CN1865124A - Inertial sensor body with micro-nano structure and manufacturing method thereof - Google Patents
Inertial sensor body with micro-nano structure and manufacturing method thereof Download PDFInfo
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Abstract
The invention relates to an inertial sensor body with a micro-nano structure, which comprises: a silicon substrate and an insulating layer disposed thereon, 2 strip electrodes disposed on both sides of an upper portion of the insulating layer; 2 groups of resonance beams made of one-dimensional nano materials are respectively lapped between the mass block and the first electrode and between the mass block and the second electrode, or one group of resonance beams is lapped on the second electrode from the first electrode through the mass block and is fixed at the contact surface of the resonance beams with the electrode and the mass block; the mass block is positioned in the center of the upper part of the insulating layer and suspended under the support of the resonant beam; the whole substrate is used as a driving electrode, and an insulating layer on the silicon substrate is provided with a window to form a pressure welding disc which is used as a leading-out joint of the bottom electrode; the first electrode and the second electrode are respectively provided with leads connected with the bonding pad; meanwhile, the one-dimensional nano material is also used as an electric lead for realizing the electric connection of the mass block, the electrode and the electrode. The preparation method comprises the steps of taking a silicon wafer as a substrate material, carrying out micro-processing on the surface of the silicon wafer and carrying out directional assembly on a one-dimensional nano material.
Description
Technical field
The present invention relates to receive Mechatronic Systems (NEMS) and field of sensing technologies, particularly a kind of realize high-sensitivity measurement, based on inertia sensor of micro-nano structure and preparation method thereof.
Background technology
Inertial sensor based on MEMS (MEMS) comprises gyroscope and micro-acceleration gauge, has wide practical use in fields such as industrial automation, automobile, household electrical appliances, building, Aero-Space and national defence.Common mini inertial sensor generally has the structure that little beam supports mass, and its material also all is little processing material---silicon or metal commonly used basically, and the face size of its mass is generally hundred microns to millimeter, and the beam section size is also in micron dimension.That resonant transducer has is highly sensitive, be convenient to advantage such as numeral output, is considered to a kind of very promising sensing mode.The operation principle of resonance type micro accelerometer is: spring beam---mass block structure vibrates at resonance point in driving, has acceleration to do the time spent, and its resonant frequency will change, thereby reaches the purpose of measuring acceleration by the measurement of resonant frequency.Spring beam---mass block structure is the amplitude maximum when resonance, adopts to comprise that methods such as pressure resistance type, condenser type or optical measurement can record its amplitude and feed back to drive circuit, make spring beam-mass block structure vibrate at resonance point all the time.Do the time spent as acceleration, the resonant frequency of spring beam-mass block structure can change, by detecting the size (list of references [1]: B.L.Lee that change of resonance frequency can sense acceleration, C.H.Oh, Y.S.Oh, K.Chun, A novel resonant accelerometer variable electrostaticstiffness type, Proc.Transducers 99 (1999) 1546-1549.).
Along with the progress of nano materials researches such as CNT, the research that utilizes the characteristics such as power, electricity, heat, light, magnetic of the uniqueness that nano material shows to carry out Performances of Novel Nano-Porous pickoff spare becomes a focus of nanometer technology and NEMS research gradually.Utilize material and new effect, the new property of structure in physics, chemistry and biology under the nanoscale, sensor performance is with leaping property raising (list of references [2]: Wu Yingfei, Zhou Zhaoying, Feng Yanying, Zhang Ganghua. nanometer technology and prospect thereof. the science and technology circular, 2003,19 (1): 42-47).Wherein, monodimension nanometer material obtains the attention of height in sensor research, especially CNT, have in light weight, intensity is high, elastic modelling quantity is high, good springiness, and has nanometer grade diameter micron order length simultaneously, draw ratio can reach characteristics (lists of references [3]: Dong Shurong such as 100-1000, Zhang Xiaobin, Tu Jiangping, Wang Chun sheng, Liu Maosen.A NewType NanometreMaterial-Carbon Nanotube.Materials Science ﹠amp; Engineering.Vol.16 1998:19-24), is expected to be used for the NEMS device, replaces the trace in the MEMS device, achieves higher performance.Micro-mechanical inertia sensor commonly used adopts the little technology of silicon, not only etches the sensitive blocks of accelerometer on silicon chip, also etches needed flexible support.And can't realize minimum diameter that monodimension nanometer material has and high draw ratio based on the flexible support of MEMS technology processing.Therefore monodimension nanometer material and assembling microstructures can be realized the high-sensitivity measurement under the very small dimensions, utilize the multinomial high-quality physical property of monodimension nanometer material self also can make the mode variation of signals collecting.
