CN115857601A - High-performance band-gap reference circuit - Google Patents
High-performance band-gap reference circuit Download PDFInfo
- Publication number
- CN115857601A CN115857601A CN202211566786.4A CN202211566786A CN115857601A CN 115857601 A CN115857601 A CN 115857601A CN 202211566786 A CN202211566786 A CN 202211566786A CN 115857601 A CN115857601 A CN 115857601A
- Authority
- CN
- China
- Prior art keywords
- circuit
- band
- mos tube
- resistor
- circuit unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Control Of Electrical Variables (AREA)
Abstract
The invention discloses a high-performance band-gap reference circuit, which is started by a starting circuit, then a core circuit module outputs a reference voltage which passes through a curvature supplement circuit and reduces a temperature drift coefficient, the reference voltage is output by a two-stage buffer, common gain amplification is carried out on a first-stage buffer, the load capacity is improved, and single-end output is changed into differential output in the two-stage buffer, so that the applicability of the circuit is improved; in addition, a regulating circuit unit is additionally arranged, the circuit can still maintain a relatively stable output structure in the face of errors generated in the manufacturing process under the control of a resistor array in the regulating circuit unit, under the work of the buffer, the whole reference voltage module finally provides a stable differential reference voltage, and four stable current sources are output as bias currents. The circuit belongs to a low-power-consumption circuit, can reduce the overall power consumption of the circuit under the condition of improving the circuit precision, and can be applied to various fields.
Description
Technical Field
The invention belongs to the field of analog circuit design, and particularly relates to a high-performance band-gap reference circuit.
Background
The band-gap reference voltage source is used for providing a stable voltage source which is not easily influenced by power supply voltage and temperature change for other circuits, and is the basis of the design of an analog circuit and a digital circuit. The traditional band-gap reference source is gradually not suitable for various high-performance systems with high requirements on the reference source due to the factors of high working voltage, large temperature drift coefficient, incapability of adjusting, errors generated in the manufacturing process and the like.
Therefore, it is necessary to develop a method capable of reducing the temperature drift coefficient of the circuit, reducing the influence of the temperature drift on the circuit, and improving the precision of the circuit; the high-performance band-gap reference circuit improves the load capacity of the circuit.
Disclosure of Invention
In order to solve the technical problems, the invention adopts the following technical scheme:
a high-performance band-gap reference circuit comprises a band-gap reference core module and a buffer module, wherein the band-gap reference core module is connected with a preset power supply voltage and outputs a preset reference voltage; the preset reference voltage outputs a preset differential reference voltage through the buffer module.
Preferably, the bandgap reference core module includes a bandgap reference core circuit unit and a curvature correction circuit unit, the bandgap reference core circuit unit is connected with the curvature correction circuit unit, and the preset power voltage outputs the preset reference voltage through the bandgap reference core circuit unit and the curvature correction circuit unit.
Preferably, the band-gap reference core module further comprises a starting circuit unit, an input end of the starting circuit unit is connected with an output end of the band-gap reference core module, an output end of the starting circuit unit is connected to the band-gap reference core circuit unit, and the starting circuit unit is used for providing a starting signal for the band-gap reference core circuit unit.
Preferably, the starting circuit comprises a phase inverter and an MOS transistor M4, the output end of the band-gap reference core module is connected to the input end of the phase inverter, the output end of the phase inverter is connected to the gate of the MOS transistor M4, the source of the MOS transistor M4 is grounded, and the drain of the MOS transistor M4 is connected to the band-gap reference core circuit unit.
Preferably, the bandgap reference core module further includes an adjusting circuit unit connected to the output end of the bandgap reference core module, and adjusts the output preset reference voltage.
Preferably, the adjusting circuit unit includes a preset number of resistors arranged in series, and each resistor is connected in parallel with one MOS transistor.
Preferably, the buffer module includes a primary buffer unit and a secondary buffer unit, and the preset reference voltage is gain-amplified by the primary buffer unit and then outputs a preset differential reference voltage by the secondary buffer unit.
