CN111641395A

CN111641395A - Radio frequency power amplifier and method for realizing radio frequency signal amplification

Info

Publication number: CN111641395A
Application number: CN202010521406.XA
Authority: CN
Inventors: 苏强; 李平
Original assignee: Smarter Microelectronics Guangzhou Co Ltd
Current assignee: Smarter Microelectronics Guangzhou Co Ltd
Priority date: 2020-06-10
Filing date: 2020-06-10
Publication date: 2020-09-08
Anticipated expiration: 2040-06-10
Also published as: CN111641395B

Abstract

The embodiment of the application discloses a radio frequency power amplifier, which comprises a multi-stage amplification circuit and a gating switching circuit, wherein the multi-stage amplification circuit comprises a first-stage amplification circuit and a second-stage amplification circuit which are cascaded, and the gating switching circuit is used for enabling an input signal of the radio frequency power amplifier to be subjected to signal amplification through the first-stage amplification circuit or the second-stage amplification circuit through switch control when a first working instruction is received; and the amplifier is used for amplifying the input signal of the radio frequency power amplifier through the multistage amplifying circuit by switch control when a second working instruction is received. The embodiment of the application also discloses a method for realizing the radio frequency signal amplification.

Description

Radio frequency power amplifier and method for realizing radio frequency signal amplification

Technical Field

The present application relates to the field of signal processing technologies, and in particular, to a radio frequency power amplifier and a method for amplifying a radio frequency signal.

Background

Before the radio frequency signal is sent to the antenna, the radio frequency power amplifier may generally implement an amplification process of the radio frequency signal through a cascaded driving stage amplification circuit and a power stage amplification circuit. In the related art, the operating state of the rf power amplifier is usually switched by setting different bias voltages for the driver stage amplifier circuit and the power stage amplifier circuit, or by adding an additional amplifier device and an additional amplifier circuit. However, in the above power amplification scheme, the non-linear characteristic of the radio frequency power amplifier may be exacerbated, or the complexity of the radio frequency power amplifier circuit may be increased.

Disclosure of Invention

In view of this, embodiments of the present application provide a radio frequency power amplifier and a method for implementing radio frequency signal amplification, which can implement separate control of the operating states of each stage of amplifying circuit in the radio frequency power amplifier without adding an additional amplifying device, thereby reducing the nonlinearity degree and circuit complexity of the radio frequency power amplifier.

The implementation scheme of the radio frequency power amplifier provided by the application is as follows:

a radio frequency power amplifier includes a multistage amplification circuit including a first stage amplification circuit and a second stage amplification circuit which are cascaded, and a gate switching circuit, wherein,

the gating switching circuit is used for enabling an input signal of the radio frequency power amplifier to be subjected to signal amplification through the first-stage amplification circuit or the second-stage amplification circuit through switch control when a first working instruction is received; and the amplifier is used for amplifying the input signal of the radio frequency power amplifier through the multistage amplifying circuit by switch control when a second working instruction is received.

Optionally, the gate switching circuit includes a first switch group and a first coupling circuit; the first switch group is used for responding to the first working instruction and realizing the connection between the input end of the radio frequency power amplifier and the second-stage amplifying circuit; the first coupling circuit is used for matching the input end of the second stage amplifying circuit to a first preset state.

Optionally, the first switch group includes a first switch and a second switch; wherein the first switch is located between the first coupling circuit and a ground terminal of the radio frequency power amplifier; and the second switch is used for realizing the connection or disconnection of the first coupling circuit and the second-stage amplifying circuit.

Optionally, the first coupling circuit includes a first coupling capacitor, a second coupling capacitor, and a first coupling inductor; the first coupling capacitor is arranged between the input end of the radio frequency power amplifier and the first switch; and a branch circuit formed by the second coupling capacitor and the first coupling inductor is arranged between the input end of the radio frequency power amplifier and the input end of the second-stage amplifying circuit.

Optionally, the gate switching circuit includes a second switch group and a second coupling circuit; the second switch group is used for responding to the second working instruction and realizing the connection between the input end of the radio frequency power amplifier and the multistage amplifying circuit; the second coupling circuit is used for matching the input end of the first-stage amplifying circuit to a second preset state.

Optionally, the second switch group includes a third switch, a fourth switch and a fifth switch; the third switch is located between the second coupling circuit and a ground terminal of the radio frequency power amplifier; the fourth switch is arranged between the second coupling circuit and the input end of the first-stage amplifying circuit; the fifth switch is arranged between the output end of the first-stage amplifying circuit and the input end of the second-stage amplifying circuit.

Optionally, the second coupling circuit includes a third coupling capacitor, a fourth coupling capacitor, and a second coupling inductor, where the third coupling capacitor is disposed between the input end of the radio frequency power amplifier and the third switch; and a branch circuit formed by the fourth coupling capacitor and the second coupling inductor is arranged between the input end of the radio frequency power amplifier and the input end of the multistage amplification circuit.

Optionally, the gate switching circuit includes a third switch group and a third coupling circuit; the third switch group is used for responding to the first working instruction and realizing the connection between the input end of the radio frequency power amplifier and the input end of the first-stage amplifying circuit; and the third coupling circuit is used for matching the input end of the first-stage amplifying circuit to a third preset state.

Optionally, the third switch group includes a sixth switch, a seventh switch and an eighth switch; the sixth switch is used for realizing connection or disconnection of the third coupling circuit and the input end of the first-stage amplifying circuit; the seventh switch is arranged between the third coupling circuit and the grounding end of the radio frequency power amplifier; the eighth switch is arranged between the output end of the first-stage amplifying circuit and the output end of the radio frequency power amplifier.

Optionally, the third coupling circuit includes: a third coupling inductor, a fifth coupling capacitor and a sixth coupling capacitor; the fifth coupling capacitor is located between the input end of the radio frequency power amplifier and the seventh switch; and a branch circuit formed by the third coupling inductor and the sixth coupling capacitor is arranged between the input end of the radio frequency power amplifier and the input end of the first-stage amplifying circuit.

Optionally, the first work instruction includes a first handover parameter and a second handover parameter; the first switching parameter is used for the gating switching circuit to control the input signal of the radio frequency power amplifier to be amplified through the first-stage amplifying circuit or the second-stage amplifying circuit through the switch; and the second switching parameter is used for controlling the input signal of the radio frequency power amplifier to carry out signal amplification through the multistage amplification circuit by the gating switching circuit through the switch.

A method for realizing radio frequency signal amplification, the method being applied to a radio frequency power amplifier, wherein the radio frequency power amplifier comprises a multi-stage amplification circuit and a gating switching circuit, the multi-stage amplification circuit comprises a first stage amplification circuit and a second stage amplification circuit which are cascaded, and the method comprises:

when the gating switching circuit receives a first working instruction, the input signal of the radio frequency power amplifier is subjected to signal amplification through a first-stage amplification circuit or a second-stage amplification circuit through switch control;

and when the gating switching circuit receives a second working instruction, the input signal of the radio frequency power amplifier is subjected to signal amplification through the multistage amplification circuit by switch control.

The radio frequency power amplifier provided by the embodiment of the application comprises a multi-stage amplifying circuit and a gating switching circuit, wherein the multi-stage amplifying circuit comprises a first-stage amplifying circuit and a second-stage amplifying circuit which are cascaded, and the gating switching circuit is used for enabling an input signal of the radio frequency power amplifier to be subjected to signal amplification through the first-stage amplifying circuit or the second-stage amplifying circuit through switch control when a first working instruction is received; and the amplifier is used for amplifying the input signal of the radio frequency power amplifier through the multistage amplifying circuit by switch control when a second working instruction is received.

