CN111641395B

CN111641395B - Radio frequency power amplifier and method for realizing radio frequency signal amplification

Info

Publication number: CN111641395B
Application number: CN202010521406.XA
Authority: CN
Inventors: 苏强; 李平
Original assignee: Guangzhou Huizhi Microelectronics Co ltd
Current assignee: Guangzhou Huizhi Microelectronics Co ltd
Priority date: 2020-06-10
Filing date: 2020-06-10
Publication date: 2023-10-03
Anticipated expiration: 2040-06-10
Also published as: CN111641395A

Abstract

The embodiment of the application discloses a radio frequency power amplifier, which comprises a multi-stage amplifying circuit and a gating switching circuit, wherein the multi-stage amplifying circuit comprises a first-stage amplifying circuit and a second-stage amplifying circuit which are cascaded, and the gating switching circuit is used for enabling an input signal of the radio frequency power amplifier to be amplified through the first-stage amplifying circuit or the second-stage amplifying circuit through switch control when a first working instruction is received; and when receiving a second working instruction, the input signal of the radio frequency power amplifier is subjected to signal amplification through the multistage amplifying circuit by means of switch control. The embodiment of the application also discloses a method for realizing the amplification of the radio frequency signals.

Description

Radio frequency power amplifier and method for realizing radio frequency signal amplification

Technical Field

The application relates to the technical field of signal processing, in particular to a radio frequency power amplifier and a method for realizing radio frequency signal amplification.

Background

The rf power amplifier may typically perform an amplification process of the rf signal by a cascaded driver stage amplification circuit and power stage amplification circuit before the rf signal is transmitted to the antenna. In the relative technology, the working state of the radio frequency power amplifier is usually switched by setting different bias voltages for the driving stage amplifying circuit and the power stage amplifying circuit, or by adding additional amplifying devices and amplifying circuits. However, in the above power amplification scheme, the nonlinear characteristics of the rf power amplifier may be exacerbated or the complexity of the rf power amplifier circuit may be increased.

Disclosure of Invention

In view of this, the embodiments of the present application provide a radio frequency power amplifier and a method for implementing radio frequency signal amplification, which can implement separate control of the operating states of amplifying circuits at each stage in the radio frequency power amplifier without adding additional amplifying devices, thereby reducing the nonlinearity degree and the circuit complexity of the radio frequency power amplifier.

The implementation scheme of the radio frequency power amplifier provided by the application is as follows:

the radio frequency power amplifier comprises a multi-stage amplifying circuit and a gating switching circuit, wherein the multi-stage amplifying circuit comprises a first-stage amplifying circuit and a second-stage amplifying circuit which are cascaded,

the gating switching circuit is used for enabling an input signal of the radio frequency power amplifier to be subjected to signal amplification through the first-stage amplifying circuit or the second-stage amplifying circuit through switch control when a first working instruction is received; and when receiving a second working instruction, the input signal of the radio frequency power amplifier is subjected to signal amplification through the multistage amplifying circuit by means of switch control.

Optionally, the gating switching circuit includes a first switch group and a first coupling circuit; the first switch group is used for responding to the first working instruction and realizing the connection between the input end of the radio frequency power amplifier and the second-stage amplifying circuit; the first coupling circuit is used for matching the input end of the second-stage amplifying circuit to a first preset state.

Optionally, the first switch group includes a first switch and a second switch; wherein the first switch is located between the first coupling circuit and a ground terminal of the radio frequency power amplifier; and the second switch is used for realizing connection or disconnection of the first coupling circuit and the second-stage amplifying circuit.

Optionally, the first coupling circuit includes a first coupling capacitor, a second coupling capacitor and a first coupling inductor; the first coupling capacitor is arranged between the input end of the radio frequency power amplifier and the first switch; the branch circuit formed by the second coupling capacitor and the first coupling inductor is arranged between the input end of the radio frequency power amplifier and the input end of the second-stage amplifying circuit.

Optionally, the gating switching circuit includes a second switch group and a second coupling circuit; the second switch group is used for responding to the second working instruction and realizing the connection between the input end of the radio frequency power amplifier and the multistage amplifying circuit; the second coupling circuit is used for matching the input end of the first-stage amplifying circuit to a second preset state.

Optionally, the second switch group includes a third switch, a fourth switch and a fifth switch; the third switch is positioned between the second coupling circuit and the grounding end of the radio frequency power amplifier; the fourth switch is arranged between the second coupling circuit and the input end of the first-stage amplifying circuit; the fifth switch is arranged between the output end of the first-stage amplifying circuit and the input end of the second-stage amplifying circuit.

Optionally, the second coupling circuit includes a third coupling capacitor, a fourth coupling capacitor and a second coupling inductor, where the third coupling capacitor is disposed between the input end of the radio frequency power amplifier and the third switch; the branch circuit formed by the fourth coupling capacitor and the second coupling inductor is arranged between the input end of the radio frequency power amplifier and the input end of the multistage amplifying circuit.

Optionally, the gating switching circuit includes a third switch group and a third coupling circuit; the third switch group is used for responding to the first working instruction and realizing the connection between the input end of the radio frequency power amplifier and the input end of the first-stage amplifying circuit; the third coupling circuit is configured to match an input end of the first stage amplifying circuit to a third preset state.

Optionally, the third switch group includes a sixth switch, a seventh switch and an eighth switch; the sixth switch is used for realizing connection or disconnection of the third coupling circuit and the input end of the first-stage amplifying circuit; the seventh switch is arranged between the third coupling circuit and the grounding end of the radio frequency power amplifier; the eighth switch is arranged between the output end of the first-stage amplifying circuit and the output end of the radio frequency power amplifier.

Optionally, the third coupling circuit includes: a third coupling inductance, a fifth coupling capacitance, and a sixth coupling capacitance; the fifth coupling capacitor is positioned between the input end of the radio frequency power amplifier and the seventh switch; the branch circuit formed by the third coupling inductor and the sixth coupling capacitor is arranged between the input end of the radio frequency power amplifier and the input end of the first-stage amplifying circuit.

Optionally, the first working instruction includes a first switching parameter and a second switching parameter; the first switching parameter is used for the gating switching circuit to control an input signal of the radio frequency power amplifier to be amplified through the first-stage amplifying circuit or the second-stage amplifying circuit through the switch; the second switching parameter is used for controlling the input signal of the radio frequency power amplifier to be amplified by the multistage amplifying circuit through the switch by the gating switching circuit.

A method of implementing radio frequency signal amplification, the method being applied to the radio frequency power amplifier, wherein the radio frequency power amplifier comprises a multi-stage amplification circuit and a gating switching circuit, the multi-stage amplification circuit comprising a first stage amplification circuit and a second stage amplification circuit in cascade, the method comprising:

When the gating switching circuit receives a first working instruction, an input signal of the radio frequency power amplifier is subjected to signal amplification through a first-stage amplifying circuit or a second-stage amplifying circuit by means of switch control;

when the gating switching circuit receives a second working instruction, the gating switching circuit enables an input signal of the radio frequency power amplifier to be subjected to signal amplification through the multistage amplifying circuit through switch control.

The radio frequency power amplifier provided by the embodiment of the application comprises a multi-stage amplifying circuit and a gating switching circuit, wherein the multi-stage amplifying circuit comprises a first-stage amplifying circuit and a second-stage amplifying circuit which are cascaded, and the gating switching circuit is used for enabling an input signal of the radio frequency power amplifier to be amplified through the first-stage amplifying circuit or the second-stage amplifying circuit through switch control when a first working instruction is received; and when receiving a second working instruction, the input signal of the radio frequency power amplifier is subjected to signal amplification through the multistage amplifying circuit by means of switch control.

