 is thinned. The wafer W is, for example, a semiconductor wafer of a silicon wafer, and has a three-layer structure in which a silicon layer S, a device layer D, and a tape layer P are laminated in the stated order. The silicon layer S is a layer constituting the main body of the wafer W. The device layer D is a layer including a plurality of devices such as electronic circuits. The tape layer P is a layer of protective tape attached to the device layer D to protect the device. In the following description, the surface to be processed (i.e., the surface of the silicon layer S) of the wafer W is referred to as "processed surface W1", and the surface opposite to the processed surface W1 (i.e., the surface of the tape layer P) is referred to as "non-processed surface W2".
As shown in fig. 1, the processing apparatus 1 has a structure in which, for example, a carry-in/out station 2 and a processing station 3 are integrally connected, and a cassette C capable of accommodating a plurality of wafers W is carried in/out between the carry-in/out station 2 and the outside, and the processing station 3 performs a predetermined process on the wafers W. The carry-in/out station 2 and the processing station 3 are arranged side by side in the Y-axis direction.
The loading/unloading station 2 is provided with a cassette loading table 10. In the illustrated example, a plurality of, for example, four cartridges C are placed in a row on the cartridge placement stage 10 so as to be free in the X-axis direction.
In the carry-in/out station 2, for example, a display panel 20 as a display unit is provided on a side surface of the cassette loading table 10 on the negative Y-axis direction side. The display panel 20 displays a condition input screen for inputting processing conditions (processing steps) when processing the wafer W and a state display screen for displaying the state of the wafer W being processed.
A wafer transfer area 30 is provided adjacent to the carry-in/out station 2 in the Y-axis forward direction of the cassette stage 10, for example. The wafer transfer area 30 is provided with a wafer transfer device 32 that is movable along a transfer path 31 extending in the X-axis direction. The wafer carrier 32 has a carrier fork 33 and a carrier pad 34 as wafer holding sections for holding the wafers W. The front end of the transport fork 33 is branched into two parts, and suctions and holds the wafer W. The carrier fork 33 carries, for example, the wafer W before grinding. The transfer pad 34 has a circular shape having a diameter longer than that of the wafer W in a plan view, and holds the wafer W by suction. The transfer pad 34 is used for transferring the wafer W after the grinding process, for example. The carrier fork 33 and the carrier pad 34 are configured to be movable in the horizontal direction, in the vertical direction, around the horizontal axis, and around the vertical axis, respectively.
In the processing station 3, processing such as grinding and cleaning is performed on the wafer W. The processing station 3 has a rotary table 40, a conveying unit 50, a calibration unit 60, a first cleaning unit 70, a second cleaning unit 80, a rough grinding unit 90 as a processing portion, a middle grinding unit 100 as a processing portion, and a finish grinding unit 110 as a processing portion.
The turntable 40 is configured to be rotatable by a rotation mechanism (not shown). Four suction cups 41 as substrate holding units for sucking and holding the wafer W are provided on the turntable 40. The suction cups 41 are arranged on the same circumference uniformly, that is, at every 90 degrees, as the turntable 40. By rotating the turntable 40, the four suction cups 41 can move to the transfer position A0 and the processing positions A1 to A3.
In the present embodiment, the transfer position A0 is a position on the X-axis positive direction side and the Y-axis negative direction side of the turntable 40, and the second cleaning unit 80, the alignment unit 60, and the first cleaning unit 70 are provided in parallel on the Y-axis negative direction side of the transfer position A0. The calibration unit 60 and the first cleaning unit 70 are stacked in the order described above. The first machining position A1 is a position on the X-axis positive direction side and the Y-axis positive direction side of the turntable 40, and is used for disposing the rough grinding unit 90. The second machining position A2 is a position on the X-axis negative direction side and the Y-axis positive direction side of the turntable 40, and is used for disposing the intermediate grinding unit 100. The third machining position A3 is a position on the X-axis negative direction side and the Y-axis negative direction side of the turntable 40, and is used for disposing the refining unit 110.
