CN109786341B - Power semiconductor module with switching device and arrangement thereof - Google Patents

Power semiconductor module with switching device and arrangement thereof Download PDF

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Publication number
CN109786341B
CN109786341B CN201811353118.7A CN201811353118A CN109786341B CN 109786341 B CN109786341 B CN 109786341B CN 201811353118 A CN201811353118 A CN 201811353118A CN 109786341 B CN109786341 B CN 109786341B
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China
Prior art keywords
power semiconductor
semiconductor module
substrate
base plate
housing
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CN201811353118.7A
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Chinese (zh)
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CN109786341A (en
Inventor
B·卡克曼
R·波普
M·莱德勒
R·施瓦茨
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Semikron Electronics Co ltd
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Semikron Electronics Co ltd
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    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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Abstract

The invention discloses a power semiconductor module with a switching device and a configuration thereof. The power semiconductor module comprises a base plate, which comprises conductor tracks electrically isolated from each other, a connection means, which is arranged on one conductor track and connected thereto in an electrically conductive manner, a terminal means, which preferably comprises a load terminal and an auxiliary terminal means, and a pressing means, which is arranged movably in the direction of the normal to the base plate, the internal circuit connection of the switching means being provided by the connection means, which pressing means comprise a rigid base element, an elastic pressure body, which protrudes from the base element in the direction of the normal to the base plate, and a spring element or spring elements, which are supported by a fixed abutment fixedly arranged opposite the base plate and which compress the pressure body in the direction of the base plate in the direction of the normal to the base plate, thereby pressing directly or indirectly against the base plate and thus additionally against the switching means.

Description

Power semiconductor module with switching device and arrangement thereof
Technical Field
The invention relates to a power semiconductor module having at least one switching device, which can also form a base unit of a power semiconductor system. An arrangement with such a power semiconductor module is further described.
Background
A power semiconductor module and its arrangement are known from the prior art, as disclosed for example in DE 10 2014 106570a1, wherein the power semiconductor module is provided with a housing, a switching device having a substrate bonded to the housing, a power semiconductor element arranged on the substrate, a connection device, a load terminal device, and a pressing device, which is configured in a movable arrangement relative to the housing. The substrate here comprises a first central communication opening and conductor tracks which are electrically insulated from one another, wherein the power semiconductor element is arranged on one conductor track. The connection device here comprises a first main surface and a second main surface and is constructed with an electrically conductive foil. The pressing device further comprises an elastic pressure body having a second communication opening aligned with the first communication opening and having a first cutout to which a pressure element is fitted in a protruding arrangement, wherein the pressure element applies pressure to a section of the second main surface of the connection device and the section is thus arranged in the direction of the substrate normal within the surface of the power semiconductor element at the protrusion. The first communication opening and the second communication opening are thus configured to accommodate a fixture by means of which the power semiconductor module in the configuration is fastened to the cooling device in an interference fit.
Disclosure of Invention
In view of the above, it is an object of the present invention to provide a power semiconductor module having at least one switching device and a configuration thereof, wherein the pressing of the switching device is performed in a particularly efficient manner.
According to the invention, this object is achieved by a power semiconductor module and arrangement having the following features.
The power semiconductor module according to the invention is configured with a switching device, which comprises a base plate, a connection device, a terminal device (preferably comprising a load terminal and an auxiliary terminal device), and a pressing device which is arranged movably in the normal direction of the base plate, wherein the base plate comprises conductor tracks which are electrically isolated from each other, wherein the power semiconductor element is arranged on one conductor track and is connected thereto in an electrically conductive manner, wherein the internal circuit connection of the switching device is provided by the connection device, wherein the pressing device comprises a rigid base element, an elastic pressure body, and a spring element or spring elements, wherein the elastic pressure body protrudes from the base element in the normal direction of the base plate towards the base plate, and wherein the spring element is supported by a fixed abutment which is fixedly arranged opposite the base plate and presses the pressure body in the direction of the base plate in the normal direction of the base plate so as to press directly or indirectly against the base plate, and thus additionally against the switching device.
The term "fixed abutment" naturally refers to the fully assembled state (i.e. during assembly of a power semiconductor module of this type), which has not been achieved, in particular for a fixed body. By "directly against the substrate" is in particular understood that the pressure is applied substantially directly to the conductor track or any part of the substrate without intervening any other physical object. By "indirectly pressing against the substrate" is in particular understood that the pressure is indirectly applied to the substrate via a physical object, such as a power semiconductor element and/or a connection means.