According to the radio frequency power amplifier and the method for amplifying the radio frequency signal, the working states of a first-stage amplifying circuit and a second-stage amplifying circuit in the radio frequency power amplifier can be separately controlled when the radio frequency power amplifier receives a first working instruction and a second working instruction under the condition that no additional amplifying device is added, and therefore the nonlinearity degree and the circuit complexity of the radio frequency power amplifier are reduced.

Drawings

Fig. 1 is a schematic structural diagram of a Power Amplifier (PA) with a two-stage amplifying circuit in the related art;

fig. 2 is a diagram illustrating a nonlinear gain when a PA with a two-stage amplifier circuit is in a Low Power output (LPM) operating state according to a related art;

FIG. 3 is a schematic diagram of a PA circuit with a two-stage amplifier circuit according to the prior art;

fig. 4 is a schematic circuit diagram of a first rf power amplifier according to an embodiment of the present disclosure;

fig. 5 is a schematic circuit diagram of a second rf power amplifier according to an embodiment of the present disclosure;

fig. 6 is a schematic circuit diagram of a third rf power amplifier according to an embodiment of the present disclosure;

fig. 7 is a schematic diagram of an overall circuit structure of a radio frequency power amplifier according to an embodiment of the present application;

fig. 8 is a schematic diagram of an overall circuit structure of another rf power amplifier according to an embodiment of the present application;

fig. 9 is a schematic diagram illustrating a non-linear gain of an rf power amplifier according to an embodiment of the present application;

fig. 10 is a flowchart of a method for implementing radio frequency signal amplification according to an embodiment of the present application.

Detailed Description

The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.

It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

In the signal processing process of wireless communication, a baseband signal needs to be modulated to obtain a radio frequency signal, the radio frequency signal needs to be processed by a PA (power amplifier) to obtain a radio frequency signal of which the transmitting power meets the transmitting requirement of an antenna, and finally, the radio frequency signal of which the transmitting power meets the requirement can be sent to the antenna and sent out through the antenna.

The baseband signal is modulated to obtain a radio frequency signal, which is realized by a modulation oscillating circuit in a transmitter. The power of the radio frequency signal obtained by processing through the modulation oscillating circuit is usually very small, and the power of the radio frequency signal needs to be amplified through the PA, so that the radio frequency signal meeting the preset requirement of the power is finally obtained. In general, radio frequency signals with power meeting preset requirements are processed by a matching network and a filter network and then transmitted through an antenna.

As known from the above wireless communication process, the PA is an important component of the RF front-end system in the wireless communication circuit. In practical applications, the PA is switched between two operating modes, i.e., a High Power Mode (HPM) and an LPM, to match different operating modes of the transmitter. The switching between the two operating modes of the HPM and the LPM can be realized by controlling the function of the internal circuit or controlling the bias circuit by the PA.

In general, a power amplifier circuit unit in a PA mainly includes two parts, i.e., a driver stage amplifier circuit and a power stage amplifier circuit.

However, in the relative art, in order to realize the switching of the PA between the two operation modes of the HPM and the LPM, the following two general implementation schemes are used:

the first implementation scheme is as follows:

fig. 1 is a diagram showing a PA circuit configuration including a two-stage amplifier circuit. The PA circuit comprises a radio frequency input end, a radio frequency output end, a driving stage amplifying circuit, a power stage amplifying circuit and a matching network part. The radio frequency input end is used for receiving radio frequency signals; the matching network is used for realizing bandwidth or spectrum matching of the PA; the output signal of the matching network is input to the input end of the power level amplifying circuit, processed by the power level amplifying circuit and sent to the antenna through the radio frequency output end. Optionally, the input end of the driver stage amplifier circuit may further include a matching network, and for the driver stage amplifier circuit and the power stage amplifier circuit, the matching network may have different matching parameters; optionally, an output matching network may be further included at the output end of the PA; and the radio frequency output end is used for sending the radio frequency signal after the power is amplified to the antenna.

The driver stage amplifier circuit is generally located at the front end of the power stage amplifier circuit or the final stage amplifier circuit, and is used for amplifying an input radio frequency signal to meet the requirement of the input power of the power stage amplifier circuit (the final stage amplifier circuit).

The power stage amplifying circuit is generally located at the tail end of the PA, and is used for further power amplifying the radio-frequency signal output by the previous stage amplifying circuit, so that the power of the radio-frequency signal output by the power stage amplifying circuit meets the requirement of antenna radiation.

In the relative art, switching of the PA between HPM and LPM is achieved by controlling the driver stage amplifier circuit and power stage amplifier circuit voltages or currents. For example, the operating state of the PA is switched to the LPM by reducing the voltage or current of the driver stage amplifier circuit and the power stage amplifier circuit; on the other hand, the operating state of the PA is switched to the high HPM by increasing the current or voltage of the driver stage amplifier circuit and the power stage amplifier circuit.

The switching mode of the working mode of the PA has the advantages that the scheme is simple to implement, and the switching between the LPM and the HPM can be realized only by controlling the bias current or the bias voltage of the driving stage amplifying circuit and the power stage amplifying circuit of the PA. However, the above solutions have the disadvantages that the gain of the PA is too high in the LPM mode, and the PA has a high requirement on the spectral dynamic range of the output signal of the modulation oscillator circuit, that is, the output signal of the modulation oscillator circuit needs to have a wide spectral dynamic range, and at the same time, the rf characteristic gain of the PA becomes large, and the nonlinearity of the variation amplitude of the PA gain in a specific bandwidth frequency range is increased.

Specifically, fig. 2 is a schematic diagram of the nonlinear gain of the PA having the two-stage amplifier circuit shown in fig. 1 in the LPM state. In fig. 2, the abscissa is the operating frequency of the PA and the ordinate is the gain of the PA. When the frequency bandwidth is changed from f1 to f2, the slope of the gain curve changing along with the frequency also changes, and the slope of the gain curve at f1 is smaller than that at f2, that is, in the LPM mode, the slope of the amplitude curve of the change of the PA gain is increased, that is, the degree of nonlinearity is increased, within a certain bandwidth frequency range from f1 to f 2.

The second implementation scheme is as follows:

still taking a PA with two-stage amplification as an example, as shown in fig. 3, fig. 3 is a circuit configuration of the PA with two-stage amplification circuit shown in fig. 1, and is added with a second power-stage amplification circuit shown in fig. 3, which is a power-stage amplification circuit. In fig. 3, the functions of the rf input terminal, the rf output terminal, the matching network and the driver stage amplifier circuit are the same as those of the rf input terminal, the rf output terminal and the driver stage amplifier circuit in fig. 1, and are not described herein again.

In fig. 3, the first power stage amplification circuit is the same as the functional implementation of the PA in fig. 1 in HPM mode.

In fig. 3, the second power stage amplifier circuit, typically a low gain power amplifier circuit. The power amplification of the whole PA to the radio frequency signal at the radio frequency input end in the LPM mode is realized to meet the requirement of the antenna for transmitting the signal.

In fig. 3, four switches are further included, where SW1-1 and SW1-2 are a first group of switches for connecting and disconnecting the paths among the driver stage amplifier circuit, the first power stage amplifier circuit and the matching network, and when SW1-1 and SW1-2 are both in a closed state, the PA can be operated in the HPM mode by controlling the other switches to be in an open state; and the SW2-1 and the SW2-2 are a second group of switches which are used for realizing the connection and disconnection of the path between the second power stage amplifying circuit and the radio frequency input end and the radio frequency output end when the PA is in the LPM mode. Optionally, SW2-1 and SW2-2 can be either one of the other, i.e., either one of the switches SW2-1 and SW2-2 is retained.

Illustratively, for the path of the second power stage amplifying circuit of the PA in the LPM mode, a matching network corresponding to the second power stage amplifying circuit may also be provided.

