CN111696877B - 用于接合至少两个接合构件的装置和方法 - Google Patents
用于接合至少两个接合构件的装置和方法 Download PDFInfo
- Publication number
- CN111696877B CN111696877B CN202010166757.3A CN202010166757A CN111696877B CN 111696877 B CN111696877 B CN 111696877B CN 202010166757 A CN202010166757 A CN 202010166757A CN 111696877 B CN111696877 B CN 111696877B
- Authority
- CN
- China
- Prior art keywords
- foil
- stack
- joining
- carrier element
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005304 joining Methods 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims description 79
- 239000011888 foil Substances 0.000 claims abstract description 137
- 230000001681 protective effect Effects 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- 238000011109 contamination Methods 0.000 claims description 3
- 229920001971 elastomer Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000000806 elastomer Substances 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 38
- 239000000758 substrate Substances 0.000 description 31
- 239000000463 material Substances 0.000 description 16
- 238000001465 metallisation Methods 0.000 description 12
- 239000000919 ceramic Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 238000005245 sintering Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004320 controlled atmosphere Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000003779 heat-resistant material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L21/603—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the application of pressure, e.g. thermo-compression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7501—Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/751—Means for controlling the bonding environment, e.g. valves, vacuum pumps
- H01L2224/75101—Chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/751—Means for controlling the bonding environment, e.g. valves, vacuum pumps
- H01L2224/75101—Chamber
- H01L2224/75102—Vacuum chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75302—Shape
- H01L2224/7531—Shape of other parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75312—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
- H01L2224/75315—Elastomer inlay
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
- H01L2224/75315—Elastomer inlay
- H01L2224/75316—Elastomer inlay with retaining mechanisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
- H01L2224/7532—Material of the auxiliary member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7555—Mechanical means, e.g. for planarising, pressing, stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7565—Means for transporting the components to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75703—Mechanical holding means
- H01L2224/75704—Mechanical holding means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75754—Guiding structures
- H01L2224/75755—Guiding structures in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/758—Means for moving parts
- H01L2224/75821—Upper part of the bonding apparatus, i.e. bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/75981—Apparatus chuck
- H01L2224/75982—Shape
