CN107507814B - Power semiconductor module comprising a switching device - Google Patents
Power semiconductor module comprising a switching device Download PDFInfo
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- CN107507814B CN107507814B CN201710438281.2A CN201710438281A CN107507814B CN 107507814 B CN107507814 B CN 107507814B CN 201710438281 A CN201710438281 A CN 201710438281A CN 107507814 B CN107507814 B CN 107507814B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4338—Pistons, e.g. spring-loaded members
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
- H01L23/4275—Cooling by change of state, e.g. use of heat pipes by melting or evaporation of solids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4093—Snap-on arrangements, e.g. clips
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4075—Mechanical elements
- H01L2023/4087—Mounting accessories, interposers, clamping or screwing parts
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
Abstract
The present invention relates to a power semiconductor module including a switching device. The power semiconductor module comprises a switching device having a substrate, a power semiconductor component and a connection device, wherein the connection device has a first main surface and a second main surface, which face the substrate, and a conductive foil, wherein the second main surface faces away from the substrate, wherein the switching device is internally connected to a suitable circuit system by means of the connection device, wherein the pressure device has a pressure body and a pressure element protruding from the pressure body in the direction of the power semiconductor component, wherein the pressure element presses onto a portion of the second main surface of the connection device and is arranged above a surface of the power semiconductor component facing away from the substrate, aligned in the normal direction of the substrate, wherein the pressure element is formed by an elastic housing in the interior of which a phase change material is arranged.
Description
Technical Field
The present invention relates to a power semiconductor module including a switching device. A power semiconductor device comprising such a power semiconductor module is also described.
Background
DE 10 2014 106 570 A1 discloses a power semiconductor module in the form of a switching device, which comprises a substrate, a power semiconductor component, a connection device, a load connection device, and comprises a pressure device. Here, the substrate has an electrically insulating conductor track (conductor track), in which the power semiconductor components are arranged. The connection device is in the form of a foil/film stack comprising an electrically conductive foil and an electrically insulating film, and has a first main surface and a second main surface. The switching device is internally connected to the appropriate circuitry by means of a connection device. The pressure device has a pressure body comprising a first recess, a pressure element arranged to protrude out of said first recess, wherein the pressure element presses onto a portion of the second main surface of the foil/film laminate, and where, in a projection along the normal direction of the power semiconductor component, this portion is arranged within the surface of the power semiconductor component. The pressure element is entirely composed of silicone rubber. There is a disadvantage in that the silicone rubber has only a low heat absorption capacity. The power semiconductor components are thus cooled above the substrate, substantially above the bottom side thereof, by the cooling device.
DE 10 2014 213 545 A1 discloses the use of phase change materials for cooling power semiconductor components of power semiconductor modules.
It is technically desirable, in particular in the case of high-transient power loads, to additionally cool the power semiconductor components of the power semiconductor module above the upper side thereof.
Disclosure of Invention
Against the background of the above-mentioned conditions, the present invention is based on the object of providing a power semiconductor module whose power semiconductor components are cooled efficiently.
This object is achieved according to the invention by a power semiconductor module comprising a switching device with a substrate, a power semiconductor component arranged on the substrate, and a connection device, and comprising a pressure device designed such that it can be moved in the direction of the normal of the substrate, wherein the substrate has conductor strips which are electrically insulated from one another, wherein the power semiconductor component is arranged on the conductor strips of the substrate and is connected to the substrate in an adhesive and electrically conductive manner, wherein the connection device has a first main surface and a second main surface, which face the substrate and which face away from the substrate, and an electrically conductive foil, wherein the switching device is internally connected to a suitable circuit system by means of the connection device, wherein the pressure device has a pressure body and a pressure element which projects from the pressure body in the direction of the power semiconductor component, wherein the pressure element presses onto a portion of the second main surface of the connection device, and wherein the portion is arranged so as to be aligned in the direction of the substrate above the surface of the power semiconductor component facing away from the substrate, wherein the pressure element is formed by an elastic casing in which the phase change material is arranged.
