CN111653531B - Double-current IGBT packaging structure and method thereof - Google Patents
Double-current IGBT packaging structure and method thereof Download PDFInfo
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- CN111653531B CN111653531B CN202010536799.1A CN202010536799A CN111653531B CN 111653531 B CN111653531 B CN 111653531B CN 202010536799 A CN202010536799 A CN 202010536799A CN 111653531 B CN111653531 B CN 111653531B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 230000017525 heat dissipation Effects 0.000 claims abstract description 46
- 238000009413 insulation Methods 0.000 claims abstract description 25
- 239000002826 coolant Substances 0.000 claims abstract description 10
- 229910001338 liquidmetal Inorganic materials 0.000 claims abstract description 10
- 239000004519 grease Substances 0.000 claims description 4
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
Abstract
The invention provides a double current IGBT packaging structure and a method thereof, the double current IGBT packaging structure comprises a substrate, a groove is arranged on the top of the substrate, a heat conduction layer and a heat insulation layer are sequentially arranged in the groove from top to bottom, an IGBT module is arranged on the top of the heat conduction layer, an electrode is arranged on one side of the IGBT module, the heat insulation layer isolates the IGBT module from the substrate, a high temperature area is arranged around the IGBT module, the bottom of the substrate is a low temperature area, the first heat conduction pipe and the second heat conduction pipe transmit heat generated by the IGBT module to the bottom of the substrate through the heat conduction layer by liquid metal coolant filled in the heat conduction layer, a larger heat difference is formed between the bottom of the substrate and a heat dissipation block, the heat dissipation block transmits the heat at the bottom of the substrate to a heat dissipation fin, the heat dissipation fin increases the contact area between the heat dissipation fin and air, the heat dissipation fin exchanges the heat to the air with lower temperature, thereby the double current IGBT packaging structure has better heat dissipation effect, the IGBT module can bear larger current.
Description
Technical Field
The invention relates to the technical field of IGBT (insulated gate bipolar transistor) packaging, in particular to a double-current IGBT packaging structure and a double-current IGBT packaging method.
Background
An IGBT insulated gate bipolar transistor is a composite full-control voltage-driven power semiconductor device composed of BJTs (bipolar junction transistors) and MOS (insulated gate field effect transistors), the IGBT device has the characteristics of high input resistance, high switching speed, low on-state voltage, high resistance-disconnection voltage, large current bearing and the like, has become a mainstream device developed by the current power semiconductor device, is widely applied to power electronic circuits in the fields of various alternating current motors, frequency converters, switching power supplies, lighting circuits, traction transmission and the like, is widely applied to various electronic equipment as a common electronic device, the heat generated during the operation of an IGBT chip is also increased when the IGBT chip bears larger current, when the IGBT device works, the generated heat can enable the temperature of the chip to rapidly rise to exceed the maximum allowable IGBT junction temperature, so that the performance of the IGBT is reduced or failed, and the heat dissipation of the IGBT is generally carried out by arranging heat dissipation at the bottom of a substrate through the heat exchange principle in the prior IGBT heat dissipation structure However, the heat dissipation efficiency of the heat dissipation structure is low, heat generated by the IGBT module cannot be quickly taken away in time, and the heat generated when the IGBT current is large cannot be taken away in time, so that the temperature of a chip rises rapidly, the IGBT cannot work normally, and the IGBT module cannot bear large current.
Disclosure of Invention
The embodiment of the invention provides a double-current IGBT packaging structure and a double-current IGBT packaging method.
In view of the above problems, the technical solution proposed by the present invention is:
a double current IGBT packaging structure comprises a substrate, wherein a groove is formed in the top of the substrate, a heat conduction layer and a heat insulation layer are sequentially arranged inside the groove from top to bottom, an IGBT module is arranged on the top of the heat conduction layer, an electrode is arranged on one side of the IGBT module, the electrode sequentially penetrates through the heat conduction layer, the heat insulation layer and the substrate from left to right and extends to the outside of the substrate, a heat dissipation block is arranged at the bottom of the substrate, a heat dissipation fin is arranged at the bottom of the heat dissipation block, a heat dissipation pipe is arranged inside the heat dissipation fin, a first heat conduction pipe is arranged on one side inside the substrate, a second heat conduction pipe is arranged on the other side inside the substrate, one end of the first heat conduction pipe sequentially penetrates through the substrate, the heat insulation layer and the heat conduction layer, and the two ends of the first heat conduction pipe are mutually communicated end to form a closed continuous pipeline, one end of the second heat conduction pipe sequentially penetrates through the substrate, the heat insulation layer and the heat conduction layer, two ends of the second heat conduction pipe are communicated end to form a closed continuous pipeline, and liquid metal coolant is filled in the first heat conduction pipe and the second heat conduction pipe.
