CN111699548B - 基片固持设备和形状度量方法 - Google Patents
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Abstract
一种用于不会使基片屈曲或弯曲地均匀地固持基片的设备和方法,由此使得能够获得该基片的准确形状测量值,例如晶片曲率、z高度值和其他表面特性。技术包括使用液体作为基片的支撑表面,由此提供均匀的支撑。所使用的液体具有与被支撑的基片相同的比重,使得该基片可以浮在该液体上而不会下沉。该基片的均匀支撑能够实现精确的度量。
Description
相关申请的交叉引用
本申请要求于2018年3月19日提交的题为“基片固持设备和形状度量方法”的美国临时专利申请号62/645,128的权益,该申请通过援引以其全部内容并入本文。
背景技术
该申请涉及固持基片(例如晶片)以用于各种处理以及度量技术。
半导体晶片的处理包括许多不同的步骤。这些步骤可以包括涂覆晶片、将晶片暴露于某一图案的光化辐射、蚀刻材料、沉积材料、清洁晶片表面、测量结构、电测试和封装。每个处理步骤通常需要牢固地或充分地固持晶片以进行给定的处理。
发明内容
在半导体制造期间,常见的是执行对晶片的各种测量以改善微制造并且实施过程控制。常规的度量技术包括测量基片的特性,例如临界尺寸(CD)偏差、膜厚度、伪影沉积物等。新兴的度量学和过程控制技术包括校正晶片弯曲度或曲率。然而,由于常规的基片固持机构引起或导致一定程度的弯曲,因此在纳米级上准确地测量曲率是具有挑战性的。
本文的技术提供了一种用于均匀而不弯曲地固持基片的设备和方法,使得可以精确地测量形状测量值,例如晶片曲率、z高度值和其他表面特性。技术包括使用液体作为基片的支撑表面,由此提供均匀的支撑。常规的基片支撑件使用真空吸盘或边缘支撑件。尽管这种支撑件可能足以用于某些处理(例如清洁和蚀刻),但是这种支撑件让给定基片因重力而弯曲,从而使得形状测量变得困难。通过选择具有与被支撑的给定基片相同比重的液体,该给定基片能浮在液体上而不会下沉。本文中的这种固持机构提高了度量精度。
当然,为了清楚起见,已经提出了本文所述的不同步骤的讨论顺序。通常,这些步骤可以按任何适合的顺序执行。另外,尽管可能在本披露的不同地方讨论了本文中的每个不同特征、技术、构造等,但是旨在每个概念可以彼此独立地或彼此组合地执行。因此,可以以许多不同的方式来实施和查看本发明。
注意的是,此发明内容部分并未指明本披露或要求保护的发明的每个实施例和/或递增的新颖方面。相反,此发明内容仅提供了对不同实施例的以及相应常规技术的新颖性点的初步讨论。对于本发明和实施例的附加细节和/或可能的观点而言,读者应查阅本披露如以下所讨论的具体实施方式部分和相应的附图。
附图说明
参考以下结合附图考虑的具体实施方式,对本发明的各种实施例及其许多附带优点的更完整的理解将变得非常明显。附图不一定按比例绘制,而是将重点放在说明实施例、原理、概念上。
图1是根据本文所披露的实施例的在接纳基片之前的基片固持设备的截面视图。
图2是根据本文所披露的实施例的正固持着基片的基片固持设备的截面视图。
图3是根据本文所披露的实施例的正固持着基片的基片固持设备的截面视图。
图4是根据本文所披露的实施例的在接纳基片之前的基片固持设备的截面视图。
图5是根据本文所披露的实施例的正固持着基片的基片固持设备的截面视图。
具体实施方式
本文的技术提供了一种用于均匀而不弯曲基片地固持基片的设备和方法,使得可以精确地测量形状测量值,例如晶片曲率、z高度值和其他表面特性。技术包括使用液体作为基片的支撑表面。液体提供均匀的支撑。
常规的基片支撑件通常使用真空吸盘或边缘支撑件。尽管这种支撑件可能足以用于某些处理(例如清洁和蚀刻),但是这些常规的支撑件让给定基片因重力而弯曲,从而使得形状测量变得困难。例如,如果基片(例如圆形晶片)由相对较小的真空吸盘支撑,则重力的拉动可能会导致弯曲。例如,给定的真空吸盘可以附接至基片的背侧表面的中心部分。该给定的真空吸盘可以接触小于大约20%的基片表面面积。在中心支撑而不是边缘支撑的情况下,晶片的边缘会由于重力而偏转。换句话说,基片本身的重量会导致其边缘向下弯的弯曲。在实践中,这种弯曲对于人眼来说可能并不明显,但是在微观尺度上,当试图测量具有百位数、十位数或甚至个位数纳米值的特性时,这种弯曲可能会很明显。