- H01L2224/75983—Shape of the mounting surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/75981—Apparatus chuck
- H01L2224/75982—Shape
- H01L2224/75984—Shape of other portions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/802—Applying energy for connecting
- H01L2224/80201—Compression bonding
- H01L2224/80203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/8301—Cleaning the layer connector, e.g. oxide removal step, desmearing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83022—Cleaning the bonding area, e.g. oxide removal step, desmearing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83053—Bonding environment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83909—Post-treatment of the layer connector or bonding area
- H01L2224/8391—Cleaning, e.g. oxide removal step, desmearing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83909—Post-treatment of the layer connector or bonding area
- H01L2224/83948—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Die Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
一种用于接合两个接合构件的装置,包括:包括支撑表面的第一部分;承载至少一个箔片的第一承载元件;传输单元,布置第一承载元件连同其上布置的至少一个箔片,使得至少一个箔片在垂直方向上布置于第一部分的支撑表面上方;以及在接合堆叠体布置于支撑表面上时向接合堆叠体施加压力的第二部分。接合堆叠体包括布置于支撑表面上的第一接合构件、布置于第一接合构件上的第二接合构件以及布置于第一接合构件和第二接合构件之间的导电连接层。在通过第二部分向接合堆叠体施加压力时,至少一个箔片布置于第二部分和接合堆叠体之间,并被按压到接合堆叠体上,接合堆叠体被按压到第一部分上,从而压缩连接层且在第一和第二接合构件之间形成键合。
Description
技术领域
本公开涉及用于接合至少两个接合构件,尤其是用于将半导体部件烧结到半导体衬底的装置和方法。
背景技术
功率半导体模块装置常常包括布置于外壳中的至少一个半导体衬底。包括多个可控半导体部件(例如,半桥配置的两个或更多IGBT)的半导体装置通常布置于至少一个衬底的至少一个上。每个衬底通常包括衬底层(例如,陶瓷层)、沉积于衬底层的第一侧上的第一金属化层以及沉积于衬底层的第二侧上的第二金属化层。例如,可控半导体部件安装在第一金属化层上。通常,半导体部件被烧结到半导体衬底。烧结层布置于半导体部件中的每一个和半导体衬底之间,然后通过施加定义的压力将半导体部件按压到烧结层上。常常使用硬冲床(hard punches)来施加压力。为了均匀地分布压力,保护半导体部件不受损伤以及可能有害物质的污染,通常在冲床和半导体部件之间布置一个或多个箔片。
需要一种改进的装置和方法,其实现了接合构件、箔片和冲床的容易、快速、按定义以及精确定位。
发明内容
一种用于接合两个接合构件的装置包括:包括支撑表面的第一部分;被配置为承载至少一个箔片的第一承载元件;传输单元,所述传输单元被配置为布置第一承载元件连同其上布置的至少一个箔片,使得所述至少一个箔片在垂直方向上布置于第一部分的支撑表面上方;以及被配置为在接合堆叠体布置于支撑表面上时向接合堆叠体施加压力的第二部分。接合堆叠体包括布置于支撑表面上的第一接合构件、布置于第一接合构件上的第二接合构件以及布置于第一接合构件和第二接合构件之间的导电连接层。在通过第二部分向接合堆叠体施加压力时,至少一个箔片被布置于第二部分和接合堆叠体之间,并被按压到接合堆叠体上,并且接合堆叠体被按压到第一部分上,从而压缩连接层并在第一和第二接合构件之间形成物质与物质的键合。
一种方法包括在第一部分的支撑表面上布置第一接合构件、导电连接层以及第二接合构件,其中所述导电连接层布置于第一接合构件和第二接合构件之间。该方法还包括在第一承载元件上布置至少一个箔片,使用传输单元布置第一承载元件,使得至少一个箔片在垂直方向上布置于第一部分的支撑表面上方;以及利用第二部分向接合堆叠体施加压力,其中,在支撑表面上方布置至少一个箔片并且通过第二部分向接合堆叠体施加压力时,至少一个箔片被布置于第二部分和接合堆叠体之间,并被按压到接合堆叠体上,并且接合堆叠体被按压到第一部分上,从而压缩连接层并在第一接合构件和第二接合构件之间形成物质与物质的键合。
参考以下附图以及描述可以更好地理解本发明。图中的部件未必按比例绘制,而是侧重于示出本发明的原理。此外,在附图中,相似附图标记贯穿不同视图标示对应的部分。
附图说明
图1示出了用于接合两个接合构件的装置的截面图。
图2示意性示出了在执行接合该接合构件的步骤之前,用于接合两个个接合构件的另一装置的截面图。
图3示意性示出了在执行接合该接合构件的步骤之前,图2的装置的截面图。
图4示意性示出了在接合该接合构件的同时,图2的装置的截面图。
图5示意性示出了用于接合两个接合构件的另一装置的截面图。
图6示意性示出了用于接合两个接合构件的另一装置的截面图。
图7示意性示出了在接合该接合构件之前,用于接合两个接合构件的另一装置的截面图。
图8示意性示出了在接合该接合构件之前,图7的装置的截面图。
图9示意性示出了在接合该接合构件的同时,图7的装置的截面图。
图10示意性示出了用于接合两个接合构件的另一装置的截面图。
图11示意性示出了包括几个处理室的装置中不同部件的示范性流程。
图12示意性示出了包括几个处理室的装置中不同部件的另一示范性流程。
图13示意性示出了包括几个处理室的装置中不同部件的另一示范性流程。
具体执行方式
在以下具体实施方式中,参考了附图。附图示出了可以在其中实践本发明的具体示例。要理解的是,相对于各示例描述的特征和原理可以彼此组合,除非明确做出其他表述。在说明书以及权利要求中,将某些元件指定为“第一元件”、“第二元件”、“第三元件”等不能被理解为枚举。相反,这样的指定仅用于标示不同的“元件”。亦即,例如,“第三元件”的存在不需要“第一元件”和“第二元件”的存在。如本文所述的半导体主体可以由(掺杂)半导体材料制成并且可以是半导体芯片或者包括在半导体芯片中。半导体主体具有电连接焊盘并且包括至少一个具有电极的半导体元件。
