TW201814880A - Top emission microLED display and bottom emission microLED display and a method of forming the same - Google Patents

Abstract

A microLED display includes a first main substrate, micrLEDs disposed above the first main substrate, a first light blocking layer disposed above the first main substrate to define emission areas, a light guiding layer disposed in the emission areas, and a plurality of connecting structures disposed in the emission areas respectively and electrically connected with the microLEDs.

Description

Top emission type micro light emitting diode display and bottom emission type micro light emitting diode display and forming method thereof

The present invention relates to a light emitting diode display, and more particularly to a top emission micro light emitting diode display and a bottom emission micro light emitting diode display.

The micro-light emitting diode (microLED, mLED or μLED) display panel is a type of flat panel display composed of individual microscopic light-emitting diodes of a size scale of 1 to 10 micrometers. Compared with the conventional liquid crystal display panel, the micro-light-emitting diode display panel has a large contrast ratio and a fast response time, and consumes less power. Although the micro-light-emitting diode and the organic light-emitting diode (OLED) also have low power consumption characteristics, the micro-light-emitting diode uses three-five-group diode technology (for example, gallium nitride), so The organic light-emitting diode has higher brightness, higher luminous efficacy and longer lifetime.

The active driving method using a thin film transistor (TFT) is a commonly used driving mechanism that can be combined with a micro light emitting diode to manufacture a display panel. However, the thin film transistor uses a complementary metal oxide semiconductor (CMOS) process, and the micro light emitting diode uses a flip chip technique, which causes thermal mismatch problems and a thin film. The process of the transistor is complicated. In the low gray scale display, since the driving current is small, the leakage current of the micro light emitting diode is affected to affect the gray scale display.

Passive drive is another drive mechanism. A conventional passive drive display panel has a column drive circuit and a row drive circuit disposed at an edge of the display panel. However, when the size of the display panel becomes large or the resolution becomes high, the output load of the driver is excessively large, and an excessively long delay time causes the display panel to be unable to drive normally. Therefore, the passive driving mechanism cannot be applied to a large-sized micro-light emitting diode display panel.

Therefore, there is a need to propose a novel micro-light-emitting diode display panel, particularly a large-sized or high-resolution display panel, which retains the advantages of the micro-light-emitting diode and can improve the disadvantages of the conventional driving mechanism.

Since the distance between adjacent micro-light-emitting diodes is extremely small, mutual interference between adjacent micro-light-emitting diodes or adjacent pixels, such as color mixing, and contrast ratio is easily caused. In addition, the micro-light-emitting diode needs to be electrically connected to other components or circuits by connecting wires, which usually include an opaque material or a reflective material, thereby causing non-uniform Show the problem.

Therefore, there is a need to propose a novel micro-light-emitting diode display for improving the luminous efficacy of a conventional micro-light-emitting diode display.

In view of the above, one of the objects of the embodiments of the present invention is to provide a micro-light emitting diode display panel, which effectively reduces the load of the driver to realize a single large-size high-resolution micro-light-emitting diode display panel. In one embodiment, the passive driving method is adopted, which can simplify the manufacturing process of the display panel, shorten the opening time of the micro light emitting diode, improve the driving current, and effectively reduce the influence of the leakage current on the gray scale display of the micro light emitting diode.

According to an embodiment of the invention, the micro-light-emitting diode display panel comprises a plurality of micro-light emitting diodes, a substrate and a plurality of drivers. The substrate is used to carry the micro-light emitting diodes, and the surface of the substrate is divided into a plurality of sub-regions. The drivers are respectively disposed on the surfaces of the sub-regions. In an embodiment, the micro-light emitting diodes use a passive driving method. The driver comprises a row driving circuit, and the row driving wire is connected to and transmits the row driving signal to the first electrode of the same row of the micro light emitting diode; and the column driving circuit is connected by the column wires and transmits the column driving signal to the same column of the micro light emitting diode The second electrode of the polar body.

According to another embodiment of the present invention, a micro light emitting diode display panel includes a plurality of micro light emitting diodes, at least one integrated circuit, and a substrate. The substrate carries the micro-light emitting diodes and the integrated circuit, and the top surface of the substrate has a recessed portion for accommodating the integrated circuit.

In view of the above, one of the objects of the embodiments of the present invention is to provide a structure and a manufacturing method of a top-emitting micro-light-emitting diode display and a bottom-emitting micro-light-emitting diode display, thereby effectively avoiding interference, color mixing or uneven display problems. .

According to one embodiment of the present invention, a top emission type micro light emitting diode display includes a first main substrate; a bottom common electrode layer is disposed on a top surface of the first main substrate; and a plurality of micro light emitting diodes are disposed on the bottom common electrode Above the layer; a first light blocking layer disposed above the bottom common electrode layer to define a plurality of light emitting regions; a light guiding layer disposed in the light emitting regions; and a plurality of connecting structures disposed in the light emitting regions And electrically connected to the micro-light emitting diodes respectively.

According to still another embodiment of the present invention, a bottom emission type micro light emitting diode display includes a first main substrate; a plurality of micro light emitting diodes are disposed on the first main substrate; and the first light blocking layer is disposed at the first a plurality of light-emitting regions are defined above the main substrate; a light-guiding layer is disposed in the light-emitting regions; and a plurality of connection structures are disposed in the light-emitting regions and electrically connected to the micro-light emitting diodes respectively; The electrode layer is disposed on the top surface of the first light blocking layer and the micro light emitting diodes.

1A shows a top view of a micro LED display panel 9100 according to an embodiment of the present invention, and FIG. 1B shows a side view of the micro LED display panel 9100 of FIG. The architecture of the micro-light-emitting diode display panel 9100 of the present embodiment is preferably applied to a large-sized high-resolution display panel, such as a display panel having a resolution of 3840 RGB x 2160. In the present specification, the micro-light emitting diode has a size rating of 1 to 10 μm. However, it will be smaller due to the application field of the product or the development of future technologies. In the present specification, the "large size" display panel is defined as a display panel of 10 inches or more according to the current industry practice. However, the definition of a "large size" display panel may vary depending on the application area of the product or the future development of the technology. In the present specification, the "high-resolution" display panel is defined as a display panel of 1080 or more scanning lines according to the current industry practice. However, the definition of a "high-resolution" display panel will also change depending on the application area of the product or the future development of the technology.

In this embodiment, the micro-light-emitting diode display panel 9100 includes a substrate 911 for carrying a plurality of micro-light-emitting diodes (not shown). The material of the substrate 911 is preferably an insulator (for example, glass or acryl), and may be other materials suitable for carrying the micro-light emitting diode.

According to one of the features of the embodiment, the surface of the substrate 911 is divided into a plurality of sub-regions 9101. The divided sub-regions 9101 are not physically cut, and the substrate 911 is not formed by integrating a plurality of cell blocks, so the substrate 911 is a complete uncut entity. In other words, the micro-light-emitting diode display panel 9100 of the present embodiment is a single (single or whole) or uncut display panel. The first A diagram shows only a simplified sub-area 9101 partitioning example. Taking the micro-light-emitting diode display panel 9100 with a resolution of 3840 RGB x 2160 as an example, the substrate 911 can be divided into 80×54 sub-regions 9101, and the resolution of each region 9101 is 48 RGB×40, but can also be divided into more or less sub-regions. 9101.

According to another feature of the embodiment, the micro-light-emitting diode display panel 9100 includes a plurality of drivers 912 respectively disposed on surfaces (eg, top surfaces) of the sub-regions 9101. The driver 912 shown in FIG. 1A is disposed at a central position of the surface of the corresponding sub-region 9101, but is not limited thereto. The first A diagram illustrates that each of the sub-regions 9101 is provided with a driver 912. However, in other embodiments, each of the sub-regions 9101 may be provided with a plurality of drivers 912. The driver 912 of the present embodiment can be fabricated as an integrated circuit in the form of a wafer, and the driver 912 is bonded by surface mount technology (SMT), such as chip-on-glass (COG) or flip chip technology. Bonded to the surface of sub-region 9101. In one example, the driver 912 and the micro-light emitting diode system are disposed on the same surface of the sub-region 9101 of the substrate 911.

