CN111555006A - Gold wire transition structure of Ka-band grounding coplanar waveguide - Google Patents
Gold wire transition structure of Ka-band grounding coplanar waveguide Download PDFInfo
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- CN111555006A CN111555006A CN202010437081.7A CN202010437081A CN111555006A CN 111555006 A CN111555006 A CN 111555006A CN 202010437081 A CN202010437081 A CN 202010437081A CN 111555006 A CN111555006 A CN 111555006A
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- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
Abstract
The utility model provides a Ka wave band ground connection coplanar waveguide gold wire transition structure, including ground connection coplanar waveguide, chip and gold wire, ground connection coplanar waveguide includes the base plate, the ground connection bottom, signal line and ground connection top layer, signal line and each ground connection top layer interval set up, the storage tank has openly been seted up to the base plate, the chip is installed in the storage tank, the signal line extends to the one end of storage tank, the gold wire links to each other with the chip, cascade is used for carrying out the impedance transformation stub that impedance matches with the gold wire between the one end of the adjacent chip of signal line and the gold wire, the front of base plate is located to the impedance transformation stub. The Ka-waveband grounding coplanar waveguide gold wire transition structure provided by the application has the advantages that the impedance transformation branch is added in the signal wire and the gold wire, so that impedance matching between the grounding coplanar waveguide and the gold wire can be well realized, the problems of return loss and standing-wave ratio performance deterioration caused by impedance mismatch are effectively solved, the manufacturing process requirements of a planar circuit are met, and the processing and manufacturing are easy.
Description
Technical Field
The application belongs to the technical field of microwave radio, and particularly relates to a Ka-band grounding coplanar waveguide gold wire transition structure.
Background
The Ka band is a radio wave band with the frequency of 26.5-40 GHz. In a Multi-chip module (MCM), a plurality of integrated circuit chips and other chip components are assembled on a high-density multilayer interconnection substrate, which is a mainstream implementation scheme of a microwave/millimeter wave module. The connection of the transmission line and the chip is a key link of the assembly process of the microwave/millimeter wave assembly. Common transmission line structures include microstrip lines, coplanar waveguides (CPW), striplines, and the like. The large-area grounding of the coplanar waveguide and the signal line are in the same plane, so that the radiation loss and the high-frequency dispersion can be effectively inhibited, the structural design is flexible, the grounded coplanar waveguide, the asymmetric coplanar waveguide and the like can be derived, and the grounded coplanar waveguide, the asymmetric coplanar waveguide and the like can be better integrated with other components in the multi-chip assembly. For a multi-chip module with a lower frequency band, the transmission line and the chip can be directly connected through gold wire bonding. However, since the impedance difference between the grounded coplanar waveguide and the gold wire is large, the gold wire is directly connected with the signal line in the grounded coplanar waveguide, and larger electromagnetic wave reflection is caused by impedance mismatch, so that the return loss and standing-wave ratio performance of the whole structure are deteriorated, and the deterioration is more serious as the frequency is higher.
Disclosure of Invention
An object of the embodiments of the present application is to provide a gold-wire transition structure of a Ka-band grounded coplanar waveguide, so as to solve the problem that return loss and standing-wave ratio performance are deteriorated due to impedance mismatch when a Ka-band grounded coplanar waveguide is connected to a gold wire in the related art.
In order to achieve the above purpose, the embodiment of the present application adopts the following technical solutions: providing a transition structure of a Ka-band grounded coplanar waveguide gold wire, which comprises a grounded coplanar waveguide, a chip and a gold wire connecting the chip and the grounded coplanar waveguide, wherein the grounded coplanar waveguide comprises a substrate, a grounded bottom layer arranged on the back surface of the substrate, a signal wire arranged on the front surface of the substrate and grounded surface layers respectively arranged on two sides of the signal wire, each grounded surface layer is arranged on the front surface of the substrate, the signal wire and each grounded surface layer are arranged at intervals, a containing groove is arranged on the front surface of the substrate, the chip is arranged in the containing groove, the signal wire extends to one end of the containing groove, the gold wire is connected with the chip, an impedance transformation branch which is used for impedance matching with the gold wire is cascaded between one end of the signal wire adjacent to the chip and the gold wire, and the impedance transformation branch is arranged on the front surface of the substrate, the impedance transformation branch section is located between the two grounding surface layers.
