CN111599776A - Multi-layer composite nano-porous evaporator - Google Patents
Multi-layer composite nano-porous evaporator Download PDFInfo
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- 239000002131 composite material Substances 0.000 title claims abstract description 20
- 239000007788 liquid Substances 0.000 claims abstract description 111
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 238000001704 evaporation Methods 0.000 claims abstract description 13
- 230000008020 evaporation Effects 0.000 claims abstract description 13
- 238000004377 microelectronic Methods 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 4
- 239000012528 membrane Substances 0.000 claims description 55
- 238000003860 storage Methods 0.000 claims description 45
- 239000011148 porous material Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 4
- 230000009286 beneficial effect Effects 0.000 claims description 3
- 230000009471 action Effects 0.000 claims description 2
- HJELPJZFDFLHEY-UHFFFAOYSA-N silicide(1-) Chemical compound [Si-] HJELPJZFDFLHEY-UHFFFAOYSA-N 0.000 claims description 2
- 230000008093 supporting effect Effects 0.000 claims description 2
- 238000009827 uniform distribution Methods 0.000 claims description 2
- 238000001816 cooling Methods 0.000 abstract description 10
- 230000017525 heat dissipation Effects 0.000 abstract description 9
- 239000010408 film Substances 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000003491 array Methods 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- 238000005086 pumping Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000013461 design Methods 0.000 description 4
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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Abstract
A multi-layer composite nano porous evaporator belongs to the technical field of microelectronic device cooling. Generally consisting of an upper silicon structure, a middle nanoporous structure and a lower silicon structure. The upper silicon structure includes seven manifold channels, an inlet reservoir, an outlet reservoir, and a plurality of vapor channels. The middle layer nano porous structure is obtained by etching processing on the upper layer silicon surface, and the nano hole arrays are uniformly distributed on the film. The lower silicon structure comprises a liquid inlet, a liquid outlet, parallel ribs and micro-channels among the ribs, and is connected with the upper layer by a bonding technology. The device utilizes the thin film evaporation heat dissipation of liquid in the nanometer holes, has the characteristics of stable operation, uniform temperature distribution, high strength of the nanometer film, less required working medium, low pumping power consumption and the like, and solves the problems of high heat flow density and multi-heat-area distribution of microelectronic devices.
Description
Technical Field
The invention relates to a novel multilayer composite nano porous evaporator, belonging to the technical field of microelectronic device cooling.
Technical Field
In recent years, along with the rapid development of the electronic chip manufacturing industry, the military industry, the new energy application technology and the aerospace field, the technology is suitable for engineering applicationElectronic devices have new requirements of miniaturization, high integration and high power, so that microelectronic devices such as gallium nitride (GaN) High Electron Mobility Transistors (HEMTs) and the like are widely applied in various fields. However, the output power of the microelectronic device is greatly limited by the heat dissipation problem on the local hot spot, and researches show that the heat flow density generated on a part of a sub-millimeter region of the GaN-based HEMT device is as high as 5kW/cm2. Therefore, how to effectively dissipate heat to improve the power of the microelectronic device and prolong the service life of the microelectronic device becomes an urgent problem to be solved. At present, the traditional heat dissipation scheme for high heat flux density electronic devices at home and abroad mainly comprises: the high heat conductivity solid soaking material (copper, tungsten copper, diamond and the like) or thermal interface material (soldering tin, heat conducting silicone grease, epoxy resin and the like) is combined with an air cooling or liquid cooling plate, so that the purpose of heat dissipation is achieved. However, due to the existence of thermal contact resistance, the junction temperature cannot be effectively reduced by the conventional heat dissipation method, and the safe and stable operation of the device is seriously threatened. In order to solve the problem, researchers propose a novel embedded cooling scheme for electronic devices, wherein heat is directly dissipated from a substrate of the electronic device instead of being dissipated at the packaging level of the electronic device, so that the use of interface materials is reduced, and the junction temperature of the device is greatly reduced. And insulating dielectric liquid is used as a cooling working medium, so that a working area of the device does not generate a magnetic field, and the running performance of the electronic device is further guaranteed.