In FIG. 3, to enable the PA to toggle between LPM and HPM, the first and second sets of switches cannot be closed simultaneously, i.e., SW2-1 and SW2-2 cannot be closed simultaneously while SW1-1 and SW1-2 are closed. Illustratively, when SW1-1 and SW1-2 are closed and SW2-1 and SW2-2 are opened, the path between the driver stage amplification circuit and the first power stage amplification circuit is connected while the PA is operating in HPM mode; when the SW2-1 and the SW2-2 are closed and the SW1-1 and the SW1-2 are opened, the second power stage amplifying circuit is communicated with a path between the radio frequency input end and the radio frequency output end, and the PA works in an LPM mode.

The advantage of the above scheme is that the problem of too high gain of the two-stage PA shown in fig. 1 in the LPM mode can be solved, and thus the working efficiency of the PA can be improved. However, in this scheme, a separate power stage amplification circuit needs to be added, so that the circuit implementation complexity of the whole PA is increased, and the area of the PA chip is also increased, thereby increasing the cost of the PA.

In view of the disadvantages of the above two schemes, the embodiment of the present application provides a radio frequency power amplifier 1, as shown in fig. 4. The radio frequency power amplifier 1 provided by the embodiment of the application includes a multi-stage amplification circuit 11 and a gating switching circuit 12, the multi-stage amplification circuit 11 includes a first-stage amplification circuit 111 and a second-stage amplification circuit 112 which are cascaded, wherein the gating switching circuit 12 is configured to, when receiving a first working instruction, enable an input signal of the radio frequency power amplifier 1 to perform signal amplification through the first-stage amplification circuit 111 or the second-stage amplification circuit 112 by switch control, and the gating switching circuit 12 is further configured to, when receiving a second working instruction, enable the input signal of the radio frequency power amplifier 1 to perform signal amplification through the multi-stage amplification circuit 11 by switch control.

The gate switching circuit 12 is connected to the control input terminal of the rf power amplifier 1, the first stage amplifying circuit 111 and the second stage amplifying circuit 112, respectively. The first end of the gating switching circuit 12 is connected with the input end of the radio frequency power amplifier 1; the second end of the gate switching circuit 12 is connected to the output end of the first-stage amplifying circuit 111; the third end of the gating switching circuit 12 is connected with the input end of the first-stage amplifying circuit 111; the fourth end of the gating switching circuit 12 is connected with the input end of the second-stage amplifying circuit 112; optionally, the gate switching circuit 12 may be further connected to an output terminal of the second stage amplifying circuit 112 (not shown in fig. 4).

The first-stage amplifier circuit 111 may be an intermediate-stage amplifier circuit.

In one embodiment, the first stage amplifier circuit 111 may be a pre-stage amplifier circuit.

In one embodiment, the first stage amplifier 111 may be a buffer stage amplifier.

In one embodiment, the first stage amplifier circuit 111 may be a driver stage amplifier circuit.

The second stage amplifier circuit 112 may be a final stage amplifier circuit.

In one embodiment, the second stage amplifier circuit 112 may be a power stage amplifier circuit.

The multistage amplifier circuit 11 may be a cascade circuit of an intermediate stage amplifier circuit and a final stage amplifier circuit.

In one embodiment, the multi-stage amplifier circuit 11 may be a cascade circuit of a driver stage amplifier circuit and a power stage amplifier circuit.

In one embodiment, the multi-stage amplifier circuit 11 may be a cascade circuit of a pre-stage amplifier circuit and a power stage amplifier circuit.

The first operating command and the second operating command may be control commands sent by a preceding stage circuit of the radio frequency power amplifier 1.

In one embodiment, the first operation command and the second operation command may be control commands sent by the transmitter to the control input of the rf power amplifier 1.

In one embodiment, the first operation command and the second operation command may be commands received from the transmitter at a control input of the rf power amplifier 1 and used for controlling the switch state of the gate switching circuit 12 of the rf power amplifier 1.

In one embodiment, the first operation command and the second operation command may be a signal high or low level, for example, the first operation command is a high level, and the second operation command is a low level.

In an embodiment, the first operating instruction and the second operating instruction may be binary control code streams sent by a preceding stage circuit of the radio frequency power amplifier 1.

The gate switching circuit 12 may be a switching circuit including a plurality of switches.

In one embodiment, the gate switching circuit 12 may be a switching circuit including a plurality of switches, and the plurality of switches are respectively located in different paths.

In one embodiment, the gate switching circuit 12 may include a plurality of switches, and the switching of the operating state of the radio frequency power amplifier 1, that is, the switching and controlling of the operating states of the first-stage amplification circuit 111 and the second-stage amplification circuit 112, are realized by controlling the closed or open states of the plurality of switches.

In one embodiment, the gating switching circuit 12, upon receiving the first operating command, controls the on or off state of the switch it manages, thereby gating the connection path associated with the first stage amplification circuit 111 or the second stage amplification circuit 112, so as to implement signal amplification of the input signal of the rf power amplifier 1 through the first stage amplification circuit 111 or the second stage amplification circuit 112.

In one embodiment, the gate switching circuit 12 controls the on or off state of the switch managed by the gate switching circuit when receiving the second operation command, so as to gate the connection path of the cascade amplification circuit 11, and enable the input signal of the radio frequency power amplifier 1 to be subjected to signal amplification through the multistage amplification circuit 11.

As can be seen from the above, in the radio frequency power amplifier 1 provided in the embodiment of the present application, when the first operating instruction is received, only the first stage amplifying circuit 111 or the second stage amplifying circuit 112 is in the operating state, which alleviates the characteristic of the radio frequency power amplifier that the nonlinearity is increased when the radio frequency power amplifier passes through a plurality of nonlinear units, and when the second operating instruction is received, both the first stage amplifying circuit 111 and the second stage amplifying circuit 112 are in the operating state without adding a new amplifying circuit, so that the circuit complexity and the cost of the radio frequency power amplifier are not increased.

Based on the foregoing embodiments, the present application provides a radio frequency power amplifier 1, as shown in fig. 5, where the radio frequency power amplifier 1 includes a multi-stage amplifying circuit 11 and a gate switching circuit 12, the multi-stage amplifying circuit 11 includes a first-stage amplifying circuit 111 and a second-stage amplifying circuit 112 that are cascaded, where the gate switching circuit 12 is configured to, when receiving a first operating instruction, perform signal amplification on an input signal of the radio frequency power amplifier 1 through the first-stage amplifying circuit 111 or the second-stage amplifying circuit 112 by switching control, and the gate switching circuit 12 is further configured to, when receiving a second operating instruction, perform signal amplification on the input signal of the radio frequency power amplifier 1 through the multi-stage amplifying circuit 11 by switching control; the gating switching circuit 12 includes a first switch group and a first coupling circuit, where the first switch group is used to respond to a first working instruction to connect the input terminal of the radio frequency power amplifier 1 and the second stage amplifying circuit 112, and the first coupling circuit is used to match the input terminal of the second stage amplifying circuit 112 to a first preset state.

In the radio frequency power amplifier 1 provided in the embodiment of the present application, at least one first switch group and at least one first coupling circuit may be included.

In one embodiment, the first switch set may include at least two switches.

In one embodiment, the input signal of the rf power amplifier 1 is subjected to the power amplification process of the second stage amplifying circuit 112 by controlling the open or closed state of at least two switches in the first switch group.

In one embodiment, the first coupling circuit may include an inductor and a capacitor.

In one embodiment, the open or closed state of at least two switches in the first switch group is controlled, so that the inductor and the capacitor in the first coupling circuit form a matching circuit for the second stage amplifying circuit 112 in the radio frequency power amplifier 1.