The micro-light-emitting diode display panel 9100 of the present embodiment further includes a complex timing controller (TCON) 913, which can be electrically connected to the substrate 911 by wires (for example, a flexible circuit board, not shown in the drawings), and then A trace (not shown) on the surface of the substrate 911 is electrically connected to the corresponding driver 912. In this embodiment, a timing controller 913 can electrically connect at least two drivers 912. In other words, the number of timing controllers 913 is less than the number of drivers 912. The timing controller 913 can be directly connected to the corresponding driver 912 by a trace; or can be connected to a driver 912 by a trace, buffered by a signal, and then connected to another driver 912 by a trace.

According to still another feature of the embodiment, the micro-light-emitting diode display panel 9100 adopts a passive driving manner to drive the micro-light emitting diode. The second figure shows a schematic diagram of a passively driven micro-light emitting diode display panel 9100. The timing controller 913 transmits the timing control signal and the display data signal to the driver 912. The driver 912 includes a column driving circuit 9121 and a row or scan driving circuit 9122. The row driving circuit 9121 is connected by the row wiring 9111 and transmits the row driving signal to the first electrode of the same row of the micro light emitting diode 914. (e.g., the anode), the column driver circuit 9122 is coupled by the column conductors 91221 and transmits the column drive signals to the second electrode (e.g., the cathode) of the same column of micro-light emitting diodes 914. In the present embodiment, the row driving circuit 9121 and the column driving circuit 9122 are fabricated as a single integrated circuit.

According to the above embodiment, since the substrate 911 of the micro-light-emitting diode display panel 9100 is divided into a plurality of sub-areas 9101, each of the regions 9101 is provided with a corresponding driver 912, so that the load of the row driving circuit 9121 and the column driving circuit 9122 can be effectively reduced. To achieve a single large-size high-resolution micro-light-emitting diode display panel. In addition, the micro-light-emitting diode display panel 9100 of the present embodiment can drive the micro-light-emitting diode 914 by using a passive driving method, so that the process of the display panel can be simplified, as compared with the active driving method using a thin film transistor (TFT). The turn-on time of the micro-light-emitting diode 914 is shortened, the driving current is increased, and the influence of the leakage current on the gray-scale display of the micro-light-emitting diode 914 is effectively reduced.

The third figure shows a cross-sectional view of a frontside illuminating micro-light emitting diode display panel 9300 in accordance with a first particular embodiment of the present invention. In the embodiment, the micro-light emitting diode 914 and the driver 912 are disposed on the top surface of the substrate 911. The light generated by the micro-light-emitting diode 914 mainly emits light from the top surface of the substrate 911 (i.e., the front side emits light) as indicated by an arrow.

As illustrated in the third figure, each pixel includes a red micro-light emitting diode 914R, a green micro-light emitting diode 914G, and a blue micro-light emitting diode 914B. A wiring layer 915 is disposed between the surface of the substrate 911 (eg, the top surface) and the micro-light-emitting diode 914 and the driver 912 for electrically connecting the driver 912, the micro-light-emitting diode 914, and the timing controller 913. Between the micro-light emitting diodes 914 of adjacent pixels, a light blocking layer 916 is formed above the wiring layer 915. The material of the light blocking layer 916 of this embodiment may be a black matrix (BM) or other suitable material that can shield light. In an embodiment, the light blocking layer 916 may also be formed between the red micro-light emitting diode 914R, the green micro light emitting diode 914G, and the blue micro light emitting diode 914B of the same pixel, but it is not necessarily formed.

A light guiding layer 917 may be further disposed on the red micro light emitting diode 914R, the green micro light emitting diode 914G, and the blue micro light emitting diode 914B. The front-illuminated micro-light-emitting diode display panel 9300 of the present embodiment further includes a cover plate 918 disposed on the bottom surface of the substrate 911. The material of the cover plate 918 of this embodiment may be an opaque material.

The fourth figure shows a cross-sectional view of a backside illuminating micro-light emitting diode display panel 9400 of a second specific embodiment of the present invention. In the embodiment, the micro-light emitting diode 914 and the driver 912 are disposed on the top surface of the substrate 911. The light generated by the micro-light-emitting diode 914 mainly emits light downward from the back surface of the substrate 11 (i.e., the back surface emits light) as indicated by an arrow.

As illustrated in the fourth figure, each pixel includes a red micro light emitting diode 914R, a green micro light emitting diode 914G, and a blue micro light emitting diode 914B. Between the micro-light emitting diodes 914 of adjacent pixels, a light blocking layer 916 is formed on the surface (for example, the top surface) of the substrate 911. The material of the light blocking layer 916 of this embodiment may be a black matrix (BM) or other suitable material that can shield light. A wiring layer 915 is disposed above the light blocking layer 916 for electrically connecting the driver 912, the micro LED 914, and the timing controller 913. In an embodiment, the light blocking layer 916 may also be formed between the red micro-light emitting diode 914R, the green micro light emitting diode 914G, and the blue micro light emitting diode 914B of the same pixel, but it is not necessarily formed.

A light guiding layer 917 may be further disposed on the red micro light emitting diode 914R, the green micro light emitting diode 914G, and the blue micro light emitting diode 914B. The back-illuminated micro-light-emitting diode display panel 9400 of the present embodiment further includes a cover plate 918 disposed above the driver 912, the wiring layer 915, the light blocking layer 916, and the light guiding layer 917. The material of the cover plate 918 of this embodiment may be an opaque material.

The fifth figure shows a partially enlarged side view of the substrate 911, the driver 912 and the micro-light emitting diode 914, wherein the driver 912 and the micro-light emitting diode 914 are disposed on the top surface of the substrate 911. In general, the height of the integrated circuit (e.g., driver 912) is much higher than the height of the micro-light emitting diode 914. For example, the height of the driver 912 is 150 micrometers, the height of the micro-light emitting diode 914 is 10 micrometers, and the height of the substrate 911 is 500-1100 micrometers. Since the height of the driver 912 and the micro-light-emitting diode 914 are greatly different (for example, ten times or more), the light emitted from the top surface of the substrate 911 by the micro-light-emitting diode 914 (shown by an arrow) is adjacent. The driver 912 blocks, thereby reducing the light intensity at certain viewing angles. In order to solve this problem, the present invention therefore proposes the following embodiments.

Figure 6A is a partially enlarged side elevational view showing the micro-light emitting diode display panel of the embodiment of the present invention. In the present embodiment, the top surface of the substrate 911 has a recess 9110 for accommodating an integrated circuit (for example, the driver 912). In the present embodiment, the sum of the depth h1 of the recessed portion 9110 and the height of the micro-light emitting diode 914 is equal to the height of the driver 912. Therefore, the top surface of the driver 912 is at the same level as the top surface of the micro-light emitting diode 914. Compared with the micro-light-emitting diode display panel of the fifth embodiment, the light emitted by the micro-light-emitting diode 914 of the present embodiment is not blocked by the adjacent driver 912.

Fig. 6B is a partially enlarged side elevational view showing the micro-light emitting diode display panel of another embodiment of the present invention. In the present embodiment, the top surface of the substrate 911 has a recessed portion 9110 for accommodating an integrated circuit (for example, the driver 912). In the present embodiment, the depth h2 of the recessed portion 9110 is greater than the height of the driver 912. Therefore, the level of the top surface of the driver 912 is lower than the top surface of the micro-light emitting diode 914. Compared with the micro-light-emitting diode display panel of the fifth embodiment, the light emitted by the micro-light-emitting diode 914 of the present embodiment is not blocked by the adjacent driver 912.

