CN111584573A - OLED display panel and preparation method thereof - Google Patents
OLED display panel and preparation method thereof Download PDFInfo
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- CN111584573A CN111584573A CN202010403170.XA CN202010403170A CN111584573A CN 111584573 A CN111584573 A CN 111584573A CN 202010403170 A CN202010403170 A CN 202010403170A CN 111584573 A CN111584573 A CN 111584573A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
Abstract
The application provides an OLED display panel and a preparation method thereof, the OLED display panel comprises a light-emitting device layer, a TFT device layer and a color resistance layer, wherein, the TFT device layer and the color resistance layer are both arranged on the light-emitting side of the light-emitting device layer, the color resistance layer is used for filtering the color of the emergent light of the light-emitting device, and is used for isolating the ambient light, replaces an antireflection film in a bottom-emitting OLED device, improves the luminous intensity of the whole OLED device, improves the working environment of the OLED display panel, and avoids the overflow of organic substances in the color resistance layer and solves the aging failure problem of the OLED device because the spacing layer used for isolating color resistance materials from invading the luminous device layer is arranged on one side of the color resistance layer facing the TFT device layer, in addition, a concave surface is arranged on one side, close to the light-emitting device layer, of the color resistance layer, the emergent angle of emergent light of the light-emitting device layer is increased, and the display quality of the OLED display panel is improved.
Description
Technical Field
The application relates to the technical field of display, in particular to an OLED display panel and a preparation method thereof.
Background
Compared with the traditional LCD, the OLED device has the advantages of light weight, wide visual angle, fast response time, low temperature resistance, high luminous efficiency and the like, so that the OLED device is always considered as a next-generation novel display technology in the display industry.
For the bottom-emitting OLED display panel, limited by the light-emitting level of the OLED material, a color filter is needed to be adopted for color filtering to display appropriate light color, a certain viewing angle is provided, most of the TFTs face to an actual observer due to the structure of the bottom-emitting OLED device, so that the external light is reflected greatly, an anti-reflection film which can reduce the light-emitting intensity of an OLED light source by nearly 50% needs to be added on the light-emitting side, and the OLED material with low light-emitting intensity is greatly lost. Specifically, as shown in fig. 1 and fig. 2, the OLED display panel 100 includes an anti-reflection film 101, and an array substrate 102 disposed on a surface of the anti-reflection film 101, wherein the array substrate 102 includes a TFT device layer and a planarization layer 1022 disposed on a surface of the TFT device layer 1021, a color resist layer 103 is disposed between the TFT device layer 1021 and the planarization layer 1022, the color resist layer 103 includes a red color resist 1031, a green color resist 1032, and a blue color resist 1033, the planarization layer 1022 is disposed with a light emitting layer 104, and an encapsulation layer 105 is disposed on a surface of the light emitting layer 104, wherein the light emitting layer 104 includes a pixel definition layer 1041, an anode layer 1042 disposed in an opening region formed by the pixel definition layer 1041, a light emitting unit 1043, and a cathode layer 1044, and since the OLED display panel 100 is bottom-emitting, when light rays S1 emitted from the light emitting layer 104 are about to pass through the array substrate 102, a large reflection of part of external light S2, this causes color mixing of the outgoing light S1, and the anti-reflective film 101 is required to be added, and the anti-reflective film 101 reduces the intensity of the outgoing light of the light-emitting layer 103 by nearly 50%, which is a huge loss for the OLED material whose own light-emitting intensity is not high.
In summary, it is necessary to design an OLED display panel and a method for manufacturing the same, so as to solve the technical problems that in the prior art, most TFTs face a practical observer due to the structure of the bottom-emitting OLED device, so that the external light reflection interference is caused, and after an anti-reflection film is added on the light-emitting side, the light-emitting intensity of an OLED light source is reduced by more than 50%, which is a great loss to the OLED material with low light-emitting intensity.
Content of application
The application provides a display panel and a preparation method thereof, which can solve the technical problems that in the prior art, most of TFTs face to an actual observer due to the structure of an OLED device emitted by a bottom, external light reflection interference is caused, the luminous intensity of an OLED light source is reduced by more than 50% after an antireflection film is added on the luminous side, and the OLED material with low luminous intensity is greatly lost.