Preferably, the band-gap reference core circuit unit includes a first amplifier, a MOS transistor M1, a MOS transistor M2, a MOS transistor M3, a transistor Q1, a transistor Q2, a transistor Q3, a resistor RCL1, a resistor RCL2, a resistor R1, and a resistor R2, sources of the MOS transistor M1, the MOS transistor M2, and the MOS transistor M3 are connected to a preset power supply voltage, gates of the MOS transistor M1, the MOS transistor M2, and the MOS transistor M3 are connected to an output terminal of the first amplifier, a drain of the MOS transistor M1 is connected to a positive input terminal of the first amplifier and one end of the resistor R1 through the resistor RCL1, another end of the resistor R1 is connected to an emitter of the transistor Q1, a drain of the MOS transistor M2 is connected to an inverted input terminal of the first amplifier and an emitter of the transistor Q2 through the resistor RCL2, bases and collectors of the transistor Q1, the transistor Q2, and the transistor Q3 are connected to a GND, and the drain of the MOS transistor M3 is used as a band-gap reference core output module.
Preferably, the curvature correction circuit unit includes a second amplifier, a MOS transistor M5, a MOS transistor M6, a resistor R3, a resistor R4, and a transistor Q4, where the source electrodes of the MOS transistor M5 and the MOS transistor M6 are connected to and connected to a preset power voltage, the gates of the MOS transistor M5 and the MOS transistor M6 are connected to and connected to the output end of the second amplifier, the inverting input end of the second amplifier is connected to the drain electrode of the MOS transistor M3, the non-inverting input end of the second amplifier is connected to the drain electrode of the MOS transistor M5 and one end of the resistor R3, the drain electrode of the MOS transistor M6 is connected to one end of the resistor R4 and the emitter electrode of the transistor Q4, the base electrode and the collector electrode of the transistor Q4 and the other end of the resistor R3 are connected to GND, and the other end of the resistor R4 is connected to the emitter electrode of the transistor Q3.
Preferably, a single-stage operational amplifier is adopted for both the first amplifier and the second amplifier.
The invention has the beneficial effects that: the invention provides a high-performance band-gap reference circuit.A high-order curvature compensation correction circuit module is arranged, so that the temperature drift coefficient of the circuit can be reduced, the influence of the temperature drift on the circuit is reduced, and the precision of the circuit is improved; the primary buffer adopts a chopper amplifier, so that the output load capacity of the reference source is improved; the secondary buffer adopts a fully differential amplifier as a buffer, and changes single-end output into differential output; in addition, a Trim adjusting unit is added, and the Trim adjusting unit is mainly used for improving errors generated by a manufacturing process during manufacturing of the circuit, determining resistance and precision required by circuit trimming and repairing, and reducing the errors. The band-gap reference circuit provided by the invention can keep a relatively stable output structure in the face of errors generated in the manufacturing process under the control of the adjusting resistor array; in addition, under the operation of the buffer, the whole reference voltage module finally provides stable differential reference voltage, and four stable current sources are output as bias current. The circuit belongs to a low-power-consumption circuit, can reduce the overall power consumption of the circuit under the condition of improving the circuit precision, and can be applied to various fields.
Drawings
FIG. 1 is a circuit diagram of a bandgap reference core module according to an embodiment of the present invention;
FIG. 2 is a circuit diagram of a bandgap reference core circuit unit in an embodiment of the present invention;
FIG. 3 is a circuit diagram of a curvature correction circuit unit according to an embodiment of the present invention;
FIG. 4 is a circuit diagram of a first-stage buffer unit according to an embodiment of the present invention;
FIG. 5 is a circuit diagram of a two-level buffer unit according to an embodiment of the present invention;
FIG. 6 is a circuit diagram of a unit of a start-up circuit according to an embodiment of the present invention;
fig. 7 is an equivalent circuit diagram of a Trim adjustment unit in an embodiment of the present invention;
fig. 8 is a circuit diagram of a single-stage operational amplifier circuit according to an embodiment of the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings. The following examples are presented to enable one of ordinary skill in the art to more fully understand the present invention and are not intended to limit the invention in any way.