Figure 6C is a partially enlarged side elevational view showing a micro-light emitting diode display panel according to still another embodiment of the present invention. In the present embodiment, the top surface of the substrate 911 has a recessed portion 9110 for accommodating an integrated circuit (for example, the driver 912). In the present embodiment, the sum of the depth h3 of the recessed portion 9110 and the height of the micro-light emitting diode 914 is smaller than the height of the driver 912. Therefore, the level of the top surface of the driver 912 is higher than the top surface of the micro-light emitting diode 914. Compared with the micro-light-emitting diode display panel of the fifth embodiment, the light emitted by the micro-light-emitting diode 914 of the present embodiment is greatly improved by the degree of blocking by the adjacent driver 912.

According to the above embodiment, the designer can respectively form the recesses 9110 of different depths according to the heights of the integrated circuits for respectively accommodating the integrated circuits of different heights. The designer can also form a groove having a recess according to the maximum height of the complex integrated circuit to accommodate the integrated circuits at the same time.

The seventh diagram shows a simplified side view of a top emission micro-light emitting diode display 100. In this embodiment, a plurality of micro-light emitting diodes 12 are disposed on the top surface of the main substrate 11 using a bonding technique, such as a red micro-light emitting diode 12R, a green micro-light emitting diode 12G, and a blue micro. Light-emitting diode 12B. The light generated by the micro-light-emitting diodes 12 is emitted from the top surface of the main substrate 11 (as indicated by an arrow), and is therefore referred to as a top-emission type micro-light-emitting diode display. In the present specification, the micro-light emitting diode has a size rating of 1 to 10 μm. However, it may be smaller or larger due to the application field of the product or the development of future technologies.

8A is a plan view showing a top-emission type micro-light-emitting diode display 200 according to a first embodiment of the present invention, and FIG. 8B is a cross-sectional view showing an eighth-A diagram. In this embodiment, a plurality of micro-light-emitting diodes 22, such as a red micro-light-emitting diode 22R, a green micro-light-emitting diode 22G, and a blue micro-light-emitting diode, are disposed on the top surface of the (first) main substrate 21A. Body 22B. A (first) light blocking layer 23A is disposed between the adjacent micro light emitting diodes 22, and is formed on the top surface of the (first) main substrate 21A to avoid adjacent micro light emitting diodes. Interference between 22 (such as color mixing), and can improve contrast. A bottom common electrode layer 28 may be disposed between the main substrate 21A and the micro-light emitting diode 22. In the present embodiment (and subsequent embodiments), the micro-light emitting diode 22 may be rectangular. For example, it is 25 microns long and 10 microns wide. According to one of the features of embodiments of the present invention, the micro-light emitting diodes 22 are arranged in a vertical column. That is, the long side of the micro-light emitting diode 22 is parallel to the longitudinal direction of the display, and the short side is parallel to the lateral direction of the display. Since the human eye feels that the light emitted vertically is more than the light emitted horizontally, the set direction can increase the angle of view angle.

The (first) light blocking layer 23A of the present embodiment may be a black matrix (BM). In the embodiment shown in the eighth embodiment, a black resin is first formed, and an optical process and a curing process are used to form a black matrix (first) light blocking layer 23A. In another embodiment, an ink-jet printing technique and a curing process are used to form a black matrix (first) light blocking layer 23A.

The (first) light blocking layer 23A defines an emission area 24, that is, an area not covered by the (first) light blocking layer 23A is referred to as a light emitting area 24. On the other hand, all areas except the light-emitting area 24 are covered with the (first) light blocking layer 23A. In the light-emitting region 24, a light guiding layer 25 is formed, which comprises a light guiding material for expanding the light generated by the micro-light emitting diode 22. The light guiding material is generally a transparent material and has a high refractive index. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24.

In the present embodiment, the thickness of the (first) light blocking layer 23A is larger than the thickness of the light guiding layer 25. In addition, the thickness of the light guiding layer 25 may be greater than the thickness of the micro light emitting diode 22, as shown in FIG. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro light emitting diode 22.

Fig. C is a cross-sectional view showing the top emission type micro light-emitting diode display 200 of the first modification of the present invention. The thickness of the (first) light blocking layer 23A of the embodiment shown in the eighth C is smaller than the thickness of the light guiding layer 25 as compared with the eighth FIG. Further, the regions of the (first) light blocking layer 23A adjacent to the light guiding layer 25 partially overlap each other, and the (first) light blocking layer 23A is partially covered by the light guiding layer 25. In the embodiment shown in the eighth C diagram, a chromium/chromia film is first formed, and a photo etching technique is used to form a black matrix (first) light blocking layer 23A.

The eighth D diagram shows another top view of the top emission type micro light emitting diode display 200 of the first embodiment of the present invention. Each of the light-emitting regions 24 includes a connection structure 26, such as a conductive electrode, disposed on a top surface of the micro-light-emitting diode 22. According to one of the features of the embodiments of the present invention, the pattern of the connection structure 26 of each of the light-emitting regions 24 is the same. The material of the connection structure 26 includes a transparent material (for example, indium tin oxide), a non-transparent material (for example, metal), or a reflective material. Since the light-emitting area 24 of this embodiment has the connection structure 26 of the same pattern, uneven display problems can be avoided.

9A is a plan view showing a top emission type micro light-emitting diode display 300 according to a second embodiment of the present invention, and a ninth B is a cross-sectional view showing a ninth A chart. The second embodiment is similar to the first embodiment except that the (first) light blocking layer 23A of the second embodiment is disposed between adjacent pixels (instead of the adjacent micro-light emitting diodes 22). Between) to avoid mutual interference between adjacent pixels (for example, color mixing), and to improve contrast.

The (first) light blocking layer 23A defines the light emitting region 24, that is, the region not covered by the (first) light blocking layer 23A is referred to as a light emitting region 24 (or a pixel region). On the other hand, all areas except the light-emitting area 24 are covered with the (first) light blocking layer 23A. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24.

In the present embodiment, the thickness of the (first) light blocking layer 23A is larger than the thickness of the light guiding layer 25. Further, the thickness of the light guiding layer 25 may be greater than the thickness of the micro light emitting diode 22 as shown in FIG. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro light emitting diode 22.

Fig. 9C is a cross-sectional view showing the top emission type micro light-emitting diode display 300 of the second modification of the present invention. The thickness of the (first) light blocking layer 23A of the embodiment shown in the ninth C is smaller than the thickness of the light guiding layer 25 compared to the ninth B. Further, the regions of the (first) light blocking layer 23A adjacent to the light guiding layer 25 partially overlap each other, and the (first) light blocking layer 23A is partially covered by the light guiding layer 25.

The ninth D diagram shows another top view of the top emission type micro light emitting diode display 300 of the second embodiment of the present invention. Each of the light-emitting regions 24 includes a connection structure 26, such as a conductive electrode. According to one of the features of the embodiments of the present invention, the respective connection structures 26 of each of the micro-light-emitting diodes 22 in the light-emitting region 24 have the same pattern, and each of the light-emitting regions 24 has the same pattern of connection structures 26. Since the patterns of the corresponding connection structures 26 of each of the micro-light-emitting diodes 22 in the light-emitting region 24 of the present embodiment are the same, and the patterns of the connection structures 26 of each of the light-emitting regions 24 are the same, uneven display problems can be avoided. .

FIG. 10A is a plan view showing a top emission type micro light-emitting diode display 400 according to a third embodiment of the present invention, and FIG. 10B is a cross-sectional view showing a tenth A chart. In this embodiment, a plurality of micro-light-emitting diodes 22, such as a red micro-light-emitting diode 22R, a green micro-light-emitting diode 22G, and a blue micro-light-emitting diode, are disposed on the top surface of the (first) main substrate 21A. Body 22B. Each of the micro-light-emitting diodes 22 has a light-emitting region 24 corresponding thereto. This embodiment includes a frame-shaped first light blocking layer 23A that surrounds the light emitting region 24 and is disposed on the top surface of the (first) main substrate 21A. This embodiment further includes a blocking substrate 27 located above the (first) main substrate 21A and the first light blocking layer 23A. The second light blocking layer 23B is formed on the bottom surface of the blocking substrate 27, which covers the light emitting region 24 and a region other than the first light blocking layer 23A. The regions adjacent to the first light blocking layer 23A and the second light blocking layer 23B partially overlap each other. Therefore, the opening inner diameter d1 of the first light blocking layer 23A is different (for example, smaller than) the opening inner diameter d2 of the second light blocking layer 23B. In another embodiment, the opening inner diameter of the first light blocking layer 23A may be larger than the opening inner diameter of the second light blocking layer 23B. The first light blocking layer 23A and the second light blocking layer 23B of the embodiment may be a black matrix (BM), and the blocking substrate 27 may be a light transmissive material such as quartz, glass or plastic material.