Illustratively, the first switch set may include a first switch S1 and a second switch S2. The first switch S1 is located between the first coupling circuit and the ground terminal of the rf power amplifier 1; and a second switch S2 for connecting or disconnecting the first coupling circuit to the input terminal of the second stage amplifying circuit 122.

In one embodiment, the first switch S1 and the second switch S2 may be implemented by various Semiconductor processes, such as a Complementary Metal Oxide Semiconductor (CMOS), a Silicon-On-Insulator (SOI) CMOS, a PIN diode, or the like.

Illustratively, the first coupling circuit may include a first coupling capacitor C1, a second coupling capacitor C2, and a first coupling inductor L1. The first coupling capacitor C1 is disposed between the input terminal of the rf power amplifier 1 and the first switch S1, and the branch formed by the second coupling capacitor C2 and the first coupling inductor L1 is disposed between the input terminal of the rf power amplifier 1 and the input terminal of the second stage amplifying circuit 122.

Illustratively, a first terminal of the first coupling capacitor C1 is connected to the rf input terminal, i.e. the input terminal of the rf power amplifier 1, and a second terminal is connected to one terminal of the first switch S1; the other end of the first switch S1 is connected to the ground inductor of the second stage amplifier circuit 112; one end of the second coupling capacitor C2 is connected to one end of the second switch S2, and the other end is connected to the input end of the second-stage amplifying circuit 112; the other end of the second switch S2 is connected to the first end of the first coupling inductor L1; the second end of the first coupling inductor L1 is connected with the common node of the first coupling capacitor C1 and the radio frequency input end; the output terminal of the second stage amplifying circuit 112 is the output terminal of the rf power amplifier 1, i.e. the rf output terminal in fig. 5.

Specifically, as shown in fig. 5, the second coupling capacitor C2 can perform the functions of ac/dc blocking when the first switch S1 is closed.

Illustratively, the gate switching circuit 12 includes a second switch group and a second coupling circuit, wherein the second switch group is configured to implement connection between the input terminal of the radio frequency power amplifier 1 and the multi-stage amplifying circuit 11 in response to a second operating instruction, and the second coupling circuit is configured to match the input terminal of the first-stage amplifying circuit 11 to a second preset state.

For example, the second preset state may be a state in which the input terminal of the first amplifying circuit 111 is impedance-matched.

In one embodiment, the second preset state may be a state that the spectral characteristics of the input signal at the input terminal of the first amplifying circuit 111 match the operating frequency band of the second amplifying circuit 111.

In the radio frequency power amplifier 1 provided in the embodiment of the present application, at least one second switch group and at least one second coupling circuit may be included.

In one embodiment, the second switch set may include at least two switches.

In one embodiment, the input signal of the radio frequency power amplifier 1 is subjected to the power amplification process of the multistage amplification circuit 11 by changing the open or closed state of at least two switches in the second switch group.

In one embodiment, the second coupling circuit may include a plurality of inductors and capacitors.

In one embodiment, the open or closed state of at least two switches in the second switch group is controlled so that the inductor and the capacitor in the second coupling circuit form a matching circuit for the multistage amplification circuit 11 in the radio frequency power amplifier 1.

Illustratively, the second switch group may include a third switch S3, a fourth switch S4, and a fifth switch S5. The third switch S3 is located between the second coupling circuit and the ground terminal of the rf power amplifier 1; a fourth switch S4, disposed between the second coupling circuit and the input terminal of the first stage amplifying circuit 111; a fifth switch S5 disposed between the output terminal of the first-stage amplification circuit 111 and the input terminal of the second-stage amplification circuit 112; optionally, a matching network may be further disposed between the output terminal of the first-stage amplifying circuit 111 and the input terminal of the second-stage amplifying circuit 112.

In one embodiment, the third switch S3, the fourth switch S4, and the fifth switch S5 may be implemented based on various semiconductor processes, such as CMOS, SOI CMOS, PIN diode, and the like.

Illustratively, the second coupling circuit may include a third coupling capacitor C3, a fourth coupling capacitor C4, and a second coupling inductor L2. The third coupling capacitor C3 is disposed between the input terminal of the rf power amplifier 1 and the third switch S3; the branch formed by the fourth coupling capacitor C4 and the second coupling inductor L2 is disposed between the input terminal of the rf power amplifier 1 and the input terminal of the multi-stage amplifying circuit 11.

Illustratively, the first terminal of the third switch S3 is connected to the third coupling capacitor C3, and the second terminal is inductively connected to the ground terminal of the first stage amplifying circuit 111; the other end of the third coupling capacitor C3 is connected to the input end of the rf power amplifier 1, i.e. the rf input end in fig. 5, and one end of the second coupling inductor L2; a first end of the fourth switch S4 is connected to the second coupling inductor L2, and a second end is connected to the fourth coupling capacitor C4; the other end of the second coupling inductor L2 is connected to the third coupling capacitor C3 and the input end of the rf power amplifier 1, i.e., the rf input end in fig. 5; the other end of the fourth coupling capacitor C4 is connected to the input end of the first stage amplifier circuit 111; a first end of the fifth switch S5 is connected to the matching network at the output end of the first-stage amplification circuit 111, and a second end is connected to the input end of the second-stage amplification circuit 112; the output end of the second stage amplifying circuit 112 is the output end of the rf power amplifier 1, i.e. the rf output end in fig. 5. The third capacitor C1 and the first capacitor C3 may be the same capacitor; the first inductor L1 and the second inductor L2 may be the same inductor.

Specifically, after the first switch S1 and the second switch S2 are closed, a signal loop is formed between the input terminal of the rf power amplifier 1 and the input terminal and the ground terminal of the second stage amplifying circuit 112 while the other switches are kept in the open state. The first coupling capacitor C1 and the first coupling inductor L1 form a high-pass filter circuit, and before the rf signal is input to the input terminal of the rf power amplifier 1, the rf signal is first input-matched by the high-pass filter circuit, and then is amplified by the second-stage amplifier circuit 112.

That is, in the circuit diagram of the radio frequency power amplifier 1 shown in fig. 5, after the radio frequency power amplifier 1 receives the first operation instruction, the gate switching circuit 12 controls the first switch S1 and the second switch S2 to be closed, and controls the other switches to maintain the open state, the second-stage amplification circuit 112 is in the operation state, the first-stage amplification circuit 111 is not set with the bias voltage or current, and the first-stage amplification circuit is bypassed.

Illustratively, the first predetermined state may be a state in which the input terminal of the second stage amplifier circuit 112 is impedance-matched.

In one embodiment, the first preset state may be a state that the spectral characteristics of the input signal at the input of the second stage amplifier circuit 112 are matched with the operating frequency band of the second stage amplifier circuit 112.

Illustratively, after the radio frequency power amplifier 1 receives the first operation command, the gate switching circuit controls the first switch S1 and the second switch S2 to be closed, thereby controlling the second stage amplifying circuit 112 to enter an operation state matching the first operation command. Alternatively, the operation state matched with the first operation command may be an operation state of the LPM mode.

In one embodiment, the first coupling capacitor C1, the second coupling capacitor C2 and the first coupling inductor L1 in the rf power amplifier 1 are all adjustable, so that the bias voltage or the bias current of the second stage amplifying circuit 112 in the rf power amplifier 1 can be flexibly adjusted according to the actual requirements of the previous stage circuit and the next stage circuit.

Illustratively, as shown in fig. 5, when the radio frequency power amplifier 1 receives a second operation command from the preceding stage circuit, the gate switching circuit 12 controls the third switch S3, the fourth switch S4 and the fifth switch S5 in the second switch group to switch from an open state to a closed state, and controls the other switches to maintain the open state, so that the radio frequency signal is input to the input terminal of the first stage amplification circuit 111 of the radio frequency power amplifier 1 through the branch consisting of the second coupling inductor L2, the fourth switch S4 and the fourth coupling capacitor C4, and the branch consisting of the third coupling capacitor C3 and the third switch S3 constitutes a ground terminal loop part of the first stage amplification circuit 111. The radio frequency signal output by the first-stage amplification circuit 111 and subjected to the first-stage amplification processing is input to the input end of the second-stage amplification circuit 112 through the fifth switch, and is output to the radio frequency output end after being processed by the second-stage amplification circuit 112.

