CN114879283A - Infrared metalized all-through type germanium window piece and preparation method thereof - Google Patents
Infrared metalized all-through type germanium window piece and preparation method thereof Download PDFInfo
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- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 63
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 239000010408 film Substances 0.000 claims abstract description 74
- 239000012788 optical film Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 230000007704 transition Effects 0.000 claims abstract description 13
- 238000001465 metallisation Methods 0.000 claims description 29
- 239000000919 ceramic Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 239000007888 film coating Substances 0.000 claims description 6
- 238000009501 film coating Methods 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 55
- 229910052984 zinc sulfide Inorganic materials 0.000 description 21
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- 229920000742 Cotton Polymers 0.000 description 4
- 230000002745 absorbent Effects 0.000 description 4
- 239000002250 absorbent Substances 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011104 metalized film Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000000411 transmission spectrum Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
- C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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Abstract
The invention provides an infrared metalized full-through type germanium window and a preparation method thereof, wherein the infrared metalized full-through type germanium window comprises a germanium substrate, a metal film, a transition region and an optical film, wherein the metal film, the transition region and the optical film are arranged on the surface of the germanium substrate, the transition region is circumferentially arranged at the outer edge of the optical film, the metal film is circumferentially arranged at the outer edge of the transition region, and the film system structure of the optical film is MLMHM.
Description
Technical Field
The invention belongs to the technical field of optical films, and relates to an infrared metalized all-through germanium window and a preparation method thereof.
Background
In an optical element, an antireflection film is also called as an antireflection film, light energy is lost due to reflection on the surface of the element, and in order to reduce reflection loss on the surface of the element, a transparent dielectric film is often deposited on the surface of the optical element, so that the element achieves the effect of antireflection. The initial antireflection coating is achieved by depositing a single layer of antireflection coating material on the surface of the element, which only can be used for antireflection of electromagnetic waves with a single specific wavelength. In order to realize antireflection in a wider range and at more wavelengths, it can be realized by depositing a multilayer film. With the research experience of antireflection films, more materials capable of being used as antireflection films are found, and due to the development of a coating technology, the application of the antireflection films widely relates to multiple industries such as industry, agriculture, scientific research and the like.
As a high-quality infrared optical material, germanium single crystal is the most popular infrared optical material in the world at present and has the widest application range, and the finished product mainly comprises an infrared germanium lens and a germanium window.
CN103245994A discloses a long-wave infrared filter with 8-8.4 μm transmission and a preparation method thereof, wherein the filter comprises a germanium substrate, a long-wave pass film system on one side of the substrate and a short-wave pass film system on the other side of the substrate; the structure of the long-wave pass membrane system is as follows: (0.5lh 0.5l) ^10(0.57l 1.14h 0.57l) ^6, central wavelength is 5680nm, and the structure of the short wave pass film system is as follows: (lh) ^10, the central wavelength is 10900nm, and l and h are respectively and sequentially a zinc sulfide film layer and a lead telluride film layer.
CN114200552A discloses a germanium-based 8-12 μm infrared band window sheet and a preparation method thereof, wherein the window sheet takes single crystal germanium as a substrate, the front and back surfaces of the substrate are plated with the same infrared antireflection film system structures, and the infrared antireflection film system structures of the front and back surfaces are: substrate/0.281 Ge/0.475ZnSe/0.4641Ge/0.644ZnSe/0.578YbF 3 0.126 ZnS/air.
In the above scheme, the high transmittance wave band of the window is distributed in a concentrated manner in a range of 8 μm to 12 μm, and it is difficult to realize a metallized film layer, which increases the difficulty of welding the window, so it is urgently needed to develop a solution for simultaneously realizing expansion of the window to the infrared transmission wave band and metallization of the periphery of the germanium window.
Disclosure of Invention
The invention aims to provide an infrared metalized full-through germanium window and a preparation method thereof.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the invention provides an infrared metalized all-through germanium window, which comprises a germanium substrate, and a metal film, a transition region and an optical film which are arranged on the surface of the germanium substrate, wherein the transition region is circumferentially arranged at the outer edge of the optical film, the metal film is circumferentially arranged at the outer edge of the transition region, the film system structure of the optical film is MLMHM, wherein M represents a λ 0 A ZnS film layer of optical thickness,/4, L representing a lambda 0 YbF of/4 optical thickness 3 Film layer, H represents a lambda 0 And/4 Ge film layer with optical thickness.