The application provides an OLED display panel, includes: a light emitting device layer; the TFT device layer is positioned on the light emitting side of the light emitting device layer; and the color resistance layer is positioned on the light emitting side of the TFT device layer and used for filtering the color of emergent light of the light emitting device and isolating the ambient light.
According to a preferred embodiment of the present application, a spacer layer for isolating intrusion of color-resist material into the light-emitting device layer is disposed on a side of the color-resist layer facing the TFT device layer.
According to a preferred embodiment of the present application, the spacer layer is a glass substrate.
According to a preferred embodiment of the present application, the color resist layer is formed on the surface of the glass substrate, and an encapsulation layer covering the color resist layer is disposed on the surface of the glass substrate.
According to a preferred embodiment of the present application, the encapsulation layer includes a first inorganic layer, a second inorganic layer, and an organic layer between the first inorganic layer and the second inorganic layer, the first inorganic layer being disposed adjacent to the color-resist layer.
According to a preferred embodiment of the present application, a concave surface is disposed on one side of the color resistance layer close to the light emitting device layer to increase an emergent light angle of the light emitting device layer.
According to a preferred embodiment of the present application, the material of the color-resist layer is perovskite ink.
According to a preferred embodiment of the present application, the light emitting device layer further includes a plurality of three primary color light emitting devices arranged in an array, and the color resistance layer includes three primary color resistances corresponding to the three primary color light emitting devices.
According to a preferred embodiment of the present application, the TFT device layer includes a substrate, a buffer layer disposed on the substrate, a plurality of thin film transistors disposed on the buffer layer, and a planarization layer disposed on the plurality of thin film transistors, the planarization layer having via holes disposed thereon; the light-emitting device layer comprises an anode positioned on the surface of the planarization layer, a light-emitting layer positioned on the surface of the anode, and a cathode positioned on the surface of the light-emitting layer, wherein the anode is electrically connected with the drain electrode in the thin film transistor through the through hole.
According to the display panel, the application also provides a display panel preparation method, which comprises the following steps:
s101, providing a glass substrate, preparing a TFT device layer on the surface of the glass substrate, inverting the glass substrate and the TFT device layer, and preparing a color resistance layer on one side of the glass substrate, which is far away from the TFT device layer;
and S102, inverting the color resistance layer, the glass substrate and the TFT device layer again, and preparing a light-emitting device layer on one side of the TFT device layer, which is far away from the color resistance layer.
The application provides an OLED display panel and a preparation method thereof, the OLED display panel comprises a light-emitting device layer, a TFT device layer and a color resistance layer, wherein, the TFT device layer and the color resistance layer are both arranged on the light-emitting side of the light-emitting device layer, the color resistance layer is used for filtering the color of the emergent light of the light-emitting device, and is used for isolating the ambient light, replaces an antireflection film in a bottom-emitting OLED device, improves the luminous intensity of the whole OLED device, improves the working environment of the OLED display panel, and avoids the overflow of organic substances in the color resistance layer and solves the aging failure problem of the OLED device because the spacing layer used for isolating color resistance materials from invading the luminous device layer is arranged on one side of the color resistance layer facing the TFT device layer, in addition, a concave surface is arranged on one side, close to the light-emitting device layer, of the color resistance layer, the emergent angle of emergent light of the light-emitting device layer is increased, and the display quality of the OLED display panel is improved.
Drawings
In order to illustrate the embodiments or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the application, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an OLED display panel in the prior art.
Fig. 2 is a schematic diagram illustrating a position of a color resistance layer in an OLED display panel in the prior art.
Fig. 3 is a schematic structural diagram of an OLED display panel according to the present application.
Fig. 4 is a schematic diagram illustrating a position of a color resistance layer in an OLED display panel.
Fig. 5 is another structural schematic diagram of a color-resist layer of an OLED display panel according to the present application.
Fig. 6 is a schematic view of a process for manufacturing an OLED display panel according to the present application.
Fig. 7 to 12 are schematic structural diagrams in the process of manufacturing an OLED display panel according to the present application.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings, which are included to illustrate specific embodiments that can be implemented by the application. Directional phrases used in this application, such as [ upper ], [ lower ], [ front ], [ rear ], [ left ], [ right ], [ inner ], [ outer ], [ side ], etc., refer only to the directions of the attached drawings. Accordingly, the directional terminology is used for purposes of illustration and understanding, and is in no way limiting. In the drawings, elements having similar structures are denoted by the same reference numerals, and broken lines in the drawings indicate that the elements do not exist in the structures, and only the shapes and positions of the structures are explained.