The radio frequency power amplifier and the method for realizing the radio frequency signal amplification can realize the separate control of the working states of the first-stage amplifying circuit and the second-stage amplifying circuit in the radio frequency power amplifier when the radio frequency power amplifier receives the first working instruction and the second working instruction under the condition that no additional amplifying device is added, thereby reducing the nonlinearity degree and the circuit complexity of the radio frequency power amplifier.

Drawings

Fig. 1 is a schematic diagram of a related art radio frequency Power Amplifier (PA) with a two-stage amplifying circuit;

fig. 2 is a schematic diagram of nonlinear gain when a PA having a two-stage amplifying circuit is in a Low Power Mode (LPM) operation state in the related art;

fig. 3 is a schematic diagram of a PA circuit structure with a two-stage amplifying circuit in the related art;

fig. 4 is a schematic circuit diagram of a first rf power amplifier according to an embodiment of the present application;

fig. 5 is a schematic diagram of a circuit structure of a second rf power amplifier according to an embodiment of the present application;

fig. 6 is a schematic diagram of a third rf power amplifier circuit according to an embodiment of the present application;

fig. 7 is a schematic diagram of an overall circuit structure of a radio frequency power amplifier according to an embodiment of the present application;

fig. 8 is a schematic diagram of an overall circuit structure of another rf power amplifier according to an embodiment of the present application;

fig. 9 is a schematic diagram of nonlinear gain of a radio frequency power amplifier according to an embodiment of the present application;

fig. 10 is a flowchart of a method for implementing radio frequency signal amplification according to an embodiment of the present application.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application.

It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.

In the signal processing process of wireless communication, a baseband signal needs to be modulated to obtain a radio frequency signal, the radio frequency signal needs to be processed by a PA to obtain a radio frequency signal with the transmitting power meeting the transmitting requirement of an antenna, and finally, the radio frequency signal with the transmitting power meeting the requirement can be sent to the antenna and sent out through the antenna.

The baseband signal is modulated to obtain a radio frequency signal, which is realized by a modulating oscillating circuit in a transmitter. The power of the radio frequency signal obtained through the processing of the modulation oscillation circuit is usually very small, and the power of the radio frequency signal is amplified through the PA, so that the radio frequency signal with the power meeting the preset requirement is finally obtained. In general, the radio frequency signal with the power meeting the preset requirement needs to be processed by a matching network and a filtering network and then transmitted through an antenna.

As known from the above wireless communication process, PA is an important component of the radio frequency front-end system in the wireless communication circuit. In practical applications, the PA is switched between two modes of operation, i.e., a High Power Mode (HPM) and an LPM, to match different modes of operation of the transmitter. The switching between the two working modes of the HPM and the LPM can be realized through the function control of the PA to the internal circuit or the control of the bias circuit.

In general, the power amplifier circuit unit in the PA mainly includes a driver stage amplifier circuit and a power stage amplifier circuit.

However, in the relative technology, in order to implement the switching of PA between two operation modes of HPM and LPM, there are two common implementations:

the first implementation scheme is as follows:

fig. 1 is a diagram showing a PA circuit configuration including a two-stage amplifier circuit. The PA circuit comprises a radio frequency input end, a radio frequency output end, a driving stage amplifying circuit, a power stage amplifying circuit and a matching network part. The radio frequency input end is used for receiving radio frequency signals; the matching network is used for realizing bandwidth or spectrum matching of the PA; the output signal of the matching network is input to the input end of the power stage amplifying circuit, is processed by the power stage amplifying circuit and is sent to the antenna through the radio frequency output end. Optionally, the input end of the driving stage amplifying circuit may further include a matching network, and for the driving stage amplifying circuit and the power stage amplifying circuit, the matching network may have different matching parameters; optionally, an output matching network may be further included at the output end of the PA; and the radio frequency output end is used for transmitting the radio frequency signal after the power is amplified to the antenna.

The driving stage amplifying circuit is generally located at the front end of the power stage amplifying circuit or the final stage amplifying circuit, and is used for amplifying the input radio frequency signal to meet the requirement of the input power of the power stage amplifying circuit (final stage amplifying circuit).

The power stage amplifying circuit is generally positioned at the tail end of the PA and is used for further amplifying the power of the radio frequency signal output by the previous stage amplifying circuit, so that the power of the radio frequency signal output by the power stage amplifying circuit meets the radiation requirement of an antenna.

In the relative technique, switching of the PA between HPM and LPM is achieved by control of the drive stage amplification circuit and the power stage amplification circuit voltage or current. For example, by reducing the voltage or current of the driving stage amplifying circuit and the power stage amplifying circuit, the operation state of the PA is switched to LPM; on the other hand, by increasing the current or voltage of the driver stage amplifying circuit and the power stage amplifying circuit, the operation state of the PA is switched to the high HPM.

The switching mode of the PA working mode has the advantages that the scheme is simple to realize, and the switching between the LPM and the HPM can be realized only by controlling the bias current or bias voltage of the driving stage amplifying circuit and the power stage amplifying circuit of the PA. However, the above scheme has the disadvantage that in the LPM mode, the gain of the PA is too high, and the PA has a high requirement for the spectral dynamic range of the output signal of the modulation oscillator, that is, the output signal of the modulation oscillator needs to have a wide spectral dynamic range, and at the same time, the rf characteristic gain of the PA becomes large, and the nonlinearity degree of the variation amplitude of the PA gain is aggravated in a specific bandwidth frequency range.

Specifically, fig. 2 is a schematic diagram of nonlinear gain when the PA having the two-stage amplifying circuit shown in fig. 1 is in the LPM state. In fig. 2, the abscissa indicates the operating frequency of the PA and the ordinate indicates the gain of the PA. The slope of the gain curve with frequency changes when the frequency bandwidth is changed within the range of f1-f2, and the slope of the gain curve at f1 is smaller than the slope at f2, that is, the slope of the amplitude curve of the PA gain increases within a certain bandwidth frequency range, that is, from f1 to f2, in the LPM mode, that is, the degree of nonlinearity is increased.

The second implementation scheme is as follows:

taking a two-stage amplification PA as an example, as shown in fig. 3, fig. 3 adds a second power stage amplifying circuit as shown in fig. 3 to the PA circuit structure with the two-stage amplifying circuit shown in fig. 1. In fig. 3, the functions of the rf input terminal, the rf output terminal, the matching network, and the driver stage amplifying circuit are the same as those of the rf input terminal, the rf output terminal, and the driver stage amplifying circuit in fig. 1, and are not described here again.

In fig. 3, the first power stage amplifying circuit is the same as the functional implementation of the PA in HPM mode in fig. 1.

In fig. 3, the second power stage amplifying circuit, typically a low gain power amplifying circuit. The power amplifier is used for amplifying the power of the radio frequency signal of the radio frequency input end of the whole PA in the LPM mode so as to meet the requirement of transmitting the signal by the antenna.

In fig. 3, the PA further includes four switches, where SW1-1 and SW1-2 are a first group of switches, and are used to implement connection and disconnection of paths among the driving stage amplifying circuit, the first power stage amplifying circuit, and the matching network, and when both SW1-1 and SW1-2 are in a closed state, by controlling other switches to be in an open state, the PA can be implemented to operate in the HPM mode; the SW2-1 and SW2-2 are a second group of switches for realizing the connection and disconnection of the paths between the second power stage amplifying circuit and the radio frequency input end and between the second power stage amplifying circuit and the radio frequency output end in the LPM mode. Alternatively, SW2-1 and SW2-2 may be selected, i.e., any one of the switches SW2-1 and SW2-2 is reserved.

For example, for the path of the second power stage amplifying circuit of the PA in the LPM mode, a matching network corresponding to the second power stage amplifying circuit may be further provided.