The transition zone of the glazing of the invention is left blank, i.e. no film structure is provided on the substrate.
The optical film has the advantages of fewer structural layers of the film system, simple structure, reduction in the manufacturing cost of a single sheet, realization of expansion of the window to the infrared transmission band, enrichment of the application scene of the window and great widening of the high transmission spectrum band of the infrared germanium window. According to the invention, the periphery of the germanium window is subjected to metallization coating, and the relatively high adhesion can be ensured when the thickness of the metallization coating is relatively thick and relatively thin, so that the metallization quality is ensured while the manufacturing cost is reduced, and the application scenes of the infrared window in the field of chips are enriched.
Preferably, the optical film comprises a first ZnS film layer and a YbF layer which are sequentially stacked 3 The film layer, the second ZnS film layer, the Ge film layer and the third ZnS film layer.
Preferably, the thickness of the first ZnS film layer is 71-74 nm, for example: 71nm, 71.5nm, 72nm, 72.3nm, 73nm, 74nm, etc.
Preferably, the YbF 3 The thickness of the film layer is 542-545 nm, for example: 542nm, 542.5nm, 543nm, 544nm or 545nm, etc.
Preferably, the thickness of the second ZnS film layer is 932-935 nm, for example: 932nm, 932.5nm, 933nm, 934nm or 935 nm.
Preferably, the thickness of the Ge film layer is 174-177 nm, for example: 174nm, 174.5nm, 175nm, 176nm, 177nm, etc.
Preferably, the thickness of the third ZnS film layer is 188-190 nm, for example: 188nm, 188.5nm, 189nm, 189.5nm or 190 nm.
Preferably, the metal film includes a Cr layer, a Ni layer, and an Au layer sequentially disposed from the substrate upward.
In a second aspect, the present invention provides a method for preparing an infrared metalized all-through germanium window piece according to the first aspect, wherein the method for preparing the infrared metalized all-through germanium window piece comprises the following steps:
(1) plating an optical film on a substrate by using germanium as the substrate and adopting a vacuum coating machine, wherein a blank area is arranged at the outer edge of the optical film;
(2) covering the optical film with a ceramic chip, performing metallization film coating in the blank area by adopting a direct current magnetron sputtering method, and stripping the ceramic chip to obtain the infrared metallization all-pass type germanium window.
The invention utilizes the direct current magnetron sputtering technology, carries out radio frequency cleaning on the substrate before gold plating, and simultaneously adopts a three-layer metal film structure to enhance the adhesiveness of the germanium substrate to the metal adhesion layer, so that the metalized film is firmer, the welding difficulty of the metal film layer is reduced, and the utilization rate of the target material is improved, thereby realizing the plating of the low-consumption thick film layer and saving the manufacturing cost on the premise of realizing the design function.
Preferably, the metallization plating film in the step (2) is formed by sequentially plating a Cr layer, a Ni layer and an Au layer from the substrate to the top.
Compared with the prior art, the invention has the following beneficial effects:
(1) the optical film has the advantages of fewer structural layers of the film system, simple structure, reduction in the manufacturing cost of a single sheet, realization of expansion of the window to the infrared transmission band, enrichment of the application scene of the window and great widening of the high transmission spectrum band of the infrared germanium window. According to the invention, the periphery of the germanium window is subjected to metallization coating, and the relatively high adhesion can be ensured when the thickness of the metallization coating is relatively thick and relatively thin, so that the metallization quality is ensured while the manufacturing cost is reduced, and the application scenes of the infrared window in the field of chips are enriched.
(2) The infrared metalized all-through type germanium window piece can realize 97% of average transmittance in a wave band of 7-14 mu m and can realize less than 40% of average transmittance in a wave band of 2-7 mu m.
Drawings
Fig. 1 is a schematic structural diagram of an infrared metalized all-through germanium window in example 1.
FIG. 2 is a schematic diagram of the structure of the optical film of example 1 on a substrate.