The suction cup 41 is held to the suction cup base 42. The suction cup 41 and the suction cup base 42 are configured to be rotatable by a rotation mechanism (not shown).
The conveying unit 50 is an articulated robot including a plurality of, for example, three arms 51. The three arms 51 are each configured to be rotatable. A transfer pad 52 for sucking and holding the wafer W is attached to the arm 51 at the front end. Further, a vertical movement mechanism 53 for moving the arm 51 in the vertical direction is attached to the arm 51 at the base end. The transfer unit 50 having this configuration can transfer the wafer W to the transfer position A0, the alignment unit 60, the first cleaning unit 70, and the second cleaning unit 80.
In the calibration unit 60, the orientation in the horizontal direction of the wafer W before the grinding process is adjusted. For example, the position of the notch of the wafer W is detected by a detecting unit (not shown) while the wafer W held by a spin chuck (not shown) is rotated, and the orientation of the wafer W in the horizontal direction is adjusted by adjusting the position of the notch.
In the first cleaning unit 70, the processed surface W1 of the wafer W after the grinding process is cleaned, more specifically, spin cleaning is performed. For example, while rotating the wafer W held by the spin chuck (not shown), a cleaning liquid is supplied from a cleaning liquid nozzle (not shown) to the processing surface W1 of the wafer W. In this way, the supplied cleaning liquid diffuses on the work surface W1 to clean the work surface W1.
In the second cleaning unit 80, the non-processed surface W2 of the wafer W, that is, the tape layer P, in a state where the wafer W after the grinding process is held by the carrier pad 52 is cleaned, and the carrier pad 52 is cleaned.
In the rough grinding unit 90, the processed surface W1 of the wafer W is rough-ground. The rough grinding unit 90 includes a rough grinding section 91, and the rough grinding section 91 includes an annular rough grinding wheel (not shown) that is rotatable. The rough grinding part 91 is movable in the vertical direction and the horizontal direction along the stay 92. Then, the wafer W held by the suction cup 41 is subjected to rough grinding on the processing surface W1 of the wafer W by rotating the suction cup 41 and the rough grinding wheel, respectively, while the processing surface W1 is brought into contact with the rough grinding wheel, and lowering the rough grinding wheel. In this case, a grinding fluid, for example, water is supplied to the back surface of the wafer W.
In the intermediate grinding unit 100, the processing surface W1 of the wafer W is subjected to intermediate grinding. The middle grinding unit 100 includes a middle grinding portion 101, and the middle grinding portion 101 includes a ring-shaped middle grinding wheel (not shown) that is rotatable. The center grinding section 101 is configured to be movable in the vertical direction and the horizontal direction along the stay 102. In addition, the size of the grinding particles of the intermediate grinding wheel is smaller than the size of the grinding particles of the rough grinding wheel. Then, the suction cup 41 and the intermediate grinding wheel are rotated while the processing surface W1 of the wafer W held by the suction cup 41 is brought into contact with the intermediate grinding wheel, and the intermediate grinding wheel is lowered to perform intermediate grinding on the processing surface W1. In this case, a grinding fluid, for example, water is supplied to the back surface of the wafer W.
In the refining unit 110, the processed surface W1 of the wafer W is refined. The refining unit 110 includes a refining unit 111, and the refining unit 111 includes a ring-shaped rotatable refining wheel (not shown). The grinding section 111 is movable in the vertical direction and the horizontal direction along the stay 112. In addition, the grinding particles of the finish grinding wheel have a smaller particle size than the grinding particles of the intermediate grinding wheel. Then, the suction cup 41 and the grinding wheel are rotated while the processing surface W1 of the wafer W held by the suction cup 41 is brought into contact with each other, and the grinding wheel is lowered to grind the processing surface W1. In this case, a grinding fluid, for example, water is supplied to the back surface of the wafer W.