In fig. 5, when the rf power amplifier 1 receives the second operation command, the third switch S3, the fourth switch S4, and the fifth switch S5 in the rf power amplifier 1 are switched from the open state to the closed state, and the other switches are kept in the open state, the second coupling inductor L2 and the fourth coupling capacitor C4 form a matching circuit of the first-stage amplification circuit 111 in the form of high-pass filtering, so as to match the impedance of the input terminal of the first-stage amplification circuit 111 to a predetermined impedance, such as 50 ohms. At this time, the rf power amplifier 1 sequentially processes the input rf signal through the first stage amplifier circuit 111 and the second stage amplifier circuit 112, and finally obtains an rf signal with a power level meeting the antenna transmission requirement.

In one embodiment, the third coupling capacitor C3, the fourth coupling capacitor C4, and the second coupling inductor L2 in the rf power amplifier 1 are all adjustable, so that the bias voltage or the bias current of the rf power amplifier 1 can be flexibly adjusted based on the variation of the previous stage circuit and the variation of the antenna transmission power.

In one implementation, the multi-stage amplifying circuit 11 provided in the embodiment of the present application and the circuit structure between the second coupling circuit and the second switch group may be cascaded, so that a radio frequency power amplifier including at least four stages of amplifying circuits may be implemented.

In an implementation manner, the circuit structures between the multi-stage amplifying circuit 11, the second coupling circuit and the second switch group provided in the embodiments of the present application may be independent circuit units, and the circuit units may be freely combined to obtain a radio frequency power amplifier including N stages of amplifying circuits, where N is an integer greater than or equal to 3.

The radio frequency power amplifier 1 provided by the embodiment of the application comprises a multistage amplification circuit 11 and a gating switching circuit 12, wherein the multistage amplification circuit 11 comprises a first-stage amplification circuit 111 and a second-stage amplification circuit 112 which are cascaded, the gating switching circuit 12 is used for enabling an input signal of the radio frequency power amplifier 1 to pass through the first-stage amplification circuit 111 and the second-stage amplification circuit 112 through switch control when receiving a first working instruction, and the gating switching circuit 12 is also used for enabling the input signal of the radio frequency power amplifier 1 to pass through the multistage amplification circuit 11 for signal amplification through switch control when receiving a second working instruction; the gating switching circuit 12 includes a first switch group and a first coupling circuit, where the first switch group is used to respond to a first working instruction to connect the input terminal of the radio frequency power amplifier 1 with the second-stage amplifying circuit 112, and the first coupling circuit is used to match the input terminal of the second-stage amplifying circuit 112 to a first preset state; and the gating switching circuit 12 comprises a second switch group and a second coupling circuit, wherein the second switch group is used for responding to a second working instruction and realizing the connection between the input end of the radio frequency power amplifier 1 and the multistage amplifying circuit 11, and the second coupling circuit is used for matching the input end of the first stage amplifying circuit 111 to a second preset state.

Therefore, the radio frequency power amplifier 1 provided in the embodiment of the present application, based on the first operating instruction and the second operating instruction, can enable the input terminal of the second amplifier circuit 112 to stably receive the radio frequency signal input by the radio frequency power amplifier 1 in a matched state by controlling the states of the switches in the first switch group and the second switch group in the gating switching circuit 12, or enable the input terminal of the multi-stage amplifier circuit 11 to stably receive the radio frequency signal input by the radio frequency power amplifier 1 in a matched state. Therefore, the radio frequency power amplifier 1 provided in the embodiment of the present application can stably amplify an input signal in different operating modes without changing the overall structure, increasing the circuit complexity, or adding an additional power amplifier circuit, thereby reducing the risks of low processing efficiency and increased gain nonlinearity of the radio frequency power amplifier caused by amplifying the input signal by using a two-stage amplifier circuit. And no complex circuit layout is required, thereby reducing the risk of exacerbating non-linearity in the radio frequency signal processing process.

Based on the foregoing embodiments, the present application provides a radio frequency power amplifier 1, as shown in fig. 6, where the radio frequency power amplifier 1 includes a multi-stage amplifying circuit 11 and a gate switching circuit 12, the multi-stage amplifying circuit 11 includes a first-stage amplifying circuit 111 and a second-stage amplifying circuit 112 that are cascaded, where the gate switching circuit 12 is configured to, when receiving a first operating instruction, enable an input signal of the radio frequency power amplifier 1 to pass through the first-stage amplifying circuit 111 or the second-stage amplifying circuit 112 through switch control, gate the switching circuit 12, and, when receiving a second operating instruction, enable the input signal of the radio frequency power amplifier 1 to pass through the multi-stage amplifying circuit 11 through switch control for signal amplification; the gating switching circuit 12 includes a third switch group and a third coupling circuit, where the third switch group is used to respond to the first working instruction and implement connection between the input terminal of the radio frequency power amplifier 1 and the input terminal of the first-stage amplifying circuit 111; and a third coupling circuit for matching the input terminal of the first stage amplifying circuit 111 to a third preset state.

Illustratively, the third preset state may be a state in which the input terminal of the first amplifying circuit 111 is impedance-matched.

In one embodiment, the third preset state may be a state that the spectral characteristics of the input signal at the input terminal of the first amplifying circuit 111 match the operating frequency band of the first amplifying circuit 111.

In one embodiment, the third preset state may be a state in which the characteristic parameter of the input signal at the input terminal of the first amplification circuit 111 matches both the impedance and the frequency band of the first amplification circuit 111.

The second operation command may be a command for controlling the rf power amplifier 1 to switch the operating state of the rf power amplifier 1 to the LPM.

In the radio frequency power amplifier 1 provided in the embodiment of the present application, at least one third switch group and at least one third coupling circuit may be included.

In one embodiment, the third switch set may include at least two switches.

In one embodiment, the input signal of the radio frequency power amplifier 1 is subjected to the power amplification process of the first stage amplification circuit 111 by changing the open or closed state of at least two switches in the third switch group.

In one embodiment, the third coupling circuit may include a plurality of inductors and capacitors.

In one embodiment, the open or closed state of at least two switches in the third switch group is controlled so that the inductor and the capacitor in the third coupling circuit form a matching circuit for the first stage amplification circuit 111 in the radio frequency power amplifier 1.

Illustratively, as shown in fig. 6, the third switch group includes a sixth switch S6, a seventh switch S7 and an eighth switch S8, wherein the sixth switch S6 is used for connecting or disconnecting the third coupling circuit with the input terminal of the first-stage amplification circuit 111; a seventh switch S7, disposed between the third coupling circuit and the ground terminal of the rf power amplifier 1; the eighth switch S8 is disposed between the output terminal of the first stage amplifier circuit 111 and the rf output terminal of the rf power amplifier 1.

In one embodiment, the sixth switch S6, the seventh switch S7, and the eighth switch S8 may be implemented by various semiconductor processes, such as CMOS, SOI CMOS, PIN diode, and the like.

Illustratively, as shown in fig. 6, the third coupling circuit includes a third coupling inductor L3, a fifth coupling capacitor C5, and a sixth coupling capacitor C6. The fifth coupling capacitor C5 is located between the input terminal of the radio frequency power amplifier 1 and the seventh switch S7; the branch formed by the third coupling inductor L3 and the sixth coupling capacitor C6 is disposed between the input terminal of the rf power amplifier 1 and the input terminal of the first-stage amplifying circuit 111.