A light guiding layer 25 is formed in the light emitting region 24, and includes a light guiding material for expanding the light generated by the micro light emitting diode 22. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24.

In the present embodiment, the thickness of the first light blocking layer 23A is greater than the thickness of the light guiding layer 25. In addition, the thickness of the light guiding layer 25 may be greater than the thickness of the micro light emitting diode 22, as shown in FIG. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro light emitting diode 22.

Fig. C is a cross-sectional view showing the top emission type micro light-emitting diode display 400 of the third modification of the present invention. The thickness of the first light blocking layer 23A of the embodiment shown in the tenth C is smaller than the thickness of the light guiding layer 25 compared to the tenth B. Further, the first light blocking layer 23A is covered by the light guiding layer 25.

According to one of the features of the embodiment, the pattern of the connection structure (not shown in the drawings) in each of the light-emitting regions 24 is the same. Since each of the light-emitting regions 24 of the present embodiment has the same pattern of connection structure, uneven display problems can be avoided.

11A is a plan view showing a top emission type micro light-emitting diode display 500 according to a fourth embodiment of the present invention, and FIG. 11B is a cross-sectional view showing FIG. 11A. The fourth embodiment is similar to the third embodiment, except that the first light blocking layer 23A and the second light blocking layer 23B of the fourth embodiment are disposed between adjacent pixels (not adjacent). The micro-light-emitting diodes 22 are used to avoid mutual interference (for example, color mixing) between adjacent pixels, and the contrast can be improved.

In the present embodiment, each of the pixels (which includes the red micro-light-emitting diode 22R, the green micro-light-emitting diode 22G, and the blue micro-light-emitting diode 22B) has a light-emitting region 24 corresponding thereto. This embodiment includes a frame-shaped first light blocking layer 23A that surrounds the light emitting region 24 and is disposed on the top surface of the (first) main substrate 21A. The embodiment further includes a second light blocking layer 23B formed on the bottom surface of the blocking substrate 27 for covering the light emitting region 24 and a region other than the first light blocking layer 23A. A region of the first light blocking layer 23A adjacent to the second light blocking layer 23B partially overlaps each other. Therefore, the opening inner diameter d1 of the first light blocking layer 23A is different (for example, smaller than) the opening inner diameter d2 of the second light blocking layer 23B. The first light blocking layer 23A and the second light blocking layer 23B of the embodiment may be a black matrix (BM), and the blocking substrate 27 may be a light transmissive material such as quartz, glass or plastic material.

A light guiding layer 25 is formed in the light emitting region 24, and includes a light guiding material for expanding the light generated by the micro light emitting diode 22. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24.

In the present embodiment, the thickness of the first light blocking layer 23A is greater than the thickness of the light guiding layer 25. Further, the thickness of the light guiding layer 25 may be greater than the thickness of the micro light emitting diode 22 as shown in FIG. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro light emitting diode 22.

Fig. 11C is a cross-sectional view showing a top emission type micro light-emitting diode display 500 according to a fourth modification of the present invention. The thickness of the first light blocking layer 23A of the embodiment shown in the eleventh C is smaller than the thickness of the light guiding layer 25 as compared with the eleventh B. Further, the first light blocking layer 23A is partially covered by the light guiding layer 25.

According to one of the features of the present embodiment, the patterns of the respective connection structures (not shown in the drawings) of each of the micro-light-emitting diodes 22 in the light-emitting region 24 are the same, and each of the light-emitting regions 24 has the same pattern of connection structure. Since the patterns of the corresponding connection structures of the respective micro-light-emitting diodes 22 in the light-emitting region 24 of the present embodiment are the same, and the patterns of the connection structures of the respective light-emitting regions 24 are also the same, uneven display problems can be avoided.

Fig. 12 is a cross-sectional view showing a top emission type micro light-emitting diode display 600 according to a fifth embodiment of the present invention. In the present embodiment, the top-emitting micro-light-emitting diode display 600 includes a first main substrate 21A and a second main substrate 21B, which are located at the same horizontal plane but respectively correspond to the respective micro-light-emitting diode display panels. A first light blocking layer 23A is respectively disposed on the top surfaces of the first main substrate 21A and the second main substrate 21B. Similar to the structure of the fourth embodiment, the top-emitting micro-light-emitting diode display 600 includes a second light-blocking layer 23B formed on the bottom surface of the blocking substrate 27 for covering the light-emitting region 24 and the first light blocking layer. Areas other than 23A. As shown in the twelfth figure, the first main substrate 21A and the second main substrate 21B correspond to the same blocking substrate 27, and adjacent to the first main substrate 21A and the second main substrate 21B, the first main substrate The first light blocking layer 23A of 21A and the first light blocking layer 23A of the second main substrate 21B correspond to the same second light blocking layer 23B. Thereby, the plurality of micro-light-emitting diode display panels can be tiled to form a seamless top-emitting micro-light-emitting diode display 600.

13A to 19B are plan views and cross-sectional views showing respective steps of forming a top emission type micro-light-emitting diode display according to an embodiment of the present invention. As shown in Figs. 13A and 13B, the (first) main substrate 21A is first provided, which defines a light-emitting region 24. As shown in Figs. 14A and 14B, a bottom common electrode layer 28 is formed on the top surface of the (first) main substrate 21A. According to one of the features of embodiments of the present invention, the bottom common electrode layer 28 substantially covers the light-emitting region 24 to avoid uneven display problems.

As shown in FIG. 15A and FIG. 15B, a plurality of micro-light emitting diodes 22, such as a red micro-light emitting diode 22R, are disposed on the top surface of the bottom common electrode layer 28 using a bonding technique. The green micro-light-emitting diode 22G and the blue micro-light-emitting diode 22B. As shown in FIGS. 16A and 16B, a (first) light blocking layer 23A is formed in a region other than the light emitting region 24 to avoid mutual interference (for example, color mixing) between adjacent pixels, and Can improve contrast.

As shown in FIGS. 17A and 17B, a light guiding layer 25 is formed in the light-emitting region 24 for expanding the light generated by the micro-light emitting diode 22. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24. The thickness of the light guiding layer 25 may be greater than the thickness of the micro light emitting diode 22 as shown in FIG. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro light emitting diode 22. It is to be noted that the steps of forming the (first) light blocking layer 23A (the sixteenth A and sixteenth B) and the step of forming the light guiding layer 25 (the seventeenth A and the seventeenth Bth) ) can be interchanged.

As shown in FIG. 18A and FIG. 18B, a contact hole is formed on the top surface of the micro-light-emitting diode 22. Next, as shown in FIG. 19A and FIG. 19B, a plurality of connection structures 26 are formed, which are respectively connected to the micro-light-emitting diodes 22. The patterns of the connecting structures 26 are all the same, and each of the light-emitting regions 24 has the same pattern of connecting structures 26. Thereby, uneven display problems can be avoided.

The twenty-fifth diagram shows a simplified side view of a bottom emission micro-light emitting diode display 100. In this embodiment, a plurality of micro-light emitting diodes 12 are disposed on the top surface of the main substrate 11 using a bonding technique, such as a red micro-light emitting diode 12R, a green micro-light emitting diode 12G, and a blue micro. Light-emitting diode 12B. The light generated by the micro-light-emitting diodes 12 is emitted downward from the top surface of the main substrate 11 (as indicated by an arrow), and is therefore referred to as a bottom-emission type micro-light-emitting diode display. In the present specification, the micro-light emitting diode has a size rating of 1 to 10 μm. However, it may be smaller or larger due to the application field of the product or the development of future technologies.

21A shows a plan view of a bottom emission type micro light-emitting diode display 200 according to a sixth embodiment of the present invention, and FIG. 21B shows a cross-sectional view of FIG. In this embodiment, a plurality of micro-light-emitting diodes 22, such as a red micro-light-emitting diode 22R, a green micro-light-emitting diode 22G, and a blue micro-light-emitting diode, are disposed on the top surface of the (first) main substrate 21A. Body 22B. A (first) light blocking layer 23A is disposed between the adjacent micro light emitting diodes 22, and is formed on the top surface of the (first) main substrate 21A to avoid adjacent micro light emitting diodes. Interference between 22 (such as color mixing), and can improve contrast. A top common electrode layer 28 may be disposed over the light-emitting diode 22 and the light blocking layer 23A, and is separated from the light blocking layer 23A by an insulating layer 29.

The (first) light blocking layer 23A of the present embodiment may be a black matrix (BM). In the embodiment shown in FIG. 11B, a black resin is first formed, and an optical process and a curing process are used to form a black matrix (first) light blocking layer 23A. In another embodiment, an ink-jet printing technique and a curing process are used to form a black matrix (first) light blocking layer 23A.

The (first) light blocking layer 23A defines an emission area 24, that is, an area not covered by the (first) light blocking layer 23A is referred to as a light emitting area 24. On the other hand, all areas except the light-emitting area 24 are covered with the (first) light blocking layer 23A. In the light-emitting region 24, a light guiding layer 25 is formed, which comprises a light guiding material for expanding the light generated by the micro-light emitting diode 22. The light guiding material is generally a transparent material and has a high refractive index. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24.

In the present embodiment, the thickness of the (first) light blocking layer 23A is larger than the thickness of the light guiding layer 25. In addition, the thickness of the light guiding layer 25 may be greater than the thickness of the micro light emitting diode 22, as shown in FIG. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro light emitting diode 22.

Fig. 21C is a cross-sectional view showing the bottom emission type micro light-emitting diode display 200 of the sixth modification of the present invention. The thickness of the (first) light blocking layer 23A of the embodiment shown in the twenty-first C diagram is smaller than the thickness of the light guiding layer 25 as compared with the twenty-first B diagram. Further, the regions of the (first) light blocking layer 23A adjacent to the light guiding layer 25 partially overlap each other, and the (first) light blocking layer 23A is partially covered by the light guiding layer 25. In the embodiment shown in Fig. 21C, a chromium/chromia film is first formed, and a photo etching technique is used to form a black matrix (first) light blocking layer 23A.

The twenty-first D diagram shows another top view of the bottom emission type micro light-emitting diode display 200 of the sixth embodiment of the present invention. Each of the light-emitting regions 24 includes a connection structure 26 disposed between the micro-light-emitting diodes 22 and the main substrate 21A. According to one of the features of the embodiments of the present invention, the pattern of the connection structure 26 of each of the light-emitting regions 24 is the same. The material of the connecting structure 26 can be a transparent material (such as indium tin oxide), a non-transparent material (such as metal) or a reflective material. Since the light-emitting area 24 of this embodiment has the connection structure 26 of the same pattern, uneven display problems can be avoided.

FIG. 22A is a plan view showing a bottom emission type micro light-emitting diode display 300 according to a seventh embodiment of the present invention, and FIG. 22B is a cross-sectional view showing a twenty-second A picture. The seventh embodiment is similar to the sixth embodiment, except that the (first) light blocking layer 23A of the seventh embodiment is disposed between adjacent pixels (instead of the adjacent micro-light emitting diodes 22). Between) to avoid mutual interference between adjacent pixels (for example, color mixing), and to improve contrast.

The (first) light blocking layer 23A defines the light emitting region 24, that is, the region not covered by the (first) light blocking layer 23A is referred to as a light emitting region 24 (or a pixel region). On the other hand, all areas except the light-emitting area 24 are covered with the (first) light blocking layer 23A. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24.

In the present embodiment, the thickness of the (first) light blocking layer 23A is larger than the thickness of the light guiding layer 25. In addition, the thickness of the light guiding layer 25 may be greater than the thickness of the micro light emitting diode 22, as shown in FIG. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro light emitting diode 22.

Fig. 22C is a cross-sectional view showing the bottom emission type micro light-emitting diode display 300 of the seventh modification of the present invention. The thickness of the (first) light blocking layer 23A of the embodiment shown in the twenty-second C-picture is smaller than the thickness of the light guiding layer 25 as compared with the twenty-second B-picture. Further, the regions of the (first) light blocking layer 23A adjacent to the light guiding layer 25 partially overlap each other, and the (first) light blocking layer 23A is partially covered by the light guiding layer 25.

The twenty-second D diagram shows another top view of the bottom emission type micro light-emitting diode display 300 of the seventh embodiment of the present invention. A connection structure 26 is included in each of the light-emitting areas 24. According to one of the features of the embodiments of the present invention, the respective connection structures 26 of each of the micro-light-emitting diodes 22 in the light-emitting region 24 have the same pattern, and each of the light-emitting regions 24 has the same pattern of connection structures 26. Since the patterns of the corresponding connection structures 26 of each of the micro-light-emitting diodes 22 in the light-emitting region 24 of the present embodiment are the same, and the patterns of the connection structures 26 of each of the light-emitting regions 24 are the same, uneven display problems can be avoided. .

Fig. 23A shows a plan view of the bottom emission type micro light-emitting diode display 400 of the eighth embodiment of the present invention, and Fig. 23B shows a cross-sectional view of the twenty-third embodiment. In this embodiment, a plurality of micro-light-emitting diodes 22, such as a red micro-light-emitting diode 22R, a green micro-light-emitting diode 22G, and a blue micro-light-emitting diode, are disposed on the top surface of the (first) main substrate 21A. Body 22B. Each of the micro-light-emitting diodes 22 has a light-emitting region 24 corresponding thereto. This embodiment includes a frame-shaped first light blocking layer 23A that surrounds the light emitting region 24 and is disposed on the top surface of the (first) main substrate 21A. This embodiment further includes a blocking substrate 27 located below the (first) main substrate 21A. The second light blocking layer 23B is formed on the top surface of the blocking substrate 27, which covers the light emitting region 24 and a region other than the first light blocking layer 23A. The regions adjacent to the first light blocking layer 23A and the second light blocking layer 23B partially overlap each other. Therefore, the opening inner diameter d1 of the first light blocking layer 23A is different (for example, smaller than) the opening inner diameter d2 of the second light blocking layer 23B. In another embodiment, the opening inner diameter of the first light blocking layer 23A may be larger than the opening inner diameter of the second light blocking layer 23B. The first light blocking layer 23A and the second light blocking layer 23B of the embodiment may be a black matrix (BM), and the blocking substrate 27 may be a light transmissive material such as quartz, glass or plastic material.

A light guiding layer 25 is formed in the light emitting region 24, and includes a light guiding material for expanding the light generated by the micro light emitting diode 22. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24.

In the present embodiment, the thickness of the first light blocking layer 23A is greater than the thickness of the light guiding layer 25. Further, the thickness of the light guiding layer 25 may be greater than the thickness of the micro light emitting diode 22 as shown in FIG. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro light emitting diode 22.

Fig. 23C is a cross-sectional view showing the bottom emission type micro light-emitting diode display 400 of the eighth modification of the present invention. The thickness of the first light blocking layer 23A of the embodiment shown in the twenty-third embodiment is smaller than the thickness of the light guiding layer 25 as compared with the twenty-third figure B. Further, the first light blocking layer 23A is covered by the light guiding layer 25.

According to one of the features of the embodiment, the pattern of the connection structure (not shown in the drawings) in each of the light-emitting regions 24 is the same. Since each of the light-emitting regions 24 of the present embodiment has the same pattern of connection structure, uneven display problems can be avoided.

Fig. 24A is a plan view showing a bottom emission type micro light-emitting diode display 500 according to a ninth embodiment of the present invention, and Fig. 24B is a sectional view showing a twenty-fourth A picture. The ninth embodiment is similar to the eighth embodiment except that the first light blocking layer 23A and the second light blocking layer 23B of the ninth embodiment are disposed between adjacent pixels (not adjacent). The micro-light-emitting diodes 22 are used to avoid mutual interference (for example, color mixing) between adjacent pixels, and the contrast can be improved.

In the present embodiment, each of the pixels (which includes the red micro-light-emitting diode 22R, the green micro-light-emitting diode 22G, and the blue micro-light-emitting diode 22B) has a light-emitting region 24 corresponding thereto. This embodiment includes a frame-shaped first light blocking layer 23A that surrounds the light emitting region 24 and is disposed on the top surface of the (first) main substrate 21A. The embodiment further includes a second light blocking layer 23B formed on the top surface of the blocking substrate 27 for covering the light emitting region 24 and a region other than the first light blocking layer 23A. A region of the first light blocking layer 23A adjacent to the second light blocking layer 23B partially overlaps each other. Therefore, the opening inner diameter d1 of the first light blocking layer 23A is different (for example, smaller than) the opening inner diameter d2 of the second light blocking layer 23B. The first light blocking layer 23A and the second light blocking layer 23B of the embodiment may be a black matrix (BM), and the blocking substrate 27 may be a light transmissive material such as quartz, glass or plastic material.

A light guiding layer 25 is formed in the light emitting region 24, and includes a light guiding material for expanding the light generated by the micro light emitting diode 22. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24.

In the present embodiment, the thickness of the first light blocking layer 23A is greater than the thickness of the light guiding layer 25. Further, the thickness of the light guiding layer 25 may be greater than the thickness of the micro light emitting diode 22 as shown in FIG. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro light emitting diode 22.

Fig. 24C is a cross-sectional view showing the bottom emission type micro light-emitting diode display 500 of the ninth embodiment of the present invention. The thickness of the first light blocking layer 23A of the embodiment shown in the twenty-fourth C diagram is smaller than the thickness of the light guiding layer 25 as compared with the twenty-fourth B diagram. Further, the first light blocking layer 23A is partially covered by the light guiding layer 25.

According to one of the features of the present embodiment, the patterns of the respective connection structures (not shown in the drawings) of each of the micro-light-emitting diodes 22 in the light-emitting region 24 are the same, and each of the light-emitting regions 24 has the same pattern of connection structure. Since the patterns of the corresponding connection structures of the respective micro-light-emitting diodes 22 in the light-emitting region 24 of the present embodiment are the same, and the patterns of the connection structures of the respective light-emitting regions 24 are also the same, uneven display problems can be avoided.

Fig. 25 is a cross-sectional view showing a bottom emission type micro light-emitting diode display 600 of a tenth embodiment of the present invention. In the present embodiment, the bottom emission type micro-light-emitting diode display 600 includes a first main substrate 21A and a second main substrate 21B, which are located at the same horizontal plane but respectively correspond to the respective micro-light-emitting diode display panels. A first light blocking layer 23A is respectively disposed on the top surfaces of the first main substrate 21A and the second main substrate 21B. Similar to the structure of the ninth embodiment, the bottom emission type micro light emitting diode display 600 includes a second light blocking layer 23B formed on the top surface of the blocking substrate 27 for covering the light emitting region 24 and the first light blocking An area other than layer 23A. As shown in the twenty-fifth figure, the first main substrate 21A and the second main substrate 21B correspond to the same blocking substrate 27, and adjacent to the first main substrate 21A and the second main substrate 21B, the first main The first light blocking layer 23A of the substrate 21A and the first light blocking layer 23A of the second main substrate 21B correspond to the same second light blocking layer 23B. Thereby, the plurality of micro-light-emitting diode display panels can be tiling to form a seamless bottom-emitting micro-light-emitting diode display 600.

26A to 32B show top and cross-sectional views of respective process steps for forming a bottom emission type micro-light-emitting diode display according to an embodiment of the present invention. As shown in the twenty-sixth and twenty-sixth B, the (first) main substrate 21A is first provided, which defines a light-emitting region 24. As shown in the twenty-seventh A and twenty-seventh B, a plurality of connection structures 26 are formed. The patterns of the connecting structures 26 are all the same, and each of the light-emitting regions 24 has the same pattern of connecting structures 26. Thereby, uneven display problems can be avoided.

As shown in FIG. 28A and FIG. 28B, a plurality of micro-light-emitting diodes 22, such as a red micro-light-emitting diode 22R, are disposed on the top surface of the connection structure 26 using a bonding technique. The green micro-light-emitting diode 22G and the blue micro-light-emitting diode 22B. As shown in FIG. 29A and FIG. 29B, the (first) light blocking layer 23A is formed in a region other than the light emitting region 24 to avoid mutual interference between adjacent pixels (for example, color mixing). And the contrast can be enhanced, and the insulating layer 29 is formed on the light blocking layer 23A.

As shown in FIG. 30A and FIG. 30B, a light guiding layer 25 is formed in the light emitting region 24 for expanding the light generated by the micro light emitting diode 22. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24. The thickness of the light guiding layer 25 may be greater than the thickness of the micro light emitting diode 22 as shown in FIG. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro light emitting diode 22. It is noted that the steps of forming the (first) light blocking layer 23A (the twenty-ninth A picture and the twenty-ninth B picture) and the step of forming the light guiding layer 25 (thirtieth A and thirtieth) B) can be interchanged.

As shown in FIG. 31A and FIG. 31B, a contact hole is formed on the top surface of the micro-light-emitting diode 22. Next, as shown in FIG. 32A and FIG. 32B, a top common electrode layer 28 is formed over the insulating layer 29 and the light guiding layer 25. According to one of the features of the embodiments of the present invention, the top common electrode layer 28 completely covers the light-emitting area 24 to avoid uneven display problems.

The above description is only the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention; all other equivalent changes or modifications which are not departing from the spirit of the invention should be included in the following Within the scope of the patent application.

9100‧‧‧Micro LED display panel

9101‧‧‧ subregion

9300‧‧‧Front-emitting micro-light emitting diode display panel

9400‧‧‧Backlight-emitting micro-light emitting diode display panel

911‧‧‧Substrate

912‧‧‧ drive

9121‧‧‧ drive circuit

91211‧‧‧ wire

9122‧‧‧ column drive circuit

91221‧‧‧Wires

913‧‧‧Sequence Controller

914‧‧‧microluminescent diode

914R‧‧‧Red micro-light emitting diode

914G‧‧‧Green micro-light emitting diode

914B‧‧‧Blue micro-light emitting diode

915‧‧‧Line layer

916‧‧‧Light blocking layer

917‧‧‧Light guide layer

918‧‧‧ cover

9110‧‧‧Depression

H1‧‧‧depth

H2‧‧‧depth

H3‧‧‧depth

100‧‧‧Top-emitting micro-light emitting diode display

200‧‧‧Top-emitting micro-light emitting diode display

300‧‧‧Top-emitting micro-light emitting diode display

400‧‧‧Top-emitting micro-light emitting diode display

500‧‧‧Top-emitting micro-light emitting diode display

600‧‧‧Top-emitting micro-light emitting diode display

1400‧‧‧Bottom-emitting micro-light emitting diode display

1500‧‧‧Bottom-emitting micro-light emitting diode display

1600‧‧‧Bottom-emitting micro-light emitting diode display

1700‧‧‧Bottom-emitting micro-light emitting diode display

1800‧‧‧Bottom-emitting micro-light emitting diode display

1900‧‧‧Bottom-emitting micro-light emitting diode display

11‧‧‧Main substrate

12‧‧‧microluminescent diode

12R‧‧‧Red micro-light emitting diode

12G‧‧‧Green micro-light emitting diode

12B‧‧‧Blue micro-light emitting diode

21A‧‧‧First main substrate

21B‧‧‧Second main substrate

22‧‧‧microluminescent diode

22R‧‧‧Red micro-light emitting diode

22G‧‧‧Green micro-light emitting diode

22B‧‧‧Blue micro-light emitting diode

23A‧‧‧First light blocking layer

23B‧‧‧Second light blocking layer

24‧‧‧Lighting area

25‧‧‧Light guide layer

26‧‧‧ Connection structure

27‧‧‧Blocking the substrate

28‧‧‧(bottom/top) common electrode layer

29‧‧‧Insulation

D1‧‧‧opening inner diameter

D2‧‧‧opening inner diameter

FIG. 1A is a plan view showing a micro-light emitting diode display panel according to an embodiment of the present invention. The first B-picture shows a side view of the micro-light-emitting diode display panel of the first A-picture. The second figure shows a schematic diagram of a passively driven micro-light emitting diode display panel. The third figure shows a cross-sectional view of a front-illuminated micro-light-emitting diode display panel in accordance with a first specific embodiment of the present invention. The fourth figure shows a cross-sectional view of a back-illuminated micro-light emitting diode display panel in accordance with a second specific embodiment of the present invention. The fifth figure shows a partial enlarged side view of the substrate, the driver and the micro-light emitting diode. Figure 6A is a partially enlarged side elevational view showing the micro-light emitting diode display panel of the embodiment of the present invention. Fig. 6B is a partially enlarged side elevational view showing the micro-light emitting diode display panel of another embodiment of the present invention. Figure 6C is a partially enlarged side elevational view showing a micro-light emitting diode display panel according to still another embodiment of the present invention. The seventh figure shows a simplified side view of a top-emitting micro-light emitting diode display. Fig. 8A is a plan view showing a top emission type micro light-emitting diode display of the first embodiment of the present invention. Figure 8B shows a cross-sectional view of the eighth A diagram. Figure 8C is a cross-sectional view showing a top emission type micro light-emitting diode display of a variation first embodiment of the present invention. The eighth D diagram shows another top view of the top emission type micro light emitting diode display of the first embodiment of the present invention. Fig. 9A is a plan view showing a top emission type micro light-emitting diode display of a second embodiment of the present invention. Figure IXB shows a cross-sectional view of Figure IX. Figure IX is a cross-sectional view showing a top emission type micro light-emitting diode display of a second modification of the present invention. The ninth D diagram shows another top view of the top emission type micro light emitting diode display of the second embodiment of the present invention. Fig. 10A is a plan view showing a top emission type micro light-emitting diode display of a third embodiment of the present invention. Figure 10B shows a cross-sectional view of the tenth A. Fig. C is a cross-sectional view showing a top emission type micro light-emitting diode display of a third modification of the present invention. Fig. 11A is a plan view showing a top emission type micro light-emitting diode display of a fourth embodiment of the present invention. Figure 11B shows a cross-sectional view of Figure 11A. Fig. 11C is a cross-sectional view showing a top emission type micro light-emitting diode display of a variation fourth embodiment of the present invention. Fig. 12 is a cross-sectional view showing a top emission type micro light-emitting diode display according to a fifth embodiment of the present invention. 13A to 19B are plan views and cross-sectional views showing respective steps of forming a top emission type micro-light-emitting diode display according to an embodiment of the present invention. Figure 20 shows a simplified side view of a bottom-emitting micro-light emitting diode display. Fig. 21A is a plan view showing a bottom emission type micro light-emitting diode display of a sixth embodiment of the present invention. The twenty-first B diagram shows a cross-sectional view of the twenty-first A diagram. Fig. 21C is a cross-sectional view showing a bottom emission type micro light-emitting diode display of a sixth modification of the present invention. The twenty-first D diagram shows another top view of the bottom emission type micro light-emitting diode display of the sixth embodiment of the present invention. Fig. 22A is a plan view showing a bottom emission type micro light-emitting diode display of a seventh embodiment of the present invention. Figure 22B shows a cross-sectional view of the twenty-second A diagram. Fig. 22C is a cross-sectional view showing the bottom emission type micro light-emitting diode display of the seventh modification of the present invention. The twenty-second D diagram shows another top view of the bottom emission type micro light-emitting diode display of the seventh embodiment of the present invention. Fig. 23A is a plan view showing a bottom emission type micro light-emitting diode display of an eighth embodiment of the present invention. Figure 23B shows a cross-sectional view of Figure 23A. Fig. 23 is a cross-sectional view showing the bottom emission type micro light-emitting diode display of the eighth embodiment of the present invention. Fig. 24A is a plan view showing a bottom emission type micro light-emitting diode display of a ninth embodiment of the present invention. The twenty-fourth B diagram shows a cross-sectional view of the twenty-fourth A diagram. Fig. 24C is a cross-sectional view showing the bottom emission type micro light-emitting diode display of the ninth embodiment of the present invention. Fig. 25 is a cross-sectional view showing a bottom emission type micro light-emitting diode display of a tenth embodiment of the present invention. 26A to 32B show top and cross-sectional views of respective process steps for forming a bottom emission type micro-light-emitting diode display according to an embodiment of the present invention.

Claims (56)

A top-emitting micro-light-emitting diode display comprising: a first main substrate; a bottom common electrode layer disposed on a top surface of the first main substrate; and a plurality of micro-light emitting diodes disposed on the bottom common electrode layer a first light blocking layer disposed above the bottom common electrode layer to define a plurality of light emitting regions; a light guiding layer disposed in the light emitting regions; and a plurality of connecting structures disposed on the light emitting regions The regions are electrically connected to the micro-light emitting diodes. The top emission type micro light emitting diode display according to claim 1, wherein the connection structures have the same pattern. The top-emitting micro-light emitting diode display according to claim 1, wherein the connection structures comprise a transparent material. The top-emitting micro-light emitting diode display according to claim 1, wherein the connection structures comprise a non-transparent material. The top emission type micro light emitting diode display according to claim 1, wherein the first light blocking layer is a black matrix. The top emission type micro light emitting diode display according to claim 1, wherein the first light blocking layer has a thickness greater than a thickness of the light guiding layer. The top emission type micro light emitting diode display according to claim 1, wherein the first light blocking layer has a thickness smaller than a thickness of the light guiding layer, and the first light blocking layer and the light guiding layer Adjacent regions partially overlap each other, and the first light blocking layer is partially covered by the light guiding layer. The top-emitting micro-light-emitting diode display of claim 1, wherein each of the light-emitting regions corresponds to a micro-light emitting diode. The top-emitting micro-light-emitting diode display according to claim 1, wherein each of the light-emitting regions corresponds to a red micro-light emitting diode, a green micro-light emitting diode and a blue micro-light emitting diode Polar body. The top emission type micro light emitting diode display according to claim 1, wherein the red micro light emitting diode, the green micro light emitting diode and the blue micro light emitting diode in the light emitting region respectively correspond to The connection structure of the same pattern. The top emission type micro light emitting diode display according to claim 1, wherein the connection structure is formed entirely in the light emitting region. The top-emitting micro-light-emitting diode display according to claim 1, further comprising: a blocking substrate located above the first main substrate and the first light blocking layer; and a second light a blocking layer formed on a bottom surface of the blocking substrate, the second light blocking layer covering the light emitting region and a region other than the first light blocking layer; wherein the first light blocking layer has a frame shape to surround the In the light emitting region, the regions of the first light blocking layer adjacent to the second light blocking layer partially overlap each other. The top emission type micro light emitting diode display according to claim 12, wherein an opening inner diameter of the first light blocking layer is different from an opening inner diameter of the second light blocking layer. The top emission type micro light emitting diode display according to claim 12, wherein the second light blocking layer is a black matrix. The top-emitting micro-light-emitting diode display according to claim 12, wherein the material of the blocking substrate comprises a light-transmitting material. The top-emitting micro-light-emitting diode display according to claim 12, further comprising: a second main substrate at the same horizontal plane as the first main substrate, but corresponding to the respective micro-light-emitting diodes a first light blocking layer is disposed on the first main substrate and the second main substrate, wherein the first main substrate and the second main substrate correspond to the same blocking substrate, and Adjacent to the second main substrate, the first light blocking layer of the first main substrate and the first light blocking layer of the second main substrate correspond to the same second light blocking layer. The top-emitting micro-light-emitting diode display according to claim 1, wherein the micro-light-emitting diodes are rectangular and arranged in a vertical column. A method for forming a top-emitting micro-light-emitting diode display, comprising: providing a first main substrate; forming a plurality of micro-light-emitting diodes on the first main substrate; forming a first light-blocking layer on the first An upper portion of the main substrate defines a plurality of light-emitting regions; a light guiding layer is formed in the light-emitting regions; and a plurality of connecting structures are formed in the light-emitting regions and electrically connected to the micro-light emitting diodes. A method of forming a top emission type micro-light-emitting diode display according to claim 18, wherein the connection structures have the same pattern. A method of forming a top emission type micro light emitting diode display according to claim 18, wherein the connection structures comprise a transparent material. A method of forming a top-emitting micro-light-emitting diode display according to claim 18, wherein the connection structures comprise a non-transparent material. According to the method of forming a top-emitting micro-light-emitting diode display according to claim 18, before forming the micro-light-emitting diodes, a conductive layer is more completely formed in the plurality of light-emitting regions of the first main substrate. According to the method of forming the top-emitting type micro-light-emitting diode display according to claim 18, before the formation of the connection structures, contact holes are formed on the top surfaces of the micro-light-emitting diodes. A method of forming a top emission type micro light emitting diode display according to claim 18, wherein the first light blocking layer is a black matrix. A method for forming a top-emitting micro-light-emitting diode display according to claim 18, wherein the red micro-light emitting diode, the green micro-light emitting diode, and the blue micro-light emitting diode in the light-emitting region are respectively Corresponding to the connection structure of the same pattern. A method of forming a top emission type micro light emitting diode display according to claim 18, wherein the step of forming the first light blocking layer comprises: forming a black resin; and processing the black resin using an optical process and a curing process To form a black matrix light blocking layer. A method of forming a top emission type micro light emitting diode display according to claim 18, wherein the step of forming the first light blocking layer comprises: using an inkjet printing technique and a curing process to form a black matrix light blocking Floor. A method of forming a top emission type micro light emitting diode display according to claim 18, wherein the step of forming the first light blocking layer comprises: forming a chromium/chromia film; and treating the chromium using a photo etching technique / chrome oxide film to form a black matrix light blocking layer. A bottom-emitting micro-light-emitting diode display, comprising: a first main substrate; a plurality of micro-light emitting diodes disposed on the first main substrate; a first light blocking layer disposed on the first main a plurality of light-emitting regions are defined above the substrate; a light guiding layer is disposed in the light-emitting regions; a plurality of connecting structures are disposed in the light-emitting regions and electrically connected to the micro-light emitting diodes respectively; and a top portion The common electrode layer is disposed on the top surface of the first light blocking layer and the micro light emitting diodes. The bottom emission type micro light emitting diode display according to claim 29, wherein the connection structures have the same pattern. The bottom emission type micro light emitting diode display according to claim 29, wherein the connection structures comprise a transparent material. The bottom emission type micro light emitting diode display according to claim 29, wherein the connection structures comprise a non-transparent material. The bottom emission type micro light emitting diode display according to claim 29, wherein the first light blocking layer is a black matrix. The bottom emission type micro light emitting diode display according to claim 29, wherein the thickness of the first light blocking layer is greater than the thickness of the light guiding layer. The bottom emission type micro light emitting diode display according to claim 29, wherein the first light blocking layer has a thickness smaller than a thickness of the light guiding layer, the first light blocking layer and the light guiding layer Adjacent regions partially overlap each other, and the first light blocking layer is partially covered by the light guiding layer. A bottom-emitting micro-light-emitting diode display according to claim 29, wherein each of the light-emitting regions corresponds to a micro-light emitting diode. The bottom emission type micro light emitting diode display according to claim 29, wherein each of the light emitting regions corresponds to a red micro light emitting diode, a green micro light emitting diode and a blue micro light emitting diode Polar body. The bottom emission type micro light emitting diode display according to claim 29, wherein the red micro light emitting diode, the green micro light emitting diode and the blue micro light emitting diode in the light emitting region respectively correspond to The connection structure of the same pattern. The bottom emission type micro light emitting diode display according to claim 29, wherein the connection structure is formed entirely in the light emitting region. The bottom-emitting micro-light-emitting diode display according to claim 29, further comprising: a blocking substrate located below the first main substrate; and a second light blocking layer formed on the resistor Breaking a top surface of the substrate, the second light blocking layer covers the light emitting region and a region other than the first light blocking layer; wherein the first light blocking layer has a frame shape to surround the light emitting region, the first light The regions of the blocking layer adjacent to the second light blocking layer partially overlap each other. The bottom emission type micro light emitting diode display according to claim 40, wherein an opening inner diameter of the first light blocking layer is different from an opening inner diameter of the second light blocking layer. The bottom emission type micro light emitting diode display according to claim 40, wherein the second light blocking layer is a black matrix. The bottom-emitting micro-light-emitting diode display according to claim 40, wherein the material of the blocking substrate comprises a light-transmitting material. The bottom-emitting micro-light-emitting diode display according to claim 40, further comprising: a second main substrate located at the same horizontal plane as the first main substrate, but corresponding to the respective micro-light emitting diodes a first light blocking layer is disposed on the first main substrate and the second main substrate, wherein the first main substrate and the second main substrate correspond to the same blocking substrate, and Adjacent to the second main substrate, the first light blocking layer of the first main substrate and the first light blocking layer of the second main substrate correspond to the same second light blocking layer. The bottom-emitting micro-light-emitting diode display according to claim 29, wherein the micro-light-emitting diodes are rectangular and arranged in a vertical column. A method for forming a bottom-emitting micro-light-emitting diode display, comprising: providing a first main substrate; forming a plurality of connection structures in the plurality of light-emitting regions; forming a plurality of micro-light-emitting diodes electrically connected to the connection structures Forming a first light blocking layer above the first main substrate to define the light emitting regions to cover the connecting structures; and forming a light guiding layer in the light emitting regions. A method of forming a bottom emission type micro-light-emitting diode display according to claim 46, wherein the connection structures have the same pattern. A method of forming a bottom emission type micro light emitting diode display according to claim 46, wherein the connection structures comprise a transparent material. A method of forming a bottom emission type micro light emitting diode display according to claim 46, wherein the connection structures comprise a non-transparent material. According to the method of forming a bottom emission type micro light emitting diode display according to claim 46, after forming the light guiding layer or the first light blocking layer, a conductive layer is further formed on the first main substrate. The complex number of light-emitting areas. According to the method of forming a bottom-emitting type micro-light-emitting diode display according to claim 46 of the patent application, before forming the conductive layer, a contact hole is formed on the top surface of the micro-light-emitting diodes. A method of forming a bottom emission type micro light emitting diode display according to claim 46, wherein the first light blocking layer is a black matrix. A method for forming a bottom emission type micro light emitting diode display according to claim 46, wherein the red light emitting diode, the green micro light emitting diode and the blue micro light emitting diode in the light emitting region respectively Corresponding to the connection structure of the same pattern. A method of forming a bottom emission type micro light emitting diode display according to claim 46, wherein the step of forming the first light blocking layer comprises: forming a black resin; and processing the black resin using an optical process and a curing process To form a black matrix light blocking layer. A method of forming a bottom emission type micro light emitting diode display according to claim 46, wherein the step of forming the first light blocking layer comprises: using an inkjet printing technique and a curing process to form a black matrix light blocking Floor. A method of forming a bottom emission type micro light emitting diode display according to claim 46, wherein the step of forming the first light blocking layer comprises: forming a chromium/chromia film; and treating the chromium using a photo etching technique / chrome oxide film to form a black matrix light blocking layer.