CN111628051A - 用于生长氧化铝和氮化硅薄膜的平板式ald和pecvd组合设备 - Google Patents
用于生长氧化铝和氮化硅薄膜的平板式ald和pecvd组合设备 Download PDFInfo
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 14
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 title claims description 11
- 238000000034 method Methods 0.000 claims abstract description 50
- 230000008569 process Effects 0.000 claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 30
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 21
- 230000005540 biological transmission Effects 0.000 claims abstract description 16
- 230000007246 mechanism Effects 0.000 claims abstract description 15
- 230000007704 transition Effects 0.000 claims abstract description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000002955 isolation Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 2
- 238000007599 discharging Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 36
- 235000012431 wafers Nutrition 0.000 description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 230000006872 improvement Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000012864 cross contamination Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
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Abstract
本发明公开了一种用于生长氧化铝和氮化硅薄膜的平板式ALD和PECVD组合设备，包括硅片传输机构，硅片传输机构沿传输方向依次设有上料腔、用于在硅片上生长氧化铝薄膜的原子层沉积工艺腔、用于在硅片上生长氮化硅薄膜的化学气相沉积工艺腔、以及下料腔，所述原子层沉积工艺腔与所述化学气相沉积工艺腔之间设有过渡腔，相邻腔室之间均设有真空隔离阀。本发明具有结构紧凑、生产效率高、膜层质量好等优点。
Description
技术领域
本发明涉及高效晶硅太阳能电池生产设备，尤其涉及一种用于生长氧化铝和氮化硅薄膜的平板式ALD和PECVD组合设备。
背景技术
制备高效晶硅太阳能电池需要在硅片上生长Al2O3和Si3N4薄膜，Al2O3薄膜为极薄薄膜(可小于3nm)，而Si3N4薄膜为较厚薄膜(可大于150nm)。对于两种薄膜的制备，目前主要有两种方式：一种是采用2道工序，先在一台设备上完成Al2O3薄膜的制备，然后取出硅片送到另一台设备或同一台设备的另一个工位进行Si3N4薄膜的制备；另一种是在同一台设备上采用微波或射频CVD(化学气相沉积)方法分别沉积两种薄膜。
第一种方式由于在两个工序或两台设备之间传送硅片时，要将硅片从真空环境的工艺腔体取出暴露在大气环境，容易造成污染，使得膜层质量发生变化，同时由于需要两台设备，占地面积大，所需作业人员多、硅片上下料机构多。第二种方式由于在同一台设备上用微波或射频CVD方法分别生长两种薄膜，虽然Si3N4薄膜的厚度可以满足要求，但是Al2O3薄膜无法做到极薄(几个纳米)。
发明内容
本发明要解决的技术问题是克服现有技术的不足，提供一种结构紧凑、生产效率高、膜层质量好的用于生长氧化铝和氮化硅薄膜的平板式ALD和PECVD组合设备。
为解决上述技术问题，本发明采用以下技术方案：
一种用于生长氧化铝和氮化硅薄膜的平板式ALD和PECVD组合设备，包括硅片传输机构，硅片传输机构沿传输方向依次设有上料腔、用于在硅片上生长氧化铝薄膜的原子层沉积工艺腔、用于在硅片上生长氮化硅薄膜的化学气相沉积工艺腔、以及下料腔，所述原子层沉积工艺腔与所述化学气相沉积工艺腔之间设有过渡腔，相邻腔室之间均设有真空隔离阀。
作为上述技术方案的进一步改进：所述原子层沉积工艺腔与所述过渡腔之间设有缓存腔。
作为上述技术方案的进一步改进：所述下料腔与所述上料腔之间设有回框机构。
作为上述技术方案的进一步改进：所述化学气相沉积工艺腔配设有微波装置。