Specifically, when the sixth switch S6, the seventh switch S7, and the eighth switch S8 are in a closed state, and other switches are in an open state, a radio frequency signal input at the radio frequency input end of the radio frequency power amplifier 1 is input to the input end of the first-stage amplification circuit 111 through a branch composed of the third coupling inductor L3, the sixth switch S6, and the sixth coupling capacitor C6, is output to the radio frequency output end of the radio frequency power amplifier 1 through power amplification processing of the first-stage amplification circuit 111, and through the eighth switch S8, and finally, a radio frequency signal whose power meets the requirement of a next-stage circuit is sent to a next-stage circuit of the radio frequency power amplifier 1.

Specifically, a first terminal of the sixth switch S6 is connected to the third coupling inductor L3, and a second terminal is connected to the sixth coupling capacitor C6; the other end of the third coupling inductor L3 is connected to the rf input terminal of the rf power amplifier 1 and the fifth coupling capacitor C5; the other end of the fifth coupling capacitor C5 is connected with the seventh switch S7; the other end of the sixth coupling capacitor C6 is connected to the input end of the first-stage amplification circuit 111; the other end of the seventh switch S7 is connected to the ground inductor of the first-stage amplification circuit 111; the first terminal of the eighth switch S8 is connected to the output terminal of the first stage amplifier circuit 111, and the second terminal is connected to the output terminal of the rf power amplifier 1, i.e. the rf output terminal in fig. 6.

Exemplarily, in fig. 6, a ninth switch S9 may be further disposed between the first-stage amplification circuit 111 and the second-stage amplification circuit 112, wherein a first terminal of the ninth switch S9 is connected to the output terminal of the first-stage amplification circuit 111 or the matching network of the output terminal of the first-stage amplification circuit 111, and a second terminal is connected to the input terminal of the second-stage amplification circuit 112; the output terminal of the second stage amplifier 112 is connected to the output terminal of the rf power amplifier 1, i.e. the rf output terminal. Upon receiving the second operation command, the gate switching circuit 2 may control the ninth switch S9 to be in an open state, so that the output signal of the first-stage amplification circuit 111 is output to the rf output terminal of the rf power amplifier 1 via the eighth switch S8.

For example, when the radio frequency power amplifier 1 receives the second operation command, the gate switching circuit 2 of the radio frequency power amplifier 1 controls the sixth switch S6, the seventh switch S7, and the eighth switch S8 in the third switch group to switch from the open state to the closed state, and the other switches keep the open state, so that the first stage amplification circuit 111 of the radio frequency power amplifier 1 is in the operation state, and the power amplification processing of the input signal by the radio frequency power amplifier 1 can be realized.

In one embodiment, when the radio frequency power amplifier 1 receives the first operation command, the gate switching circuit 2 of the radio frequency power amplifier 1 controls the sixth switch S6, the ninth switch S9 and the seventh switch S7 to be switched to the closed state, and the other switches are kept in the open state, so that the first stage amplification circuit 111 and the second stage amplification circuit of the radio frequency power amplifier 1 are in the operation state, and the power amplification processing of the input radio frequency signal can be realized.

In an embodiment, the third switch group, the third coupling circuit and the first-stage amplifying circuit 111 in the radio-frequency power amplifier 1 may be used alone, or may implement cascade connection of a plurality of first-stage amplifying circuits 111 in a cascade connection manner, so as to achieve the purpose of performing multi-stage amplification processing on a radio-frequency signal.

The radio frequency power amplifier 1 provided in the embodiment of the present application includes: the multi-stage power amplifier comprises a multi-stage amplifying circuit 11 and a gating switching circuit 12, wherein the multi-stage amplifying circuit 11 comprises a first-stage amplifying circuit 111 and a second-stage amplifying circuit 112 which are cascaded, the gating switching circuit 12 is used for enabling an input signal of a radio frequency power amplifier 1 to pass through the first-stage amplifying circuit 111 and the second-stage amplifying circuit 112 through switch control when a first working instruction is received, and the gating switching circuit 12 is also used for enabling the input signal of the radio frequency power amplifier 1 to pass through the multi-stage amplifying circuit 11 to carry out signal amplification through switch control when a second working instruction is received; the gating switching circuit 12 includes a third switch group and a third coupling circuit, where the third switch group is used to respond to the first working instruction and implement connection between the input terminal of the radio frequency power amplifier 1 and the input terminal of the first-stage amplifying circuit 111; and a third coupling circuit for matching the input terminal of the first stage amplifying circuit 111 to a third preset state.

Therefore, the radio frequency power amplifier 1 provided in the embodiment of the present application can implement the processing of performing power amplification on the input signal only by using the first-stage amplification circuit 111 of the radio frequency power amplifier 1 by controlling the gate switching circuit 12 without changing the overall circuit structure of the radio frequency power amplifier 1. Therefore, the radio frequency power amplifier 1 provided in the embodiment of the present application can improve the problem of nonlinear deterioration of signal gain with spectrum change in the process of processing the radio frequency signal when the LPM operation mode is implemented.

Based on the foregoing embodiments, the present application provides a radio frequency power amplifier 1, where the radio frequency power amplifier 1 includes a multi-stage amplification circuit 11 and a gate switching circuit 12, the multi-stage amplification circuit 11 includes a first-stage amplification circuit 111 and a second-stage amplification circuit 112 that are cascaded, where the gate switching circuit 12 is configured to, when receiving a first work instruction, enable an input signal of the radio frequency power amplifier 1 to pass through the first-stage amplification circuit 111 and the second-stage amplification circuit 112 through switch control, and enable the gate switching circuit 12 to, when receiving a second work instruction, enable the input signal of the radio frequency power amplifier 1 to pass through the multi-stage amplification circuit 11 through switch control for signal amplification. The first working instruction comprises a first switching parameter and a second switching parameter; the first switching parameter is used for gating the switching circuit to control an input signal of the radio frequency power amplifier 1 to be amplified through the first-stage amplifying circuit or the second-stage amplifying circuit through the switch; and the second switching parameter is used for gating the switching circuit and controlling the input signal of the radio frequency power amplifier 1 to be amplified through the multistage amplifying circuit through a switch.

Specifically, the first operation command and the second operation command may be sent to the rf power amplifier 1 by the front stage circuit.

In one embodiment, the first operation command and the second operation command may be operation commands sent by the transmitter to the rf power amplifier 1.

In one embodiment, the first operation command and the second operation command may be operation commands that are sent to the rf power amplifier 1 in advance according to the requirements of the front stage circuit and the requirements of the back stage circuit of the rf power amplifier 1.

In one embodiment, the first operation command may be an operation command for controlling the operation state of the rf power amplifier 1 to be LPM.

In one embodiment, the second operation command may be an operation command for controlling the operation state of the rf power amplifier 1 to be the HPM.

Specifically, fig. 7 is a general circuit configuration diagram of the radio frequency power amplifier 1 according to the embodiment of the present application. In fig. 7, the amplifier circuit P1 and the amplifier circuit P2 are included, and the capacitor C11, C21, C31, the inductor L11, the switch SW3-1, the switch SW3-2, the switch SW4-1, the switch SW4-2, the switch SW4-3 and the switch SW4-4 are also included, and a matching network is also included.

Specifically, as shown in fig. 7, the capacitor C11 has a first terminal connected to the rf input terminal and the inductor L11, and a second terminal connected to the switch SW4-1 and the switch SW4-3, respectively; the other end of the inductor L11 is connected with the switch SW3-1 and the switch SW 4-2; the other end of the switch SW4-1 is connected with the grounding inductor of the amplifying circuit P2; the other end of the switch SW3-1 is connected with a capacitor C31; the other end of the capacitor C31 is connected with the input end of the amplifying circuit P1; the output end of the amplifying circuit P1 is respectively connected with the switch SW4-3 and the matching network; the other end of the switch SW4-3 is connected with the capacitor C11 and the switch SW 4-1; the output of the amplifying circuit P2 is also connected to the rf output.