In fig. 3, to achieve PA switching back and forth between LPM and HPM, the first set of switches and the second set of switches cannot be closed simultaneously, i.e., SW2-1 and SW2-2 cannot be closed simultaneously when SW1-1 and SW1-2 are closed. Illustratively, when SW1-1 and SW1-2 are closed and SW2-1 and SW2-2 are open, the path between the driver stage amplifying circuit and the first power stage amplifying circuit is in communication, when the PA is operating in HPM mode; when the SW2-1 and SW2-2 are closed and the SW1-1 and SW1-2 are opened, the second power stage amplifying circuit is in communication with the path between the RF input and the RF output, and the PA is operated in the LPM mode.

The scheme has the advantages that the problem that the gain of the two-stage PA shown in the figure 1 is too high in the LPM mode can be solved, and the working efficiency of the PA can be further improved. However, in this scheme, a separate one-way power stage amplifying circuit needs to be added, and thus the complexity of the circuit implementation of the entire PA increases, and the area of the PA chip increases, resulting in an increase in the cost of the PA.

In view of the drawbacks of the above two solutions, an embodiment of the present application provides a radio frequency power amplifier 1, as shown in fig. 4. The radio frequency power amplifier 1 provided by the embodiment of the application comprises a multi-stage amplifying circuit 11 and a gating switching circuit 12, wherein the multi-stage amplifying circuit 11 comprises a first-stage amplifying circuit 111 and a second-stage amplifying circuit 112 which are cascaded, the gating switching circuit 12 is used for amplifying an input signal of the radio frequency power amplifier 1 through the first-stage amplifying circuit 111 or the second-stage amplifying circuit 112 through switch control when a first working instruction is received, and the gating switching circuit 12 is also used for amplifying the input signal of the radio frequency power amplifier 1 through the multi-stage amplifying circuit 11 through switch control when a second working instruction is received.

The gate switching circuit 12 is connected to the control input terminal of the rf power amplifier 1, the first stage amplifying circuit 111, and the second stage amplifying circuit 112, respectively. A first end of the gating switching circuit 12 is connected with the input end of the radio frequency power amplifier 1; a second end of the gating switching circuit 12 is connected to an output end of the first-stage amplifying circuit 111; a third terminal of the gate switching circuit 12 is connected to an input terminal of the first-stage amplification circuit 111; the fourth terminal of the gating switching circuit 12 is connected to the input terminal of the second stage amplifying circuit 112; optionally, the gate switching circuit 12 may also be connected to an output terminal of the second stage amplifying circuit 112 (not shown in fig. 4).

The first-stage amplification circuit 111 may be an intermediate-stage amplification circuit.

In one embodiment, the first stage amplification circuit 111 may be a pre-stage amplification circuit.

In one embodiment, the first stage amplification circuit 111 may be a buffer stage amplification circuit.

In one embodiment, the first stage amplification circuit 111 may be a driver stage amplification circuit.

The second stage amplification circuit 112 may be a final stage amplification circuit.

In one embodiment, the second stage amplification circuit 112 may be a power stage amplification circuit.

The multistage amplification circuit 11 may be a cascade circuit of an intermediate stage amplification circuit and a final stage amplification circuit.

In one embodiment, the multi-stage amplifying circuit 11 may be a cascade circuit of a driving stage amplifying circuit and a power stage amplifying circuit.

In one embodiment, the multi-stage amplifying circuit 11 may be a cascade circuit of a pre-stage amplifying circuit and a power stage amplifying circuit.

The first working instruction and the second working instruction may be control instructions sent by a front-stage circuit of the radio frequency power amplifier 1.

In one embodiment, the first working order and the second working order may be control orders sent by the transmitter to the control input of the radio frequency power amplifier 1.

In one embodiment, the first and second operating instructions may be commands received at the control input of the rf power amplifier 1 from the transmitter and used to control the switching state of the gating switching circuit 12 of the rf power amplifier 1.

In one embodiment, the first working instruction and the second working instruction may be high and low signals, for example, the first working instruction is high and the second working instruction is low.

In one embodiment, the first working instruction and the second working instruction may be binary control code streams sent by a front-stage circuit of the radio frequency power amplifier 1.

The gate switching circuit 12 may be a switching circuit including a plurality of switches.

In one embodiment, the gating switching circuit 12 may be a switching circuit including a plurality of switches, and the plurality of switches are respectively located in different paths.

In one embodiment, the gating switching circuit 12 may include a plurality of switches, and the switching of the operating states of the radio frequency power amplifier 1, that is, the switching and control of the operating states of the first stage amplifying circuit 111 and the second stage amplifying circuit 112, is achieved by controlling the on or off states of the plurality of switches.

In one embodiment, the gating switching circuit 12 controls the on or off state of the switch managed by the gating switching circuit when receiving the first operation command, so as to gate the connection path related to the first stage amplification circuit 111 or the second stage amplification circuit 112, so as to realize that the input signal of the radio frequency power amplifier 1 performs signal amplification on the input signal of the radio frequency power amplifier 1 through the first stage amplification circuit 111 or the second stage amplification circuit 112.

In one embodiment, the gating switching circuit 12 controls the on or off state of the switch that it manages when receiving the second operation instruction, thereby gating the connection path of the cascade amplification circuit 11 so that the input signal of the rf power amplifier 1 is signal-amplified by the multistage amplification circuit 11.

As can be seen from the above, in the rf power amplifier 1 provided in the embodiment of the present application, when the first working instruction is received, only the first-stage amplifying circuit 111 or the second-stage amplifying circuit 112 is in the working state, so that the characteristic of non-linear aggravation generated when the rf power amplifier passes through the plurality of non-linear units is relieved, and when the second working instruction is received, both the first-stage amplifying circuit 111 and the second-stage amplifying circuit 112 are in the working state, and no new amplifying circuit is added, so that the circuit complexity and cost of the rf power amplifier are not increased.

Based on the foregoing embodiments, the embodiment of the present application provides a radio frequency power amplifier 1, as shown in fig. 5, where the radio frequency power amplifier 1 includes a multi-stage amplifying circuit 11 and a gating switching circuit 12, the multi-stage amplifying circuit 11 includes a first-stage amplifying circuit 111 and a second-stage amplifying circuit 112 that are cascaded, where the gating switching circuit 12 is configured to, when receiving a first operation instruction, make an input signal of the radio frequency power amplifier 1 perform signal amplification through the first-stage amplifying circuit 111 or the second-stage amplifying circuit 112 through switch control, and the gating switching circuit 12 is also configured to, when receiving a second operation instruction, make an input signal of the radio frequency power amplifier 1 perform signal amplification through the multi-stage amplifying circuit 11 through switch control; the gating switching circuit 12 includes a first switch group and a first coupling circuit, where the first switch group is configured to respond to a first working instruction to implement connection between the input end of the radio frequency power amplifier 1 and the second stage amplifying circuit 112, and the first coupling circuit is configured to match the input end of the second stage amplifying circuit 112 to a first preset state.

In the radio frequency power amplifier 1 provided in the embodiment of the present application, at least one first switch group and at least one first coupling circuit may be included.

In one embodiment, the first switch set may include at least two switches.

In one embodiment, the input signal of the radio frequency power amplifier 1 is subjected to the power amplification process of the second stage amplifying circuit 112 by controlling the open or closed states of at least two switches in the first switch group.

In one embodiment, the first coupling circuit may include an inductance and a capacitance.

In one embodiment, the inductance and capacitance in the first coupling circuit form a matching circuit to the second stage amplifying circuit 112 in the radio frequency power amplifier 1 by controlling the open or closed state of at least two switches in the first switch group.

Illustratively, the first switch set may include a first switch S1 and a second switch S2. The first switch S1 is positioned between the first coupling circuit and the grounding end of the radio frequency power amplifier 1; and a second switch S2, configured to connect or disconnect the first coupling circuit to or from the input terminal of the second stage amplifying circuit 122.