Summary of the invention
The object of the present invention is to provide a kind of utilize that monodimension nanometer material combines with micro-structural, have in light weight, intensity is high, elastic modelling quantity is also high, can realize more highly sensitive inertial acceleration measured sensor body; And provide a kind of method of making inertial acceleration measured sensor body.
The inertia sensor of micro-nano structure provided by the invention comprises: a silicon base 1 and the insulating barrier 2 that is provided with thereon, the electrode of fixing on insulating barrier 2 tops, electrode top is fixed with resonance beam 5, contact conductor, an and mass 6, it is characterized in that, described electrode is 2 band shapes, is separately positioned on the both sides on insulating barrier 2 tops of silicon base; Described resonance beam 5 is 2 groups of monodimension nanometer materials, these 2 groups of resonance beam are taken respectively and are placed between mass 6 and first electrode 3 and the mass 6 and second electrode 4, perhaps described resonance beam 5 is one group, this one group of resonance beam 5 is taken on second electrode 4 from first electrode 3 through mass 6, and resonance beam 5 is being fixed with the contact-making surface place of electrode and mass; Described mass 6 is positioned at the center on insulating barrier 2 tops, and mass is unsettled under the support of resonance beam, and the gap (air gap) between insulating barrier 2 and the mass 6 is 0.3 μ m-4 μ m; Whole silicon base 1 is as drive electrode (hearth electrode), and the insulating barrier 2 on the silicon base 1 has a window shape and becomes bond pad 9, as the joint of drawing of hearth electrode; First electrode 3 and second electrode 4 leaded 7 link to each other with bond pad 8 respectively; Simultaneously, monodimension nanometer material is also realized the electrical lead that is electrically connected as mass 6 and electrode 3 and electrode 4.
In above-mentioned technical scheme, described monodimension nanometer material comprises: carbon nano-fiber, nanometer carbon ribbon or CNT; Metal nanometer line such as platinum, silver; With materials such as semiconductor nanowires such as GaP, InP, described resonance beam is 2 groups, and each group adopts several, different size according to mass, adopt less carbon pipe, can support under the unsettled prerequisite of mass, be beneficial to reduce the rigidity of mass and cantilever beam institute construction system.
In above-mentioned technical scheme, described substrate 1 is selected from silicon chip.
In above-mentioned technical scheme, the size of described spring beam 5 is generally: length is between 2 μ m～30 μ m, and diameter is 1 nanometer to 100 nanometer.
In above-mentioned technical scheme, described insulating barrier is selected from silica and silicon nitride etc., and its silica and silicon nitride gross thickness are 1600 to 2500 .
In above-mentioned technical scheme, described electrode be polysilicon or polysilicon and on metal level, metal level comprises one deck titanium and one deck gold, titanium/gold metal layer thickness is between 0.3 μ m～4 μ m.
In above-mentioned technical scheme, described mass 6 be polycrystalline silicon material or polysilicon and on titanium/gold metal layer, the gap between the mass 6 and first electrode 3 and second electrode 4 is between 0.5 μ m～10 μ m.
