CN111664975A - Semiconductor nanowire mechanical sensor and preparation method thereof - Google Patents
Semiconductor nanowire mechanical sensor and preparation method thereof Download PDFInfo
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- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
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- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
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Abstract
The invention relates to a semiconductor nanowire mechanical sensor and a preparation method thereof. The semiconductor nanowire mechanical sensor comprises a first substrate and a conducting layer arranged on the top surface of the first substrate; the first substrate is provided with a first groove which penetrates through the conducting layers, and the conducting layers on two sides of the first groove are mutually insulated by the first groove; the first nanowire is arranged between the side walls of the two sides or the surfaces of the two sides of the first groove and connected with the conducting layer between the two sides of the first groove, so that the conducting layer between the two sides of the first groove is conducted; the surface of the first nanowire is attached with a micro-nano material or a mass block. According to the semiconductor nanowire mechanical sensor provided by the invention, the micro-nano material or the mass block grows on the surface of the bridging nanowire for the second time, so that the sensitivity of the nanowire on the flow speed or the acceleration is increased; compared with the current thin film strain gauge, the nanowire in the semiconductor nanowire mechanical sensor has smaller volume, is easier to integrate and has lower power consumption.
Description
Technical Field
The present invention relates to a semiconductor nanowire sensor for detecting physical quantities such as flow velocity, acceleration, and stress strain, and a method for manufacturing the same.
Background
The semiconductor strain gauge sensor is widely used for detecting stress strain, and the working principle is as follows: the semiconductor strain gauge is deformed by an external force, so that the resistance of the strain gauge is changed, and the deformation quantity is obtained by detecting the resistance change.
In order to achieve miniaturization and high sensitivity of the sensor, the strain gauge needs to be downsized. The semiconductor nanowire is used as a minimum conductive channel and is an ideal choice of the micro-nano sensor; and the nanowire can be deformed by a tiny external force, so that the sensitivity can be improved by adopting the semiconductor nanowire to replace a strain gauge.
However, the fabrication process of semiconductor nanowires is complex, requires steps such as stripping, alignment, assembly, photolithography, and plating, and can damage and contaminate the nanowires. In addition, the contact area between the nanowire and the electrode is very small, so that the contact resistance is large, the electrode material and the nanowire are in physical contact, the adhesion force is not enough, and the nanowire cannot be reliably fixed by the electrode for a long time. Recently reported nanowire bridging techniques can effectively solve these problems (Nano Letters,2019,19, 3448-. However, the nanowire structure is fine, and how to apply an external force to the bridging nanowire, so that a micro-nano sensor with excellent performance is prepared is still a challenge at present.
In summary, it is the innovation of the present invention to explore the structure and the preparation process of the nanowire mechanical sensor.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a semiconductor nanowire mechanical sensor and a preparation method thereof.
The invention relates to a semiconductor nanowire mechanical sensor, which adopts the technical scheme that:
the semiconductor nanowire mechanical sensor comprises a first substrate and a conducting layer arranged on the top surface of the first substrate;
a first groove penetrating through the conducting layers is formed in the first substrate, and the conducting layers on two sides of the first groove are mutually insulated by the first groove;
the side walls of two sides or the surfaces of two sides of the first groove are provided with first nanowires, and the first nanowires are connected with the conducting layers between two sides of the first groove (the first nanowires are called bridging nanowires for short), so that the conducting layers between two sides of the first groove are conducted; the bridging nanowire is in a suspended state;
the depth of the first groove is larger than one tenth of the width of the groove, and the width of the bottom of the groove is larger than the width of the top of the groove (such as an inverted trapezoid or an inverted triangle), so as to avoid the short circuit (i.e. bypass current) of the nanowire caused by the parasitic deposition at the bottom of the groove during the growth of the nanowire.
The invention provides a semiconductor nanowire mechanical sensor, which further comprises the following subsidiary technical scheme:
the first substrate is provided with a first groove penetrating through the conducting layer, and the conducting layers on two sides of the first groove are mutually insulated by the first groove;
second nanowires are arranged on the side walls of the two sides or the surfaces of the two sides of the second groove and connected with the conducting layers between the two sides of the second groove, so that the conducting layers between the two sides of the second groove are conducted; the extending direction of the second nanowire is perpendicular to the extending direction of the first nanowire;
and micro-nano materials or mass blocks are attached to the surfaces of the second nanowires.