The processing apparatus 1 is provided with a control unit 120. The control unit 120 is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W by the processing apparatus 1. The program storage unit also stores a program for controlling operations of the driving systems of the various processing units, the conveying devices, and the like to realize processing described later in the processing device 1. The program may be recorded on a computer-readable storage medium H such as a computer-readable Hard Disk (HD), a Flexible Disk (FD), a Compact Disk (CD), a magneto-optical disk (MO), and a memory card, and may be installed from the storage medium H to the control unit 120.
The processing station 3 is further provided with a tape thickness measuring unit (not shown) that measures the thickness of the tape layer P of the wafer W and a total thickness measuring unit (not shown) that measures the total thickness of the wafer W.
The tape thickness measuring unit is provided between the aligning unit 60 and the delivery position A0, for example, and measures the thickness of the tape layer P of the wafer W held by the transfer pad 52 of the transfer unit 50 being transferred from the aligning unit 60 to the delivery position A0. For the tape thickness measuring unit, a known measuring instrument can be used, for example, an optical system sensor using white light confocal (confocal).
The total thickness measuring units are provided in the grinding units 90, 100, and 110, for example. For the total thickness measuring unit, a known measuring instrument, for example, a contact type measuring instrument can be used. In each of the grinding units 90, 100, 110, the thickness of the silicon layer S can be calculated by subtracting the thickness of the tape layer P measured by the tape thickness measuring unit and the thickness of the device layer D known in advance from the total thickness of the wafer W measured by the total thickness measuring unit. In each of the grinding units 90, 100, and 110, the thickness of the silicon layer S may be directly measured, for example, using a noncontact measuring device.
Next, a processing performed by the processing apparatus 1 configured as described above will be described.
First, a cassette C containing a plurality of wafers W is placed on the cassette stage 10 of the carry-in/out station 2. In the cassette C, the wafer W is stored such that the non-processed surface W2 of the wafer W on which the tape layer P is provided faces upward in order to suppress deformation of the tape layer P.
Next, the wafers W in the cassette C are taken out by the transfer fork 33 of the wafer transfer device 32, and transferred to the processing station 3. At this time, the front and rear surfaces of the wafer W are turned over by the carrier fork 33 so that the processed surface W1 of the wafer W faces upward.
The wafer W carried to the processing station 3 is handed over to the calibration unit 60. Then, in the calibration unit 60, the orientation of the wafer W in the horizontal direction is adjusted (step T1 of fig. 3).
Next, while the wafer W is being conveyed by the conveying unit 50, the thickness of the tape layer P is measured by the tape thickness measuring unit. The measurement result of the tape thickness measurement means is output to the control unit 120.
Next, the wafer W is transported from the alignment unit 60 to the transfer position A0 by the transport unit 50, and transferred to the chuck 41 at the transfer position A0. Thereafter, the suction cup 41 is moved to the first processing position A1. Then, the processed surface W1 of the wafer W is rough-polished by the rough polishing unit 90 (step T2 in fig. 3).
In step T2, the lowering of the rough grinding section 91 (rough grinding wheel) and the grinding of the machined surface W1 by the rough grinding section 91 are performed in a plurality of steps. In each step, the descent speed of the rough grinding wheel is different. The number of steps is not particularly limited, but is arbitrarily selected from, for example, 1 to 5. For example, the first step is a step involving so-called gas cutting, and the second step is followed by changing the lowering speed change of the rough grinding wheel. Further, after these multiple steps of lowering the rough grinding wheel, so-called sparkless grinding (a state in which the rough grinding wheel stops lowering but the rough grinding wheel continues to rotate) and retracting (a state in which the rough grinding wheel rises but the rough grinding wheel continues to rotate) are continuously performed. Further, these multiple steps, spark-less grinding, and tool withdrawal are also performed in the intermediate grinding in step T3 and the finish grinding in step T4, which will be described later.