In order to better realize the technical scheme of the invention, the following technical measures are also adopted.
Further, the shape and size of the first heat conduction pipe are consistent with those of the second heat conduction pipe, and the shape of the first heat conduction pipe and the shape of the second heat conduction pipe are of a structure which is continuously bent back and forth.
Furthermore, the number of the radiating pipes is multiple, and the radiating fins are transversely penetrated from left to right.
Furthermore, the contact part of the electrode, the heat conduction layer, the heat insulation layer and the substrate is filled with insulating glue.
Furthermore, the contact parts of the first heat conduction pipe and the second heat conduction pipe with the heat conduction layer, the heat insulation layer and the substrate are filled with heat dissipation silicone grease.
A heat dissipation method of a double-current IGBT packaging structure comprises the following steps:
s1, transferring heat, wherein the heat dissipated by the IGBT module is transferred to a first heat conduction pipe and a second heat conduction pipe through heat conduction layers respectively, the parts of the first heat conduction pipe and the second heat conduction pipe close to the IGBT module are heated, and liquid metal coolant filled in the first heat conduction pipe and the second heat conduction pipe is heated and transferred to the bottom of the substrate;
and S2, exchanging heat, wherein the heat at the bottom of the substrate is transferred to the radiating block, the radiating block transfers the heat to the radiating fin, and the radiating fin increases the contact area of the radiating fin and the air and exchanges the heat to the air with relatively low temperature.
Compared with the prior art, the invention has the beneficial effects that: the insulating layer keeps apart IGBT module and base plate, be the high temperature district around the IGBT module, the base plate bottom is the low temperature district, first heat pipe and second heat pipe pass through the heat-conducting layer with the bottom that the heat that the IGBT module produced transmits the base plate through the liquid metal coolant of inside packing, the bottom of base plate forms great heat difference with the radiating block, the radiating block transmits the fin with the heat of base plate bottom, the cooling tube increases the area of contact of fin with the air, the fin exchanges the heat to the lower air of temperature, thereby make double electric current IGBT packaging structure have better radiating effect, make the IGBT module can bear bigger electric current.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
Fig. 1 is a schematic diagram of a front cross-sectional structure of a double-current IGBT package structure disclosed in an embodiment of the present invention;
FIG. 2 is an enlarged schematic view of the structure at A in FIG. 1;
FIG. 3 is a schematic side-sectional structure view of a double-current IGBT package structure disclosed in the embodiment of the present invention;
fig. 4 is a schematic flow chart of a heat dissipation method of a double-current IGBT package structure disclosed in the embodiment of the present invention.
Reference numerals:
1-a substrate; 2-heat conducting layer; 3-a heat insulation layer; 4-an IGBT module; 5-an electrode; 6-a first heat conduction pipe; 7-a second heat pipe; 8-a heat dissipation block; 9-a heat sink; 10-radiating pipes; 11-grooves.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Referring to the attached drawings 1-3, a groove 11 is formed in the top of the substrate 1, a heat conduction layer 2 and a heat insulation layer 3 are sequentially arranged inside the groove 11 from top to bottom, the heat conduction layer 2 is used for transferring heat generated by the IGBT module 4 to the outside, the heat insulation layer 3 is used for isolating the IGBT module 4 from contacting the substrate 1, so that a large temperature difference is formed at the bottom of the substrate 1, the heat exchange efficiency is improved, the IGBT module 4 is arranged on the top of the heat conduction layer 2, an electrode 5 is arranged on one side of the IGBT module 4, the electrode 5 sequentially penetrates through the heat conduction layer 2, the heat insulation layer 3 and the substrate 1 from left to right and extends to the outside of the substrate 1, and the contact part of the electrode 5 with the heat conduction layer 2, the heat insulation layer 3 and the substrate 1 is filled with an insulation adhesive to prevent the IGBT module 4 from short circuit and damage to the IGBT module 4 and other components, the bottom of the base plate 1 is provided with a radiating block 8, the bottom of the radiating block 8 is provided with a radiating fin 9, the radiating fin 9 is internally provided with a radiating pipe 10, the radiating pipe 10 is of an internal hollow structure, the heat exchange contact area of the radiating fin 9 and air with lower temperature is increased through the connection with the radiating fin 9, the radiating performance of the radiating fin 9 is enhanced, one side in the base plate 1 is provided with a first heat conduction pipe 6, the other side in the base plate 1 is provided with a second heat conduction pipe 7, one end of the first heat conduction pipe 6 sequentially penetrates through the base plate 1, the heat insulation layer 3 and the heat conduction layer 2, the two ends of the first heat conduction pipe 6 are communicated with one another end to form a closed continuous pipeline, one end of the second heat conduction pipe 7 sequentially penetrates through the base plate 1, the heat insulation layer 3 and the heat conduction layer 2, and the two ends of the two heat conduction pipes are communicated with one another end to form a closed continuous pipeline, the liquid metal coolant is filled in the first heat conduction pipe and the second heat conduction pipe, the contact part of the first heat conduction pipe 6 and the second heat conduction pipe 7 with the heat conduction layer 2, the heat insulation layer 3 and the substrate 1 is filled with heat dissipation silicone grease, the heat dissipation silicone grease fully fills gaps among the first heat conduction pipe 6, the second heat conduction pipe 7, the heat conduction layer 2, the heat insulation layer 3 and the substrate 1, heat transfer is facilitated, the heat insulation layer 3 isolates the IGBT module 4 from the substrate 1, a high temperature region is arranged around the IGBT module 4, the bottom of the substrate 1 is a low temperature region, the first heat conduction pipe 6 and the second heat conduction pipe 7 transfer heat generated by the IGBT module 4 to the bottom of the substrate 1 through the heat conduction layer 2 through the liquid metal coolant filled in the heat conduction layer, a large heat difference is formed between the bottom of the substrate 1 and the heat dissipation block 8, the heat dissipation block 8 transfers the heat at the bottom of the substrate 1 to the heat dissipation fin 9, the radiating pipe 10 increases the contact area of the radiating fin 9 and air, and the radiating fin 9 exchanges heat to the air with lower temperature, so that the double-current IGBT packaging structure has better radiating effect, and the IGBT module 4 can bear larger current.
