CN111585446A - Bidirectional full-bridge resonant converter - Google Patents

Bidirectional full-bridge resonant converter Download PDF

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Publication number
CN111585446A
CN111585446A CN202010436214.9A CN202010436214A CN111585446A CN 111585446 A CN111585446 A CN 111585446A CN 202010436214 A CN202010436214 A CN 202010436214A CN 111585446 A CN111585446 A CN 111585446A
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diode
module
tube
parasitic capacitor
switch
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CN202010436214.9A
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CN111585446B (en
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张东来
孙紫云
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Shenzhen Graduate School Harbin Institute of Technology
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Shenzhen Graduate School Harbin Institute of Technology
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
    • H02M3/33523—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
    • H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
    • H02M3/33584—Bidirectional converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses
    • H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

The invention provides a bidirectional full-bridge resonant converter which comprises a forward working module, a reverse working module and a transformer, wherein the primary side of the transformer is connected with the forward working module, the secondary side of the transformer is connected with the reverse working module, and an auxiliary capacitor branch is additionally arranged on the primary side of the transformer. The invention has the beneficial effects that: the invention realizes high-efficiency work in the whole wide voltage range by controlling the on-off of the switching tube in a pulse frequency modulation mode; the bidirectional full-bridge resonant converter is simple in structure, flexible in design and adjustment and high in practicability.

Description

Bidirectional full-bridge resonant converter
Technical Field
The present invention relates to a resonant converter, and more particularly, to a bidirectional full-bridge resonant converter that achieves a wide output voltage range.
Background
The traditional bidirectional full-bridge LLC resonant converter has the problem that the gain of the reverse operation normalized voltage is less than 1 when the converter operates reversely, so that the boost cannot be realized when the converter operates reversely, and the range of the reverse output voltage is limited.
Disclosure of Invention
The invention provides a bidirectional full-bridge resonant converter, which comprises a forward working module, a reverse working module and a transformer, wherein the primary side of the transformer is connected with the forward working module, and the secondary side of the transformer is connected with the reverse working module; the forward working module comprises a forward input power supply, a reverse output capacitor, a first switch module, a second switch module, a third switch module, a fourth switch module, an auxiliary capacitor and an LLC resonant circuit, the first switch module and the second switch module are connected in series to form the first module, the third switch module and the fourth switch module are connected in series to form the second module, the forward input power supply, the reverse output capacitor, the first module and the second module are connected in parallel, one end of the primary side of the transformer is connected between the first switch module and the second switch module, the other end of the primary side transformer is connected between the third switch module and the fourth switch module, and the auxiliary capacitor and the LLC resonant circuit are connected in parallel between one end of the primary side of the transformer and the other end of the primary side of the transformer; the reverse working module comprises a reverse input power supply, a forward output capacitor, a fifth switch module, a sixth switch module, a seventh switch module and an eighth switch module, the fifth switch module and the sixth switch module are connected in series to form a third module, the seventh switch module and the eighth switch module are connected in series to form a fourth module, the reverse input power supply, the forward output capacitor, the third module and the fourth module are connected in parallel, one end of a secondary side of the transformer is connected between the seventh switch module and the eighth switch module, and the other end of the secondary side of the transformer is connected between the fifth switch module and the sixth switch module.
As a further improvement of the invention, the LLC resonant circuit consists of a first inductor, a second inductor and a resonant capacitor which are connected in sequence.
As a further improvement of the present invention, the first inductor is an excitation inductor, and the second inductor is a resonance inductor.