参考图1,示出了用于接合两个接合构件的装置。该装置包括第一部分41,例如,砧。第一接合构件10和至少一个第二接合构件20可以布置于第一部分41上。第一部分41可以提供平坦支撑表面400,例如,可以在其上布置接合构件10、20。通常,第一接合构件10布置于第一部分41的支撑表面400上,并且位于所述至少一个第二接合构件20和第一部分41之间。可以在第一接合构件10和第二接合构件20之间布置导电连接层30。导电连接层30通常可以是一层金属粉末,例如银粉。
所述装置还包括第二部分42。第二部分42可以被配置成向接合构件10、20施加压力,如图1中的箭头所示。通过这种方式,将至少一个第二接合构件20按压到第一接合构件10上。例如,第二部分42可以包括一个或多个冲床。第二部分42可以由例如金属制成。包括金属或任何其他同样硬材料的冲床常常也称为硬冲床。
通常,在接合所述接合构件10、20的过程期间对第一部分41和第二部分42进行加热。这样的工艺常常是所谓的烧结工艺。不过,在接合过程期间也可能仅加热第一部分41和第二部分42中的一者,或者通过任何其他方式施加热。针对图1中的第一部分41示范性示出了加热元件43。然而,未针对图中的第二部分42具体示出加热元件。例如,可以将第一和第二部分41和42中的至少一个加热到高达100℃、高达200℃、高达300℃或甚至更高。通过这种方式,通过第一部分41和/或第二部分42对分别直接或间接接触第一部分41和第二部分42的第一接合构件10和第二接合构件20进行加热,并经由接合构件10、20将热进一步传递到连接层30。在这个过程期间,连接层30被压紧,并在两个接合构件10、20之间形成固态物质与物质的键合。这样的烧结工艺是公知的,因此,将不会更详细描述。
第一接合构件10可以是例如半导体衬底。半导体衬底常常包括电介质绝缘层、附接到电介质绝缘层的第一金属化层以及附接到电介质绝缘层的第二金属化层。电介质绝缘层设置在第一金属化层和第二金属化层之间。
第一金属化层和第二金属化层中的每一个可以由下述材料构成或包括下述材料中的一种:铜;铜合金;铝;铝合金;在功率半导体模块装置操作期间保持为固态的任何其他金属或合金。半导体衬底可以是陶瓷衬底,即,电介质绝缘层是陶瓷,例如,薄陶瓷层的衬底。陶瓷可以由下述材料构成或包括下述材料中的一种:氧化铝;氮化铝;氧化锆;氮化硅;氮化硼或任何其他电介质陶瓷。例如,电介质绝缘层可以由以下材料构成或包括以下材料之一:Al2O3、AlN或Si3N4。例如,衬底可以是,例如直接铜键合(DCB)衬底、直接铝键合(DAB)衬底或活性金属钎焊(AMB)衬底。此外,衬底可以是绝缘金属衬底(IMS)。例如,绝缘金属衬底通常包括电介质绝缘层,其包括(填充有)诸如环氧树脂或聚酰亚胺的材料。例如,电介质绝缘层的材料可以填充有陶瓷颗粒。这样的颗粒可以包括,例如SiO2、Al2O3、AlN或BrN,并且可以具有大约1μm和大约50μm之间的直径。例如,IMS的第一金属化层可以是相对薄的铜层(例如,厚度在35μm和140μm之间),第二金属化层可以是相对厚的铝层或铜层(例如,厚度在0.6mm和2.0mm之间)。电介质绝缘层通常包括高绝缘电阻并同时具有低的导热系数。然而,衬底也可以是具有非陶瓷电介质绝缘层的常规印刷电路板(PCB)。例如,非陶瓷电介质绝缘层可以由固化树脂构成或包括固化树脂。
所述至少一个第二接合构件20可以包括例如一个或多个半导体主体。通常,一个或多个半导体主体布置于半导体衬底上。布置于半导体衬底上的每个半导体主体可以包括半导体部件,例如二极管、IGBT(绝缘栅双极型晶体管)、MOSFET(金属氧化物半导体场效应晶体管)、JFET(结场效应晶体管)、HEMT(高电子迁移率晶体管)或任何其他适当的可控制半导体元件。一个或多个半导体部件可以在半导体衬底上形成半导体装置。在图1中,示范性示出了两个第二接合构件20。然而,任何其他数量的第二接合构件20也是可能的。
然而,包括半导体衬底的第一接合构件10和包括至少一个半导体部件的至少一个第二接合构件20仅为示例。根据另一示例,所述至少一个第二接合构件20包括至少一个布置于包括基板或热沉的第一接合构件10上的半导体衬底,其中半导体衬底的第二金属化层布置于电介质绝缘层和基板/热沉之间。例如,可以仅将一个衬底布置于基板或热沉上。然而,也可以在同一基板/热沉上布置两个或更多个衬底。然而,任何其他接合构件也是可能的。
在接合过程中,可以在第二部分42与接合堆叠体之间布置至少一个箔片50、51,所述接合堆叠体由第一接合构件10、第二接合构件20和导电连接层30形成。例如,可以在接合堆叠体和第二部分42之间布置补偿箔片50,以便均匀分布由第二部分42施加的压力。补偿箔片50可以包括相对软且耐热的材料。在这种语境下耐热材料是指能够经受在烧结工艺期间发生的温度而没有显著变形的材料。亦即,该材料在高达特定温度之下尺度可以稳定。例如,该材料可以耐热高达150℃和250℃之间的温度。然而,如果在烧结工艺期间发生超过250℃的温度,可能需要该材料耐热高达高于300℃的温度。例如,很多橡胶状或橡胶材料较软并且耐热。另外,很多弹性体较软且耐热。适当材料的一个示例为硅树脂。另一示例是所谓的材料。然而,很多其他材料也是可能的。可以在补偿箔片50下方布置保护箔片51,使得保护箔片51布置在补偿箔片50和布置于第一部分41上的接合堆叠体之间。保护箔片51可以被配置成防止污染物污染接合构件10、20。污染物可能源自例如补偿箔片50。例如,颗粒或物质可能会从补偿箔片50脱离。替代地或此外,污染物可能包括任何其他可能有害的物质或材料,它们可能会不利地影响接合构件10、20或连接层30。保护箔片51可以包括例如惰性聚合物(例如,聚四氟乙烯PTFE或全氟烷氧基PFA)或聚酰亚胺。可以选择至少一个箔片50、51在水平平面(平行于支撑表面400)中的尺寸(长度、宽度),使得由至少一个箔片50、51形成的箔片堆叠体完全覆盖由第一接合构件10、第二接合构件20和连接层30形成的接合堆叠体。
至少一个箔片50、51可以手动地布置于由接合构件10、20形成的接合堆叠体上。其他装置是已知的,其中使用卷对卷处理提供一个或多个箔片50、51。然而,对箔片,尤其是包括超过一个箔片的箔片堆叠体的处理是精细的过程,需要被执行,从而使得箔片被精确布置于接合堆叠体上方。
现在参考图2,根据一个示例的装置还包括第一承载元件60。第一承载元件60被配置为承载至少一个箔片50、51。根据一个示例,第一承载元件60包括框架,其中至少一个箔片50、51被配置为布置于框架之内。可以将每个箔片50、51设置于卷轴或滚轴上,可以从卷轴或滚轴切下具有期望尺寸的箔片块并可以将其布置于第一承载元件60上。例如,第一承载元件60可以包括凸起,其中至少一个箔片50、51可以布置于凸起上并在框架内部,如图2示意性所示。框架可防止箔片从原位偏移。例如,可以根据框架的尺寸来选择箔片的尺寸,从而防止箔片偏移。
