CN111694472A - Water-soluble release agent, conductive film and preparation method thereof - Google Patents

Water-soluble release agent, conductive film and preparation method thereof Download PDF

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CN111694472A
CN111694472A CN202010525471.XA CN202010525471A CN111694472A CN 111694472 A CN111694472 A CN 111694472A CN 202010525471 A CN202010525471 A CN 202010525471A CN 111694472 A CN111694472 A CN 111694472A
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film
conductive
layer
water
template
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戴晓
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Suzhou Dengshi New Material Technology Co ltd
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Suzhou Dengshi New Material Technology Co ltd
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0005—Separation of the coating from the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5873—Removal of material
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04102—Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04104—Multi-touch detection in digitiser, i.e. details about the simultaneous detection of a plurality of touching locations, e.g. multiple fingers or pen and finger

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Abstract

The invention relates to a water-soluble release agent, which is a mixed aqueous solution of a surfactant and saccharides, and has the characteristics of realizing good release effect and being beneficial to the growth of a conductive layer; the production process is environment-friendly, no potential safety hazard exists, and the prepared conductive film has good uniformity and consistency, high conductivity and abundant conductive material selection.

Description

Water-soluble release agent, conductive film and preparation method thereof
[ technical field ] A method for producing a semiconductor device
The invention relates to the field of flexible electronic manufacturing, in particular to a water-soluble release agent, a preparation method of a conductive film using the water-soluble release agent and the prepared conductive film.
[ background of the invention ]
The preparation of silver/copper nanowire films in the prior art mainly comprises the following steps of firstly preparing a silver/copper nanowire dispersion liquid by a chemical synthesis method, then coating the dispersion liquid on the surface of a transparent flexible substrate, and forming a layer of silver/copper nanowire network on the surface of the substrate after evaporating a solvent in the dispersion liquid, thereby obtaining the film with certain electric conduction and light transmission performance.
The chemical synthesis method needs a large amount of chemical reagents and generates a large amount of toxic and harmful chemical waste liquid, so that the method is not environment-friendly and the waste liquid treatment cost is high; secondly, more potential safety hazards exist in the production process; the silver/copper nanowire network formed by coating the dispersion liquid is randomly arranged, the uniformity and consistency of the film are poor, and interface resistance exists among the nanowires, so that the resistivity of the film is far higher than the conductivity of the silver/copper; the range of materials for preparing metal nanowires by a chemical solution method is very limited, and for example, the preparation of metal nanowires of tungsten, chromium, titanium and the like by the chemical solution method is not reported. In addition, the chemical solution method has great limitation in the preparation of alloy nanowires and multilayer metal composite nanowires.
The release agent in the prior art cannot give consideration to two aspects of good release effect and conductive layer growth.
[ summary of the invention ]
Based on the above, the invention provides the water-soluble release agent beneficial to the growth of the conductive layer, the preparation method of the conductive film using the water-soluble release agent and the prepared conductive film, and solves the technical problems of environmental unfriendliness, potential safety hazard, poor uniformity and consistency, low conductivity, limited materials and the like in the prior art.
The invention provides a water-soluble release agent which is a mixed aqueous solution of a surfactant and saccharides, wherein the content ratio of the surfactant to the saccharides is 1:10-1:1, the total concentration of the surfactant and the saccharides is 1% -20%, and the surfactant is one or a mixture of more of linear alkyl benzene sodium sulfonate, fatty alcohol-polyoxyethylene ether sodium sulfate, fatty alcohol-polyoxyethylene ether ammonium sulfate, sodium lauryl sulfate or lauroyl glutamic acid; the saccharide is one or more of glucose, maltose, sucrose or fructose.
Preferably, the saccharide is maltose.
Also provided is a method for preparing a conductive film, comprising the steps of: the method comprises the following steps: providing a planar hollow latticed template, and forming a water-soluble release layer on the template by using a water-soluble release agent; step two: forming a conductive grid film on the surface of the template on which the water-soluble release layer is formed by using a film coating method to obtain an initial film; step three: directly obtaining a transition film from the initial film, or attaching the side of the initial film with the conductive grid film to a substrate layer to obtain the transition film; step four: and immersing the transition film in water to separate the conductive grid film from the template to obtain the conductive film.
Preferably, the first step includes immersing the template in the water-soluble release agent for 1-5 minutes, and then drying the template with air, wherein the concentration of the water-soluble release agent is 5% -10%.