As a further improvement of the present invention, the first switch module includes a first switch tube, a first diode, and a first parasitic capacitor, and the first diode and the first parasitic capacitor are connected in parallel and then connected to the first switch tube; the second switch module comprises a second switch tube, a second diode and a second parasitic capacitor, and the second diode and the second parasitic capacitor are connected in parallel and then are connected with the second switch tube; the third switching module comprises a third switching tube, a third diode and a third parasitic capacitor, and the third diode and the third parasitic capacitor are connected in parallel and then are connected with the third switching tube; the fourth switch module comprises a fourth switch tube, a fourth diode and a fourth parasitic capacitor, and the fourth diode and the fourth parasitic capacitor are connected in parallel and then connected with the fourth switch tube; the fifth switch module comprises a fifth switch tube, a fifth diode and a fifth parasitic capacitor, and the fifth diode and the fifth parasitic capacitor are connected in parallel and then are connected with the fifth switch tube; the sixth switching module comprises a sixth switching tube, a sixth diode and a sixth parasitic capacitor, and the sixth diode and the sixth parasitic capacitor are connected in parallel and then are connected with the sixth switching tube; the seventh switch module comprises a seventh switch tube, a seventh diode and a seventh parasitic capacitor, and the seventh diode and the seventh parasitic capacitor are connected in parallel and then connected with the seventh switch tube; the eighth switch module comprises an eighth switch tube, an eighth diode and an eighth parasitic capacitor, and the eighth diode and the eighth parasitic capacitor are connected in parallel and then connected with the eighth switch tube.
As a further improvement of the present invention, the first switch tube is a first fet enhanced N-MOS, and both ends of the first diode and the first parasitic capacitor connected in parallel are respectively connected to a drain and a source of the first fet enhanced N-MOS; the second switch tube is a second field effect tube enhanced N-MOS, and two ends of the second diode and the second parasitic capacitor which are connected in parallel are respectively connected with a drain electrode and a source electrode of the second field effect tube enhanced N-MOS; the third switch tube is a third field effect tube enhanced N-MOS, and two ends of the third diode and the third parasitic capacitor which are connected in parallel are respectively connected with a drain electrode and a source electrode of the third field effect tube enhanced N-MOS; the fourth switch tube is a fourth field effect tube enhanced N-MOS, and two ends of the fourth diode and the fourth parasitic capacitor which are connected in parallel are respectively connected with a drain electrode and a source electrode of the fourth field effect tube enhanced N-MOS; the fifth switch tube is a first field effect tube enhanced N-MOS, and two ends of the fifth diode and the fifth parasitic capacitor which are connected in parallel are respectively connected with the drain electrode and the source electrode of the fourth field effect tube enhanced N-MOS; the sixth switching tube is a sixth field effect tube enhanced N-MOS, and two ends of the sixth diode and the sixth parasitic capacitor which are connected in parallel are respectively connected with the drain electrode and the source electrode of the sixth field effect tube enhanced N-MOS; the seventh switch tube is a seventh field effect tube enhanced N-MOS, and two ends of the seventh diode and the seventh parasitic capacitor which are connected in parallel are respectively connected with the drain electrode and the source electrode of the sixth field effect tube enhanced N-MOS; the eighth switching tube is an eighth field-effect tube enhanced N-MOS, and two ends of the eighth diode and the eighth parasitic capacitor which are connected in parallel are respectively connected with the drain electrode and the source electrode of the sixth field-effect tube enhanced N-MOS.
The invention has the beneficial effects that: the invention controls the on-off of the switch tube in a Pulse Frequency Modulation (PFM) mode to realize high-efficiency work in the whole wide voltage range; the bidirectional full-bridge resonant converter is simple in structure, flexible in design and adjustment and high in practicability.
Drawings
Fig. 1 is a circuit schematic of the present invention.
Detailed Description
As shown in FIG. 1, the present invention discloses a bidirectional full-bridge resonant converter, wherein an auxiliary capacitor C is addedr2The problem that the reverse operation normalized voltage gain of the LLC resonant converter is smaller than 1 is solved, the LLC resonant converter has wide voltage range characteristics and soft switching characteristics, and high-efficiency work in the whole wide voltage range is realized by controlling the on-off of a switching tube in a Pulse Frequency Modulation (PFM) mode.
