CN111554667A - Power semiconductor device - Google Patents

Power semiconductor device Download PDF

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Publication number
CN111554667A
CN111554667A CN202010071925.0A CN202010071925A CN111554667A CN 111554667 A CN111554667 A CN 111554667A CN 202010071925 A CN202010071925 A CN 202010071925A CN 111554667 A CN111554667 A CN 111554667A
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CN
China
Prior art keywords
capacitor
power semiconductor
semiconductor device
busbar
substrate
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Pending
Application number
CN202010071925.0A
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Chinese (zh)
Inventor
T·洪卡
S·魏斯
T·齐格勒
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Semikron Electronics Co ltd
Semikron Elektronik GmbH and Co KG
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Semikron Electronics Co ltd
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Application filed by Semikron Electronics Co ltd filed Critical Semikron Electronics Co ltd
Publication of CN111554667A publication Critical patent/CN111554667A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/02—Mountings
    • H01G2/06—Mountings specially adapted for mounting on a printed-circuit support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/10—Housing; Encapsulation
    • H01G2/106—Fixing the capacitor in a housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/224—Housing; Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/14—Mounting supporting structure in casing or on frame or rack
    • H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
    • H05K7/1427—Housings
    • H05K7/1432—Housings specially adapted for power drive units or power converters
    • H05K7/14329—Housings specially adapted for power drive units or power converters specially adapted for the configuration of power bus bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/10—Housing; Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
    • H01L2023/4062—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink heatsink to or through board or cabinet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Abstract

The present invention relates to a power semiconductor device, which comprises: a substrate, a power semiconductor component, an elastically deformable element, a pressing element, a busbar and a capacitor, the capacitor being conductively connected to the busbar and having capacitance forming means, which forms the capacitance of the capacitor, the power semiconductor device having a capacitor mounting device which has a cup-shaped receiving device for receiving the capacitor and in which the capacitor is arranged, a busbar connection element which is conductively connected to the busbar extending from the busbar in the direction of the substrate, a deformation element being arranged between the capacitor mounting device on the side facing away from the busbar and the pressing element, the pressing element and the capacitor mounting device being formed in sections, the pressing element being designed to press the capacitor mounting device in the direction of the busbar by means of the deformation element, thereby pressing the busbar in a direction towards the substrate to press the busbar connection element against the conductor tracks of the substrate, so that the busbar connection element is pressed into electrically conductive contact with these conductor tracks of the substrate.

Description

Power semiconductor device
Technical Field
The present invention relates to a power semiconductor device.
Background
DE 102009046403B 4 discloses a power semiconductor device having a substrate and having a power semiconductor component arranged on the substrate and conductively connected to the substrate, having a conductive DC voltage busbar and having a capacitor, the capacitor terminals of which are conductively connected to the DC voltage busbar. In order to mount the capacitor, the power semiconductor device has a capacitor mounting device which has a receiving device for receiving the capacitor and in which the capacitor is arranged, wherein electrically conductive busbar connection elements which are conductively connected to the DC voltage busbar extend from the DC voltage busbar in the direction of the substrate and press against the electrically conductive conductor tracks of the substrate, so that the busbar connection elements are pressed into electrically conductive contact with these conductor tracks of the substrate. An elastic deformation element is arranged between the capacitor mounting device and the capacitor, by which the capacitor mounting device applies a pressure to the DC voltage bus bar in a direction toward the substrate. Furthermore, the power semiconductor device has a screw as a pressure generating device for generating the pressure required for this purpose, by means of which screw the capacitor mounting device is screwed to the bottom housing element. Since the screws exert a pressure on the capacitor mounting arrangement in a laterally offset manner with respect to the elastically deformable elements on the capacitor mounting arrangement, the geometry of the capacitor mounting arrangement is subjected to high bending forces which, in the long term, may lead to mechanical failure of the capacitor mounting arrangement and may thus lead to a reduced lifetime of the power semiconductor arrangement. In the case of such power semiconductor devices, a further advantage is that, in the case of conventional capacitors, the hard encapsulation of the capacitor is pressed against the DC voltage busbar, into which hard encapsulation those elements of the capacitor which form the capacitance of the capacitor are cast, which can lead to a fracture of the hard encapsulation and thus to a damage of the capacitor.