Preferably, in the second step, the thickness of the conductive mesh film is 50nm-1 μm.
Preferably, the conductive grid film is a copper film layer and has a single-layer structure, and the thickness of the film layer is 200nm-500 nm.
Preferably, the conductive grid film is of a multilayer structure and sequentially comprises a first aluminum film layer, a second copper film layer and a third aluminum film layer, the thickness of the first aluminum film layer is 50nm-150nm, the thickness of the second copper film layer is 300nm-500nm, and the thickness of the third aluminum film layer is 50nm-150 nm.
Preferably, the third step further includes disposing an adhesive layer between the conductive mesh film and the substrate layer, where the adhesive layer is made of one of acrylate, silica gel, and ultraviolet curing adhesive.
Preferably, the hollow aperture of the conductive grid film is 1-500 μm, and the grid line width is 50nm-1 μm.
Also provides a conductive film prepared by the method.
The technical scheme provided by the invention has the following beneficial effects: firstly, the preparation method adopts an environment-friendly physical method, avoids the generation of toxic and harmful chemical waste liquid, and has safe production process; secondly, the uniformity and the consistency of the conductive film are good, the conductive film is integrally formed without an interface, and the conductivity is high; thirdly, the conductive material is rich in selection and low in cost; fourthly, the water-soluble release agent provided by the invention has the characteristics of realizing a good release effect and being beneficial to the growth of a conductive layer.
[ description of the drawings ]
FIG. 1 is a schematic flow chart of a preparation method in the first embodiment of the present invention;
FIGS. 2(a) -2(d) are schematic diagrams showing the detailed process of the preparation method in the first embodiment of the present invention;
FIG. 3 is an enlarged view of a portion of a conductive film according to one embodiment of the present invention;
FIG. 4 is a schematic diagram of the performance of a conductive film prepared according to one embodiment of the present invention;
FIG. 5 is a schematic flow chart of a production process in example two of the present invention;
FIGS. 6(a) -6(d) are schematic diagrams showing the detailed flow of the production process in example two of the present invention;
FIG. 7 is a partially enlarged view of a conductive film obtained in accordance with a second embodiment of the present invention;
FIG. 8 is a diagram illustrating the performance of the conductive film obtained in the second embodiment of the present invention.
[ detailed description ] embodiments
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The water-soluble release agent is a mixed aqueous solution of a surfactant and saccharides, the content ratio of the surfactant to the saccharides is 1:10-1:1, the total concentration of the surfactant and the saccharides is 1% -20%, and the surfactant is one or a mixture of more of linear alkyl benzene sodium sulfonate, fatty alcohol-polyoxyethylene ether sodium sulfate, fatty alcohol-polyoxyethylene ether ammonium sulfate, lauryl alcohol sodium sulfate or lauroyl glutamic acid; the saccharide is one or more of glucose, maltose, sucrose or fructose. The coating has the characteristics of easy water solubility, easy film formation on the surface of the micro-nano structure, stable chemical property and no corrosivity to metal, and has the effects that a compact and uniform conducting layer can be formed on the surface of a conducting material in the coating process, and the newly grown conducting layer naturally falls off from a template through dissolving the release layer. Preferably, the total concentration of the surfactant and the saccharide is 5% -10%, and maltose is selected as the saccharide, so that a good release effect is realized, and the growth of the conductive layer is facilitated.
A preparation method of a conductive film comprises the following steps:
the method comprises the following steps: providing a planar hollow latticed template, forming a water-soluble release layer on the template by using a water-soluble release agent with the concentration of 1% -20%, specifically, immersing the template in the water-soluble release agent for 1-5 minutes, and drying by using compressed air or nitrogen; or a spraying method can be utilized to enable the surface of the template to be adhered with a layer of water-soluble release agent, and then compressed air or nitrogen is used for blowing off redundant water-soluble release agent and moisture, so that a uniform and compact water-soluble release layer is formed on the surface of the template.
In addition, the shape and size of the planar hollowed latticed template can be adjusted according to the size of an actual product, and the hollowed aperture of the template is 1-500 microns, preferably 20-200 microns; the grid line width is 50nm-1 μm, the template thickness range is 500 nm-100 μm, and preferably, the template thickness range is 1 μm-5 μm; the mesh shape may be square, rectangular, circular, oval, diamond, parallelogram, or other polygonal shape.
Preferably, the concentration of the water-soluble release agent is adjusted to be 5% -10%, the colloid viscosity is moderate in the range, a uniform and compact water-soluble release layer can be formed on the surface of the template, the mesh of the template cannot be blocked, or extra accumulation is formed on the surface of the template, the formation of the water-soluble release layer is easier, and meanwhile, the deposition of a conductive material in the later step is facilitated, so that a conductive film with good uniformity and high yield is formed.