The spring element is preferably configured as a spiral spring or as a stack of a plurality of spiral springs.
In the case of a plurality of spiral springs, the spiral springs can in particular be combined here to form a unit. In particular, the coil springs may be connected to each other by adhesive bonding or by elastic wrapping.
It is particularly preferred that the base element comprises a positioning element (in particular a sleeve-type positioning element or a stud-type positioning element) on its side remote from the base plate, against which positioning element at least one coil spring is arranged, so as to limit any movement of the coil spring perpendicular to the normal direction, i.e. to limit any movement thereof not in the direction of the spring action. Its specific function is to locate and retain the coil spring relative to the rest of the component without compromising the spring action. Alternatively, or in addition, the abutment may comprise, on its side facing the substrate, a positioning element having substantially the same function, in particular a sleeve-type positioning element or a stud-type positioning element, with respect to which at least one coil spring is arranged. In a particular configuration herein, the abutment is configured as a bolt that passes through both the pressing device and the base plate through a first cutout and a second cutout that are aligned with each other. Thus, the bolt or at least a part of the bolt constitutes the stud.
It is further preferred that the housing encloses the switching means, and preferably also the pressing means, and preferably in a cup-like arrangement. The abutment can thus be constructed as an element of the housing.
The housing may also advantageously comprise a cutout through which the terminal element passes, and wherein a first sealing means is arranged in the cutout, said first sealing means being configured to protect the inner space from splash water.
The above-described housing is not necessarily configured as a housing that encloses the substrate on all sides, according to conventional practices suitable for the field of power semiconductor modules. The housing can also be configured as a skeleton housing, in particular if the power semiconductor modules form elements of a larger system, which in particular comprises a plurality of power semiconductor modules. In this case, only the essential and necessary elements of the housing are constituted, wherein, in particular, no continuous side surfaces are required. Then, the protection of the inner space against splash is not provided by the housing alone, but by other components.
In a preferred configuration, the above-described connection means comprises a foil stack (foil stack) having at least one electrically conductive foil and at least one electrically insulating foil, wherein the electrically conductive foil and the insulating foil are configured in an alternating arrangement. Alternatively, the connecting means may be configured as a metal molding, preferably as a planar metal molding, or as a bonding strip (bonding strip).
The base element may be composed of an insulating material, preferably a synthetic material which is resistant to high temperatures and preferably thermoplastic, in particular polyphenylene sulfide. Alternatively, the base element may also be formed by a metal molding. The elastic pressure body may be composed of an elastomer, preferably a silicone elastomer, in particular a crosslinked liquid silicone.
The arrangement according to the invention is configured with the above-described power semiconductor module having a fixing means and being provided with a fixing device, wherein the fixing device is coupled with the fixing means as a housing element, thereby fastening the power semiconductor module to the fixing body such that the abutment exerts a first pressure on the spring element, and wherein the spring element exerts a second pressure on the base element of the pressing means, whereby the elastic pressure body presses the substrate to the fixing body.
It is further preferred that the second sealing device is arranged between the housing of the power semiconductor module and the fixing body, wherein the fixing body is preferably configured to protect the interior space from splash water.
The fastening body is preferably embodied here as a cooling device.
Of course, features or groups of features described separately (e.g. conductor tracks and power semiconductor elements) may be co-present in a power semiconductor module or arrangement according to the invention if not explicitly or essentially excluded or contradicted by the inventive concept.
It should be understood that the various configurations of the present invention, whether or not they are described in connection with the power semiconductor module or the configuration, may be performed alone or in any desired combination to achieve improvements. In particular, the features shown and described above and below can be used not only in the indicated combinations but also in further combinations or alone without departing from the scope of the invention.
Drawings
Further explanation, advantageous features and characteristics of the present invention emerge from the following description of exemplary embodiments of the invention or of the individual elements thereof, which are schematically illustrated in fig. 1 to 6.
Fig. 1 shows a first configuration of a power semiconductor module according to the invention in a configuration according to the invention.
Fig. 2 shows a section through a non-pressure-loaded pressing device of a power semiconductor module according to the invention.
Fig. 3 shows a second configuration of a power semiconductor module according to the invention in an arrangement according to the invention in an exploded view.
