CN111584573B - OLED display panel and preparation method thereof - Google Patents
OLED display panel and preparation method thereof Download PDFInfo
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- CN111584573B CN111584573B CN202010403170.XA CN202010403170A CN111584573B CN 111584573 B CN111584573 B CN 111584573B CN 202010403170 A CN202010403170 A CN 202010403170A CN 111584573 B CN111584573 B CN 111584573B
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- 238000002360 preparation method Methods 0.000 title abstract description 8
- 125000006850 spacer group Chemical group 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 14
- 238000001914 filtration Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 345
- 239000000758 substrate Substances 0.000 claims description 38
- 239000011521 glass Substances 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 14
- 238000004806 packaging method and process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 6
- 239000012044 organic layer Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000012780 transparent material Substances 0.000 claims description 3
- 230000032683 aging Effects 0.000 abstract description 4
- 230000009545 invasion Effects 0.000 abstract description 3
- 239000005416 organic matter Substances 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 description 14
- 239000010408 film Substances 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 7
- 230000003667 anti-reflective effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
Abstract
The application provides an OLED display panel and preparation method thereof, OLED display panel includes the light emitting device layer in this application, TFT device layer and look hinder the layer, wherein, TFT device layer and look hinder the layer and all be located the light-emitting side of light emitting device layer, look hinder the layer and be used for carrying out color filtration to the emergent light of light emitting device, and be used for keeping apart ambient light, the antireflection film in the bottom emission OLED device has been replaced, the luminous intensity of whole OLED device has been improved, the operational environment of OLED display panel is improved, look hinders the layer and is provided with the spacer layer that is used for separating the invasion light emitting device layer of the material of preventing to hinder the one side of TFT device layer, organic matter overflows in the look hinder the layer, solve the ageing problem of OLED device, look hinder layer is close to light emitting device layer one side and is provided with the concave surface in addition, increase the emergent angle of the emergent light of light emitting device layer, promote OLED display panel's display quality.
Description
Technical Field
The application relates to the technical field of display, in particular to an OLED display panel and a preparation method thereof.
Background
Compared with the traditional LCD, the OLED device has the advantages of light weight, wide viewing angle, quick response time, low temperature resistance, high luminous efficiency and the like, so that the OLED device is always considered as a next-generation novel display technology in the display industry.
For the OLED display panel with bottom emission, the color filter is adopted to filter the color so as to display proper light color, and the OLED display panel with bottom emission has a certain visual angle, because the OLED device structure with bottom emission leads most TFTs to face to an actual observer, the external light is reflected greatly, and an anti-reflection film which can reduce the luminous intensity of an OLED light source by more than 50 percent is added on the luminous side, thus the OLED display panel with bottom emission has a huge loss to the OLED material with low luminous intensity. As shown in fig. 1 and 2, the OLED display panel 100 includes an anti-reflective film 101, an array substrate 102 disposed on the surface of the anti-reflective film 101, where the array substrate 102 includes a TFT device layer and a planarization layer 1022 disposed on the surface of the TFT device layer 1021, a color blocking layer 103 is disposed between the TFT device layer 1021 and the planarization layer 1022, the color blocking layer 103 includes a red color blocking 1031, a green color blocking 1032 and a blue color blocking 1033, the planarization layer 1022 is disposed with a light emitting layer 104, and an encapsulation layer 105 is disposed on the surface of the light emitting layer 104, where the light emitting layer 104 includes a pixel defining layer 1041, an anode layer 1042, a light emitting unit 1043 and a cathode layer 1044 disposed in an opening area where the pixel defining layer 1041 is formed, and when the light S1 emitted from the light emitting layer 104 is to pass through the array substrate 102, a part of the external light S2 and a part of the external light S3 are scattered to be scattered to the array substrate 102, so that the anti-reflective film 101 needs to be added, the anti-reflective film 101 reduces the intensity of the light emitting layer 103 to be a color mixture, and the light emitting intensity of the light emitting material is not high enough to be lost to the light emitting intensity of the OLED itself.