The embodiment of the invention is also realized by the following technical scheme.
Referring to fig. 1 to 3, in the embodiment of the present invention, the shape and size of the first heat conductive pipe 6 are identical to those of the second heat conductive pipe 7, and the shape of the first heat conductive pipe 6 and the second heat conductive pipe 7 is a structure that is continuously bent back and forth.
In this embodiment, first heat pipe 6 with second heat pipe 7 distributes respectively in the bottom and the both sides of IGBT module 4, first heat pipe 6 with the structure that second heat pipe 7 makes a round trip to bend in succession can increase with heat-conducting layer 2's area of contact, furthest's absorption IGBT module 4 produced heat, simultaneously with heat furthest's transmission to radiating block 8 in the bottom of base plate 1, radiating block 8 passes through fin 9 and cooling tube 10 and accomplishes the heat exchange with the lower cold air of temperature to make double electric current IGBT packaging structure have better radiating effect, make IGBT module 4 can bear bigger electric current.
Referring to fig. 1 and 3, in the embodiment of the present invention, a plurality of radiating pipes 10 are provided, and extend transversely through the radiating fins 9 from left to right.
In this embodiment, the heat dissipation pipe 10 is transversely connected to the heat dissipation plate 9, and the heat dissipation plate 9 is reinforced by the heat dissipation pipe 10 with a hollow interior through the connection with the heat dissipation plate 9 to increase the heat exchange contact area between the heat dissipation plate 9 and the air with a lower temperature, so that the double-current IGBT package structure has a better heat dissipation effect, and the IGBT module 4 can bear a larger current.
Referring to fig. 1-4, a heat dissipation method for a double current IGBT package structure includes the following steps:
s1, transferring heat, wherein the heat dissipated by the IGBT module 4 is transferred to the first heat conduction pipe 6 and the second heat conduction pipe 7 through the heat conduction layer 2, the portions of the first heat conduction pipe 6 and the second heat conduction pipe 7 close to the IGBT module 4 are heated, and the liquid metal coolant filled in the first heat conduction pipe 6 and the second heat conduction pipe 7 is heated and transferred to the bottom of the substrate 1;
s2, heat is exchanged, the heat at the bottom of the substrate 1 is transferred to the heat dissipation block 8, the heat dissipation block 8 transfers the heat to the heat dissipation plate 9, and the heat dissipation tube 10 increases the contact area between the heat dissipation plate 9 and the air, and exchanges the heat to the air with relatively low temperature.