根据另一示例,第一承载元件60包括紧固或保持模块。例如,可以利用托架、钳制器或任何其他适当的紧固模块将至少一个箔片50、51保持就位。这样的紧固模块可以连接到例如第一承载元件60的框架。在图6中示意性示出了包括第一紧固模块61的示范性装置。在图6中所示的示例中,第一保持模块61布置于第一承载元件60的框架上,使得它们与至少一个箔片50、51部分地交叠,并防止至少一个箔片50、51在垂直于支撑表面400的垂直方向y上从第一承载元件60脱离。
承载元件60可以布置于第一部分41上或上方,使得布置于承载元件60上的至少一个箔片50、51在垂直方向y上被布置于支撑表面400上方。例如,可以利用传输单元(图2中未明确示出)将承载元件60布置于第一部分41上或上方。传输单元可以包括被配置为例如从组装位置拾取承载元件60并将承载元件60传输或传送到其在第一部分41上或上方的最终停放位置的模块。根据一个示例,传输单元包括诸如机器臂的机器人单元。任何其他适当的传输单元也是可能的。这使得箔片50、51和承载元件60的手动处理成为多余。
再次参考图2,示出了在布置第一承载元件60,使得至少一个箔片50、51处于停放位置之前,布置的截面图。第一承载元件60被示为在垂直方向y上距接合构件10、20的堆叠体一特定距离。
现在参考图3,利用传输单元,可以将第一承载元件60降低到第一部分41上,直到其达到最终停放位置。例如,第一部分41可以包括在垂直方向y上突出的第一区段411。第一区段411可以与第一部分41一体形成(第一部分41和第一区段411被形成为单件)或者可以独立形成(第一部分41和第一区段411被形成为独立件)。第一区段411可以在垂直方向y上突出,使得在第一承载元件60达到其停放位置时,布置于第一承载元件60上的至少一个箔片50、51不直接接触至少一个第二接合构件20。亦即,在接合构件10、20的堆叠体与至少一个箔片50、51之间保留间隙。因此,至少一个箔片50、51的最下方,通常是保护箔片51的最下方,被布置于距接合构件10、20的堆叠体的最上表面第一距离d1处。箔片不接触接合堆叠体,即,d1>0。例如,d1可以至少为1mm。接合构件10、20的堆叠体的最上表面通常是至少一个第二接合构件20的背对第一接合构件10的顶表面。
通过这种方式,保护气体可以在向接合构件10、20施加力之前到达接合堆叠体的顶表面。该装置可以被布置在工艺室(图2-图4中未明确示出)中,可以在工艺室内部生成受控气氛。例如,可以利用特定压力的保护气体填充这样的工艺室。这样的保护气体也可以在将第一承载元件60布置于其停放位置之后填充接合构件10、20的堆叠体和至少一个箔片50、51之间的间隙。保护气体可以防止接合构件10、20和连接层30氧化和/或发生任何其他种类的腐蚀。替代利用保护气体填充工艺室,例如可以在工艺室内部生成真空。保护气体例如可以包括氮气。
如图4所示,接下来可以利用第二部分42在接合构件10、20的堆叠体上施加力F。例如,第二部分42可以在垂直方向y上布置于接合构件10、20的堆叠体和至少一个箔片50、51上方。在朝向接合堆叠体降低第二部分42时,至少一个箔片50、51发生变形并按压在接合构件10、20的堆叠体上。与此同时,可以加热接合构件10、20的堆叠体。连接层30通过这种方式被压紧并硬化,并且随后在第一接合构件10和第二接合构件20之间形成物质与物质的键合。可以在第一接合构件10和第二接合构件20之间形成连接之后去除至少一个箔片50、51,并可以从支撑表面400去除接合构件10、20。
通常通过加热第一部分41或第二部分42或两者来向接合构件10、20施加热。通过在接合构件10、20的堆叠体和第二部分42之间布置至少一个箔片50、51,可以延迟从第二部分42到接合构件10、20的堆叠体的热传递。亦即,可以将第二部分42降低到接合构件10、20的堆叠体上,并可以在特定时间段的持续时间内施加力F。然而,并非在这个时间段的开始就将热立即施加到接合构件10、20的堆叠体,因为需要首先加热至少一个箔片50、51,之后热才可以进一步传递到接合构件10、20的堆叠体。这可能有利地影响第一和第二接合构件10、20之间的(烧结)连接。
通常,使用第一承载元件60在接合构件10、20的堆叠体上方布置至少一个箔片50、51显著简化了至少一个箔片50、51的处理。此外,可以防止箔片50、51在接合工艺之前和期间偏离其正确位置。可以相对于第一部分41在定义的位置布置第一承载元件60,并可以在垂直方向y上距接合构件10、20的堆叠体一定义距离d1处布置至少一个箔片50、51。
将补偿箔片50布置在第一承载元件60上,并且随后将其布置在第二部分42和接合构件10、20的堆叠体之间仅仅为示例。如图5中示范性所示,还可以将补偿箔片50或补偿箔片50的部分附接到第二部分42。例如,一块补偿箔片50可以粘附到第二部分42的每个冲床。在本示例中,箔片堆叠体可以仅包括保护箔片51。然而,通常可以在第一承载元件60上布置任何其他附加或替代箔片。
如图5中进一步所示,装置可以任选地包括第二保持元件45。第二保持元件45可以布置于第一部分41上,尤其是第一部分41的第一区段411上。在第一承载元件60布置于其最终停放位置时,第二保持元件45布置于第一承载元件60和第一部分41的第一区段411之间。任选的第二保持元件45被配置为在接合过程期间保持第一接合构件10就位。具体而言,第二保持元件45可以通过保持第一接合构件10下放到第一部分41上而防止其偏移。例如,第二保持元件45可以在水平方向x上突出,使得它们部分布置成与第一接合构件10的边缘区域相邻。至少一个第二接合构件20常常不布置于第一接合构件10的边缘区域上,使得第一接合构件10的边缘区域不被至少一个第二接合构件20或连接层30覆盖。第二保持元件45可以是独立元件,如图5中所示,或者可以集成于例如第一承载元件60中。
现在参考图7,装置还可以包括支撑框架44,该支撑框架被配置为在将接合堆叠体布置于第一部分41上的其停放位置之前,保持并承载接合堆叠体。支撑框架44可以包括第一区段441和第二区段442。第一区段441可以是布置成最接近第一部分41的区段。第一区段441可以包括凸起,在将接合堆叠体放在第一部分41上的其停放位置之前,接合堆叠体可以停放在凸起上。支撑框架44接下来可以下放到第一部分41的停放区域上(例如,参见图8)。这样的停放区域在图7和图8中被示范性示为凸起。支撑表面400可以在垂直方向y上被布置于停放区域上方的第一高度h1。支撑框架44的第一区段441可以具有垂直方向y上的第二高度h2。第二高度h2可以等于或小于第一高度h1。通过这种方式,如图8中示范性所示,对于h1=h2,可以确保在支撑框架44停放在第一部分41上时,第一接合构件10被放置在支撑表面400上。在图7中所示的示例中,第一部分41可以不包括第一区段411,如上文参考图2-6所述。
第二区段442可以具有垂直方向y上的第三高度h3。第三高度h3可以等于或大于第一接合构件10的第四高度h4。这可能有助于在第一承载元件60到达其最终停放位置时确保第一承载元件60停放在支撑框架44上而非第一接合构件10上。
图8中示出了支撑框架44和第一承载元件60处于其最终停放位置时的示范性装置。箔片堆叠体布置于接合堆叠体上方第一距离处,如上文参考图3所述。同样,图7到图9中未明确示出被配置为拾取并传输第一承载元件60的传输单元。可以利用例如第二承载元件46将支撑框架44放在第一部分41上。在图7和图8中,第二承载元件46被示为处于保持位置。例如,支撑框架44的第二区段442可以形成凸起,其允许第二承载元件46在垂直方向y上提升支撑框架44。第二承载元件46可以是例如机器人单元(图7-图9中未明确示出)的部分。一旦将支撑框架44布置于其最终停放位置,就可以去除第二承载元件46,如图9中示范性所示。图9示意性示出了向接合堆叠体施加力F时的图7和图8的装置。