In summary, an OLED display panel and a method for manufacturing the same are needed to solve the technical problem that in the prior art, the bottom-emitting OLED device structure makes most of TFTs face to an actual observer, which leads to reflection interference of external light, and after an anti-reflection film is added on a light emitting side, the light emitting intensity of an OLED light source is reduced by more than 50%, which is a huge loss for an OLED material with low light emitting intensity.
Content of the application
The application provides a display panel and a preparation method thereof, which can solve the technical problems that the OLED device structure of bottom emission in the prior art leads most TFTs to face to an actual observer, so that the external light is reflected to interfere, the luminous intensity of an OLED light source is reduced by more than 50% after an anti-reflection film is added at a luminous side, and the OLED material with low luminous intensity is a huge loss.
The application provides an OLED display panel, including: a light emitting device layer; a TFT device layer positioned on the light emitting side of the light emitting device layer; and the color resistance layer is positioned on the light emergent side of the TFT device layer and is used for carrying out color filtration on emergent light of the light-emitting device and isolating ambient light.
According to a preferred embodiment of the present application, a spacer layer for isolating intrusion of the color blocking material into the light emitting device layer is provided on a side of the color blocking layer facing the TFT device layer.
According to a preferred embodiment of the present application, the spacer layer is a glass substrate.
According to a preferred embodiment of the present application, the color resist layer is formed on the surface of the glass substrate, and the surface of the glass substrate is provided with an encapsulation layer covering the color resist layer.
According to a preferred embodiment of the present application, the encapsulation layer includes a first inorganic layer, a second inorganic layer, and an organic layer between the first inorganic layer and the second inorganic layer, the first inorganic layer being disposed adjacent to the color resist layer.
According to a preferred embodiment of the present application, a concave surface is disposed on a side of the color blocking layer, which is close to the light emitting device layer, so as to increase an outgoing angle of outgoing light of the light emitting device layer.
According to a preferred embodiment of the present application, the material of the color resist layer is perovskite ink.
According to a preferred embodiment of the present application, the light emitting device layer further includes a plurality of three primary color light emitting devices arranged in an array, and the color resistance layer includes three primary color resistances corresponding to the three primary color light emitting devices.
According to a preferred embodiment of the present application, the TFT device layer includes a substrate, a buffer layer disposed on the substrate, a plurality of thin film transistors disposed on the buffer layer, and a planarization layer disposed on the plurality of thin film transistors, where a via hole is disposed on the planarization layer; the light-emitting device layer comprises an anode positioned on the surface of the planarization layer, a light-emitting layer positioned on the surface of the anode, and a cathode positioned on the surface of the light-emitting layer, wherein the anode is electrically connected with the drain electrode in the thin film transistor through the via hole.
According to the display panel, the application also provides a preparation method of the display panel, which comprises the following steps:
s101, providing a glass substrate, preparing a TFT device layer on the surface of the glass substrate, inverting the glass substrate and the TFT device layer, and preparing a color resistance layer on one side of the glass substrate far away from the TFT device layer;
s102, inverting the color resistance layer, the glass substrate and the TFT device layer again, and preparing a light-emitting device layer on one side of the TFT device layer far away from the color resistance layer.
The application provides an OLED display panel and preparation method thereof, OLED display panel includes the light emitting device layer in this application, TFT device layer and look hinder the layer, wherein, TFT device layer and look hinder the layer and all be located the light-emitting side of light emitting device layer, look hinder the layer and be used for carrying out color filtration to the emergent light of light emitting device, and be used for keeping apart ambient light, the antireflection film in the bottom emission OLED device has been replaced, the luminous intensity of whole OLED device has been improved, the operational environment of OLED display panel is improved, look hinders the layer and is provided with the spacer layer that is used for separating the invasion light emitting device layer of the material of preventing to hinder the one side of TFT device layer, organic matter overflows in the look hinder the layer, solve the ageing problem of OLED device, look hinder layer is close to light emitting device layer one side and is provided with the concave surface in addition, increase the emergent angle of the emergent light of light emitting device layer, promote OLED display panel's display quality.
Drawings
In order to more clearly illustrate the embodiments or the technical solutions in the prior art, the following description will briefly introduce the drawings that are required to be used in the embodiments or the description of the prior art, it is obvious that the drawings in the following description are only some embodiments of the application, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of an OLED display panel in the prior art.