The conductive layer may be etched to form conductive strips with a groove between two conductive strips to insulate the two conductive strips from each other. Nanowires which are mutually crossed and connected grow on the side walls of two sides or the surfaces of two sides between the two conductive strips, wherein the crossed ends of the nanowires are not fixed and are easy to deform. The crossing nanowires form a conductive path between two conductive strips, so that the resistance change caused by the crossing nanowires when deformed (e.g., bent) can be obtained by testing the resistance between the two conductive strips.
The first substrate is provided with a first groove, wherein one end of the back of the first substrate is provided with a thinning area, and the thinning area extends to the local area of the first groove.
A thinning region is arranged at one end of the back of the first substrate and penetrates through the first groove;
and a second substrate is arranged below the first substrate, and the second substrate and the first substrate are arranged in a face-to-face and close fit manner.
The first substrate is provided with a third groove penetrating through the conducting layers, and the conducting layers on two sides of the third groove are mutually insulated by the third groove;
a third nanowire is arranged between two side walls of the third groove and connected with the conducting layer between two sides of the third groove, so that the conducting layer between two sides of the third groove is conducted; the extending direction of the third nanowire is vertical to the extending direction of the first nanowire and the extending direction of the second nanowire;
and a micro-nano material or a mass block is attached to the surface of the third nanowire.
The extension direction of the micro-nano material is perpendicular to the extension direction of the first nanowire.
The invention also provides a preparation method of the semiconductor nanowire mechanical sensor, which comprises the following steps:
(1) growing a conductive layer on the top surface of the first substrate;
(2) etching a first groove penetrating through the conducting layers on the first substrate, wherein the conducting layers on two sides of the first groove are mutually insulated by the first groove;
(3) bridging and growing a first nanowire between two side walls of the first groove, wherein the first nanowire is connected with the conducting layer between two sides of the first groove, so that the conducting layer between two sides of the first groove is conducted;
(4) and growing a micro-nano material or a mass block on the surface of the first nanowire for the second time.
Wherein the method further comprises:
(5) etching a second groove penetrating through the conducting layer on the first substrate, wherein the conducting layers on two sides of the second groove are mutually insulated by the second groove;
(6) bridging and growing a second nanowire on the side walls of the two sides or the surfaces of the two sides of the second groove, wherein the second nanowire is connected with the conducting layer between the two sides of the second groove, so that the conducting layer between the two sides of the second groove is conducted; the extending direction of the second nanowire is perpendicular to the extending direction of the first nanowire.
(7) Micro-nano materials or mass blocks are attached to the surfaces of the first nanowires;
wherein the method further comprises:
(8) the first substrate back one end sets up the attenuate region, the attenuate region extends to the local region of first recess.
Wherein the method further comprises:
(9) a thinning region is arranged at one end of the back of the first substrate and penetrates through the first groove;
(10) and a second substrate is arranged below the first substrate, and the second substrate and the first substrate are closely arranged in a face-to-face mode.
The nanowire sensor and the preparation method thereof provided by the invention have the following technical effects:
compared with the existing thin film strain gauge, the nanowire in the semiconductor nanowire mechanical sensor provided by the invention has the advantages of smaller volume, easier integration and lower power consumption;
the micro-nano material or the mass block is secondarily grown or attached to the surface of the bridging nanowire, so that the volume and the mass of the nanowire are increased, and the sensitivity of the nanowire on the flow speed and the acceleration is increased;
three-dimensional vector detection of mechanical quantity is realized by combining the arrangement directions of the bridging nanowires, and device integration can be realized;
through local thinning or stripping of the substrate, the strength of the supporting substrate and the constraint on the nanowire are reduced, so that the deformation amount of the nanowire is increased, and the detection range and sensitivity are increased.
Drawings
Fig. 1 is a schematic diagram of a micro-nano material grown on the surface of a nanowire bridging the sidewalls of two sides of a groove.
Fig. 2 is a schematic diagram of the attachment of a mass to the surface of the nanowire bridging the sidewalls of the groove on both sides.
FIG. 3 is a schematic diagram of a combination of bridged nanowires with different alignment directions.
Fig. 4 a schematic cross-sectional view of thinning of a bridging nanowire support substrate.
Fig. 5 a schematic top view of thinning of a bridging nanowire support substrate.
Fig. 6 is a top view of a bridging nanowire with two conductive strips on the same side wall.