The method comprises the following specific implementation steps: insulating layer 3 keeps apart IGBT module 4 and base plate 1, be the high temperature area around IGBT module 4, base plate 1 bottom is the low temperature district, the heat that IGBT module 4 gived off passes through heat-conducting layer 2 and transmits first heat pipe 6 and second heat pipe 7 respectively, the part that first heat pipe 6 and second heat pipe 7 are close to IGBT module 4 is heated, the liquid metal coolant of filling in first heat pipe 6 and second heat pipe 7 inside is heated and is transmitted the bottom of base plate 1, the heat transmission of base plate 1 bottom is to radiating block 8, radiating block 8 transmits the heat to fin 9, radiating pipe 10 increases the area of contact of fin 9 and air, exchange the heat in the air that the temperature is relatively lower, thereby make double electric current IGBT packaging structure have better radiating effect, make IGBT module 4 can bear bigger electric current.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (7)
1. A double current IGBT packaging structure is characterized by comprising a substrate, wherein a groove is formed in the top of the substrate, a heat conduction layer and a heat insulation layer are sequentially arranged in the groove from top to bottom, an IGBT module is arranged on the top of the heat conduction layer, an electrode is arranged on one side of the IGBT module, the electrode sequentially penetrates through the heat conduction layer, the heat insulation layer and the substrate from left to right and extends to the outside of the substrate, a heat dissipation block is arranged at the bottom of the substrate, a heat dissipation fin is arranged at the bottom of the heat dissipation block, a heat dissipation tube is arranged in the heat dissipation fin, a first heat conduction tube is arranged on one side in the substrate, a second heat conduction tube is arranged on the other side in the substrate, one end of the first heat conduction tube sequentially penetrates through the substrate, the heat insulation layer and the heat conduction layer, and the two ends of the first heat conduction tube are communicated with one another end to form a closed continuous pipeline, one end of the second heat conduction pipe sequentially penetrates through the substrate, the heat insulation layer and the heat conduction layer, two ends of the second heat conduction pipe are communicated end to form a closed continuous pipeline, and liquid metal coolant is filled in the first heat conduction pipe and the second heat conduction pipe.
2. The double current IGBT package structure of claim 1, wherein: the shape and the size of the first heat conduction pipe are consistent with those of the second heat conduction pipe, and the shapes of the first heat conduction pipe and the second heat conduction pipe are structures which are continuously bent back and forth.
3. The double current IGBT package structure of claim 1, wherein: the radiating tubes are multiple in number and transversely penetrate through the radiating fins from left to right.
4. The double current IGBT package structure of claim 1, wherein: and the contact parts of the electrodes, the heat conduction layer, the heat insulation layer and the substrate are filled with insulating glue.
5. The double current IGBT package structure of claim 1, wherein: the contact parts of the first heat conduction pipe and the second heat conduction pipe with the heat conduction layer, the heat insulation layer and the substrate are filled with heat dissipation silicone grease.
6. The double current IGBT package structure of claim 1, wherein: the substrate is made of copper.
7. A heat dissipation method applied to the double-current IGBT packaging structure of any one of claims 1-6 is characterized by comprising the following steps:
s1, transferring heat, wherein the heat dissipated by the IGBT module is transferred to a first heat conduction pipe and a second heat conduction pipe through heat conduction layers respectively, the parts of the first heat conduction pipe and the second heat conduction pipe close to the IGBT module are heated, and liquid metal coolant filled in the first heat conduction pipe and the second heat conduction pipe is heated and transferred to the bottom of the substrate;
and S2, exchanging heat, wherein the heat at the bottom of the substrate is transferred to the radiating block, the radiating block transfers the heat to the radiating fin, and the radiating fin increases the contact area of the radiating fin and the air and exchanges the heat to the air with relatively low temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010536799.1A CN111653531B (en) | 2020-06-12 | 2020-06-12 | Double-current IGBT packaging structure and method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010536799.1A CN111653531B (en) | 2020-06-12 | 2020-06-12 | Double-current IGBT packaging structure and method thereof |
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| Publication Number | Publication Date |
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| CN111653531A CN111653531A (en) | 2020-09-11 |
| CN111653531B true CN111653531B (en) | 2021-11-30 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115665970B (en) * | 2022-10-08 | 2023-11-21 | 江苏东海半导体股份有限公司 | IGBT drive protection circuit board |
| CN115763396B (en) * | 2022-11-03 | 2024-02-02 | 江苏东海半导体股份有限公司 | Antistatic IGBT module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004111430A (en) * | 2002-09-13 | 2004-04-08 | Yaskawa Electric Corp | Power module |
| CN201064074Y (en) * | 2007-03-09 | 2008-05-21 | 王晓光 | Heat pipe radiator |
| CN202239598U (en) * | 2011-08-10 | 2012-05-30 | 浙江中产科技有限公司 | Recognizer with high temperature resistance and fast assembly and disassembly |
| CN206564753U (en) * | 2017-03-14 | 2017-10-17 | 绵阳博恒微波科技有限公司 | A kind of heat abstractor of microwave power amplifier |
-
2020
- 2020-06-12 CN CN202010536799.1A patent/CN111653531B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004111430A (en) * | 2002-09-13 | 2004-04-08 | Yaskawa Electric Corp | Power module |
| CN201064074Y (en) * | 2007-03-09 | 2008-05-21 | 王晓光 | Heat pipe radiator |
| CN202239598U (en) * | 2011-08-10 | 2012-05-30 | 浙江中产科技有限公司 | Recognizer with high temperature resistance and fast assembly and disassembly |
| CN206564753U (en) * | 2017-03-14 | 2017-10-17 | 绵阳博恒微波科技有限公司 | A kind of heat abstractor of microwave power amplifier |
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