A high-performance band-gap reference circuit comprises a band-gap reference core module and a buffer module, wherein the band-gap reference core module is connected with a preset power supply voltage and outputs a preset reference voltage; the preset reference voltage outputs a preset differential reference voltage through the buffer module, and the single-ended reference source is changed into the differential reference source while the load function of the reference source is improved.
As shown in fig. 1, the bandgap reference core module includes a bandgap reference core circuit unit and a curvature correction circuit unit, the bandgap reference core circuit unit is connected to the curvature correction circuit unit, and a preset power voltage is outputted through the bandgap reference core circuit unit and the curvature correction circuit unit.
Specifically, the design used by the band gap reference core circuit unit adopts a summation mode of negative temperature coefficient voltage of a first-order positive temperature coefficient voltage compensation bipolar transistor. The core circuit accurately copies the base voltage of a bipolar transistor to a band-gap reference core circuit unit I by utilizing the voltage clamping function of the input end of an operational amplifier PTAT On the current generation branch, a voltage difference Δ V with a first positive correlation with the temperature is formed on R1 BE And obtain I PTAT The current, copied by the current mirror, is summed to an output reference voltage at the emitter-base voltage of the bipolar transistor on which the positive temperature coefficient voltage is finally formed on the output path R2. As shown in fig. 2, the bandgap reference core circuit unit includes a first amplifier, a MOS transistor M1, a MOS transistor M2, a MOS transistor M3, a transistor Q1, a transistor Q2, a transistor Q3, a resistor RCL1, a resistor RCL2, a resistor R1, and a resistor R2, the sources of the MOS transistor M1, the MOS transistor M2, and the MOS transistor M3 are connected to a preset power voltage, the gates of the MOS transistor M1, the MOS transistor M2, and the MOS transistor M3 are connected to the output terminal of the first amplifier, the drain of the MOS transistor M1 is connected to the non-inverting input terminal of the first amplifier and one end of the resistor R1 through the resistor RCL1, the other end of the resistor R1 is connected to the emitter of the transistor Q1, the drain of the MOS transistor M2 is connected to the inverting input terminal of the first amplifier and the emitter of the transistor Q2 through the resistor RCL2, the bases and collectors of the transistors Q1, Q2, and Q3 are connected, and the drain of the MOS transistor M3 is connected to the emitter of the transistor Q3 through the resistor R2The emitter is connected, and the drain of the MOS tube M3 is used as the output end of the band-gap reference core module to output a preset reference voltage.
In the core circuit, three PMOS tubes M1-M3 are used as current mirrors, the length-to-width ratios of the three PMOS tubes are the same, the values of RCL1 and RCL2 are the same as R2, and the function of the current mirrors is to reduce the channel length modulation effect of the PMOS current mirrors and enable the three tubes to be in the same environment as much as possible. The three transistors Q1, Q2 and Q3 are all selected to be PNP transistors, because compared with NPN transistors, a P-type semiconductor is generally used as a substrate in a standard CMOS process, and PNP is a parasitic device in the standard CMOS process, the manufacturing is easier and the performance is stable. Wherein the number of BJTs contained in Q1, Q2 is set to 8:1, this is to have good matching property in the subsequent layout design. The input of the amplifier is for clamping the voltage to equalize the voltages at points X and Y.