In one embodiment, the impedance transformation branch comprises a high impedance branch and a low impedance branch, one end of the high impedance branch is connected with the signal line, the other end of the high impedance branch is connected with the middle part of the low impedance branch along the width direction of the signal line, and the gold wire is connected with the low impedance branch.
In one embodiment, the characteristic impedance of the grounded coplanar waveguide is 50 Ω, and the impedance transformation branch is a gold layer; the high impedance stub is followed the length of signal line length direction is 0.25mm, the high impedance stub is followed the width of signal line width direction is 0.1mm, the low impedance stub is followed the length of signal line length direction is 0.25mm, the low impedance stub is followed the width of signal line width direction is 0.75 mm.
In one embodiment, the signal lines and the grounding surface layers are all made of gold, the width of the signal lines is 0.38mm, and the gaps between the signal lines and the grounding surface layers are 0.4 mm.
In one embodiment, the impedance transformation branch is connected to the chip through two gold wires, the two gold wires are arranged in a splayed shape along the length direction of the signal wire, and the distance between the two gold wires and the end close to the chip is smaller than the distance between the two gold wires and the end close to the impedance transformation branch.
In one embodiment, the span of each gold wire is less than or equal to 300 μm, the arch height of each gold wire is in a range of 100 μm to 200 μm, the distance between two gold wires near one end of the chip is in a range of less than or equal to 50 μm, and the distance between two gold wires near one end of the impedance transformation stub is in a range of 100 μm to 250 μm.
In one embodiment, the impedance transformation branch is symmetrically arranged about a middle line in the length direction of the signal wire, the grounding coplanar waveguide is symmetrically arranged about a middle line in the length direction of the signal wire, and the two gold wires are symmetrically arranged about a middle line in the length direction of the signal wire.
In one embodiment, the signal line is divided into two sections, the two sections of signal lines are respectively located at two ends of the accommodating groove, one end of each signal line, which is adjacent to the chip, is respectively connected with the impedance transformation branch sections, and the two impedance transformation branch sections are respectively connected with two ends of the chip through the gold wire.
In one embodiment, at least two rows of ground vias are respectively disposed on the substrate at two sides of the signal line, and each ground via connects the corresponding ground surface layer and the ground bottom layer; in two rows of the ground vias, each side of the signal line is adjacent to the signal line: the distance range between two adjacent ground through holes in each row of ground through holes is 0.5-1.1mm, the distance range between the two rows of ground through holes is 0.5-1.5 mm, and the two rows of ground through holes are arranged along the length direction of the signal wire in a staggered mode.
In one embodiment, a gap between the impedance transformation stub and each of the grounding skins is greater than or equal to 0.225 mm.
The beneficial effects of the Ka wave band grounding coplanar waveguide gold wire transition structure provided by the embodiment of the application are as follows: compared with the prior art, the impedance conversion branch is added in the signal wire and the gold wire, so that impedance matching between the grounding coplanar waveguide and the gold wire can be well realized, the problems of return loss and standing-wave ratio performance deterioration caused by impedance mismatch are effectively solved, the manufacturing process requirements of a planar circuit are met, and the planar circuit is easy to process and manufacture.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or exemplary technical descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic perspective view of a gold wire transition structure of a Ka-band grounded coplanar waveguide provided in an embodiment of the present application;
FIG. 2 is a schematic top view of a gold wire transition structure of the Ka-band grounded coplanar waveguide of FIG. 1;
FIG. 3 is an enlarged view of portion A of FIG. 1;
FIG. 4 is a partial schematic structural view taken along line B-B in FIG. 3;
FIG. 5 is an enlarged view of a portion of the structure of FIG. 1;
fig. 6 is an equivalent circuit diagram when the signal line of the grounded coplanar waveguide is directly connected to the chip through a gold wire.
Fig. 7 is an equivalent circuit diagram formed by an impedance transformation stub and a corresponding gold wire in the Ka-band grounded coplanar waveguide gold wire transition structure provided in the embodiment of the present application.