Fig. 3 is a transmission spectrum of an infrared metalized all-pass germanium window of example 1.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitation of the present invention.
Example 1
The embodiment provides an infrared metalized all-through type germanium window, and the preparation method of the infrared metalized all-through type germanium window is as follows:
(1) use germanium as the basement, adopt the dust catcher to clear away the impurity in the vacuum chamber, dip in absolute ethyl alcohol with absorbent gauze and clean the inner wall in real empty room, successively adopt anhydrous acetone and absolute ethyl alcohol to carry out microwave supersound 15min to the basement respectively again to clean the basement totally with the cotton wool, adopt vacuum coating machine to plate optical film on the basement, the optical film outer fringe sets up the white district of staying, and the thickness of rete does in proper order:
| number of layers | Film material | Film thickness/nm |
| 1 | ZnS | 72.3 |
| 2 | YbF 3 | 543 |
| 3 | ZnS | 933.6 |
| 4 | Ge | 175.5 |
| 5 | ZnS | 189.1 |
The structure of the optical film on the substrate is schematically shown in FIG. 2;
(2) covering an optical film with a ceramic chip, performing metallization film coating in a blank area by adopting a direct current magnetron sputtering method, sequentially plating a Cr layer, a Ni layer and an Au layer from a substrate to the top, and peeling off the ceramic chip to obtain the infrared metallization all-pass type germanium window, wherein the structural schematic diagram of the infrared metallization all-pass type germanium window is shown in figure 1, and the transmissivity spectrogram of the infrared metallization all-pass type germanium window is shown in figure 3.
Example 2
The embodiment provides an infrared metalized all-through type germanium window, and the preparation method of the infrared metalized all-through type germanium window is as follows:
(1) use germanium as the basement, adopt the dust catcher to clear away the impurity in the vacuum chamber, dip in absolute ethyl alcohol with absorbent gauze and clean the inner wall in real empty room, successively adopt anhydrous acetone and absolute ethyl alcohol to carry out microwave supersound 15min to the basement respectively again to clean the basement totally with the cotton wool, adopt vacuum coating machine to plate optical film on the basement, the optical film outer fringe sets up the white district of staying, and the thickness of rete does in proper order:
| number of layers | Film material | Film thickness/nm |
| 1 | ZnS | 72.8 |
| 2 | YbF 3 | 543.5 |
| 3 | ZnS | 932.9 |
| 4 | Ge | 176 |
| 5 | ZnS | 188.5 |
；
(2) Covering the optical film with a ceramic chip, performing metallization film coating in the blank area by adopting a direct current magnetron sputtering method, sequentially plating a Cr layer, a Ni layer and an Au layer from the substrate to the top, and stripping the ceramic chip to obtain the infrared metallization all-through type germanium window piece.
Example 3
The embodiment provides an infrared metalized all-through type germanium window, and the preparation method of the infrared metalized all-through type germanium window is as follows:
(1) use germanium as the basement, adopt the dust catcher to clear away the impurity in the vacuum chamber, dip in absolute ethyl alcohol with absorbent gauze and clean the inner wall in real empty room, successively adopt anhydrous acetone and absolute ethyl alcohol to carry out microwave supersound 15min to the basement respectively again to clean the basement totally with the cotton wool, adopt vacuum coating machine to plate optical film on the basement, the optical film outer fringe sets up the white district of staying, and the thickness of rete does in proper order:
(2) covering the optical film with a ceramic chip, performing metallization film coating in the blank area by adopting a direct current magnetron sputtering method, sequentially plating a Cr layer, a Ni layer and an Au layer from the substrate to the top, and stripping the ceramic chip to obtain the infrared metallization all-through type germanium window piece.