In one embodiment, the first switch S1 and the second switch S2 may be implemented in various semiconductor processes, such as complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS), silicon-On-Insulator (SOI) CMOS, PIN diode, etc.

Illustratively, the first coupling circuit may include a first coupling capacitance C1, a second coupling capacitance C2, and a first coupling inductance L1. The first coupling capacitor C1 is disposed between the input end of the rf power amplifier 1 and the first switch S1, and a branch circuit formed by the second coupling capacitor C2 and the first coupling inductor L1 is disposed between the input end of the rf power amplifier 1 and the input end of the second stage amplifying circuit 122.

Illustratively, the first end of the first coupling capacitor C1 is connected to the radio frequency input terminal, i.e. the input terminal of the radio frequency power amplifier 1, and the second end is connected to one end of the first switch S1; the other end of the first switch S1 is connected to the ground inductance of the second-stage amplification circuit 112; one end of the second coupling capacitor C2 is connected with one end of the second switch S2, and the other end of the second coupling capacitor C2 is connected with the input end of the second-stage amplifying circuit 112; the other end of the second switch S2 is connected with the first end of the first coupling inductor L1; the second end of the first coupling inductor L1 is connected with a common node of the first coupling capacitor C1 and the radio frequency input end; the output of the second stage amplifier circuit 112 is the output of the rf power amplifier 1, i.e. the rf output in fig. 5.

Specifically, as shown in fig. 5, the second coupling capacitor C2 can realize a function of blocking ac and dc when the first switch S1 is closed.

The gating switching circuit 12 includes a second switch group for responding to a second operation command to connect the input terminal of the rf power amplifier 1 to the multi-stage amplifying circuit 11, and a second coupling circuit for matching the input terminal of the first-stage amplifying circuit 11 to a second preset state.

The second preset state may be, for example, a state in which the input terminal of the first amplifying circuit 111 is impedance-matched.

In one embodiment, the second preset state may be a state in which the spectral characteristic of the input signal at the input of the first amplifying circuit 111 matches the operating frequency band of the second amplifying circuit 111.

In the radio frequency power amplifier 1 provided in the embodiment of the present application, at least one second switch group and at least one second coupling circuit may be included.

In one embodiment, the second switch set may include at least two switches.

In one embodiment, the input signal of the radio frequency power amplifier 1 is subjected to power amplification processing by the multi-stage amplifying circuit 11 by changing the open or closed state of at least two switches in the second switch group.

In one embodiment, the second coupling circuit may include a plurality of inductors and capacitors.

In one embodiment, the inductance and capacitance in the second coupling circuit form a matching circuit to the multi-stage amplifying circuit 11 in the radio frequency power amplifier 1 by controlling the open or closed state of at least two switches in the second switch set.

The second switch group may include a third switch S3, a fourth switch S4, and a fifth switch S5, for example. The third switch S3 is located between the second coupling circuit and the ground terminal of the rf power amplifier 1; a fourth switch S4 disposed between the second coupling circuit and the input terminal of the first stage amplifying circuit 111; a fifth switch S5 disposed between the output terminal of the first stage amplification circuit 111 and the input terminal of the second stage amplification circuit 112; optionally, a matching network may be further provided between the output of the first stage amplification circuit 111 and the input of the second stage amplification circuit 112.

In one embodiment, the third switch S3, the fourth switch S4, and the fifth switch S5 may be implemented based on various semiconductor processes, such as CMOS, SOI CMOS, PIN diodes, and the like.

Illustratively, the second coupling circuit may include a third coupling capacitance C3, a fourth coupling capacitance C4, and a second coupling inductance L2. The third coupling capacitor C3 is arranged between the input end of the radio frequency power amplifier 1 and the third switch S3; the branch circuit consisting of the fourth coupling capacitor C4 and the second coupling inductor L2 is disposed between the input end of the rf power amplifier 1 and the input end of the multistage amplifying circuit 11.

Illustratively, the first end of the third switch S3 is connected to the third coupling capacitor C3, and the second end is inductively connected to the ground end of the first-stage amplifying circuit 111; the other end of the third coupling capacitor C3 is connected with the input end of the radio frequency power amplifier 1, namely the radio frequency input end in FIG. 5 and one end of the second coupling inductor L2; the first end of the fourth switch S4 is connected with the second coupling inductor L2, and the second end of the fourth switch S4 is connected with the fourth coupling capacitor C4; the other end of the second coupling inductor L2 is connected to the third coupling capacitor C3 and the input end of the rf power amplifier 1, i.e. the rf input end in fig. 5; the other end of the fourth coupling capacitor C4 is connected with the input end of the first-stage amplifying circuit 111; the first end of the fifth switch S5 is connected with the matching network of the output end of the first-stage amplifying circuit 111, and the second end of the fifth switch S5 is connected with the input end of the second-stage amplifying circuit 112; the output of the second stage amplifier circuit 112 is the output of the rf power amplifier 1, i.e. the rf output in fig. 5. The third capacitor C1 and the first capacitor C3 may be the same capacitor; the first inductor L1 and the second inductor L2 may be the same inductor.

Specifically, after the first switch S1 and the second switch S2 are closed, a signal loop is formed between the input terminal of the rf power amplifier 1 and the input terminal and the ground terminal of the second-stage amplifying circuit 112, while the other switches remain open. The first coupling capacitor C1 and the first coupling inductor L1 form a high-pass filter circuit, and before the radio frequency signal is input to the input end of the radio frequency power amplifier 1, the signal is amplified by the second-stage amplifying circuit 112 after the input of the high-pass filter circuit is matched.

That is, in the circuit diagram of the radio frequency power amplifier 1 shown in fig. 5, after the radio frequency power amplifier 1 receives the first operation instruction, the gate switching circuit 12 controls the first switch S1 and the second switch S2 to be closed, and controls the second-stage amplifying circuit 112 to be in an operation state under the condition that the other switches are kept in an open state, the first-stage amplifying circuit 111 is not set with a bias voltage or a current, and the first-stage amplifying circuit is bypassed.

The first preset state may be, for example, a state in which the input terminal of the second-stage amplifying circuit 112 is impedance-matched.

In one embodiment, the first preset state may be a state in which the spectral characteristic of the input signal at the input end of the second-stage amplifying circuit 112 matches the operating frequency band of the second-stage amplifying circuit 112.

Illustratively, after the rf power amplifier 1 receives the first operating command, the gating switching circuit controls the first switch S1 and the second switch S2 to be closed, thereby controlling the second-stage amplifying circuit 112 to enter an operating state matching the first operating command. Alternatively, the operating state that matches the first operating instruction may be an operating state of the LPM mode.

In one embodiment, the first coupling capacitor C1, the second coupling capacitor C2 and the first coupling inductor L1 in the radio frequency power amplifier 1 are all adjustable, so that the bias voltage or bias current of the second stage amplifying circuit 112 in the radio frequency power amplifier 1 can be realized, and flexible adjustment can be performed according to the actual requirements of the front stage circuit and the rear stage circuit.

As shown in fig. 5, when the rf power amplifier 1 receives the second operation instruction from the pre-stage circuit, the gating switching circuit 12 controls the third switch S3, the fourth switch S4, and the fifth switch S5 in the second switch group to switch from the open state to the closed state, and controls the other switches to keep the open state, so that the rf signal is input to the input terminal of the first stage amplifying circuit 111 of the rf power amplifier 1 through the branch circuit formed by the second coupling inductor L2, the fourth switch S4, and the fourth coupling capacitor C4, and the branch circuit formed by the third coupling capacitor C3 and the third switch S3 forms the ground loop portion of the first stage amplifying circuit 111. The rf signal output from the first stage amplification circuit 111 and subjected to the first stage amplification is input to the input terminal of the second stage amplification circuit 112 through the fifth switch, and is processed by the second stage amplification circuit 112 and output to the rf output terminal.