Fig. 7 is a cross-sectional view of a bridged nanowire with two conductive strips on the same side wall.
Fig. 8 is a top view of a conductive stripe sidewall bridging nanowire with an included angle.
Figure 9 top view schematic of bridging nanowires on both side surfaces of the groove.
FIG. 10 is a cross-sectional view of a bridged nanowire representation of the surfaces on both sides of the groove.
Detailed Description
The present invention will be described in detail with reference to examples.
As shown in fig. 1 to 5, the semiconductor nanowire mechanical sensor provided in the present embodiment includes a first substrate 1, and a conductive layer 3 disposed on a top surface of the first substrate 1;
a first groove 2 penetrating through the conductive layer 3 is formed in the first substrate 1, and the conductive layers 3 on two sides of the first groove 2 are mutually insulated by the first groove 2;
the side walls of two sides or the surfaces of two sides of the first groove 2 are provided with first nanowires 4, and the first nanowires 4 are connected with the conducting layers 3 between two sides of the first groove 2, so that the conducting layers 3 between two sides of the first groove 2 are conducted;
the first nanowire 4 is not limited to a single nanowire, but may be a multi-nanowire.
The extension direction of the micro-nano material is perpendicular to the extension direction of the first nanowire. The micro-nano material can increase the load mass of the suspended nanowire, and the stress of the suspended nanowire is in direct proportion to the product of acceleration and the load mass, so that the detection sensitivity of acceleration or inertia force can be improved.
The mass block can be a block formed by glue, or the block is adhered to the surface of the suspended nanowire by using the glue.
The nanometer material and the mass block are attached to the surface of the suspended nanowire so as to increase the volume and the surface area of the suspended nanowire, thereby increasing the resistance of fluid passing through the nanowire and improving the detection sensitivity of the flow velocity.
According to the semiconductor nanowire mechanical sensor provided by the invention, the micro-nano material or the mass block is grown or attached on the surface of the bridging nanowire for the second time, so that the sensitivity of the nanowire on the flow speed or the acceleration is increased; compared with the existing thin film strain gauge, the nanowire in the semiconductor nanowire mechanical sensor provided by the invention has the advantages of smaller volume, easier integration and lower power consumption.
Optionally, a second groove 8 penetrating through the conductive layer is disposed on the first substrate 1, and the conductive layers 3 on two sides of the second groove 8 are insulated from each other by the second groove 8;
a second nanowire 9 is arranged between two side walls of the second groove 8, and the second nanowire 9 is connected with the conductive layer 3 between two sides of the second groove 8, so that the conductive layer 3 between two sides of the second groove 8 is conducted; the extension direction of the second nanowire 9 is perpendicular to the extension direction of the first nanowire 4.
The micro-nano material 5 or the mass block 6 is attached to the surface of the second nanowire 9.
In this embodiment, three-dimensional vector detection of mechanical quantity is realized by combining the arrangement directions of the bridging nanowires.
Optionally, a third groove penetrating through the conductive layer is formed in the first substrate, and the conductive layers on two sides of the third groove are insulated from each other by the third groove;
a third nanowire is arranged between two side walls of the third groove and connected with the conducting layer between two sides of the third groove, so that the conducting layer between two sides of the third groove is conducted; the extending direction of the third nanowire is vertical to the extending direction of the first nanowire and the extending direction of the second nanowire.
And a micro-nano material or a mass block is attached to the surface of the third nanowire.
In the embodiment, as the nanowires in the same direction form one sensor, the suspended nanowires in different directions can form different sensors, and the different sensors have different sensitivity degrees to external force (such as inertia force) in the same direction; therefore, by comparing the detection signals of the different sensors, the direction of the external force can be identified.
Optionally, a thinning region 7 is disposed at one end of the back surface of the first substrate 1, and the thinning region 7 extends to a local region of the first groove 2.
In this embodiment, the back surface of the supporting substrate (the first substrate in this embodiment) is locally thinned, so that the thickness of the substrate in the thinned region is reduced, for example, less than 100 micrometers, and the strength of the supporting substrate is reduced, thereby reducing the binding effect of the supporting substrate on the suspended nanowires, and increasing the detection range and sensitivity. The thinning region at least comprises an electrode region on one side of the suspended nanowire.
Optionally, a thinned region 7 is arranged at one end of the back surface of the first substrate 1, and the thinned region 7 penetrates through the first groove;
a second substrate is arranged below the first substrate 1, and the second substrate and the first substrate are arranged in a face-to-face and close contact mode.