边缘支撑的基片也会发生弯曲。再次,在基片相对较薄的情况下,当在基片的外围处固持基片时,基片本身的重量会导致弯曲。这次,基片的中心部分会向下偏转。
因此,在各种尺寸的真空吸盘中都会发生基片弯曲。解决此问题的一种选项是使用较小的吸盘或较弱的固持力。不幸的是,使用较小的吸盘或较弱的固持力会改变晶片的形状,或因基片运动而位置改变。
本文的技术提供了均匀的基片支撑,没有重力下垂,这使得能够精确测量基片表面。本文的技术包括使用液体来支撑给定的基片。液体可以容纳在容器或盆中。优选地,选择与要支撑的特定基片比重相匹配的液体。基片和液体比重相匹配意味着基片可以部分沉入液体中,同时仍浮在液体上。可以选择各种液体中的任何一种。例如,可以使用重油、例如二溴甲烷或其衍生物。为了支撑半导体基片(晶片),这些油可以具有与硅相似的比重。其他示例性液体可以包括含有溴化锌或其他添加剂以产生所需的比重的盐水。给定的液体可以选择成通过适当的液体选择或通过包括增加粘度的添加剂(例如甘油)而具有相对较高的粘度。可以理解,可以选择许多类型的液体,并且包括各种添加剂以产生具有期望比重的液体。
使用比重相匹配的液体进行支撑为基片的背侧表面提供了均匀的支撑,但仍会发生基片运动。通过防止基片的(例如由于流体移动的)额外移动就可以提高测量精度。这种附加的固定机构可以包括使用相对较小的真空吸盘,以最小化晶片变形。由于半导体晶片的重量轻,因此可以将针对半导体晶片的给定固持力最小化。替代性机构包括边缘支撑件,该边缘支撑件主要是在基片均匀地由液体支撑时防止基片的横向移动。
在一些实施例中,可以使用相对较薄的膜将基片与液体隔开。在这样的实施例中,基片搁置在膜上,膜进而搁置在液体上。可以将膜选择为柔韧且薄的,使得基片仍然由液体支撑,并且膜仅将液体与基片隔开以防止润湿基片。如果膜足够薄和/或柔韧,则基片可以部分地沉入液体中,直到基片的顶表面与液体的顶表面处于同一水平。
现在参照图1,一个实施例包括用于固持基片(例如晶片)的设备100。设备100包括配置成容纳液体115的容器110。容器110限定顶部开口,使得当容器容纳有液体时,液体的顶表面可用于在该液体的顶表面上放置基片并且从该液体的顶表面移除基片。容器可以是配置用于容纳液体的任何类型的盆或缸。设备100可以具有顶部外壳,该顶部外壳具有用于放置和取出基片的侧开口(未示出)。可以创建各种形状因素。该设备包括基片移送机构140,该基片移送机构配置成将基片105放置在液体115的顶表面上并且从液体的顶表面移除基片。基片移送机构140可以实施为使用各种移送臂和机构。
现在参照图2和图3,基片固持机构配置成当基片105搁置在液体115的顶表面上时防止基片移动。这种基片固持机构可以是真空吸盘120和/或边缘支撑件122。基片105仍然在该基片的底表面上由液体115支撑,但是为了防止基片在液体上移动,可以使用刚性固持机构。这种真空吸盘120则可以附接至基片的底表面。通常不需要强吸合力。真空吸盘可以接触相对较小的表面面积,例如小于基片背侧的百分之十或百分之五的表面面积。当然,可以使用更大的吸盘面积。基片测量可以受益于相对较小的吸盘面积从而基片的大部分由液体支撑以均匀支撑,这防止了重力弯曲。可以代替真空吸盘或除真空吸盘之外还使用边缘支撑件122,以防止在液体上的横向移动和/或帮助快速稳定流体从放置位置的任何移动。
现在参照图4和图5,膜125可以定位在液体115的顶表面上,从而将基片105与液体隔开。使用这种膜125,基片105可以保持干燥或不含油(取决于所使用的液体)。膜125可以具有足够的柔韧性或松弛度以允许晶片部分地沉入液体中。该膜可以足够柔韧,以使基片可以部分地沉入液体中,并且使得基片的顶表面和晶片的顶表面彼此在同一平面上或彼此大致齐平。图4示出了在将基片105放置在膜125上之前的设备100,而图5展示了使用液体115支撑基片,其中膜125将基片与液体隔开。
液体可以选择成具有与基片比重相匹配的比重。换句话说,液体比重大约等于基片比重。