Advantageous designs of the power semiconductor module can be derived from the dependent claims.
It has been proved that if the phase change material is changedIt is advantageous if the phase transition temperature of the material at which the phase change material changes from its solid state to its liquid state is between 0.1% and 25%, in particular between 0.1% and 10%, in particular between 0.1% and 5%, below the maximum junction temperature of the power semiconductor component that can be allowed during operation of the power semiconductor component 26. In this case, the phase transition temperature of the phase change material and the maximum junction temperature that can be allowed are indicated in ° c. As a result of the above, the junction temperature T of the power semiconductor component is particularly high during operation, for example in the case of brief power peaks j Approaching the maximum allowable junction temperature T of the power semiconductor component jmax In this case, the respective power semiconductor component is additionally cooled by means of the associated pressure element. The maximum junction temperature of the semiconductor component that can be allowed during operation of the power semiconductor component is typically in the temperature range from 150 ℃ to 200 ℃.
It has further proved advantageous if the shell is composed of an elastomer, in particular of silicone rubber, since then the shell has particularly good elastic properties.
In addition, it has proved to be advantageous if the ratio of the volume of the phase change material to the total volume of the pressure element is preferably 10% to 70%, in particular 10% to 50%, because the pressure element is then able firstly to absorb a large amount of thermal energy and secondly to exhibit elasticity at least due to the elastic shell.
Furthermore, it has proved to be advantageous if the phase change material consists of at least one salt hydrate or of at least one organic material, since these are technically customary phase change materials.
In addition, it has proved to be advantageous if the phase change material has a specific melting enthalpy (enthalpi of fusion) of from 80kJ/kg to 300kJ/kg, since the pressure element can absorb a large amount of heat energy in that way.
It has further been demonstrated that: in case there are temperature fluctuations around the phase change temperature in the phase change material, it is advantageous if the change back temperature is at least 5 ℃, in particular at least 10 ℃, below the phase change temperature of the phase change material, because the phase change material does not then frequently change its state from solid to liquid and vice versa, wherein at the change back temperature the temperature phase change material changes from its liquid state to its solid state.
In addition, it has proved to be advantageous if the pressure body has a first recess, the pressure element being arranged so as to protrude beyond said first recess, because the pressure element is then arranged such that it does not move in the transverse direction. The lateral direction extends perpendicular to the normal direction of the substrate.
In this context, it has proved advantageous if the first recess in the pressure body is in the form of a depression from a first main surface of the pressure body, which first main surface faces the substrate, since then the recess is formed in a particularly simple manner.
It has further proved advantageous if the pressure body consists of a high-temperature-resistant thermoplastic material, in particular of polyphenylene sulfide, since then the pressure body can be mechanically loaded even at high temperatures.
It has further proved advantageous if the connection device is in the form of a foil/film laminate comprising at least one electrically conductive foil and comprising at least one electrically insulating film. The design of such a foil/film laminate constitutes the customary design of foil/film laminates.
It has further proved advantageous if the surface area of the portion of the second main surface of the connection device is at least 20%, in particular at least 50%, of the area of that surface of the power semiconductor component which faces away from the substrate, since the pressure acting on the portion of the second main surface of the connection device acts over a relatively large surface in that case.
Furthermore, it has proven to be advantageous if the ratio of the lateral length of the pressure body to the length of the pressure body in the direction of the normal of the substrate is preferably at least 3 to 1, in particular at least 5 to 1, since then the pressure body is of a space-saving design.
Furthermore, it has proven to be advantageous if the mechanical contact region of the housing, at which mechanical contact with the connection device is present, does not protrude beyond the surface of the power semiconductor component facing away from the substrate. As a result, pressure loading of the normally pressure-sensitive boundary edges of the power semiconductor components is avoided.