Step two: forming a conductive grid film on the surface of the template on which the water-soluble release layer is formed by using a film coating method to obtain an initial film; specifically, a conductive grid film can be grown on the surface of the conductive grid film by a film coating method such as evaporation, magnetron sputtering, electron beam deposition, vapor phase chemical deposition or pulsed laser deposition, and the thickness of the conductive grid film is 50nm-1 μm.
In addition, the conductive grid film can be of a single-layer structure, and the thickness of the conductive grid film is 200nm-500 nm; the multilayer structure can also be a multilayer structure, and the multilayer structure can be the superposition of different material film layers, the thickness of each layer is adjusted according to the performance requirements and the material characteristics, for example, in the three-layer structure, the thickness of the peripheral two layers is 50nm-150nm, and the thickness of the middle layer is 300nm-500nm, so that the multilayer structure can meet the requirements of electric conductivity and light transmittance and flexibility.
The conductive material is also rich in selection, can be simple substance metal or alloy metal, and can also be graphene or other conductive materials. The shape and size, the hollow hole diameter, the grid line width and the like of the conductive grid film are the same as those of the template.
Step three: directly obtaining a transition film from the initial film, or attaching one surface of the initial film, which is provided with the conductive grid film, to a substrate layer to obtain the transition film; the conductive grid film can be adsorbed on the substrate layer by means of static electricity, and an adhesive layer can be added between the conductive grid film and the substrate layer, wherein the adhesive layer is made of one of acrylate, silica gel and ultraviolet curing adhesive. The substrate layer is a transparent material such as a PET layer or a glass substrate.
Selecting whether to adopt a substrate layer or not according to the physical characteristics of the material of the conductive grid film, wherein the substrate layer is not adopted when the physical characteristics of the conductive grid film can be directly input into the subsequent processing; when the physical property of the conductive grid film is not suitable for being directly put into the next processing, the conductive grid film is selected to be adsorbed on a substrate layer and then put into the next processing.
Step four: and immersing the transition film in water for 2-10 minutes, and dissolving the water-soluble release layer in the water to separate the conductive grid film from the template to obtain the conductive film.
(embodiment one)
Referring to fig. 1 and fig. 2(a) -2(d) in combination, the method for preparing the conductive film in this embodiment includes the following steps:
the method comprises the following steps: providing a planar hollow grid-shaped template 101, wherein the material is nickel, the size is 10cm multiplied by 10cm, the mesh is square, the aperture is 20 mu m, the grid line width is 1 mu m, and the thickness of the template 101 is 2 mu m. Dissolving glucose and linear alkyl benzene sodium sulfonate in deionized water according to the mass ratio of 2:1 to prepare the formed water-soluble mold release agent. The template 101 is immersed in a water-soluble release agent with the concentration of 5% for 1-5 minutes, and is taken out and dried by compressed air, so that a water-soluble release layer 102 is formed on the surface of the template 101.
Step two: a copper film 103 was formed on the surface of the template 101 on which the water-soluble release layer 102 was formed by vacuum deposition to obtain an initial thin film 11, and the thickness of the copper film was 500 nm. The shape and size, the hollow aperture, the grid line width and the like of the copper film 103 are the same as those of the template 101.
Step three: coating an adhesive layer 104 on the base layer 105, and attaching the surface of the initial film 11 with the copper film 103 to the base layer 105 through the adhesive layer 104 to obtain the transition film 12, wherein the base layer 105 is made of PET (polyethylene terephthalate) and the adhesive layer is made of silica gel.
Step four: and immersing the transition thin film 12 in water for 2-10 minutes to dissolve the water-soluble release layer 102 in the water, and separating the copper film 103 from the template 101 to obtain the conductive thin film 10.
As shown in fig. 3, which is a partially enlarged view of the conductive thin film 10, it can be seen that the conductive thin film 10 has good uniformity and consistency, and is integrally formed without an interface; as shown in fig. 4, which is a performance diagram of the conductive thin film 10, it can be seen that the sheet resistance of the conductive thin film 10 is 0.95 Ω, the conductivity is high, the transmittance at the wavelength of 350nm to 750nm is above 85%, and the transparency is good. And in the preparation process, no toxic and harmful chemical waste liquid is generated, and the production process is safe.
(second embodiment)
Referring to fig. 5 and fig. 6(a) -6(d) in combination, the method for preparing the conductive film in this embodiment includes the following steps:
the method comprises the following steps: providing a planar hollow grid-shaped template 201 which is made of nickel, the size of the template is 10cm multiplied by 10cm, the meshes are square, the aperture is 4 mu m, the grid line width is 500nm, and the thickness of the template 201 is 1 mu m. Dissolving glucose and linear alkyl benzene sodium sulfonate in deionized water according to the mass ratio of 2:1 to prepare the formed water-soluble mold release agent. The template 201 is immersed in a water-soluble release agent with the concentration of 10% for 1-5 minutes, and the template is taken out and dried by compressed air, so that a water-soluble release layer 202 is formed on the surface of the template 201.