The curvature correction circuit unit adopts high-order curvature compensation to reduce the temperature drift coefficient of the band gap reference source so as to further reduce the temperature drift coefficient; since the reference core circuit adopts a classical first-order temperature drift compensation circuit, and the PTAT current generation circuit has effective offset to the first-order part in the reference voltage source, the curvature correction circuit is mainly provided for adjusting the high-order part in the temperature drift function. The reference voltage is copied to the point A by utilizing the clamping action of the amplifier, the current which is theoretically irrelevant to the temperature is generated by the resistor R1 and is copied to the path where the Q4 is positioned by the current mirror,
as shown in fig. 3, the curvature correction circuit unit includes a second amplifier, a MOS transistor M5, a MOS transistor M6, a resistor R3, a resistor R4, and a transistor Q4, wherein source electrodes of the MOS transistor M5 and the MOS transistor M6 are connected to a preset power voltage, gates of the MOS transistor M5 and the MOS transistor M6 are connected to an output terminal of the second amplifier, an inverting input terminal of the second amplifier is connected to a drain electrode of the MOS transistor M3, a non-inverting input terminal of the second amplifier is connected to a drain electrode of the MOS transistor M5 and one end of the resistor R3, a drain electrode of the MOS transistor M6 is connected to one end of the resistor R4 and an emitter electrode of the transistor Q4, a base electrode and a collector electrode of the transistor Q4 and the other end of the resistor R3 are connected to GND, and the other end of the resistor R4 is connected to the emitter electrode of the transistor Q3.
The measurement of the performance of the operational amplifier is generally judged by the following indexes.
Open loop gain: the open loop gain is a ratio of an output voltage to an input voltage obtained by the operational amplifier without a feedback loop, the higher the open loop gain is, the higher the negative feedback precision is, and in order to obtain a better effect, the larger the open loop gain is, the better the open loop gain is required to be.
Bandwidth: the bandwidth of an operational amplifier is a measure of the range of signals that the amplifier processes, and the magnitude of the bandwidth indicates how often the operational amplifier can process the signal. The frequency corresponding to the open loop gain of the op-amp when the open loop gain decreases from the maximum value of Av to 0.707Av is called the 3dB bandwidth, and the frequency corresponding to the open loop gain when the Av decreases to 0dB is called the unit bandwidth.
Phase margin: the phase margin is a quantity describing whether a negative feedback system is stable or not, and is calculated by the difference between the phase of the output signal of the amplifier and 180 DEG time when the gain is 0 dB. Generally, the phase margin of the designed operational amplifier needs to be over 60 ° to ensure the stability of the whole circuit.
And the first amplifier and the second amplifier adopt single-stage operational amplifiers. The operational amplifier adopts a single-stage operational amplifier, and the single-stage operational amplifier has the advantages that the operational amplifier gain can be improved, and the number of mos tubes is reduced to ensure power consumption; the operational amplifiers of the first amplifier and the second amplifier comprise 9 MOS transistors M7-M15, as shown in fig. 8, the sources of M10, M11, and M12 are connected with Vdd after being connected with each other, the gates of M11 and M12 are connected with the drain of M13 after being connected with each other, the gate of M11 is connected with the drain, the drain of M12 is connected with the gate of M10 and the drain of M14 to be used as the output terminal Vout of the amplifier; the drain electrode of M10 is connected with the drain electrodes of M7 and M8 and the gate electrodes of M9 and M15, the gate electrode of M13 and the gate electrode of M7 are connected with the Vi + voltage input end, namely, the non-inverting input end of the amplifier, the source electrodes of M13 and M14 are connected with each other and then connected with the drain electrode of M15, and the gate electrode of M14 and the gate electrode of M8 are connected and then connected with the Vi-voltage input end, namely, the inverting input end of the amplifier; the source of M9 and the source of M5 are connected to GND. The NMOS transistors M7 and M8 are almost in the same environment as the NMOS transistors M13 and M14, so that the drain voltages of the NMOS transistors M7 and M8 are almost the same as those of the NMOS transistors M13 and M14, the drain voltages of the PMOS transistors M10 and M11 are approximate to that of the PMOS transistors M12, and the mismatch problems caused by channel length modulation effect, short channel effect and the like are reduced.