Fig. 4 shows a third configuration of a power semiconductor module according to the invention in a configuration according to the invention.
Fig. 5 and 6 show an arrangement according to the invention in a three-dimensional view, wherein fig. 6 shows a section of fig. 5.
Detailed Description
Fig. 1 shows a first configuration of a power semiconductor module 1 according to the invention in an arrangement 10 according to the invention. A substrate 2 of substantially conventional design according to the prior art is shown, having an insulator 20, which insulator 20 has arranged thereon conductor tracks 22, respectively electrically isolated from each other, the conductor tracks 22 carrying different potentials, in particular load potentials, but also auxiliary potentials, in particular switching and measuring potentials of the switching device, in use. In particular, in a typical half-bridge topology arrangement, three conductor tracks 22 with load potential are shown here.
On the two conductor tracks 22, power semiconductor elements 26 are arranged, respectively, in which case the power switch according to the conventional manner of the prior art is constructed as a separate switch (e.g. MOSFET) or as an IGBT with antiparallel-connected power diodes, as shown here. In this case, the power semiconductor elements 26 are each substance-bonded (preferably by sintering connection) to the conductor tracks 22 in an electrically conductive manner without loss of generality and in a manner conventional according to the prior art.
In this case the internal connection of the switching means is configured by the connection means 3, the connection means 3 comprising a conventional foil laminate 30 according to the prior art. Specifically, the foil laminate 30 connects each power semiconductor element 26 (more specifically, the contact surface of each power semiconductor element 26 on the side remote from the substrate 2) to the conductor tracks 22 on the substrate 2. In a preferred configuration, the foil laminate 30 is locally substance bonded to the contact surface by a sintered connection. Of course, the connections between the power semiconductor elements 26 and between the conductor tracks 22 on the substrate 2 can also be constructed in an equivalent manner. In particular in the case of a pressure-sintered connection, it is advantageous to arrange an insulator 28 at the edge region of the power semiconductor element 26, as shown. The insulator 28 may also be arranged in the gap between the conductor tracks 22. The substrate 2 is arranged on a metal base 24 and substances are bonded thereto, said metal base 24 preferably consisting of copper or a copper alloy. For this purpose, the substrate according to the conventional manner of the prior art may comprise a further metal covering on its side facing the base, which is not shown here.
For the purpose of external electrical connection, the power semiconductor module 1 comprises a load terminal element and an auxiliary terminal element 4, only the load terminal element being shown here. By way of example only, these load terminal elements 4 are constructed as metal mouldings which contact conductor tracks 22 of the base substance bonded to the substrate 2, advantageously again connected by sintering. In this case, the external connection is constructed by means of a threaded connection 40 in a conventional manner according to the prior art. In principle, the elements of the connection device 3 itself can also be configured as load terminal elements or auxiliary terminal elements. Auxiliary terminal elements, such as grid or sensor terminals, may additionally be constructed in a conventional manner according to the prior art.
The power semiconductor module 1 further comprises a housing 6, through which the load terminal element 4 protrudes to the outside, wherein in the respective cutout 610 a first sealing means 62 (which in this case is constructed as a crosslinked silicone gel) is arranged in order to protect the interior of the power semiconductor module 1 from splash water. The edge region of the housing 6 constituting the fixing means 602 is connected to a fixing body (in this case, the fixing body is a cooling means 8, more specifically an air cooling means) by fixing means (in this case, the fixing means is a screw connection). The threaded connection is configured as a screw 82, the fastening means being arranged in a blind hole 80 in the cooling device 8, which blind hole 80 is provided with a thread. Between the soleplate 24 and the cooling device 8, a semi-solid heat conducting layer 800 is arranged, the thickness of which is of the order of about 10 μm. The housing 6 further comprises studs 68 which protrude into associated cutouts in the cooling device 8 and are designed to prevent any rotation of the housing 6 relative to the cooling device 8, in particular on assembly of the power semiconductor module 1 in the context of the arrangement 10.
The pressing device 5 is arranged in the normal direction N of the substrate 2, and is configured to be movable with respect to the substrate 2. The pressing device 5 comprises a base element 50, which base element 50 is constructed to be rigid and in particular to be of a bending-resistant design. For this purpose, it is composed of polyphenylene sulfide which is resistant to high temperatures and is therefore also electrically insulating. The base element 50 comprises a plurality of cutouts on its side facing the base plate 2, wherein in said cutouts elastic pressure bodies 52 are arranged in such a way as to protrude respectively therefrom. The base element 50 also comprises studs 500 on its side remote from the base plate 2, which in this case are formed integrally with the base element and which constitute positioning elements.