Step two: a first aluminum film layer 2031 with the thickness of 100nm, a second copper film layer 2032 with the thickness of 300nm and a third aluminum film layer 2033 with the thickness of 100nm are sequentially deposited on the surface of the template 201 on which the water-soluble release layer 202 is formed by a magnetron sputtering method, and the first aluminum film layer 2031, the second copper film layer 2032 and the third aluminum film layer 2033 are superposed to form a conductive grid film 203, so that an initial film 21 is obtained. The first aluminum film 2031, the second copper film 2032, and the third aluminum film 2033 have the same shape, size, hollow aperture, grid line width, and the like as those of the template 201.
Step three: the base layer 205 is coated with an adhesive layer 204, and the surface of the initial film 21 having the copper film 203 is attached to the base layer 205 through the adhesive layer 204 to obtain the transition film 22, wherein the base layer 205 is made of glass and the adhesive layer is made of acrylic ester.
Step four: and immersing the transition film 22 in water for 2-10 minutes to dissolve the water-soluble release layer 202 in the water, and separating the conductive grid film 203 from the template 202 to obtain the conductive film 20.
As shown in fig. 7, which is a partial enlarged view of the conductive film 20, it can be seen that the conductive film 20 has good uniformity and consistency, and is integrally formed without an interface; as shown in fig. 8, which is a performance diagram of the conductive thin film 20, it can be seen that the sheet resistance of the conductive thin film 20 is 0.35 Ω, the conductivity is high, the transmittance at the wavelength of 350nm to 750nm is 65% or more, and the transparency is good. And in the preparation process, no toxic and harmful chemical waste liquid is generated, and the production process is safe.
(example 3)
The preparation method of the conductive film in the embodiment comprises the following steps:
the method comprises the following steps: providing a planar hollow grid template which is made of nickel, wherein the size of the template is 10cm multiplied by 10cm, the meshes are hexagonal, the aperture is 50 mu m, the line width of the meshes is 1 mu m, and the thickness of the template is 2 mu m. Dissolving glucose and linear alkyl benzene sodium sulfonate in deionized water according to the mass ratio of 2:1 to prepare the formed water-soluble mold release agent. And immersing the template in a water-soluble release agent with the concentration of 5% for 1 minute, taking out the template, and drying the template by using compressed air to form a water-soluble release layer on the surface of the template.
Step two: and sequentially depositing a titanium alloy film with the thickness of 1000nm on the surface of the template on which the water-soluble release layer is formed by a magnetron sputtering method to obtain an initial film. The shape and size, the hollow aperture, the grid line width and the like of the titanium alloy film are the same as those of the template.
Step three: the transition film is directly obtained from the initial film, namely the transition film is the initial film and does not need any processing.
Step four: and immersing the transition film in water for 2-10 minutes to dissolve the water-soluble release layer in the water, and separating the titanium alloy film from the template to obtain the conductive film, wherein the conductive film only comprises the titanium alloy film.
The structure diagram and the performance parameters of this embodiment can refer to the previous two embodiments, which are not described herein again.
In summary, according to the water-soluble release agent of the present invention, a dense and uniform conductive layer can be formed on the surface of the conductive material during the coating process, and the newly grown conductive layer is naturally peeled off from the template by dissolving the water-soluble release layer. The transparent conductive film has the following beneficial effects: firstly, the preparation method adopts an environment-friendly physical method, avoids the generation of toxic and harmful chemical waste liquid, and has safe production process; secondly, the uniformity and the consistency of the conductive film are good, the conductive film is integrally formed without an interface, and the conductivity is high; thirdly, the material selection is abundant and the cost is low.
The conductive film has a wide application range, for example, the obtained conductive film is covered on the surface of a substrate, a capacitive touch panel can be obtained after processing, and after the capacitive touch panel is connected with a controller and a software driver, the capacitive touch panel can realize single-point touch and multi-point touch functions, has very good flexibility and achieves the expected target. For another example, the obtained conductive films are respectively covered on two sides of a plastic liquid crystal film, the conductive films on the two sides are used as electrodes to form a planar capacitor with a sandwich structure, and when a certain voltage is applied to the two electrodes, an electric field can be formed between the electrodes, so that the originally atomized liquid crystal film becomes transparent, the function of electro-dimming is realized, and the electro-dimming glass can be applied to electro-dimming glass of buildings or intelligent windows of automobiles.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the inventive concept of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (10)