The preparation method of the inertia sensor of making micro-nano structure provided by the invention, this method comprise with the silicon chip being base material, and to the little processing of silicon chip surface with carry out the orientation assembling of monodimension nanometer material, wherein step is as follows:
1) adopts conventional semiconductor technology to carry out phosphorus heavy doping to silicon base, form doped layer as drive electrode (hearth electrode);
2) deposit one layer insulating on the silicon chip that step 1) obtains, simultaneously also as the layer that stops of sacrifice layer corrosion, its thickness of insulating layer is 1600 to 2500 ;
3) then in step 2) deposit one deck sacrifice layer on the silicon chip that obtains, its sacrificial layer thickness is 0.3 μ m-4 μ m;
4) the electrode figure by design removes the part in described insulating barrier and the sacrifice layer, so that expose described base electrode: be deposited with insulating barrier and sacrifice layer silicon chip to what step 3) obtained, adopt conventional semiconductor technology to carry out graphical etching and expose the required press welding block of described hearth electrode;
5) deposit one polysilicon layer on the silicon chip that graphically obtains through step 4) again, its thickness is 0.3 μ m-4 μ m, and adopts conventional semiconductor technology that described polysilicon layer is carried out heavy doping phosphorus, makes described polysilicon layer to conduct electricity;
6) above-mentioned silicon chip is carried out surface chemical modification and handle, the functional group that the polysilicon surface of the silica that is covered with autoxidation or artificial growth can be combined with monodimension nanometer material such as CNT;
Wherein surface chemical modification is handled and to be comprised: with Piranha reagent (concentrated sulfuric acid and 30% H2O2 mix by 7: 3 volume ratio) cleaning silicon chip, then silicon chip is immersed in the hexane solution of 2mMKH-550 after 3 to 4 hours, clean with chloroform, take out the back and under 120 ℃, bake and bank up with earth;
7) simultaneously, monodimension nanometer material is carried out surface chemical modification handle, it can be combined with silicon base, for example on CNT, connect carboxylic group;
8) utilize methods such as common fluid flows, electric field driven, chemical deposition, the oriented alignment assembling is as the monodimension nanometer material of resonance beam on silicon base;
9) then described monodimension nanometer material is fixed on described electrode and the mass: be furnished with the graphical metal level of deposit on the silicon chip of monodimension nanometer material, wherein metal level comprises titanium/gold, its thickness at 400 to 1200 , and utilize this metal level to do the described polysilicon layer of mask etching, make described polysilicon layer morphoplasm gauge block and first and second electrodes and lead-in wire thereof;
10) sacrifice layer corrosion of described mass below is removed, made that described mass is unsettled.
In above-mentioned technical scheme, described step 2) insulating barrier of deposit in, comprise the silicon dioxide layer that adopts the thermal oxidation method growth and on silicon dioxide layer with the silicon nitride layer of Low Pressure Chemical Vapor Deposition deposit.
In above-mentioned technical scheme, the sacrificial layer material in the described step 3) is a phosphorosilicate glass.
In above-mentioned technical scheme, in the described step 5), described polysilicon is carried out heavy doping phosphorus comprises: deposit one deck phosphorosilicate glass on described polysilicon layer, its thickness be 0.05 μ m to 1 μ m, and carry out annealing operation, remove residual phosphorosilicate glass at last.
In the present invention, inertial sensor by measure that spring beam 5 and mass 6 constitute quality---the change of resonance frequency amount of spring system is measured the size of acceleration, give between mass 6 and the substrate 1 by electrode 3 or electrode 4 to apply the alternation exciting voltage signal that a static is setovered and made its resonance.Under the effect of this alternation exciting voltage signal, quality---spring system generation resonance.When acceleration acted on mass 6, the resonant frequency frequency of quality---spring system changed, and utilized the piezoresistive effect of CNT, semiconductor nanowires or utilized optical means to detect, and measured change of resonance frequency.
The invention has the beneficial effects as follows: the monodimension nanometer material that the inertial sensor structure that combines with micro-structural based on monodimension nanometer material is utilized has minimum diameter and high draw ratio, utilize MEMS processing to realize, utilize the minimum footpath and the high length-diameter ratio characteristic of monodimension nanometer material, can realize that the sensitivity under the very small dimensions detects; CNT, semiconductor nanowires have good piezoresistive effect, utilize this piezoresistive effect to measure and can also further improve sensitivity; Owing to utilize nano material to combine, but the small device of implementation structure size with little processing; Utilize the fluid of MEMS technology combining nano material to arrange, realize the micro-nano device that monodimension nanometer material combines with micro-structural.This kind sensor can also expand to the sensor that other physics, biochemical quantity detect, as, the measured quality that makes mass changes or makes the suffered stress changes of elastic supporting beams, thus the sensor that the resonant frequency of system is changed.Preparation method technology of the present invention is simple, and primary structure is by obtaining with photoetching, thereby has guaranteed the making precision.