It has further proved advantageous if the power semiconductor module has fastening means which are designed to fasten the power semiconductor module to the cooling component in a force-fitting manner. As a result, the power semiconductor module can be reliably fastened to the cooling device.
Furthermore, it has proven to be advantageous if the substrate has a central first passage opening, wherein the pressure body has a second passage opening arranged in alignment with the first passage opening, wherein the first passage opening and the second passage opening are designed to receive the fastening means. As a result, the force generated by the fastening means is introduced from the center onto the pressure body.
In addition, it has proved advantageous if a power semiconductor device comprising a power semiconductor module according to the invention, which comprises a cooling component, and comprising fastening means which are designed to fasten the power semiconductor module on the cooling component in a press-fit manner, wherein the fastening means introduce a force onto the pressure component in the direction of the cooling component and, as a result, connect the substrate to the cooling component in a press-fit manner.
In addition, it has proved advantageous if the cooling device is in the form of a metal substrate intended to be mounted on a heat sink, or in the form of a heat sink, since these constitute the customary design of the cooling device.
Drawings
Exemplary embodiments of the invention will be described with reference to the following drawings, in which:
fig. 1 shows a cross-sectional view of a power semiconductor device comprising a power semiconductor module according to the invention, which comprises a cooling device and comprises fastening means, an
Fig. 2a-2d show plan views of cross sections of a switching device of a power semiconductor module according to the invention in various cross-sectional planes.
Detailed Description
Fig. 1 shows a first refinement (refinement) of a power semiconductor module 1 according to the invention, which comprises a switching device 10. The figure shows a substrate 2 (e.g. a direct copper-clad substrate) formed in a manner substantially conventional in the art, the substrate 2 having an insulating material body 20 and conductor strips 22 arranged thereon, the conductor strips 22 each being electrically insulated from each other and capable of having different potentials, in particular load potentials, of the switching device 10 during operation, but also having auxiliary potentials, in particular control and measurement potentials. In particular, three conductor strips 22 with a load potential as the load potential of a typical half-bridge topology are shown here. The substrate 2 has a centrally arranged first passage opening 24.
On the two conductor tracks 22, respective power semiconductor components 26 are arranged, which can be in the form of MOSFETs, IGBTs or in the form of diodes, for example. The power semiconductor component 26 is electrically conductively connected to the conductor strip 22 in a manner conventional in the art, preferably by means of a sintered connection.
The internal electrical connection of the switching device 10 is formed by means of a connection device 3, which connection device 3 in the simplest case consists of a conductive foil 30 forming separate conductor strip portions which are not connected to one another, either mechanically or electrically. These conductor strip sections connect in particular the respective power semiconductor component 26, more precisely the contact region of said power semiconductor component on the side facing away from the substrate 2, to the conductor strip 22 of the substrate 2.
The connection device 3 is preferably in the form of a foil/film laminate comprising at least one electrically conductive foil 30 or 32 and comprising at least one electrically insulating film 31. At least one of the conductive foils 30, 32 of the connection device 3 is inherently patterned and thus forms a conductor strip portion which is electrically insulated from each other. If there are a plurality of conductive foils, an electrically insulating film is arranged between these conductive foils, respectively.
The foils/films of the foil/film laminate are preferably connected to each other, in particular adhesively.
Within the scope of the exemplary embodiment, the foil/film composite 3 has two electrically conductive foils 30 and 32 and an electrically insulating film 31 arranged between them. In particular, the conductive foils 30 and 32 of the connection device 3 are inherently patterned and thus form conductor strip portions that are electrically insulated from each other.
The connection device 3 has a first main surface 300 and a second main surface 320, the first main surface 300 facing the substrate 2 and the second main surface 320 facing away from the substrate 2. The switching device 10 is connected internally to suitable circuitry by means of the connection device 3. The conductor strip portion of the connection means 3 connects in particular the respective power semiconductor component 26, more precisely the contact region on the side of the power semiconductor component facing away from the substrate 2, to the conductor strip 22 of the substrate 2. In a preferred refinement, the conductor strip portion is adhesively connected to the contact region of the power semiconductor component 26 by means of a sintered connection. It goes without saying that connections can likewise be formed between the power semiconductor components 26 and also between the conductor tracks 22 of the substrate 2. In particular in the case of pressure-sintered connections, it is advantageous to arrange an electrically insulating block 28 at the boundary region of the power semiconductor component 26. It is also possible to arrange insulating blocks 28 in the intermediate spaces between the conductor strips 22. The surface of the foil 30 facing the substrate 2 forms in the exemplary embodiment a first main surface 300, while the opposite surface of said foil 32 facing away from the substrate 2 forms a second main surface 320. If the connection device 3 is constituted by only one conductive foil 30, the first main surface 300 is formed by that surface of the foil 30 which faces the substrate 2 and the second main surface 320 is formed by that surface of the foil 30 which faces away from the substrate 2.
For the purpose of external electrical connection, the power semiconductor module 1 has a load and an auxiliary connection element, of which only the load connection element 4 is shown here. These load connection elements 4 are, by way of example only, in the form of shaped metal bodies which are connected to the conductor strip 22 of the substrate 2 by means of contact pins in an adhesive manner, also advantageously by means of a sintered connection.
In addition, the power semiconductor module 1 has a housing 6 which is connected to the substrate 2, in particular by means of an adhesive connection. The load connection element 4 protrudes through the housing 6 and here forms a load contact means 40 for electrical contacting to be made by an external power line element, such as a busbar or a cable.
The power semiconductor module 1 has a pressure means 5, which pressure means 5 has a pressure body 50 and a pressure element 52 which projects from the pressure body 50 in the direction of the power semiconductor component 26. Within the scope of the exemplary embodiment, the pressure body 50 has a first recess 504, a pressure element 52 which is arranged so as to protrude out of said first recess in each case, wherein the pressure element presses onto a portion 322 of the second main surface 320 of the connection device 3, and here this portion 322 is arranged aligned in the normal direction N of the substrate 2 above a surface 26a of the power semiconductor component 26 facing away from the substrate 2. In a projection along the normal direction N of the substrate 2, the portion 322 is preferably arranged within that surface 26a of the power semiconductor component 26 which faces away from the substrate 2.
In the simplest case, the pressure element 52 can be pressed onto the portion 322 of the second main surface 320 of the connection device 3 by the pressure force required for this purpose, which presses the pressure device 5 onto the portion 322 of the second main surface 320 of the connection device 3 when the pressure device 5 is arranged above the connection device 3 with reference to the center of the earth. Therefore, it is not absolutely necessary that the fastening means 7 and the cooling device 8 are present to generate the pressure.
The first recess 504 in the pressure body 50 is preferably in the form of a depression starting from a first main surface 500 of the pressure body 50, which first main surface faces the substrate 2.
The surface area of the portion 322 of the second main surface 302 of the connection device 3 is at least 20%, in particular at least 50%, of that surface 26a of the power semiconductor component 26 which faces away from the substrate 2.
The pressure body 50 has a first main surface 500 and a second main surface 502, the first main surface 500 facing the substrate 2 and the second main surface 502 facing away from the substrate 2. The pressure body 50 is preferably of rigid design in order to be able to transmit the pressure introduced into the pressure body 50 to the pressure element 52 in a uniform manner. For this purpose and against the background of thermal loading during operation of the power semiconductor module 1, the pressure body 50 is preferably composed of a high-temperature-resistant thermoplastic material, in particular of polyphenylene sulfide.
The ratio of the lateral length of the pressure body 50 to the length of the pressure body 50 in the normal direction N of the substrate 2 is preferably at least 3 to 1, in particular at least 5 to 1.