The input end of the amplifying circuit P2 is respectively connected with the switch SW3-2 and the capacitor C21; the other end of the capacitor C21 is connected with the other end of the switch SW 4-2; the other end of the switch SW3-2 is connected with the output end of the matching network of the amplifying circuit P1; the input of the matching network is connected to the output of the amplifying circuit P1.

Illustratively, when the radio frequency power amplifier receives a first work instruction, if a first switching parameter in the first work instruction indicates that the current radio frequency power amplifier needs to process a radio frequency signal by using the amplifying circuit P2, the gate switching circuit controls the switches SW4-1 and SW4-2 to be closed, and the other switches remain in an open state, at this time, the amplifying circuit P2 may amplify the radio frequency signal processed by the high-pass filtering circuit composed of the inductor L11 and the capacitor C11, and output the amplified radio frequency signal to the radio frequency output terminal.

Illustratively, when the radio frequency power amplifier receives a first working instruction, if a first switching parameter in the first working instruction indicates that the current radio frequency power amplifier needs to process a radio frequency signal by using the amplifying circuit P1, the gate switching circuit controls the switches SW3-1, SW4-3 and SW4-4 to be closed, and the other switches remain in an open state, at this time, the amplifying circuit P1 may receive the radio frequency signal input by the radio frequency power amplifier via a high-pass filter circuit composed of an inductor L11 and a capacitor C11, and implement amplification processing on the power of the radio frequency signal, and then send the signal to the radio frequency output terminal via the switch SW 4-4.

Illustratively, when the radio frequency power amplifier receives a second working instruction, the gating switching circuit controls the switches SW3-1 and SW4-3 to be in a closed state, so that the amplifying circuit P1 can be in a working state to process the radio frequency signal input by the radio frequency input end; meanwhile, the gate switching circuit controls the switch SW3-2 to be in a closed state, so that the output circuit of the amplifying circuit P1 can be input to the amplifying circuit P2 through the matching network and output to the radio frequency output end through the processing of the amplifying circuit P2.

Based on the foregoing embodiments, the present application provides another overall rf power amplifier circuit, as shown in fig. 8. It should be noted that, although the circuit structure of the another rf power amplifier overall circuit shown in fig. 8 is different from that of the rf power amplifier overall circuit shown in fig. 7, the implemented functions are the same, that is, in fig. 8, by controlling the on or off state of each switch, the function of single-stage amplification or multi-stage amplification of the rf signal input at the rf input terminal can be implemented.

Illustratively, in the overall circuit diagram of the radio frequency power amplifier shown in fig. 8, the radio frequency power amplifier includes an amplifying circuit P1, an amplifying circuit P2, inductors L101 and L102, capacitors C101 and C102, switches S101, S102, S103, S104 and S105, and further includes a first matching network and a second matching network. Wherein, the switch S103 and the switch S105 may be single-pole double-throw switches, respectively.

In the circuit structure diagram of the radio frequency power amplifier shown in fig. 8, a first end of an inductor L101 is connected to a radio frequency input end and a capacitor C101, respectively, a second end of the inductor L101 is connected to a switch S101, the other end of the switch S101 is connected to a capacitor C102, the other end of the capacitor C101 is connected to a switch S102 and a switch S104, and the other end of the switch S102 is connected to a grounding inductor of an amplifying circuit P1; the other end of the switch S104 is connected with the inductor L102; the other end of the inductor L102 is connected to a second matching network.

The other end of the capacitor C102 is connected with the input end of an amplifying circuit P1, the output end of the amplifying circuit P1 is connected with a switch S103, and the other end of the switch S103 is provided with a first matching network and a second matching network. The other end of the first matching network is provided with a switch S105, the other end of the second matching network is connected with the input end of the amplifying circuit P2, the output end of the amplifying circuit P2 is provided with a switch S105, and the other end of the switch S105 is connected with the radio frequency output end of the radio frequency power amplifier.

For example, if the overall rf power amplifier circuit shown in fig. 8 receives a first operating command, and if the first operating command is used to instruct the amplifying circuit P1 to amplify the rf signal input by the rf input terminal, the gate switching circuit controls the switches S101 and S102 to be in the closed state, the switch S103 and the switch S105 are respectively connected to the first matching network, and the other switches are in the open state, at this time, the rf signal input by the rf input terminal is input to the input terminal of the amplifying circuit P1 through the high-pass filter formed by the inductor L101 and the capacitor C101, and is output to the rf output terminal through the switch S105 through the output terminal of the amplifying circuit P1, the switch S103 and the first matching network after being processed by the amplifying circuit P1.

For example, if the overall circuit diagram of the radio frequency power amplifier shown in fig. 8 receives a first operating command, and if the first operating command is used to instruct the amplifying circuit P2 to amplify a radio frequency signal input at the radio frequency input terminal, the gate switching circuit controls the switch S104 to be in a closed state, the switch S105 is connected to the output terminal of the amplifying circuit P2, and the other switches are all in an open state, at this time, the radio frequency signal input at the radio frequency input terminal is input to the input terminal of the amplifying circuit P2 through the high-pass filter formed by the inductor L102 and the capacitor C101, and is output to the radio frequency output terminal through the switch S105 through the output terminal of the amplifying circuit P2 and the second matching network by the processing of the amplifying circuit P2.

For example, if the overall circuit diagram of the radio frequency power amplifier shown in fig. 8 receives a second operating command, the gate switching circuit controls the switch S101 and the switch S102 to be in a closed state, the switch S103 is connected to the second matching network, the switch S105 is connected to the output end of the amplifying circuit P2, and the other switches are all in an open state, at this time, a radio frequency signal input from the radio frequency input end is input to the input end of the amplifying circuit P1 through the high-pass filter formed by the inductor L101 and the capacitor C101, is input to the input end of the amplifying circuit P2 through the processing of the amplifying circuit P1, is input to the input end of the amplifying circuit P2 through the output end of the amplifying circuit P1 and the second matching network, and is output to the radio frequency output end through the output end of the amplifying circuit P2 and the switch S.

Exemplarily, as shown in fig. 9. In fig. 9, the horizontal direction is a frequency axis, and the vertical direction is a gain change axis of the radio frequency power amplifier 1, where in the two-dimensional frequency-gain coordinate, a first curve appearing in the gain change direction is a gain change curve with frequency when the radio frequency power amplifier 1 receives a first operating instruction and the first-stage amplifier circuit 111 or the second-stage amplifier circuit 112 of the radio frequency power amplifier 1 is in an operating state, and a second curve is a gain change curve with frequency when the radio frequency power amplifier operates in the LPM mode when the second scheme is adopted in the relative art. As can be seen from fig. 9, from the interval f1-f2, the slope of the first curve is gentler than the slope of the second curve, and the gain is also reduced, so that the dynamic power output range of the radio frequency power amplifier can be increased.

For example, the rf power amplifiers provided in fig. 7 and fig. 8 in the embodiments of the present application may control each switch separately in practical use, and may further adopt a cascade connection of multiple rf power amplifiers to implement a multi-stage amplification process on an rf signal.

Also, in the radio frequency power amplifier shown in fig. 7, a matching network may be further provided, including a first matching network corresponding to the amplifying circuit P1 and a second matching network corresponding to the amplifying circuit P2.

In one embodiment, the matching network may include an input matching network of each of the amplifying circuits and may further include an output matching network of each of the amplifying circuits.