该设备可以包括测量装置150,该测量装置配置成在基片被固持在液体的顶表面上(具有或不具有中间膜)时测量基片的顶表面的形状。这种形状测量可以包括例如收集基片的工作表面上的相对z高度值,以形成z高度偏差的图。形状测量可以包括整体地或局部地对基片的弯曲度或曲率绘图。可以在容器上方定位各种常规的度量装置以测量基片的工作表面。
另一实施例包括用于固持基片的设备。该设备包括配置用于容纳液体的容器。容器限定顶部开口,使得当容器容纳液体时,液体的顶表面可用于放置基片并且移除基片。膜定位在容器中并且配置成当容器容纳液体时与液体接触。基片移送机构配置成将基片放置在膜上并且从膜上移除基片。该膜足够柔韧以允许基片至少部分地沉入液体中,并且因此受益于基片整个背侧表面的均匀流体支撑。该设备可以包括基片固持机构,该基片固持机构配置成当该基片搁置在该膜上并且被该液体支撑时,防止该基片移动。
在替代实施例中,所选择使用的液体使该液体具有等于或大于该基片比重的比重。该基片固持机构可以包括真空吸盘,该真空吸盘配置成在该基片搁置在该液体上时附接至该基片的底表面。代替真空吸盘或除真空吸盘之外,该基片固持机构可以包括周界支撑件,在该基片搁置在该膜上时,该周界支撑件在该基片的外围处与该基片接触并且防止该基片在该膜上的横向移动。该设备可以包括测量装置,该测量装置配置成在基片被固持在膜上时,测量基片前侧表面的曲率,和或测量其他晶片特性,例如在基片表面上坐标位置处的z高度。
其他实施例包括固持基片的方法。在这种方法中,在容器中提供第一液体。容器限定开口,该开口足够大以接纳基片。膜定位在容器中,使得该膜与第一液体的顶表面接触。基片定位在容器中的膜上。选择足够柔韧的膜使得基片可以至少部分地沉入第一液体中。在该基片由该第一液体支撑时,可以将该基片固定,以为了对该基片进行表面测量而防止该基片横向移动。
可以将第一液体选择和/或修改成该第一液体具有与基片比重相匹配的比重,或具有等于或大于基片比重的比重。可以将第二液体添加到容器的第一液体中。第二液体增加了第一液体的粘度。可以使用附接至基片的底表面的真空吸盘来固定基片,其中真空吸盘接触基片底表面的小于百分之十的表面面积。固定该基片可以包括使用周界支撑机构,该周界支撑机构配置成当该基片由第一液体支撑时防止基片横向移动。方法可以进一步包括:在基片被支撑在第一液体上时测量该基片的曲率值;在基片被支撑在第一液体上时,测量基片顶表面的基片上坐标位置处的z高度值;或测量第一液体上的基片或装置的其他特性。
另一实施例包括固持基片的方法。在该方法中,在容器中提供第一液体。容器限定开口,该开口足够大以接纳基片。基片定位在容器中的第一液体上。在基片搁置在第一液体上时固定基片以防止基片横向移动。在容器中提供第一液体可以包括将第一液体选择成具有与基片比重相匹配的、或者等于或大于基片比重的比重。可以将第二液体添加到容器的第一液体中。第二液体增加了第一液体的粘度。固定该基片可以包括使用附接至该基片的底表面的真空吸盘,该真空吸盘接触该基片底表面的小于百分之十的表面面积。固定该基片可以包括使用周界支撑机构,该周界支撑机构配置成当该基片由第一液体支撑时防止基片横向移动。方法还可以包括在基片被支撑在第一液体上时,测量该基片的表面特性。
本文的技术还包括用于固持基片的方法和用于测量基片的方法。这种方法包括在容器中提供第一液体。容器限定开口,该开口足够大以接纳基片。将膜定位在容器中,使得该膜与第一液体的顶表面接触。将基片定位在容器中的膜上。选择足够柔韧的膜使得基片由第一液体支撑。可选地,省略膜并且将基片直接放置在液体上。在基片由第一液体支撑时,固定基片以防止基片横向移动。
在容器中的第一液体包括将第一液体选择成具有与基片比重相匹配的、或者等于或大于基片比重的比重。可以将第二液体添加到容器的第一液体中。第二液体增加了第一液体的粘度。可以使用真空吸盘,如上所述的其他固定装置或其他常规的固定装置。该方法可以包括执行各种度量操作,例如:在基片被支撑在第一液体上时测量该基片的曲率值;在基片被支撑在第一液体上时,测量基片顶表面的基片上坐标位置处的z高度值;或在基片被支撑在第一液体上时测量基片的其他表面特性。