An auxiliary capacitor C is added to a resonant cavity of the bidirectional full-bridge resonant converterr2。
The bidirectional full-bridge resonant converter comprises a forward working module, a reverse working module and a transformer T, wherein the primary side of the transformer T is connected with the forward working module, and the secondary side of the transformer T is connected with the reverse working module; the forward working module comprises a forward input power supply V1And a reverse output capacitor Cf1The first switch module, the second switch module, the third switch module, the fourth switch module and the auxiliary capacitor Cr2And LLC resonant circuit, the first switch moduleThe first module is formed by connecting the second switch module in series, the second module is formed by connecting the third switch module and the fourth switch module in series, and the positive input power supply V1The reverse output capacitor Cf1The first module and the second module are connected in parallel, one end A of the primary side of the transformer T is connected between the first switch module and the second switch module, the other end B of the primary side of the transformer T is connected between the third switch module and the fourth switch module, and the auxiliary capacitor Cr2The LLC resonant circuit is connected between one end A and the other end B of the primary side of the transformer T in parallel; the reverse working module comprises a reverse input power supply V2A forward output capacitor Cf2The power supply comprises a fifth switch module, a sixth switch module, a seventh switch module and an eighth switch module, wherein the fifth switch module and the sixth switch module are connected in series to form a third module, the seventh switch module and the eighth switch module are connected in series to form a fourth module, and the reverse input power supply V is connected with the power supply2The forward output capacitor Cf2The third module and the fourth module are connected in parallel, one end C of the secondary side of the transformer T is connected between the seventh switch module and the eighth switch module, and the other end D of the secondary side of the transformer T is connected between the fifth switch module and the sixth switch module.
The LLC resonant circuit consists of a first inductor, a second inductor and a resonant capacitor C which are connected in sequencer1And (4) forming.
The first inductor is an excitation inductor LmThe second inductor is a resonant inductor Lr。
By exciting inductance LmResonant inductor LrAnd a resonance capacitor Cr1LLC resonant circuit and auxiliary capacitance C of constitutionr2In parallel between points A, B in the inverter network.
The first switch module comprises a first switch tube Q1, a first diode D1 and a first parasitic capacitor C1, wherein the first diode D1 and the first parasitic capacitor C1 are connected in parallel and then are connected with the first switch tube Q1; the second switch module comprises a second switch tube Q2, a second diode D2 and a second parasitic capacitor C2, and the second diode D2 and the second parasitic capacitor C2 are connected in parallel and then connected with the second switch tube Q2; the third switching module comprises a third switching tube Q3, a third diode D3 and a third parasitic capacitor C3, wherein the third diode D3 and the third parasitic capacitor C3 are connected in parallel and then connected with the third switching tube Q3; the fourth switching module comprises a fourth switching tube Q4, a fourth diode D4 and a fourth parasitic capacitor C4, and the fourth diode D4 and the fourth parasitic capacitor C4 are connected in parallel and then connected with the fourth switching tube Q4; the fifth switching module comprises a fifth switching tube Q5, a fifth diode D5 and a fifth parasitic capacitor C5, and the fifth diode D5 and the fifth parasitic capacitor C5 are connected in parallel and then connected with the fifth switching tube Q5; the sixth switching module comprises a sixth switching tube Q6, a sixth diode D6 and a sixth parasitic capacitor C6, and the sixth diode D6 and the sixth parasitic capacitor C6 are connected in parallel and then connected with the sixth switching tube Q6; the seventh switching module comprises a seventh switching tube Q7, a seventh diode D7 and a seventh parasitic capacitor C7, and the seventh diode D7 and the seventh parasitic capacitor C7 are connected in parallel and then connected with the seventh switching tube Q7; the eighth switching module comprises an eighth switching tube Q8, an eighth diode D8 and an eighth parasitic capacitor C8, and the eighth diode D8 and the eighth parasitic capacitor C8 are connected in parallel and then connected to the eighth switching tube Q8.