In fig. 5, when the rf power amplifier 1 receives the second operating instruction, the third switch S3, the fourth switch S4, and the fifth switch S5 in the rf power amplifier 1 are switched from the open state to the closed state, and the second coupling inductor L2 and the fourth coupling capacitor C4 form a matching circuit of the first stage amplifying circuit 111 in a high-pass filtering mode under the condition that other switches are kept in the open state, so that the impedance of the input end of the first stage amplifying circuit 111 can be matched to a preset impedance, for example, 50 ohms. At this time, the rf power amplifier 1 sequentially processes the rf signal inputted thereto through the first stage amplifying circuit 111 and the second stage amplifying circuit 112, and finally obtains an rf signal with a power level satisfying the antenna transmission requirement.

In one embodiment, the third coupling capacitor C3, the fourth coupling capacitor C4 and the second coupling inductor L2 in the radio frequency power amplifier 1 are all adjustable, so that the bias voltage or bias current of the radio frequency power amplifier 1 can be flexibly adjusted based on the change of the front stage circuit and the change of the antenna transmitting power.

In one implementation, the multi-stage amplifying circuit 11 and the circuit structure between the second coupling circuit and the second switch group provided by the embodiment of the present application may be cascaded, so that a radio frequency power amplifier including at least four stages of amplifying circuits may be implemented.

In one implementation manner, the circuit structures between the multistage amplifying circuit 11 and the second coupling circuit and between the multistage amplifying circuit 11 and the second switch group provided in the embodiment of the present application may be independent circuit units, and may be freely combined to obtain a radio frequency power amplifier including an N-stage amplifying circuit, where N is an integer greater than or equal to 3.

The radio frequency power amplifier 1 provided by the embodiment of the application comprises a multi-stage amplifying circuit 11 and a gating switching circuit 12, wherein the multi-stage amplifying circuit 11 comprises a first-stage amplifying circuit 111 and a second-stage amplifying circuit 112 which are cascaded, the gating switching circuit 12 is used for enabling an input signal of the radio frequency power amplifier 1 to pass through the first-stage amplifying circuit 111 and the second-stage amplifying circuit 112 through switch control when a first working instruction is received, and the gating switching circuit 12 is also used for enabling the input signal of the radio frequency power amplifier 1 to be subjected to signal amplification through the multi-stage amplifying circuit 11 through switch control when a second working instruction is received; the gating switching circuit 12 includes a first switch group and a first coupling circuit, where the first switch group is configured to respond to a first working instruction to implement connection between an input end of the radio frequency power amplifier 1 and the second stage amplifying circuit 112, and the first coupling circuit is configured to match an input end of the second stage amplifying circuit 112 to a first preset state; the gating switching circuit 12 includes a second switch group and a second coupling circuit, where the second switch group is configured to respond to a second working instruction to implement connection between the input terminal of the radio frequency power amplifier 1 and the multi-stage amplifying circuit 11, and the second coupling circuit is configured to match the input terminal of the first-stage amplifying circuit 111 to a second preset state.

Therefore, based on the first working instruction and the second working instruction, the radio frequency power amplifier 1 provided in the embodiment of the present application can make the input end of the second amplifying stage circuit 112 stably receive the radio frequency signal input by the radio frequency power amplifier 1 in a matched state or make the input end of the multistage amplifying circuit 11 stably receive the radio frequency signal input by the radio frequency power amplifier 1 in a matched state by controlling the states of the switches in the first switch group and the second switch group in the gating switching circuit 12. Therefore, the radio frequency power amplifier 1 provided by the embodiment of the application can stably amplify the input signal in different working modes under the conditions of not changing the whole structure, not increasing the complexity of the circuit and not increasing the additional power amplifying circuit, thereby reducing the risks of low processing efficiency and non-linear aggravation of gain of the radio frequency power amplifier caused by amplifying the input signal by using the two-stage amplifying circuit. And no complex circuit layout is required, thereby reducing the risk of non-linearities being exacerbated in the processing of the radio frequency signals.

Based on the foregoing embodiments, the embodiment of the present application provides a radio frequency power amplifier 1, as shown in fig. 6, where the radio frequency power amplifier 1 includes a multi-stage amplifying circuit 11 and a gating switching circuit 12, the multi-stage amplifying circuit 11 includes a first-stage amplifying circuit 111 and a second-stage amplifying circuit 112 that are cascaded, where the gating switching circuit 12 is configured to, when receiving a first operation instruction, make an input signal of the radio frequency power amplifier 1 pass through the first-stage amplifying circuit 111 or the second-stage amplifying circuit 112 through switch control, and the gating switching circuit 12 is further configured to, when receiving a second operation instruction, make an input signal of the radio frequency power amplifier 1 perform signal amplification through the multi-stage amplifying circuit 11 through switch control; the gating switching circuit 12 comprises a third switch group and a third coupling circuit, wherein the third switch group is used for responding to the first working instruction and realizing the connection between the input end of the radio frequency power amplifier 1 and the input end of the first-stage amplifying circuit 111; and a third coupling circuit for matching the input terminal of the first stage amplification circuit 111 to a third preset state.

The third preset state may be, for example, a state in which the input terminal of the first amplifying circuit 111 is impedance-matched.

In one embodiment, the third preset state may be a state in which the spectral characteristic of the input signal at the input end of the first amplifying circuit 111 is matched with the operating frequency band of the first amplifying circuit 111.

In one embodiment, the third preset state may be a state in which the characteristic parameter of the input signal at the input end of the first amplifying circuit 111 is matched with both the impedance and the frequency band of the first amplifying circuit 111.

The second operation instruction may be an instruction for controlling the rf power amplifier 1 to switch the operation state of the rf power amplifier 1 to the LPM.

In the radio frequency power amplifier 1 provided in the embodiment of the present application, at least one third switch group and at least one third coupling circuit may be included.

In one embodiment, the third switch set may include at least two switches.

In one embodiment, the input signal of the radio frequency power amplifier 1 is subjected to power amplification processing by the first-stage amplifying circuit 111 by changing the open or closed state of at least two switches in the third switch group.

In one embodiment, the third coupling circuit may include a plurality of inductors and capacitors.

In one embodiment, the inductance and capacitance in the third coupling circuit form a matching circuit to the first stage amplification circuit 111 in the radio frequency power amplifier 1 by controlling the open or closed state of at least two switches in the third switch group.

Illustratively, as shown in fig. 6, the third switch group includes a sixth switch S6, a seventh switch S7, and an eighth switch S8, where the sixth switch S6 is configured to connect or disconnect the third coupling circuit from the input terminal of the first stage amplifying circuit 111; the seventh switch S7 is arranged between the third coupling circuit and the grounding end of the radio frequency power amplifier 1; the eighth switch S8 is disposed between the output end of the first stage amplifying circuit 111 and the rf output end of the rf power amplifier 1.

In one embodiment, the sixth switch S6, the seventh switch S7, and the eighth switch S8 may be implemented using various semiconductor processes, such as CMOS, SOI CMOS, PIN diodes, and the like.

Illustratively, as shown in fig. 6, the third coupling circuit includes a third coupling inductance L3, a fifth coupling capacitance C5, and a sixth coupling capacitance C6. The fifth coupling capacitor C5 is located between the input end of the rf power amplifier 1 and the seventh switch S7; the branch circuit formed by the third coupling inductor L3 and the sixth coupling capacitor C6 is disposed between the input end of the rf power amplifier 1 and the input end of the first stage amplifying circuit 111.

