CN111580193A - Ultrathin film-coated optical wafer and preparation method thereof - Google Patents
Ultrathin film-coated optical wafer and preparation method thereof Download PDFInfo
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- CN111580193A CN111580193A CN202010514934.2A CN202010514934A CN111580193A CN 111580193 A CN111580193 A CN 111580193A CN 202010514934 A CN202010514934 A CN 202010514934A CN 111580193 A CN111580193 A CN 111580193A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
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Abstract
The invention provides an ultrathin film-coated optical wafer and a preparation method thereof, wherein the optical wafer comprises an ultrathin optical wafer and optical films plated on two surfaces of the ultrathin optical wafer; the optical thin films are plated on the two surfaces of the ultrathin optical wafer to form the ultrathin film-plated optical wafer, so that the requirement on the transmittance characteristic of the IR cut-off film can be reduced, and the film-forming time is shortened; and thinning the thickness of the film layer with the single-sided coating. The preparation method of the optical wafer comprises the steps of coating one or more layers of optical films on two surfaces of the ultrathin optical wafer to obtain the ultrathin coated optical wafer, wherein the optical films on the two surfaces have different light splitting properties, the films with different light splitting properties are mutually compensated, and the same or similar films are designed and superposed to achieve the total light splitting property of the films.
Description
Technical Field
The invention relates to the technical field of optical film design and plating, in particular to an ultrathin film-coated optical wafer and a preparation method thereof.
Background
Optical film plating refers to a process of plating one or more layers of metal films or dielectric films on the surface of an optical wafer. The purpose of coating the film on the surface of the optical wafer is to meet the requirements of reducing or increasing the reflection, beam splitting, color separation, light filtering, polarization and the like of light.
At present, the process of plating an optical film on an ultrathin optical wafer is to plate an optical film on one surface of the ultrathin wafer to obtain the ultrathin film-plated optical wafer, but the plating method has very high requirements on the characteristics of the optical film. Taking the IR cut-off film as an example, the IR cut-off film is an optical thin film that prevents the infrared band from transmitting, and the plated IR cut-off film is required by an optical imaging product including an optical wafer, and it is not necessary to image light in the near-infrared band through an optical system, that is, only visible light imaging is required.
As shown in FIG. 1, if only one side of the ultra-thin optical wafer is plated with the IR cut-off film, not only the IR cut-off film has high requirements on the IR cut-off rate, such as high transmittance at 380-630 nm, high cut-off rate at 650-1200 nm, specifically, transmittance at the infrared band of 650-1200 nm is lower than 0.01%, the film layer design is difficult, but also the IR cut-off film on one side is thick, the film forming time is long, and after the plating is completed, the wafer is easy to warp too much, which may cause wafer breakage and further affect the subsequent processes. In addition, the red light of the single-side IR cut-off film is reflected too much, which causes the visual red color of the film layer, and further the product requirement cannot be met.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides the ultrathin film-coated optical wafer and the preparation method thereof, the film design is simple, and the warping of the ultrathin optical wafer can be reduced or eliminated.
The invention is realized by the following technical scheme:
an ultrathin film-coated optical wafer comprises an ultrathin optical wafer and optical films coated on two surfaces of the ultrathin optical wafer.
Preferably, the optical film is an IR cut film.
Preferably, the average transmittance of the ultrathin film optical wafer in a visible light wave band of 380 nm-630 nm is not less than 90%.
Preferably, the average transmittance of the ultrathin film-coated optical wafer in visible light and near infrared bands of 650-1200 nm is less than or equal to 0.01 percent.
Preferably, the thickness difference of the optical film on two surfaces of the ultrathin optical wafer is within 1 um.
A preparation method of an ultrathin film-coated optical wafer comprises the steps of coating one or more layers of optical films on two surfaces of the ultrathin optical wafer to obtain the ultrathin film-coated optical wafer.
Further, one surface of the ultrathin optical wafer is plated with one or a plurality of optical films, the ultrathin optical wafer is cleaned or turned over in a vacuum environment after the plating is finished, and then one or a plurality of optical films are plated on the other surface of the ultrathin optical wafer to obtain the ultrathin film-plated optical wafer.
Further, plating of optical films is started simultaneously on both surfaces of the ultra-thin optical wafer.
Further, after the optical films are plated on the two surfaces of the ultrathin optical wafer, the thickness difference of the optical films on the two surfaces of the ultrathin optical wafer is within 1 um.
Further, plating 10-100 layers of optical films on two surfaces of the ultrathin optical wafer.
Compared with the prior art, the invention has the following beneficial technical effects:
according to the ultrathin film-coated optical wafer, the optical films are coated on the two surfaces of the ultrathin optical wafer to form the ultrathin film-coated optical wafer, so that the requirement on the transmittance characteristic of an IR cut film can be reduced, and the film-forming time is shortened; thinning the thickness of the film layer with the single-sided coating film; the transmittance of white light or other high-transmittance-required wave bands is increased, because the film system design can design the high-transmittance-required white light wave bands or other high-transmittance-required wave bands into high transmittance, and the effect is the effect of an anti-reflection film when plating is carried out; the coating thickness of each surface film layer of the wafer is reduced, because the IR film is coated on one surface, a certain cut-off rate needs to be achieved, the film system design is complex, and the thickness of the film layer to be coated can be changed according to the complexity of the film system; because the stress of the ultrathin wafer is balanced, the warping of all wafers, particularly the ultrathin wafer, can be reduced or eliminated, and the light splitting effect of the two film layers can reduce the red light reflection phenomenon of the optical part after the IR cut film is plated.
The invention relates to a preparation method of an ultrathin coated optical wafer, which can finish the preparation of the ultrathin coated optical wafer by coating one or a plurality of optical films on two surfaces of the ultrathin optical wafer, wherein the optical films are coated on two surfaces of the ultrathin optical wafer, the optical films on the two surfaces have different light splitting properties, the films with different light splitting properties are mutually compensated, and the same or similar films are designed and superposed, so that the total light splitting property of the films can be achieved.
Drawings
FIG. 1 is a schematic diagram of a prior art IR cut film plating on an ultra-thin wafer.
FIG. 2 is a schematic diagram of a plating method of an ultra-thin optical film wafer according to the present invention.
FIG. 3 is a diagram of an ultra-thin wafer optical film according to the present invention.
Detailed Description
The present invention will now be described in further detail with reference to specific examples, which are intended to be illustrative, but not limiting, of the invention.
As shown in fig. 2, the present invention designs an ultra-thin coated optical wafer, in which optical thin films are coated on two surfaces of the ultra-thin optical wafer, and the following example is an IR cut film.
In the case of example 1, the following examples were conducted,
the overall spectral specifications of the two sides of the optical film are as follows: 380 nm-630 nm, and the average transmittance is more than or equal to 90 percent; 650-1200 nm and average transmittance less than or equal to 0.01 percent.
For convenience of description, two surfaces of the ultra-thin optical wafer are distinguished, and the upward surface is referred to as an upper surface, and the downward surface is referred to as a lower surface.
First, an R1 film is coated on the lower surface of the ultra-thin optical wafer.
The wave band which needs to transmit visible light has high transmittance, the average transmittance of 650nm-1200nm is less than or equal to 0.01 percent, and partial wavelength cut-off is realized.
The specification of the spectral characteristics is as follows,
the wave band which needs to transmit visible light is 380 nm-630 nm, and the average transmittance is more than or equal to 95 percent; a part of near infrared wave band is 650 nm-850 nm, and the average transmittance is less than or equal to 0.01 percent;
next, an R2 film is coated on the top surface of the ultra-thin optical wafer.
The band which needs to transmit visible light has high transmittance, the near infrared band corresponding to the part cut off in R1 is generally transmitted or not completely cut off, and the near infrared part corresponding to the part not completely cut off in R1 is high cut off.
The specification of the spectral characteristics is as follows,
the wave band which needs to transmit visible light is 380 nm-630 nm, and the average transmittance is more than or equal to 95 percent; the corresponding non-cut part of the near infrared wave band in R1 is 850-1200 nm, and the average transmittance is less than or equal to 0.01%.
Finally, the upper and lower films combine the following permeation and blocking effects of R1+ R2.
The wave band needing to transmit the visible light is still a high transmission wave band, and the near infrared cut-off is the superposition cut-off effect after R1+ R2.
The visible light wave band to be transmitted is 380 nm-630 nm, and the average transmittance is more than or equal to 90 percent; the near infrared cut-off wave band is 650nm-1200nm, and the average transmittance is less than or equal to 0.01 percent.
In the case of example 2, the following examples were conducted,
the overall spectral specifications of the two sides of the optical film are as follows: 380 nm-630 nm, and the average transmittance is more than or equal to 90 percent; 650nm-1200nm, and average transmittance less than or equal to 0.01%.
Firstly, an R1 film layer is plated on the lower surface of the ultrathin optical wafer.
The wave band which needs to transmit visible light has high transmittance, the average transmittance of 650nm-1200nm is less than or equal to 0.01 percent, and the cut-off transmittance is less than or equal to 0.5 percent.
The specification of the spectral characteristics is as follows,
the wave band which needs to transmit visible light is 380 nm-630 nm, and the average transmittance is more than or equal to 95 percent; the visible light wave band needing to be cut off is 650nm-1200nm, and the average transmittance is less than or equal to 1 percent;
next, an R2 film is coated on the top surface of the ultra-thin optical wafer.
The wave band needing to transmit visible light has high transmittance, the part corresponding to the cutoff of 630-1200 nm in R1 is cut off, and the near infrared part corresponding to the cutoff of R1 is higher cut off.
The specification of the spectral characteristics is as follows,
the wave band needing to transmit visible light is 380 nm-630 nm, and the average transmittance is more than or equal to 95 percent; the corresponding cut-off part of visible light wave band and part of near infrared wave band in R1 are 650-1200 nm, and the average transmittance is less than or equal to 1%.
Finally, the upper and lower films combine the following permeation and blocking effects of R1+ R2.
The wave band needing to transmit the visible light is still a high transmission wave band, and the near infrared cut-off is the superposition cut-off effect after R1+ R2.
The visible light wave band to be transmitted is 380 nm-630 nm, and the average transmittance is more than or equal to 90 percent; the near infrared cut-off wave band is 650nm-1200nm, and the average transmittance is less than or equal to 0.01 percent.
As described in examples 1 and 2, the IR cut film and the plating method are applicable to all optical parts requiring plating of the IR cut film, especially ultra-thin optical parts, and are only examples, so that the case of plating on the upper surface of an ultra-thin optical wafer first and then plating on the lower surface of the ultra-thin optical wafer is not specifically listed.
The optical films plated on the two sides have equal thickness or the difference of the thicknesses of the film layers is within 1um, so that the stress of the ultrathin wafer is balanced, and the purpose of reducing or eliminating the warping is achieved. The wavelength is only one, the wavelength can be adjusted according to needs, corresponding parameters can be increased or decreased, for example, 390 nm-640 nm, and the average transmittance is more than or equal to 90%; 660 nm-1180 nm, and average transmittance less than or equal to 0.01 percent. The average transmittance of the two surfaces coated with the films can be increased or decreased, can be the same or different, for example, 390 nm-640 nm, and is more than or equal to 92 percent; 660 nm-1180 nm, and average transmittance less than or equal to 0.02%. The "near infrared" mentioned above indicates a specific wavelength band, and in this patent contains a part of visible light.
The invention also carries out plating on the optical film, namely a plating method of the ultrathin optical wafer optical film, which specifically comprises the following modes and steps,
the first mode, specifically comprising the steps of,
step 1, cleaning white ultrathin optical wafer glass by using ultrasonic waves, and drying to obtain a substrate;
step 2, plating 10-100 layers of optical films on the upper surface of the substrate by adopting a physical vapor deposition method; after the plating is finished, ultrasonic cleaning is carried out or the coating is directly turned over in a vacuum environment without cleaning;
and 3, plating an optical film on the lower surface of the substrate by adopting a physical vapor deposition method.
And after the plating is finished, performing subsequent processing or treatment, such as photoetching, impressing and other subsequent processing on the ultrathin wafer subjected to the optical film layer plating.
The second mode, specifically comprising the steps of,
step 1, cleaning white ultrathin optical wafer glass by using ultrasonic waves, and drying to obtain a substrate;
step 2, plating an optical film on the lower surface of the substrate by adopting a physical vapor deposition method; after the plating is finished, ultrasonic cleaning is carried out or the coating is directly turned over in a vacuum environment without cleaning;
and 3, plating an optical film on the upper surface of the substrate by adopting a physical vapor deposition method, and then performing subsequent processing or treatment, such as photoetching, impressing and other subsequent processing on the ultrathin wafer subjected to the optical film plating.
The third mode specifically comprises the following steps,
step 1, cleaning white ultrathin optical wafer glass by using ultrasonic waves, and drying to obtain a substrate;
step 2, plating 10-100 layers of optical films on the lower surface and the upper surface of the substrate simultaneously by adopting a physical vapor deposition method; and after the plating is finished, performing subsequent processing or treatment, such as photoetching, impressing and other subsequent processing on the ultrathin wafer subjected to the optical film layer plating.
The three methods are only one way, and other layers can be plated on one side. The coated wafer needs further processing, such as coating a diaphragm hole film layer thereon, and if the wafer is warped, the positioning tolerance and the overall dimension tolerance of the diaphragm hole are increased. The wafer with all the coated films needs to be provided with other surface shapes by adopting a photoetching and impressing method, if the wafer is warped, the positioning difficulty is increased when the wafer is provided with other surface shapes, and the positioning precision of the surface shapes is also increased. The wafer with the finished surface needs to be cut, and if the wafer is warped, irregular splinters are caused due to overlarge stress during cutting, or the cutting precision is influenced. The sliced wafer needs a further bonding process, and the bonding tightness is affected by the warping. The reduction of wafer warpage has great benefits for subsequent processes such as photolithography imprinting, film pasting, cutting, mounting and the like. The optical film obtained by the invention is shown in FIG. 3, and the result shows that the method can balance the stress after the film coating of the wafer, the warping is greatly reduced, and the optical film has micro warping or no warping, thereby avoiding the problems.
In addition, the following effects are also obtained:
1, the plating thickness of each surface film layer of the wafer is reduced, because a certain cut-off rate needs to be achieved when an IR film is plated on one surface, the film system design is complex, and the thickness of the film layer to be plated can be changed according to the complexity of the film system.
2, the transmittance of white light or other high-transmittance-required wave bands can be increased, because the film system design can design the high-transmittance-required white light wave bands or other high-transmittance-required wave bands, and the effect is the effect of an antireflection film when plating.
3, the invention has the same cut-off wave band and can reduce the IR cut-off rate when the IR cut-off film layer is plated on one side.
4, the IR cut-off rate is greatly increased by the simultaneous action of the double-sided film layers, and the film forming time is shortened by the simultaneous film forming of the double sides.
Claims (10)
1. An ultrathin optical wafer coated with films is characterized by comprising an ultrathin optical wafer and optical films coated on two surfaces of the ultrathin optical wafer.
2. The ultra-thin coated optical wafer of claim 1, wherein the optical thin film is an IR cut-off film.
3. The ultrathin coated optical wafer of claim 1, wherein the average transmittance of the ultrathin coated optical wafer in a visible light band of 380nm to 630nm is not less than 90%.
4. The ultra-thin coated optical wafer of claim 1, wherein the average transmittance of the ultra-thin coated optical wafer in the visible and near infrared bands of 650-1200 nm is less than or equal to 0.01%.
5. The ultra-thin coated optical wafer of claim 1, wherein the difference between the thicknesses of the optical thin film on the two surfaces of the ultra-thin optical wafer is within 1 um.
6. A preparation method of an ultrathin film-coated optical wafer is characterized in that one or more layers of optical films are plated on two surfaces of the ultrathin optical wafer to obtain the ultrathin film-coated optical wafer.
7. The method according to claim 6, wherein the one or more optical films are coated on one surface of the ultra-thin optical wafer, and the ultra-thin optical wafer is obtained by cleaning or turning the wafer in a vacuum environment after the coating is completed, and then the one or more optical films are coated on the other surface of the ultra-thin optical wafer.
8. The method of claim 6, wherein the plating of the optical thin film is started on both surfaces of the ultra-thin optical wafer simultaneously.
9. The method of claim 6, wherein the difference between the thicknesses of the optical films on the two surfaces of the ultra-thin optical wafer is within 1um after the optical films are plated on the two surfaces of the ultra-thin optical wafer.
10. The method of claim 6, wherein 10-100 layers of optical films are coated on both surfaces of the ultra-thin optical wafer.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112230320A (en) * | 2020-11-13 | 2021-01-15 | 光驰科技(上海)有限公司 | Preparation method of optical filter on large-size ultrathin substrate |
| CN113594022A (en) * | 2021-07-26 | 2021-11-02 | 杭州美迪凯光电科技股份有限公司 | Optical coated semiconductor wafer grafting method and optical coated semiconductor |
| CN113584448A (en) * | 2021-07-27 | 2021-11-02 | 华天慧创科技（西安）有限公司 | Optical filter coating method |
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| CN206920637U (en) * | 2017-06-12 | 2018-01-23 | 美德瑞光电科技（上海）有限公司 | A kind of low stress smalt cutoff filter |
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Application publication date: 20200825 |