A plurality of stacked coil springs 54 and their associated cutouts are arranged on the stud 500 and form the spring element of the pressing device 5. These coil springs 54 are constructed in a movable arrangement to the stud 500 in the normal direction N of the base plate 2. The stud 500 also prevents any lateral displacement (i.e. any movement perpendicular to the normal direction N of the coil springs 54) and in particular also prevents any movement of the individual coil springs relative to each other. In the assembled state of the housing 6 of the power semiconductor module 1, the housing 6 exerts a pressure on the disk spring 54 as an abutment. Thus, by the coil springs 54 of the pressing means 5, their pressure bodies 52 are compressed against the connecting means 3 and the base plate 2 and thus indirectly against the base plate 24, so that there is a significant thermal contact between the base plate 2 and the base plate 24, in particular for the removal of heat from the power semiconductor element 26. The production of this type of pressing device 5, i.e. in particular the arrangement of the elastic pressure body 52 in the base element 50, is preferably performed by a two-component injection molding method. In this case, the elastic pressure body 52 is composed of crosslinked liquid silicone rubber (liquid silicone rubber, LSR). To assemble the power semiconductor module 1, the coil springs 54 are simply arranged to the studs 500.
Fig. 2 shows a section through a non-pressure-loaded pressing device 5 of a power semiconductor module according to the invention. Which differs from the pressing device according to fig. 1 in that the base element 50 (instead of the stud) comprises one or (as not shown here) a plurality of sleeve-shaped positioning elements 502. The sleeve-type positioning element 502 fulfills the same function as the stud-type positioning element according to fig. 1 and is constructed integrally with the base element 50, a plurality of coil springs 54 being arranged in said sleeve-type positioning element 502.
Fig. 3 shows a second configuration of a power semiconductor module 1 according to the invention in an arrangement 10 according to the invention in an exploded view.
The power semiconductor module 1 shown here differs from the power semiconductor module described with reference to fig. 1 mainly in that the power semiconductor module 1 does not comprise a base, and the terminal element 4 is preferably embodied here as a press-fit contact according to conventional designs in the art. Furthermore, without loss of generality, the connecting device 3 is here composed of a plurality of planar metal mouldings 32 in a conventional manner according to the prior art. Between the base plate 2 and the cooling means 8 a semi-solid heat conducting layer 800 is arranged, the thickness of which is of the order of about 5 μm.
In this case, the housing 6 additionally comprises a stud-type positioning element 600 or simply stud, which in principle fulfills the above-described function, i.e. the positioning of a spring element, which is configured as a stack of coil springs 54. The rigid base member 50 of the pressing means 5 comprises a cut-out 504 into which cut-out 504 a stud 600 on the housing 6 protrudes for further assembly to fix the position of the coil spring 54 in any desired position. The pressing device 5 further comprises an additional metal layer, which is configured as a planar metal part 506. Which performs a stabilizing function on the base element 50 and is arranged on its surface remote from the base plate 2.
The pressure cascade (pressure cascade) is formed by the threaded connection 80, 82 of the housing 6 of the power semiconductor module 1 to the cooling device 8. In this case, the housing 6 exerts a first pressure 61 on the spring element 54 of the pressing device 5. The edge region of the housing 6 (which in this case also constitutes the fastening means 602) engages with the cooling means 8. Thus, the housing 6 (in this case, which constitutes an abutment for the pressing means 5) is arranged in a fixed manner with respect to the base plate 2, which base plate 2 is coupled with the upper side of the cooling means 8, which housing 6 is movable with respect to the base plate 2 in its normal direction N for further assembly of the power semiconductor module 1.
The spring element 54 in turn exerts a second pressure 62 on the base element 50, in this case more specifically on the planar metal component 506. The elastic pressure body 52 arranged in the base element 50 exerts a third pressure 63 on the connecting device 3. In this configuration of the power semiconductor module 1, the connection means 3 are materially bonded to the respective power semiconductor element 26. Similarly, the respective power semiconductor element 26 is substance bonded to the substrate 2, more specifically to the relevant conductor track 22 on the substrate 2. By this combination of the connecting means 3, the power semiconductor element 26 and the base plate 2, the fourth pressure 64 is now transferred to the cooling means 8.