Fig. 8 is an effect diagram of transmission performance simulation of a Ka-band grounded coplanar waveguide gold wire transition structure provided in an embodiment of the present application.
Wherein, in the drawings, the reference numerals are mainly as follows:
a gold wire transition structure of the 100-Ka wave band grounding coplanar waveguide;
10-a grounded coplanar waveguide; 11-a substrate; 111-a receiving groove; 112-; 12-a ground floor; 13-a grounded surface layer; 14-a signal line;
20-chip;
30-gold wire;
40-impedance transformation branches; 41-high impedance branch knot; 42-Low resistance Branch.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present application clearer, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
In the description of the present application, "a plurality" means two or more unless specifically limited otherwise. The meaning of "a number" is one or more unless specifically limited otherwise.
In the description of the present application, it is to be understood that the terms "center", "length", "width", "thickness", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used merely for convenience in describing the present application and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be considered limiting of the present application.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
Reference throughout this specification to "one embodiment," "some embodiments," or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the present application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," or the like, in various places throughout this specification are not necessarily all referring to the same embodiment, but rather "one or more but not all embodiments" unless specifically stated otherwise. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
Referring to fig. 1, for convenience of description, three coordinate axes that are spatially perpendicular to each other are defined as an X axis, a Y axis and a Z axis, wherein the X axis is along the length direction of the signal line, the Y axis is along the width direction of the signal line, and the Z axis is along the thickness direction of the signal line.
Referring to fig. 1, 2 and 3, a gold transition structure 100 of a Ka-band grounded coplanar waveguide provided by the present application will now be described. The Ka-band grounded coplanar waveguide gold wire transition structure 100 comprises a grounded coplanar waveguide 10, a chip 20, a gold wire 30 and an impedance transformation branch 40. The grounded coplanar waveguide 10 comprises a substrate 11, a grounded bottom layer 12, a signal line 14 and two grounded surface layers 13, wherein the grounded bottom layer 12 is arranged on the back surface of the substrate 11, the signal line 14 and the two grounded surface layers 13 are arranged on the front surface of the substrate 11, the two grounded surface layers 13 are respectively arranged on two sides of the signal line 14, and the signal line 14 and each grounded surface layer 13 are arranged at intervals, so that the grounded coplanar waveguide 10 is formed. The front surface of the substrate 11 is provided with a receiving groove 111, the signal line 14 extends to one end of the receiving groove 111, that is, the receiving groove 111 is disposed at a position corresponding to the signal line 14, and the chip 20 is mounted in the receiving groove 111, so that the chip 20 is conveniently mounted, and the chip meets the requirements of a planar circuit manufacturing process, and is easy to process and manufacture. The gold wire 30 is connected with the chip 20, the impedance transformation branch is arranged on the front surface of the substrate 11, the impedance transformation branch 40 is used for performing impedance matching with the gold wire 30, and the impedance transformation branch 40 is connected with one end of the signal wire 14, which is close to the chip 20, and the gold wire 30, namely, the signal wire 14 and the gold wire 30 are connected through the impedance transformation branch 40 in an impedance matching manner, so that the problems of return loss and standing-wave ratio performance deterioration caused by impedance mismatch are effectively solved.
Compared with the prior art, the Ka-band grounding coplanar waveguide gold wire transition structure 100 provided by the application has the advantages that the impedance conversion branches 40 are added into the signal wires 14 and the gold wires 30, so that impedance matching between the grounding coplanar waveguide 10 and the gold wires 30 can be well realized, the problems of return loss and standing-wave ratio performance deterioration caused by impedance mismatch are effectively solved, the manufacturing process requirements of a planar circuit are met, and the processing and manufacturing are easy.
In one embodiment, referring to fig. 3 and 5, the impedance transformation branch 40 includes a high impedance branch 41 and a low impedance branch 42, one end of the high impedance branch 41 is connected to the signal line 14, the other end of the high impedance branch 41 is connected to the middle of the low impedance branch 42 along the width direction of the signal line 14, the gold wire 30 is connected to the low impedance branch 42, so that the connection between the signal line 14 and the gold wire 30 is realized, and the impedance transformation branch 40 may form a T-shaped structure. So as to better realize the impedance matching between the gold wire 30 and the signal line 14.