Description of drawings
Fig. 1 is the schematic diagram of the inertial sensor structure that combines with micro-structural based on monodimension nanometer material of the present invention;
Fig. 2 is a structure vertical view behind the etching polysilicon in preparation method of the present invention;
Fig. 3 is according to technological process diagram process chart along the A-A line drawing in Fig. 3.
The drawing explanation:
1-substrate 2-insulating barrier 3-first electrode
The 4-second electrode 5-resonance beam 6-mass
7-lead-in wire 8,9-bond pad 10-etch pit
11-silicon dioxide layer 12-silicon nitride layer 13-PSG sacrifice layer
14-hearth electrode fairlead 15-polysilicon 16-titanium/gold metal layer
The specific embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Embodiment 1, presses Fig. 1 and shown in Figure 3, makes an inertial sensor and comprises at the bottom of the silicon wafer-based 1, and substrate 1 has been carried out heavy doping phosphorus as drive electrode (hearth electrode).At the bottom of the silicon wafer-based on 1 deposit one layer thickness be the silica 11 of 400 , form insulating barrier 2 with the silicon nitride 12 of 1500 , both sides on insulating barrier 2 are provided with first strip electrode 3 and second electrode 4 of long 100 μ m * high 2 μ m (its width according to domain in graphical distribution coordinate) respectively, and this electrode is a polysilicon.One group of 5 resonance beam 5 be overlapped on first electrode 3 and and mass 6 between, 5 resonance beam 5 of another group are overlapped between second electrode 4 and the mass 6, simultaneously, the electrical lead that CNT also is electrically connected as mass 6 and electrode 3 and electrode 4 realizations.Mass 6 is a polycrystalline silicon material, and this mass 6 is 20 μ m * 40 μ m, and described mass 6 is positioned at the center on insulating barrier 2 tops, and mass is unsettled under the support of resonance beam, and the gap (air gap) between insulating barrier 2 and the mass 6 is 2 μ m; And mass 6 is fixed on the centre of first electrode 3 and second electrode 4 by the spring beam 5 of 2 groups of CNTs, and its mass 6 and gaps between electrodes are at 2 μ m.Each group spring beam is 5 CNTs, and this length of carbon nanotube is at 5 μ m, and diameter is about 1 nanometer (diameter that can not guarantee all carbon pipes is identical, can only be on the average meaning).Sacrifice layer below the corrosion mass can form mass 6 hanging structures under the support of spring beam.Insulating barrier 2 on the silicon base 1 has a window shape and becomes bond pad 9, as the joint of drawing of hearth electrode.First electrode 3 links to each other with bond pad 8 with second electrode 4 all leaded 7.
By shown in Figure 1, to make an inertial sensor and comprise at the bottom of the silicon wafer-based 1, substrate 1 has been carried out heavy doping phosphorus as drive electrode (hearth electrode).At the bottom of the silicon wafer-based on 1 deposit one layer thickness be the silica of 1000 , form insulating barrier 2 with the silicon nitride of 1500 , both sides on insulating barrier 2 be provided with respectively long 100 μ m * high 2 μ m (its width according to domain in figure settle coordinate) first strip electrode 3 and second electrode 4, this electrode is a polysilicon.The metal nanometer line of one group of 10 platinum is as resonance beam 5, its length is 15 μ m, and diameter is 20 nanometers, and this resonance beam 5 is taken second electrode 4 through mass 6 from first electrode 3, simultaneously, the metal nanometer line of platinum is also realized the electrical lead that is electrically connected as mass 6 and electrode 3 and electrode 4.Sacrifice layer below the corrosion mass, under the support of spring beam, can form mass 6 hanging structures, described mass 6 is positioned at the center on insulating barrier 2 tops, and mass is unsettled under the support of resonance beam, and the gap (air gap) between insulating barrier 2 and the mass 6 is 2 μ m.Gap between mass 6 and electrode 3 and 4 is at 4 μ m.Insulating barrier 2 on the silicon base 1 has a window shape and becomes bond pad 9, as the joint of drawing of hearth electrode.