Disclosure of Invention
The object of the invention is to provide a reliable and mechanically stable power semiconductor device which can be manufactured more rationally.
This object is achieved by a power semiconductor device having a substrate, having a power semiconductor component which is arranged on the substrate and is conductively connected to the substrate, having an elastically deformable element, having a pressing element, having a conductive busbar and having a capacitor which is conductively connected to the busbar and has a capacitance forming means which forms the capacitance of the capacitor, wherein for mounting the capacitor the power semiconductor device has a capacitor mounting device which has a cup-shaped receiving means for receiving the capacitor and in which the capacitor is arranged, wherein a conductive busbar connection element which is conductively connected to the busbar extends from the busbar in the direction of the substrate, wherein the deformable element is arranged between the pressing element and a side of the capacitor mounting device facing away from the busbar, wherein the pressing element and the capacitor mounting device are formed in sections, wherein the pressing element is designed to press the capacitor mounting device in the direction towards the bus bar by means of the deformation element, thereby pressing the bus bar in the direction towards the substrate, thereby pressing the bus bar connection element against the conductive conductor tracks of the substrate, so that the bus bar connection element is pressed into conductive contact with these conductor tracks of the substrate.
It has proven to be advantageous if the power semiconductor device has a plurality of capacitors which are electrically conductively connected to the busbar, and each capacitor has a capacitance forming device which forms the capacitance of the respective capacitor, wherein for mounting the capacitor the power semiconductor device has a capacitor mounting device which has a cup-shaped receiving device for receiving the capacitor, wherein the respective capacitor is arranged in the respective receiving device. The power semiconductor device may thus have a plurality of correspondingly mounted capacitors.
It has proven advantageous if the capacitor mounting device, in particular the receiving device, is supported on the busbar and is in mechanical contact with the busbar. The capacitor mounting means are thus pressed directly onto the bus bar.
It has furthermore proved advantageous if the capacitor is arranged by means of the encapsulation material being cast into the receiving device. The capacitor mounting arrangement thus forms a structural unit with the capacitor, which enables rational manufacture of the power semiconductor arrangement.
In this respect, it has proven advantageous if the capacitance forming means are materially connected to the receiving means by means of an encapsulation material, wherein the encapsulation material is in mechanical contact with the capacitance forming means and the receiving means. The power semiconductor device is therefore designed in a particularly compact manner.
Alternatively, in this respect it has proven advantageous if the capacitor has a capacitor housing in which the capacitance forming means are arranged, wherein the capacitor housing is materially connected to the receiving means by means of an encapsulation material, wherein the encapsulation material is in mechanical contact with the capacitor housing and the receiving means. Capacitors with commercial capacitor cases can thus be used to form power semiconductor devices.
If the capacitor mounting means, in particular the receiving means, are supported on the busbar and are in mechanical contact with the busbar, it has proven advantageous if the capacitor and the encapsulating material are not in mechanical contact with the busbar. Thus, only the capacitor mounting means, in particular only the receiving means, in particular only the side walls of the receiving means, are pressed against the bus bar. Therefore, the capacitor and the encapsulation material are not mechanically loaded by the pressure introduced by the pressing element, so that the power semiconductor device has a very long lifetime.
Furthermore, it has proven to be advantageous if the capacitor has a capacitor housing in which the capacitance forming means are arranged, wherein the capacitor housing is arranged in such a way that it is pressed into the receiving means. The faulty capacitor can therefore be easily replaced.
If the capacitor mounting means, in particular the receiving means, are supported on the busbar and are in mechanical contact with the busbar, it has proven advantageous in this respect if the capacitor is not in mechanical contact with the busbar. Thus, only the capacitor mounting means, in particular only the receiving means, in particular only the side walls of the receiving means, are pressed against the bus bar. The capacitor is therefore not mechanically loaded by the pressure introduced by the pressing element, so that the power semiconductor device has a very long lifetime.
Furthermore, it has proven to be advantageous if the deformation element has a foam structure and/or is formed from an elastomer. The deformation element therefore has particularly good spring properties.
Furthermore, it has proven to be advantageous if the busbar has a conductive positive potential rail and a conductive negative potential rail, which are arranged in an electrically isolated manner from one another by a non-conductive isolating layer arranged between the positive potential rail and the negative potential rail. A compact construction of the bus bar is thus achieved.
