CN111584533B - Micro light emitting diode display and forming method thereof - Google Patents
Micro light emitting diode display and forming method thereof Download PDFInfo
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- CN111584533B CN111584533B CN201910122428.6A CN201910122428A CN111584533B CN 111584533 B CN111584533 B CN 111584533B CN 201910122428 A CN201910122428 A CN 201910122428A CN 111584533 B CN111584533 B CN 111584533B
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- light emitting
- emitting diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Abstract
The invention relates to a micro light emitting diode display and a forming method thereof, wherein the method comprises providing a substrate provided with a plurality of micro light emitting diodes and at least one integrated circuit; and forming a flat layer to cover the micro light emitting diode and the integrated circuit. The flat layer serves as a light shielding layer and an anti-corrosion layer. The technical scheme of the invention has the advantages of simplifying the manufacturing process and/or having a flat upper surface, and the substrate (such as a glass substrate) of the micro light emitting diode display is not easy to crack or the integrated circuit is not damaged by pressure.
Description
Technical Field
The present invention relates to a micro light emitting diode, and more particularly, to a method for forming a micro light emitting diode display.
Background
A micro light emitting diode (microLED, mLED or μled) display panel is one type of flat panel display (flat panel display) that is comprised of individual micro Light Emitting Diodes (LEDs) with a size scale of 1-10 microns. Compared with the traditional liquid crystal display panel, the micro light emitting diode display panel has larger contrast ratio and quicker response time and consumes less power. Micro light emitting diodes (micro light emitting diodes) and Organic Light Emitting Diodes (OLEDs) have low power consumption characteristics, but they have higher brightness (brightness), higher luminous efficacy (luminous efficacy) and longer lifetime than organic light emitting diodes because they use a three-five diode technology (e.g., gan).
Fig. 1 shows a cross-sectional view of a conventional led display 100, in which a led 12 and an integrated circuit 13 are disposed on a glass substrate 11. The first passivation layer 14 is formed on the integrated circuit 13, and the second passivation layer 15 is formed on the micro light emitting diode 12 and the integrated circuit 13. Since the height of the integrated circuit 13 (e.g., 150 microns) is typically higher than the height of the micro light emitting diode 12 (e.g., less than 10 microns), the upper surface of the micro light emitting diode display 100 has a sharp contrast profile. This sharp contrast profile can cause uneven stress when the micro led display 100 is flipped over for subsequent fabrication of its back side. Therefore, the glass substrate 11 is easily broken or/and the integrated circuit 13 is damaged by pressure.
Therefore, there is a need to propose a novel method for forming a micro light emitting diode display to overcome the drawbacks of the conventional micro light emitting diode display.
Disclosure of Invention
In view of the foregoing, it is an object of the present invention to provide a method for forming a micro light emitting diode display, which has a simplified manufacturing process or/and a flat upper surface.
The aim and the technical problems of the invention are realized by adopting the following technical proposal. According to an embodiment of the invention, a method for forming a micro light emitting diode display includes the following steps. A substrate is provided, on which a plurality of micro light emitting diodes and at least one integrated circuit are disposed. A planarization layer is formed to cover the micro light emitting diode and the integrated circuit. The flat layer serves as a light shielding layer and an anti-corrosion layer.
The aim and the technical problems of the invention can be further realized by adopting the following technical measures.
The method of forming a micro light emitting diode display, wherein the substrate comprises glass.
The method of forming a micro light emitting diode display, wherein the planarization layer comprises a dark or black dye.
In the method for forming a micro light emitting diode display, the flat layer comprises room temperature vulcanizing material.
In the foregoing method for forming a micro light emitting diode display, the flat layer comprises an epoxy resin or a silicone-based adhesive.
In the method for forming a micro light emitting diode display, the flat layer comprises a molding material.
The method for forming a micro light emitting diode display further comprises: before forming the flat layer, forming a frame glue to enclose the micro light emitting diode and the at least one integrated circuit on the substrate, wherein the height of the frame glue is larger than that of the flat layer and the integrated circuit.
In the method for forming a micro light emitting diode display, the viscosity of the flat layer is smaller than that of the frame glue.
The method for forming a micro light emitting diode display further comprises: forming a light guide layer to cover the micro light emitting diode before forming the flat layer; and forming a reflecting layer on the light guide layer.
In the method for forming the micro light emitting diode display, the condensation of the flat layer is small enough, and the substrate is not deformed or broken during the drying process of the flat layer.