Referring to fig. 6, the circuit shown in fig. 6 is an equivalent circuit of the gold wire 30 when the gold wire 30 is used to directly connect the chip 20 and the signal line 14. The equivalent circuit comprises two inductors L1, two resistors R1, two capacitors C1 and a capacitor C2, wherein the inductor L1, the resistor R1, the resistor R1 and the inductor L1 are sequentially connected in series, one end of one inductor L1, which is far away from the two resistors R1, is a chip end used for connecting the chip 20, one end of the other inductor L1, which is far away from the two resistors R1, is a signal line end used for connecting the signal line 14, namely from the chip end to the signal line end, and the inductor L1, the resistor R1, the resistor R1 and the inductor L1 are sequentially connected in series; the chip end is grounded through a capacitor C1, the signal line end is grounded through another capacitor C1, and the two resistors R1 are grounded through a capacitor C2.
Referring to fig. 7, the T-shaped impedance transformation stub 40 is used to connect the gold wire 30 and the signal line 14, and the equivalent circuit of the impedance transformation stub 40 and the gold wire 30 includes two inductors L1, two resistors R1, one inductor Lp, one capacitor Cp, two capacitors C1 and one capacitor C2, where the inductor L1, the resistor R1, the resistor R1, the inductor L1 and the inductor Lp are sequentially connected in series, one end of the inductor L1 away from the inductor Lp is a chip end for connecting the chip 20, one end of the inductor Lp away from the two resistors R1 is a signal line end for connecting the signal line 14, that is, the inductor L1, the resistor R1, the resistor R1, the inductor L1 and the inductor Lp are sequentially connected in series; the chip end is grounded through a capacitor C1, the two resistors R1 are grounded through a capacitor C2, the other capacitor C1 is connected with the capacitor Cp in parallel, and one end of the inductor Lp far away from the signal line end is grounded through the capacitor Cp. The inductor Lp and the capacitor Cp may form an L-type impedance matching network, that is, the equivalent circuit using the impedance transforming stub 40 is equivalent to adding the L-type impedance matching network at the signal line end of the equivalent circuit directly using the gold wire 30 to connect the signal line 14, so that the ultra-wideband impedance matching of the grounded coplanar waveguide 10 and the gold wire 30 can be better realized. Of course, in some embodiments, other shapes of the impedance transforming stub 40 may be used to achieve impedance matching between the gold wire 30 and the signal wire 14.
In one embodiment, referring to fig. 3 to 5, the characteristic impedance of the grounded coplanar waveguide 10 is 50 Ω, and the impedance transformation branch 40 is a gold layer; the length of the high-impedance branch 41 along the length direction of the signal line 14 is 0.25mm, the width of the high-impedance branch 41 along the width direction of the signal line 14 is 0.1mm, the length of the low-impedance branch 42 along the length direction of the signal line 14 is 0.25mm, and the width of the low-impedance branch 42 along the width direction of the signal line 14 is 0.75 mm.
In one embodiment, referring to fig. 1 to 3, the signal line 14 and the grounding surface layer 13 are all made of gold, the width of the signal line 14 is 0.38mm, and the gap between the signal line 14 and each grounding surface layer 13 is 0.4mm, so that the grounding coplanar waveguide 10 has good transmission performance, and the grounding coplanar waveguide 10 has 50 Ω characteristic impedance, thereby improving the application range of the grounding coplanar waveguide 10.
In one embodiment, referring to fig. 3 and 4, the thickness of the gold layer is in a range of 10-20 μm, that is, the impedance transformation branch 40 is made of gold material, the thickness of the impedance transformation branch 40 is in a range of 10-20 μm, the signal line 14 and the grounding surface layer 13 are made of gold material, and the thickness of the signal line 14 and the grounding surface layer 13 is in a range of 10-20 μm, so as to ensure that the grounding coplanar waveguide 10 has good transmission performance and the impedance transformation branch 40 realizes impedance matching between the gold wire 30 and the signal line 14. In some embodiments, the thickness of each gold layer is 15 μm to ensure good transmission performance and impedance matching characteristics of the grounded coplanar waveguide 10 and the impedance transformation stub 40.