In addition, the band-gap reference core module further comprises a starting circuit unit, the input end of the starting circuit unit is connected with the output end of the band-gap reference core module, the output end of the starting circuit unit is connected to the band-gap reference core circuit unit, and the starting circuit unit is used for providing a starting signal for the band-gap reference core circuit unit. As shown in fig. 6, the start-up circuit includes an inverter and a MOS transistor M4, the output end of the bandgap reference core module is connected to the input end of the inverter, the output end of the inverter is connected to the gate of the MOS transistor M4, the source of the MOS transistor M4 is grounded, and the drain of the MOS transistor M4 is connected to the bandgap reference core circuit unit, that is, the drain of the MOS transistor M4 is connected to the output end of the first amplifier.
In the starting circuit, because the bandgap reference circuit may have one or more static operating points when in operation, and the circuit is stable at any degenerate point, but there is often only one degenerate point required by the operation of the reference source circuit, in order to make the circuit get rid of the non-operating degenerate point, the starting circuit needs to be designed, and after the circuit starts to operate normally, the starting circuit can be automatically turned off. When the output of the circuit is a low potential, the inverter controls the conduction of the M4, and pulls down the grid voltage of the M1, M2 and M3 tubes, so that the PMOS tube is conducted to generate current, the circuit gets rid of a degeneracy point and starts to work normally, and meanwhile, the band-gap reference voltage output by normal work can close the M4 tube through the inverter, so that the normal work of the circuit cannot be influenced.
The band-gap reference circuit is characterized in that a Trim adjusting unit is added to a reference source of the band-gap reference circuit on the basis of a traditional reference to improve errors generated by the reference source in a manufacturing process, and a curvature compensating circuit is added to improve the temperature drift performance of the reference source; therefore, the bandgap reference core module further includes a regulating circuit unit connected to the output terminal of the bandgap reference core module, i.e. located between the drains of R2 and M3, for regulating the output preset reference voltage. The adjusting circuit unit comprises a preset number of resistors which are arranged in series, and each resistor is connected with an MOS (metal oxide semiconductor) tube in parallel. The regulating circuit unit, i.e. Trim regulating unit, is located between the drains of R2 and M3. The Trim adjusting unit measures a band gap reference source which is not added with the trimming circuit, determines output precision offset caused by errors, and determines resistance and precision required by the trimming circuit.
Specifically, in this embodiment, as shown in fig. 7, the resistor string uses a binary coding form, and the total resistance value of the reference circuit is controlled by controlling the switching circuit made of the MOS transistor, so as to change the resistance; the number of the resistors is 6, and the resistors are sequentially connected in series according to the sequence of R,2R,4R,8R, 1694 and 32R; and a switching circuit made of an MOS (metal oxide semiconductor) tube is connected above each resistor in parallel, two ends of each resistor are connected with the source electrode and the drain electrode of the MOS, and the switching circuits are mutually connected in series.
Since the switch of the resistor string is also composed of the MOS transistor, in this embodiment, an NMOS transistor is used, and a current is also generated in the switch, and in order to reduce the influence of a leakage current (leakage current) in the trimming circuit Trim on the output resistor, the trimming resistor string should be placed on the output stage branch. In this embodiment, the control bit directly controls the adjusting circuit unit, and T1 to T6 are equivalent to the switch control pin of the trimming control circuit, that is, the gate of each MOS transistor is the pin, and when the pin is "1", it indicates that R is short-circuited, and when the pin is "0", it indicates that R is connected to the circuit, and the resistance of the output stage is adjusted. The effect of improving the precision of the band gap reference output voltage is achieved by controlling the resistance value of the pin to be changed. Therefore, the band gap reference output voltage precision can be effectively improved by adding the trimming circuit Trim, the required output can be trimmed according to the required application scene, and the application scene of the chip is increased.
The band-gap voltage internal loop and the trim circuit form a band-gap reference core circuit unit, and the starting circuit and the band-gap reference core circuit adopt an integrated design.
The buffer module comprises a primary buffer unit and a secondary buffer unit, wherein the preset reference voltage is subjected to gain amplification through the primary buffer unit, and then the preset differential reference voltage is output through the secondary buffer unit.