The pressure direction of the pressure cascade is oriented in the normal direction N of the substrate 2. This configuration constitutes an excellent choice, but not necessarily the only possible configuration of the pressure cascade, as in this case the contact between the substrate 2 and the cooling device 8 reaches its maximum, the power semiconductor elements 26 being arranged aligned in the normal direction N. The heat generated by the power semiconductor element 26 in use can thus be optimally discharged to the cooling device 8, since the pressure contact at this point (i.e. in the region of the power semiconductor element 26) is at its maximum, thereby creating the most efficient thermal contact.
For good operation, the pressure applied by the pressure body 52 to the substrate 2 needs to be kept constant at different temperatures. This is accomplished by employing a stack of coil springs 54. In general, the pressure exerted by the pressure body 52 increases with increasing temperature. This is counteracted by a coil spring 54 of a suitable design and number, wherein the coil spring 54 compensates for the rise in pressure associated with the temperature rise.
Fig. 4 shows a third configuration of the power semiconductor module 1 according to the invention in the arrangement 10 according to the invention, in which no pressure is introduced. The power semiconductor module 1 differs from the configuration according to fig. 3 in that the power semiconductor module 1 does not necessarily comprise a housing, as shown here. It further differs in the way the pressure is introduced.
The base element 50 of the pressing device 5 and the base plate 2, and if necessary the connecting device 3, respectively, comprise a full-thickness cutout 208 and a cutout 508 in a mutually aligned manner, through which cutout 208 and cutout 508 the bolt 84 passes. The bolt 84 is configured to be coupled in a blind hole 80 in the cooling device 8, the blind hole 80 being aligned with the cutout 208 and the cutout 508 and being secured by threads configured therein.
In this case, the bolts 84 (more specifically, the bolt heads) serve as abutments for applying pressure to the pressing means 5 (more specifically, the uppermost coil spring of the plurality of coil springs 54 arranged in a stack). The first part of the bolt shaft simultaneously constitutes a stud-type positioning element. By the arrangement of the bolts 84, the movement of the coil springs 54 in the direction perpendicular to the normal direction N of the base plate 2 is restricted.
Fig. 5 and 6 show the arrangement 10 according to the invention in a three-dimensional view, wherein fig. 6 shows the cross-section of fig. 5. A holder 8 is shown which is embodied as a cooling device, in this case an air cooling device, and a switching device and a connecting device having a base plate 2 are arranged on the holder 8, the base plate 2 having a plurality of power semiconductor elements. The base plate 2 is pressed by a pressing device having a rigid base element 50, a plurality of elastic pressure bodies and a spring element 54 on the cooling device 8. The power semiconductor module 1 further comprises a load terminal element and an auxiliary terminal element 4.
The pressure is introduced by means of a metal molding which forms a housing 6 of the power semiconductor module 1, which housing 6 encloses the substrate 2 in a cup-shaped arrangement and comprises edges oriented parallel to the surface of the cooling device 8. In the region above the substrate 2, in this configuration, a plurality of full-thickness cutouts 610 are arranged in the housing 6, through which cutouts 610 the load terminal element and the auxiliary terminal element 4 protrude. Between the edges of these cutouts 610 and their associated load terminal element and auxiliary terminal element 4, first sealing means 62 are arranged, which first sealing means 62 are constructed in a conventional manner according to the prior art, preventing splash water from passing through said cutouts 610.
Between the edge of the metal molding 6 and the surface of the cooling device 8, a second sealing device 64 is arranged, which second sealing device 64 is configured to protect the interior space of the power semiconductor module 1 from water splashing at this location.
By means of the first sealing means 62 and the second sealing means 64, the entire interior space of the power semiconductor module 1 is safely protected against splash water in this configuration 10 with the cooling means 8 according to IP 67. The protection level can also be adjusted to different protection levels, including for example IP65 or IP68, by equivalent first and second sealing means, based on the requirements.
By means of the cutouts in the edges constituting the fixing means, fixing means configured as bolts 82 are arranged through cutouts in the corners of the metal molding 6, said bolts 82 fixing the metal molding 6 to the cooling device 8, forming a seal and creating a pressure on the spring element 54 of the pressing means.