Fig. 2 is a schematic view of a color blocking layer in an OLED display panel according to the prior art.
Fig. 3 is a schematic structural diagram of an OLED display panel according to the present application.
Fig. 4 is a schematic view of a color blocking layer in an OLED display panel according to the present application.
Fig. 5 is a schematic diagram of another structure of a color resist layer of an OLED display panel according to the present application.
Fig. 6 is a schematic diagram of a process for manufacturing an OLED display panel according to the present application.
Fig. 7 to 12 are schematic structural views of an OLED display panel according to the present application during the manufacturing process.
Detailed Description
The following description of the embodiments refers to the accompanying drawings, which illustrate specific embodiments that can be used to practice the present application. The directional terms mentioned in this application, such as [ upper ], [ lower ], [ front ], [ rear ], [ left ], [ right ], [ inner ], [ outer ], [ side ], etc., are only referring to the directions of the attached drawings. Accordingly, directional terminology is used to describe and understand the application and is not intended to be limiting of the application. In the drawings, like elements are denoted by the same reference numerals, and broken lines in the drawings indicate that they are not present in the structure, and only the shape and position of the structure are described.
Aiming at the technical problems that the structure of an OLED device with bottom emission in the prior art leads most TFTs to face an actual observer, so that the reflection interference of external light is caused, the luminous intensity of an OLED light source is reduced by more than 50% after an anti-reflection film is added on a luminous side, and the OLED material with low luminous intensity is a huge loss.
As shown in fig. 3, the present application provides an OLED display panel 200, the OLED display panel 200 including: a light emitting device layer 205; a TFT device layer 204 located on the light emitting side of the light emitting device layer 205; and a color blocking layer 202 located on the light emitting side of the light emitting device layer 205, for color filtering the light emitted from the light emitting device 204 and isolating the ambient light.
Specifically, in this embodiment, a spacer layer 203 for preventing the intrusion of the color blocking material into the light emitting device layer 205 is disposed on a side of the color blocking layer 202 facing the TFT device layer 204, the TFT device layer 204 includes a TFT layer 2041 and a planarization layer 2042, the TFT layer 2041 is located on the surface of the spacer layer 203, the planarization layer 2042 is located on the surface of the TFT layer 2041, an anode layer 2052 is prepared on the surface of the planarization layer 2042, and a light emitting layer 1043 is prepared on the surface of the anode layer 2052, referring to fig. 4. The TFT layer 2041 includes a substrate, a buffer layer provided over the substrate, and a plurality of thin film transistors provided over the buffer layer. The surface of the thin film transistors is provided with a planarization layer 2042, and the planarization layer 2042 is provided with a via hole. The spacer layer 203 is preferably a glass substrate, the spacer layer 203 may also be a transparent plastic substrate, the thickness of the spacer layer 203 is greater than or equal to 3 μm, the color resist layer 202 is formed on the surface of the spacer layer 203, the color resist layer 202 has a red color resist 2021, a green color resist 2022 and a blue color resist 2023, and the sides of the red color resist 2021, the green color resist 2022 and the blue color resist 2023 close to the light emitting device layer 205 are planes. The surface of the spacer layer 203 is provided with the packaging layer 201 covering the color resistance layer 202, the packaging layer 201 and the spacer layer 203 form an isolated water vapor and oxygen accommodating cavity, the red color resistance 2021, the green color resistance 2022 and the blue color resistance 2023 are adjacent and are arranged in the accommodating cavity at intervals in an inkjet printing mode, the materials of the red color resistance 2021, the green color resistance 2022 and the blue color resistance 2023 are preferably perovskite ink, the packaging layer 201 comprises a first inorganic layer, a second inorganic layer and an organic layer positioned between the first inorganic layer and the second inorganic layer, the first inorganic layer is close to the color resistance layer, arrangement of the red color resistance 2021, the green color resistance 2022 and the blue color resistance 2023 is facilitated, the packaging layer 201 is made of transparent materials, brightness and viewing angle of emergent light rays from the color resistance layer 202 are facilitated to be enlarged, and the problem that organic substances in the color resistance layer 202 overflow to cause aging failure of an OLED device is avoided.
The TFT layer 2041 includes a substrate, a buffer layer provided over the substrate; a plurality of TFTs disposed on the buffer layer, the TFTs including an active layer prepared on the buffer layer, a gate insulating layer prepared on the active layer, and a gate electrode prepared on the gate insulating layer; an interlayer insulating layer prepared on the buffer layer, source and drain electrodes prepared on the interlayer insulating layer, and a planarization layer 2042 prepared on the interlayer insulating layer. The interlayer insulating layer covers the light shielding layer, the buffer layer, the active layer, the gate insulating layer, and the gate electrode. The orthographic projection of the shading layer on the substrate covers the orthographic projection of the channel on the substrate, so that the shading layer can completely cover the channel, the active layer is prevented from being irradiated by light, the negative drift of the threshold voltage of the thin film transistor is avoided, and the working stability of the thin film transistor is improved. The light emitting device layer 205 is located on a side of the TFT device layer 204 away from the color resist layer 202, and includes an anode layer 2052 and a pixel defining layer 2051 located above the anode layer 2052, where the pixel defining layer 2051 is separately disposed to form a pixel opening, and the light emitting layer 2053 is tiled on the anode layer 2052, and the cathode layer 2054 is tiled on the light emitting layer 2053. The anode 2052 is electrically contacted with the drain electrode in the thin film transistor through a via hole, the source electrode in the thin film transistor is connected with the anode of an external power supply, the cathode of the external power supply is connected with the power supply wiring layer through a binding area, the corresponding electric number is transmitted to the cathode layer 2054 in the display area through the power supply wiring layer, when the positive voltage and the negative voltage of the external power supply are 2V to 10V, the anode layer 2052 generates holes, the cathode layer 2054 generates electrons, the light-emitting layer 2053 meets, the electrons and the holes are respectively negatively charged and positively charged, the electrons and the holes are mutually attracted to excite organic materials in the light-emitting layer 2053 to emit light so as to realize the normal operation of the OLED display panel 200, in the embodiment, a hole transmission layer is further arranged between the anode 2052 and the light-emitting layer 2053, an electron transmission layer is further arranged between the light-emitting layer 2053 and the cathode layer 2054, the hole transmission layer and the electron transmission layer improve the light-emitting efficiency of the light-emitting layer 2053, and the light-emitting brightness of the light-emitting layer 2053 can be adjusted by controlling the voltage of the external power supply. When voltage is input, charges of the hole transport layer and the cathode layer are combined in the light-emitting layer to emit light, and according to different formulas, three primary colors of red, green and blue (R, G, B) can be generated to form basic colors. In this embodiment, the light emitting device layer 205 further includes a plurality of three primary color light emitting devices arranged in an array, the color blocking layer includes three primary color blocks corresponding to the three primary color light emitting devices, the three primary color light emitting devices are a red color OLED, a green color OLED, and a blue color OLED, the three primary color blocks include a red color block 2021, a green color block 2022, and a blue color block 2023, wherein the red color OLED is aligned with the red color block 2021, the green color OLED is aligned with the green color block 2022, and the blue color OLED is aligned with the blue color block 2023. The protective cover 206 includes a black matrix 2062 and a hard coating 2061 on the surface of the black matrix 2062.
After the light S4 emitted by the light emitting layer 2053 passes through the TFT device layer 204, the color filter layer 202 color filters the light S4 to form pure light, when the external light S5 and the external light S6 are incident on the color filter layer 202, a small part of the external light S5 and the external light S6 are absorbed by the color filter layer 202, and most of the external light S5 and the external light S6 are totally reflected on the color filter layer 202, so that the effect of isolating the ambient light is achieved, the color mixing of the light S4 is avoided, the light emitting intensity of the whole OLED display panel 200 is improved, the color filter layer 202 replaces an anti-reflection film, and the working environment of the OLED display panel 200 is improved.
As shown in fig. 5, another schematic structure of the color resistance layer 202 in the OLED display panel 200 is provided, in this embodiment, the color resistance layer 202 has a red color resistance 2021, a green color resistance 2022 and a blue color resistance 2023, and one side of the red color resistance 2021, the green color resistance 2022 and the blue color resistance 2023, which is close to the light emitting device layer 205, is provided with a concave surface, so that after the light emitted from the light emitting device layer 205 passes through the concave surface, the light emitting angle of the light emitting device layer 205 is increased, the light emitting intensity and the viewing angle of the OLED display panel 200 are increased, and the display quality of the OLED display panel 200 is improved.
According to the above OLED display panel, the present application further provides a method for preparing an OLED display panel, as shown in fig. 6, the method for preparing an OLED display panel includes:
s101, providing a glass substrate, preparing a TFT device layer on the surface of the glass substrate, inverting the glass substrate and the TFT device layer, and preparing a color resistance layer on one side of the glass substrate far away from the TFT device layer.
S102, inverting the color resistance layer, the glass substrate and the TFT device layer again, and preparing a light-emitting device layer on one side of the TFT device layer far away from the color resistance layer.
Specifically, as shown in fig. 7, a TFT device layer 204 is prepared on the surface of a spacer layer 203, where the spacer layer 203 is preferably a glass substrate, and the TFT device layer 204 includes a substrate and a buffer layer disposed on the substrate; a plurality of thin film transistors disposed on the buffer layer; the TFT comprises an active layer, a gate insulating layer and a grid electrode, wherein the active layer is prepared on a buffer layer, the grid insulating layer is prepared on the active layer, and the grid electrode is prepared on the gate insulating layer; an interlayer insulating layer prepared on the buffer layer, source and drain electrodes prepared on the interlayer insulating layer, and a planarization layer 2031 prepared on the interlayer insulating layer. The interlayer insulating layer covers the light shielding layer, the buffer layer, the active layer, the gate insulating layer, and the gate electrode. As shown in fig. 8, spacer layer 203 and TFT device layer 204 are inverted, with spacer layer 203 being located above TFT device layer 204. As shown in fig. 9, a color resist layer 202 is formed on the side of the spacer layer 203 away from the TFT device layer 204, where the color resist layer 202 has a red color resist 2021, a green color resist 2022 and a blue color resist 2023, and the sides of the red color resist 2021, the green color resist 2022 and the blue color resist 2023 near the light emitting device layer 205 are planar, and in another embodiment, the sides of the red color resist 2021, the green color resist 2022 and the blue color resist 2023 near the light emitting device layer 205 are concave. As shown in fig. 10, an encapsulation layer 201 covering the color resist layer 202 is disposed on the surface of the spacer layer 203, and the encapsulation layer 201 includes a first inorganic layer, a second inorganic layer, and an organic layer disposed between the first inorganic layer and the second inorganic layer, where the first inorganic layer is disposed near the color resist layer 202. As shown in fig. 11, the encapsulation layer 201, the color resist layer 202, the spacer layer 203, and the TFT device layer 204 are inverted again, the TFT device layer 204 being uppermost, and the encapsulation layer 201 being lowermost. As shown in fig. 12, a light emitting device layer 205 is prepared on the side of the TFT device layer remote from the color resist layer. The light emitting device layer 205 includes an anode 2052 and a pixel defining layer 2051 on the surface of the planarization layer, and the pixel defining layer 2051 is separately disposed to form a pixel opening, in which the light emitting layer 2053 is tiled on the anode layer 2052 and the cathode layer 2054 is tiled on the light emitting layer 2053. The anode 2052 is in electrical contact with the drain electrode in the thin film transistor through a via. The light emitting device layer 204 surface is also provided with a protective cover plate 206 comprising a black matrix 2052 and a hard coating 2051 on the surface of the black matrix 2052.
The application provides an OLED display panel and preparation method thereof, OLED display panel includes the light emitting device layer in this application, TFT device layer and look hinder the layer, wherein, TFT device layer and look hinder the layer and all be located the light-emitting side of light emitting device layer, look hinder the layer and be used for carrying out color filtration to the emergent light of light emitting device, and be used for keeping apart ambient light, the antireflection film in the bottom emission OLED device has been replaced, the luminous intensity of whole OLED device has been improved, the operational environment of OLED display panel is improved, look hinders the layer and is provided with the spacer layer that is used for separating the invasion light emitting device layer of the material of preventing to hinder the one side of TFT device layer, organic matter overflows in the look hinder the layer, solve the ageing problem of OLED device, look hinder layer is close to light emitting device layer one side and is provided with the concave surface in addition, increase the emergent angle of the emergent light of light emitting device layer, promote OLED display panel's display quality.
In summary, although the present application has been described with reference to the preferred embodiments, the preferred embodiments are not intended to limit the application, and those skilled in the art can make various modifications and adaptations without departing from the spirit and scope of the application, and the scope of the application is therefore defined by the claims.
Claims (6)
- An oled display panel, comprising:a light emitting device layer;a TFT device layer positioned on the light emitting side of the light emitting device layer; the method comprises the steps of,the color resistance layer is positioned on the light emergent side of the TFT device layer and is used for performing color filtration on emergent light of the light-emitting device and isolating ambient light;the light-emitting device comprises a TFT device layer, a color resistance layer, a packaging layer, a first inorganic layer, a second inorganic layer and an organic layer, wherein the side, facing the TFT device layer, of the color resistance layer is provided with a spacer layer for preventing a color resistance material from invading the light-emitting device layer, the color resistance layer is formed on the surface of the spacer layer, the surface of the spacer layer is provided with the packaging layer for covering the color resistance layer, the packaging layer is made of transparent materials, the packaging layer comprises the first inorganic layer, the second inorganic layer and the organic layer positioned between the first inorganic layer and the second inorganic layer, and the first inorganic layer is close to the color resistance layer;the concave surface is arranged on one side of the color resistance layer, which is close to the light-emitting device layer, so that the emergent light emergent angle of the light-emitting device layer is increased;and a total reflection interface for reflecting external light is formed between the color resistance layer and the packaging layer.
- 2. The OLED display panel of claim 1, wherein the spacer layer is a glass substrate.
- 3. The OLED display panel of claim 1, wherein the material of the color-blocking layer is perovskite ink.
- 4. A display panel according to claim 3, wherein the light emitting device layer further comprises a plurality of three primary color light emitting devices arranged in an array, and the color resist layer comprises three primary color resists arranged corresponding to the three primary color light emitting devices.
- 5. The OLED display panel of claim 1, wherein the TFT device layer includes a substrate, a buffer layer disposed on the substrate, a plurality of thin film transistors disposed on the buffer layer, and a planarization layer disposed on the plurality of thin film transistors, the planarization layer having a via disposed thereon; the light-emitting device layer comprises an anode positioned on the surface of the planarization layer, a light-emitting layer positioned on the surface of the anode, and a cathode positioned on the surface of the light-emitting layer, wherein the anode is electrically connected with the drain electrode in the thin film transistor through the via hole.
- 6. A method for manufacturing a display panel, comprising:s101, providing a glass substrate, preparing a TFT device layer on the surface of the glass substrate, inverting the glass substrate and the TFT device layer, and preparing a color resistance layer and a packaging layer covering the color resistance layer on one side of the glass substrate far away from the TFT device layer; a total reflection interface for reflecting external light is formed between the color resistance layer and the packaging layer;s102, inverting the color resistance layer, the glass substrate and the TFT device layer again, and preparing a light-emitting device layer on one side of the TFT device layer far away from the color resistance layer;the packaging layer is made of transparent materials and comprises a first inorganic layer, a second inorganic layer and an organic layer positioned between the first inorganic layer and the second inorganic layer, wherein the first inorganic layer is close to the color resistance layer; and a concave surface is arranged on one side of the color resistance layer, which is close to the light-emitting device layer, so as to increase the emergent angle of emergent light of the light-emitting device layer.
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| CN202010403170.XA CN111584573B (en) | 2020-05-13 | 2020-05-13 | OLED display panel and preparation method thereof |
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| CN202010403170.XA CN111584573B (en) | 2020-05-13 | 2020-05-13 | OLED display panel and preparation method thereof |
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| CN111584573A CN111584573A (en) | 2020-08-25 |
| CN111584573B true CN111584573B (en) | 2024-02-09 |
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| CN113328047B (en) * | 2021-06-02 | 2022-06-10 | 武汉天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
| CN114647109A (en) * | 2022-03-30 | 2022-06-21 | Tcl华星光电技术有限公司 | Liquid crystal display panel and display device |
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