The aim of the invention and the solution of the technical problems are achieved by adopting the following technical proposal. According to the present invention, a micro light emitting diode display includes: a substrate; a plurality of micro-emitter tubes and at least one integrated circuit, which are arranged on the substrate; and a flat layer covering the micro light emitting diode and the at least one integrated circuit; wherein the flat layer is used as a light shielding layer and an anti-corrosion layer.
The aim and the technical problems of the invention can be further realized by adopting the following technical measures.
In the foregoing micro light emitting diode display, the substrate comprises glass.
In the foregoing micro light emitting diode display, the flat layer includes a dark or black dye.
In an embodiment, the flat layer includes room temperature vulcanizing material.
In an embodiment, the flat layer includes an epoxy resin or a silicone-based adhesive.
In the foregoing micro light emitting diode display, the flat layer includes a molding material.
The foregoing micro light emitting diode display further comprises: and the frame glue is arranged on the substrate to enclose the micro light emitting diode, the at least one integrated circuit and the flat layer, and the height of the frame glue is larger than that of the flat layer and the integrated circuit.
In the foregoing micro light emitting diode display, the viscosity of the flat layer is smaller than the viscosity of the frame glue.
The foregoing micro light emitting diode display further comprises: the light guide layer is formed on the micro light emitting diode and is positioned below the flat layer; and a reflection layer formed between the light guide layer and the flat layer.
In the foregoing micro light emitting diode display, the condensation of the flat layer is sufficiently small, and the substrate is not deformed or broken during the drying process of the flat layer.
By means of the technical scheme, the invention has at least the following advantages: the method for forming the micro light emitting diode display has the advantages of simplifying the manufacturing process and/or having a flat upper surface; the substrate (e.g., glass substrate) of the micro light emitting diode display is not easily broken or/and the integrated circuit is not damaged by pressure.
The foregoing description is only an overview of the present invention, and is intended to be implemented in accordance with the teachings of the present invention, as well as the preferred embodiments thereof, together with the following detailed description of the invention, given by way of illustration only, together with the accompanying drawings.
Drawings
FIG. 1 is a cross-sectional view of a conventional micro light emitting diode display with micro light emitting diodes and integrated circuits on a glass substrate.
Fig. 2A-4B are cross-sectional and top views illustrating a method of forming a micro led display according to an embodiment of the invention.
[ Main element symbols description ]
100: micro light emitting diode display 11: glass substrate
12: micro light emitting diode 13: integrated circuit
14: the first protective layer 15: a second protective layer
200: micro light emitting diode display 21: substrate board
22: micro light emitting diode 221: light guiding layer
222: reflective layer 23: integrated circuit
24: frame glue 25: flat layer
Detailed Description
Fig. 2A-4B are cross-sectional and top views of a method of forming a micro led display 200 according to an embodiment of the invention.
As shown in the cross-sectional view of fig. 2A and the top view of fig. 2B, a substrate 21 is provided, on which a micro light emitting diode 22 and at least one integrated circuit 23 are disposed. The substrate 21 may comprise glass or other material suitable for supporting the micro light emitting diode 22 and the integrated circuit 23. The integrated circuit 23 may be a driver and may be provided on the substrate 21 using a chip-on-glass (COG) technique. Although only a few micro leds 22 are shown, a very large number of micro leds 22 are typically disposed on the substrate 21. In this embodiment, the height of the integrated circuit 23 (e.g., 150 microns) is much greater than the height of the micro light emitting diode 22 (e.g., less than 10 microns).
The light guiding layer 221 may cover the micro light emitting diode 22 to transmit light generated by the micro light emitting diode 22. The reflective layer 222 (e.g., metal) may cover the light guiding layer 221 to reflect light generated by the micro light emitting diode 22.
As shown in the cross-sectional view of fig. 3A and the top view of fig. 3B, a frame or sealant 24 may be formed on the substrate 21 to enclose at least a portion of the micro light emitting diode 22 and the integrated circuit 23 on the substrate 21. In this embodiment, the frame glue 24 is rectangular and can be disposed around the substrate 21, and the frame glue 24 includes a first glue material (e.g. an organic polymer). The sealant 24 of the present embodiment may be closed and continuous without interruption. According to one of the features of the present embodiment, the height of the frame glue 24 is greater than the height of the integrated circuit 23.