Recently, NEMS (Nano-electrical System) technology has been rapidly developed, and the problem of heat transfer in the nanometer scale has become the leading science in the field of heat transfer science. Numerous studies have demonstrated that phase transitions on nanoporous films can consume large amounts of heat, and thus the use of nanoporous films for embedded heat dissipation in high heat flux density microelectronic devices has received much attention from many researchers. The deep research results provide the following standards for high-performance nano-porous evaporation equipment: (1) low thermal resistance to heat transfer from the substrate to the liquid-gas interface; (2) can generate larger capillary force to transport and evaporate the required working medium; (3) an efficient liquid supply structure that minimizes pressure drop; (4) a high efficiency vapor transport channel. However, how to achieve the above standards in the design level troubles people, and the problems of the nano-porous heat dissipation devices at home and abroad at present mainly include: poor mechanical strength of the nanofilm; the liquid supply by utilizing the flow channel is easy to cause the blockage of the nano-pores; the absence of a separate vapor passage makes gas-liquid separation inefficient, etc.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a novel multi-layer composite nano-porous evaporator for overcoming the defects of the prior art.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: a multilayer composite nano porous evaporator is composed of three layers of structures, namely an upper layer silicon structure (1), a middle layer nano porous membrane structure (2) and a lower layer silicon structure (3); wherein the middle layer nano porous membrane structure (2) is directly processed on the lower surface of the upper layer silicon structure (1), and the lower layer silicon structure (3) is connected with the middle layer nano porous membrane structure (2) through bonding.
The upper layer silicon structure comprises N steam channels (1.1), N +1 manifold channels (1.2), an inlet liquid storage tank (1.3) and an outlet liquid storage tank (1.4); the N steam channels (1.1) are a plurality of parallel independent rectangular channels, and two ends of each rectangular channel in the length direction are closed; n +1 manifold channels (1.2) are formed among the N steam channels (1.1) and on two side faces of the two outermost steam channels (1.1); an inlet liquid storage tank (1.3) and an outlet liquid storage tank (1.4) are correspondingly arranged at two ends of the N steam channels (1.1) in the length direction; the manifold channel (1.2) is respectively communicated with the inlet liquid storage tank (1.3) and the outlet liquid storage tank (1.4), so that the liquid working medium can flow from the inlet liquid storage tank (1.3) to the outlet liquid storage tank (1.4) through the manifold channel (1.2); the plurality of steam channels (1.1) are distributed among the N +1 manifold channels (1.2) in parallel, so that the steam generated by evaporation can be transported efficiently; only N steam channels (1.1) are exposed on the upper surface of the upper-layer silicon structure, and the N +1 manifold channels (1.2), the inlet liquid storage tank (1.3) and the outlet liquid storage tank (1.4) are all closed;
the middle layer nano porous membrane structure (2) is obtained by etching the lower surface of the upper layer silicon (1), and an independent nano porous membrane (2.1) with nano holes (2.2) is arranged at the lower port of each steam channel (1.1); the positions of the N nano porous membranes (2.1) correspond to the N steam channels (1.1) in the upper silicon structure (1), so that the formed nano-pore (2.2) array is uniformly distributed on the N nano porous membranes (2.1), and the pore diameter of a single nano-pore is about 200 nm.
Preferably, each nano porous membrane (2.1) is consistent with the size of the lower port of the corresponding steam channel (1.1); the positions of an inlet liquid storage tank (1.3), an outlet liquid storage tank (1.4) and a manifold channel (1.2) which correspond to the middle-layer nano porous membrane structure (2) are all vacant and have no corresponding membrane;
the lower layer silicon structure (3) comprises ribs (3.2) which are arranged in parallel, micro-channels (3.1) among the ribs, a liquid inlet (3.3) and a liquid outlet (3.4); the liquid inlet (3.3) and the liquid outlet (3.4) are of a symmetrical structure and are correspondingly communicated with the inlet liquid storage tank (1.3) and the outlet liquid storage tank (1.4) in the upper-layer silicon structure (1), so that liquid working media can enter and exit the inlet liquid storage tank (1.3) and the outlet liquid storage tank (1.4) from the liquid inlet (3.3) and the liquid outlet (3.4); the upper surface of the lower layer silicon structure (3) is provided with ribs (3.2) and micro-channels (3.1) among the ribs; parallel micro-channels (3.1) are formed between the parallel ribs (3.2), the tops of the ribs (3.2) are in contact with the nano-porous membrane (2.1) in the middle layer, so that a supporting effect is provided for the nano-porous membrane (2.1), and meanwhile liquid in the micro-channels (3.1) supplies liquid for an evaporation process by using strong capillary force in the nano-pores (2.2).
The longitudinal direction of the ribs (3.2) is perpendicular to the longitudinal direction of the nanoporous membrane (2.1).
Two rows of nano holes (2.2) are arranged on each nano porous membrane (2.1).
The sections of the inlet liquid storage tank (1.3) and the outlet liquid storage tank (1.4) are both trapezoidal structure cavities, and the sections are parallel to the middle layer nano porous membrane structure (2); the long bottom surface of the trapezoid structure is parallel to the end part of the steam channel (1.1), and the other short bottom surface is far away from the end part of the steam channel (1.1).
N is a number from 4 to 10.
The lower surface of the lower layer silicon structure (3) corresponds to the ribs (3.2) and the micro-channels (3.1) between the ribs correspond to the hot areas (3.5), and the micro-channels (3.1) between the ribs do not penetrate through the lower surface of the lower layer silicon structure (3), so that the hot areas corresponding to the lower surface of the lower layer silicon structure (3) are of a planar structure.
The invention has the beneficial effects that:
in the novel multilayer composite nano-porous evaporator, a heat source is positioned at the bottom of the evaporator so that heat can be directly dissipated on a substrate of an electronic device, and the novel multilayer composite nano-porous evaporator belongs to an embedded cooling scheme. Compared with the traditional heat dissipation mode of an external radiator, the use of interface materials is reduced, so that the contact thermal resistance is greatly reduced, the junction temperature of the device is greatly reduced, and the safe and stable operation of the electronic device is ensured. The design that a plurality of nano porous membranes (2.1) and a manifold (1.2) are arranged in a staggered and parallel mode can maximize the evaporation area and ensure the mechanical strength of a single nano porous membrane (2.1). The separated design that the manifold (1.2) is used as a flow channel and the micro-channel (3.1) is used as a liquid supply channel not only ensures the liquidity of the liquid, but also avoids the problems of the blockage of the nano-pores (2.2) and the like caused by the liquid flow. The micro-channels (3.1) in the structure provide mechanical support for the nanoporous membrane (2.1) to improve the membrane strength again, and the ribs (3.2) can conduct heat to the phase change interface. Meanwhile, sufficient liquid supply is realized by utilizing the capillary force liquid absorption function of the nano holes (2.2), the pump work consumption in the traditional liquid cooling scheme is greatly reduced, the evaporation process is limited in a thin film evaporation area, and the gas-liquid separation is effectively completed through a plurality of steam channels (1.1). The layered structure of the flow channels within the device also helps to reduce flow resistance. The phase change mode of the liquid in the structure combines the advantages of pool boiling and flow boiling, can meet the heat dissipation and cooling requirements of high heat flux density, avoids instability, and is an ideal cooling mode.
Drawings
Fig. 1 is a schematic view of the overall structure of the present invention.
Fig. 2 is a schematic front exploded view of the overall structure of the present invention.
Fig. 3 is a schematic diagram of the overall structure of the present invention in a back-exploded view.
FIG. 4 is a schematic front view of an upper silicon structure according to the present invention.
FIG. 5 is a schematic view of the backside of the upper silicon structure of the present invention.
FIG. 6 is a schematic view of a middle layer nanoporous structure of the invention.
FIG. 7 is a schematic front view of an underlying silicon structure of the present invention.