In one embodiment, the impedance transformation branches 40, the signal lines 14 and the grounding surface layer 13 have the same thickness, so as to facilitate the manufacturing process, such as printing on the substrate 11.
In one embodiment, referring to fig. 3 and 5, the impedance transformation branch is connected to the chip 20 through two gold wires 30, the two gold wires 30 are arranged in a splay shape along the length direction of the signal line 14, and the distance between the two gold wires 30 and the end of the chip 20 is smaller than the distance between the two gold wires 30 and the end of the impedance transformation branch. The two gold wires 30 are used for connecting the impedance conversion branch and the chip 20, so that the two gold wires 30 form a symmetrical structure better, the impedance is reduced, and the transmission performance is improved.
In one embodiment, referring to fig. 3 to 5, the span of each gold wire 30 is less than or equal to 300 μm, the arch height of each gold wire 30 is in a range of 100 μm to 200 μm, the distance between two gold wires 30 near one end of the chip 20 is less than or equal to 50 μm, and the distance between two gold wires 30 near one end of the impedance transformation branch is in a range of 100 μm to 250 μm, so that the gold wires 30 have smaller resistance and inductance characteristics, that is, the impedance of the gold wires 30 is reduced, the transmission performance of the gold wires 30 is improved, and the gold wires are well matched with the impedance transformation branches 40, and the processing and the manufacturing are also convenient.
In some embodiments, the span of each gold wire 30 is 260 μm, the arch height of each gold wire 30 is 150 μm, the distance between one end of each gold wire 30 close to the chip 20 is 25 μm, and the distance between one end of each gold wire 30 close to the impedance transformation branch is 175 μm, so that the gold wires 30 have smaller resistance and inductance characteristics, that is, the impedance of the gold wires 30 is reduced, the transmission performance of the gold wires 30 is improved, the gold wires 30 are better ensured to be well connected with the impedance transformation branches 40 and the chip 20, and the impedance transformation branches 40 of the gold wires 30 are better matched.
In one embodiment, referring to fig. 1, 3 and 5, the impedance transformation branch is symmetrically disposed about a central line of the signal line 14 in the length direction, the grounding coplanar waveguide 10 is symmetrically disposed about a central line of the signal line 14 in the length direction, and the two gold wires 30 are symmetrically disposed about a central line of the signal line 14 in the length direction, so that the grounding coplanar waveguide 10, the gold wires 30 and the impedance transformation branch form a symmetrical structure, which facilitates the manufacturing process and ensures the good transmission performance and the low return loss of the Ka-band grounding coplanar waveguide gold wire transition structure 100. Of course, in some embodiments, if the substrate 11 or the chip 20 itself has an asymmetric structure, only the positions of the signal line 14, the impedance transformation branch and the gold wire 30 need to be adjusted accordingly, so that good impedance matching between the gold wire 30 and the signal line 14 can be realized, and good transmission performance is ensured.
In an embodiment, referring to fig. 1, fig. 3 and fig. 5, the signal line 14 is two segments, the two segments of the signal line 14 are respectively located at two ends of the accommodating groove 111, one end of each signal line 14 adjacent to the chip 20 is respectively connected to an impedance transformation branch, and the two impedance transformation branches are respectively connected to two ends of the chip 20 through the gold wire 30, so that the chip 20 is conveniently mounted, and the two ends of the chip 20 can be connected to the two segments of the signal line 14 in a matching manner. In other embodiments, when only one end of the chip 20 is required to be connected to the signal line 14, the receiving groove 111 may be disposed at one end of the substrate 11, so as to mount the chip 20 on the edge of the substrate 11.
In an embodiment, referring to fig. 1 and fig. 2, when the signal line 14 is two segments, the lengths of the two segments of the signal line 14 are equal, and the receiving groove 111 is located at the middle position of the substrate 11, so that the grounded coplanar waveguide 10 is symmetrically arranged with respect to the center line of the substrate 11 in the length direction, thereby facilitating the design and manufacture and ensuring good transmission performance of the grounded coplanar waveguide 10.