在前面的描述中,已经阐明了具体细节,诸如处理系统的特定几何形状以及其中使用的各种部件和工艺的描述。然而,应当理解,本文的技术可以在脱离这些具体细节的其他实施例中实践,并且这些细节是出于解释而非限制的目的。已经参考附图描述了本文披露的实施例。类似地,出于解释的目的,已经提出了具体的数字、材料和配置以便提供透彻的理解。然而,可以在没有这些具体细节的情况下实践实施例。具有基本相同的功能结构的部件由相似的附图标记表示,并且因此可以省略任何多余的描述。
已经将各种技术描述为多个不连续的操作以帮助理解各个实施例。描述的顺序不应解释为意味着这些操作是必须依赖于顺序的。实际上,这些操作无需按照呈现的顺序执行。可以以与所描述的实施例不同的顺序来执行所描述的操作。在附加实施例中,可以执行各种附加操作和/或可以省略所描述的操作。
如本文所使用的,“基片”或“目标基片”通常是指根据本发明被处理的物体。基片可以包括器件(特别是半导体或其他电子器件)的任何材料部分或结构,并且可以例如是基础基片结构,诸如半导体晶片、光罩、或基础基片结构之上或叠加在基础基片结构上的层,诸如薄膜。因此,基片不限于图案化或未图案化的任何特定基础结构、下层或上覆层,而是设想包括任何这种层或基础结构,以及层和/或基础结构的任何组合。本说明书可能参考特定类型的基片,但这仅出于说明目的。
本领域技术人员还将理解,可以对上述技术的操作做出许多改变,同时仍然实现本发明的相同目的。本披露的范围旨在涵盖这种改变。因此,本发明的实施例的前述描述不旨在是限制性的。相反,在所附权利要求中呈现了对本发明实施例的任何限制。
Claims (9)
1.一种用于固持基片的设备,该设备包括:
容器,该容器被配置用于容纳液体,该容器限定顶部开口,使得当该容器容纳液体时,液体的顶表面可用于在液体的顶表面上放置基片并且从液体的顶表面移除基片;
基片移送机构,该基片移送机构被配置成将基片放置在液体的顶表面上并且从液体的顶表面移除基片;
膜,该膜定位在液体的顶表面上,该膜将基片与液体隔开,使得基片移送机构被配置成将基片放置在膜上并且从膜移除基片,该膜被配置成具有足够的柔韧性以允许基片部分地沉入液体中;
基片固持机构,该基片固持机构被配置成当基片搁置在液体的顶表面上时防止基片移动;
测量装置,该测量装置被配置成在基片被固持在液体的顶表面上时测量基片的前侧表面的形状,其中基片的背侧表面与前侧表面相反,其中,测量基片的前侧表面的形状包括:生成基片的前侧表面上的z高度值的图。
2.如权利要求1所述的设备,其中,该膜足够柔韧,以允许液体的顶表面和基片的顶表面彼此齐平。
3.如权利要求1所述的设备,其中,液体被选择成使液体具有与基片的比重相匹配的比重。
4.如权利要求1所述的设备,其中,基片固持机构包括真空吸盘,该真空吸盘被配置成在基片搁置在液体上时附接至基片的底表面。
5.如权利要求4所述的设备,其中,真空吸盘接触到的基片的表面面积小于液体接触到的基片表面面积的百分之十。
6.如权利要求1所述的设备,其中,基片固持机构包括周界支撑件,在基片搁置在液体上时,该周界支撑件在基片的外围处与基片接触并且防止基片在液体上横向移动。
7.一种用于固持基片的设备,包括:
容器,该容器被配置用于容纳液体,该容器限定顶部开口,使得当该容器容纳液体时,液体的顶表面可用于放置基片并且移除基片,液体被选择成使液体具有等于或大于基片的比重的比重;
膜,该膜定位在容器中,并且被配置成当容器容纳液体时与液体接触,该膜使所述基片与液体分开;
基片移送机构,该基片移送机构被配置成将基片放置在膜上并从膜移除基片,该膜足够柔韧以允许基片至少部分地沉入液体中;
基片固持机构,该基片固持机构使配置成当基片搁置在膜上并且被液体支撑时防止基片移动;以及
测量装置,该测量装置被配置成在基片被固持在膜上时测量基片的前侧表面的曲率,该测量装置被配置成在基片被固持在膜上时测量基片的前侧表面上的坐标位置处的z高度。
8.如权利要求7所述的设备,其中,基片固持机构包括真空吸盘,该真空吸盘被配置成在基片搁置在液体上时附接至基片的底表面。
9.如权利要求7所述的设备,其中,基片固持机构包括周界支撑件,在基片搁置在膜上时,该周界支撑件在基片的外围处与基片接触并且防止基片在膜上的横向移动。
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