FIG. 8 is a schematic backside view of an underlying silicon structure of the present invention.
Fig. 9 is a workflow demonstration of the present invention.
In the figure, 1, an upper silicon structure; 1.1, a steam channel; 1.2, manifold channels; 1.3, an inlet liquid storage tank; 1.4, an outlet liquid storage tank; 2. a middle layer nanoporous structure; 2.1, nano porous membrane; 2.2, nanopores; 3. a lower silicon structure; 3.1, micro-channels; 3.2, ribs; 3.3, a liquid inlet; 3.4, a liquid outlet; 3.5, hot zone.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings, but the present invention is not limited to the following examples.
Example 1
As shown in fig. 1, 2, 3, 4, 5, 6, 7, and 8, a novel multi-layer composite nano-porous evaporator comprises an upper silicon structure (1), a middle nano-porous membrane structure (2), and a lower silicon structure (3). The upper silicon structure is a flow module, which consists of six steam channels (1.1), seven manifold channels (1.2), an inlet liquid storage tank (1.3) and an outlet liquid storage tank (1.4). The middle layer nano porous structure is an evaporation module and consists of six nano porous membranes (2.1) which are uniformly distributed in a nano hole (2.2) array. The lower silicon structure is a liquid supply module which is formed by staggered arrangement of a liquid inlet (3.3), a liquid outlet (3.4), ribs (3.2) and micro-channels (3.1).
The steam channels (1.1) and the manifold channels (1.2) are arranged in a staggered manner, and both sides of the manifold channels (1.2) are communicated with inlet liquid storage tanks and outlet liquid storage tanks which are of symmetrical structures; the middle layer nano porous structure (2) is an evaporation module, the nano porous film (2.2) array is uniformly distributed on the nano porous films (2.1), and the position of each film corresponds to each steam channel (1.1) of the upper layer; the lower-layer silicon structure (3) is a liquid supply module, a liquid inlet (3.3) is communicated with an inlet liquid storage tank (1.3) of the upper layer, a liquid outlet (3.4) is communicated with an outlet liquid storage tank (1.4) of the upper layer, and micro-channels (3.1) with the same volume are formed among ribs (3.2) which are distributed in parallel in the central area. The middle layer nano porous membrane structure (2) is directly obtained by etching the surface of the upper layer silicon structure (1) and is connected with the lower layer silicon structure (3) through bonding.
The composite membrane is formed by compounding three layers of structures with different functions, namely an upper layer silicon structure (1), a middle layer nano porous membrane structure (2) and a lower layer silicon structure (3), and the outer edges of contact surfaces between every two layers are the same in shape and size.
Six steam channels (1.1) and seven manifolds (1.2) are arranged in parallel in a staggered mode in the central area, the steam channels (1.1) penetrate through the upper layer silicon structure (1), and the horizontal area of the steam channels is equal to the area of the single nano porous membrane (2.1).
The nanopore (2.2) arrays are respectively and uniformly arranged on six membranes, and the diameter of a single nanopore is about 200 nm.
The area of the whole micro-channel area corresponds to and is equal to the area of the whole nano porous membrane area of the middle layer and the area of the upper layer steam channel and the manifold area.
The six nanoporous membranes (2.1) are positioned in vertical correspondence with the six vapor channels (1.1) respectively, so that each nanoporous membrane (2.1) has one independent vapor channel (1.1).
The liquid inlet and outlet are positioned at the lower layer, and the inlet and outlet liquid storage tanks and the manifold channel (1.2) are positioned at the upper layer, so that the fluid can complete the flowing process from bottom to top and then flows out from bottom to top.
The manifold channel (1.2) and the micro channel (3.1) have different functions and are independent from each other, so that the separate design of a flow channel and a liquid supply channel is realized.
From the top view, the manifold channel (1.2) and the micro-channel (3.1) are arranged vertically instead of horizontally, which is beneficial to the uniform distribution of the liquid in the micro-channel (3.1).