如上所述,可以在工艺室中执行接合工艺。工艺室100可以包括例如一个或多个独立的子室。根据一个示例(参见图10),工艺室100包括单个子室。例如,可以首先在接合堆叠体上方布置一个或多个箔片50、51,接下来可以向工艺室100中转移包括接合堆叠体和箔片堆叠体的装置。根据另一示例,可以在工艺室100内部组装接合堆叠体,并可以接下来在接合堆叠体上方布置至少一个箔片50、51。然后可以闭合工艺室100,并可以在工艺室100内部生成定义的气氛。例如,可以在工艺室100内部生成真空,或者可以利用保护气体填充工艺室100。然后,可以通过向接合堆叠体施加压力来执行接合工艺,接合堆叠体随后可以保留在工艺室100中的定义的气氛中,直到其冷却到定义的温度。然而,这仅仅是示例。如果工艺室100仅包括单个子室,则执行多个后续接合工艺需要相当长时间。这是因为每个接合堆叠体都需要从工艺开始(生成受控气氛)直到工艺最后结束(接合堆叠体冷却到定义的温度)保留在工艺室100的同一子室中。
因此,在一些情况下,如果工艺室100包括两个或更多个子室,这可能更有效率。图11中示范性示出了用于接合布置于包括三个子室101、102、103的工艺室100中的两个接合构件的装置。可以首先在接合堆叠体上方布置一个或多个箔片50、51,接下来可以向工艺室的第一子室101中转移该装置。还可以在第一子室101内部相对于接合堆叠体布置箔片堆叠体。可以在第一子室101内部生成定义的气氛。
然后可以将接合堆叠体和箔片堆叠体转移到第二子室102。可以在第二子室102中执行实际接合工艺。在第二子室102中执行接合工艺的同时,可以密封第一子室101和第二子室102之间的通道。当在第二子室102中执行接合工艺时,可以在第一子室101中在下一接合堆叠体上布置下一箔片堆叠体,并可以在第一子室101中生成定义的气氛。在执行接合工艺之后,可以将接合堆叠体转移到第三子室103。第三子室103也可以提供定义的气氛。亦即,接合堆叠体可以在第三子室103中的定义的气氛中冷却。同时,可以将下一接合堆叠体从第一子室101移动到第二子室102,并可以执行下一接合工艺。同时,可以将另一接合堆叠体和箔片堆叠体转移到第一子室101,并可以生成定义的气氛。通过这种方式,可以在不同子室101、102、103中布置不同的接合堆叠体,并可以同时执行不同子工艺。
在接合该接合构件10、20之后,可以仅将接合的接合构件10、20转移到第三子室103。另一方面,可以将箔片堆叠体转移回到第一子室101,例如,以在下一接合工艺中重新使用。
箔片50、51中的至少一些可以重新用于接下来的接合工艺。例如,可以在两次或更多次接合工艺(例如,20次接合工艺)期间使用补偿箔片50。也可以在两次或更多次接合工艺中使用保护箔片51。根据一个示例,可以比补偿箔片50更频繁地替换保护箔片51。在第一承载元件60上布置箔片50、51简化了在两次接合工艺之间交换一个或多个箔片的过程。例如,可以在第一子室101内部进行一个或多个箔片50、51的交换。可以手动或自动执行一个或多个箔片50、51的交换。在第三子室103中,可以进一步处理接合后的接合构件10、20。例如,可以在第三子室103中清洁或冷却接合构件10、20。如果使用承载框架44承载接合构件10、20,则可以在第三子室103内部或在从第三子室103去除接合构件10、20之后,从支撑框架44卸载接合构件。
根据另一示例,如图12中所示,可以在将该装置转移到第一子室101之前组装该装置,如上文已经参考图11所述,或者组装可以发生于第一子室101内部。可以在第一子室101内部生成定义的气氛,并然后可以将接合堆叠体转移到第二子室102。接下来可以在第二子室102中执行接合工艺。然而,接下来可以将箔片堆叠体与接合构件10、20一起转移到第三子室103。亦即,箔片堆叠体可以与接合构件10、20穿过相同的子室101、102、103。在离开第三子室103之后,可以将箔片堆叠体转移回第一子室101,同时从该装置取下接合构件10、20。根据图13示意性示出的另一示例,可以在第三子室103中或在将箔片堆叠体转移到第三子室103之前准备箔片堆叠体,而在第一子室101或在将接合堆叠体转移到第一子室101之前准备接合构件10、20。可以在第二子室102中完全组装该装置。然后可以在第二子室102中执行接合工艺。之后,可以将箔片堆叠体转移回第三子室103,同时将接合构件10、20转移回第一子室101进行进一步处理(例如,冷却)。亦即,在图13中所示的示例中,生成定义的气氛以及冷却接合堆叠体可以发生于同一子室(例如,第一子室101)中,与已经参考图11和图12所述的形成对比。
根据一个示例,在卷轴/辊轴上提供箔片,并可以在第一承载元件60上组装箔片之前从卷轴/滚轴上切下箔块。根据一个示例,可以在独立的卷轴上提供每个箔片。然而,还可以在单个卷轴上提供堆叠的箔带。机器人单元可以拾取切割的带,如果需要,在第一承载元件60上组装箔片堆叠体。另一机器人单元(传输单元)然后可以将第一承载元件60连带其上布置的箔片堆叠体转移到工艺室。再一机器人单元可以将接合堆叠体转移到工艺室。因此,该装置的整个组装可以自动实现,因此,相对较快且节省成本。可以与工艺室相邻布置载体。例如,可以在载体中插入多个支撑框架,连带其上布置的接合构件。相应的机器人单元可以抓紧支撑框架之一并将其置于工艺室内部。在执行接合工艺之后,可以将支撑框架转移回载体,并可以在工艺室内部布置下一支撑框架。机器人单元的每个可以包括被配置为通过产生真空拾取元件的真空单元。组装过程可以包括拾取和放置过程。
在示范性生产线中,接合构件10、20可以在加载机处进入生产线。在下一个室(清洁模块)中,可以清洁接合构件10、20。在后续组装室(烧结堆叠模块)中,可以在支撑框架上布置接合构件10、20。根据一个示例,在每个支撑框架上布置超过一个接合堆叠体。然后将支撑框架,连同其上布置的接合构件10、20转移到工艺室(烧结挤压模块)。例如,可以在组装室中在接合堆叠体上方布置箔片堆叠体,并且箔片堆叠体可以与接合堆叠体一起进入工艺室。在接合构件10、20之间形成连接之后,可以将整个装置转移到冷却室(冷却模块)。然而,可以将箔片堆叠体从冷却室转移回到组装室重复使用。在冷却接合构件之后,可以卸载支撑框架。亦即,可以从支撑框架取出现在连接的接合构件。可以重复使用支撑框架。同样的情形适用于第一承载元件,第一承载元件也可以重复使用。在一个或多个后续工艺之后,仅需要替换箔片。
Claims (15)
1.一种用于接合两个接合构件(10,20)的装置,包括:
第一部分(41),所述第一部分(41)包括支撑表面(400);
第一承载元件(60),所述第一承载元件(60)被配置为承载至少一个箔片(50,51);
传输单元,所述传输单元被配置为布置所述第一承载元件(60)连同其上布置的至少一个箔片(50,51),使得所述至少一个箔片(50,51)在垂直方向(y)上布置于所述第一部分(41)的所述支撑表面(400)上方;以及