In this embodiment, paste first substrate and second substrate face-to-face, then from the back attenuate support substrate for the recess bottom of support substrate pierces through, and support substrate thickness after the attenuate is less than the recess degree of depth promptly, thereby support substrate loses the constraint effect to unsettled nano wire, and the deformation of nano wire is decided by another substrate completely this moment. The other substrate may be a flexible substrate, which may increase the detection range and sensitivity of the sensor.
The invention also provides a preparation method of the semiconductor nanowire mechanical sensor, which comprises the following steps:
(1) growing a conductive layer on the top surface of the first substrate;
(2) etching a first groove penetrating through the conducting layers on the first substrate, wherein the conducting layers on two sides of the first groove are mutually insulated by the first groove;
(3) bridging and growing a first nanowire on the side walls of the two sides or the surfaces of the two sides of the first groove, wherein the first nanowire is connected with the conducting layer between the two sides of the first groove, so that the conducting layer between the two sides of the first groove is conducted;
(4) and growing a micro-nano material or a mass block on the surface of the first nanowire for the second time.
It should be noted that the bridging nanowire is in a suspended state, which may be referred to as a "suspended nanowire", and two ends of the nanowire are bonded to the sidewalls of the groove of the supporting substrate. The secondary growth is to grow micro-nano materials, namely micron-sized or nano-sized materials with shapes of lines, sheets or particles and the like on the surface of the suspended nanowire by utilizing processes such as chemical vapor deposition (such as CVD), physical vapor deposition (such as MBE), hydrothermal synthesis, electrochemical growth and the like.
Optionally, the method further comprises:
(8) the first substrate back one end sets up the attenuate region, the attenuate region extends to the local region of first recess.
Optionally, the method further comprises:
(9) a thinning region is arranged at one end of the back of the first substrate and penetrates through the first groove;
(10) and a second substrate is arranged below the first substrate, and the second substrate and the first substrate are closely arranged in a face-to-face mode.
The method for manufacturing the semiconductor nanowire mechanical sensor according to the present invention will be described in detail with reference to specific examples.
Example 1
As shown in fig. 1: firstly, an n-type GaN conducting layer 3 with the thickness of 1-10 microns is grown on the surface of a sapphire substrate 1 by utilizing a physical vapor deposition (MBE) technology, and then a first groove 2 is etched on the substrate. Wherein the first groove 2 penetrates the conductive layer 3, so that the conductive layers 3 at both sides of the first groove 2 are electrically insulated from each other.
Next, a GaN first nanowire 4 is grown bridging the groove sidewalls. The first nanowire 4 is in a suspended state and serves as a conductive channel of the conductive layers 3 at two sides and is connected with the conductive layers 3 at two sides of the first groove 2.
And then, plating a NiAu film on the surface of the suspended first nanowire 4 to be used as a catalyst, and then growing the GaN micro-nano material 5 for the second time. The micro-nano material 5 increases the volume and the surface area of the first nanowire 4, thereby increasing the resistance of the nanowire to the fluid.
When external air flow or liquid flow flows through the first groove 2, acting force is generated on the first nanowire 4 and the micro-nano material 5, so that the first nanowire 4 and the micro-nano material 5 are deformed, and the resistance of the first nanowire 4 is changed. Therefore, by detecting the change in the resistance of the first nanowire 4, the flow rate of the fluid can be known.
Example 2
As shown in fig. 2: firstly, an n-type silicon conducting layer 3 with the thickness of 1-10 microns is grown on the surface of a glass substrate 1 by utilizing a Chemical Vapor Deposition (CVD) technology, and then a first groove 2 is etched on the substrate. Wherein the first groove 2 penetrates the conductive layer 3, so that the conductive layers 3 at both sides of the first groove 2 are electrically insulated from each other.
Next, a silicon first nanowire 4 is grown bridging the trench sidewalls. The first nanowire 4 is in a suspended state and serves as a conductive channel of the conductive layers 3 at two sides and is connected with the conductive layers 3 at two sides of the first groove 2.
And then, glue is dripped on the surface of the suspended first nanowire 4 to form a mass block 6. The mass 6 increases the volume and mass of the first nanowire 4.