1. The water-soluble release agent is characterized by being a mixed aqueous solution of a surfactant and saccharides, wherein the content ratio of the surfactant to the saccharides is 1:10-1:1, the total concentration of the surfactant and the saccharides is 1% -20%, and the surfactant is one or a mixture of more of linear alkyl benzene sodium sulfonate, fatty alcohol-polyoxyethylene ether sodium sulfate, fatty alcohol-polyoxyethylene ether ammonium sulfate, sodium lauryl sulfate or lauroyl glutamic acid; the saccharide is one or more of glucose, maltose, sucrose or fructose.
2. The water-soluble release agent according to claim 1, wherein the saccharide is maltose.
3. A preparation method of a conductive film comprises the following steps:
the method comprises the following steps: providing a planar hollowed-out grid-shaped template, and forming a water-soluble release layer on the template by using the water-soluble release agent according to any one of claims 1-2;
step two: forming a conductive grid film on the surface of the template on which the water-soluble release layer is formed by using a film coating method to obtain an initial film;
step three: directly obtaining a transition film from the initial film, or attaching the side of the initial film with the conductive grid film to a substrate layer to obtain the transition film;
step four: and immersing the transition film in water to separate the conductive grid film from the template to obtain the conductive film.
4. The method for preparing a conductive film according to claim 3, wherein the first step comprises immersing the template in the water-soluble release agent at a concentration of 5% to 10% for 1 to 5 minutes, followed by blow-drying with gas.
5. The method for preparing a conductive film according to claim 3, wherein in the second step, the thickness of the conductive mesh film is 50nm to 1 μm.
6. The method for preparing a conductive film according to claim 5, wherein the conductive mesh film is a copper film layer and has a single-layer structure, and the thickness of the copper film layer is 200nm to 500 nm.
7. The method for preparing a conductive film according to claim 5, wherein the conductive mesh film is a multilayer structure and comprises a first aluminum film layer, a second copper film layer and a third aluminum film layer in sequence, the thickness of the first aluminum film layer is 50nm-150nm, the thickness of the second copper film layer is 300nm-500nm, and the thickness of the third aluminum film layer is 50nm-150 nm.
8. The method for preparing a conductive film according to claim 3, wherein the third step further comprises disposing an adhesive layer between the conductive mesh film and the substrate layer, wherein the adhesive layer is made of one of acrylate, silica gel and ultraviolet curing adhesive.
9. The method for preparing a conductive film according to claim 3, wherein the conductive mesh film has a hollow aperture of 1-500 μm and a mesh line width of 50nm-1 μm.
10. An electroconductive film, characterized in that the electroconductive film is prepared by the preparation method according to any one of claims 3 to 9.
CN202010525471.XA 2020-06-10 2020-06-10 Water-soluble release agent, conductive film and preparation method thereof Pending CN111694472A (en)

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CN110709174A (en) * 2017-06-22 2020-01-17 宝洁公司 Film comprising a water-soluble layer and a vapor-deposited organic coating

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CN103351812A (en) * 2013-07-17 2013-10-16 浙江池河科技有限公司 Water-based mold release and preparation method thereof and release paper prepared by utilizing water-based mold release
CN110709174A (en) * 2017-06-22 2020-01-17 宝洁公司 Film comprising a water-soluble layer and a vapor-deposited organic coating
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