By shown in Figure 1, to make an inertial sensor and comprise at the bottom of the silicon wafer-based 1, substrate 1 has been carried out heavy doping phosphorus as drive electrode (hearth electrode).At the bottom of the silicon wafer-based on 1 deposit one layer thickness be that the silica of 500 and the silicon nitride of 1700 form insulating barrier 2, other structure is with embodiment 1, just resonance beam 5 is used the GaP semiconductor nanowires, its length is between 15 μ m, diameter is 60 nanometers.Described mass 6 is positioned at the center on insulating barrier 2 tops, and mass is unsettled under the support of resonance beam, and the gap (air gap) between insulating barrier 2 and the mass 6 is 2.5 μ m; And mass 6 is fixed on the centre of first electrode 3 and second electrode 4 by the spring beam 5 of 2 groups of CNTs, and its mass 6 and gaps between electrodes are at 5 μ m.
Embodiment 4
The preparation method of inertia sensing structure of the present invention comprises two processes generally: MEMS technical process and monodimension nanometer material assembling process.The MEMS technical process mainly is to form to form needed electrode of inertial sensor structure and mass on silicon base, and the following process behind the last monodimension nanometer material of assembling; The nano material assembling process mainly is that monodimension nanometer material is assembled on the silicon chip that has carried out making in earlier stage.Finally obtain the inertial sensor structure for preparing.
In the present embodiment, the structure vertical view after the assembling of MEMS technical process and monodimension nanometer material finishes as shown in Figure 2,
Fig. 2 presses the embodiment that process sequence describes preparation method among the present invention in detail, comprises the steps A)～J), these step numbers A wherein)～J) (a)～(j) with Fig. 3 is corresponding one by one.Specific as follows:
A) monocrystalline silicon piece is as substrate 1, and the upper surface of substrate 1 is carried out heavy doping phosphorus, to form a doped layer (not shown) as hearth electrode, makes substrate 1 can be used as hearth electrode by being mixed in the surface of substrate 1 in other words;
B) adopt thermal oxidation method at silicon base 1 upper surface growth layer of silicon dioxide (SiO
2) 11, its thickness is: 200 are to 1000 ;
C) adopt Low Pressure Chemical Vapor Deposition (LPCVD) deposit one deck silicon nitride (Si
3N
4) 12, its thickness is that 1000 are to 2000 ; Step B) and step C) in the silicon dioxide layer 11 that obtains and silicon nitride layer 12 as the layer that stops of insulating barrier 2 and sacrifice layer etching;
D) use LPCVD deposit one deck phosphorosilicate glass (PSG) as sacrifice layer 13, all can between thickness 1 μ m to the 4 μ m;
E) by photoetching, reactive ion etching (RIE) patterned insulator layer (being silicon dioxide layer 11 and silicon nitride layer 12) and sacrifice layer 13, to remove the part of insulating barrier and sacrifice layer, form an opening area 14, thereby expose hearth electrode, as base electrode bond pad 8, this opening area 14 preferably is positioned at the position away from central authorities;
F) on sacrifice layer 13, use LPCVD deposit one deck polysilicon 15; Then polysilicon layer 15 is carried out heavy doping phosphorus, make this polysilicon layer 15 to conduct electricity.This heavy doping phosphorus can be as follows: deposit one deck phosphorosilicate glass on polysilicon layer 15, and under 1000 ℃, annealed 60 minutes, remove residual phosphorosilicate glass, the polysilicon layer after obtaining mixing with hydrofluoric acid at last;
G) directed assembling monodimension nanometer material 5 is to form spring beam 5.Specifically, monodimension nanometer materials such as CNT are carried out dispersion treatment and finishing, concrete dispersion treatment and finishing step comprise:
A. formulated suspension, CNT is carried out connect carboxylic group simultaneously in the process of truncation, detailed process is: get CNT and put into the single port flask, the red fuming nitric acid (RFNA) and the concentrated sulfuric acid that add 1: 3 proportioning, ultrasonic dispersion 1 hour is heated to 70 ℃ then, continues ultrasonic 1.5 hours, with a large amount of deionized water dilute solutions, left standstill one day; Incline and fall the upper strata acid solution, add entry again, left standstill one day, outwell the upper strata acid solution once more; Suction filtration, and drip washing, up to PH＞5, drying obtains the carboxylation CNT.Adopt the method for ultrasonic dispersion then, CNT is dispersed in the solvent of deionized water for example;
B. simultaneously, the chemical treatment amino monolayer of growing is carried out on the surface of polysilicon 13, make bonding more reliable between them to increase interaction force between monodimension nanometer material such as CNT and polysilicon 15 surfaces;
C. monodimension nanometer material suspension such as CNT are flow through with certain flow rate at polysilicon surface, realize the oriented alignment of monodimension nanometer material.
H) behind sputter one deck titanium coating on the polysilicon 15 that is placed with monodimension nanometer material 5, sputter one deck gold metal layer 16 again, and, form mass 6, electrode 3 and 4 and go between 7 and bond pad 8, and the figure of the bond pad 9 of hearth electrode etc. by chemical wet etching.This layer metal also plays the fixedly effect of monodimension nanometer material;
I) with H) in metal level after the photoetching as mask, by the graphical polysilicon layer 15 of Deep Reaction ion etching (ICP), with final formation mass 6, electrode 3 and 4 and lead-in wire and bond pad 7 and 8, and the bond pad 9 of hearth electrode; Limit by diagram, mass 6, electrode 3 and 4 only can be shown in Fig. 3 (a)-(j), and bond pad 9, still be easy to obtain the distribution of each parts in conjunction with Fig. 2;
J) with buffered hydrofluoric acid solution (BHF) corrosion phosphorosilicate glass sacrifice layer 13, wherein the part that is positioned at mass 6 belows in the sacrifice layer 13 to be removed,, and don't make electrode, lead-in wire and bond pad unsettled so that mass 6 is unsettled.Many etch pits 10 are arranged, to quicken the corrosion of the sacrifice layer under it in the mass 6.
Assembling monodimension nanometer material 5, can adopt that fluid is arranged, method such as electrophoresis or growth in situ is arranged in relevant position on electrode 3,4 and the mass 5 with monodimension nanometer material, by in advance to forming the polysilicon surface of mass 6 and electrode 3,4, and monodimension nanometer material carries out chemical modification, the surface of supporting nano material is fixed nano material by the effect and the Van der Waals force of chemical bond, and the coating effect by layer of metal at last realizes that micro-structural combines with the firm of monodimension nanometer material.
Can adopt the fluid driving method to arrange monodimension nanometer material in the present embodiment, concrete operations are: prepare the aaerosol solution of a dispersing nanometer carbon pipe, wherein CNT connects carboxylic group through chemical modification; The polysilicon upper edge that this solution is formed mass 6 and electrode 3,4 with certain speed is flow through perpendicular to the direction in mass and interelectrode gap, and polysilicon surface forms water-wetted surface by chemical treatment.When nanotube solution flow through, under the effect of chemical bond, the carboxylic group on the CNT can stick by chemical b ` with the hydrophilic radical of polysilicon surface, and longshore current is to being arranged in polysilicon surface when fluid flows, and arranged in the directed location of realization.At last, by splash-proofing sputtering metal layer 16, the CNT of arranging is coated on electrode and the mass.
Claims (10)
1, a kind of inertia sensor of micro-nano structure comprises: a silicon base 1 and the insulating barrier (2) that is provided with thereon, the electrode of fixing on insulating barrier (2) top, electrode top is fixed with resonance beam (5), contact conductor, an and mass (6), it is characterized in that, described electrode is (2) individual band shape, is separately positioned on the both sides on matrix insulating barrier (2) top; Described resonance beam (5) is 2 groups of monodimension nanometer materials, these 2 groups of resonance beam are taken respectively and are placed between mass (6) and first electrode (3) and the mass (6) and second electrode 4, perhaps described resonance beam (5) is one group, this one group of resonance beam (5) is taken on second electrode (4) from first electrode (3) through mass (6), and resonance beam (5) is being fixed with the contact-making surface place of electrode and mass; Described mass (6) is positioned at the center on insulating barrier (2) top, and mass is unsettled under the support of resonance beam, and the gap between insulating barrier (2) and the mass (6) is 0.3 μ m-4 μ m; Whole substrate (1) is as drive electrode, and the insulating barrier (2) on the silicon base (1) has a window shape and becomes bond pad (9), as the joint of drawing of hearth electrode; First electrode (3) links to each other with (8) with bond pad (7) with second electrode (4) is leaded respectively; Simultaneously, monodimension nanometer material is also realized the electrical lead that is electrically connected as mass (6) and electrode (3) and electrode (4).
2. the inertia sensor of micro-nano structure according to claim 1 is characterized in that, described resonance beam is a monodimension nanometer material, and this monodimension nanometer material comprises: carbon nano-fiber, nanometer carbon ribbon or CNT; Platinum, silver metal nano wire; With materials such as GaP, InP semiconductor nanowires.
3. the inertia sensor of micro-nano structure according to claim 1 is characterized in that, the size of described spring beam 5 is generally: length is between 2 μ m～30 μ m, and diameter is 1 nanometer to 100 nanometer.
4. the inertia sensor of micro-nano structure according to claim 1 is characterized in that, described insulating barrier is selected from silica and silicon nitride, and its silica and silicon nitride gross thickness are that 1600 are to 2500 .
5. the inertia sensor of micro-nano structure according to claim 1 is characterized in that, described electrode be polysilicon or polysilicon and on metal level, metal level comprises one deck titanium and one deck gold, titanium/gold metal layer thickness is between 0.3 μ m～4 μ m.
6. the inertia sensor of micro-nano structure according to claim 1, it is characterized in that, described mass 6 be polycrystalline silicon material or polycrystalline silicon material and on titanium/gold metal layer, the gap between the mass 6 and first electrode 3 and second electrode 4 is between 0.5 μ m～10 μ m.
7. a method for preparing the inertia sensor of the described micro-nano structure of claim 1 is characterized in that, comprises the steps as follows:
A. adopt conventional semiconductor technology to carry out phosphorus heavy doping to silicon base, form doped layer as drive electrode;
B. deposit one layer insulating on the silicon chip that step a) obtains, simultaneously also as the layer that stops of sacrifice layer corrosion, its thickness of insulating layer is 1600 to 2500 ;
C. deposit one deck sacrifice layer on the silicon chip that step b) obtains then, its sacrificial layer thickness is 0.3 μ m-4 μ m;
D. the electrode figure by design removes the part in described insulating barrier and the sacrifice layer, so that expose described base electrode: be deposited with insulating barrier and sacrifice layer silicon chip to what step c) obtained, adopt conventional semiconductor technology to carry out graphical etching and expose the required press welding block of described hearth electrode;
E. deposit one polysilicon layer on the silicon chip that graphically obtains through step d) again, its thickness is 0.3 μ m-4 μ m, and adopts conventional semiconductor technology that described polysilicon layer is carried out heavy doping phosphorus, makes described polysilicon layer to conduct electricity;
F. above-mentioned silicon chip being carried out surface chemical modification handles, the functional group that the polysilicon surface of the silica that is covered with autoxidation or artificial growth can be combined with monodimension nanometer material such as CNT: wherein surface chemical modification is handled and is comprised: with Piranha reagent cleaning silicon chip, then silicon chip is immersed in the hexane solution of 2mMKH-550 after 3 to 4 hours, clean with chloroform, take out the back and under 120 ℃, bake and bank up with earth;
G. utilize that common fluid flows, electric field driven, chemical deposition, the oriented alignment assembling is as the monodimension nanometer material of resonance beam on silicon base;
H. then described monodimension nanometer material is fixed on described electrode and the mass: be furnished with the graphical metal level of deposit on the silicon chip of monodimension nanometer material, wherein metal level comprises titanium/gold, its thickness at 400 to 1200 , and utilize this metal level to do the described polysilicon layer of mask etching, make described polysilicon layer morphoplasm gauge block and first and second electrodes and lead-in wire thereof;
I. the sacrifice layer corrosion of described mass below is removed, made that described mass is unsettled.
8. the preparation method of the inertia sensor of micro-nano structure according to claim 7, it is characterized in that, the insulating barrier of deposit in the described step b), comprise silicon dioxide layer that adopts the thermal oxidation method growth and the silicon nitride layer of on silicon dioxide layer, using the Low Pressure Chemical Vapor Deposition deposit.
9. the preparation method of the inertia sensor of micro-nano structure according to claim 7 is characterized in that, the sacrificial layer material in the described step c) is a phosphorosilicate glass.
10. the preparation method of the inertia sensor of micro-nano structure according to claim 7, it is characterized in that, in the described step e), described polysilicon is carried out heavy doping phosphorus to be comprised: deposit one deck phosphorosilicate glass on described polysilicon layer, its thickness 0.05 μ m is to 1 μ m and carry out annealing operation, removes residual phosphorosilicate glass at last.
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