Furthermore, it has proven to be advantageous if the power semiconductor device has a pressure generating device which exerts a pressure on the pressure element in the direction of the substrate, wherein the pressure element thus presses the capacitor mounting device in the direction of the busbar by means of the deformation element. Therefore, the power semiconductor device itself is likely to generate stress.
Furthermore, it has proven to be advantageous if the power semiconductor device has a metallic base body, wherein the substrate is arranged on the base body. The metal base makes it possible to cool the power semiconductor components efficiently.
In this connection, it has proven to be advantageous if the base plate is pressed onto the base body and is therefore connected to the base body in a force-fitting manner. A good thermal connection of the substrate to the base body is thus achieved even if the substrate is connected to the base body without material.
Drawings
Exemplary embodiments of the invention are explained below with reference to the following drawings, in which:
figure 1 shows a side cross-sectional view of one design of a power semiconductor device according to the invention,
FIG. 2 shows a side cross-sectional view of another design of a power semiconductor device according to the invention, and
fig. 3 shows a side sectional view of another design of a power semiconductor device according to the invention.
Detailed Description
Fig. 1 shows a side sectional view of a design of a power semiconductor device 1 according to the invention. Fig. 2 and 3 each show a further design of a power semiconductor device 1 according to the invention.
The power semiconductor device 1 according to the invention has a substrate 3, and a power semiconductor component 4 is arranged on the substrate 3 and is conductively connected to the substrate 3. The power semiconductor switches are in this case usually in the form of transistors, for example IGBTs (insulated gate bipolar transistors) or MOSFETs (metal oxide semiconductor field effect transistors), or in the form of thyristors. The substrate 3 has an insulating material body 3a (for example a ceramic body) and an electrically conductive structured first electrically conductive layer 3b, which first electrically conductive layer 3b is arranged on the main side of the insulating material body 3a and is connected to the insulating material body 3a and, due to its structure, the first electrically conductive layer 3b forms an electrically conductive conductor track 3 b'. The substrate 3 preferably has a conductive, preferably unstructured, second conductive layer 3c, wherein a body of insulating material 3a is arranged between the structured first conductive layer 3b and the second conductive layer 3 c. The substrate 3 may be present in the form of, for example, a direct copper bonding substrate (DCB substrate), an active metal brazing substrate (AMB substrate), or an Insulating Metal Substrate (IMS). The power semiconductor components 4 are preferably connected to the associated conductor tracks 3b' of the base plate 3 in material, for example by means of a solder layer or a sintered layer.
Further, the power semiconductor device 1 has an elastic deformation element 10 and a pressing element 11. The deformation element 10 may have a foam structure and/or be formed of an elastomer. The deformation element 10 is preferably designed as a foam element. The elastomer may be formed as a crosslinked silicone rubber, in particular as a crosslinked liquid silicone rubber or as a crosslinked solid silicone rubber, or from a resin. The pressing element 11 is preferably designed in the form of a plate. The pressing element 11 is preferably formed from metal or from mechanically loadable plastic.
Furthermore, the power semiconductor device 1 has a plurality of capacitors 6, the capacitors 6 being conductively connected to the bus bars 5 of the power semiconductor device 1. Each capacitor 6 has capacitance forming means 6a forming its capacitance. For example, when the capacitor 6 is formed as a film capacitor, the capacitance forming means 6a may be composed of two conductive films and one non-conductive film disposed between the two conductive films. The capacitance forming means 6a is conductively connected to conductive capacitor terminals 6c and 6b by conductive connections 6d and 6 e. In the exemplary embodiment, the bus 5 is designed as a DC voltage bus. The bus bar 5 has a conductive positive potential rail (rail)5a and a conductive negative potential rail 5b, which are arranged in an electrically isolated manner from each other by a non-conductive isolation layer 5c (e.g., a plastic film) arranged between the positive potential rail 5a and the negative potential rail 5 b. It is noted that the bus bar 5 may also have, for example, another neutral potential rail and/or an alternative potential rail, which is arranged in an electrically isolated manner from the positive potential rail 5a and the negative potential rail 5 b. The bus bar 5 may have a non-conductive coating for electrical insulation purposes. Conductive busbar connection elements 5a 'and 5b' conductively connected to the busbar extend from said busbar 5 in a direction towards the substrate 3. Preferably, the respective busbar connection elements 5a 'and 5b' are integrally formed with the positive potential rail 5a and the negative potential rail 5b, respectively. The capacitor terminal 6c is conductively connected to the positive potential rail 5a and the capacitor terminal 6d is conductively connected to the negative potential rail 5b, for example by soldering, sintering or welding.