In step T2, the total thickness of the wafer W is measured by the total thickness measuring means, and the measurement result of the total thickness measuring means is output to the control unit 120. In the control section 120, the thickness of the silicon layer S is calculated based on the total thickness of the wafer W, the thickness of the tape layer P, and the thickness of the device layer D. The intermediate grinding in the step T3 and the fine grinding in the step T4, which will be described later, are also performed by measuring the total thickness of the wafer W to calculate the thickness of the silicon layer S.
Next, the suction cup 41 is moved to the second processing position A2. Then, the processing surface W1 of the wafer W is subjected to the finish polishing by the finish polishing unit 100 (step T3 in fig. 3).
Next, the suction cup 41 is moved to the third processing position A3. Then, the processed surface W1 of the wafer W is refined by the refining unit 110 (step T4 in fig. 3).
Then, the suction cup 41 is moved to the delivery position A0. Here, the processing surface W1 of the wafer W is cleaned by a cleaning liquid using a cleaning liquid nozzle (not shown) (step T5 in fig. 3). In this step T5, the processing surface W1 is washed off to some extent.
Next, the wafer W is transferred from the transfer position A0 to the second cleaning unit 80 by the transfer unit 50. Then, in the second cleaning unit 80, the non-processed surface W2 (the tape layer P) of the wafer W is cleaned while the wafer W is held by the carrier pad 52, and the wafer W is dried (step T6 in fig. 3).
Next, the wafer W is transferred from the second cleaning unit 80 to the first cleaning unit 70 by the transfer unit 50. Then, in the first cleaning unit 70, the processed surface W1 of the wafer W is finely cleaned by the cleaning liquid using a cleaning liquid nozzle (not shown) (step T7 in fig. 3). In this step T7, the work surface W1 is washed until it reaches a desired degree of cleanliness, and dried.
Thereafter, the wafers W subjected to all the processes are transported to the cassette C of the cassette mounting stage 10 by the transport pad 34 of the wafer transport device 32. In this way, the series of processing operations in the processing apparatus 1 is completed.
Next, a condition input screen and a status display screen displayed on the display panel 20 will be described.
First, a condition input screen displayed on the display panel 20 will be described. The condition input screen is a screen for inputting processing conditions when processing the wafer W. In the present embodiment, two screens are provided as condition input screens, namely, the screen includes: a common condition input screen for inputting common processing conditions of the processing positions A1 to A3 (rough grinding to fine grinding); and an individual condition input screen for inputting the machining conditions of the machining positions A1 to A3 (rough grinding to fine grinding).
First, a common condition input screen is described. As shown in fig. 4 to 7, a list of input items (left side of the screen) and a schematic view of the wafer (right side of the screen) are displayed on the common condition input screen. The input values of the table and the outline map are linked with each other, and the value input to one of them is reflected on the other. That is, the input values of the processing conditions are displayed in association with each other in the outline.
For wafer diameter, for example, select (e.g., pull down) and input "8" inches or "12" inches. The thickness of the wafer before processing is input for each of the silicon layer thickness reference value, the device layer thickness reference value, and the tape layer thickness reference value.
The grinding amount specifying method is, for example, four methods. The first method is a method of specifying the grinding amount based on the thickness of the silicon layer, and as shown in fig. 4, "Si thickness" is input in the input field. The second method is a method of specifying the grinding amount based on the total thickness of the wafer, and as shown in fig. 5, "total thickness" is input in the input field. The third method is a method of specifying the grinding amount with reference to the upper surface of the silicon layer, and as shown in fig. 6, "Si upper surface" is input in the input field. The fourth method is a method of specifying the grinding amount with reference to the feeding amount of the grinding wheel, and as shown in fig. 7, "feeding amount" is input in the input field. In the common condition input screen, when "Si thickness", "total thickness", "Si upper surface", "feed amount" are input in the input field of the table on the left side of the screen, any one of the schematic diagrams of fig. 4 to 7 corresponding to the grinding amount specification method is displayed in the schematic diagram of the wafer on the right side of the screen. The input can be selected from "Si thick", "total thickness", "Si upper surface", "feed amount" (for example, pull-down).