The radio frequency power amplifier 1 provided by the embodiment of the application includes a multi-stage amplification circuit 11 and a gating switching circuit 12, the multi-stage amplification circuit 11 includes a first-stage amplification circuit 111 and a second-stage amplification circuit 112 which are cascaded, wherein the gating switching circuit 12 is configured to enable an input signal of the radio frequency power amplifier 1 to pass through the first-stage amplification circuit 111 or the second-stage amplification circuit 112 through switch control when receiving a first working instruction, and the gating switching circuit 12 is further configured to enable the input signal of the radio frequency power amplifier 1 to perform signal amplification through the multi-stage amplification circuit 11 through switch control when receiving a second working instruction. The first working instruction comprises a first switching parameter and a second switching parameter; the first switching parameter is used for gating the switching circuit to control an input signal of the radio frequency power amplifier to be amplified through the first-stage amplifying circuit or the second-stage amplifying circuit through the switch; and the second switching parameter is used for gating the switching circuit and controlling the input signal of the radio frequency power amplifier 1 to be amplified through the multistage amplifying circuit through a switch.

Thus, the radio frequency power amplifier 1 provided in the embodiment of the present application can switch the radio frequency power amplifier to different operating states when receiving different operating instructions without changing the overall structure of the circuit. Therefore, the radio frequency power amplifier 1 provided in the embodiment of the present application can realize respective control of the first-stage amplification circuit and the second-stage amplification circuit without adding an additional power amplification device, and can reduce the complexity of the radio frequency power amplifier circuit.

Based on the foregoing embodiments, the present application provides a method for implementing radio frequency signal amplification, which may be implemented by the radio frequency power amplifier 1 provided in the foregoing embodiments, where the radio frequency power amplifier 1 includes a multi-stage amplification circuit and a gate switching circuit, and the multi-stage amplification circuit includes a first-stage amplification circuit and a second-stage amplification circuit that are cascaded. As shown in fig. 10, the method includes:

and 101, when the gating switching circuit receives a first working instruction, the input signal of the radio frequency power amplifier is subjected to signal amplification through the first-stage amplification circuit or the second-stage amplification circuit through switch control.

And 102, when the gating switching circuit receives a second working instruction, the input signal of the radio frequency power amplifier is subjected to signal amplification through the multistage amplification circuit through switch control.

Specifically, a circuit structure of a radio frequency power amplifier for implementing the method for implementing radio frequency signal amplification provided by the embodiment of the present application is shown in fig. 7 or fig. 8.

According to the method for amplifying the radio frequency signal, when a gating switching circuit of the radio frequency power amplifier receives a first working instruction, an input signal of the radio frequency power amplifier is subjected to signal amplification through a first-stage amplifying circuit or a second-stage amplifying circuit through switch control; and when the gating switching circuit of the radio frequency power amplifier receives a second working instruction, the input signal of the radio frequency power amplifier is subjected to signal amplification through the multistage amplification circuit by virtue of switch control.

According to the method for amplifying the radio frequency signal provided by the embodiment of the application, under the condition that the circuit structure of the radio frequency power amplifier is not changed, the radio frequency power amplifier realizes that the working state of the amplifying circuit is separately controlled based on different working instructions, so that the switching of the working state of the radio frequency power amplifier is realized on the premise of not increasing additional amplifying devices, and the complexity of the radio frequency power amplifier circuit is reduced.

The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims

1. A radio frequency power amplifier, comprising a multi-stage amplification circuit including a first stage amplification circuit and a second stage amplification circuit which are cascaded, and a gate switching circuit, wherein,

2. The radio frequency power amplifier of claim 1, wherein the gating switching circuit comprises a first switch set and a first coupling circuit; the first switch group is used for responding to the first working instruction and realizing the connection between the input end of the radio frequency power amplifier and the second-stage amplifying circuit; the first coupling circuit is used for matching the input end of the second stage amplifying circuit to a first preset state.

3. The radio frequency power amplifier of claim 2, wherein the first switch set comprises a first switch and a second switch; wherein the first switch is located between the first coupling circuit and a ground terminal of the radio frequency power amplifier; and the second switch is used for realizing the connection or disconnection of the first coupling circuit and the second-stage amplifying circuit.

4. The radio frequency power amplifier of claim 3, wherein the first coupling circuit comprises a first coupling capacitor, a second coupling capacitor, and a first coupling inductor; the first coupling capacitor is arranged between the input end of the radio frequency power amplifier and the first switch; and a branch circuit consisting of the second coupling capacitor and the first coupling inductor is arranged between the input end of the radio frequency power amplifier and the input end of the second-stage amplifying circuit.

5. The radio frequency power amplifier of claim 1, wherein the gating switching circuit comprises a second switch set and a second coupling circuit; the second switch group is used for responding to the second working instruction and realizing the connection between the input end of the radio frequency power amplifier and the multistage amplifying circuit; the second coupling circuit is used for matching the input end of the first-stage amplifying circuit to a second preset state.

6. The radio frequency power amplifier of claim 5, wherein the second switch set comprises a third switch, a fourth switch, and a fifth switch; the third switch is located between the second coupling circuit and a ground terminal of the radio frequency power amplifier; the fourth switch is arranged between the second coupling circuit and the input end of the first-stage amplifying circuit; the fifth switch is arranged between the output end of the first-stage amplifying circuit and the input end of the second-stage amplifying circuit.

7. The RF power amplifier of claim 6, wherein the second coupling circuit comprises a third coupling capacitor, a fourth coupling capacitor and a second coupling inductor, wherein the third coupling capacitor is disposed between the input terminal of the RF power amplifier and the third switch; and a branch circuit formed by the fourth coupling capacitor and the second coupling inductor is arranged between the input end of the radio frequency power amplifier and the input end of the multistage amplification circuit.

8. The radio frequency power amplifier of claim 1, wherein the gating switching circuit comprises a third switch group and a third coupling circuit; the third switch group is used for responding to the first working instruction and realizing the connection between the input end of the radio frequency power amplifier and the input end of the first-stage amplifying circuit; and the third coupling circuit is used for matching the input end of the first-stage amplifying circuit to a third preset state.

9. The radio frequency power amplifier of claim 8, wherein the third switch set comprises a sixth switch, a seventh switch, and an eighth switch; the sixth switch is used for realizing connection or disconnection of the third coupling circuit and the input end of the first-stage amplifying circuit; the seventh switch is arranged between the third coupling circuit and the grounding end of the radio frequency power amplifier; the eighth switch is arranged between the output end of the first-stage amplifying circuit and the output end of the radio frequency power amplifier.

10. The radio frequency power amplifier of claim 9, wherein the third coupling circuit comprises: a third coupling inductor, a fifth coupling capacitor and a sixth coupling capacitor; the fifth coupling capacitor is located between the input end of the radio frequency power amplifier and the seventh switch; and a branch circuit formed by the third coupling inductor and the sixth coupling capacitor is arranged between the input end of the radio frequency power amplifier and the input end of the first-stage amplifying circuit.

11. The radio frequency power amplifier of claim 1, wherein the first operating instructions comprise a first switching parameter and a second switching parameter; the first switching parameter is used for the gating switching circuit to control the input signal of the radio frequency power amplifier to be amplified through the first-stage amplifying circuit or the second-stage amplifying circuit through the switch; and the second switching parameter is used for controlling the input signal of the radio frequency power amplifier to carry out signal amplification through the multistage amplification circuit by the gating switching circuit through the switch.

12. A method for amplifying a radio frequency signal, wherein the method is applied to a radio frequency power amplifier, wherein the radio frequency power amplifier includes a multi-stage amplification circuit and a gate switching circuit, the multi-stage amplification circuit includes a first stage amplification circuit and a second stage amplification circuit which are cascaded, and the method includes: