CN110875346A - Top and bottom emission type micro-LED display and method for forming the same - Google Patents

Top and bottom emission type micro-LED display and method for forming the same Download PDF

Info

Publication number
CN110875346A
CN110875346A CN201811027497.0A CN201811027497A CN110875346A CN 110875346 A CN110875346 A CN 110875346A CN 201811027497 A CN201811027497 A CN 201811027497A CN 110875346 A CN110875346 A CN 110875346A
Authority
CN
China
Prior art keywords
micro
layer
light
led display
emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811027497.0A
Other languages
Chinese (zh)
Inventor
吴炳升
吴昭文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Prilit Optronics Inc
Original Assignee
Prilit Optronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Prilit Optronics Inc filed Critical Prilit Optronics Inc
Priority to CN201811027497.0A priority Critical patent/CN110875346A/en
Publication of CN110875346A publication Critical patent/CN110875346A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages

Abstract

The invention relates to a micro light emitting diode display, which comprises a first main substrate; a plurality of micro light emitting diodes arranged on the first main substrate; the first light resistance fault layer is arranged above the first main substrate to define a plurality of light emitting areas; the light guide layer is arranged in the light emitting areas; and a plurality of connecting structures which are arranged in the light emitting areas and are respectively electrically connected with the micro light emitting diodes.

Description

Top and bottom emission type micro-LED display and method for forming the same
Technical Field
The present invention relates to a light emitting diode display, and more particularly, to a top emission type (top emission) micro light emitting diode display and a bottom emission type (bottom emission) micro light emitting diode display.
Background
A micro light emitting diode (micro LED, mLED or mu LED) display panel is one of flat panel displays (flat panel displays), and is composed of individual micro (micro) light emitting diodes with the size grade of 1-10 micrometers. Compared with the conventional liquid crystal display panel, the micro light emitting diode display panel has larger contrast ratio and faster response time, and consumes less power. Although micro light emitting diodes have the same characteristics of low power consumption as Organic Light Emitting Diodes (OLEDs), micro light emitting diodes have higher brightness, higher light emission efficiency and longer lifetime than organic light emitting diodes because they use iii-v diode technology (e.g., gan).
An active driving method using a Thin Film Transistor (TFT) is a commonly used driving mechanism, which can be combined with a micro light emitting diode to manufacture a display panel. However, the thin film transistor is manufactured by a Complementary Metal Oxide Semiconductor (CMOS) process, and the micro light emitting diode is manufactured by a flip chip (flip chip) technology, which may cause a thermal mismatch problem, and the thin film transistor is complicated in manufacturing process. In low gray scale display, the driving current is very small, which affects the gray scale display by the leakage current of the micro-LED.
Passive drive is another drive mechanism. In a conventional passive driving display panel, the column driving circuit and the row driving circuit are disposed at the edge of the display panel. However, when the size of the display panel becomes large or the resolution becomes high, the output load of the driver becomes excessive, and the display panel cannot be normally driven due to the excessive delay time. Therefore, the passive driving mechanism is not suitable for a large-sized micro led display panel.
Therefore, it is desirable to provide a novel micro-led display panel, especially a large-size or high-resolution display panel, which retains the advantages of the micro-leds and improves the disadvantages of the conventional driving scheme.
Since the distance between the adjacent micro-leds is very small, it is easy to cause mutual interference between the adjacent micro-leds or adjacent pixels, such as color mixing (color mixing), and reduce contrast ratio (contrast ratio). In addition, the micro-leds need to be electrically connected to other components or circuits through connecting wires, which usually include opaque (opaque) materials or reflective (reflective) materials, thereby causing non-uniform display problems.
Therefore, a new micro led display is needed to improve the light emitting efficiency of the conventional micro led display.
Disclosure of Invention
In view of the above, an objective of the embodiments of the present invention is to provide a structure and a manufacturing method of a top-emission micro led display and a bottom-emission micro led display, which effectively avoid the display problems of interference, color mixing or non-uniformity.
The purpose of the invention and the technical problem to be solved are realized by adopting the following technical scheme.
According to one embodiment of the present invention, a top emission micro-led display includes a first main substrate; a bottom common electrode layer disposed on the top surface of the first main substrate; a plurality of micro light emitting diodes arranged on the bottom common electrode layer; the first light resistance fault layer is arranged above the bottom common electrode layer to define a plurality of light emitting areas; the light guide layer is arranged in the light emitting areas; and a plurality of connecting structures which are arranged in the light emitting areas and are respectively electrically connected with the micro light emitting diodes.
The top-emitting micro-LED display has the same pattern in the connecting structures.
The top-emitting micro-LED display comprises a plurality of connecting structures, wherein the connecting structures comprise transparent materials.
The top-emitting micro-LED display comprises a plurality of connecting structures, wherein the connecting structures comprise non-transparent materials.
The top-emission micro-LED display comprises a first light blocking layer and a second light blocking layer, wherein the first light blocking layer is a black matrix.
The top-emitting micro-LED display comprises a first light blocking layer, a second light blocking layer and a light guide layer, wherein the thickness of the first light blocking layer is larger than that of the light guide layer.
The top-emitting micro-LED display comprises a first light guide layer, a first light resistance layer, a second light resistance layer, a first light resistance layer and a second light resistance layer, wherein the thickness of the first light resistance layer is smaller than that of the light guide layer, the adjacent areas of the first light resistance layer and the light guide layer are partially overlapped with each other, and the first light resistance layer is partially covered by the light guide layer.
The top-emitting micro-LED display is characterized in that each light-emitting area corresponds to one micro-LED.
The top-emitting micro-LED display comprises a plurality of light-emitting areas, wherein each light-emitting area corresponds to one red micro-LED, one green micro-LED and one blue micro-LED.
The top-emitting micro-LED display comprises a light emitting area, wherein the red micro-LED, the green micro-LED and the blue micro-LED in the light emitting area respectively correspond to the same pattern of connecting structures.
The top-emitting micro-LED display is characterized in that the connecting structure is formed in the light-emitting area completely.
The top-emitting micro-LED display further comprises a blocking substrate positioned above the first main substrate and the first photoresist layer; and a second light resistance fault layer formed on the bottom surface of the blocking substrate, wherein the second light resistance fault layer covers the light emitting area and the area except the first light resistance fault layer; wherein the first photoresist layer has a frame shape to surround the light emitting region, and the adjacent regions of the first photoresist layer and the second photoresist layer are partially overlapped with each other.
The top-emitting micro-LED display comprises a first light resistance fault layer and a second light resistance fault layer, wherein the inner diameter of an opening of the first light resistance fault layer is different from the inner diameter of an opening of the second light resistance fault layer.
The top-emission micro-LED display comprises a second light blocking layer, a first light blocking layer and a second light blocking layer, wherein the second light blocking layer is a black matrix.
The top-emission micro-LED display comprises a blocking substrate made of a light-transmitting material.
The top-emitting micro-LED display further comprises a second main substrate, which is positioned on the same horizontal plane with the first main substrate and respectively corresponds to the respective micro-LED display panels, and first light resistance faults are respectively arranged on the first main substrate and the second main substrate; the first main substrate and the second main substrate correspond to the same blocking substrate, and the first light resistance fault layer of the first main substrate and the first light resistance fault layer of the second main substrate correspond to the same second light resistance fault layer at the adjacent position of the first main substrate and the second main substrate.
The top-emitting micro-LED display further comprises a shielding layer arranged between the blocking substrate and the second photoresist layer for shielding electromagnetic interference.
The top-emission micro-LED display comprises a shielding layer made of transparent conductive material.
The top-emitting micro light-emitting diode display is characterized in that the micro light-emitting diodes are rectangular and are arranged in vertical columns.
The object of the present invention and the technical problems solved thereby can be further achieved by the following technical measures.
The invention provides a method for forming a top-emitting micro-LED display, which comprises providing a first main substrate, forming a plurality of micro-LEDs on the first main substrate; forming a first photoresist layer over the first host substrate to define a plurality of light emitting areas; forming a light guide layer in the light emitting areas; and forming a plurality of connecting structures in the light emitting areas and electrically connecting the connecting structures with the micro light emitting diodes respectively.
The method for forming the top-emitting micro-LED display comprises the step of forming a plurality of connecting structures on the substrate, wherein the connecting structures have the same pattern.
The method for forming the top-emission micro-LED display comprises the step of forming a plurality of connecting structures on the substrate.
The method for forming the top-emission micro-LED display comprises the step of forming a plurality of connecting structures on the substrate, wherein the connecting structures comprise non-transparent materials.
Before the micro light-emitting diodes are formed, a conductive layer is more completely formed in a plurality of light-emitting areas of the first main substrate.
Before the connecting structures are formed, contact holes are further formed on the top surfaces of the micro light-emitting diodes.
The method for forming the top-emission micro-LED display comprises forming the first light blocking layer as a black matrix.
The method for forming the top-emitting micro-LED display comprises the steps that the red micro-LEDs, the green micro-LEDs and the blue micro-LEDs in the light emitting areas respectively correspond to the connecting structures with the same patterns.
The method for forming a top emission type micro-led display comprises forming a first photoresist layer on a substrate; and processing the black resin using an optical process and a curing process to form a black matrix photoresist layer.
The method for forming the top-emission micro-LED display comprises forming the first photoresist layer by ink-jet printing and curing.
The method for forming a top emission micro-led display comprises forming a chrome/chrome oxide film; and processing the chromium/chromium oxide film using a photolithography technique to form a black matrix resist layer.
According to still another embodiment of the present invention, a bottom emission type micro light emitting diode display includes a first main substrate; a plurality of micro light emitting diodes arranged on the first main substrate; the first light resistance fault layer is arranged above the first main substrate to define a plurality of light emitting areas; the light guide layer is arranged in the light emitting areas; the connecting structures are arranged in the light emitting areas and are respectively and electrically connected with the micro light emitting diodes; and the top common electrode layer is arranged on the first light resistance fault layer and the top surfaces of the micro light-emitting diodes.
The object of the present invention and the technical problems solved thereby can be further achieved by the following technical measures.
The bottom-emitting micro-LED display has the same pattern in the connecting structures.
The bottom-emitting micro-LED display comprises a plurality of connecting structures, wherein the connecting structures comprise transparent materials.
The bottom-emitting micro-LED display comprises a plurality of connecting structures, wherein the connecting structures comprise non-transparent materials.
The bottom-emission micro-LED display comprises a first light blocking layer and a second light blocking layer, wherein the first light blocking layer is a black matrix.
The bottom-emitting micro-LED display is characterized in that the thickness of the first light resistance fault layer is larger than that of the light guide layer.
The bottom-emitting micro-LED display comprises a first light guide layer, a first light resistance layer, a second light resistance layer, a first light resistance layer and a second light resistance layer, wherein the thickness of the first light resistance layer is smaller than that of the light guide layer, the adjacent areas of the first light resistance layer and the light guide layer are partially overlapped with each other, and the first light resistance layer is partially covered by the light guide layer.
The bottom-emission micro-LED display is characterized in that each light-emitting area corresponds to one micro-LED.
The bottom-emitting micro-LED display comprises a plurality of light-emitting areas, wherein each light-emitting area corresponds to a red micro-LED, a green micro-LED and a blue micro-LED.
The bottom light-emitting micro-LED display comprises a light-emitting area, wherein the red micro-LED, the green micro-LED and the blue micro-LED in the light-emitting area respectively correspond to the connecting structures with the same pattern.
The bottom-emitting micro-LED display is characterized in that the connecting structure is formed in the light-emitting area completely.
The bottom-emitting micro-LED display further comprises a shielding layer arranged between the first main substrate and the first photoresist layer for shielding electromagnetic interference.
The bottom-emission micro-LED display comprises a shielding layer made of transparent conductive material.
The bottom-emitting micro-LED display further comprises a blocking substrate positioned below the first main substrate; and a second light resistance fault layer formed on the top surface of the blocking substrate, wherein the second light resistance fault layer covers the light emitting area and the area except the first light resistance fault layer; wherein the first photoresist layer has a frame shape to surround the light emitting region, and the adjacent regions of the first photoresist layer and the second photoresist layer are partially overlapped with each other.
The bottom-emitting micro-LED display is characterized in that the inner diameter of the opening of the first light resistance fault layer is different from the inner diameter of the opening of the second light resistance fault layer.
The bottom-emission micro-LED display comprises a second light blocking layer, a first light blocking layer and a second light blocking layer, wherein the second light blocking layer is a black matrix.
The bottom-emitting micro-LED display comprises a blocking substrate made of a light-transmitting material.
The bottom-emitting micro-LED display further comprises a shielding layer arranged between the blocking substrate and the second photoresist layer for shielding electromagnetic interference.
The bottom-emission micro-LED display comprises a shielding layer made of transparent conductive material.
The bottom-emitting micro-LED display further comprises a second main substrate, which is positioned on the same horizontal plane with the first main substrate and respectively corresponds to the respective micro-LED display panels, and first light resistance faults are respectively arranged on the first main substrate and the second main substrate; the first main substrate and the second main substrate correspond to the same blocking substrate, and the first light resistance fault layer of the first main substrate and the first light resistance fault layer of the second main substrate correspond to the same second light resistance fault layer at the adjacent position of the first main substrate and the second main substrate.
The bottom-emitting micro-LED display further comprises a shielding layer arranged between the second main substrate and the first photoresist layer for shielding electromagnetic interference.
The bottom-emission micro-LED display comprises a shielding layer made of transparent conductive material.
The bottom-emitting micro light-emitting diode display is characterized in that the micro light-emitting diodes are rectangular and are arranged in vertical columns.
The bottom-emitting micro-LED display further comprises a flood-proof layer arranged on the bottom surface of the first main substrate and positioned between adjacent micro-LEDs or pixels.
The bottom-emitting micro-LED display comprises a first main substrate, a second main substrate, a light-resistant layer and a floodlight-proof layer, wherein the floodlight-proof layer is arranged on the other side of the first light-resistant layer corresponding to the first main substrate.
The bottom emission type micro light emitting diode display, wherein the anti-flooding layer comprises a black matrix.
The bottom emission type micro light emitting diode display wherein the black matrix comprises chrome/chrome oxide, black resin or ink-jet.
The object of the present invention and the technical problems solved thereby can be further achieved by the following technical measures.
The invention provides a method for forming a bottom-emitting micro-LED display, which comprises providing a first main substrate; forming a plurality of connecting structures in the plurality of light emitting areas; forming a plurality of micro light emitting diodes electrically connected to the connecting structures; forming a first photoresist layer on the first main substrate to define the light-emitting regions covering the connection structures; and forming a light guide layer in the light emitting areas.
The method for forming the bottom-emitting micro-LED display comprises the step of forming a plurality of connecting structures on the substrate.
The method for forming the bottom-emitting micro-LED display comprises the step of forming the connecting structures by using a transparent material.
The method for forming the bottom-emitting micro-LED display comprises the step of forming the connecting structures by using a non-transparent material.
The method for forming the bottom-emitting micro-LED display is characterized in that after the light guide layer or the first light resistance fault layer is formed, the conductive layer is formed in the plurality of light emitting areas of the first main substrate more completely.
Before the conductive layer is formed, contact holes are further formed on the top surfaces of the micro light-emitting diodes.
The method for forming the bottom-emitting micro-LED display comprises the step of forming a first light blocking layer on the first substrate, wherein the first light blocking layer is a black matrix.
The method for forming the bottom-emitting micro-LED display comprises the steps that the red micro-LEDs, the green micro-LEDs and the blue micro-LEDs in the light emitting areas respectively correspond to the connecting structures with the same patterns.
The method for forming the bottom-emission micro-LED display comprises forming a first light blocking layer on a substrate; and processing the black resin using an optical process and a curing process to form a black matrix photoresist layer.
The method for forming the bottom-emission micro-LED display comprises the following steps: the black matrix photoresist layer is formed using an inkjet printing technique and a curing process.
The method for forming the bottom-emission micro-LED display comprises the following steps: forming a chromium/chromium oxide film; and processing the chromium/chromium oxide film using a photolithography technique to form a black matrix resist layer.
Drawings
Fig. 1 shows a simplified side view of a top-emitting micro-led display.
Fig. 2A is a top view of a top-emission micro led display according to a first embodiment of the invention.
Fig. 2B shows a cross-sectional view of fig. 2A.
Fig. 2C shows a cross-sectional view of a top-emission micro-led display according to a first variant embodiment of the invention.
Fig. 2D shows another top view of the top-emission micro led display according to the first embodiment of the invention.
Fig. 3A is a top view of a top-emission micro led display according to a second embodiment of the invention.
FIG. 3B shows a cross-sectional view of FIG. 3A.
Fig. 3C shows a cross-sectional view of a top-emission micro-led display according to a second variant embodiment of the invention.
Fig. 3D is another top view of a top-emission micro led display according to a second embodiment of the present invention.
Fig. 4A is a top view of a top-emission micro led display according to a third embodiment of the present invention.
Fig. 4B shows a cross-sectional view of fig. 4A.
Fig. 4C shows a cross-sectional view of a top-emission micro-led display according to a third variant embodiment of the invention.
Fig. 5A is a top view of a top-emission micro led display according to a fourth embodiment of the invention.
Fig. 5B shows a cross-sectional view of fig. 5A.
Fig. 5C shows a cross-sectional view of a top-emission type micro-led display according to a fourth variation of the present invention.
Fig. 6 is a cross-sectional view of a top-emission micro-led display according to a fifth embodiment of the present invention.
FIGS. 7A-13B are top and cross-sectional views of steps in a process for forming a top-emitting micro-LED display according to an embodiment of the present invention.
Fig. 14 shows a simplified side view of a bottom-emitting micro-led display.
Fig. 15A is a top view of a bottom-emission micro-led display according to a sixth embodiment of the invention.
Fig. 15B shows a cross-sectional view of fig. 15A.
Fig. 15C shows a cross-sectional view of a bottom-emission type micro led display according to a modified sixth embodiment of the present invention.
Fig. 15D is a top view of a bottom-emission micro led display according to a sixth embodiment of the invention.
Fig. 16A is a top view of a bottom emission type micro led display according to a seventh embodiment of the present invention.
Fig. 16B shows a cross-sectional view of fig. 16A.
Fig. 16C is a cross-sectional view of a bottom-emission type micro led display according to a seventh embodiment of the present invention.
Fig. 16D is a top view of a bottom-emission micro led display according to a seventh embodiment of the invention.
Fig. 17A is a top view of a bottom-emission micro-led display according to an eighth embodiment of the present invention.
Fig. 17B shows a cross-sectional view of fig. 17A.
Fig. 17C is a cross-sectional view showing a bottom emission type micro led display according to an eighth modified embodiment of the present invention.
Fig. 18A is a top view of a bottom-emission micro-led display according to a ninth embodiment of the invention.
Fig. 18B shows a cross-sectional view of fig. 18A.
Fig. 18C shows a cross-sectional view of a bottom-emission type micro led display according to a modified ninth embodiment of the present invention.
Fig. 19 is a cross-sectional view showing a bottom emission type micro led display according to a tenth embodiment of the present invention.
FIGS. 20A-26B are top and cross-sectional views illustrating various process steps for forming a bottom-emitting micro-LED display according to an embodiment of the present invention.
Fig. 27 is a cross-sectional view showing a bottom emission type micro led display according to an eleventh embodiment of the present invention.
Fig. 28 is a cross-sectional view showing a top-emission type micro led display according to a twelfth embodiment of the present invention.
Fig. 29 is a cross-sectional view showing a bottom emission type micro led display according to a thirteenth embodiment of the present invention.
Fig. 30 is a sectional view showing a bottom-emission type micro light emitting diode display according to a modified thirteenth embodiment of the present invention.
Fig. 31 is a cross-sectional view of a bottom emission type micro led display according to a fourteenth embodiment of the present invention.
Fig. 32 is a cross-sectional view showing a bottom-emission type micro led display according to a fourteenth modification of the present invention.
[ description of main element symbols ]
100 top-emission type micro-led display
200 top-emitting micro-led display
300 top-emitting micro-LED display
400 top-emitting micro-LED display
500 top-emitting micro-led display
600 top-emitting micro-LED display
1400 bottom light type micro light emitting diode display
1500 bottom-emitting micro-LED display
1600 bottom-emitting micro-led display
1700 bottom emission type micro light emitting diode display
1800 bottom lighting type micro-LED display
1900 bottom emission type micro led display
2000 bottom-emitting micro-led display
2100 top emission type micro led display
2900 bottom emission type micro LED display
3100 bottom emission type micro led display
11 main substrate
12 micro light emitting diode
12R red micro light-emitting diode
12G green micro light-emitting diode
12B blue micro light-emitting diode
21A first main substrate
21B a second main substrate
22 micro light-emitting diode
22R red micro light-emitting diode
22G green micro light-emitting diode
22B blue micro light-emitting diode
23A first resist layer
23B second resist layer
24 luminous zone
25 light guide layer
26 connecting structure
27 blocking substrate
28 (bottom/top) common electrode layer
29 insulating layer
30 shielding layer
31 insulating layer
32 anti-floodlight layer
d1 inside diameter of opening
d2 inside diameter of opening
Detailed Description
Fig. 1 shows a simplified side view of a top emission (top emission) micro-led display 100. In the present embodiment, a bonding technique is used to provide a plurality of micro-leds 12, such as red micro-leds 12R, green micro-leds 12G and blue micro-leds 12B, on the top surface of the main substrate 11. The light generated by the micro-leds 12 is emitted upward from the top surface of the main substrate 11 (as shown by arrows), and is therefore referred to as a top-emission micro-led display. In the specification, the size of the micro light emitting diode is 1-10 microns. However, it may be smaller or larger due to the application field of the product or the development of the future technology.
Fig. 2A is a top view of a top-emission micro led display 200 according to a first embodiment of the invention, and fig. 2B is a cross-sectional view of fig. 2A. In the present embodiment, a plurality of micro-leds 22, such as a red micro-led 22R, a green micro-led 22G and a blue micro-led 22B, are disposed on the top surface of the (first) main substrate 21A. A (first) light blocking layer 23A is disposed between the adjacent micro light emitting diodes 22 and formed on the top surface of the (first) main substrate 21A to prevent mutual interference (e.g., color mixing) between the adjacent micro light emitting diodes 22 and improve contrast. A bottom common electrode (bottom common electrode) layer 28 may be disposed between the main substrate 21A and the micro-leds 22. In this embodiment (and subsequent embodiments), the micro-leds 22 may be rectangular. For example, 25 microns long by 10 microns wide. According to one feature of an embodiment of the present invention, the micro-leds 22 are arranged in vertical columns. That is, the long sides of the micro-leds 22 are parallel to the longitudinal direction of the display and the short sides are parallel to the lateral direction of the display. The orientation increases the angle of visibility since the human eye perceives the light emitted vertically more than horizontally.
The (first) light blocking layer 23A of the present embodiment may be a Black Matrix (BM). In the embodiment shown in fig. 2B, a black resin (black resin) is formed first, and then a black matrix (first) photoresist layer 23A is formed by using a photo process and a curing process. In another embodiment, an ink-jet printing (ink-jet printing) technique and a curing process are used to form the black matrix (first) photoresist layer 23A.
The (first) light blocking layer 23A defines a light emitting area (emission area)24, that is, a region not covered by the (first) light blocking layer 23A is referred to as a light emitting area 24. Stated another way, all regions except the light emitting region 24 are covered with the (first) light blocking layer 23A. In the light-emitting region 24, a light guiding layer 25 is formed, which includes a light guiding material for expanding the light generated by the micro-leds 22. The light guide material is generally transparent and has a high refractive index. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24.
In the present embodiment, the thickness of the (first) light blocking layer 23A is larger than the thickness of the light guiding layer 25. In addition, the thickness of the light guiding layer 25 may be larger than the thickness of the micro light emitting diode 22, as shown in fig. 2B. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro-leds 22.
Fig. 2C shows a cross-sectional view of a top-emission micro-led display 200 according to a first variant embodiment of the invention. In comparison with fig. 2B, the thickness of the (first) light blocking layer 23A of the embodiment shown in fig. 2C is smaller than that of the light guiding layer 25. In addition, regions where the (first) light blocking layer 23A and the light guide layer 25 are adjacent overlap each other partially, and the (first) light blocking layer 23A is partially covered with the light guide layer 25. In the embodiment shown in fig. 2C, a chromium/chromium oxide film is first formed, and then a photolithography (photolithography) technique is used to form the black matrix (first) light blocking layer 23A.
Fig. 2D shows another top view of the top-emission micro led display 200 according to the first embodiment of the invention. Each light-emitting region 24 includes a connection structure 26, such as a conductive electrode, disposed on the top surface of the micro-LED 22. According to one of the features of the embodiment of the present invention, the patterns (patterns) of the connection structures 26 of each light emitting region 24 are the same. The connection structure 26 may be made of a transparent material (e.g., ito), a non-transparent material (e.g., metal), or a reflective material. Since the present embodiment has the same pattern of connecting structures 26 in each light emitting region 24, the problem of non-uniform display can be avoided.
Fig. 3A is a top view of a top-emission micro led display 300 according to a second embodiment of the invention, and fig. 3B is a cross-sectional view of fig. 3A. This second embodiment is similar to the first embodiment except that the (first) light blocking layer 23A of the second embodiment is disposed between adjacent pixels (rather than between adjacent micro-leds 22) to avoid interference (e.g., color mixing) between adjacent pixels and to improve contrast.
The (first) light blocking layer 23A defines a light emitting region 24, that is, a region not covered by the (first) light blocking layer 23A is referred to as a light emitting region 24 (or a pixel region). Stated another way, all regions except the light emitting region 24 are covered with the (first) light blocking layer 23A. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24.
In the present embodiment, the thickness of the (first) light blocking layer 23A is larger than the thickness of the light guiding layer 25. In addition, the thickness of the light guiding layer 25 may be larger than the thickness of the micro light emitting diodes 22, as shown in fig. 3B. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro-leds 22.
Fig. 3C shows a cross-sectional view of a top-emission micro-led display 300 according to a second variant embodiment of the invention. In comparison with fig. 3B, the thickness of the (first) light blocking layer 23A of the embodiment shown in fig. 3C is smaller than that of the light guiding layer 25. In addition, regions where the (first) light blocking layer 23A and the light guide layer 25 are adjacent overlap each other partially, and the (first) light blocking layer 23A is partially covered with the light guide layer 25.
Fig. 3D shows another top view of the top-emission micro led display 300 according to the second embodiment of the invention. Each light-emitting region 24 contains a connection structure 26, such as a conductive electrode. According to one of the features of the present embodiment, the pattern of the connecting structures 26 corresponding to each of the micro-leds 22 in the light-emitting area 24 is the same, and each of the light-emitting areas 24 has the same pattern of connecting structures 26. Since the patterns of the connecting structures 26 corresponding to each micro led 22 in the light emitting region 24 of the present embodiment are the same, and the patterns of the connecting structures 26 in each light emitting region 24 are also the same, the problem of non-uniform display can be avoided.
Fig. 4A is a top view and fig. 4B is a cross-sectional view of a top-emission micro-led display 400 according to a third embodiment of the invention. In the present embodiment, a plurality of micro-leds 22, such as a red micro-led 22R, a green micro-led 22G and a blue micro-led 22B, are disposed on the top surface of the (first) main substrate 21A. Each micro-led 22 has a corresponding light-emitting area 24. The present embodiment includes a frame-shaped first photoresist layer 23A surrounding the light emitting region 24 and disposed on the top surface of the (first) main substrate 21A. The present embodiment further includes a blocking substrate 27 located above the (first) main substrate 21A and the first light blocking layer 23A. The second light blocking layer 23B is formed on the bottom surface of the blocking substrate 27, covering the light emitting region 24 and the region other than the first light blocking layer 23A. The regions adjacent to the first light blocking layer 23A and the second light blocking layer 23B partially overlap each other. Therefore, the opening (aperture) inner diameter d1 of the first light blocking layer 23A is different from (e.g., smaller than) the opening inner diameter d2 of the second light blocking layer 23B. In another embodiment, the inner diameter of the opening of the first light blocking layer 23A may be larger than the inner diameter of the opening of the second light blocking layer 23B. The first photoresist layer 23A and the second photoresist layer 23B of the present embodiment can be Black Matrixes (BM), and the blocking substrate 27 can be a transparent material, such as quartz, glass or plastic.
In the light emitting region 24, a light guiding layer 25 is formed, which includes a light guiding material for expanding the light generated by the micro light emitting diodes 22. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24.
In the present embodiment, the thickness of the first light blocking layer 23A is greater than the thickness of the light guiding layer 25. In addition, the thickness of the light guiding layer 25 may be larger than the thickness of the micro light emitting diodes 22, as shown in fig. 4B. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro-leds 22.
Fig. 4C shows a cross-sectional view of a top-emission micro-led display 400 according to a variation of the present invention. In comparison with fig. 4B, the thickness of the first light blocking layer 23A in the embodiment shown in fig. 4C is smaller than that of the light guiding layer 25. Further, the first light blocking layer 23A is covered with the light guiding layer 25.
According to one feature of the present embodiment, the pattern of the connection structures (not shown) in each light-emitting region 24 is the same. Since the present embodiment has the same pattern of connection structures in each light emitting region 24, the problem of non-uniform display can be avoided.
Fig. 5A is a top view and fig. 5B is a cross-sectional view of a top-emission micro-led display 500 according to a fourth embodiment of the invention. The fourth embodiment is similar to the third embodiment except that the first and second photoresist layers 23A and 23B of the fourth embodiment are disposed between adjacent pixels (instead of between adjacent micro-leds 22) to avoid mutual interference (e.g., color mixing) between adjacent pixels and improve contrast.
In the present embodiment, each pixel (which includes the red micro led 22R, the green micro led 22G and the blue micro led 22B) has a corresponding light-emitting area 24. The present embodiment includes a frame-shaped first photoresist layer 23A surrounding the light emitting region 24 and disposed on the top surface of the (first) main substrate 21A. The present embodiment further includes a second photoresist layer 23B formed on the bottom surface of the blocking substrate 27 to cover the light emitting region 24 and the region except the first photoresist layer 23A. The first light blocking layer 23A and the second light blocking layer 23B are adjacent to each other, and partially overlap each other. Therefore, the opening inner diameter d1 of the first light blocking layer 23A is different from (e.g., smaller than) the opening inner diameter d2 of the second light blocking layer 23B. The first photoresist layer 23A and the second photoresist layer 23B of the present embodiment can be Black Matrixes (BM), and the blocking substrate 27 can be a transparent material, such as quartz, glass or plastic.
In the light emitting region 24, a light guiding layer 25 is formed, which includes a light guiding material for expanding the light generated by the micro light emitting diodes 22. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24.
In the present embodiment, the thickness of the first light blocking layer 23A is greater than the thickness of the light guiding layer 25. In addition, the thickness of the light guiding layer 25 may be larger than the thickness of the micro light emitting diode 22, as shown in fig. 5B. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro-leds 22.
Fig. 5C shows a cross-sectional view of a top-emission micro-led display 500 according to a fourth variation of the present invention. In comparison with fig. 5B, the thickness of the first light blocking layer 23A in the embodiment shown in fig. 5C is smaller than that of the light guiding layer 25. Further, the first light blocking layer 23A is partially covered with the light guiding layer 25.
According to one feature of the present embodiment, the pattern of the connecting structure (not shown) corresponding to each micro led 22 in the light emitting region 24 is the same, and each light emitting region 24 has the same connecting structure pattern. Since the patterns of the connection structures corresponding to each micro led 22 in the light emitting region 24 are the same, and the patterns of the connection structures of each light emitting region 24 are also the same, the problem of non-uniform display can be avoided.
Fig. 6 shows a cross-sectional view of a top-emission micro-led display 600 according to a fifth embodiment of the present invention. In the present embodiment, the top-emission micro led display 600 includes a first main substrate 21A and a second main substrate 21B, which are located at the same horizontal plane and respectively correspond to the respective micro led display panels. First light blocking layers 23A are provided on the top surfaces of the first main substrate 21A and the second main substrate 21B, respectively. Similar to the structure of the fourth embodiment, the top-emission micro led display 600 includes a second light blocking layer 23B formed on the bottom surface of the blocking substrate 27 to cover the light emitting region 24 and the region except the first light blocking layer 23A. As shown in fig. 6, the first principal substrate 21A and the second principal substrate 21B correspond to the same blocking substrate 27, and the first light blocking layer 23A of the first principal substrate 21A and the first light blocking layer 23A of the second principal substrate 21B correspond to the same second light blocking layer 23B at the vicinity of the first principal substrate 21A and the second principal substrate 21B. Thus, a plurality of micro led display panels can be bonded (bonding) together to form a seamless top emission type micro led display 600.
FIGS. 7A-13B are top and cross-sectional views of steps in a process for forming a top-emitting micro-LED display according to an embodiment of the present invention. As shown in fig. 7A and 7B, a (first) main substrate 21A is first provided, which defines a light-emitting region 24. As shown in fig. 8A and 8B, a bottom common electrode layer 28 is formed on the top surface of the main substrate 21A. According to one feature of an embodiment of the present invention, the bottom common electrode layer 28 covers the entire light emitting region 24 to avoid non-uniform display.
As shown in fig. 9A and 9B, a plurality of micro-leds 22, such as a red micro-led 22R, a green micro-led 22G and a blue micro-led 22B, are disposed on the top surface of the bottom common electrode layer 28 by using a bonding (bonding) technique. As shown in fig. 10A and 10B, a (first) light blocking layer 23A is formed in the region outside the light emitting region 24 to prevent mutual interference (e.g., color mixing) between adjacent pixels and improve contrast.
As shown in fig. 11A and 11B, a light guiding layer 25 is formed in the light emitting region 24 to expand the light generated by the micro-leds 22. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24. The thickness of the light guiding layer 25 may be greater than the thickness of the micro-leds 22, as shown in fig. 11B. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro-leds 22. It is noted that the steps of forming the (first) light blocking layer 23A (fig. 10A and 10B) and the steps of forming the light guiding layer 25 (fig. 11A and 11B) may be interchanged.
As shown in fig. 12A and B and fig. 12B, contact holes (contact holes) are formed on the top surfaces of the micro-leds 22. Next, as shown in fig. 13A and 13B, a plurality of connection structures 26 are formed and respectively connected to the micro light emitting diodes 22. The patterns of the connecting structures 26 are the same, and each light emitting area 24 has the same pattern of connecting structures 26. Thereby, the problem of uneven display can be avoided.
Fig. 14 shows a simplified side view of a bottom emission (bottom emission) micro-led display 1400. In the present embodiment, a bonding technique is used to provide a plurality of micro-leds 12, such as red micro-leds 12R, green micro-leds 12G and blue micro-leds 12B, on the top surface of the main substrate 11. The light generated by the micro-leds 12 is emitted downward from the top surface of the main substrate 11 (as shown by arrows), and is therefore referred to as a bottom emission type micro-led display. In the specification, the size of the micro light emitting diode is 1-10 microns. However, it may be smaller or larger due to the application field of the product or the development of the future technology.
Fig. 15A is a top view and fig. 15B is a cross-sectional view of a bottom-emission micro-led display 1500 according to a sixth embodiment of the invention. In the present embodiment, a plurality of micro-leds 22, such as a red micro-led 22R, a green micro-led 22G and a blue micro-led 22B, are disposed on the top surface of the (first) main substrate 21A. A (first) light blocking layer 23A is disposed between the adjacent micro light emitting diodes 22 and formed on the top surface of the (first) main substrate 21A to prevent mutual interference (e.g., color mixing) between the adjacent micro light emitting diodes 22 and improve contrast. A top common electrode (top common electrode) layer 28 may be disposed over the micro-LEDs 22 and the photoresist layer 23A.
The (first) light blocking layer 23A of the present embodiment may be a Black Matrix (BM). In the embodiment shown in fig. 15B, a black resin (black resin) is formed first, and then a black matrix (first) photoresist layer 23A is formed by using a photo process and a curing process. In another embodiment, an ink-jet printing (ink-jet printing) technique and a curing process are used to form the black matrix (first) photoresist layer 23A.
The (first) light blocking layer 23A defines a light emitting area (emission area)24, that is, a region not covered by the (first) light blocking layer 23A is referred to as a light emitting area 24. Stated another way, all regions except the light emitting region 24 are covered with the (first) light blocking layer 23A. In the light-emitting region 24, a light guiding layer 25 is formed, which includes a light guiding material for expanding the light generated by the micro-leds 22. The light guide material is generally transparent and has a high refractive index. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24.
In the present embodiment, the thickness of the (first) light blocking layer 23A is larger than the thickness of the light guiding layer 25. In addition, the thickness of the light guiding layer 25 may be larger than that of the micro light emitting diode 22, as shown in fig. 15B. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro-leds 22.
Fig. 15C is a cross-sectional view of a bottom-emission micro-led display 1500 according to a modified sixth embodiment of the present invention. In comparison with fig. 15B, the thickness of the (first) light blocking layer 23A of the embodiment shown in fig. 15C is smaller than that of the light guiding layer 25. In addition, regions where the (first) light blocking layer 23A and the light guide layer 25 are adjacent overlap each other partially, and the (first) light blocking layer 23A is partially covered with the light guide layer 25. In the embodiment shown in fig. 15C, a chrome/chrome oxide film is first formed, and then a photo etching (photo etching) technique is used to form the black matrix (first) photoresist layer 23A.
Fig. 15D shows another top view of the bottom emission micro led display 1500 according to the sixth embodiment of the invention. Each light-emitting region 24 includes a connection structure 26 disposed between the micro-leds 22 and the main substrate 21A. According to one of the features of the embodiment of the present invention, the patterns (patterns) of the connection structures 26 of each light emitting region 24 are the same. The connection structure 26 may be made of a transparent material (e.g., ito), a non-transparent material (e.g., metal), or a reflective material. Since the present embodiment has the same pattern of connecting structures 26 in each light emitting region 24, the problem of non-uniform display can be avoided.
Fig. 16A is a top view and fig. 16B is a cross-sectional view of a bottom-emission micro-led display 1600 according to a seventh embodiment of the invention. The seventh embodiment is similar to the sixth embodiment except that the (first) light blocking layer 23A of the seventh embodiment is disposed between adjacent pixels (instead of between adjacent micro-leds 22) to avoid mutual interference (e.g., color mixing) between adjacent pixels and improve contrast.
The (first) light blocking layer 23A defines a light emitting region 24, that is, a region not covered by the (first) light blocking layer 23A is referred to as a light emitting region 24 (or a pixel region). Stated another way, all regions except the light emitting region 24 are covered with the (first) light blocking layer 23A. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24.
In the present embodiment, the thickness of the (first) light blocking layer 23A is larger than the thickness of the light guiding layer 25. In addition, the thickness of the light guiding layer 25 may be larger than the thickness of the micro light emitting diodes 22, as shown in fig. 16B. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro-leds 22.
Fig. 16C shows a cross-sectional view of a bottom-emission micro-led display 1600 according to a modified seventh embodiment of the present invention. In comparison with fig. 16B, the thickness of the (first) light blocking layer 23A of the embodiment shown in fig. 16C is smaller than that of the light guiding layer 25. In addition, regions where the (first) light blocking layer 23A and the light guide layer 25 are adjacent overlap each other partially, and the (first) light blocking layer 23A is partially covered with the light guide layer 25.
Fig. 16D shows another top view of a bottom-emission micro led display 1600 according to a seventh embodiment of the invention. A connecting structure 26 is contained within each light emitting region 24. According to one of the features of the present embodiment, the pattern of the connecting structures 26 corresponding to each of the micro-leds 22 in the light-emitting area 24 is the same, and each of the light-emitting areas 24 has the same pattern of connecting structures 26. Since the patterns of the connecting structures 26 corresponding to each micro led 22 in the light emitting region 24 of the present embodiment are the same, and the patterns of the connecting structures 26 in each light emitting region 24 are also the same, the problem of non-uniform display can be avoided.
Fig. 17A is a top view and fig. 17B is a cross-sectional view of a bottom-emission micro-led display 1700 according to an eighth embodiment of the present invention. In the present embodiment, a plurality of micro-leds 22, such as a red micro-led 22R, a green micro-led 22G and a blue micro-led 22B, are disposed on the top surface of the (first) main substrate 21A. Each micro-led 22 has a corresponding light-emitting area 24. The present embodiment includes a frame-shaped first photoresist layer 23A surrounding the light emitting region 24 and disposed on the top surface of the (first) main substrate 21A. The present embodiment further includes a blocking substrate 27 located below the (first) main substrate 21A. The second light blocking layer 23B is formed on the top surface of the blocking substrate 27, covering the light emitting region 24 and the region other than the first light blocking layer 23A. The regions adjacent to the first light blocking layer 23A and the second light blocking layer 23B partially overlap each other. Therefore, the opening (aperture) inner diameter d1 of the first light blocking layer 23A is different from (e.g., smaller than) the opening inner diameter d2 of the second light blocking layer 23B. In another embodiment, the inner diameter of the opening of the first light blocking layer 23A may be larger than the inner diameter of the opening of the second light blocking layer 23B. The first photoresist layer 23A and the second photoresist layer 23B of the present embodiment can be Black Matrixes (BM), and the blocking substrate 27 can be a transparent material, such as quartz, glass or plastic.
In the light emitting region 24, a light guiding layer 25 is formed, which includes a light guiding material for expanding the light generated by the micro light emitting diodes 22. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24.
In the present embodiment, the thickness of the first light blocking layer 23A is greater than the thickness of the light guiding layer 25. In addition, the thickness of the light guiding layer 25 may be larger than that of the micro light emitting diode 22, as shown in fig. 17B. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro-leds 22.
Fig. 17C is a cross-sectional view of a bottom-emission micro-led display 1700 according to an eighth embodiment of the present invention. In comparison with fig. 17B, the thickness of the first light blocking layer 23A in the embodiment shown in fig. 17C is smaller than that of the light guiding layer 25. Further, the first light blocking layer 23A is covered with the light guiding layer 25.
According to one feature of the present embodiment, the pattern of the connection structures (not shown) in each light-emitting region 24 is the same. Since the present embodiment has the same pattern of connection structures in each light emitting region 24, the problem of non-uniform display can be avoided.
Fig. 18A is a top view and fig. 18B is a cross-sectional view of a bottom-emission micro-led display 1800 according to a ninth embodiment of the invention. The ninth embodiment is similar to the eighth embodiment except that the first and second light blocking layers 23A and 23B of the ninth embodiment are disposed between adjacent pixels (instead of between adjacent micro-leds 22) to avoid mutual interference (e.g., color mixing) between adjacent pixels and improve contrast.
In the present embodiment, each pixel (which includes the red micro led 22R, the green micro led 22G and the blue micro led 22B) has a corresponding light-emitting area 24. The present embodiment includes a frame-shaped first photoresist layer 23A surrounding the light emitting region 24 and disposed on the top surface of the (first) main substrate 21A. The present embodiment further includes a second photoresist layer 23B formed on the top surface of the blocking substrate 27 to cover the light emitting region 24 and the region except the first photoresist layer 23A. The first light blocking layer 23A and the second light blocking layer 23B are adjacent to each other, and partially overlap each other. Therefore, the opening inner diameter d1 of the first light blocking layer 23A is different from (e.g., smaller than) the opening inner diameter d2 of the second light blocking layer 23B. The first photoresist layer 23A and the second photoresist layer 23B of the present embodiment can be Black Matrixes (BM), and the blocking substrate 27 can be a transparent material, such as quartz, glass or plastic.
In the light emitting region 24, a light guiding layer 25 is formed, which includes a light guiding material for expanding the light generated by the micro light emitting diodes 22. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24.
In the present embodiment, the thickness of the first light blocking layer 23A is greater than the thickness of the light guiding layer 25. In addition, the thickness of the light guiding layer 25 may be larger than that of the micro light emitting diode 22, as shown in fig. 18B. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro-leds 22.
Fig. 18C shows a cross-sectional view of a bottom-emission type micro led display 1800 according to a modified ninth embodiment of the present invention. In comparison with fig. 18B, the thickness of the first light blocking layer 23A in the embodiment shown in fig. 18C is smaller than that of the light guiding layer 25. Further, the first light blocking layer 23A is partially covered with the light guiding layer 25.
According to one feature of the present embodiment, the pattern of the connecting structure (not shown) corresponding to each micro led 22 in the light emitting region 24 is the same, and each light emitting region 24 has the same connecting structure pattern. Since the patterns of the connection structures corresponding to each micro led 22 in the light emitting region 24 are the same, and the patterns of the connection structures of each light emitting region 24 are also the same, the problem of non-uniform display can be avoided.
Fig. 19 shows a cross-sectional view of a bottom-emission type micro-led display 1900 according to a tenth embodiment of the present invention. In the present embodiment, the bottom emission micro led display 1900 includes a first main substrate 21A and a second main substrate 21B, which are located at the same horizontal plane and respectively correspond to the respective micro led display panels. First light blocking layers 23A are provided on the top surfaces of the first main substrate 21A and the second main substrate 21B, respectively. Similar to the structure of the ninth embodiment, the bottom emission type micro led display 1900 includes a second light blocking layer 23B formed on the top surface of the blocking substrate 27 to cover the light emitting region 24 and the region except the first light blocking layer 23A. As shown in fig. 19, the first master substrate 21A and the second master substrate 21B correspond to the same blocking substrate 27, and the first light blocking layer 23A of the first master substrate 21A and the first light blocking layer 23A of the second master substrate 21B correspond to the same second light blocking layer 23B at the vicinity of the first master substrate 21A and the second master substrate 21B. Thus, a plurality of micro led display panels may be bonded (tilting) together to form a seamless (seamless) bottom emission micro led display 1900.
FIGS. 20A-26B illustrate an embodiment of the present invention
The top view and the cross-sectional view of each process step of forming the bottom-emitting micro-LED display. As shown in fig. 20A and 20B, a (first) main substrate 21A is first provided, which defines a light emitting region 24. As shown in fig. 21A and 21B, a plurality of connection structures 26 are formed. The patterns of the connecting structures 26 are the same, and each light emitting area 24 has the same pattern of connecting structures 26. Thereby, the problem of uneven display can be avoided.
As shown in fig. 22A and 22B, a plurality of micro-leds 22, such as a red micro-led 22R, a green micro-led 22G and a blue micro-led 22B, are disposed on the top surface of the connection structure 26 by using a bonding (bonding) technique. As shown in fig. 23A and 23B, a (first) light blocking layer 23A is formed in the region outside the light emitting region 24 to prevent mutual interference (e.g., color mixing) between adjacent pixels and improve contrast.
As shown in fig. 24A and 24B, a light guiding layer 25 is formed in the light emitting region 24 to expand the light generated by the micro light emitting diode 22. In the present embodiment, the light guiding layer 25 is formed entirely in the light emitting region 24. The thickness of light guiding layer 25 may be greater than the thickness of micro-leds 22, as shown in fig. 24B. However, in other embodiments, the thickness of the light guiding layer 25 may be less than or equal to the thickness of the micro-leds 22. It is noted that the steps of forming the (first) light blocking layer 23A (fig. 23A and 23B) and the steps of forming the light guiding layer 25 (fig. 24A and 24B) may be interchanged.
As shown in fig. 25A and 25B, contact holes (contact holes) are formed on the top surfaces of the micro-leds 22. Next, as shown in fig. 26A and 26B, a top common electrode (top common electrode) layer 28 is formed on the light guide layer 25. According to one feature of an embodiment of the present invention, the top common electrode layer 28 covers the entire light emitting region 24 to avoid non-uniform display.
Fig. 27 is a cross-sectional view showing a bottom emission type micro led display 2000 according to an eleventh embodiment of the present invention. Compared to the embodiment shown in fig. 19, the bottom emission type micro led display 2000 of the present embodiment further includes at least one shielding layer 30 for shielding Electromagnetic Interference (EMI). In one embodiment, the shielding layer 30 may be a transparent conductive material, such as transparent conductive oxides (transparent conductive oxides), which may be Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Aluminum Zinc Oxide (AZO), or the like.
The mask layer 30 may be disposed between the upper surface of the first host substrate 21A and the first photoresist layer 23A, electrically isolated from the top common electrode layer 28 by the insulating layer 29, and electrically isolated from the connection structure 26 by the insulating layer 31. Similarly, the shielding layer 30 may be disposed between the upper surface of the second host substrate 21B and the first photoresist layer 23A, electrically isolated from the top common electrode layer 28 by the insulating layer 29, and electrically isolated from the connection structure 26 by the insulating layer 31. The shielding layer 30 may also be provided between the upper surface of the blocking substrate 27 and the second light blocking layer 23B. In general, the masking layer 30 may be disposed in one or more of the three locations described above.
The shielding layer 30 may also be applied to a top emission type micro light emitting diode display. Fig. 28 shows a cross-sectional view of a top-emission micro-led display 2100 according to a twelfth embodiment of the present invention. Compared to the embodiment shown in fig. 6, the top-emission micro led display 2100 of the present embodiment further includes at least one shielding layer 30 for shielding electromagnetic interference (EMI). In one embodiment, the shielding layer 30 may be a transparent conductive material, such as a transparent conductive oxide, which may be Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Aluminum Zinc Oxide (AZO), or the like. In the present embodiment, the shielding layer 30 may be disposed between the lower surface of the blocking substrate 27 and the second light blocking layer 23B.
Fig. 29 is a cross-sectional view showing a bottom emission type micro light emitting diode display 2900 according to a thirteenth embodiment of the present invention. Compared to the sixth embodiment shown in fig. 15B, the present embodiment further includes an anti-flood layer 32 disposed on the bottom surface of the first main substrate 21A and located between the adjacent micro-leds 22, i.e., on the other side of the (first) photoresist layer 23A corresponding to the first main substrate 21A. Fig. 30 is a cross-sectional view showing a bottom emission type micro light emitting diode display 2900 according to a modified thirteenth embodiment of the present invention. Compared to the sixth embodiment shown in fig. 15C, the present embodiment further includes a flood-proof layer 32 disposed on the bottom surface of the first main substrate 21A and located between the adjacent micro-leds 22, i.e., on the other side of the (first) light blocking layer 23A corresponding to the first main substrate 21A.
After entering the first main substrate 21A, part of the light generated by the micro-leds 22 penetrates the first main substrate 21A, and part of the light is laterally diffused along the first main substrate 21A due to the total reflection effect, thereby interfering with the adjacent micro-leds 22 or pixels, which causes a flood (flood light) problem. The floodlight-preventing layer 32 of the present embodiment can absorb light rays diffused in the transverse direction, and effectively prevent the floodlight problem.
The anti-flooding layer 32 of the present embodiment may include a Black Matrix (BM). In one example, a chrome/chrome oxide film is first formed, and then a photo etching (photo etching) technique is used to form a black matrix of the anti-blooming layer 32. In another example, a black resin (black resin) is first formed, and then a photo process and a curing process are used to form a black matrix of the anti-blooming layer 32. In yet another example, an ink-jet printing (ink-jet printing) technique and a curing process are used to form the black matrix of the anti-blooming layer 32. The flood-proof layer 32 may be formed on the surface of the first main substrate 21A, or formed on another substrate and then attached to the surface of the first main substrate 21A.
The flood resistant layer 32 is disposed between adjacent micro-leds 22, however, the flood resistant layer 32 may be disposed between adjacent pixels. Fig. 31 is a cross-sectional view of a bottom emission type micro led display 3100 according to a fourteenth embodiment of the present invention. Compared to the seventh embodiment shown in FIG. 16B, the embodiment further includes a flood-proof layer 32 disposed on the bottom surface of the first main substrate 21A and between adjacent pixels, i.e., on the other side of the (first) light blocking layer 23A corresponding to the first main substrate 21A. Fig. 32 is a cross-sectional view of a bottom-emission type micro led display 3100 according to a fourteenth modification of the present invention. Compared to the seventh embodiment shown in fig. 16C, the embodiment further includes a flood-proof layer 32 disposed on the bottom surface of the first main substrate 21A and between adjacent pixels, i.e., on the other side of the (first) light-blocking layer 23A corresponding to the first main substrate 21A.
Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (68)

1. A top emission micro-led display, comprising:
a first main substrate;
a bottom common electrode layer disposed on the top surface of the first main substrate;
a plurality of micro light emitting diodes arranged on the bottom common electrode layer;
the first light resistance fault layer is arranged above the bottom common electrode layer to define a plurality of light emitting areas;
the light guide layer is arranged in the light emitting areas; and
and the connecting structures are arranged in the light emitting areas and are respectively and electrically connected with the micro light emitting diodes.
2. The top-emission micro-led display of claim 1, wherein the connecting structures have the same pattern.
3. The top-emission micro-led display of claim 1, wherein the connecting structures comprise a transparent material.
4. The top-emission micro-led display of claim 1, wherein the connecting structures comprise non-transparent material.
5. The top-emission micro-led display of claim 1, wherein the first photo-resist layer is a black matrix.
6. The top-emission micro-led display of claim 1, wherein the first photoresist layer has a thickness greater than a thickness of the light guiding layer.
7. The top-emission micro-led display of claim 1, wherein the first photoresist layer has a thickness less than the thickness of the light guiding layer, the first photoresist layer partially overlaps the light guiding layer in an area adjacent to the light guiding layer, and the first photoresist layer is partially covered by the light guiding layer.
8. The top-emission micro-led display of claim 1, wherein each of the light-emitting areas corresponds to a micro-led.
9. The top-emission micro-led display of claim 1, wherein each of the light-emitting areas corresponds to one red micro-led, one green micro-led and one blue micro-led.
10. The top-emission micro led display of claim 1, wherein the red, green and blue micro leds in the light-emitting area correspond to the same pattern of connecting structures, respectively.
11. The top-emission micro-led display of claim 1, wherein the connecting structure is formed entirely within the light-emitting area.
12. The top-emission micro-led display of claim 1, further comprising:
a blocking substrate located above the first main substrate and the first photoresist layer; and
a second light resistance fault layer formed on the bottom surface of the blocking substrate, wherein the second light resistance fault layer covers the light emitting area and the area except the first light resistance fault layer;
wherein the first photoresist layer has a frame shape to surround the light emitting region, and the adjacent regions of the first photoresist layer and the second photoresist layer are partially overlapped with each other.
13. The top-emission micro-led display of claim 12, wherein the inner diameter of the opening of the first photoresist layer is different from the inner diameter of the opening of the second photoresist layer.
14. The top-emission micro-led display of claim 12, wherein the second photoresist layer is a black matrix.
15. The top-emission micro-led display of claim 12, wherein the blocking substrate comprises a light transmissive material.
16. The top-emission micro-led display of claim 12, further comprising:
the second main substrate is positioned on the same horizontal plane with the first main substrate and respectively corresponds to the respective micro light-emitting diode display panels, and first light resistance faults are respectively arranged on the first main substrate and the second main substrate;
the first main substrate and the second main substrate correspond to the same blocking substrate, and the first light resistance fault layer of the first main substrate and the first light resistance fault layer of the second main substrate correspond to the same second light resistance fault layer at the adjacent position of the first main substrate and the second main substrate.
17. The top-emission micro-led display of claim 12, further comprising a shielding layer disposed between the blocking substrate and the second photoresist layer for shielding electromagnetic interference.
18. The top-emission micro-led display of claim 17, wherein the shielding layer comprises a transparent conductive material.
19. The top-emission micro-led display of claim 1, wherein the micro-leds are rectangular and arranged in vertical columns.
20. A method of forming a top emission micro-led display, comprising:
providing a first main substrate;
forming a plurality of micro light emitting diodes on the first main substrate;
forming a first photoresist layer over the first host substrate to define a plurality of light emitting areas;
forming a light guide layer in the light emitting areas; and
and forming a plurality of connecting structures in the light emitting areas and electrically connecting the connecting structures with the micro light emitting diodes respectively.
21. The method of claim 20, wherein the connecting structures have the same pattern.
22. The method of claim 20, wherein said connecting structures comprise a transparent material.
23. The method of claim 20, wherein said connecting structures comprise a non-transparent material.
24. The method of claim 20, wherein prior to forming the micro-leds, a conductive layer is further formed over the surface of the first host substrate within the plurality of light-emitting areas.
25. The method of claim 20, further comprising forming contact holes on top surfaces of the micro-leds before forming the connecting structures.
26. The method of claim 20, wherein the first photoresist layer is a black matrix.
27. The method as claimed in claim 20, wherein the red, green and blue micro-leds in the light-emitting area correspond to the same pattern of connecting structures.
28. The method of claim 20, wherein forming the first photoresist layer comprises:
forming a black resin; and
the black resin is processed using an optical process and a curing process to form a black matrix photoresist layer.
29. The method of claim 20, wherein forming the first photoresist layer comprises:
the black matrix photoresist layer is formed using an inkjet printing technique and a curing process.
30. The method of claim 20, wherein forming the first photoresist layer comprises:
forming a chromium/chromium oxide film; and
the chromium/chromium oxide film is processed using a photolithography technique to form a black matrix photoresist layer.
31. A bottom emission micro-led display, comprising:
a first main substrate;
a plurality of micro light emitting diodes arranged on the first main substrate;
a first photoresist layer disposed above the first host substrate to define a plurality of light emitting areas;
the light guide layer is arranged in the light emitting areas;
the connecting structures are arranged in the light emitting areas and are respectively and electrically connected with the micro light emitting diodes; and
and the top common electrode layer is arranged on the first light resistance fault layer and the top surfaces of the micro light-emitting diodes.
32. The bottom-emission micro led display of claim 31, wherein the connecting structures have the same pattern.
33. The bottom-emission micro led display of claim 31, wherein the connecting structures comprise a transparent material.
34. The bottom-emission micro led display of claim 31, wherein the connecting structures comprise non-transparent material.
35. The bottom-emission micro-led display of claim 31, wherein the first light blocking layer is a black matrix.
36. The bottom-emission micro led display of claim 31, wherein the first photoresist layer has a thickness greater than a thickness of the light guiding layer.
37. The bottom-emission micro led display of claim 31, wherein the first photoresist layer has a thickness smaller than that of the light guiding layer, the first photoresist layer partially overlaps with the light guiding layer in a region adjacent to the light guiding layer, and the first photoresist layer is partially covered by the light guiding layer.
38. The bottom-emission micro-led display of claim 31, wherein each of the light-emitting areas corresponds to a micro-led.
39. The bottom-emission micro-led display of claim 31, wherein each of the light-emitting areas corresponds to one red micro-led, one green micro-led and one blue micro-led.
40. The bottom-emission micro led display device of claim 31, wherein the red micro leds, the green micro leds and the blue micro leds in the light-emitting area respectively correspond to the same pattern of connecting structures.
41. The bottom-emission micro led display of claim 31, wherein the connecting structure is formed entirely within the light-emitting area.
42. The bottom-emission micro led display of claim 31, further comprising a shielding layer disposed between the first main substrate and the first photoresist layer for shielding electromagnetic interference.
43. The bottom-emission micro-led display of claim 42, wherein said shielding layer comprises a transparent conductive material.
44. The bottom-emission micro-led display of claim 31, further comprising:
a blocking substrate positioned below the first main substrate; and
a second light resistance fault layer formed on the top surface of the blocking substrate, wherein the second light resistance fault layer covers the light emitting area and the area except the first light resistance fault layer;
wherein the first photoresist layer has a frame shape to surround the light emitting region, and the adjacent regions of the first photoresist layer and the second photoresist layer are partially overlapped with each other.
45. The bottom-emission micro-led display of claim 44, wherein an inner diameter of an opening of the first photoresist layer is different from an inner diameter of an opening of the second photoresist layer.
46. The bottom-emission micro-led display of claim 44, wherein the second photoresist layer is a black matrix.
47. The bottom-emission micro-led display of claim 44, wherein the blocking substrate comprises a light transmissive material.
48. The bottom-emission micro-led display of claim 44, further comprising a shielding layer disposed between said blocking substrate and said second photoresist layer for shielding electromagnetic interference.
49. The bottom-emission micro-led display of claim 48, wherein said shielding layer comprises a transparent conductive material.
50. The bottom-emission micro-led display of claim 44, further comprising:
the second main substrate is positioned on the same horizontal plane with the first main substrate and respectively corresponds to the respective micro light-emitting diode display panels, and first light resistance faults are respectively arranged on the first main substrate and the second main substrate;
the first main substrate and the second main substrate correspond to the same blocking substrate, and the first light resistance fault layer of the first main substrate and the first light resistance fault layer of the second main substrate correspond to the same second light resistance fault layer at the adjacent position of the first main substrate and the second main substrate.
51. The bottom-emission micro LED display as claimed in claim 50, further comprising a shielding layer disposed between the second main substrate and the first photo-resist layer for shielding EMI.
52. The bottom-emission micro led display of claim 51, wherein the shielding layer comprises a transparent conductive material.
53. The bottom-emission micro led display of claim 31, wherein the micro leds are rectangular and arranged in vertical columns.
54. The bottom-emission micro led display of claim 31, further comprising an anti-blooming layer disposed on the bottom surface of the first host substrate and between adjacent micro leds or pixels.
55. The bottom-emission micro-led display of claim 54, wherein the anti-blooming layer is disposed on the other side of the first photoresist layer corresponding to the first main substrate.
56. The bottom-emission micro-led display of claim 54, wherein the anti-blooming layer comprises a black matrix.
57. The bottom-emission micro led display of claim 56, wherein the black matrix comprises chrome/chrome oxide, black resin, or ink-jet.
58. A method of forming a bottom emission micro-led display, comprising:
providing a first main substrate;
forming a plurality of connecting structures in the plurality of light emitting areas;
forming a plurality of micro light emitting diodes electrically connected to the connecting structures;
forming a first photoresist layer on the first main substrate to define the light-emitting regions covering the connection structures; and
forming a light guide layer in the light emitting areas.
59. The method of claim 58, wherein the connecting structures have the same pattern.
60. The method of claim 58, wherein said connecting structures comprise a transparent material.
61. The method of claim 58, wherein said connecting structures comprise a non-transparent material.
62. The method of claim 58, wherein after forming the light guiding layer or the first photoresist layer, a conductive layer is further formed on the entire surface of the first substrate within the plurality of light emitting areas.
63. The method of claim 58, further comprising forming contact holes on top surfaces of the micro-LEDs before forming the conductive layer.
64. The method of claim 58, wherein the first photoresist layer is a black matrix.
65. The method as claimed in claim 58, wherein the red, green and blue micro-LEDs in the light-emitting area correspond to the same pattern of connecting structures.
66. The method of claim 58, wherein the step of forming the first photoresist layer comprises:
forming a black resin; and
the black resin is processed using an optical process and a curing process to form a black matrix photoresist layer.
67. The method of claim 58, wherein the step of forming the first photoresist layer comprises:
the black matrix photoresist layer is formed using an inkjet printing technique and a curing process.
68. The method of claim 58, wherein the step of forming the first photoresist layer comprises:
forming a chromium/chromium oxide film; and
the chromium/chromium oxide film is processed using a photolithography technique to form a black matrix photoresist layer.
CN201811027497.0A 2018-09-04 2018-09-04 Top and bottom emission type micro-LED display and method for forming the same Pending CN110875346A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811027497.0A CN110875346A (en) 2018-09-04 2018-09-04 Top and bottom emission type micro-LED display and method for forming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811027497.0A CN110875346A (en) 2018-09-04 2018-09-04 Top and bottom emission type micro-LED display and method for forming the same

Publications (1)

Publication Number Publication Date
CN110875346A true CN110875346A (en) 2020-03-10

Family

ID=69716940

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811027497.0A Pending CN110875346A (en) 2018-09-04 2018-09-04 Top and bottom emission type micro-LED display and method for forming the same

Country Status (1)

Country Link
CN (1) CN110875346A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111370547A (en) * 2020-03-14 2020-07-03 厦门友来微电子有限公司 Micro LED chip without optical crosstalk
CN112786577A (en) * 2020-08-24 2021-05-11 錼创显示科技股份有限公司 Display device and method for manufacturing the same
WO2023070369A1 (en) * 2021-10-27 2023-05-04 重庆康佳光电技术研究院有限公司 Micro light-emitting diode display and manufacturing method therefor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101267700A (en) * 2007-03-15 2008-09-17 索尼株式会社 Display apparatus and electronic device
CN102324462A (en) * 2006-10-12 2012-01-18 凯博瑞奥斯技术公司 Transparent conductor and application thereof based on nano wire
US20170069794A1 (en) * 2015-09-03 2017-03-09 Ki Seok Kim Semiconductor light emitting device and method of manufacturing same
CN107871454A (en) * 2016-09-26 2018-04-03 启端光电股份有限公司 micro light emitting diode display panel
TW201814880A (en) * 2016-09-26 2018-04-16 啟端光電股份有限公司 Top emission microLED display and bottom emission microLED display and a method of forming the same
CN108319070A (en) * 2018-03-30 2018-07-24 京东方科技集团股份有限公司 A kind of display device and its display methods

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102324462A (en) * 2006-10-12 2012-01-18 凯博瑞奥斯技术公司 Transparent conductor and application thereof based on nano wire
CN101267700A (en) * 2007-03-15 2008-09-17 索尼株式会社 Display apparatus and electronic device
US20170069794A1 (en) * 2015-09-03 2017-03-09 Ki Seok Kim Semiconductor light emitting device and method of manufacturing same
CN107871454A (en) * 2016-09-26 2018-04-03 启端光电股份有限公司 micro light emitting diode display panel
TW201814880A (en) * 2016-09-26 2018-04-16 啟端光電股份有限公司 Top emission microLED display and bottom emission microLED display and a method of forming the same
CN108319070A (en) * 2018-03-30 2018-07-24 京东方科技集团股份有限公司 A kind of display device and its display methods

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111370547A (en) * 2020-03-14 2020-07-03 厦门友来微电子有限公司 Micro LED chip without optical crosstalk
CN111370547B (en) * 2020-03-14 2021-03-26 厦门友来微电子有限公司 Micro LED chip without optical crosstalk
CN112786577A (en) * 2020-08-24 2021-05-11 錼创显示科技股份有限公司 Display device and method for manufacturing the same
WO2023070369A1 (en) * 2021-10-27 2023-05-04 重庆康佳光电技术研究院有限公司 Micro light-emitting diode display and manufacturing method therefor

Similar Documents

Publication Publication Date Title
US9741775B2 (en) Display device
US11011574B2 (en) Top emission microLED display and bottom emission microLED display and a method of forming the same
KR100717269B1 (en) Display device and manufacturing method of the same
JP6151136B2 (en) Organic electroluminescence display device
US10749143B2 (en) Organic light emitting diode panel
KR101727789B1 (en) Light source and display device using the same
TW201814880A (en) Top emission microLED display and bottom emission microLED display and a method of forming the same
KR20170032189A (en) Display device
CN107403818B (en) Display device
KR20150051463A (en) Organic light emitting diode display
EP3316332B1 (en) Display device having a white emitting area
CN110875346A (en) Top and bottom emission type micro-LED display and method for forming the same
US9111889B2 (en) Display device
TWI650855B (en) Top emission microled display and bottom emission microled display and a method of forming the same
US20240049579A1 (en) Display panel
JP6938323B2 (en) Display device
KR20240040698A (en) Display device and method of manufacturing the same
CN111081685B (en) Display device
KR20180077856A (en) Electroluminescent Display Device
CN218158982U (en) Touch structure, touch display panel and display device
CN113097405B (en) Luminous display panel
TWI685829B (en) Display device
US20230057673A1 (en) Display device
US20220181385A1 (en) Display device
KR20220169074A (en) A Light Emitting Device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20200310