According to the above-described grinding amount specifying method, the input methods of the final thickness, the A1 grinding amount, the A2 grinding amount, and the A3 grinding amount are different. The grinding amount A1 is a grinding amount when rough grinding is performed at the first machining position A1, the grinding amount A2 is a grinding amount when rough grinding is performed at the second machining position A2, and the grinding amount A3 is a grinding amount when finish grinding is performed at the third machining position A3.
For example, when the grinding amount specification method is "Si thickness" as shown in fig. 4, the final thickness, the A2 grinding amount, and the A3 grinding amount are input. The final thickness is the thickness of the final silicon layer after rough grinding to fine grinding at the processing positions A1 to A3. The entry of each item may be performed in the entry field of the table on the left side of the screen or in the entry field of the outline drawing on the right side of the screen. The final thickness, the A2 grinding amount, and the A3 grinding amount are subtracted from the silicon layer thickness reference value to automatically calculate the A1 grinding amount as shown in the following formula (1).
A1 grinding amount=silicon layer thickness reference value- (final thickness+a2 grinding amount+a3 grinding amount) ·· (1)
For example, when the grinding amount specification method is "total thickness" as shown in fig. 5, the final thickness, the A2 grinding amount, and the A3 grinding amount are input. The final thickness is obtained by adding the thickness of the final silicon layer, the thickness of the device layer, and the thickness of the tape layer after rough grinding to fine grinding at the processing positions A1 to A3. Each input may be performed in the input field of the table on the left side of the screen or in the input field of the outline drawing on the right side of the screen. The final thickness, A2 grinding amount, and A3 grinding amount are subtracted from the total thickness of the wafer obtained by adding the silicon layer thickness reference value, the device layer thickness reference value, and the tape layer thickness reference value as in the following formula (2), and the A1 grinding amount is automatically calculated.
A1 grinding amount= (silicon layer thickness reference value+device layer thickness reference value+tape layer thickness reference value) - (final thickness+a2 grinding amount+a3 grinding amount) · (2)
For example, when the grinding amount specification method is "Si upper surface" as shown in fig. 6, the A1 grinding amount, the A2 grinding amount, and the A3 grinding amount are input. Accordingly, since the grinding amounts are set, the input of the final thickness is not required.
For example, when the grinding amount specifying method is "feed amount" as shown in fig. 7, the final thickness, the A2 grinding amount, and the A3 grinding amount are input. As the feed amount, a position from the attachment position of the grinding wheel to several μm was designated. In the illustrated example, the method is similar to the case of "total thickness" shown in fig. 5, for example.
Next, the individual condition input screen will be described. Individual condition input screens are displayed for each of the machining positions A1 to A3 (rough grinding to fine grinding), for example, by clicking "A1", "A2", and "A3" in the outline on the right side of the common condition input screen shown in fig. 4 to 7.
Fig. 8 is a view showing an individual condition input screen of the processing position "A1" in the case where the grinding amount specification method of the common condition input screen is set to "Si layer". In addition, actually, as individual condition input screens, screens of each combination (total of 12 kinds) of grinding amount specifying methods (four) and machining positions (three) are displayed, but these screens are the same as those of fig. 8, and therefore, description thereof is omitted here.
As shown in fig. 8, a list of input items (left side of the screen), a schematic view (upper right side of the screen) showing the relationship between the grinding wheel and the rotation direction of the chuck, and a schematic view (lower right side of the screen) of the wafer are displayed on the individual condition input screen. The input values of the table and the outline map are linked with each other, and the value input to one of them is reflected on the other. That is, the input values of the processing conditions are displayed in association with each other in the outline.