The OLED device structure that makes most TFT orientation actual observer to the bottom emission in prior art leads to the interference of external light reflection, adds anti-reflection film after the luminous side, leads to OLED light source luminous intensity to reduce nearly 50% more, is the technical problem of a huge loss to the OLED material that luminous intensity is just not high itself, and this problem can be solved to this embodiment.
As shown in fig. 3, the present application provides an OLED display panel 200, where the OLED display panel 200 includes: a light emitting device layer 205; a TFT device layer 204 on the light-emitting side of the light-emitting device layer 205; and a color resist layer 202 on the light exit side of the light emitting device layer 205 for color filtering the light exiting from the light emitting device layer 204 and isolating the ambient light.
Specifically, in this embodiment, a spacer layer 203 for isolating a color-resisting material from invading the light-emitting device layer 205 is disposed on a side of the color-resisting layer 202 facing the TFT device layer 204, the TFT device layer 204 includes a TFT layer 2041 and a planarization layer 2042, the TFT layer 2041 is disposed on a surface of the spacer layer 203, the planarization layer 2042 is disposed on a surface of the TFT layer 2041, an anode layer 2052 is disposed on a surface of the planarization layer 2042, and a light-emitting layer 1043 is disposed on a surface of the anode layer 2052, refer to fig. 4. The TFT layer 2041 includes a substrate, a buffer layer disposed on the substrate, and a plurality of thin film transistors disposed on the buffer layer. The planarization layer 2042 is disposed on the surface of the plurality of thin film transistors, and the planarization layer 2042 is provided with via holes. The spacer layer 203 is preferably a glass substrate, the spacer layer 203 may also be a transparent plastic substrate, the thickness of the spacer layer 203 is greater than or equal to 3 μm, the color-resist layer 202 is formed on the surface of the spacer layer 203, the color-resist layer 202 has a red color resist 2021, a green color resist 2022, and a blue color resist 2023, and the sides of the red color resist 2021, the green color resist 2022, and the blue color resist 2023 close to the light-emitting device layer 205 are flat. The surface of the spacer layer 203 is provided with an encapsulating layer 201 covering the color resistance layer 202, the encapsulating layer 201 and the spacer layer 203 form a water vapor and oxygen insulating accommodating cavity, the red color resistor 2021, the green color resistor 2022 and the blue color resistor 2023 are adjacently arranged in the accommodating cavity at intervals in an ink jet printing mode, the materials of the red color resistor 2021, the green color resistor 2022 and the blue color resistor 2023 are preferably perovskite ink, the encapsulating layer 201 comprises a first inorganic layer, a second inorganic layer and an organic layer positioned between the first inorganic layer and the second inorganic layer, the first inorganic layer is arranged close to the color resistance layer, the arrangement of the red color resistor 2021, the green color resistor 2022 and the blue color resistor 2023 is facilitated, the material of the encapsulating layer 201 is a transparent material, the brightness and the viewing angle of light emitted from the color resistance layer 202 are facilitated to be enlarged, and the problem of accelerated aging failure of the OLED device caused by overflow of organic substances in the color resistance layer 202 is avoided.
The TFT layer 2041 includes a substrate, a buffer layer disposed on the substrate; the TFT comprises an active layer prepared on the buffer layer, a gate insulating layer prepared on the active layer and a grid electrode prepared on the gate insulating layer; an interlayer insulating layer formed on the buffer layer, a source electrode and a drain electrode formed on the interlayer insulating layer, and a planarization layer 2042 formed on the interlayer insulating layer. The interlayer insulating layer covers the light-shielding layer, the buffer layer, the active layer, the gate insulating layer and the gate electrode. The orthographic projection of the shading layer on the substrate covers the orthographic projection of the channel on the substrate, so that the shading layer can completely cover the channel, the active layer is prevented from being irradiated by light, the threshold voltage of the thin film transistor is prevented from generating negative drift, and the working stability of the thin film transistor is improved. The light emitting device layer 205 is located on the side of the TFT device layer 204 far from the color resistance layer 202, and includes an anode layer 2052 and a pixel definition layer 2051 located above the anode 2052, the pixel definition layer 2051 is separately disposed to form a pixel opening, in the pixel opening, the light emitting layer 2053 is tiled on the anode layer 2052, and the cathode layer 2054 is tiled on the light emitting layer 2053. The anode 2052 is electrically contacted with a drain electrode in a thin film transistor through a via hole, a source electrode in the thin film transistor is connected with an anode of an external power supply, a cathode of the external power supply transfers corresponding electric signals to a power supply wiring layer through a binding region, finally, the power supply wiring layer transfers the corresponding electric signals to a cathode layer 2054 in a display region, when the positive electrode and the negative electrode of the external power supply are in direct current voltage of 2V to 10V, the anode layer 2052 generates holes, the cathode layer 2054 generates electrons, the electrons and the holes meet at the light emitting layer 2053 and are respectively negatively charged and positively charged and mutually attracted to excite an organic material in the light emitting layer 2053 to emit light so as to realize the normal work of the OLED display panel 200, in the embodiment, a hole transport layer is further arranged between the anode 2052 and the light emitting layer 2053, an electron transport layer is further arranged between the light emitting layer 2053 and the cathode layer 2054, by controlling the voltage of the external power supply, the luminance of the light emitting layer 2053 can be adjusted, and the higher the voltage is, the higher the luminance is, and the darker the luminance is. When a voltage is applied, the charges of the hole transport layer and the cathode layer are combined in the light emitting layer to emit light, and according to different formulas, three primary colors of red, green and blue (R, G, B) are generated to form basic colors. In this embodiment, the light emitting device layer 205 further includes a plurality of three primary color light emitting devices arranged in an array, the color resistance layer includes three primary color resistors corresponding to the three primary color light emitting devices, the three primary color light emitting devices are red color OLEDs, green color OLEDs, and blue color OLEDs, the three primary color resistors include red color resistors 2021, green color resistors 2022, and blue color resistors 2023, wherein the red color OLEDs and the red color resistors 2021 are aligned, the green color OLEDs and the green color resistors 2022 are aligned, and the blue color OLEDs and the blue color resistors 2023 are aligned. The protective cover 206 includes a black matrix 2062 and a hard coat layer 2061 on the surface of the black matrix 2062.
After the emergent light ray S4 of the light emitting layer 2053 passes through the TFT device layer 204, the color resistance layer 202 performs color filtering on the light ray S4 to form a pure light ray, when the external light ray S5 and the external light ray S6 enter the color resistance layer 202, a small part of the external light ray S5 and the external light ray S6 are absorbed by the color resistance layer 202, and most of the external light ray S5 and the external light ray S6 are totally reflected on the color resistance layer 202 to achieve the effect of isolating the ambient light, thereby avoiding color mixing of the emergent light ray S4, improving the luminous intensity of the whole OLED display panel 200, and the color resistance layer 202 replaces an anti-reflection film, thereby improving the working environment of the OLED display panel 200.
As shown in fig. 5, the present application provides another structural schematic diagram of the color-resist layer 202 in the OLED display panel 200, in this embodiment, the color-resist layer 202 has a red color resist 2021, a green color resist 2022, and a blue color resist 2023, and a concave surface is disposed on one side of the red color resist 2021, the green color resist 2022, and the blue color resist 2023 close to the light-emitting device layer 205, so that the emergent light of the light-emitting device layer 205 is transmitted through the concave surface, thereby increasing the emergent angle of the emergent light, increasing the intensity and viewing angle of the emergent light of the OLED display panel 200, and improving the display quality of the OLED display panel 200, and other structures are the same as those in fig. 2, which.
According to the above OLED display panel, the present application also provides a method for manufacturing an OLED display panel, as shown in fig. 6, the method for manufacturing an OLED display panel includes:
s101, providing a glass substrate, preparing a TFT device layer on the surface of the glass substrate, inverting the glass substrate and the TFT device layer, and preparing a color resistance layer on one side of the glass substrate, which is far away from the TFT device layer.
And S102, inverting the color resistance layer, the glass substrate and the TFT device layer again, and preparing a light-emitting device layer on one side of the TFT device layer, which is far away from the color resistance layer.
Specifically, as shown in fig. 7, a TFT device layer 204 is prepared on the surface of the spacer layer 203, in this embodiment, the spacer layer 203 is preferably a glass substrate, and the TFT device layer 204 includes a substrate and a buffer layer disposed on the substrate; a plurality of thin film transistors disposed on the buffer layer; the TFT comprises an active layer prepared on the buffer layer, a gate insulating layer prepared on the active layer and a gate electrode prepared on the gate insulating layer; an interlayer insulating layer prepared on the buffer layer, a source electrode and a drain electrode prepared on the interlayer insulating layer, and a planarization layer 2031 prepared on the interlayer insulating layer. The interlayer insulating layer covers the light-shielding layer, the buffer layer, the active layer, the gate insulating layer and the gate electrode. As shown in fig. 8, the spacer layer 203 and the TFT device layer 204 are inverted, with the spacer layer 203 being located above the TFT device layer 204. As shown in fig. 9, the color resist layer 202 is formed on the side of the spacer layer 203 away from the TFT device layer 204, the color resist layer 202 has a red color resist 2021, a green color resist 2022 and a blue color resist 2023, the side of the red color resist 2021, the side of the green color resist 2022 and the side of the blue color resist 2023 close to the light emitting device layer 205 are flat, and the side of the red color resist 2021, the side of the green color resist 2022 and the side of the blue color resist 2023 close to the light emitting device layer 205 are concave in another embodiment. As shown in fig. 10, an encapsulation layer 201 covering the color-resist layer 202 is disposed on the surface of the spacer layer 203, and the encapsulation layer 201 includes a first inorganic layer, a second inorganic layer, and an organic layer disposed between the first inorganic layer and the second inorganic layer, and the first inorganic layer is disposed adjacent to the color-resist layer 202. As shown in fig. 11, the encapsulation layer 201, the color-resist layer 202, the spacer layer 203, and the TFT device layer 204 are inverted again, with the TFT device layer 204 being uppermost and the encapsulation layer 201 being lowermost. As shown in fig. 12, a light emitting device layer 205 is prepared on the side of the TFT device layer away from the color resist layer. The light emitting device layer 205 includes an anode layer 2052 on the surface of the planarization layer and a pixel definition layer 2051, the pixel definition layer 2051 being disposed apart to form a pixel opening in which a light emitting layer 2053 is tiled over the anode layer 2052 and a cathode layer 2054 is tiled over the light emitting layer 2053. The anode 2052 is in electrical contact with a drain of the thin film transistor through a via. The protective cover 206 is further disposed on the surface of the light emitting device layer 204 and includes a black matrix 2052 and a hard coating 2051 on the surface of the black matrix 2052.
The application provides an OLED display panel and a preparation method thereof, the OLED display panel comprises a light-emitting device layer, a TFT device layer and a color resistance layer, wherein, the TFT device layer and the color resistance layer are both arranged on the light-emitting side of the light-emitting device layer, the color resistance layer is used for filtering the color of the emergent light of the light-emitting device, and is used for isolating the ambient light, replaces an antireflection film in a bottom-emitting OLED device, improves the luminous intensity of the whole OLED device, improves the working environment of the OLED display panel, and avoids the overflow of organic substances in the color resistance layer and solves the aging failure problem of the OLED device because the spacing layer used for isolating color resistance materials from invading the luminous device layer is arranged on one side of the color resistance layer facing the TFT device layer, in addition, a concave surface is arranged on one side, close to the light-emitting device layer, of the color resistance layer, the emergent angle of emergent light of the light-emitting device layer is increased, and the display quality of the OLED display panel is improved.
In summary, although the present application has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present application, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present application, so that the scope of the present application shall be determined by the scope of the appended claims.
Claims (10)
- An OLED display panel, comprising:a light emitting device layer;the TFT device layer is positioned on the light emitting side of the light emitting device layer; and the number of the first and second groups,and the color resistance layer is positioned on the light emitting side of the TFT device layer and used for filtering the color of emergent light of the light emitting device and isolating ambient light.
- 2. The OLED display panel of claim 1, wherein a side of the color-resist layer facing the TFT device layer is provided with a spacer layer for isolating intrusion of color-resist material into the light-emitting device layer.
- 3. The OLED display panel of claim 2, wherein the spacer layer is a glass substrate.
- 4. The OLED display panel of claim 3, wherein the color-resist layer is formed on the surface of the glass substrate, and an encapsulation layer covering the color-resist layer is disposed on the surface of the glass substrate.
- 5. The OLED display panel of claim 4, wherein the encapsulation layer comprises a first inorganic layer, a second inorganic layer, and an organic layer between the first inorganic layer and the second inorganic layer, the first inorganic layer disposed adjacent to the color-resist layer.
- 6. The OLED display panel of claim 5, wherein the color resistance layer is provided with a concave surface on a side close to the light emitting device layer to increase an emergent light angle of the light emitting device layer.
- 7. The OLED display panel of claim 6, wherein the material of the color-resist layer is a perovskite ink.
- 8. The display panel according to claim 7, wherein the light emitting device layer further comprises a plurality of three primary color light emitting devices arranged in an array, and the color resistance layer comprises three primary color resistors disposed corresponding to the three primary color light emitting devices.
- 9. The OLED display panel of claim 1, wherein the TFT device layer comprises a substrate, a buffer layer disposed on the substrate, a plurality of thin film transistors disposed on the buffer layer, and a planarization layer disposed on the plurality of thin film transistors, the planarization layer having vias disposed thereon; the light-emitting device layer comprises an anode positioned on the surface of the planarization layer, a light-emitting layer positioned on the surface of the anode, and a cathode positioned on the surface of the light-emitting layer, wherein the anode is electrically connected with the drain electrode in the thin film transistor through the through hole.
- 10. A method for manufacturing a display panel includes:s101, providing a glass substrate, preparing a TFT device layer on the surface of the glass substrate, inverting the glass substrate and the TFT device layer, and preparing a color resistance layer on one side of the glass substrate, which is far away from the TFT device layer;and S102, inverting the color resistance layer, the glass substrate and the TFT device layer again, and preparing a light-emitting device layer on one side of the TFT device layer, which is far away from the color resistance layer.
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| CN202010403170.XA CN111584573B (en) | 2020-05-13 | 2020-05-13 | OLED display panel and preparation method thereof |
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| CN202010403170.XA CN111584573B (en) | 2020-05-13 | 2020-05-13 | OLED display panel and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113328047A (en) * | 2021-06-02 | 2021-08-31 | 武汉天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
| CN113471263A (en) * | 2021-06-30 | 2021-10-01 | 上海天马微电子有限公司 | Display panel and display device |
| CN114647109A (en) * | 2022-03-30 | 2022-06-21 | Tcl华星光电技术有限公司 | Liquid crystal display panel and display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904102A (en) * | 2012-12-26 | 2014-07-02 | 三星显示有限公司 | Organic light emitting diode (oled) display |
| CN108345142A (en) * | 2017-01-25 | 2018-07-31 | 群创光电股份有限公司 | Show equipment |
| CN109817676A (en) * | 2019-01-30 | 2019-05-28 | 武汉华星光电半导体显示技术有限公司 | Display panel and touch control display |
| CN110854173A (en) * | 2019-11-26 | 2020-02-28 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel |
-
2020
- 2020-05-13 CN CN202010403170.XA patent/CN111584573B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904102A (en) * | 2012-12-26 | 2014-07-02 | 三星显示有限公司 | Organic light emitting diode (oled) display |
| CN108345142A (en) * | 2017-01-25 | 2018-07-31 | 群创光电股份有限公司 | Show equipment |
| CN109817676A (en) * | 2019-01-30 | 2019-05-28 | 武汉华星光电半导体显示技术有限公司 | Display panel and touch control display |
| CN110854173A (en) * | 2019-11-26 | 2020-02-28 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113328047A (en) * | 2021-06-02 | 2021-08-31 | 武汉天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
| CN113471263A (en) * | 2021-06-30 | 2021-10-01 | 上海天马微电子有限公司 | Display panel and display device |
| CN114647109A (en) * | 2022-03-30 | 2022-06-21 | Tcl华星光电技术有限公司 | Liquid crystal display panel and display device |
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| Publication number | Publication date |
|---|---|
| CN111584573B (en) | 2024-02-09 |
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