According to the invention, the pressure element 52 is constituted by an elastic shell 52', in the interior of which a phase change material 52' is arranged. Phase change materials have a high specific melting enthalpy and are therefore able to absorb high levels of thermal energy during the transition from their solid state to their liquid state (phase transition) at the phase transition temperature. Phase change materials for different phase change temperatures are commercially available and are used in a manner customary in the art, for example from materials such as M n H 2 Salt hydrates of O, or, for example, from compounds such as paraffins (e.g. C) n H 2n+2 ) Or fatty acids (e.g. CH) 3 (CH 2 ) 2n COOH) is selected as the organic material. The phase change material used can also be, for example, mgCl 2 x 6H 2 And O. Due to the elasticity of the housing 52', the pressure element 52 is able to deform when it is pressed and thus to adapt to the contour of the portion 322 of the second main surface 320 of the connection device 3 and thus indirectly to the contour of that surface 26a of the power semiconductor component 26 which faces away from the substrate 2, so that the pressure exerted by the pressure element 53 on the power semiconductor component 26 is distributed uniformly over the surface 26a of the power semiconductor component 26 and thus no local pressure peaks are formed which could lead to damage to the power semiconductor component 26. The shell 52' is preferably made of an elastomer, in particular silicone rubber. The pressure element 52 can be manufactured, for example, by a shell of openings at one point filled with phase change material, and then welding the openings in the shell.
The phase change temperature of the phase change material is preferably at the maximum junction temperature T of the power semiconductor component 26 jmax 0.1% to 25%, in particular 0.1% to 10%, in particular 0.1% to 5%, below, the maximum junction temperature T jmax Is the power semiconductor componentThe junction temperature that can be allowed during operation of the power semiconductor component 26 and is indicated by the manufacturer of the power semiconductor component 26, for example in a data table. As a result, the junction temperature T of the power semiconductor component 26 is particularly high during operation, for example in the case of brief power peaks j Approaching the maximum allowable junction temperature T of the power semiconductor component 26 jmax In this case, the respective power semiconductor component 26 is additionally cooled by means of the pressure element 52. In the case of most power semiconductor components 26, the maximum junction temperature of the semiconductor component 26 that can be allowed during operation of the power semiconductor component 26 lies in a temperature range from 150 ℃ to 200 ℃, and in particular 150 ℃ or 175 ℃.
Since the pressure element is capable of firstly absorbing a large amount of thermal energy and secondly at least due to the elastic shell exhibiting elasticity, the ratio of the volume of the phase change material to the total volume of the pressure element is preferably 10% to 70%, in particular 10% to 50%.
The phase change material preferably has a specific melting enthalpy of from 80kJ/kg to 300 kJ/kg.
In the case of temperature fluctuations around the phase transition temperature in the phase change material, the transition back temperature at which the phase change material changes from its liquid state to its solid state to below the phase transition temperature of the phase change material is preferably at least 5 ℃, in particular at least 10 ℃, because the phase change material does not then frequently change its state from a solid to a liquid and vice versa. Further, if the power semiconductor component is at a high temperature during operation, the power semiconductor component is not additionally heated by heat emitted by the phase change material during the transition from its liquid state to its solid state.
The pressure body 50 of the pressure device 5 preferably has a metal insert 56, which metal insert 56 is preferably arranged in a second recess 506 in the pressure body 50 on the second main surface 502 of the pressure device 5. The pressure body 5 preferably has a second passage opening 54.
The housing 6 preferably has a third passage opening 64, the third passage opening 64 being arranged such that it is aligned with the first and second passage openings 24, 54. The screws are arranged as fastening means 7 such that they pass through these passage openings, are screwed into the cooling component 80 or 82 by means of the housing 6, more precisely by means of the housing cover 6' and the substrate 2, and thus exert a pressure on the pressure component 5, are pressed onto the cooling component 80 or 82 by means of the pressure component 5 and the connection component 3 precisely at those points where the power semiconductor assemblies 26 are arranged, and thus connect the substrate 2 and the cooling component 80 or 82 in a press-fit manner. It should be noted that the fastening means 7 or the screw 7 can normally also apply pressure directly onto the pressure device 5, so that the pressure element 52 presses onto the portion 322 of the second main surface 320 of the connection device 3. This can be achieved, for example, by: by the third channel opening 64 being designed with a corresponding size such that the head of the screw 7 passes through the third channel opening 64, or by the housing cover 6' being fundamentally dispensed or designed in some other way than that shown in fig. 1.