The first switch tube Q1 is a first field effect tube enhanced N-MOS, and two ends of the first diode D1 and the first parasitic capacitor C1 after being connected in parallel are respectively connected with the drain electrode and the source electrode of the first field effect tube enhanced N-MOS; the second switch tube Q2 is a second fet-enhanced N-MOS, and two ends of the second diode D2 and the second parasitic capacitor C2 after being connected in parallel are respectively connected to a drain and a source of the second fet-enhanced N-MOS; the third switching tube Q3 is a third field effect tube enhanced N-MOS, and two ends of the third diode D3 and the third parasitic capacitor C3 after being connected in parallel are respectively connected with the drain electrode and the source electrode of the third field effect tube enhanced N-MOS; the fourth switching tube Q4 is a fourth fet-enhanced N-MOS, and two ends of the fourth diode D4 and the fourth parasitic capacitor C4 after being connected in parallel are respectively connected to a drain and a source of the fourth fet-enhanced N-MOS; the fifth switching tube Q5 is a first fet-enhanced N-MOS, and two ends of the fifth diode D5 and the fifth parasitic capacitor C5 after being connected in parallel are respectively connected to a drain and a source of the fourth fet-enhanced N-MOS; the sixth switching tube Q6 is a sixth fet-enhanced N-MOS, and two ends of the sixth diode D6 and the sixth parasitic capacitor C6 after being connected in parallel are respectively connected to a drain and a source of the sixth fet-enhanced N-MOS; the seventh switch tube Q7 is a seventh fet-enhanced N-MOS, and two ends of the seventh diode D7 and the seventh parasitic capacitor C7 after being connected in parallel are respectively connected to a drain and a source of the sixth fet-enhanced N-MOS; the eighth switching tube Q8 is an eighth fet-enhanced N-MOS, and two ends of the eighth diode D8 and the eighth parasitic capacitor C8 after being connected in parallel are respectively connected to a drain and a source of the sixth fet-enhanced N-MOS.
When working in forward direction, the input power in forward direction is V1The first to fourth switching tubes Q1-Q4 are operated in a normal full-bridge mode state, and the fifth to eighth switching tubes Q5-Q8 are in a continuous off state. At fm＜fs＜frIn the working frequency range of (3), when the driving signals of the first switching tube Q1 and the fourth switching tube Q4 are reduced to 0, the first switching tube Q1 and the fourth switching tube Q4 are turned off, at the moment, the four switching tubes are not turned on, the first parasitic capacitor C1 and the fourth parasitic capacitor C4 of the switching tubes are charged, and the second parasitic capacitor C2 and the third parasitic capacitor C3 are discharged, so that a condition is provided for zero-voltage switching-on of the second switching tube Q2 and the third switching tube Q3. The primary side current flows through the second diode D2 and the third diode D3, at the moment, the exciting current is equal to the resonance current, the primary side is disconnected with the secondary side, no current flows into the secondary side diode, the output capacitor supplies energy to the load, and no forward transmission of the energy is realized. When the driving signals of the second switch tube Q2 and the third switch tube Q3 are increased from 0 to high voltage, the second switch tube Q2 and the third switch tube Q3 realize zero voltage switching-on, the primary side exciting current and the resonance current are both increased in opposite directions after being reduced to 0, and current difference exists between the primary side exciting current and the resonance current, so that the secondary side rectifier tube is conducted, the secondary side voltage of the transformer is clamped to the output voltage,therefore, the exciting current rises linearly, and forward energy transmission is realized; when the primary side exciting current is equal to the resonant current, the primary side is disconnected from the secondary side, no current flows into the secondary side diode, the output capacitor provides energy for the load, and no forward transmission of the energy is realized.
When working reversely, the input power is V2The fifth to eighth switching tubes Q5-Q8 are operated in a normal full-bridge mode state, and the first to fourth switching tubes Q1-Q4 are in a continuous off state. At fs＞frIn the working frequency range of (3), when the driving signals of the sixth switching tube Q6 and the seventh switching tube Q7 are reduced to 0, the sixth switching tube Q6 and the seventh switching tube Q7 are turned off, at this time, the four switching tubes are not turned on, the sixth parasitic capacitor C6 and the seventh parasitic capacitor C7 of the switching tubes are charged, the fifth parasitic capacitor C5 and the eighth parasitic capacitor C8 are discharged, after the charging and discharging are finished, the current flows through the fifth diode D5 and the eighth diode D8 to carry out follow current, a condition is provided for the fifth switching tube Q5 and the eighth switching tube Q8 to be turned on, and the secondary side current flows through the first diode D1 and the fourth diode D4 to follow current. When the driving signals of the fifth switch tube Q5 and the eighth switch tube Q8 are increased from 0 to high voltage, the fifth switch tube Q5 and the eighth switch tube Q8 realize zero voltage switching-on, the primary side current flows through the fifth switch tube Q5, the excitation inductor and the eighth switch tube Q8, the secondary side current flowing through the resonant inductor and the auxiliary capacitor is equal, no current flows into the secondary side diode, the secondary side diode realizes zero current switching-off, the output capacitor provides energy for the load, and no energy transmission exists; when the currents flowing through the resonant inductor and the auxiliary capacitor on the secondary side are not equal any more and a current difference exists, the second diode D2 and the third diode D3 on the secondary side are switched on, and energy transmission is achieved. The output voltage is controlled by controlling the switching frequency of the resonant converter, and the resonant converter solves the problem that the LLC resonant converter can not boost in the reverse direction.
On the basis of the bidirectional full-bridge LLC resonant converter, the auxiliary capacitor branch is added on the primary side of the transformer, and the voltage can be increased and decreased in forward and reverse operation, so that the bidirectional full-bridge LLC resonant converter is simpler in structure and easier to control.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (5)

1. A bidirectional full-bridge resonant converter is characterized in that: the device comprises a forward working module, a reverse working module and a transformer (T), wherein the primary side of the transformer (T) is connected with the forward working module, and the secondary side of the transformer (T) is connected with the reverse working module; the forward working module comprises a forward input power supply (V)1) Reverse output capacitance (C)f1) A first switch module, a second switch module, a third switch module, a fourth switch module, and an auxiliary capacitor (C)r2) And the LLC resonant circuit, the first switch module and the second switch module are connected in series to form a first module, the third switch module and the fourth switch module are connected in series to form a second module, and the forward input power supply (V)1) The reverse output capacitance (C)f1) The first module and the second module are connected in parallel, one end (A) of the primary side of the transformer (T) is connected between the first switch module and the second switch module, the other end (B) of the primary side of the transformer (T) is connected between the third switch module and the fourth switch module, and the auxiliary capacitor (C)r2) The LLC resonant circuit is connected between one end (A) and the other end (B) of the primary side of the transformer (T) in parallel; the reverse operation module comprises a reverse input power supply (V)2) A forward output capacitor (C)f2) The power supply comprises a fifth switch module, a sixth switch module, a seventh switch module and an eighth switch module, wherein the fifth switch module and the sixth switch module are connected in series to form a third module, the seventh switch module and the eighth switch module are connected in series to form a fourth module, and the reverse input power supply (V) is connected with the power supply2) The forward output capacitance (C)f2) The third module and the fourth module are connected in parallel, one end (C) of the secondary side of the transformer (T) is connected between the seventh switch module and the eighth switch module, and the transformer(T) the other end (D) of the secondary side is connected between the fifth switching module and the sixth switching module.
2. The bidirectional full-bridge resonant converter of claim 1, wherein: the LLC resonant circuit consists of a first inductor, a second inductor and a resonant capacitor (C) which are connected in sequencer1) And (4) forming.
3. The bidirectional full-bridge resonant converter of claim 2, wherein: the first inductor is an excitation inductor (L)m) The second inductor is a resonance inductor (L)r)。
4. The bidirectional full-bridge resonant converter according to any of claims 1 to 3, characterized in that: the first switch module comprises a first switch tube (Q1), a first diode (D1) and a first parasitic capacitor (C1), wherein the first diode (D1) and the first parasitic capacitor (C1) are connected in parallel and then are connected with the first switch tube (Q1); the second switch module comprises a second switch tube (Q2), a second diode (D2) and a second parasitic capacitor (C2), and the second diode (D2) and the second parasitic capacitor (C2) are connected in parallel and then are connected with the second switch tube (Q2); the third switching module comprises a third switching tube (Q3), a third diode (D3) and a third parasitic capacitor (C3), and the third diode (D3) and the third parasitic capacitor (C3) are connected in parallel and then are connected with the third switching tube (Q3); the fourth switching module comprises a fourth switching tube (Q4), a fourth diode (D4) and a fourth parasitic capacitor (C4), and the fourth diode (D4) and the fourth parasitic capacitor (C4) are connected in parallel and then connected with the fourth switching tube (Q4); the fifth switch module comprises a fifth switch tube (Q5), a fifth diode (D5) and a fifth parasitic capacitor (C5), and the fifth diode (D5) and the fifth parasitic capacitor (C5) are connected in parallel and then are connected with the fifth switch tube (Q5); the sixth switching module comprises a sixth switching tube (Q6), a sixth diode (D6) and a sixth parasitic capacitor (C6), and the sixth diode (D6) and the sixth parasitic capacitor (C6) are connected in parallel and then are connected with the sixth switching tube (Q6); the seventh switching module comprises a seventh switching tube (Q7), a seventh diode (D7) and a seventh parasitic capacitor (C7), and the seventh diode (D7) and the seventh parasitic capacitor (C7) are connected in parallel and then are connected with the seventh switching tube (Q7); the eighth switch module comprises an eighth switch tube (Q8), an eighth diode (D8) and an eighth parasitic capacitor (C8), and the eighth diode (D8) and the eighth parasitic capacitor (C8) are connected in parallel and then connected with the eighth switch tube (Q8).
5. The bidirectional full-bridge resonant converter of claim 4, wherein: the first switch tube (Q1) is a first field effect tube enhanced N-MOS, and two ends of the first diode (D1) and the first parasitic capacitor (C1) which are connected in parallel are respectively connected with the drain electrode and the source electrode of the first field effect tube enhanced N-MOS; the second switch tube (Q2) is a second field effect tube enhanced N-MOS, and two ends of the second diode (D2) and the second parasitic capacitor (C2) which are connected in parallel are respectively connected with the drain electrode and the source electrode of the second field effect tube enhanced N-MOS; the third switching tube (Q3) is a third field effect tube enhanced N-MOS, and two ends of the third diode (D3) and the third parasitic capacitor (C3) which are connected in parallel are respectively connected with the drain electrode and the source electrode of the third field effect tube enhanced N-MOS; the fourth switching tube (Q4) is a fourth field effect tube enhanced N-MOS, and two ends of the fourth diode (D4) and the fourth parasitic capacitor (C4) which are connected in parallel are respectively connected with the drain electrode and the source electrode of the fourth field effect tube enhanced N-MOS; the fifth switching tube (Q5) is a first field effect tube enhanced N-MOS, and two ends of the fifth diode (D5) and the fifth parasitic capacitor (C5) which are connected in parallel are respectively connected with the drain electrode and the source electrode of the fourth field effect tube enhanced N-MOS; the sixth switching tube (Q6) is a sixth field effect tube enhanced N-MOS, and two ends of the sixth diode (D6) and the sixth parasitic capacitor (C6) which are connected in parallel are respectively connected with the drain electrode and the source electrode of the sixth field effect tube enhanced N-MOS; the seventh switch tube (Q7) is a seventh field effect tube enhanced N-MOS, and two ends of the seventh diode (D7) and the seventh parasitic capacitor (C7) which are connected in parallel are respectively connected with the drain electrode and the source electrode of the sixth field effect tube enhanced N-MOS; and the eighth switching tube (Q8) is an eighth field-effect tube enhanced N-MOS, and two ends of the eighth diode (D8) and the eighth parasitic capacitor (C8) which are connected in parallel are respectively connected with the drain electrode and the source electrode of the sixth field-effect tube enhanced N-MOS.
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