Specifically, as shown in fig. 4, the first-stage buffer unit adopts a chopper amplifier, the chopper technology firstly modulates a signal that has not been input to the amplifier to a high frequency through a modulator, the signal is superimposed with errors such as an offset voltage while being input to the amplifier, the signal of the high frequency is re-demodulated to a low frequency through a demodulator after the amplifier is operated, and meanwhile, the error of the low frequency is modulated to the high frequency through the demodulator, thereby using a two-stage amplifier structure. The chopper amplifier utilizes the chopper modulation technology, and the chopper technology can well modulate the error of an input end to high frequency through modulation and demodulation, so that the input error is well controlled. The chopper technology firstly modulates a signal which is not input into an amplifier to high frequency through a modulator, the signal is overlapped with errors such as offset voltage and the like while being input into the amplifier, the signal of the high frequency is re-demodulated to the low frequency through a demodulator after the amplifier works, and meanwhile, the error of the low frequency is modulated to the high frequency through the demodulator; FC in the figure represents the FC method assembly.
As shown in fig. 5, the second-stage buffer unit is a single-ended-to-differential buffer; the amplifier employed by the secondary buffer unit is a fully differential amplifier, and is used to set the gain by adding an external resistor to the fully differential amplifier. In addition, the positive and negative outputs of the fully differential amplifier are differential outputs, so that the fully differential amplifier has larger swing compared with a single-ended output, the influence of a mirror pole is avoided, the closed loop speed of the fully differential amplifier is obviously higher, and the fully differential amplifier has the advantages compared with the single-ended output amplifier, and four stable current sources are output as bias currents based on four pins corresponding to the input end and the output end of the fully differential amplifier, namely four pins corresponding to the positive and negative input ends and the positive and negative output ends of the fully differential amplifier. In one embodiment, a differential voltage with a Vp of 2.6V and a vn of 0.6V is finally output, which can provide a stable reference source for the quantization of the subsequent ADC.
In summary, the high-performance bandgap reference circuit comprises a bandgap reference core module and a buffer module, wherein the bandgap reference core module comprises a bandgap reference core circuit module, an operational amplifier, a curvature correction circuit module and a start circuit; the buffer module is composed of two stages, namely a first-stage buffer and a second-stage buffer, and the single-ended reference source is changed into a differential reference source while the load function of the reference source is improved. In one embodiment, the output voltage of the bandgap reference voltage source is 1.2V, the temperature drift coefficient is controlled within 10 ppm/DEG C from-40 to 125 ℃, the power consumption is lower than 500 mu W, and a relatively stable output structure can still be maintained in the face of errors generated in the manufacturing process under the control of an adjustable resistor array, under the work of a buffer, the whole reference voltage module finally provides a stable differential reference voltage for the ADC, and four stable current sources are output as bias currents.
The invention has designed a kind of high performance band gap reference circuit, the invention has disclosed a kind of high performance band gap reference circuit, this circuit is started through the starting circuit, then output and supplement the circuit through the camber through the core circuit module, reduce the reference voltage of the temperature drift coefficient, the reference voltage is outputting through the second buffer, carry on the ordinary gain amplification in the first buffer, improve the load capacity, in the second buffer, output the single-end to turn into the differential output, improve the applicability of the circuit; according to the invention, by arranging the high-order curvature compensation correction circuit module, the temperature drift coefficient of the circuit can be reduced, and the influence of the temperature drift on the circuit is reduced, so that the precision of the circuit is improved; the primary buffer adopts a chopper amplifier, so that the output load capacity of the reference source is improved; the secondary buffer adopts a fully differential amplifier as a buffer, and changes single-end output into differential output; in addition, a Trim adjusting unit is additionally arranged, and is mainly used for improving errors generated by a manufacturing process when the circuit is manufactured, determining the resistance value and precision required by the circuit trimming to reduce the errors, so that a relatively stable output structure can still be maintained in the face of the errors generated in the manufacturing process; in addition, under the operation of the buffer, the whole reference voltage module finally provides stable differential reference voltage, and four stable current sources are output as bias current. The circuit belongs to a low-power-consumption circuit, can reduce the overall power consumption of the circuit under the condition of improving the circuit precision, and can be applied to various fields.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described in the foregoing detailed description, or equivalent changes may be made in some of the features of the embodiments described above. All equivalent structures made by using the contents of the specification and the attached drawings of the invention can be directly or indirectly applied to other related technical fields, and are also within the protection scope of the patent of the invention.