第二部分(42),所述第二部分(42)被配置为在接合堆叠体布置于所述支撑表面(400)上时向所述接合堆叠体施加压力,其中,
所述接合堆叠体包括布置于所述支撑表面(400)上的第一接合构件(10)、布置于所述第一接合构件(10)上的第二接合构件(20)、以及布置于所述第一接合构件(10)和所述第二接合构件(20)之间的导电连接层(30),并且
在通过所述第二部分(42)向所述接合堆叠体施加压力时,所述至少一个箔片(50,51)布置于所述第二部分(42)和所述接合堆叠体之间并且被按压到所述接合堆叠体上,并且所述接合堆叠体被按压到所述第一部分(41)上,从而压缩所述连接层(30)并且在所述第一接合构件(10)和所述第二接合构件(20)之间形成键合。
2.根据权利要求1所述的装置,其中在通过所述第一承载元件(60)承载的所述至少一个箔片(50,51)布置于所述支撑表面(400)上方时,并且在通过所述第二部分(42)向所述接合堆叠体施加压力之前,所述至少一个箔片(50,51)中的被布置成最接近所述接合堆叠体的第一箔片(51)布置于距所述接合堆叠体的最上表面第一距离d1处,其中d1>0。
3.根据权利要求1或2所述的装置,其中所述第一承载元件(60)包括具有凸起的框架,其中在通过所述第一承载元件(60)承载至少一个箔片(50,51)时,所述至少一个箔片(50,51)的边缘区域停放在所述框架的所述凸起上。
4.根据权利要求1或2所述的装置,其中所述第一部分(41)和所述第二部分(42)中的至少一个包括加热元件(43)。
5.根据权利要求1或2所述的装置,还包括第二承载元件(44),所述第二承载元件(44)被配置为在将所述接合堆叠体布置在所述第一部分(41)的所述支撑表面(400)上之前承载所述接合堆叠体。
6.根据权利要求5所述的装置,其中在所述至少一个箔片(50,51)布置于所述第一部分(41)的所述支撑表面(400)上方时,所述第一承载元件(60)布置于所述第二承载元件(44)上。
7.根据权利要求1或2所述的装置,其中在所述至少一个箔片(50,51)布置于所述第一部分(41)的所述支撑表面(400)上方时,所述第一承载元件(60)在所述垂直方向(y)上部分地布置于所述第一接合构件(10)的边缘区域上方。
8.根据权利要求1或2所述的装置,其中所述第一承载元件(60)包括紧固或保持模块,所述紧固或保持模块被配置为在所述至少一个箔片(50,51)布置于所述第一承载元件(60)上时保持所述至少一个箔片(50,51)就位。
9.根据权利要求1或2所述的装置,其中所述至少一个箔片(50,51)包括以下各项中的至少一项:
补偿箔片(50),所述补偿箔片(50)被配置为将通过所述第二部分(42)施加的压力均匀分布在所述接合堆叠体之上;以及
保护箔片(51),所述保护箔片(51)被配置为防止污染物污染所述接合构件(10,20)。
10.根据权利要求9所述的装置,其中:
所述补偿箔片(50)包括硅树脂,或者耐受至少高达250℃的弹性体;和/或
所述保护箔片(51)包括惰性聚合物或聚酰亚胺。
11.根据权利要求1或2所述的装置,还包括保持元件(45),所述保持元件(45)被配置为布置于所述第一部分(41)上,并且在所述第一承载元件(60)布置于所述第一部分(41)上的最终停放位置时,所述保持元件(45)布置于所述第一承载元件(60)和所述第一部分(41)之间。
12.根据权利要求11所述的装置,其中所述保持元件(45)被配置为在所述垂直方向(y)上将所述第一接合构件(10)向下保持在所述支撑表面(400)上。
13.根据权利要求1或2所述的装置,还包括以下各项中的至少一项:
第一机器人单元,所述第一机器人单元被配置为拾取所述至少一个箔片(50,51)并且将所述至少一个箔片(50,51)组装在所述第一承载元件(60)上;
第二机器人单元,所述第二机器人单元被配置为将所述第一承载元件(60)连同其上布置的所述至少一个箔片(50,51)转移到工艺室(100);以及
第三机器人单元,所述第三机器人单元被配置为将所述接合堆叠体转移到所述工艺室(100)。
14.一种用于接合两个接合构件(10,20)的方法,包括:
在第一部分(41)的支撑表面(400)上布置第一接合构件(10)、导电连接层(30)和第二接合构件(20),其中所述导电连接层(30)布置于所述第一接合构件(10)和所述第二接合构件(20)之间;
在第一承载元件(60)上布置至少一个箔片(50,51);
使用传输单元布置所述第一承载元件(60),使得所述至少一个箔片(50,51)在垂直方向(y)上布置于所述第一部分(41)的所述支撑表面(400)上方;以及
利用第二部分(42)向接合堆叠体施加压力,其中,
在所述至少一个箔片(50,51)布置于所述支撑表面(400)上方并且通过所述第二部分(42)向所述接合堆叠体施加压力时,所述至少一个箔片(50,51)布置于所述第二部分(42)和所述接合堆叠体之间,并且被按压到所述接合堆叠体上,并且所述接合堆叠体被按压到所述第一部分(41)上,从而压缩所述连接层(30)并且在所述第一接合构件(10)和所述第二接合构件(20)之间形成键合。
15.根据权利要求14所述的方法,其中,在包括一个或多个子室(101,102,103)的工艺室(100)中执行在所述第一接合构件(10)和所述第二接合构件(20)之间形成物质与物质的键合,并且
所述接合堆叠体以及所述第一承载元件(60)连同所述至少一个箔片(50,51)都被组装并且转移到第一子室(101)中,其中在所述第一子室(101)中生成定义的气氛并且接下来将所述接合堆叠体和箔片堆叠体转移到第二子室(102),其中在所述第二子室(102)中执行接合工艺;或者
所述接合堆叠体被组装并且转移到第一子室(101)中,其中在所述第一子室(101)中生成定义的气氛,在第三子室(103)中组装所述第一承载元件(60)连同所述至少一个箔片(50,51),并且接下来将所述接合堆叠体以及所述第一承载元件(60)连同布置于其上的所述至少一个箔片(50,51)转移到第二子室(102),其中在所述第二子室(102)中执行所述接合工艺。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP19162070.7A EP3709342A1 (en) | 2019-03-12 | 2019-03-12 | Arrangement and method for joining at least two joining members using a foil on a carrier element interposed between the upper one of the joining members and a pressure exerting part |
EP19162070.7 | 2019-03-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111696877A CN111696877A (zh) | 2020-09-22 |
CN111696877B true CN111696877B (zh) | 2023-11-28 |
Family