As shown in the cross-sectional view of fig. 4A and the top view of fig. 4B, the inner space defined by the frame glue 24 may be filled with a second glue material (such as epoxy or silicone-based) to form a flat layer 25 (having a flat upper surface) covering the micro light emitting diode 22 and the integrated circuit 23. The height of the planarization layer 25 is greater than the height of the integrated circuit 23 but less than the height of the frame glue 24. In the present embodiment, the second adhesive material of the planarization layer 25 may be different from the first adhesive material of the frame adhesive 24. The viscosity (viscosity) of the planarization layer 25 (or the filled second adhesive) is smaller than that of the frame adhesive 24 (or the filled first adhesive). According to another feature of this embodiment, the (liquid to solid) condensability (degree of condensation) of the planar layer 25 (or filled second paste) is sufficiently small to prevent the paste from shrinking in during the drying process, resulting in deformation or cracking of the substrate 21 (e.g., glass substrate).
It should be noted that if the planarization layer 25 is thick enough to be self-limited to the predetermined space (not flowing outwards) to cover the micro light emitting diode 22 and the integrated circuit 23, the frame glue 24 may be omitted.
According to a further feature of the present embodiment, the planarization layer 25 is doped with a dark or black dye to form a dark or black color as a light blocking layer to prevent light from irradiating the integrated circuit 23. The planarization layer 25 may also function as a waterproof (water proof) layer to protect the integrated circuit 23 from moisture. In this embodiment, the planarization layer 25 (or the filled second adhesive) may include a molding compound material (e.g., silicone).
According to a further feature of the present embodiment, the planarization layer 25 (or the filled second adhesive) may serve as a corrosion-resistant layer to prevent the reflective layer 222 from being corroded by moisture and/or oxidation. In this embodiment, the planarization layer 25 may comprise a room-temperature-curing (RTV) material, such as room-temperature-curing silicone (RTV).
According to the above embodiment, the method of forming the micro light emitting diode display 200 is simplified compared to the conventional method shown in fig. 1. In this embodiment, a single layer (i.e., the planarization layer 25) is formed using a single manufacturing process step to cover the micro light emitting diode 22 and the integrated circuit 23. In contrast, fig. 1, which uses two fabrication process steps to form two layers (i.e., the first protective layer 14 and the second protective layer 15). In addition, as shown in fig. 4A, the micro light emitting diode display 200 formed in the present embodiment has a flat upper surface, however, the upper surface of fig. 1 has a sharp contrast profile, and thus uneven pressure is caused. Thus, the substrate 21 (e.g., glass substrate) of the present embodiment is not easily broken or/and the integrated circuit 23 is not damaged by pressure.
The present invention is not limited to the above-mentioned embodiments, but is not limited to the above-mentioned embodiments, and any simple modification, equivalent changes and modification made to the above-mentioned embodiments according to the technical matters of the present invention can be made by those skilled in the art without departing from the scope of the present invention.
Claims (16)
1. A method of forming a micro light emitting diode display, comprising:
providing a substrate, wherein a plurality of micro light emitting diodes and at least one integrated circuit are arranged on the substrate; a kind of electronic device with high-pressure air-conditioning system
Forming a flat layer to cover the micro light emitting diode and the at least one integrated circuit;
before forming the flat layer, forming a frame glue around the substrate to enclose the micro light emitting diode and the at least one integrated circuit on the substrate, wherein the height of the frame glue is greater than that of the flat layer and the integrated circuit;
wherein the flat layer is used as a shading layer and an anti-corrosion layer;
the flat layer comprises epoxy resin or silicone-based glue material;
the planar layer has a planar upper surface.
2. The method of forming a micro light emitting diode display of claim 1, wherein: wherein the substrate comprises glass.
3. The method of forming a micro light emitting diode display of claim 1, wherein: wherein the planarization layer comprises a dark or black dye.
4. The method of forming a micro light emitting diode display of claim 1, wherein: wherein the planarization layer comprises a room temperature vulcanizing material.
5. The method of forming a micro light emitting diode display of claim 1, wherein: wherein the flat layer comprises a molding material.
6. The method of forming a micro light emitting diode display of claim 1, wherein: wherein the viscosity of the flat layer is smaller than that of the frame glue.
7. The method of forming a micro light emitting diode display of claim 1, further comprising:
forming a light guide layer to cover the micro light emitting diode before forming the flat layer; a kind of electronic device with high-pressure air-conditioning system
Forming a reflecting layer on the light guiding layer.
8. The method of forming a micro light emitting diode display of claim 1, wherein: wherein the condensation of the flat layer is sufficiently small that the substrate does not deform or crack during the drying of the flat layer.
9. A micro light emitting diode display, comprising:
a substrate;
a plurality of micro light emitting diodes and at least one integrated circuit arranged on the substrate;
a planarization layer covering the micro light emitting diode and the at least one integrated circuit; a kind of electronic device with high-pressure air-conditioning system
The frame glue is arranged around the substrate to enclose the micro light emitting diode, the at least one integrated circuit and the flat layer, and the height of the frame glue is larger than that of the flat layer and the integrated circuit;
wherein the flat layer is used as a shading layer and an anti-corrosion layer;
the flat layer comprises epoxy resin or silicone-based glue material;
the planar layer has a planar upper surface.
10. The micro light emitting diode display of claim 9, wherein: wherein the substrate comprises glass.
11. The micro light emitting diode display of claim 9, wherein: wherein the planarization layer comprises a dark or black dye.
12. The micro light emitting diode display of claim 9, wherein: wherein the planarization layer comprises a room temperature vulcanizing material.
13. The micro light emitting diode display of claim 9, wherein: wherein the flat layer comprises a molding material.
14. The micro light emitting diode display of claim 9, wherein: wherein the viscosity of the flat layer is smaller than that of the frame glue.
15. The micro light emitting diode display of claim 9, further comprising:
the light guide layer is formed on the micro light emitting diode and is positioned below the flat layer; a kind of electronic device with high-pressure air-conditioning system
The reflecting layer is formed between the light guide layer and the flat layer.
16. The micro light emitting diode display of claim 9, wherein: wherein the condensation of the flat layer is sufficiently small that the substrate does not deform or crack during the drying of the flat layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910122428.6A CN111584533B (en) | 2019-02-19 | 2019-02-19 | Micro light emitting diode display and forming method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910122428.6A CN111584533B (en) | 2019-02-19 | 2019-02-19 | Micro light emitting diode display and forming method thereof |
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| CN111584533A CN111584533A (en) | 2020-08-25 |
| CN111584533B true CN111584533B (en) | 2023-06-13 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1600468A (en) * | 1977-09-06 | 1981-10-14 | Sauder Industries | Insulation module |
| WO2008074102A1 (en) * | 2006-12-20 | 2008-06-26 | National Institute Of Ocean Technology - Niot Campus | Composition coating for biofouling protection |
| CN104756178A (en) * | 2012-11-05 | 2015-07-01 | 索尼公司 | Optical device, method for manufacturing same, and electronic device |
| CN107871454A (en) * | 2016-09-26 | 2018-04-03 | 启端光电股份有限公司 | micro light emitting diode display panel |
| TW201814880A (en) * | 2016-09-26 | 2018-04-16 | 啟端光電股份有限公司 | Top emission microLED display and bottom emission microLED display and a method of forming the same |
| TW201838173A (en) * | 2017-04-12 | 2018-10-16 | 啟端光電股份有限公司 | Top emission microled display and bottom emission microled display and a method of forming the same |
| CN109285935A (en) * | 2018-11-07 | 2019-01-29 | 东莞市亿晶源光电科技有限公司 | A kind of surface luminescent LED lamp pearl and lamp string |
-
2019
- 2019-02-19 CN CN201910122428.6A patent/CN111584533B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1600468A (en) * | 1977-09-06 | 1981-10-14 | Sauder Industries | Insulation module |
| WO2008074102A1 (en) * | 2006-12-20 | 2008-06-26 | National Institute Of Ocean Technology - Niot Campus | Composition coating for biofouling protection |
| CN104756178A (en) * | 2012-11-05 | 2015-07-01 | 索尼公司 | Optical device, method for manufacturing same, and electronic device |
| CN107871454A (en) * | 2016-09-26 | 2018-04-03 | 启端光电股份有限公司 | micro light emitting diode display panel |
| TW201814880A (en) * | 2016-09-26 | 2018-04-16 | 啟端光電股份有限公司 | Top emission microLED display and bottom emission microLED display and a method of forming the same |
| TW201838173A (en) * | 2017-04-12 | 2018-10-16 | 啟端光電股份有限公司 | Top emission microled display and bottom emission microled display and a method of forming the same |
| CN109285935A (en) * | 2018-11-07 | 2019-01-29 | 东莞市亿晶源光电科技有限公司 | A kind of surface luminescent LED lamp pearl and lamp string |
Non-Patent Citations (1)
| Title |
|---|
| （美）因特兰特等.先进材料化学.《先进材料化学》.2013, * |
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