Specifically, when the sixth switch S6, the seventh switch S7, and the eighth switch S8 are in the closed state, and the other switches are in the open state, the radio frequency signal input by the radio frequency input end of the radio frequency power amplifier 1 is input to the input end of the first stage amplifying circuit 111 through the branch circuit formed by the third coupling inductor L3, the sixth switch S6, and the sixth coupling capacitor C6, is subjected to the power amplifying process of the first stage amplifying circuit 111, and is output to the radio frequency output end of the radio frequency power amplifier 1 through the eighth switch S8, and finally the radio frequency signal with the power meeting the requirement of the next stage circuit is sent to the next stage circuit of the radio frequency power amplifier 1.

Specifically, the first end of the sixth switch S6 is connected to the third coupling inductor L3, and the second end is connected to the sixth coupling capacitor C6; the other end of the third coupling inductor L3 is connected with the radio frequency input end of the radio frequency power amplifier 1 and the fifth coupling capacitor C5; the other end of the fifth coupling capacitor C5 is connected with a seventh switch S7; the other end of the sixth coupling capacitor C6 is connected with the input end of the first-stage amplifying circuit 111; the other end of the seventh switch S7 is connected to the ground inductance of the first-stage amplification circuit 111; the eighth switch S8 has a first terminal connected to the output terminal of the first stage amplification circuit 111, and a second terminal connected to the output terminal of the rf power amplifier 1, i.e., the rf output terminal in fig. 6.

Illustratively, in fig. 6, a ninth switch S9 may be further disposed between the first stage amplifying circuit 111 and the second stage amplifying circuit 112, where a first end of the ninth switch S9 is connected to an output terminal of the first stage amplifying circuit 111, or a matching network of the output terminal of the first stage amplifying circuit 111, and a second end is connected to an input terminal of the second stage amplifying circuit 112; the output of the second stage amplifier 112 is connected to the output of the radio frequency power amplifier 1, i.e. the radio frequency output. Upon receiving the second operation instruction, the gating switching circuit 2 may control the ninth switch S9 to be in an off state, so that the output signal of the first stage amplifying circuit 111 is output to the radio frequency output terminal of the radio frequency power amplifier 1 via the eighth switch S8.

When the rf power amplifier 1 receives the second operation instruction, the gate switching circuit 2 of the rf power amplifier 1 controls the sixth switch S6, the seventh switch S7, and the eighth switch S8 in the third switch group to switch from the open state to the closed state, and the other switches remain in the open state, so that the first stage amplifying circuit 111 of the rf power amplifier 1 is in the operating state, and the power amplifying process of the rf power amplifier 1 on the input signal can be implemented.

In one embodiment, when the rf power amplifier 1 receives the first operation instruction, the gate switching circuit 2 of the rf power amplifier 1 controls the sixth switch S6, the ninth switch S9, and the seventh switch S7 to switch to the closed state, and the other switches remain in the open state, so that the first stage amplifying circuit 111 and the second stage amplifying circuit of the rf power amplifier 1 are in the operation state, and the power amplifying process of the input rf signal can be implemented.

In one embodiment, the third switch group, the third coupling circuit and the first stage amplifying circuit 111 in the radio frequency power amplifier 1 may be used alone, or may be cascaded to achieve the purpose of performing multistage amplification processing on the radio frequency signal.

The radio frequency power amplifier 1 provided by the embodiment of the application comprises: the multi-stage amplification circuit 11 comprises a first-stage amplification circuit 111 and a second-stage amplification circuit 112 which are cascaded, wherein the gating switching circuit 12 is used for enabling an input signal of the radio-frequency power amplifier 1 to pass through the first-stage amplification circuit 111 and the second-stage amplification circuit 112 through switch control when a first working instruction is received, and the gating switching circuit 12 is also used for enabling the input signal of the radio-frequency power amplifier 1 to pass through the multi-stage amplification circuit 11 through switch control when a second working instruction is received; the gating switching circuit 12 comprises a third switch group and a third coupling circuit, wherein the third switch group is used for responding to the first working instruction and realizing the connection between the input end of the radio frequency power amplifier 1 and the input end of the first-stage amplifying circuit 111; and a third coupling circuit for matching the input terminal of the first stage amplification circuit 111 to a third preset state.

Thus, the rf power amplifier 1 provided in the embodiment of the present application can implement the process of amplifying the power of the input signal by using only the first stage amplifying circuit 111 of the rf power amplifier 1 by controlling the gate switching circuit 12 without changing the overall circuit structure of the rf power amplifier 1. Therefore, when the radio frequency power amplifier 1 provided by the embodiment of the application is used for realizing the LPM working mode, the problem of nonlinear deterioration of signal gain along with the change of frequency spectrum can be improved in the process of processing radio frequency signals.

Based on the foregoing embodiments, the embodiment of the present application provides a radio frequency power amplifier 1, where the radio frequency power amplifier 1 includes a multi-stage amplifying circuit 11 and a gating switching circuit 12, the multi-stage amplifying circuit 11 includes a first-stage amplifying circuit 111 and a second-stage amplifying circuit 112 that are cascaded, and the gating switching circuit 12 is configured to, when a first operation instruction is received, make an input signal of the radio frequency power amplifier 1 pass through the first-stage amplifying circuit 111 and the second-stage amplifying circuit 112 through switch control, and the gating switching circuit 12 is further configured to, when a second operation instruction is received, make an input signal of the radio frequency power amplifier 1 perform signal amplification through the multi-stage amplifying circuit 11 through switch control. The first working instruction comprises a first switching parameter and a second switching parameter; the first switching parameter is used for controlling an input signal of the radio frequency power amplifier 1 to be amplified by the first-stage amplifying circuit or the second-stage amplifying circuit through a switch by the gating switching circuit; and the second switching parameter is used for controlling the input signal of the radio frequency power amplifier 1 to be amplified by the multistage amplifying circuit through the switch by the gating switching circuit.

Specifically, the first working instruction and the second working instruction may be sent to the radio frequency power amplifier 1 by the pre-stage circuit.

In one embodiment, the first and second operating instructions may be operating instructions sent by the transmitter to the radio frequency power amplifier 1.

In one embodiment, the first working instruction and the second working instruction may be working instructions sent to the rf power amplifier 1 in advance according to a pre-stage circuit requirement and a post-stage circuit requirement of the rf power amplifier 1.

In one embodiment, the first operation command may be an operation command for controlling the operation state of the radio frequency power amplifier 1 to be LPM.

In one embodiment, the second operation command may be an operation command for controlling the operation state of the rf power amplifier 1 to be HPM.

Specifically, fig. 7 is a general circuit configuration diagram of the radio frequency power amplifier 1 according to the embodiment of the present application. In fig. 7, the amplifying circuit P1 and the amplifying circuit P2 are included, and further includes capacitors C11, C21, C31, an inductance L11, and switches SW3-1, SW3-2, SW4-1, SW4-2, SW4-3, and SW4-4, which may further include a matching network, for example.

Specifically, as shown in fig. 7, a first end of the capacitor C11 is connected to the rf input terminal and the inductor L11, and a second end is connected to the switch SW4-1 and the switch SW4-3, respectively; the other end of the inductor L11 is connected with a switch SW3-1 and a switch SW 4-2; the other end of the switch SW4-1 is connected with the grounding inductance of the amplifying circuit P2; the other end of the switch SW3-1 is connected with the capacitor C31; the other end of the capacitor C31 is connected with the input end of the amplifying circuit P1; the output end of the amplifying circuit P1 is respectively connected with the switch SW4-3 and the matching network; the other end of the switch SW4-3 is connected with the capacitor C11 and the switch SW 4-1; the output end of the amplifying circuit P2 is also connected with the radio frequency output end.

The input end of the amplifying circuit P2 is respectively connected with the switch SW3-2 and the capacitor C21; the other end of the capacitor C21 is connected with the other end of the switch SW 4-2; the other end of the switch SW3-2 is connected with the output end of the matching network of the amplifying circuit P1; the input of the matching network is connected to the output of the amplifying circuit P1.