ID=65801843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010166757.3A Active CN111696877B (zh) | 2019-03-12 | 2020-03-11 | 用于接合至少两个接合构件的装置和方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11676933B2 (zh) |
EP (1) | EP3709342A1 (zh) |
CN (1) | CN111696877B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102020116083B3 (de) | 2020-06-18 | 2021-08-12 | Semikron Elektronik Gmbh & Co. Kg | Vorrichtung mit einem Werkstückträger zur Drucksinterverbindung eines ersten und zweiten Verbindungspartners und Verfahren zur Drucksinterverbindung dafür |
DE102021118949A1 (de) | 2021-07-22 | 2023-01-26 | Semikron Elektronik Gmbh & Co. Kg | Vorrichtung und Verfahren zur Drucksinterverbindung |
NL2031849B1 (en) * | 2022-05-13 | 2023-11-20 | Boschman Tech Bv | Micro-controlled Environment Carrier with Pedestals |
DE102022114121B3 (de) | 2022-06-03 | 2023-08-03 | Semikron Elektronik Gmbh & Co. Kg | Verfahren und Vorrichtung zur Drucksinterverbindung |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000068633A (ja) * | 1998-08-25 | 2000-03-03 | Seiko Epson Corp | 圧着方法および圧着装置 |
JP2004296746A (ja) * | 2003-03-26 | 2004-10-21 | Nikkiso Co Ltd | 加圧装置および回路素子の実装方法 |
CN101874288A (zh) * | 2007-10-30 | 2010-10-27 | 株式会社尼康 | 基板保持部件、基板接合装置、叠层基板制造装置、基板接合方法、叠层基板制造方法和叠层半导体装置制造方法 |
NL2015895B1 (en) * | 2015-12-02 | 2017-06-28 | Besi Netherlands Bv | Device and method for thermal compression bonding electronic components on a carrier. |
WO2018215524A1 (en) * | 2017-05-26 | 2018-11-29 | Danfoss Silicon Power Gmbh | Arrangement for producing an electronic assembly by sintering |
EP3428954A1 (en) * | 2017-07-14 | 2019-01-16 | Infineon Technologies AG | Method for establishing a connection between two joining partners |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100671028B1 (ko) * | 2006-06-23 | 2007-01-17 | 김성철 | 반도체 칩 본딩 방법 |
US20090289097A1 (en) * | 2008-05-21 | 2009-11-26 | Weng-Jin Wu | Wafer Leveling-Bonding System Using Disposable Foils |
JP2010034423A (ja) * | 2008-07-30 | 2010-02-12 | Fujitsu Ltd | 加圧加熱装置及び方法 |
DE102010020696B4 (de) * | 2010-05-17 | 2012-11-08 | Danfoss Silicon Power Gmbh | Verfahren zum NTV-Sintern eines drei-dimensionale Konturen aufweisenden Halbleiterbauelementes |
TWI564106B (zh) * | 2011-03-28 | 2017-01-01 | 山田尖端科技股份有限公司 | 接合裝置以及接合方法 |
DE102014114097B4 (de) * | 2014-09-29 | 2017-06-01 | Danfoss Silicon Power Gmbh | Sinterwerkzeug und Verfahren zum Sintern einer elektronischen Baugruppe |
US10083844B2 (en) * | 2015-03-31 | 2018-09-25 | Shindengen Electric Manufacturing Co., Ltd. | Method of manufacturing bonded body |
DE102015120156B4 (de) * | 2015-11-20 | 2019-07-04 | Semikron Elektronik Gmbh & Co. Kg | Vorrichtung zur materialschlüssigen Verbindung von Verbindungspartnern eines Leistungselekronik-Bauteils und Verwendung einer solchen Vorrichtung |
DE102016102162A1 (de) * | 2016-02-08 | 2017-08-10 | Pink Gmbh Thermosysteme | Sintervorrichtung |
CN108778697B (zh) | 2016-02-26 | 2021-08-13 | 克里奥瓦克公司 | 用于封装组合件、封装设备和过程的加热头及制作加热头的制造过程 |
IT201700000191A1 (it) * | 2017-01-02 | 2018-07-02 | Amx Automatrix S R L | Pressa e metodo di sinterizzazione di componenti elettronici su un substrato |