Example 4
The embodiment provides an infrared metalized all-through type germanium window, and the preparation method of the infrared metalized all-through type germanium window is as follows:
(1) use germanium as the basement, adopt the dust catcher to clear away the impurity in the vacuum chamber, dip in absolute ethyl alcohol with absorbent gauze and clean the inner wall in real empty room, successively adopt anhydrous acetone and absolute ethyl alcohol to carry out microwave supersound 15min to the basement respectively again to clean the basement totally with the cotton wool, adopt vacuum coating machine to plate optical film on the basement, the optical film outer fringe sets up the white district of staying, and the thickness of rete does in proper order:
| number of layers | Film material | Film thickness/nm |
| 1 | ZnS | 75 |
| 2 | YbF 3 | 546 |
| 3 | ZnS | 936 |
| 4 | Ge | 178 |
| 5 | ZnS | 191 |
；
(2) Covering the optical film with a ceramic chip, performing metallization film coating in the blank area by adopting a direct current magnetron sputtering method, sequentially plating a Cr layer, a Ni layer and an Au layer from the substrate to the top, and stripping the ceramic chip to obtain the infrared metallization all-through type germanium window piece.
Comparative example 1
This comparative example used a film structure of CN109143440A as an optical film, and the other conditions and parameters were exactly the same as those of example 1.
Comparative example 2
Comparative example 1 differs from example 1 only in that no metallization is performed, and the other conditions and parameters are exactly the same as those of example 1.
Comparative example 3
Comparative example 1 differs from example 1 only in that no transition zone is provided and other conditions and parameters are exactly the same as those of example 1.
And (3) performance testing:
the Fourier transform infrared spectrometer of the instrument mainly used for the spectrum test of the sample is a PE optical front type, and the test result is shown in the table 1:
TABLE 1
As can be seen from Table 1, the infrared metalized all-pass type germanium window piece of the invention can realize the average transmittance of more than 97% in the wavelength band of 7-14 μm and simultaneously realize the average transmittance of less than 40% in the wavelength band of 2-7 μm according to the embodiments 1-4.
As can be seen from comparison between example 1 and examples 3-4, the thickness of each layer of the optical film of the present invention is controlled to be 71-74 nm, YbF, of the first ZnS layer 3 542-545 nm of the film layer, 932-935 nm of the second ZnS film layer, 174-177 nm of the Ge film layer and 188-190 nm of the third ZnS film layer, if the range is exceeded, the spectrum will be deteriorated, and the larger the exceeding range is, the lower the transmittance is.
Compared with the embodiment 1, the invention has the advantages that the number of film layers is less through a brand-new film system design, the expansion of the window to the infrared transmission wave band is realized, and the application scene of the window is enriched.
Compared with the comparative example 2, the method has the advantages that the metallization operation is carried out on the window, the metallization of the edge of the window is realized under the condition that the transmittance of the window is not influenced, the welding reliability of the window is improved, the stronger adhesion can be ensured when the thickness of the metallized film layer is thicker and thinner, the metallization quality is ensured while the manufacturing cost is reduced, and the application scenes of the infrared window in the field of chips are enriched.
Compared with the embodiment 1 and the comparative example 3, the invention has the advantages that the transition region is arranged, so that the phenomenon of crossing between the metal film layer and the optical film layer is avoided, the risk of falling off of the film layer is reduced, and finally the packaging effect and the service life of the detector are improved.
The applicant declares that the above description is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be understood by those skilled in the art that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are within the scope and disclosure of the present invention.
Claims (10)
1. The utility model provides an infrared metallization is full leads to type germanium window piece, its characterized in that, infrared metallization is full leads to type germanium window piece includes the germanium basement and sets up in metal film, transition zone and the optical film on germanium basement surface, transition zone circumference set up in the optical film outer fringe, metal film circumference set up in the transition zone outer fringe, the membrane system structure of optical film is MLMHM, and wherein, M represents a lambda 0 A ZnS film layer of optical thickness,/4, L representing a lambda 0 YbF of/4 optical thickness 3 Film layer, H represents a lambda 0 And/4 optical thickness of Ge film layer.
2. The infrared metalized all-through germanium window according to claim 1, wherein said optical film comprises a first ZnS film layer, YbF, sequentially stacked 3 The film layer, the second ZnS film layer, the Ge film layer and the third ZnS film layer.
3. The infrared metalized all-through germanium window according to claim 2, wherein the thickness of the first ZnS film layer is 71-74 nm.
4. The infrared metalized all-through germanium window of claim 2 or 3, wherein said YbF 3 The thickness of the film layer is 542-545 nm.
5. The infrared metalized all-through germanium window according to any of claims 2 to 4, wherein the thickness of the second ZnS film layer is 932 to 935 nm.
6. The infrared metalized all-through germanium window of any one of claims 2 to 5, wherein the thickness of the Ge film layer is 174 to 177 nm.
7. The infrared metalized all-through germanium window according to any one of claims 2 to 6, wherein the third ZnS film layer has a thickness of 188 to 190 nm.
8. The infrared metalized all-through germanium window according to any one of claims 1 to 7, wherein said metal film comprises a Cr layer, a Ni layer and an Au layer sequentially disposed from the substrate up.
9. A method for preparing the infrared metalized all-through germanium window piece according to any one of claims 1 to 5, wherein the method comprises the following steps:
(1) taking germanium as a substrate, and plating an optical film on the substrate by adopting a vacuum film plating machine, wherein a blank area is arranged at the outer edge of the optical film;
(2) covering the optical film with a ceramic chip, performing metallization film coating in the blank area by adopting a direct current magnetron sputtering method, and stripping the ceramic chip to obtain the infrared metallization all-pass type germanium window.
10. The method according to claim 9, wherein the metallization in step (2) is performed by sequentially plating a Cr layer, a Ni layer, and an Au layer from the substrate upward.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117431505A (en) * | 2023-12-19 | 2024-01-23 | 安徽光智科技有限公司 | Mask method for metallized film coating of infrared detector window sheet |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011086511A1 (en) * | 2010-01-14 | 2011-07-21 | Aselsan Elektronik Sanayi Ve Ticaret Anonim Sirketi | An infrared lens |
| CN108459361A (en) * | 2018-04-12 | 2018-08-28 | 无锡奥夫特光学技术有限公司 | A kind of infrared optical window and preparation method thereof |
| CN208172279U (en) * | 2018-04-12 | 2018-11-30 | 无锡奥夫特光学技术有限公司 | A kind of infrared optical window |
| CN108962730A (en) * | 2018-07-11 | 2018-12-07 | 无锡奥夫特光学技术有限公司 | A kind of preparation method of infrared optical window |
| CN112596140A (en) * | 2020-11-26 | 2021-04-02 | 中国航空工业集团公司洛阳电光设备研究所 | Infrared long-wave cut-off filter and preparation method thereof |
| CN214176400U (en) * | 2021-02-05 | 2021-09-10 | 无锡奥夫特光学技术有限公司 | Carbon dioxide laser selects a mirror |
| CN114200552A (en) * | 2021-12-10 | 2022-03-18 | 云南驰宏国际锗业有限公司 | Germanium-based 8-12um infrared band window sheet and preparation method thereof |
-
2022
- 2022-05-20 CN CN202210553078.0A patent/CN114879283A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011086511A1 (en) * | 2010-01-14 | 2011-07-21 | Aselsan Elektronik Sanayi Ve Ticaret Anonim Sirketi | An infrared lens |
| CN108459361A (en) * | 2018-04-12 | 2018-08-28 | 无锡奥夫特光学技术有限公司 | A kind of infrared optical window and preparation method thereof |
| CN208172279U (en) * | 2018-04-12 | 2018-11-30 | 无锡奥夫特光学技术有限公司 | A kind of infrared optical window |
| CN108962730A (en) * | 2018-07-11 | 2018-12-07 | 无锡奥夫特光学技术有限公司 | A kind of preparation method of infrared optical window |
| CN112596140A (en) * | 2020-11-26 | 2021-04-02 | 中国航空工业集团公司洛阳电光设备研究所 | Infrared long-wave cut-off filter and preparation method thereof |
| CN214176400U (en) * | 2021-02-05 | 2021-09-10 | 无锡奥夫特光学技术有限公司 | Carbon dioxide laser selects a mirror |
| CN114200552A (en) * | 2021-12-10 | 2022-03-18 | 云南驰宏国际锗业有限公司 | Germanium-based 8-12um infrared band window sheet and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117431505A (en) * | 2023-12-19 | 2024-01-23 | 安徽光智科技有限公司 | Mask method for metallized film coating of infrared detector window sheet |
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