Claims (10)
1. A high performance bandgap reference circuit, characterized by: the band-gap reference circuit comprises a band-gap reference core module and a buffer module, wherein the band-gap reference core module is connected with a preset power supply voltage and outputs a preset reference voltage; the preset reference voltage outputs a preset differential reference voltage through the buffer module.
2. A high performance bandgap reference circuit as claimed in claim 1, wherein: the band-gap reference core module comprises a band-gap reference core circuit unit and a curvature correction circuit unit, the band-gap reference core circuit unit is connected with the curvature correction circuit unit, and a preset power supply voltage outputs a preset reference voltage through the band-gap reference core circuit unit and the curvature correction circuit unit.
3. A high performance bandgap reference circuit as claimed in claim 2, wherein: the band-gap reference core module further comprises a starting circuit unit, the input end of the starting circuit unit is connected with the output end of the band-gap reference core module, the output end of the starting circuit unit is connected to the band-gap reference core circuit unit, and the starting circuit unit is used for providing a starting signal for the band-gap reference core circuit unit.
4. A high performance bandgap reference circuit as claimed in claim 3, wherein: the starting circuit comprises a phase inverter and an MOS (metal oxide semiconductor) tube M4, the output end of the band-gap reference core module is connected with the input end of the phase inverter, the output end of the phase inverter is connected with the grid electrode of the MOS tube M4, the source electrode of the MOS tube M4 is grounded, and the drain electrode of the MOS tube M4 is connected with the band-gap reference core circuit unit.
5. A high performance bandgap reference circuit as claimed in claim 2, wherein: the band-gap reference core module further comprises an adjusting circuit unit connected with the output end of the band-gap reference core module, and the adjusting circuit unit is used for adjusting the output preset reference voltage.
6. A high performance bandgap reference circuit as claimed in claim 5, wherein: the adjusting circuit unit comprises a preset number of resistors which are arranged in series, and each resistor is connected with an MOS (metal oxide semiconductor) tube in parallel.
7. A high performance bandgap reference circuit as claimed in claim 1, wherein: the buffer module comprises a primary buffer unit and a secondary buffer unit, wherein the preset reference voltage is subjected to gain amplification through the primary buffer unit, and then the preset differential reference voltage is output through the secondary buffer unit.
8. A high performance bandgap reference circuit as claimed in claim 2, wherein: the band-gap reference core circuit unit comprises a first amplifier, an MOS tube M1, an MOS tube M2, an MOS tube M3, a transistor Q1, a transistor Q2, a transistor Q3, a resistor RCL1, a resistor RCL2, a resistor R1 and a resistor R2, wherein the source electrodes of the MOS tube M1, the MOS tube M2 and the MOS tube M3 are connected with a preset power supply voltage, the grid electrodes of the MOS tube M1, the MOS tube M2 and the MOS tube M3 are connected with the output end of the first amplifier, the drain electrode of the MOS tube M1 is connected with the positive input end of the first amplifier and one end of the resistor R1 through the resistor RCL1, the other end of the resistor R1 is connected with the emitter electrode of the transistor Q1, the drain electrode of the MOS tube M2 is connected with the negative input end of the first amplifier and the emitter electrode of the transistor Q2 through the resistor RCL2, the base electrodes and the collector electrodes of the transistor Q1, the transistor Q2 and the transistor Q3 are connected with the drain electrode of the MOS tube M3 through the resistor R2 and the drain electrode of the MOS tube M3 is used as the output end of the band-gap reference core module, and the output end of the band-gap reference voltage GND is preset.