When the rf power amplifier receives the first operating instruction, if the first switching parameter in the first operating instruction indicates that the current rf power amplifier needs to process the rf signal with the amplifying circuit P2, the gating switching circuit controls the switches SW4-1 and SW4-2 to be closed, and the other switches remain open, and at this time, the amplifying circuit P2 may amplify the rf signal processed by the high-pass filter circuit composed of the inductor L11 and the capacitor C11 and output the rf signal to the rf output terminal.

When the rf power amplifier receives the first operating instruction, if the first switching parameter in the first operating instruction indicates that the current rf power amplifier needs to process the rf signal with the amplifying circuit P1, the gating switching circuit controls the switches SW3-1, SW4-3, SW4-4 to be closed, and the other switches remain open, at this time, the amplifying circuit P1 may receive the rf signal input by the rf power amplifier via the high-pass filter circuit formed by the inductor L11 and the capacitor C11, and implement the amplifying process on the rf signal power, and then send the signal to the rf output terminal via the switch SW 4-4.

Illustratively, when the rf power amplifier receives the second operation instruction, the gating switching circuit controls the switches SW3-1 and SW4-3 to be in a closed state, so that the amplifying circuit P1 can be in an operating state to process the rf signal input by the rf input terminal; meanwhile, the gating switching circuit controls the switch SW3-2 to be in a closed state, so that an output circuit of the amplifying circuit P1 can be input into the amplifying circuit P2 through the matching network and is output to the radio frequency output end through the processing of the amplifying circuit P2.

Based on the foregoing embodiments, another overall circuit of the rf power amplifier is provided in an embodiment of the present application, as shown in fig. 8. It should be noted that, although the circuit structure is different between the overall circuit of the rf power amplifier shown in fig. 8 and the overall circuit of the rf power amplifier shown in fig. 7, the implementation of the functions is the same, that is, in fig. 8, by controlling the on or off states of the respective switches, a function of amplifying the rf signal input to the rf input terminal in a single stage or in multiple stages may be implemented.

Illustratively, in the overall circuit diagram of the radio frequency power amplifier shown in fig. 8, the radio frequency power amplifier includes an amplifying circuit P1, an amplifying circuit P2, inductances L101, L102, capacitances C101, C102, switches S101, S102, S103, S104, and S105, and further includes a first matching network and a second matching network. Wherein the switch S103 and the switch S105 may be single pole double throw switches, respectively.

In the circuit structure diagram of the radio frequency power amplifier shown in fig. 8, a first end of an inductor L101 is connected with a radio frequency input end and a capacitor C101 respectively, a second end is connected with a switch S101, the other end of the switch S101 is connected with a capacitor C102, the other end of the capacitor C101 is connected with a switch S102 and a switch S104, and the other end of the switch S102 is connected with a grounding inductance of an amplifying circuit P1; the other end of the switch S104 is connected with the inductor L102; the other end of the inductor L102 is connected to a second matching network.

The other end of the capacitor C102 is connected with the input end of the amplifying circuit P1, the output end of the amplifying circuit P1 is connected with the switch S103, and the other end of the switch S103 is provided with a first matching network and a second matching network. The other end of the first matching network is provided with a switch S105, the other end of the second matching network is connected with the input end of the amplifying circuit P2, the output end of the amplifying circuit P2 is provided with the switch S105, and the other end of the switch S105 is connected with the radio frequency output end of the radio frequency power amplifier.

For example, if the overall rf power amplifier circuit shown in fig. 8 receives the first operating instruction, and if the first operating instruction is used to instruct the amplifying circuit P1 to amplify the rf signal input by the rf input end, the gating switching circuit controls the switches S101 and S102 to be in a closed state, the switches S103 and S105 are respectively connected with the first matching network, and the other switches are all in an open state, at this time, the rf signal input by the rf input end is input to the input end of the amplifying circuit P1 through the high-pass filter formed by the inductor L101 and the capacitor C101, and is output to the rf output end through the output end of the amplifying circuit P1, the switch S103 and the first matching network and through the switch S105 after being processed by the amplifying circuit P1.

For example, if the overall circuit diagram of the rf power amplifier shown in fig. 8 receives the first working instruction, and if the first working instruction is used to instruct the amplifying circuit P2 to amplify the rf signal input by the rf input end, the gating switching circuit controls the switch S104 to be in a closed state, the switch S105 is connected with the output end of the amplifying circuit P2, and the other switches are all in an open state, at this time, the rf signal input by the rf input end is input to the input end of the amplifying circuit P2 through the high-pass filter formed by the inductor L102 and the capacitor C101, and is output to the rf output end through the switch S105 by the processing of the amplifying circuit P2 and the second matching network.

For example, if the overall circuit diagram of the rf power amplifier shown in fig. 8 receives the second operation instruction, the gating switching circuit controls the switch S101 and the switch S102 to be in a closed state, the switch S103 is connected to the second matching network, the switch S105 is connected to the output end of the amplifying circuit P2, and the other switches are all in an open state, at this time, the rf signal input by the rf input end is input to the input end of the amplifying circuit P1 through the high-pass filter formed by the inductor L101 and the capacitor C101, is processed by the amplifying circuit P1, is input to the input end of the amplifying circuit P2 through the output end of the amplifying circuit P1 and the second matching network, and is output to the rf output end through the output end of the amplifying circuit P2 and the switch S105.

As shown in fig. 9, for example. In fig. 9, the horizontal direction is a frequency axis, the vertical direction is a gain variation axis of the rf power amplifier 1, wherein, in a two-dimensional coordinate of frequency-gain, a first curve appearing in the gain variation direction is a curve of gain variation with frequency when the rf power amplifier 1 receives a first operation instruction, where the first stage amplification circuit 111 or the second stage amplification circuit 112 of the rf power amplifier 1 is in an operating state, and the second curve is a curve of gain variation with frequency when the rf power amplifier operates in the LPM mode when the second scheme is adopted in the related art. As can be seen from fig. 9, from the interval of f1-f2, the slope of the first curve is gentler than that of the second curve, and the gain is also reduced, so that the dynamic power output range of the radio frequency power amplifier can be improved.

The rf power amplifiers provided in fig. 7 and 8 of the embodiments of the present application may be used to control the switches respectively in actual use, and may also be cascaded with a plurality of rf power amplifiers to implement multi-stage amplification of the rf signal.

In the radio frequency power amplifier shown in fig. 7, a matching network may be further provided, including a first matching network corresponding to the amplifying circuit P1 and a second matching network corresponding to the amplifying circuit P2.

In one embodiment, the matching network may include an input matching network for each amplifying circuit and may also include an output matching network for each amplifying circuit.

The radio frequency power amplifier 1 provided by the embodiment of the application comprises a multi-stage amplifying circuit 11 and a gating switching circuit 12, wherein the multi-stage amplifying circuit 11 comprises a first-stage amplifying circuit 111 and a second-stage amplifying circuit 112 which are cascaded, the gating switching circuit 12 is used for enabling an input signal of the radio frequency power amplifier 1 to pass through the first-stage amplifying circuit 111 or the second-stage amplifying circuit 112 through switch control when a first working instruction is received, and the gating switching circuit 12 is also used for enabling the input signal of the radio frequency power amplifier 1 to be subjected to signal amplification through the multi-stage amplifying circuit 11 through switch control when a second working instruction is received. The first working instruction comprises a first switching parameter and a second switching parameter; the first switching parameter is used for controlling an input signal of the radio frequency power amplifier to be amplified by the first-stage amplifying circuit or the second-stage amplifying circuit through a switch by the gating switching circuit; and the second switching parameter is used for controlling the input signal of the radio frequency power amplifier 1 to be amplified by the multistage amplifying circuit through the switch by the gating switching circuit.