The novel multilayer composite nanoporous evaporator was assumed to be mounted on a microelectronic device such that the evaporator bottom was in contact with the hot zone (3.5). As shown in fig. 9, the liquid working medium flows into the inlet reservoir (3.3) from the liquid inlet (1.3) through the external liquid supply tube, when passing through the seven manifold channels (1.2), a part of the liquid enters the micro-channels (3.1) of the lower silicon structure (3), and the other part of the liquid flows into the outlet reservoir (1.4) and flows out from the liquid outlet (3.4).
The nano porous membrane (2.1) is positioned above the microchannel (3.1), the action of strong capillary force in the nano pore (2.2) can ensure that the liquid working medium in the microchannel (3.1) is stably supplied into the nano pore (2.2), and meanwhile, the ribs (3.2) conduct heat generated by the hot zone (3.5) of the bottom microelectronic device to six nano porous membranes (2.1), so that the liquid can realize stable film evaporation in the nano pore (2.2), and then gas-liquid separation is effectively finished through six independent steam channels (1.1).
Claims (9)
1. A multilayer composite nano porous evaporator is characterized in that the evaporator generally comprises three layers of structures, namely an upper layer silicon structure (1), a middle layer nano porous membrane structure (2) and a lower layer silicon structure (3); wherein the middle layer nano porous membrane structure (2) is directly processed on the lower surface of the upper layer silicon structure (1), and the lower layer silicon structure (3) is connected with the middle layer nano porous membrane structure (2) through bonding;
the layered silicon structure comprises N steam channels (1.1), N +1 manifold channels (1.2), an inlet liquid storage tank (1.3) and an outlet liquid storage tank (1.4); the N steam channels (1.1) are a plurality of parallel independent rectangular channels, and two ends of each rectangular channel in the length direction are closed; n +1 manifold channels (1.2) are formed among the N steam channels (1.1) and on two side faces of the two outermost steam channels (1.1); an inlet liquid storage tank (1.3) and an outlet liquid storage tank (1.4) are correspondingly arranged at two ends of the N steam channels (1.1) in the length direction; the manifold channel (1.2) is respectively communicated with the inlet liquid storage tank (1.3) and the outlet liquid storage tank (1.4), so that the liquid working medium can flow from the inlet liquid storage tank (1.3) to the outlet liquid storage tank (1.4) through the manifold channel (1.2); the plurality of steam channels (1.1) are distributed among the N +1 manifold channels (1.2) in parallel, so that the steam generated by evaporation can be transported efficiently; only N steam channels (1.1) are exposed on the upper surface of the upper-layer silicon structure, and the N +1 manifold channels (1.2), the inlet liquid storage tank (1.3) and the outlet liquid storage tank (1.4) are all closed;
the middle layer nano porous membrane structure (2) is obtained by etching the lower surface of the upper layer silicon (1), and an independent nano porous membrane (2.1) with nano holes (2.2) is arranged at the lower port of each steam channel (1.1); the positions of the N nano porous membranes (2.1) correspond to the N steam channels (1.1) in the upper silicon structure (1), so that the formed nano porous membrane (2.2) array is uniformly distributed on the N nano porous membranes (2.1);
the lower layer silicon structure (3) comprises ribs (3.2) which are arranged in parallel, micro-channels (3.1) among the ribs, a liquid inlet (3.3) and a liquid outlet (3.4); the liquid inlet (3.3) and the liquid outlet (3.4) are of a symmetrical structure and are correspondingly communicated with the inlet liquid storage tank (1.3) and the outlet liquid storage tank (1.4) in the upper-layer silicon structure (1), so that liquid working media can enter and exit the inlet liquid storage tank (1.3) and the outlet liquid storage tank (1.4) from the liquid inlet (3.3) and the liquid outlet (3.4); the upper surface of the lower layer silicon structure (3) is provided with ribs (3.2) and micro-channels (3.1) among the ribs; the micro-channels (3.1) are formed between the parallel ribs (3.2) and are arranged in parallel, the tops of the ribs (3.2) are in contact with the nano-porous membrane (2.1) in the middle layer, so that a supporting effect is provided for the nano-porous membrane (2.1), and meanwhile, liquid in the micro-channels (3.1) supplies liquid for an evaporation process by utilizing strong capillary force in the nano-pores (2.2);
n is a number from 4 to 10.
2. The multi-layer composite nanoporous evaporator according to claim 1, wherein each nanoporous membrane (2.1) is in conformity with the size of the lower port of the corresponding vapor channel (1.1); the positions of the inlet liquid storage tank (1.3), the outlet liquid storage tank (1.4) and the manifold channel (1.2) which correspond to the middle layer nano porous membrane structure (2) are all vacant and have no corresponding membrane.
3. A multi-layer composite nanoporous evaporator according to claim 1, wherein the length direction of the ribs (3.2) is perpendicular to the length direction of the nanoporous membrane (2.1).
4. The multi-layer composite nanoporous evaporator according to claim 1, wherein two rows of nanopores (2.2) are provided per nanoporous membrane (2.1).
5. The multi-layer composite nano-porous evaporator according to claim 1, characterized in that the corresponding ribs (3.2) on the lower surface of the lower silicon structure (3) and the micro-channels (3.1) between the ribs correspond to the hot zones (3.5), and the micro-channels (3.1) between the ribs do not penetrate through the lower surface of the lower silicon structure (3), so that the hot zones corresponding to the lower surface of the lower silicon structure (3) are a planar structure.
6. The multi-layer composite nano-porous evaporator as recited in claim 1, characterized in that the cross-sections of the inlet reservoir (1.3) and the outlet reservoir (1.4) are both trapezoidal structure cavities, and the cross-section is parallel to the middle layer nano-porous membrane structure (2); the long bottom surface of the trapezoid structure is parallel to the end part of the steam channel (1.1), and the other short bottom surface is far away from the end part of the steam channel (1.1).
7. The multi-layer composite nanoporous evaporator according to claim 1, wherein the plurality of vapor channels (1.1) is six vapor channels (1.1), and the pore size of the single nanopore is 200 nm.
8. The multi-layer composite nanoporous evaporator according to claim 1, wherein the upper silicon structure (1), the middle nanoporous membrane structure (2) and the lower silicon structure (3) have the same shape and size of the outer edge of the contact surface between each layer;
the steam channels (1.1) and the manifolds (1.2) are arranged in parallel in a staggered mode in the central area, the steam channels (1.1) penetrate through the upper layer silicon structure (1), and the horizontal area of the steam channels is equal to that of a single nano porous membrane (2.1);
the area of the whole micro-channel area corresponds to and is equal to the area of the whole nano porous membrane area of the middle layer and the areas of the upper steam channel and the manifold area;
the nano porous membranes (2.1) are respectively positioned corresponding to the steam channels (1.1) in the vertical direction, so that each nano porous membrane (2.1) is provided with an independent steam channel (1.1);
from the top view, the manifold channel (1.2) and the micro-channel (3.1) are arranged vertically instead of horizontally, which is beneficial to the uniform distribution of the liquid in the micro-channel (3.1).
9. A multi-layer composite nanoporous evaporator according to claim 1 wherein, in use: the bottom of the evaporator is contacted with a hot zone (3.5), a liquid working medium flows into an inlet liquid storage tank (3.3) from a liquid inlet (1.3) through an external liquid supply pipe, one part of liquid enters a micro-channel (3.1) of a lower-layer silicon structure (3) when passing through a manifold channel (1.2), and the other part of liquid flows into an outlet liquid storage tank (1.4) and flows out from a liquid outlet (3.4);
the nano porous membrane (2.1) is positioned above the microchannel (3.1), the action of strong capillary force in the nano pore (2.2) can ensure that the liquid working medium in the microchannel (3.1) is stably supplied into the nano pore (2.2), and meanwhile, the rib (3.2) conducts heat generated by the bottom microelectronic device hot zone (3.5) to the nano porous membrane (2.1), so that the liquid can realize stable film evaporation in the nano pore (2.2), and then the gas-liquid separation is effectively finished through the independent steam channel (1.1).
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