For the wafer diameter, the wafer diameter inputted in the common condition input screen is automatically displayed. For the processing scheduled time, the time of spark-less grinding and tool withdrawal, which will be described later, is added up to automatically calculate and display. For the grinding water flow rate, the flow rate of the grinding water during grinding is input. The flow rate of the grinding water may be input to the input field of the table on the left side of the screen or to the input field of the outline drawing on the right lower side of the screen. For the rotational speed of the grinding wheel, the rotational speed of the grinding wheel is entered. For the grinding wheel rotation direction, either CW (clockwise rotation from the shaft side to the right) or CCW (counterclockwise rotation from the shaft side to the left) is input. The input of the grinding wheel rotation direction may be performed in the input field of the table on the left side of the screen, or may be performed by clicking an arrow of the outline drawing on the upper right side of the screen.
As described above, in the grinding process, a plurality of steps including gas cutting, spark-less grinding, and tool withdrawal are performed. Each condition is input in the individual condition input screen.
For the number of steps, for example, a value of 1 to 5 is input. Then, the number of steps input is reflected in the outline of the lower right drawing of the screen. In the example of fig. 8, "3" is input as the number of steps, and thus steps 1 to 3 are illustrated in the outline view. Further, step 1 is a step including gas cutting.
As conditions of each of steps 1 to 3, a gas cutting position, a grinding amount of step 2, and a grinding amount of step 3 are inputted, respectively. These inputs may be performed in the input field of the table on the left side of the screen or in the input field of the outline drawing on the right lower side of the screen. The grinding amount of the step 1 is automatically calculated according to the gas cutting position, the grinding amount of the step 2 and the grinding amount of the step 3, and is displayed in a table and a schematic diagram. The area indicates the height position when the lower surface of the silicon layer is set to 0 (zero), and is also automatically calculated from the gas cutting position, the grinding amount in step 2, and the grinding amount in step 3, and displayed in the table and the outline.
As the conditions of each step 1 to 3, the lowering speed of the grinding wheel, the rotational speed of the suction cup, and the rotational direction of the suction cup are input in addition. The processing time is automatically calculated based on the grinding amount and the descent speed. Further, either one of CW and CCW is input for the suction cup rotation direction. The suction cup rotation direction may be input in the input field of the table on the left side of the screen, or by clicking an arrow of the outline drawing on the upper right side of the screen.
As conditions for spark-less grinding, the input time and suction cup rotational speed. And automatically calculating the rotation number of the sucker according to the time and the rotation speed of the sucker. The time and the suction cup rotation speed may be input in the input field of the table on the left side of the screen or in the input field of the outline drawing on the right lower side of the screen.
As conditions for retracting the cutter, the amount of movement of the grinding wheel, the rising speed of the grinding wheel, and the rotational speed of the suction cup are input. The time is automatically calculated based on the movement amount and the rising speed. The shift amount may be input in the input field of the table on the left side of the screen or in the input field of the outline drawing on the right lower side of the screen.
The common condition input screen and the individual condition input screen are examples, and the input processing conditions are not limited to these. In the examples of fig. 4 to 8, the input field in the outline is determined as a part of the machining conditions, but the input field in the outline is not limited to this, and can be set appropriately. In the present embodiment, the common condition input screen and the individual condition input screen are set to separate screens, but they may be set to one screen.
According to the condition input screen of the present embodiment, the summary map is displayed together with the table for input, and the input values of a part are displayed on both the table and the summary map. Thus, the operator can visually confirm the inputted value and easily understand the association of the processing conditions with the actual processing treatment. As a result, the visibility in the condition input screen is improved, and the operability when inputting the machining condition can be improved, and erroneous input can be suppressed. In addition, in the condition input screen, the machining condition can be directly input in the input field of the outline, and thus erroneous input can be further suppressed.