When an external acceleration acts on the first nanowire 4, the mass 6 generates an inertial force. The inertial force deforms the first nanowire 4, thereby changing the resistance of the first nanowire 4. Therefore, by detecting the change in the resistance of the first nanowire 4, the external acceleration can be known.
Example 3
As shown in fig. 3: first, a 7 μm thick p-type AlGaN conductive layer 3 is grown on the surface of a sapphire substrate 1, and then a first groove 2 and a second groove 8 are etched on the substrate. The first groove 2 and the second groove 8 are perpendicular to each other, and the first groove 2 and the second groove 8 penetrate through the conductive layer 3, so that the conductive layers 3 on two sides of the first groove 2 and the second groove 8 are mutually insulated electrically.
Secondly, the GaN first nanowire 4 and the GaN second nanowire 9 are respectively grown on the side walls of the first groove 2 and the second groove 8 in a bridging mode. The first nanowire 4 and the second nanowire 9 are in a suspended state and are used as conductive channels of the conductive layers 3 on two sides to connect the conductive layers 3 on two sides of the first groove 2 and the second groove 8. Since the two grooves are perpendicular to each other, the bridging first nanowire 4 and the second nanowire 9 grown on the two grooves have their alignment directions also perpendicular to each other.
And then, glue is dripped on the surfaces of the suspended first nanowire 4 and the suspended second nanowire 9 to form a mass block 6. The mass 6 increases the volume and mass of the first nanowire 4 and the second nanowire 9.
When external acceleration acts on the first nanowire 4 and the second nanowire 9, the mass 6 generates an inertial force. The inertial force deforms the first nanowire 4 and the second nanowire 9, thereby changing the resistance of the first nanowire 4 and the second nanowire 9. When the direction of the inertial force is perpendicular to one of the nanowires, the direction of the inertial force is parallel to the other nanowire. The amount of resistance change produced by the nanowire perpendicular to the inertial force is greater than the amount of resistance change produced by the nanowire parallel to the inertial force. Therefore, by comparing the magnitudes of the resistance changes of the two nanowires, the direction of the inertial force can be known.
The number of the grooves in fig. 3 may be more than 2, and the number of the floating first nanowires 4 may also be more than 2. The more the nanowires are aligned, the higher the accuracy of identifying the direction of the inertial force.
Example 4
As shown in fig. 4-5: first, an n-type ZnO conductive layer 3 having a thickness of 10 μm is grown on the surface of a glass substrate 1 using a Chemical Vapor Deposition (CVD) technique, and then a first groove 2 is etched on the substrate. Wherein the first groove 2 penetrates the conductive layer 3, so that the conductive layers 3 at both sides of the first groove 2 are electrically insulated from each other. Next, the glass substrate is thinned in a local region 7 of the back surface of the glass substrate, thereby thinning the substrate thickness in this region.
Then, the first nanowire 4 of ZnO is grown on the side wall of the groove in a bridging mode. The first nanowire 4 is in a suspended state and serves as a conductive channel of the conductive layers 3 at two sides and is connected with the conductive layers 3 at two sides of the first groove 2.
And finally, dripping glue 6 on the surface of the suspended first nanowire 4 to serve as a mass block. The mass 6 increases the volume and mass of the first nanowire 4.
When an external acceleration acts on the first nanowire 4, the mass 6 generates an inertial force. The inertial force deforms the first nanowire 4, thereby changing the resistance of the first nanowire 4. Therefore, by detecting the change in the resistance of the first nanowire 4, the external acceleration can be known.
Since the bridging nanowire is fixed to the side wall of the groove, the local thinned region 7 contains the region on one side of the groove, and therefore the amount of substrate deformation in this thinned region.
Example 5
As shown in fig. 6-7 (fig. 6 is a top view, fig. 7 is a cross-sectional view): firstly, growing an n-type GaN conducting layer 3 with the thickness of 10 microns on the surface of a sapphire substrate 1 by utilizing a Chemical Vapor Deposition (CVD) technology, and then etching the substrate to form a conducting strip 3; etching a first groove 2 in the conductive strip 3 so that the conductive strip 3 is divided into two parts insulated from each other, namely a conductive strip 3.1 and a conductive strip 3.2, wherein the first groove 2 penetrates through the conductive layer 3; then, a GaN nanowire 4 is grown on the sidewalls of both the conductive strip 3.1 and the conductive strip 3.2, the nanowire is in a suspended state, and the nanowires grown on the sidewalls of the two conductive strips 3.1 and 3.2 are cross-connected to each other to form a cross point 10 and serve as a conductive path between the conductive layer 3.1 and the conductive strip 3.2.
Because one end of the nanowire 4 is fixed, namely connected with the side wall of the conductive strip 3, and the other end is not fixed, the nanowire with one free end is easier to bend and deform, and the detection sensitivity to external force is higher.
Finally, glue 6 can be optionally dropped on the surface of the nanowire 4 or at the intersection point 10 as a mass. The mass 6 increases the volume and mass of the first nanowire 4.
When an external force acts on the nanowire 4, the nanowire 4 is deformed, thereby changing the resistance of the nanowire 4. Thus, by detecting the change in resistance between the conductive strip 3.1 and the conductive strip 3.2 (i.e. the change in resistance of the crossing nanowire 4), the magnitude of the external force can be known.
Example 6
As shown in fig. 8 (fig. 8 is a top view): firstly, growing an n-type GaN conducting layer 3 with the thickness of 6 microns on the surface of a sapphire substrate 1 by utilizing a Chemical Vapor Deposition (CVD) technology, and then etching the substrate to form a bent conducting strip 3; etching the conductive strip 3 to form a first groove 2, so that the conductive strip 3 is divided into two parts, namely a conductive strip 3.1 and a conductive strip 3.2, which are insulated from each other, wherein an included angle between the conductive strip 3.1 and the conductive strip 3.2 is less than 180 degrees, wherein the first groove 2 penetrates through the conductive layer 3; then, a GaN nanowire 4 is grown on the sidewalls of both the conductive strip 3.1 and the conductive strip 3.2, the nanowire is in a suspended state, and the nanowires grown on the sidewalls of both the conductive strips 3.1 and 3.2 are cross-connected to each other to form a cross point 10 as a conductive path between the conductive layer 3.1 and the conductive strip 3.2.
Because there is an angle between the two conductive strips 3.1 and 3.2, (the angle is preferably 90 degrees, the nanowire 4 grown on the sidewalls of the two conductive strips is easier to cross-connect, and moreover, one end of the nanowire 4 is in a free state (not fixed), the nanowire is easier to bend and deform, and the detection sensitivity to external force is higher.
Finally, glue 6 can be optionally dropped on the surface of the nanowire 4 or at the intersection point 10 as a mass. The mass 6 increases the volume and mass of the first nanowire 4.
When an external force acts on the nanowire 4, the nanowire 4 is deformed, thereby changing the resistance of the nanowire 4. Thus, by detecting the change in resistance between the conductive strip 3.1 and the conductive strip 3.2 (i.e. the change in resistance of the crossing nanowire 4), the magnitude of the external force can be known.
Example 7
As shown in fig. 9 and 10: first, a 1 μm thick GaN conductive layer 3 is grown on the surface of a quartz substrate 1 by a Chemical Vapor Deposition (CVD) technique, and then a groove 2 is etched on the substrate, the groove 2 penetrating the conductive layer 3 and penetrating into the quartz substrate, thereby insulating the conductive layers on both sides of the groove from each other. As shown in fig. 10, since the etching rate of quartz can be greater than that of GaN when etching quartz, the width d1 of the top GaN layer 3 in the groove is smaller than the width d2 of the bottom quartz, d1< d 2; when a gaseous source is introduced to grow the nanowire, an airflow dead zone is formed between the suspended conducting layer and the quartz side wall, so that a shielding effect is generated on the gaseous source (the gaseous source can generate parasitic sediments 11), the parasitic sediments 11 cannot cover the whole groove side wall, the parasitic sediments 11 cannot be communicated with the conducting layers 3 on two sides of the groove, and the bypass current bridging the nanowire 4 is eliminated.
Secondly, growing GaN nanowires 4 on the surfaces of the conducting layers 3 on the two sides of the groove, wherein the nanowires are in a suspended state, and the nanowires 4 on the surfaces on the two sides are mutually crossed and connected to form a cross point 10) and are used as a conducting channel between the conducting layers 3 on the two sides of the groove. Since the crossover point 10 is located above (away from the surface) the conductive layer 3, being in a free state (not fixed), the nanowire is more easily bent and deformed, and the detection sensitivity to external forces is higher.
Finally, glue 6 can be dripped on the surface or the cross point 10 of the nanowire 4 or the micro-nano material 5 can be grown to be used as a mass block, so that the volume and the mass of the nanowire 4 are increased.
When an external force acts on the nanowire 4, the nanowire 4 is deformed, thereby changing the resistance of the nanowire 4. Therefore, by detecting the resistance change between the conductive layers on both sides of the groove (i.e., the resistance change of the crossing nanowire 4), the magnitude of the external force can be known.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the protection scope of the present invention, although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (10)
1. A semiconductor nanowire mechanical sensor, characterized by: the semiconductor nanowire mechanical sensor comprises a first substrate and a conducting layer arranged on the top surface of the first substrate;
a first groove penetrating through the conducting layers is formed in the first substrate, and the conducting layers on two sides of the first groove are mutually insulated by the first groove;
a first nanowire is arranged between the side walls of the two sides or the surfaces of the two sides of the first groove, and the first nanowire is connected with the conducting layers between the two sides of the first groove, so that the conducting layers between the two sides of the first groove are conducted;
the surface of the first nanowire is attached with a micro-nano material or a mass block.
2. The semiconductor nanowire mechanical sensor of claim 1, wherein the first substrate is provided with a second groove penetrating through the conductive layer, and the second groove enables the conductive layers on two sides of the second groove to be insulated from each other;
a second nanowire is arranged between two side walls of the second groove and connected with the conducting layers between two sides of the second groove, so that the conducting layers between two sides of the second groove are conducted; the extending direction of the second nanowire is perpendicular to the extending direction of the first nanowire;
and micro-nano materials or mass blocks are attached to the surfaces of the second nanowires.
3. The semiconductor nanowire mechanical sensor of claim 1, wherein a thinned region is disposed at one end of the back surface of the first substrate, the thinned region extending to a local region of the first groove.
4. The semiconductor nanowire mechanical sensor according to claim 1, wherein a thinned region is disposed at one end of the back surface of the first substrate, and the thinned region penetrates through the first groove;
and a second substrate is arranged below the first substrate, and the second substrate and the first substrate are arranged in a face-to-face and close fit manner.
5. The semiconductor nanowire mechanical sensor of claim 2, wherein a third groove is formed in the first substrate and penetrates through the conductive layer, and the third groove enables the conductive layers on two sides of the third groove to be insulated from each other;
a third nanowire is arranged between two side walls of the third groove and connected with the conducting layer between two sides of the third groove, so that the conducting layer between two sides of the third groove is conducted; the extending direction of the third nanowire is vertical to the extending direction of the first nanowire and the extending direction of the second nanowire;
and a micro-nano material or a mass block is attached to the surface of the third nanowire.
6. The semiconductor nanowire mechanical sensor of any one of claims 1-5, wherein the first groove has a bottom width greater than a top width and a groove depth greater than one tenth of the groove width.
7. A method for preparing a semiconductor nanowire mechanical sensor, the method comprising:
(1) growing a conductive layer on the top surface of the first substrate;
(2) etching a first groove penetrating through the conducting layers on the first substrate, wherein the conducting layers on two sides of the first groove are mutually insulated by the first groove;
(3) bridging and growing a first nanowire on the side walls of the two sides or the surfaces of the two sides of the first groove, wherein the first nanowire is connected with the conducting layer between the two sides of the first groove, so that the conducting layer between the two sides of the first groove is conducted;
(4) and growing a micro-nano material or a mass block on the surface of the first nanowire for the second time.
8. The method of manufacturing according to claim 7, further comprising:
(5) etching a second groove penetrating through the conducting layer on the first substrate, wherein the conducting layers on two sides of the second groove are mutually insulated by the second groove;
(6) bridging and growing a second nanowire between two side walls of the second groove, wherein the second nanowire is connected with the conducting layer between two sides of the second groove, so that the conducting layer between two sides of the second groove is conducted; the extension direction of the second nanowire is perpendicular to the extension direction of the first nanowire,
(7) and a micro-nano material or a mass block is attached to the surface of the second nanowire.
9. The method of manufacturing according to claim 7, further comprising:
(8) the first substrate back one end sets up the attenuate region, the attenuate region extends to the local region of first recess.
10. The method of manufacturing according to claim 7, further comprising:
(9) a thinning region is arranged at one end of the back of the first substrate and penetrates through the first groove;
(10) and a second substrate is arranged below the first substrate, and the second substrate and the first substrate are closely arranged in a face-to-face mode.
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