-
2019
- 2019-03-12 EP EP19162070.7A patent/EP3709342A1/en active Pending
-
2020
- 2020-03-02 US US16/806,844 patent/US11676933B2/en active Active
- 2020-03-11 CN CN202010166757.3A patent/CN111696877B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000068633A (ja) * | 1998-08-25 | 2000-03-03 | Seiko Epson Corp | 圧着方法および圧着装置 |
JP2004296746A (ja) * | 2003-03-26 | 2004-10-21 | Nikkiso Co Ltd | 加圧装置および回路素子の実装方法 |
CN101874288A (zh) * | 2007-10-30 | 2010-10-27 | 株式会社尼康 | 基板保持部件、基板接合装置、叠层基板制造装置、基板接合方法、叠层基板制造方法和叠层半导体装置制造方法 |
NL2015895B1 (en) * | 2015-12-02 | 2017-06-28 | Besi Netherlands Bv | Device and method for thermal compression bonding electronic components on a carrier. |
WO2018215524A1 (en) * | 2017-05-26 | 2018-11-29 | Danfoss Silicon Power Gmbh | Arrangement for producing an electronic assembly by sintering |
EP3428954A1 (en) * | 2017-07-14 | 2019-01-16 | Infineon Technologies AG | Method for establishing a connection between two joining partners |
Also Published As
Publication number | Publication date |
---|---|
US11676933B2 (en) | 2023-06-13 |
EP3709342A1 (en) | 2020-09-16 |
CN111696877A (zh) | 2020-09-22 |
US20200294956A1 (en) | 2020-09-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111696877B (zh) | 用于接合至少两个接合构件的装置和方法 | |
US8104667B2 (en) | Method for connecting a component with a substrate | |
US20170309544A1 (en) | Semiconductor device and method for manufacturing semiconductor device | |
EP3208839A1 (en) | Substrate with cooler for power modules and method for producing same | |
US10115646B2 (en) | Semiconductor arrangement, semiconductor system and method of forming a semiconductor arrangement | |
JP3846699B2 (ja) | 半導体パワーモジュールおよびその製造方法 | |
US8999758B2 (en) | Fixing semiconductor die in dry and pressure supported assembly processes | |
US20200027752A1 (en) | Apparatus and Method for Bending a Substrate | |
CN111868900A (zh) | 电子组件安装模块的制造方法 | |
EP2765597A2 (en) | System for sintering using a pressurized gas or liquid | |
US10020278B2 (en) | Method for positioning a semiconductor chip on a carrier and method for material-fit bonding of a semiconductor chip to a carrier | |
US20120075826A1 (en) | pressure support for an electronic circuit | |
JP2021150548A (ja) | 半導体製造装置及び半導体装置の製造方法 | |
US20240055422A1 (en) | Method for manufacturing semiconductor module | |
US20240055392A1 (en) | Method of manufacturing semiconductor device | |
US20230187403A1 (en) | Method for manufacturing double-sided cooling type power module and double-sided cooling type power module | |
EP4346341A1 (en) | Method for forming a power semiconductor module arrangement | |
JPH07130925A (ja) | 半導体装置およびその製造方法 | |
TWI733011B (zh) | 電子零件安裝模組之製造方法 | |
US20240055391A1 (en) | Method for manufacturing semiconductor module | |
TWI745572B (zh) | 電子零件安裝模組 | |
US20240105542A1 (en) | Power module and method of manufacturing same | |
EP4280269A1 (en) | Power semiconductor module arrangement and method for producing the same | |
JP2007095866A (ja) | セラミック基板の製造方法 | |
EP2800131A1 (en) | Method for sinter bonding semiconductor devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |