CN111650492A - Through silicon via adapter plate wafer testing device and testing method - Google Patents
Through silicon via adapter plate wafer testing device and testing method Download PDFInfo
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- CN111650492A CN111650492A CN202010417349.0A CN202010417349A CN111650492A CN 111650492 A CN111650492 A CN 111650492A CN 202010417349 A CN202010417349 A CN 202010417349A CN 111650492 A CN111650492 A CN 111650492A
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- probe
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Leads Or Probes (AREA)
Abstract
The invention discloses a through silicon via adapter plate wafer testing device and a testing method, which comprises a rotating disc, wherein the rotating disc comprises a disc body, a first connecting hole, a base column and a through hole, the first connecting hole is formed in the edge of the upper end of the disc body, the base column is arranged in the middle of the upper end of the disc body, the through hole is formed in the end face of the upper end of the base column, a detection mounting structure is arranged at the upper end of the disc body, a butt joint structure is inserted and connected into the through hole and is matched with the detection mounting structure, a probe structure is arranged above the butt joint structure and is matched with the butt joint structure, and the detection mounting structure comprises a fan-shaped sub disc, a detection groove, an arc-shaped groove and a second. According to the through silicon via adapter plate wafer testing device and the testing method, the detection of the wafer in the detection groove is realized by utilizing the probe structure and the butt joint structure, the probe structure is effectively prevented from directly contacting the wafer, and the wafer detection safety performance is improved to a certain extent.
Description
Technical Field
The invention relates to the field of wafer detection equipment, in particular to a through silicon via adapter plate wafer testing device and a testing method.
Background
A wafer refers to a substrate (also called a substrate) from which semiconductor transistors or integrated circuits are fabricated. Since it is a crystalline material, it is called a wafer because it is circular in shape. The substrate material is silicon, germanium, GaAs, InP, GaN, etc. Since silicon is most commonly used, if no crystalline material is specified, silicon wafers are commonly used, and various circuit element structures can be fabricated on the silicon wafers to form integrated circuit products with specific electrical functions. The starting material for the wafer is silicon, while the crust surface has an inexhaustible amount of silicon dioxide. The silicon dioxide ore is refined by an electric arc furnace, chlorinated by hydrochloric acid and distilled to prepare high-purity polysilicon; in the wafer detection process, the probe structure directly contacts the wafer, so that the wafer body is fragile and easy to damage.
Disclosure of Invention
The invention mainly aims to provide a through silicon via adapter plate wafer testing device and a testing method, which can effectively solve the problems in the background technology.
In order to achieve the purpose, the invention adopts the technical scheme that:
the utility model provides a through-silicon-via keysets wafer testing arrangement, includes the rolling disc, the rolling disc includes disk body, first connecting hole, foundation column, through-hole, and the upper end edge of disk body has seted up first connecting hole, be provided with the foundation column in the middle of the disk body upper end, and foundation column upper end terminal surface has seted up the through-hole, the upper end of disk body is provided with detects mounting structure, the downthehole butt joint structure that is connected with of through-hole, and butt joint structure and detection mounting structure adaptation setting, butt joint structure's top is provided with the probe structure, and probe structure and butt joint structure adaptation setting.
Preferably, the detection mounting structure comprises a fan-shaped separating disc, a detection groove, an arc-shaped groove and a second connecting hole, the detection groove is formed in the side wall of the fan-shaped separating disc, the second connecting hole is formed in the edge of the upper end of the fan-shaped separating disc, and the arc-shaped groove is formed in the inner wall of the fan-shaped separating disc.
Preferably, the upper end of the tray body is provided with four fan-shaped sub trays, a first connecting hole formed in the tray body is aligned with a second connecting hole formed in the fan-shaped sub tray, the arc-shaped grooves formed in the four fan-shaped sub trays in the upper end of the tray body form a round hole, and the base column arranged in the upper end of the tray body is inserted into the round hole formed by the arc-shaped grooves.
Preferably, the butt joint structure includes a cross, a butt joint column, a middle butt joint disc, a clamping hole and a first probe, the lower end of the cross is provided with the butt joint column, the edge of the cross is provided with the middle butt joint disc, the upper end of the middle butt joint disc is provided with the clamping hole, and the first probe is inserted and connected in the hole of the clamping hole.
Preferably, the first probe penetrates through a clamping hole formed in the middle butt joint disc, the lower end of the first probe is opposite to a detection groove formed in the fan-shaped branch disc, the cross, the butt joint column and the middle butt joint disc are integrally arranged, and the butt joint column is connected through the threaded base column.
Preferably, the probe structure comprises a circuit board, a disc and a second probe, the disc is arranged at the lower end of the circuit board, and the second probe is arranged at the lower end of the disc.
Preferably, the circuit board is connected with the telescopic structure, the second probe is opposite to the first probe arranged at the upper end of the middle butt joint disc, and burrs are arranged between the first probe and the middle butt joint disc.
A through silicon via interposer wafer test method comprises the following steps:
the method comprises the following steps: preparing, namely installing the equipment, finishing the preparation, and placing the wafer into a detection groove;
step two: when the wafer is detected, the probe structure moves downwards, the probe structure extrudes the first probe arranged on the butt joint structure, the second probe is contacted with the first probe and extrudes downwards, the first probe extrudes downwards to contact the wafer, and the first probe and the second probe detect the wafer;
step three: after the detection is finished, the probe structure moves upwards, the second probe is separated from the first probe, and the detection process is finished;
step four: and taking out the wafer, manually taking out the wafer in the detection groove, and lifting the first probe by contacting the back of the hand with the lower end of the first probe so as to conveniently place the wafer next time.
Compared with the prior art, the invention has the following beneficial effects: the silicon through hole adapter plate wafer testing device and the testing method comprise the following steps:
the wafer in the detection groove is detected by utilizing the probe structure and the butt joint structure, so that the probe structure is effectively prevented from directly contacting the wafer, and the wafer detection safety performance is improved to a certain extent;
the whole through silicon via adapter plate wafer testing device and the testing method are simple in structure, convenient to operate and better in using effect compared with the traditional mode.
Drawings
FIG. 1 is a schematic diagram of an overall structure of a through-silicon-via interposer wafer testing apparatus and a testing method according to the present invention;
FIG. 2 is a schematic diagram of a split structure of a through-silicon-via interposer wafer testing apparatus and a testing method according to the present invention;
FIG. 3 is a schematic view of a rotary plate of a through-silicon-via interposer wafer testing apparatus and a testing method according to the present invention;
FIG. 4 is a schematic diagram of a testing and mounting structure of a through-silicon-via interposer wafer testing apparatus and a testing method according to the present invention;
FIG. 5 is a schematic diagram of a docking structure of a through-silicon-via interposer wafer testing apparatus and a testing method according to the present invention;
fig. 6 is a schematic structural diagram of a probe structure of a through silicon via interposer wafer testing apparatus and a testing method according to the present invention.
In the figure: 1. rotating the disc; 101. a tray body; 102. a first connection hole; 103. a base pillar; 104. a through hole; 2. detecting the mounting structure; 201. sectorial separation; 202. a detection tank; 203. an arc-shaped slot; 204. a second connection hole; 3. a butt joint structure; 301. a cross; 302. butting columns; 303. a middle butt plate; 304. a clamping hole; 305. a first probe; 4. a probe structure; 401. a circuit board; 402. a disc; 403. a second probe.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front", "rear", "both ends", "one end", "the other end", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "connected," and the like are to be construed broadly, such as "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As shown in fig. 1-6, a through silicon via adapter plate wafer testing device and testing method includes a rotating disk 1, the rotating disk 1 includes a disk body 101, a first connection hole 102, a base column 103, a through hole 104, the first connection hole 102 is disposed at the edge of the upper end of the disk body 101, the base column 103 is disposed in the middle of the upper end of the disk body 101, the through hole 104 is disposed on the end surface of the upper end of the base column 103, a detection mounting structure 2 is disposed at the upper end of the disk body 101, a docking structure 3 is inserted into the through hole 104, the docking structure 3 and the detection mounting structure 2 are arranged in an adaptive manner, a probe structure 4 is disposed above the docking structure 3, and the probe structure 4 and the docking structure.
The detection mounting structure 2 comprises a fan-shaped separation disc 201, a detection groove 202, an arc-shaped groove 203 and a second connecting hole 204, wherein the side wall of the fan-shaped separation disc 201 is provided with the detection groove 202, the edge of the upper end of the fan-shaped separation disc 201 is provided with the second connecting hole 204, and the inner wall of the fan-shaped separation disc 201 is provided with the arc-shaped groove 203; the upper end of the tray body 101 is provided with four fan-shaped sub trays 201, a first connecting hole 102 formed in the tray body 101 is aligned with a second connecting hole 204 formed in the fan-shaped sub tray 201, arc-shaped grooves 203 formed in the four fan-shaped sub trays 201 in the upper end of the tray body 101 form a round hole, and a base column 103 arranged in the upper end of the tray body 101 is inserted into the round hole formed by the arc-shaped grooves 203; the docking structure 3 comprises a cross 301, a docking post 302, a middle docking plate 303, a clamping hole 304 and a first probe 305, wherein the lower end of the cross 301 is provided with the docking post 302, the edge of the cross 301 is provided with the middle docking plate 303, the upper end of the middle docking plate 303 is provided with the clamping hole 304, and the first probe 305 is inserted and connected into the hole of the clamping hole 304; the first probe 305 penetrates through a clamping hole 304 formed in the middle butt joint disc 303, the lower end of the first probe 305 is opposite to the detection groove 202 formed in the fan-shaped sub disc 201, the cross 301, the butt joint column 302 and the middle butt joint disc 303 are integrally arranged, and the butt joint column 302 is connected through the threaded base column 103; the probe structure 4 comprises a circuit board 401, a disc 402 and a second probe 403, wherein the disc 402 is arranged at the lower end of the circuit board 401, and the second probe 403 is arranged at the lower end of the disc 402; the circuit board 401 is connected with the telescopic structure, the second probe 403 is over against the first probe 305 arranged at the upper end of the middle butt joint plate 303, and burrs are arranged between the first probe 305 and the middle butt joint plate 303; the detection of the wafer in the detection groove 202 is realized by utilizing the probe structure 4 and the butt joint structure 3, the probe structure 4 is effectively prevented from directly contacting the wafer, and the wafer detection safety performance is improved to a certain extent.
A through silicon via interposer wafer test method comprises the following steps:
the method comprises the following steps: preparing, namely installing the equipment, finishing the preparation, and placing the wafer into a detection groove;
step two: when the wafer is detected, the probe structure moves downwards, the probe structure extrudes the first probe arranged on the butt joint structure, the second probe is contacted with the first probe and extrudes downwards, the first probe extrudes downwards to contact the wafer, and the first probe and the second probe detect the wafer;
step three: after the detection is finished, the probe structure moves upwards, the second probe is separated from the first probe, and the detection process is finished;
step four: and taking out the wafer, manually taking out the wafer in the detection groove, and lifting the first probe by contacting the back of the hand with the lower end of the first probe so as to conveniently place the wafer next time.
It should be noted that, the invention is a silicon through hole adapter plate wafer testing device and testing method, when assembling the rotating disc 1, the detecting and mounting structure 2, the butt-joint structure 3, and the probe structure 4, the upper end of the circuit board 401 arranged on the probe structure 4 is connected with the telescopic structure, the lower end of the fan-shaped sub disc 201 contacts the end surface of the disc body 101 arranged on the upper end of the rotating disc 1, the fan-shaped sub disc 201 is rotationally adjusted, the position of the second connecting hole 204 arranged on the fan-shaped sub disc 201 is adjusted until the second connecting hole 204 is aligned with the first connecting hole 102 arranged on the upper end of the disc body 101, the bolt is inserted into the hole of the second connecting hole 204, the bolt penetrates through the second connecting hole 204 and is inserted into the hole of the first connecting hole 102, the fixed connection between the single fan-shaped sub disc 201 and the disc body 101 is realized, the fixed connection between the fan-shaped sub disc 201 and the disc body 101 one by one, the circular holes are formed by the arc-shaped grooves, the lower end of a first probe 305 arranged on the butt joint structure 3 is inserted to align with a clamping hole 304 arranged at the upper end of a middle butt joint disc 303, a baffle plate at the upper end of the first probe 305 contacts with a hole at the upper end of the clamping hole 304 arranged on the middle butt joint disc 303, a butt joint column 302 and a cross 301 are integrally arranged, the butt joint column 302 arranged at the lower end of the cross 301 is inserted into a through hole 104 arranged at the upper end of a base column 103, and the butt joint column 302 is connected with the base column 103 through threads, so that the fixed connection between the butt joint structure 3 and the rotating disc 1 is realized, when in use, a silicon through hole adapter plate wafer is placed into a detection groove 202 arranged on a fan-shaped sub disc 201, the upper end of the silicon through hole adapter plate wafer is opposite to the first probe 305 arranged on the butt joint structure 3, the upper end of the first probe 305 is opposite to a second probe 403 arranged on the probe structure 4, the second probe 403 presses the first probe 305, the first probe 305 moves downwards, the first probe 305 and the middle docking plate 303 are fixed through friction, the first probe 305 moves downwards to contact with a through silicon via adapter plate wafer, the upper end of the first probe 305 contacts with the second probe 403, the first probe 305 and the second probe 403 detect the through silicon via adapter plate wafer, the through silicon via adapter plate wafer is detected, the probe structure 4 is lifted, and in the process of taking out the through silicon via adapter plate wafer, the first probe 305 is pressed upwards by the back of the hand, so that the height of the first probe 305 is lifted.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (8)
1. The utility model provides a through-silicon via keysets wafer test device which characterized in that: including rolling disc (1), rolling disc (1) includes disk body (101), first connecting hole (102), pillar (103), through-hole (104), and first connecting hole (102) have been seted up to the upper end edge of disk body (101), be provided with pillar (103) in the middle of disk body (101) upper end, and pillar (103) upper end terminal surface has seted up through-hole (104), the upper end of disk body (101) is provided with detects mounting structure (2), through-hole (104) downthehole insertion is connected with butt-joint structure (3), and butt-joint structure (3) and detection mounting structure (2) adaptation setting, the top of butt-joint structure (3) is provided with probe structure (4), and probe structure (4) and butt-joint structure (3) adaptation setting.
2. The through silicon via interposer wafer test device of claim 1, wherein: detect mounting structure (2) including fan-shaped minute dish (201), detect groove (202), arc wall (203), second connecting hole (204), and fan-shaped minute dish (201) lateral wall has seted up and has detected groove (202), second connecting hole (204) have been seted up to the upper end edge of fan-shaped minute dish (201), and arc wall (203) have been seted up to the inner wall of fan-shaped minute dish (201).
3. The through silicon via interposer wafer test device of claim 2, wherein: the upper end of the tray body (101) is provided with four fan-shaped sub trays (201), a first connecting hole (102) formed in the tray body (101) is aligned with a second connecting hole (204) formed in the fan-shaped sub tray (201), arc-shaped grooves (203) formed in the four fan-shaped sub trays (201) in the upper end of the tray body (101) form round holes, and a base column (103) arranged in the upper end of the tray body (101) is inserted into the round holes formed by the arc-shaped grooves (203).
4. The through silicon via interposer wafer test device of claim 3, wherein: butt joint structure (3) are including cross (301), docking post (302), middle butt joint dish (303), block hole (304), first probe (305), and the lower extreme of cross (301) is provided with butt joint post (302), the edge of cross (301) is provided with middle butt joint dish (303), and the upper end of middle butt joint dish (303) has seted up block hole (304), the downthehole first probe (305) of inserting of block hole (304) is connected with.
5. The through silicon via interposer wafer test device of claim 4, wherein: the first probe (305) penetrates through a clamping hole (304) formed in the middle butt joint disc (303), the lower end of the first probe (305) is opposite to a detection groove (202) formed in the fan-shaped sub disc (201), the cross (301), the butt joint column (302) and the middle butt joint disc (303) are integrally arranged, and the butt joint column (302) is connected through the threaded base column (103).
6. The through silicon via interposer wafer test device of claim 5, wherein: the probe structure (4) comprises a circuit board (401), a disc (402) and a second probe (403), the disc (402) is arranged at the lower end of the circuit board (401), and the second probe (403) is arranged at the lower end of the disc (402).
7. The through silicon via interposer wafer test device of claim 6, wherein: the circuit board (401) is connected with the telescopic structure, the second probe (403) is over against the first probe (305) arranged at the upper end of the middle butt joint disc (303), and burrs are arranged between the first probe (305) and the middle butt joint disc (303).
8. A through silicon via interposer wafer test method comprises the following steps:
the method comprises the following steps: preparing, namely installing the equipment, finishing the preparation, and placing the wafer into a detection groove;
step two: when the wafer is detected, the probe structure moves downwards, the probe structure extrudes the first probe arranged on the butt joint structure, the second probe is contacted with the first probe and extrudes downwards, the first probe extrudes downwards to contact the wafer, and the first probe and the second probe detect the wafer;
step three: after the detection is finished, the probe structure moves upwards, the second probe is separated from the first probe, and the detection process is finished;
step four: and taking out the wafer, manually taking out the wafer in the detection groove, and lifting the first probe by contacting the back of the hand with the lower end of the first probe so as to conveniently place the wafer next time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010417349.0A CN111650492A (en) | 2020-05-18 | 2020-05-18 | Through silicon via adapter plate wafer testing device and testing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010417349.0A CN111650492A (en) | 2020-05-18 | 2020-05-18 | Through silicon via adapter plate wafer testing device and testing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111650492A true CN111650492A (en) | 2020-09-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010417349.0A Pending CN111650492A (en) | 2020-05-18 | 2020-05-18 | Through silicon via adapter plate wafer testing device and testing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111650492A (en) |
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2020
- 2020-05-18 CN CN202010417349.0A patent/CN111650492A/en active Pending
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