In one embodiment, referring to fig. 1 and fig. 2, at least two rows of ground vias are respectively disposed on two sides of the signal line 14 on the substrate 11, and each ground via connects the corresponding ground surface layer 13 and the ground bottom layer 12, so as to improve the transmission performance of the grounded coplanar waveguide 10, improve the transmission efficiency, and reduce the loss.
In one embodiment, referring to fig. 1 and 2, each side of the signal line 14 is adjacent to two rows of ground vias of the signal line 14: the distance range between two adjacent ground through holes in each row of ground through holes is 0.5-1.1 mm; the distance range between the two rows of the grounding through holes is 0.5mm-1.5mm, and the two adjacent rows of the grounding through holes are arranged along the length direction of the signal line 14 in a staggered mode, so that the transmission efficiency of the grounding coplanar waveguide 10 is improved better, and the loss is reduced.
In one embodiment, the aperture of each ground via is in the range of 0.1-0.3mm to facilitate manufacturing. In one embodiment, the aperture of each ground via is 0.2mm, which facilitates the fabrication and improves the transmission efficiency of the grounded coplanar waveguide 10, thereby balancing the improvement of the transmission efficiency of the grounded coplanar waveguide 10 with the simplicity of the fabrication process.
In one embodiment, the signal line 14 is adjacent to the signal line 14 on each side in two rows of ground vias: the connecting line between the axes of any adjacent three grounding through holes is in an isosceles triangle shape, so that the electromagnetic leakage is better prevented, and the transmission efficiency of the grounding coplanar waveguide 10 is improved.
In one embodiment, the signal line 14 is adjacent to the signal line 14 on each side in two rows of ground vias: the connecting line between the axes of any adjacent three grounding through holes is in an equilateral triangle shape, which is convenient for design and manufacture and can improve the transmission efficiency of the grounding coplanar waveguide 10.
In one embodiment, the signal line 14 is adjacent to the signal line 14 on each side in two rows of ground vias: the distance between two adjacent ground through holes in each row of ground through holes is 1mm, so that the processing and the manufacturing are convenient.
In one embodiment, referring to fig. 3, the gap between the impedance transformation branch and each grounding surface layer 13 is greater than or equal to 0.225mm, so as to meet the requirements of most planar circuit processing technologies, facilitate the processing and manufacturing, and reduce the cost.
In one embodiment, referring to fig. 1 and 4, the dielectric constant of the substrate 11 ranges from 5.0 to 10.0, and the dielectric loss factor tan α of the substrate 11 is less than or equal to 0.004, so as to ensure good transmission performance of the grounded coplanar waveguide 10. In some embodiments, the substrate 11 may be made of a ceramic material, so that the grounded coplanar waveguide 10 may be fabricated by a low temperature co-fired ceramic process. Of course, in some embodiments, the substrate 11 may be made of other materials.
In one embodiment, the substrate 11 is rectangular, the signal lines 14 are disposed along the length direction of the substrate 11, and the length direction of the substrate 11 is the length direction of the signal lines 14, i.e., the X-axis direction; the width direction of the substrate 11 is the width direction of the signal line 14, i.e., the Y-axis direction; the thickness direction of the substrate 11 is the thickness direction of the signal line 14, i.e., the Z-axis direction. The structure can better make the grounding coplanar waveguide 10 into a symmetrical structure, thereby improving the transmission performance and reducing the transmission loss.
In one embodiment, the length of the substrate 11 is 25.4mm, the width of the substrate 11 is 12.7mm, and the thickness of the substrate 11 is 0.31mm, so that the Ka-band grounded coplanar waveguide gold wire transition structure 100 has a small volume and is convenient to use.
In one embodiment, the distance between the inner wall of the receiving groove 111 and the side surface of the chip 20 is in a range of 60-100 μm, so as to facilitate the chip 20 to be mounted in the receiving groove 111. In one embodiment, the distance between the inner wall of the receiving groove 111 and the side surface of the chip 20 is 80 μm, which facilitates the chip 20 to be mounted in the receiving groove 111 and also facilitates the chip 20 to be fixed.
In one embodiment, the front surface of the chip 20 is flush with the front surface of the grounded coplanar waveguide 10, so that the requirements of a planar circuit processing technology can be better met, and the manufacturing accuracy is improved.
In some embodiments, the bottom surface of the chip 20 may be grounded to the ground plane 12 through metal pads to reduce transmission loss.
Referring to fig. 8, an effect diagram of transmission performance simulation of the Ka-band grounded coplanar waveguide gold wire transition structure 100 provided in the embodiment of the present application is shown, in which a 50 Ω characteristic impedance back-metallization coplanar waveguide is used to replace the chip 20 for electromagnetic simulation. In the figure, the horizontal coordinate axis Freq is frequency and the unit is GHz; the vertical coordinate axis Insertion/Return Loss on the left side is Insertion/Return Loss in dB; VSWR (Voltage Standing Wave Ratio, collectively referred to as Voltage Standing Wave Ratio, VSWR in short), and the vertical axis VSWR on the right side is the Standing Wave Ratio. Curve Info Curve information, Y Axis (i.e., vertical Axis). Wherein, the line S (1, 1) is a curve of return loss corresponding to each frequency, the frequency at a high point m2 on the line S (1, 1) is 32.98GHz, and the return loss is-23.0291 dB; the line S (2, 1) is a curve of insertion loss corresponding to each frequency, the frequency at the low point m1 on the line S (2, 1) is 40GHz, and the insertion loss is-1.0347 dB; line V (1) is a curve of standing wave ratio corresponding to each frequency, the frequency at a high point m3 on line V (1) is-23.0291 GHz, and the standing wave ratio is 1.1518. As can be seen from the figure, the gold wire transition structure 100 of the Ka-band grounded coplanar waveguide in the embodiment of the present application has excellent transmission performance in the Ka-band, an insertion loss less than 1.1dB, a return loss greater than 23.0dB, and a standing-wave ratio less than 1.2.
The Ka-band grounded coplanar waveguide gold wire transition structure 100 in the embodiment of the application can be manufactured by an LTCC (low temperature Co-fired Ceramic) process or other planar printing processes, for example, a cavity can be drawn at a corresponding position of a green Ceramic chip, and stacked from bottom to top to print metal patterns and fill holes of each layer; and sintering and molding, wherein the substrate 11 can be electroplated and cleaned, and the chip 20 and the gold wire 30 are mounted and bonded in sequence by adopting a chip mounting process.
The Ka-band grounded coplanar waveguide gold wire transition structure 100 in the embodiment of the application can be applied to Ka-band transceiving components, and can also be applied to microwave communication, radar systems, electronic countermeasure equipment and the like.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
- The Ka-band grounding coplanar waveguide gold wire transition structure comprises a grounding coplanar waveguide, a chip and a gold wire, wherein the gold wire is connected with the chip and the grounding coplanar waveguide, the grounding coplanar waveguide comprises a substrate, a grounding bottom layer arranged on the back surface of the substrate, a signal wire arranged on the front surface of the substrate and grounding surface layers respectively arranged on two sides of the signal wire, the grounding surface layers are arranged on the front surface of the substrate, the signal wire and the grounding surface layers are arranged at intervals, a containing groove is formed in the front surface of the substrate, the chip is arranged in the containing groove, the signal wire extends to one end of the containing groove, and the gold wire is connected with the chip, and the Ka-band grounding coplanar waveguide gold wire transition structure is characterized: and an impedance transformation branch which is used for carrying out impedance matching with the gold wire is cascaded between one end of the signal wire, which is adjacent to the chip, and the gold wire, the impedance transformation branch is arranged on the front surface of the substrate, and the impedance transformation branch is positioned between the two grounding surface layers.
- 2. The Ka band ground coplanar waveguide gold wire transition structure of claim 1, wherein: the impedance transformation branch comprises a high-impedance branch and a low-impedance branch, one end of the high-impedance branch is connected with the signal wire, the other end of the high-impedance branch is connected with the middle of the low-impedance branch along the width direction of the signal wire, and the gold wire is connected with the low-impedance branch.
- 3. The Ka band ground coplanar waveguide gold wire transition structure of claim 2, wherein: the characteristic impedance of the grounding coplanar waveguide is 50 omega, and the impedance transformation branch is a gold layer; the high impedance stub is followed the length of signal line length direction is 0.25mm, the high impedance stub is followed the width of signal line width direction is 0.1mm, the low impedance stub is followed the length of signal line length direction is 0.25mm, the low impedance stub is followed the width of signal line width direction is 0.75 mm.
- 4. The Ka-band grounded coplanar waveguide gold wire transition structure of claim 3, wherein: the signal lines and the grounding surface layers are all made of gold layers, the width of each signal line is 0.38mm, and gaps between the signal lines and the grounding surface layers are 0.4 mm.
- 5. The Ka-band grounded coplanar waveguide gold wire transition structure of any one of claims 1 to 4, wherein: the impedance transformation branch is connected with the chip through the two gold wires, the two gold wires are arranged in a splayed shape along the length direction of the signal wire, and the distance between the two gold wires and the end, close to the chip, of the two gold wires is smaller than the distance between the two gold wires and the end, close to the impedance transformation branch, of the two gold wires.
- 6. The Ka-band grounded coplanar waveguide gold wire transition structure of claim 5, wherein: the span range of each gold wire is less than or equal to 300 mu m, the arch height range of each gold wire is 100 mu m-200 mu m, the distance range of one end, close to the chip, of each gold wire is less than or equal to 50 mu m, and the distance range of one end, close to the impedance transformation branch, of each gold wire is 100 mu m-250 mu m.
- 7. The Ka-band grounded coplanar waveguide gold wire transition structure of claim 5, wherein: the impedance transformation branch sections are symmetrically arranged relative to the central line of the length direction of the signal wire, the grounding coplanar waveguide is symmetrically arranged relative to the central line of the length direction of the signal wire, and the two gold wires are symmetrically arranged relative to the central line of the length direction of the signal wire.
- 8. The Ka-band grounded coplanar waveguide gold wire transition structure of any one of claims 1 to 4, wherein: the signal lines are two sections, the two sections of signal lines are respectively located at two ends of the accommodating groove, one end, adjacent to the chip, of each signal line is respectively connected with the impedance transformation branch sections, and the two impedance transformation branch sections are respectively connected with two ends of the chip through the gold wires.
- 9. The Ka-band grounded coplanar waveguide gold wire transition structure of any one of claims 1 to 4, wherein: at least two rows of grounding through holes are respectively arranged on the two sides of the signal line on the substrate, and each grounding through hole is connected with the corresponding grounding surface layer and the corresponding grounding bottom layer; in two rows of the ground vias, each side of the signal line is adjacent to the signal line: the distance range between two adjacent ground through holes in each row of ground through holes is 0.5-1.1mm, the distance range between the two rows of ground through holes is 0.5-1.5 mm, and the two rows of ground through holes are arranged along the length direction of the signal wire in a staggered mode.
- 10. The Ka-band grounded coplanar waveguide gold transition structure of any one of claims 1 to 4, wherein the gap between the impedance transformation stub and each of the grounding surfaces is greater than or equal to 0.225 mm.
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| CN114200211A (en) * | 2020-09-02 | 2022-03-18 | 日本梅克特隆株式会社 | Inspection method and inspection apparatus |
| CN113036377A (en) * | 2020-12-21 | 2021-06-25 | 安徽大学 | Gold wire interconnection vertical compensation structure in radio frequency micro system and design method thereof |
| CN113036377B (en) * | 2020-12-21 | 2021-09-28 | 安徽大学 | Gold wire interconnection vertical compensation structure in radio frequency micro system and design method thereof |
| CN112993505A (en) * | 2021-02-24 | 2021-06-18 | 电子科技大学 | Terahertz wire-jumping-free coplanar waveguide single chip and system-level circuit low-insertion-loss packaging structure |
| CN112993505B (en) * | 2021-02-24 | 2022-05-03 | 电子科技大学 | Terahertz wire-jumping-free coplanar waveguide single chip and system-level circuit low-insertion-loss packaging structure |
| CN113191036A (en) * | 2021-03-19 | 2021-07-30 | 西安电子科技大学 | Coplanar waveguide equivalent circuit structure and parameter extraction method thereof |
| CN113191036B (en) * | 2021-03-19 | 2023-03-14 | 西安电子科技大学 | Coplanar waveguide equivalent circuit structure and parameter extraction method thereof |
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