与现有技术相比，本发明的优点在于：高效晶体硅太阳能电池的Al2O3厚度很薄，只有几纳米，采用原子层沉积方法(ALD，atomic layer deposition)较容易实现Al2O3极薄薄膜的生长，且厚度也可控；而Si3N4薄膜厚度较厚，可大于150nm，需要快速生长，采用化学气相沉积方法(CVD，chemical vapor deposition)则较容易实现Si3N4薄膜的生长，本发明公开的用于生长氧化铝和氮化硅薄膜的平板式ALD和PECVD组合设备，包括原子层沉积工艺腔和化学气相沉积工艺腔，可以满足两种薄膜的生长，由于两种方法工艺参数不同、工艺真空度差别大，因此设置有过渡腔，在硅片传送过程中起到缓冲过渡作用，并通过过渡腔平衡压力，同时可以起到隔离作用，既防止两个工艺腔室的特殊气体发生交叉污染，又达到隔离真空的目的；硅片一次装夹完成后，通过硅片传输机构传输依次经过各腔室，整体结构紧凑，所需作业人员少，整个工艺过程全部在真空环境中完成，硅片不会暴露在大气环境，膜层的质量好。
附图说明
图1是本发明氧化铝和氮化硅薄膜连续生产设备的结构示意图。
图中各标号表示：1、上料腔；2、原子层沉积工艺腔；3、过渡腔；4、化学气相沉积工艺腔；5、下料腔；6、缓存腔；7、回框机构；8、微波装置。
具体实施方式
以下结合说明书附图和具体实施例对本发明作进一步详细说明。
图1示出了本发明用于生长氧化铝和氮化硅薄膜的平板式ALD和PECVD组合设备的一种实施例，本实施例的氧化铝和氮化硅薄膜连续生产设备，包括硅片传输机构(图中未示出，例如可以是常见的辊棒输送机构，硅片装夹于石墨框上，辊棒旋转带动石墨框移动)，硅片传输机构沿传输方向(附图中为自右向左)依次设有上料腔1、用于在硅片上生长氧化铝薄膜的原子层沉积工艺腔2、用于在硅片上生长氮化硅薄膜的化学气相沉积工艺腔4、以及下料腔5，原子层沉积工艺腔2与化学气相沉积工艺腔4之间设有过渡腔3，相邻腔室之间均设有真空隔离阀(图中未示出，例如可以是常见的气动闸板阀)。
高效晶体硅太阳能电池的Al2O3厚度很薄，只有几纳米，采用原子层沉积方法(ALD，atomic layer deposition)较容易实现Al2O3极薄薄膜的生长，且厚度也可控；而Si3N4薄膜厚度较厚，可大于150nm，需要快速生长，采用化学气相沉积方法(CVD，chemical vapordeposition)则较容易实现Si3N4薄膜的生长，本发明公开的用于生长氧化铝和氮化硅薄膜的平板式ALD和PECVD组合设备，包括原子层沉积工艺腔2和化学气相沉积工艺腔4，可以满足两种薄膜的生长，由于两种方法工艺参数不同、工艺真空度差别大，因此设置有过渡腔3，在硅片传送过程中起到缓冲过渡作用，并通过过渡腔3平衡压力，同时可以起到隔离作用，既防止两个工艺腔室的特殊气体发生交叉污染，又达到隔离真空的目的；硅片一次装夹完成后，通过硅片传输机构传输依次经过各腔室，整个工艺过程全部在真空环境中完成，硅片不会暴露在大气环境，膜层的质量好。
作为优选的技术方案，本实施例中，原子层沉积工艺腔2与过渡腔3之间设有缓存腔6。由于两层薄膜生长所需的时间不同，通过缓存腔6存储石墨框，可以匹配两个工艺腔室的产能。
作为优选的技术方案，本实施例中，下料腔5与上料腔1之间设有回框机构7。硅片完成工艺之后，可以利用回框机构7将空的石墨框回传至上料腔1，用于下一批硅片的装夹，提高了设备的自动化程度和生产效率。
作为优选的技术方案，本实施例中，化学气相沉积工艺腔4配设有微波装置8。在PECVD生长氮化硅薄膜的方法中，微波方式生长速率最高。
虽然本发明已以较佳实施例揭露如上，然而并非用以限定本发明。任何熟悉本领域的技术人员，在不脱离本发明技术方案范围的情况下，都可利用上述揭示的技术内容对本发明技术方案做出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明技术实质对以上实施例所做的任何简单修改、等同变化及修饰，均应落在本发明技术方案保护的范围内。
Claims (4)
1.一种用于生长氧化铝和氮化硅薄膜的平板式ALD和PECVD组合设备，其特征在于：包括硅片传输机构，硅片传输机构沿传输方向依次设有上料腔(1)、用于在硅片上生长氧化铝薄膜的原子层沉积工艺腔(2)、用于在硅片上生长氮化硅薄膜的化学气相沉积工艺腔(4)、以及下料腔(5)，所述原子层沉积工艺腔(2)与所述化学气相沉积工艺腔(4)之间设有过渡腔(3)，相邻腔室之间均设有真空隔离阀。
2.根据权利要求1所述的用于生长氧化铝和氮化硅薄膜的平板式ALD和PECVD组合设备，其特征在于：所述原子层沉积工艺腔(2)与所述过渡腔(3)之间设有缓存腔(6)。
3.根据权利要求1或2所述的用于生长氧化铝和氮化硅薄膜的平板式ALD和PECVD组合设备，其特征在于：所述下料腔(5)与所述上料腔(1)之间设有回框机构(7)。
4.根据权利要求1或2所述的用于生长氧化铝和氮化硅薄膜的平板式ALD和PECVD组合设备，其特征在于：所述化学气相沉积工艺腔(4)配设有微波装置(8)。
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| CN104201214A (zh) * | 2014-08-21 | 2014-12-10 | 广东爱康太阳能科技有限公司 | 一种背面钝化太阳能电池及其制备方法 |
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| CN207845777U (zh) * | 2018-01-15 | 2018-09-11 | 米春初 | 一种硅太阳能电池背钝化双层膜工艺制程镀膜设备 |
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| CN104201214A (zh) * | 2014-08-21 | 2014-12-10 | 广东爱康太阳能科技有限公司 | 一种背面钝化太阳能电池及其制备方法 |
| CN207062372U (zh) * | 2017-06-21 | 2018-03-02 | 绍兴上虞晶信机电科技有限公司 | 自动平板式pecvd氧化铝与氮化硅叠层薄膜制备系统 |
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