In an exemplary embodiment, the power semiconductor components 4 are conductively connected to each other to form a half-bridge circuit, which may be used, for example, for rectifying and inverting voltages and currents. The power semiconductor device 1 has a capacitor 6 as an electrical energy store, which buffers the DC voltage generated at the power semiconductor device 1. In the exemplary embodiment, the capacitors 6 are thus used as intermediate circuit capacitors, but they may also be used for other purposes.
For mounting the capacitors 6, the power semiconductor device 1 has a capacitor mounting device 8, the capacitor mounting device 8 having cup-shaped receiving devices 8c for receiving the capacitors 6, wherein the respective capacitor 6 is arranged in the respective receiving device 8 c. It is noted that the capacitor mounting device 8 may also have only a single receiving device 8c in which the capacitor 6 is arranged. The capacitor mounting device 8 is preferably formed from plastic, in particular as a plastic injection molded part. The receiving device 8c has a side wall 8b, and the side wall 8b extends from the capacitor mounting device substrate 8a of the capacitor mounting device 8 in a direction toward the bus bar 5, and surrounds the capacitor 6.
The deformation element 10 is arranged between a side 8a' of the capacitor mounting device 8 facing away from the busbar 5 and the pressing element 11. The pressing member 11 and the capacitor mounting device 8 are formed in a plurality of parts. The capacitor mounting device 8 is arranged in such a manner: which is movable relative to the pressing member 11 in the normal direction NT of the substrate 4.
The pressing element 11 is designed to press the capacitor mounting device 8 in the direction towards the busbar 5 by means of the deformation element 10, so that the busbar 5 is pressed in the direction towards the substrate 3, so that the busbar connection elements 5a 'and 5b' are pressed against the conductive conductor tracks 3b 'of the substrate 3, so that the busbar connection elements 5a' and 5b 'are pressed into conductive contact with these conductor tracks 3b' of the substrate 3.
In the present invention, since the pressing member 11 is formed in a plurality of parts with the capacitor mounting device 8, and the pressing force applied to the side 8a' of the capacitor mounting device 8 facing away from the bus bar 5 in the normal direction NT of the substrate 4 by the pressing member 11 is introduced onto the capacitor mounting device 8 by the pressing member 11 in a flush manner with the substrate 3, the capacitor mounting device 8 is not subjected to any high bending force, which may cause mechanical failure of the capacitor mounting device 8 and may therefore result in a reduced life of the power semiconductor device 1.
In the power semiconductor device 1 according to the invention according to fig. 1 and 2, the capacitor 6 is arranged in such a way that it is cast into the receiving device 8c by means of the encapsulating material 7. The encapsulation material 7 is preferably designed as a hard encapsulation material, in particular as an epoxy resin, but can also be designed as a soft encapsulation material, in particular as a silicon encapsulation material.
In the power semiconductor device 1 according to fig. 1, the capacitance forming means 6a is materially connected to the receiving means 8c by means of an encapsulation material 7, wherein the encapsulation material 7 is in mechanical contact with the capacitance forming means 6a and the receiving means 8 c. In this case, the encapsulating material 7 forms a housing of the capacitor 6. The power semiconductor device 1 is therefore designed in a particularly compact manner.
In the power semiconductor device 1 according to fig. 2, the capacitor 6 has a capacitor housing 6e, in which the capacitance forming means 6a are arranged, wherein the capacitor housing 6e is materially connected to the receiving means 8c by means of an encapsulating material 7, wherein the encapsulating material 7 is in mechanical contact with the capacitor housing 6e and the receiving means 8 c. The power semiconductor device 1 can thus be formed using a capacitor having a commercial capacitor case. In this case, the capacitance forming means 6a is preferably arranged in such a way that it is cast into the capacitor housing 6e by means of a further potting material 6 f. Alternatively, the capacitor housing may also be formed from the further encapsulation material itself.
In the power semiconductor device 1 according to fig. 3, the capacitor 6 has a capacitor housing 6e, in which the capacitance forming means 6a are arranged, wherein the capacitor housing 6e is arranged in such a way that it is pressed into the receiving means 8c and is thus connected to the receiving means 8c in a force-fitting manner.
In the power semiconductor device 1 according to the invention according to fig. 1, 2 and 3, the capacitor mounting device 8, in particular the receiving device 8c, in particular the side wall 8b of the receiving device 8c, is preferably supported on the busbar 5 and is in mechanical contact with the busbar 5. The capacitor installation device 8 is thus pressed directly onto the bus bar 5. In the power semiconductor device 1 according to the invention of fig. 1 and 2, the capacitor 6 and the encapsulating material 7 are not in mechanical contact with the busbar 5, so that a gap 12 is formed between the capacitor 6 and the busbar 5 and also between the encapsulating material 7 and the busbar 5. In the power semiconductor device 1 according to fig. 3, the capacitor 6 is likewise not in mechanical contact with the busbar 5, so that a gap 12 is formed between the capacitor 6 and the busbar 5. Thus, in all exemplary embodiments, it presses only the capacitor mounting device 8 (in particular only the receiving device 8c, in particular only the side wall 8b of the receiving device 8c) against the bus bar 5. Therefore, the capacitor 6 or the encapsulating material 7 is not mechanically loaded by the pressure introduced by the pressing element 11, so that the power semiconductor device 1 has a very long lifetime.
The power semiconductor device 1 preferably has a pressure generating device 9, the pressure generating device 9 exerting a pressure D on the pressing element 11 in the direction of the substrate 3, wherein the pressing element 11 thus presses the capacitor mounting device 8 in the direction of the busbar 5 via the deformation element 10. The pressure generating means 9 are preferably designed as at least one screw.
The power semiconductor device 1 preferably has a metal base body 2 a. The substrate 3 is disposed on the base body 2 a. In this case, the substrate 3 can be materially connected to the base body 2a by means of a solder layer or a sintered layer arranged between the base body 2a and the substrate 3. Alternatively, a thermal conductive paste may be disposed between the substrate 3 and the base 2 a. If the base plate 3 is not materially connected to the base body 2a, the base plate 3 presses on the base body 2a and is thus connected to the base body 2a in a force-fitting manner.
In an exemplary embodiment, the pressing element 11 is screwed directly to the base body 2a by means of at least one screw 9. However, the pressing element 11 can also be screwed indirectly to the base body 2a by means of at least one screw 9 via at least one mechanically inserted element.
In an exemplary embodiment, the base body 2a may be, for example, a constituent component of the heat sink 2. The heat sink 2 may have cooling fins 2b or cooling pins, which preferably extend from a base body 2a of the heat sink 2. The radiator 2 can be designed as an air-cooled radiator or as a water-cooled radiator. Alternatively, the basic body 2a can also be designed as a base plate (without cooling ribs 2b or cooling pins) intended to be mounted on a heat sink (for example, an air-cooled heat sink or a water-cooled heat sink).
Of course, features mentioned above in the singular may also be present in the power semiconductor device according to the invention in the form of a plurality, unless mutually exclusive.
It should be noted at this point that the features of the different exemplary embodiments of the invention, as long as they are not mutually exclusive, can of course be combined with one another in any desired manner without departing from the scope of protection of the invention.

Claims (15)

1. A power semiconductor device with a substrate (3), a power semiconductor component (4), an elastically deforming element (10), a pressing element (11), an electrically conductive busbar (5) and a capacitor (6), the power semiconductor component (4) being arranged on the substrate (3) and being electrically conductively connected to the substrate (3), the capacitor (6) being electrically conductively connected to the busbar (5) and having a capacitance forming means (6a), the capacitance forming means (6a) forming the capacitance of the capacitor (6), characterized in that, for mounting the capacitor (6), the power semiconductor device (1) has a capacitor mounting means (8), the capacitor mounting means (8) having a cup-shaped receiving means (8c) for receiving the capacitor (6) and in which the capacitor (6) is arranged, wherein the electrically conductive busbar connection element (5a', 5b ') extend from the busbar (5) in the direction towards the substrate (3), wherein a deformation element (10) is arranged between a side (8a') of the capacitor mounting device (8) facing away from the busbar (5) and a pressing element (11), wherein the pressing element (11) is formed in a plurality of parts with the capacitor mounting device (8), wherein the pressing element (11) is designed to press the capacitor mounting device (8) in the direction towards the busbar (5) by means of the deformation element (10) so as to press the busbar (5) in the direction towards the substrate (3) so as to press the busbar connection element (5a ', 5b') against the electrically conductive conductor tracks (3b ') of the substrate (3) so that the busbar connection element (5a', 5b ') is pressed into electrically conductive contact with these conductor tracks (3b') of the substrate (3).
2. A power semiconductor device according to claim 1, characterized in that the power semiconductor device (1) has a plurality of capacitors (6) which are conductively connected to the bus bar (5), each capacitor (6) having a capacitance forming means (6a), which capacitance forming means (6a) forms the capacitance of each capacitor (6), wherein for mounting the capacitors (6) the power semiconductor device (1) has a capacitor mounting means (8), which capacitor mounting means (8) has a cup-shaped receiving means (8c) for receiving the capacitors (6), wherein each capacitor (6) is arranged in each receiving means (8 c).
3. A power semiconductor device according to claim 1 or 2, characterized in that the capacitor mounting means (8) is supported on the busbar (5) and is in mechanical contact with the busbar (5).
4. A power semiconductor device according to claim 3, characterized in that the receiving means (8c) is supported on the busbar (5) and is in mechanical contact with the busbar (5).
5. A power semiconductor device according to claim 3, characterized in that the capacitor (6) is arranged in such a way that it is cast into the receiving means (8c) by means of an encapsulating material (7).
6. A power semiconductor device according to claim 5, characterized in that the capacitance forming means (6a) is materially connected to the receiving means (8c) by means of an encapsulating material (7), wherein the encapsulating material (7) is in mechanical contact with the capacitance forming means (6a) and the receiving means (8 c).
7. Power semiconductor device according to claim 5, characterized in that the capacitor (6) has a capacitor housing (6e) in which the capacitance forming means (6a) are arranged, wherein the capacitor housing (6e) is materially connected to the receiving means (8c) by means of an encapsulating material (7), wherein the encapsulating material (7) is in mechanical contact with the capacitor housing (6e) and the receiving means (8 c).
8. A power semiconductor device according to claim 5, characterized in that the capacitor (6) and the encapsulating material (7) are not in mechanical contact with the busbar (5).
9. A power semiconductor device according to claim 3, characterised in that the capacitor (6) has a capacitor housing (6e) in which the capacitance forming means (6a) is arranged, wherein the capacitor housing (6e) is arranged in such a way that it is pressed into the receiving means (8 c).
10. A power semiconductor device according to claim 9, characterized in that the capacitor (6) is not in mechanical contact with the bus bar (5).
11. Power semiconductor device according to claim 1 or 2, characterized in that the deformation element (10) has a foam structure and/or is formed of an elastomer.
12. A power semiconductor device according to claim 1 or 2, characterized in that the bus bar (5) has a conductive positive potential rail (5a) and a conductive negative potential rail (5b), which conductive positive potential rail (5a) and conductive negative potential rail (5b) are arranged in an electrically isolated manner from each other by means of a non-conductive isolating layer (5c) arranged between the positive potential rail (5a) and the negative potential rail (5 b).
13. Power semiconductor device according to claim 1 or 2, characterized in that the power semiconductor device (1) has a pressure generating device (9), which pressure generating device (9) exerts a pressure (D) on the pressing element (11) in the direction towards the substrate (3), wherein the pressing element (11) thus presses the capacitor mounting device (8) in the direction towards the bus bar (5) through the deformation element (10).
14. Power semiconductor device according to claim 1 or 2, characterized in that the power semiconductor device (1) has a metallic base body (2a), wherein the substrate (3) is arranged on the base body (2 a).
15. Power semiconductor device according to claim 14, characterized in that the base plate (3) is pressed against the base body (2a) and the base plate (3) is thus connected to the base body (2a) with a force fit.
CN202010071925.0A 2019-02-12 2020-01-21 Power semiconductor device Pending CN111554667A (en)

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DE102009046403B4 (en) * 2009-11-04 2015-05-28 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module in pressure contact technology
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