In addition, in the condition input screen, when there is an input error of the machining condition, a warning may be displayed. As the warning, for example, an item having an input error may be highlighted, or the content of the input error may be displayed in a message form. As the input error, various cases can be considered, but for example, when a value to be ground more than a target value is input with respect to the input of the grinding amount, it is determined as the input error. For example, regarding the input of the rotation directions of the grinding wheel and the suction cup, when the rotation directions of these grinding wheel and suction cup are the same, it is determined that the input is wrong. By displaying the warning in this way, erroneous input of the machining condition can be further suppressed.
Next, a status display screen displayed on the display panel 20 will be described. The status display screen is a screen for displaying the status of the wafer W being processed. In the present embodiment, two types of screens are provided as the status display screen, that is, an overall status display screen showing which process is currently being performed at the processing positions A1 to A3 (rough grinding to fine grinding), and an individual status display screen showing the status of the wafer W being processed at each of the processing positions A1 to A3 (rough grinding to fine grinding).
First, the entire status display screen will be described. As shown in fig. 9, a summary view showing positions A0 to A3 of the turntable in the processing station and a list showing the progress of the processing at each processing position A1 to A3 are displayed on the overall state display screen. In each table, steps 1to 3, spark-less grinding, and tool withdrawal were displayed as items, and "o" was displayed for the items after the completion of the treatment. In the example of fig. 9, the first machining position A1 shows "o" for steps 1 and 2, indicating that these steps 1 and 2 are completed.
Next, the individual state display screen will be described. In the individual state display screen, the progress of the processing is shown in more detail for each of the processing positions A1 to A3. The individual state display screen is displayed for each of the machining positions A1 to A3 (rough grinding to fine grinding), and is displayed by clicking "A1", "A2", "A3" in the outline of the overall state display screen shown in fig. 9, for example.
Fig. 10 is an individual state display screen showing the first processing position A1. The same individual state display screen is displayed for the other processing positions A2 and A3. On the individual state display screen, a list (left side of screen) and a schematic view of the wafer (right side of screen) are displayed.
In the table, the set value (target value) and the measured value are displayed for the grinding amount in step 1, the grinding amount in step 2, the grinding amount in step 3, and the amount of movement of the grinding wheel at the time of tool withdrawal, respectively. The set value is a value input and set in the condition input screen. The measurement value is a value calculated from measurement results of the tape thickness measurement unit and the total thickness measurement unit.
In the outline of the wafer, each layer is displayed based on the measured value. That is, the thickness of each layer decreases as grinding proceeds, and the state in which the thickness decreases is shown in real time. In the example of fig. 10, since steps 1 and 2 are completed, the silicon layers corresponding to these steps 1 and 2 are indicated by broken lines, the ground portions of the silicon layers corresponding to step 3 are indicated by broken lines, and the unground portions are indicated by solid lines. In addition, in the outline of the wafer, the measured values are also displayed in association with each other.
The above-described overall state display screen and individual state display screen are examples, and the display screen is not limited thereto. In the present embodiment, the entire state display screen and the individual state display screen are set to separate screens, but they may be set to one screen.
According to the state display screen of the present embodiment, the state (measured value) of the wafer being processed is displayed in the table and in the outline, so that the display performance is improved. Further, the operator can visually confirm the progress of the processing.
In the above embodiment, the case where the condition input screen and the status display screen are displayed on the display panel 20 has been described, but other screens may be displayed on the display panel 20. For example, a condition confirmation screen for confirming the machining condition input in the condition input screen may be displayed on the display panel 20. The condition confirmation screen may be, for example, a screen as shown in fig. 4 to 8, but is a screen which cannot be edited.
In the above embodiment, the tape layer P is provided on the wafer W in order to protect the device layer D, but the protector of the device layer D is not limited thereto. For example, a support substrate such as a support wafer or a glass substrate may be bonded to the wafer W, and the present invention can be applied even in this case.