Therefore, the radio frequency power amplifier 1 provided by the embodiment of the application can be switched to different working states when receiving different working instructions under the condition of not changing the whole structure of the circuit. Therefore, the radio frequency power amplifier 1 provided by the embodiment of the application can realize the separate control of the first-stage amplifying circuit and the second-stage amplifying circuit without adding additional power amplifying devices, and can reduce the complexity of the radio frequency power amplifier circuit.

Based on the foregoing embodiments, the embodiments of the present application provide a method for implementing radio frequency signal amplification, which may be implemented by the radio frequency power amplifier 1 provided in the foregoing embodiments, where the radio frequency power amplifier 1 includes a multi-stage amplifying circuit and a gating switching circuit, and the multi-stage amplifying circuit includes a first stage amplifying circuit and a second stage amplifying circuit that are cascaded. As shown in fig. 10, the method includes:

and step 101, when the gating switching circuit receives a first working instruction, the gating switching circuit enables an input signal of the radio frequency power amplifier to be subjected to signal amplification through the first-stage amplifying circuit or the second-stage amplifying circuit through switch control.

Step 102, when the gating switching circuit receives a second working instruction, the gating switching circuit enables an input signal of the radio frequency power amplifier to be amplified through the multistage amplifying circuit through switch control.

Specifically, a radio frequency power amplifier circuit structure for implementing the method for implementing radio frequency signal amplification provided by the embodiment of the application is shown in fig. 7 or fig. 8.

According to the method for realizing the radio frequency signal amplification, when the gating switching circuit of the radio frequency power amplifier receives the first working instruction, the input signal of the radio frequency power amplifier is subjected to signal amplification through the first-stage amplifying circuit or the second-stage amplifying circuit through switch control; when the gating switching circuit of the radio frequency power amplifier receives a second working instruction, the input signal of the radio frequency power amplifier is subjected to signal amplification through the multistage amplifying circuit by means of switch control.

According to the method for realizing the radio frequency signal amplification, provided by the embodiment of the application, under the condition that the circuit structure of the radio frequency power amplifier is kept unchanged, the radio frequency power amplifier realizes that the working states of the amplifying circuits are controlled separately based on different working instructions, so that the switching of the working states of the radio frequency power amplifier is realized on the premise that no additional amplifying devices are added, and the complexity of the radio frequency power amplifier circuit is reduced.

The foregoing description is only of the preferred embodiments of the present invention, and is not intended to limit the scope of the invention, but rather is intended to cover any equivalents of the structures or equivalent processes disclosed herein or in the alternative, which may be employed directly or indirectly in other related arts.

Claims

1. A radio frequency power amplifier is characterized in that the radio frequency power amplifier comprises a multi-stage amplifying circuit and a gating switching circuit, the multi-stage amplifying circuit comprises a first-stage amplifying circuit and a second-stage amplifying circuit which are cascaded, wherein,

the gating switching circuit is used for enabling an input signal of the radio frequency power amplifier to be subjected to signal amplification through the first-stage amplifying circuit or the second-stage amplifying circuit through switch control when a first working instruction is received; when receiving a second working instruction, the input signal of the radio frequency power amplifier is subjected to signal amplification through the multistage amplifying circuit by means of switch control;

the gating switching circuit comprises a first coupling circuit and a second coupling circuit; the first coupling circuit is used for matching the input end of the second-stage amplifying circuit to a first preset state, and the second coupling circuit is used for matching the input end of the first-stage amplifying circuit to a second preset state.

2. The radio frequency power amplifier of claim 1, wherein the gating switching circuit comprises a first switch bank; the first switch group is used for responding to the first working instruction and realizing the connection between the input end of the radio frequency power amplifier and the second-stage amplifying circuit.

3. The radio frequency power amplifier of claim 2, wherein the first switch set comprises a first switch and a second switch; wherein the first switch is located between the first coupling circuit and a ground terminal of the radio frequency power amplifier; and the second switch is used for realizing connection or disconnection of the first coupling circuit and the second-stage amplifying circuit.

4. The radio frequency power amplifier of claim 3, wherein the first coupling circuit comprises a first coupling capacitance, a second coupling capacitance, and a first coupling inductance; the first coupling capacitor is arranged between the input end of the radio frequency power amplifier and the first switch; the branch circuit formed by the second coupling capacitor and the first coupling inductor is arranged between the input end of the radio frequency power amplifier and the input end of the second-stage amplifying circuit.

5. The radio frequency power amplifier of claim 1, wherein the gating switching circuit comprises a second switch group; the second switch group is used for responding to the second working instruction and realizing the connection between the input end of the radio frequency power amplifier and the multistage amplifying circuit.

6. The radio frequency power amplifier of claim 5, wherein the second switch set comprises a third switch, a fourth switch, and a fifth switch; the third switch is positioned between the second coupling circuit and the grounding end of the radio frequency power amplifier; the fourth switch is arranged between the second coupling circuit and the input end of the first-stage amplifying circuit; the fifth switch is arranged between the output end of the first-stage amplifying circuit and the input end of the second-stage amplifying circuit.

7. The rf power amplifier of claim 6, wherein the second coupling circuit comprises a third coupling capacitor, a fourth coupling capacitor, and a second coupling inductance, wherein the third coupling capacitor is disposed between the input of the rf power amplifier and the third switch; the branch circuit formed by the fourth coupling capacitor and the second coupling inductor is arranged between the input end of the radio frequency power amplifier and the input end of the multistage amplifying circuit.

8. The radio frequency power amplifier of claim 1, wherein the gating switching circuit comprises a third switch bank and a third coupling circuit; the third switch group is used for responding to the first working instruction and realizing the connection between the input end of the radio frequency power amplifier and the input end of the first-stage amplifying circuit; the third coupling circuit is configured to match an input end of the first stage amplifying circuit to a third preset state.

9. The radio frequency power amplifier of claim 8, wherein the third switch set comprises a sixth switch, a seventh switch, and an eighth switch; the sixth switch is used for realizing connection or disconnection of the third coupling circuit and the input end of the first-stage amplifying circuit; the seventh switch is arranged between the third coupling circuit and the grounding end of the radio frequency power amplifier; the eighth switch is arranged between the output end of the first-stage amplifying circuit and the output end of the radio frequency power amplifier.

10. The radio frequency power amplifier of claim 9, wherein the third coupling circuit comprises: a third coupling inductance, a fifth coupling capacitance, and a sixth coupling capacitance; the fifth coupling capacitor is positioned between the input end of the radio frequency power amplifier and the seventh switch; the branch circuit formed by the third coupling inductor and the sixth coupling capacitor is arranged between the input end of the radio frequency power amplifier and the input end of the first-stage amplifying circuit.

11. The radio frequency power amplifier of claim 1, wherein the first operating command comprises a first switching parameter and a second switching parameter; the first switching parameter is used for the gating switching circuit to control an input signal of the radio frequency power amplifier to be amplified through the first-stage amplifying circuit or the second-stage amplifying circuit through the switch; the second switching parameter is used for controlling the input signal of the radio frequency power amplifier to be amplified by the multistage amplifying circuit through the switch by the gating switching circuit.

12. A method for implementing radio frequency signal amplification, wherein the method is applied to a radio frequency power amplifier, the radio frequency power amplifier comprises a multi-stage amplifying circuit and a gating switching circuit, the multi-stage amplifying circuit comprises a first-stage amplifying circuit and a second-stage amplifying circuit which are cascaded, and the gating switching circuit comprises a first coupling circuit and a second coupling circuit, the method comprises:

When the gating switching circuit receives a second working instruction, the gating switching circuit enables an input signal of the radio frequency power amplifier to be subjected to signal amplification through the multistage amplifying circuit through switch control;

the first coupling circuit matches the input end of the second-stage amplifying circuit to a first preset state, and the second coupling circuit matches the input end of the first-stage amplifying circuit to a second preset state.