9. A high performance bandgap reference circuit as claimed in claim 8, wherein: the curvature correction circuit unit comprises a second amplifier, an MOS tube M5, an MOS tube M6, a resistor R3, a resistor R4 and a transistor Q4, wherein the source electrodes of the MOS tube M5 and the MOS tube M6 are connected and connected with a preset power supply voltage, the grid electrodes of the MOS tube M5 and the MOS tube M6 are connected and connected with the output end of the second amplifier, the inverting input end of the second amplifier is connected with the drain electrode of the MOS tube M3, the non-inverting input end of the second amplifier is respectively connected with the drain electrode of the MOS tube M5 and one end of the resistor R3, the drain electrode of the MOS tube M6 is respectively connected with one end of the resistor R4 and the emitter electrode of the transistor Q4, the base electrode and the collector electrode of the transistor Q4 and the other end of the resistor R3 are connected with GND, and the other end of the resistor R4 is connected with the emitter electrode of the transistor Q3.
10. A high performance bandgap reference circuit as claimed in claim 9, wherein: the first amplifier and the second amplifier both adopt single-stage operational amplifiers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211566786.4A CN115857601A (en) | 2022-12-07 | 2022-12-07 | High-performance band-gap reference circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211566786.4A CN115857601A (en) | 2022-12-07 | 2022-12-07 | High-performance band-gap reference circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115857601A true CN115857601A (en) | 2023-03-28 |
Family
ID=85670864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211566786.4A Pending CN115857601A (en) | 2022-12-07 | 2022-12-07 | High-performance band-gap reference circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115857601A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117970992A (en) * | 2024-04-01 | 2024-05-03 | 青岛元通电子有限公司 | High-precision power reference voltage source control circuit and control method |
-
2022
- 2022-12-07 CN CN202211566786.4A patent/CN115857601A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117970992A (en) * | 2024-04-01 | 2024-05-03 | 青岛元通电子有限公司 | High-precision power reference voltage source control circuit and control method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7091713B2 (en) | Method and circuit for generating a higher order compensated bandgap voltage | |
| US6642699B1 (en) | Bandgap voltage reference using differential pairs to perform temperature curvature compensation | |
| Zhu et al. | A 4.6-ppm/° C high-order curvature compensated bandgap reference for BMIC | |
| US20160266598A1 (en) | Precision bandgap reference | |
| US7023367B1 (en) | Current steering digital to analog converter with improved dynamic linearity | |
| CN106959723A (en) | A kind of bandgap voltage reference of wide input range high PSRR | |
| US6201379B1 (en) | CMOS voltage reference with a nulling amplifier | |
| EP0996996B1 (en) | A high speed and high gain operational amplifier | |
| CN113157041B (en) | Wide-input band gap reference voltage source | |
| CN113311898B (en) | LDO circuit with power supply suppression, chip and communication terminal | |
| US11287840B2 (en) | Voltage reference with temperature compensation | |
| CN115857601A (en) | High-performance band-gap reference circuit | |
| CN115562431A (en) | Band gap reference circuit | |
| CN210609074U (en) | Rail-to-rail operational amplifier capable of correcting offset voltage | |
| CN201097250Y (en) | High-power restraint standard source with gap | |
| CN206460352U (en) | Band gap reference circuit | |
| US9231540B2 (en) | High performance class AB operational amplifier | |
| CN110879626A (en) | Reference circuit under low power supply voltage | |
| KR100609683B1 (en) | Temperature compensated Complementary Metal Oxide Semiconductor exponential function generator circuit | |
| CN114546019B (en) | Temperature coefficient adjustable reference voltage source | |
| Vermaas et al. | A bandgap voltage reference using digital CMOS process | |
| CN112130610B (en) | Band gap reference circuit with high power supply rejection ratio | |
| US7411459B2 (en) | Current mode transconductor tuning device | |
| CN112256078A (en) | Positive temperature coefficient current source and zero temperature coefficient current source | |
| CN117519403B (en) | Band gap reference circuit and electronic equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |