CN111596717B - Second-order compensation reference voltage source - Google Patents
Second-order compensation reference voltage source Download PDFInfo
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- CN111596717B CN111596717B CN202010493383.6A CN202010493383A CN111596717B CN 111596717 B CN111596717 B CN 111596717B CN 202010493383 A CN202010493383 A CN 202010493383A CN 111596717 B CN111596717 B CN 111596717B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The invention discloses a second-order compensation reference voltage source.A second-order curvature correction circuit is additionally arranged in a reference voltage source with a first-order temperature coefficient, and comprises a power supply unit, a current bias unit, a band gap reference unit, an output stage unit and an added second-order curvature correction circuit consisting of a triode NPN3 and a resistor R2, wherein the shape of a reference voltage can be adjusted. By adjusting the base voltage of NPN3 and the resistance value of R2, the reference voltage with good temperature coefficient can be obtained.
Description
Technical Field
The invention relates to a voltage stabilizing source, in particular to a second-order compensation reference voltage source, the reference voltage of which can be adjusted to zero temperature drift by using a second-order compensation technology, so that the reference within a working temperature range has small temperature change along with the temperature, has good thermal stability, and belongs to the technical field of integrated circuits.
Background
Precision reference voltage sources are often used in integrated circuit systems, and the precision of the reference voltage source determines the precision of the system output voltage. The power supply system is mostly composed of power devices, heating is inevitable during working, and sometimes the power supply system also needs to work well in an outdoor low-temperature environment in winter, so that a precise reference voltage source is required to have a good temperature coefficient. The traditional temperature curve of the first-order zero temperature coefficient band gap reference is mostly parabolic in the whole temperature range, and sometimes cannot meet the actual requirement, so that the second-order band gap reference needs to be designed for curvature correction.
Disclosure of Invention
The invention aims to solve the problem that the curvature of the zero temperature drift reference of the traditional voltage stabilizing source cannot meet the requirement in the full temperature range, introduce second-order curvature compensation, adjust the waveform shape and reduce the fluctuation of reference voltage when the ambient temperature and the working temperature change.
In order to achieve the purpose, the invention adopts the technical scheme that the second-order compensation reference voltage source is characterized in that a second-order curvature correction circuit is additionally arranged in a reference voltage source with a first-order temperature coefficient, and the reference voltage source circuit with the first-order temperature coefficient comprises a power supply unit, a current bias unit, a band gap reference unit and an output stage unit;
the power supply unit comprises a power supply VDD and a resistor R9, wherein the anode of the power supply VDD is connected with one end of the resistor R9, and the cathode of the power supply VDD is grounded;
the current bias unit comprises a transistor NPN1, a transistor PNP1, a transistor PNP2, a transistor PNP3, a transistor PNP4 and a resistor R1, the other end of the resistor R9 in the power supply unit is connected with the base of a transistor NPN1 and the emitter of a transistor PNP1, the emitter of a transistor PNP2, the emitter of a transistor PNP3 and the emitter of a transistor PNP4, the base of a transistor PNP1 and the base of a transistor PNP2, the base of a transistor PNP3 and the base of a transistor PNP4 are interconnected and connected with the collector of a transistor PNP1 and the collector of a transistor PNP 35 1, and the emitter of a transistor NPN1 is connected with the collector of a transistor PNP2 and the cathode of a power supply VDD through a resistor R1;
the band-gap reference unit comprises a triode PNP, a triode NPN, resistors R, R and R, a collector of the triode NPN, an emitter of the triode PNP and an emitter of the triode PNP are all connected with the other end of the resistor R in the power supply unit, a base of the triode NPN is connected with a base of the triode NPN in the current bias unit, an emitter of the triode NPN is connected with one end of the resistor R, the other end of the resistor R is connected with one end of the resistor R and a base of the triode PNP, a collector of the triode PNP and the other end of the resistor R are all connected with a cathode of a power supply VDD, and an emitter of the triode PNP is connected with a base of the triode NPN and a collector of the triode PNP in the current bias unit, an emitter of the transistor PNP9 is connected with a base of the transistor NPN4 and a collector of a transistor PNP4 in the current bias unit, an emitter of the transistor NPN4 is connected with an emitter of the transistor NPN5 and is connected with a cathode of a power supply VDD through a resistor R7, a base of the transistor PNP5 is connected with a base of the transistor PNP6 and is connected with a collector of the transistor PNP5 and a collector of the transistor NPN4, and a collector of the transistor PNP6 is connected with a collector of the transistor NPN 5;
the output stage unit comprises a triode PNP7, a triode NPN6, a resistor R8 and a capacitor C1, an emitter of the triode PNP7 and a collector of the triode NPN6 are both connected with the other end of the resistor R9 in the power supply unit, a base of the triode PNP7 is connected with a collector of the triode PNP7, a base of the triode NPN6 and one end of the resistor R8 through the capacitor C1, and the other end of the resistor R8 and the emitter of the triode NPN6 are both connected with a cathode of a power supply VDD;
the added second-order curvature correction circuit comprises a triode NPN3 and a resistor R2, a collector of the triode NPN3 is connected with an emitter of a triode NPN2 in the band gap reference unit, a base of the triode NPN3 is connected with a connecting end of a resistor R3 and a resistor R4 in the band gap reference unit, and the emitter of the triode NPN3 is connected with a cathode of a power supply VDD through a resistor R2;
the base of the transistor NPN1 in the current bias unit and the connection end of the resistor R9 in the power supply unit generate a reference voltage Verf.
In order to enhance the driving capability of the output stage, a transistor PNP10, a transistor PNP11, a transistor NPN7, a transistor NPN8 and a resistor R10 may be additionally provided between the transistor NPN6 and the transistor PNP7 and the resistor R8 in the output stage unit, an emitter of the transistor PNP10 and an emitter of the transistor PNP11 are connected to an emitter of the transistor PNP7, a base of the transistor PNP10 and a base of the transistor PNP11 are interconnected and connected to a collector of the transistor NPN7, a base of the transistor NPN7 and a collector of the transistor PNP7 and a connecting end of the resistor R8 are connected, an emitter of the NPN transistor 7 and an emitter of the NPN transistor 8 are connected and connected to a cathode of the power supply VDD through a resistor R10, and a base of the transistor NPN8 and a collector are interconnected and connected to a collector of the transistor PNP11 and a base of the transistor NPN 6.
Preferably, the emitter perimeter of the triode PNP11 is n times the emitter perimeter of the triode PNP10, and n > 1.
Preferably, if the minimum working current of the second-order compensation reference voltage source is Imin, the maximum working current is Imax, and the reference voltage is Vref, the value range of the resistor R9 is as follows:
further, the temperature waveform of the reference voltage can be improved by adjusting the value of the resistor R2 and adjusting the resistance value proportional relation between the resistors R3 and R4, R5 and R6 in the four voltage dividing resistors; base voltage of triode NPN3
VBEThe emitter junction voltage of the transistor NPN2 is increased by increasing the resistor R3 and decreasing the resistors R4, R5 and R6, and the base level voltage V of the transistor NPN3BNPN3The compensation effect on the reference voltage in a high-temperature interval is good; the resistor R3 is reduced, and the resistors R4, R5 and R6 are increased, so that the base-level voltage of the triode NPN3 is improved, and the compensation effect on the reference voltage in a low-temperature interval is good; the larger the value of the resistor R2 is, the smaller the collector current of the triode NPN3 tube is, the lower the adjusting intensity of the second-order compensation is, and the lower the waveform upwarp degree of the reference voltage in a high-temperature interval is; and conversely, the smaller the value of the resistor R2 is, the higher the waveform upwarp degree of the reference voltage in the high-temperature interval is, the value of the resistor R2 is adjusted, and the upwarp amplitude of the reference voltage in the high-temperature interval is controlled, so that the difference between the highest point and the lowest point in a wave curve of the reference voltage along with the temperature change in the full-temperature range is as small as possible, and the reference voltage with a lower temperature coefficient is obtained.
Preferably, the base voltage V of the transistor NPN3BNPN3The value range at normal temperature is 200 mV-750 mV; the resistance R2 ranges from 10K omega to 880K omega.
The invention has the advantages and obvious effects that: in the prior art, a band-gap reference voltage source with a first-order temperature coefficient can only obtain a parabolic reference voltage temperature curve. The curvature compensation can be performed on the traditional band gap reference by adjusting the value of a series resistor R2 from an emitter of a second-order compensation circuit NPN3 to a cathode and adjusting the resistance proportional relation of the sum of R3, R4, R5 and R6 in four divider resistors connected with the base of an NPN3, the temperature waveform of the reference voltage can be improved, the R2 determines the upwarp amplitude of the collector current of the NPN2 entering a high-temperature range, and the larger the resistor R2 is, the smaller the upwarp amplitude is.
Drawings
FIG. 1 is a circuit diagram of the present invention;
FIG. 2 is a circuit diagram of the present invention based on FIG. 1, after the driving capability of the output stage is enhanced;
FIG. 3 is a first order bandgap reference temperature curve without second order compensation;
FIG. 4 is a bandgap reference temperature curve with second order compensation set;
FIG. 5 is a NPN3 collector current curve corresponding to the reference temperature curve of FIG. 4;
FIG. 6 is another second order bandgap reference temperature curve of the modified R2 and NPN3 base voltages;
fig. 7 is a NPN3 collector current curve corresponding to the reference temperature curve of fig. 6.
Detailed Description
As shown in fig. 1, the transistor NPN1, the resistor R1, the current mirror transistor PNP1, the PNP2, the PNP3, and the PNP4 are current biased, the transistor NPN2, the resistor R3, the resistor R4, the resistor R5, the transistor R6, the resistor R7, the PNP8, the PNP9, the NPN4, the NPN5, the PNP5, and the PNP6 are bandgap references, the transistors NPN3 and R2 are second-order curvature correction, and the PNP7, NPN6, C1, and R8 are output stages. The upper and lower limits of the VDD voltage are the upper and lower limits of the working voltage of a reference voltage source, the VDD anode is applied with voltage to one end of a resistor R9, the other end of the resistor R9 is in short circuit with the reference voltage Vref, and the VDD cathode end is grounded. After the circuit enters a normal working state, the PNP3 is the same as the PNP4, so that the currents flowing into the PNP8 are the same as the PNP9, and the emitter junction voltages of the PNP8 and the PNP9 are the same, thereby playing a role of level shifting. PNP5 and PNP6 are lateral PNP tubes of identical unit shape with an emitter perimeter ratio of n 1: n2, the ratio of the currents flowing into the NPN4 and the NPN5, i.e., n 1: the emitter area ratio of n2, NPN4, and NPN5 is n 3: n 4. Then the formula of the reference voltage is calculated as:
wherein VTThe thermal voltage being a positive temperature coefficient, VBEThe emitter junction voltage of the triode NPN2 is negative temperature coefficient, and V can be changed by adjusting the proportion of the resistor and the triodeTThe coefficient of this term is such that the positive temperature coefficient and the negative temperature coefficient are in phaseAnd offsetting to obtain a zero temperature drift reference.
Fig. 2 is a driving enhancement circuit derived from fig. 1, and PNP10 and PNP11, NPN7 and NPN8 and resistor R10 are added to the output stage. The perimeter of an emitter of the PNP11 is n times of that of the PNP10, the collector current of the PNP11 is amplified in the same proportion, and the value of n can be a number larger than 1 according to needs. Thus, the base current of the NPN6 is amplified, and the current driving capability of the NPN6 is enhanced.
As shown in FIG. 3, if there is no second-order compensation circuits NPN3 and R2, the waveform of the zero-temperature-drift reference has a parabolic reference voltage curve in the whole temperature range, the reference voltage fluctuates from 1.2475V to 1.26V, and the fluctuation range reaches 12.5 mV. The NPN3 and the resistor R2 play a role in second-order compensation curvature correction in the circuit, and the base-level voltage of the NPN3 tube playing a role in second-order compensation regulation is converted from zero-temperature-drift reference voltage and NPN2 emitter junction conducting voltage V with negative temperature coefficientBEAfter the difference is made, the resistance voltage division is generated, the resistance voltage division does not change along with the temperature, and the difference between the reference voltage and the emitter junction conduction voltage is a positive temperature coefficient, so that the base voltage of the NPN3 is a positive temperature coefficient, which can be expressed as the following formula:
since the emitter turn-on voltage of the triode NPN3 is a negative temperature coefficient, the base voltage of the NPN3 can be set by adjusting the proportional relationship between R3 and R4, R5 and R6, and further adjusting the transition temperature point at which the collector current of the second-order compensation NPN3 rises from zero. The R3 is increased, the R4, the R5 and the R6 are reduced, the base voltage of the NPN3 can be reduced, the transition temperature point of the collector current of the NPN3 which is increased from zero is increased, and the compensation effect on the reference voltage in a high-temperature interval is good; the R3 is reduced, and the R4, the R5 and the R6 are increased, so that the base voltage of the NPN3 can be improved, the transition temperature point of the collector current of the NPN3 which is increased from zero is reduced, and the compensation effect on the reference voltage in the low-temperature range is better. The larger the value of the resistor R2 is, the smaller the collector current of the NPN3 tube is, and the lower the adjustment intensity of the second-order compensation is, so that the waveform upwarp degree of the reference voltage in a high-temperature interval is lower; conversely, the resistance RThe smaller the value 2 is, the higher the waveform upwarp degree of the reference voltage in the high-temperature interval is, the value of R2 is properly adjusted, and the upwarp amplitude of the reference voltage in the high-temperature interval is controlled, so that the difference between the highest point and the lowest point in a wave curve of the reference voltage changing along with the temperature in the full-temperature range is as small as possible, and the reference voltage with a lower temperature coefficient is obtained. The resistor R2 may typically range from 10K Ω to 880K Ω. Base voltage V of NPN3BNPN3The value at normal temperature is set to be 200 mV-750 mV, usually about 550 mV. This allows the NPN3 to turn off at low temperatures and turn on at elevated temperatures due to the negative temperature coefficient of the emitter junction turn-on voltage. When the chip is in a low-temperature state, the NPN3 cuts off the collector without current, the reference voltage is not influenced, the NPN3 is gradually turned on along with the increase of the temperature, the collector current of the NPN3 is larger and larger, the current flows through the emitter of the NPN2, and the formula shows that the current does not flow through the emitter of the NPN2
The emitter junction voltage drop of the NPN2 is increased, the descending trend of the reference voltage along with the high-temperature interval of the temperature change curve is restrained, even the reference voltage curve is changed into a wave shape from a parabola shape, the difference between the maximum value and the minimum value of the reference voltage in the whole temperature range is reduced, and the temperature coefficient of the reference voltage is improved.
The wavy line in fig. 4 is a curve of the reference voltage with temperature after the second-order compensation, and it can be seen from this curve that the maximum and minimum values of the fluctuation of the reference voltage are 1.2542V and 1.2504V, respectively, and the voltage change is 3.8mV in the whole temperature range. Compare FIG. 3 with 12.5mV change in voltage over the full temperature range. The temperature change degree of the reference voltage after the second-order compensation in fig. 4 is obviously smaller than that in fig. 3, and the second-order compensation obviously improves the temperature coefficient of the reference voltage.
Fig. 5 is a NPN3 collector current curve corresponding to the reference voltage of fig. 4. Fig. 7 is a NPN3 collector current curve corresponding to the reference voltage of fig. 6. By adjusting the proportional relation between R3 and R4, R5 and R6 to set the base voltage of NPN3, the inflection point of the collector current of NPN3 changing along with temperature can be directly determined, namely the inflection point of the current changing from near zero to obviously increased. The higher the base voltage setting of NPN3, the lower the knee temperature.
The base voltage of the NPN3 corresponding to fig. 5 is set higher than the base voltage of the NPN3 corresponding to fig. 7, and comparing fig. 5 and 7 shows that the inflection point of the initial increase of the current of fig. 5 is around 50 ℃, and the inflection point of the initial increase of the current of fig. 7 is around 70 ℃. The collector current of NPN3 is ultimately used to affect the reference voltage, so comparing fig. 4 and 6, the temperature at the inflection point of fig. 6 for the fig. 7 current drops to 95 ℃ for the reference voltage of fig. 6, which is 75 ℃ higher than the temperature at the inflection point of fig. 4 for the fig. 5 current, which drops to an increase.
The resistor R2 connected in series under the emitter of the NPN3 determines the upwarp amplitude of the collector current of the NPN2 entering a high-temperature range, and the larger the resistor R2 is, the smaller the upwarp amplitude is. The R2 value corresponding to fig. 5 is greater than the R2 value corresponding to fig. 7, so the NPN3 collector current value of fig. 5 is lower than the NPN3 collector current value of fig. 7 near 150 ℃. Which in turn affects the reference voltage curves of fig. 4 and 6. The collector current of NPN3 at high temperature in the reference voltage of fig. 4 is slightly lower, so the lifting force on the curve is insufficient, so the curve turns downward, while at high temperature in fig. 6 the collector current of NPN3 is larger, the lifting force on the curve is larger, and the reference voltage curve turns upward all the way without turning downward. The base voltage of the NPN3 is adjusted to correspond to the position of the voltage dividing resistor, the base voltage of the NPN3 at normal temperature is changed, and the adjusting resistor R2 is matched, so that the reference voltage variation curve with temperature and the collector current curve of the NPN3 shown in fig. 4 and 6 can be obtained, and the reference voltage with good temperature coefficient can be obtained.
Claims (5)
1. A second-order compensation reference voltage source is characterized in that a second-order curvature correction circuit is additionally arranged in a reference voltage source with a first-order temperature coefficient, and the reference voltage source circuit with the first-order temperature coefficient comprises a power supply unit, a current bias unit, a band gap reference unit and an output stage unit;
the power supply unit comprises a power supply VDD and a resistor R9, wherein the anode of the power supply VDD is connected with one end of the resistor R9, and the cathode of the power supply VDD is grounded;
the current bias unit comprises a transistor NPN1, a transistor PNP1, a transistor PNP2, a transistor PNP3, a transistor PNP4 and a resistor R1, the other end of the resistor R9 in the power supply unit is connected with the base of a transistor NPN1 and the emitter of a transistor PNP1, the emitter of a transistor PNP2, the emitter of a transistor PNP3 and the emitter of a transistor PNP4, the base of a transistor PNP1 and the base of a transistor PNP2, the base of a transistor PNP3 and the base of a transistor PNP4 are interconnected and connected with the collector of a transistor PNP1 and the collector of a transistor PNP 35 1, and the emitter of a transistor NPN1 is connected with the collector of a transistor PNP2 and the cathode of a power supply VDD through a resistor R1;
the band-gap reference unit comprises a triode PNP, a triode NPN, resistors R, R and R, a collector of the triode NPN, an emitter of the triode PNP and an emitter of the triode PNP are all connected with the other end of the resistor R in the power supply unit, a base of the triode NPN is connected with a base of the triode NPN in the current bias unit, an emitter of the triode NPN is connected with one end of the resistor R, the other end of the resistor R is connected with one end of the resistor R and a base of the triode PNP, a collector of the triode PNP and the other end of the resistor R are all connected with a cathode of a power supply VDD, and an emitter of the triode PNP is connected with a base of the triode NPN and a collector of the triode PNP in the current bias unit, an emitter of the transistor PNP9 is connected with a base of the transistor NPN4 and a collector of a transistor PNP4 in the current bias unit, an emitter of the transistor NPN4 is connected with an emitter of the transistor NPN5 and is connected with a cathode of a power supply VDD through a resistor R7, a base of the transistor PNP5 is connected with a base of the transistor PNP6 and is connected with a collector of the transistor PNP5 and a collector of the transistor NPN4, and a collector of the transistor PNP6 is connected with a collector of the transistor NPN 5;
the output stage unit comprises a triode PNP7, a triode NPN6, a resistor R8 and a capacitor C1, an emitter of the triode PNP7 and a collector of the triode NPN6 are both connected with the other end of the resistor R9 in the power supply unit, a base of the triode PNP7 is connected with a collector of the triode PNP7, a base of the triode NPN6 and one end of the resistor R8 through the capacitor C1, and the other end of the resistor R8 and the emitter of the triode NPN6 are both connected with a cathode of a power supply VDD;
the added second-order curvature correction circuit comprises a triode NPN3 and a resistor R2, a collector of the triode NPN3 is connected with an emitter of a triode NPN2 in the band gap reference unit, a base of the triode NPN3 is connected with a connecting end of a resistor R3 and a resistor R4 in the band gap reference unit, and the emitter of the triode NPN3 is connected with a cathode of a power supply VDD through a resistor R2;
the base electrode of a triode NPN1 in the current bias unit and the connection end of a resistor R9 in the power supply unit generate a reference voltage Verf;
a triode PNP10, a triode PNP11, a triode NPN7, a triode NPN8 and a resistor R10 are additionally arranged between a triode NPN6, a triode PNP7 and a resistor R8 in an output stage unit, an emitter of a triode PNP10 and an emitter of a triode PNP11 are connected with an emitter of a triode PNP7, a base of a triode PNP10 and a base of a triode PNP11 are interconnected and connected with a collector of a triode NPN7, a base of a triode NPN7 is connected with a collector of a triode PNP7 and a connecting end of a resistor R8, an emitter of an NPN triode 7 and an emitter of an NPN triode 8 are connected and connected with a cathode of a power supply VDD through a resistor R10, and a base of a triode NPN8 and a collector are interconnected and connected with a collector of a triode PNP11 and a base of an NPN 6.
2. The second-order offset voltage reference of claim 1, wherein the emitter perimeter of the triode PNP11 is n times the emitter perimeter of triode PNP10, n > 1.
3. The second-order compensation reference voltage source according to claim 1 or 2, wherein the minimum working current of the second-order compensation reference voltage source is Imin, the maximum working current is Imax, and the reference voltage is Vref, and the value range of the resistor R9 is as follows:
4. the second-order compensation reference voltage source according to claim 1 or 2, wherein the temperature waveform of the reference voltage can be improved by adjusting the value of the resistor R2 and the proportional relationship between the resistance values of the resistors R3 and R4, R5 and R6 in the four voltage dividing resistors; base voltage of triode NPN3
VBEThe emitter junction voltage of the transistor NPN2 is increased by increasing the resistor R3 and decreasing the resistors R4, R5 and R6, and the base level voltage V of the transistor NPN3BNPN3The compensation effect on the reference voltage in a high-temperature interval is good; the resistor R3 is reduced, and the resistors R4, R5 and R6 are increased, so that the base-level voltage of the triode NPN3 is improved, and the compensation effect on the reference voltage in a low-temperature interval is good; the larger the value of the resistor R2 is, the smaller the collector current of the triode NPN3 tube is, the lower the adjusting intensity of the second-order compensation is, and the lower the waveform upwarp degree of the reference voltage in a high-temperature interval is; and conversely, the smaller the value of the resistor R2 is, the higher the waveform upwarp degree of the reference voltage in the high-temperature interval is, the value of the resistor R2 is adjusted, and the upwarp amplitude of the reference voltage in the high-temperature interval is controlled, so that the difference between the highest point and the lowest point in a wave curve of the reference voltage along with the temperature change in the full-temperature range is as small as possible, and the reference voltage with a lower temperature coefficient is obtained.
5. The second-order compensated reference voltage source of claim 4, wherein the base voltage V of the transistor NPN3BNPN3The value range at normal temperature is 200 mV-750 mV; the resistance R2 ranges from 10K omega to 880K omega.
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| CN1987713A (en) * | 2005-12-23 | 2007-06-27 | 深圳市芯海科技有限公司 | Reference voltage source for low temperature coefficient with gap |
| CN101609344A (en) * | 2009-07-07 | 2009-12-23 | 东南大学 | The CMOS subthreshold high-order temperature compensation bandgap reference circuit |
| CN102183991A (en) * | 2011-03-18 | 2011-09-14 | 清华大学 | Ultra-low power consumption band gap reference source |
| CN102323842A (en) * | 2011-05-13 | 2012-01-18 | 电子科技大学 | Band-gap voltage reference source for high-order temperature compensation |
| CN102591394A (en) * | 2012-02-24 | 2012-07-18 | 电子科技大学 | Bandgap reference voltage source |
| CN202433799U (en) * | 2012-02-24 | 2012-09-12 | 电子科技大学 | Band-gap reference voltage source |
| CN103810311A (en) * | 2012-11-13 | 2014-05-21 | 上海华虹宏力半导体制造有限公司 | Method for simulating bipolar transistor and bipolar transistor simulating circuit |
| CN102981545A (en) * | 2012-12-03 | 2013-03-20 | 东南大学 | Band gap reference voltage circuit with high-order curvature compensation |
| CN104102265A (en) * | 2014-06-30 | 2014-10-15 | 电子科技大学 | Current source circuit with high-precision temperature compensation |
| CN204347681U (en) * | 2014-11-27 | 2015-05-20 | 广州市力驰微电子科技有限公司 | A kind of reference voltage source with high-order compensation |
| CN107589775A (en) * | 2017-10-24 | 2018-01-16 | 南京微盟电子有限公司 | A kind of reference voltage source of positive temperature coefficient current compensation |
| CN207623828U (en) * | 2017-12-12 | 2018-07-17 | 北京时代民芯科技有限公司 | A kind of band-gap reference circuit of integrated temperature protection and curvature compensation function |
| CN108646845A (en) * | 2018-05-31 | 2018-10-12 | 东莞赛微微电子有限公司 | Reference voltage circuit |
| CN109375697A (en) * | 2018-12-24 | 2019-02-22 | 中国电子科技集团公司第五十八研究所 | A kind of temperature drift correcting and adjusting circuit for second order curvature standard of compensation source |
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