The configuration of the processing apparatus 1 is not limited to the above embodiment. For example, one of the grinding units of the processing station 3 may also be replaced by a grinding unit. Alternatively, the processing apparatus 1 may be provided with a post-processing apparatus for post-processing the wafer W after grinding.
The embodiments of the present invention have been described above, but the present invention is not limited to this example. It is to be clearly understood that various modifications and corrections may be made by those skilled in the art within the scope of the technical idea described in the claims, and it is to be understood that these modifications and corrections are of course also within the technical scope of the present invention.
Description of the reference numerals
1: A processing device; 2: a carry-in and carry-out station; 3: a processing station; 20: a display panel; 41: a suction cup; 90: a rough grinding unit; 100: a middle grinding unit; 110: a fine grinding unit; 120: a control unit; d: a device layer; p: a tape layer; s: a silicon layer; w: and (3) a wafer.
Claims (6)
1. A processing apparatus that processes a substrate, the processing apparatus comprising:
A substrate holding unit that holds a substrate;
A processing unit that processes a processing surface of the substrate held by the substrate holding unit; and
A display unit for displaying a schematic diagram of the substrate and displaying processing information when processing the substrate in association with the schematic diagram,
The processing information is processing conditions set when the substrate is processed, the display unit has a condition input screen for inputting the processing conditions, the condition input screen includes an input item table and the outline map of the substrate, the processing conditions can be input to both the input item table and the outline map in the condition input screen, and values input to either one of the input item table and the outline map are displayed in association with each other in the other.
2. The processing apparatus according to claim 1, wherein,
The display unit displays not only a schematic view of the substrate but also a schematic view of at least the substrate holding unit or the processing unit.
3. The processing apparatus according to claim 1, wherein,
The processing part is provided with a plurality of processing parts,
The condition input screen includes: a common condition input screen for inputting the common processing conditions of the plurality of processing units; and an individual condition input screen for inputting individual processing conditions of the processing section.
4. The processing apparatus according to claim 1, wherein,
In the condition input screen, a warning is displayed when there is an input error of the machining condition.
5. The processing apparatus according to claim 1, wherein,
The processing information is a measurement value obtained by measuring a state of a substrate being processed,
The display unit has a status display screen on which the measurement value is displayed in association with the outline map.
6. The processing apparatus according to claim 5, wherein,
The processing part processes the processing surface of the substrate through a plurality of steps,
In the state display screen, the measurement value is displayed in association with the outline map for each of the plurality of steps.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-025702 | 2018-02-16 | ||
| JP2018025702 | 2018-02-16 | ||
| PCT/JP2019/003814 WO2019159735A1 (en) | 2018-02-16 | 2019-02-04 | Processing device |
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| CN111712768A CN111712768A (en) | 2020-09-25 |
| CN111712768B true CN111712768B (en) | 2024-06-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201980012389.2A Active CN111712768B (en) | 2018-02-16 | 2019-02-04 | Processing device |
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| Country | Link |
|---|---|
| JP (1) | JP7261786B2 (en) |
| CN (1) | CN111712768B (en) |
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| WO (1) | WO2019159735A1 (en) |
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| CN111843675B (en) * | 2020-07-15 | 2021-09-07 | 郑州龙华机电工程有限公司 | Power equipment on-line monitoring system |
| KR102593254B1 (en) * | 2023-02-27 | 2023-10-25 | 주식회사 베셀 | Semiconductor manufacturing apparatus and semiconductor fabricating method using the same |
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| TW201937585A (en) | 2019-09-16 |
| JPWO2019159735A1 (en) | 2021-02-12 |
| JP7261786B2 (en) | 2023-04-20 |
| WO2019159735A1 (en) | 2019-08-22 |
| CN111712768A (en) | 2020-09-25 |
| TWI816749B (en) | 2023-10-01 |
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