All of the above-described elastic pressure bodies 52 in the exemplary embodiments according to fig. 1 to 6 are composed of crosslinked liquid silicone, the base element 50 is composed of polyphenylene sulfide, and the spring element (i.e., the coil spring 54) is made of spring steel.

Claims (17)

1. A power semiconductor module (1), the power semiconductor module (1) having a switching device (100), the power semiconductor module (1) comprising a substrate (2), a connecting device (3), a terminal device (4), and a pressing device (5) which is arranged movably in a normal direction N of the substrate (2),
wherein the substrate (2) comprises conductor tracks (22) which are electrically isolated from each other, wherein the power semiconductor element (26) is arranged on one conductor track (22) and is connected to the conductor track (22) in an electrically conductive manner,
wherein the internal circuit connection of the switching device (100) is provided by the connection means (3),
wherein the pressing device (5) comprises a rigid base element (50), an elastic pressure body (52), and a spring element (54) or a plurality of spring elements (54), wherein the elastic pressure body (52) protrudes from the base element (50) towards the substrate in a normal direction N of the substrate (2), and wherein the spring element (54) is supported by a fixed abutment which is fixedly arranged opposite the substrate (2) and presses the pressure body (52) in the direction of the substrate in the normal direction N of the substrate (2) indirectly or directly against the substrate.
2. The power semiconductor module according to claim 1, characterized in that the spring element (54) is configured as a spiral spring or as a stack of a plurality of spiral springs.
3. A power semiconductor module according to claim 2, characterized in that the base element (50) comprises a positioning element (500, 502) on its side facing away from the base plate (2), with respect to which positioning element (500, 502) at least one coil spring is arranged, so that any movement of the coil spring perpendicular to the normal direction N is limited.
4. A power semiconductor module according to claim 3, characterized in that the positioning element (500, 502) is a sleeve-type positioning element or a stud-type positioning element.
5. A power semiconductor module according to claim 2, characterized in that the abutment comprises a positioning element (600) on the side facing the base plate (2), with respect to which positioning element (600) at least one coil spring is arranged.
6. The power semiconductor module according to claim 5, characterized in that the positioning element (600) is a sleeve-type positioning element or a stud-type positioning element.
7. The power semiconductor module according to claim 2, characterized in that the abutment is configured as a bolt (84), the bolt (84) passing through both the pressing means and the base plate through mutually aligned cutouts (208, 508).
8. A power semiconductor module according to any of the preceding claims, characterized in that a housing (6) encloses the switching device.
9. A power semiconductor module according to claim 8, characterized in that a housing (6) encloses the pressing means.
10. A power semiconductor module according to claim 8, characterized in that the housing (6) is arranged in a cup-like manner.
11. Power semiconductor module according to claim 8, characterized in that the abutment is constructed as an element of the housing (6).
12. A power semiconductor module according to claim 8, characterized in that the housing (6) is composed of a metallic material.
13. The power semiconductor module according to claim 8, characterized in that the housing (6) comprises a cutout (610), the terminal device (4) passing through the cutout (610), and wherein a first sealing device (62) is arranged at the cutout (610), the first sealing device (62) being configured to protect the inner space from splash water.
14. An arrangement (10) with a power semiconductor module (1) according to any of the preceding claims, the arrangement (10) having a securing means (602) and having securing means (82), wherein the securing means (82) is coupled with the securing means (602), the securing means (602) being a housing (6) such that the power semiconductor module (1) is fastened to the securing body (8) such that the abutment exerts a first pressure (60) on the spring element (54), and wherein the spring element (54) exerts a second pressure on the base element (50) of the pressing means (5), whereby the resilient pressure body (52) presses the substrate (2) to the securing body (8).
15. Arrangement (10) according to claim 14, characterized in that a second sealing device (64) is arranged between the housing (6) and the stationary body (8) of the power semiconductor module (1).
16. The arrangement (10) according to claim 15, characterized in that the second sealing means (64) is configured to protect the inner space from splashing.
17. Arrangement (10) according to claim 14 or 15, characterized in that the stationary body (8) is configured as a cooling device.
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DE102020115831B4 (en) 2020-06-16 2024-03-14 Semikron Elektronik Gmbh & Co. Kg Power electronic switching device with a printing device
DE102022101511A1 (en) 2022-01-24 2023-07-27 Semikron Elektronik Gmbh & Co. Kg Performance switching device with optimized pressure plate
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