Thus, in summary, it should be noted that the fastening means 7 or the screw 7 can apply pressure to the pressure means 5 indirectly (by means of the at least one insert element) or directly, so that the pressure element 52 presses onto the portion 322 of the second main surface 320 of the connection means 3.
The pressure body 50 of the pressure means 5 distributes the pressure uniformly over the pressure element 52, wherein the pressure element 52 presses in a uniform manner for its part onto the part 322 of the second main surface 320 of the connection means 3. The portions 322 of the second main surface 320 of the connection device 3 which are subjected to the action of the pressure are preferably selected in such a way that they are arranged, as seen in the normal direction N of the substrate 2, within the surface 26a of the respective power semiconductor component 26 facing away from the substrate 2. The pressure element 52 is thus pressed by means of the connecting component 3 onto the respective power semiconductor component 26 in such a way that it presses the power semiconductor component, more precisely the substrate 2 located therebelow, onto the cooling component 80 or 82, and thus the thermal contact from the power semiconductor component 26 to the cooling component 80 or 82 is optimal.
As a result of the introduction of pressure onto the elastic pressure element 52, it can be deformed, wherein here the transverse length of the elastic pressure element can also be increased. A thermally conductive layer, such as a thermally conductive paste 800, can be disposed between the substrate 2 and the cooling device 82 or 80.
Within the scope of the present exemplary embodiment, the cooling device is in the form of a heat sink 82. The cooling device is shown in fig. 1 by way of example as a heat sink 82 for air cooling, but it can similarly be in the form of a heat sink for liquid cooling. The heat sink 82 has a metal base plate 80 extending from cooling fins 80a or cooling pins 80 a. Then, as an alternative, the cooling device may also be designed only in the form of the metal substrate 80. In this case, the metal substrate 80 is intended to be mounted on a heat sink (e.g., an air sink or a water sink).
Fig. 2a-2d show plan views of the switching device 10 in different cross-sectional planes. The sectional plane according to fig. 2a shows two power semiconductor components 26 arranged (in a manner not illustrated) on a common conductor strip 22 or on different conductor strips 22 of the substrate 2. Without limiting the general texture, the power semiconductor component is here a transistor comprising a central gate connection region 90 and an emitter connection region 91, the emitter connection region 91 comprising a surrounding said central gate connection region; and a diode including a cathode connection region 92.
Fig. 2b shows a first intrinsically patterned conductive foil 30 of the connection device 3. Said first intrinsically patterned conductive foil forms an electrically conductive connection between the emitter connection region 91 of the transistor and the cathode connection region 91 of the diode. Here the gate connection region 90 of the transistor is omitted.
Fig. 2c shows a second intrinsically patterned conductive foil 32 of the connection device 3. Said second inherently patterned conductive foil forms an electrically conductive connection to the gate connection region 90 of the transistor.
Fig. 2d shows a mechanical contact region 70 of the pressure element 52 on the connection device 3 (not shown) associated with the power semiconductor component 26, more precisely the housing 52' of said pressure element, wherein preferably only one pressure element 52 is associated with a transistor due to its square basic shape and two pressure elements 52 are associated with a diode due to its rectangular basic shape.
The mechanical contact region 70 of the housing 52', which exhibits mechanical contact with the connection device 3, preferably does not protrude beyond the surface 26a of the power semiconductor component 26 facing away from the substrate 2. As a result, pressure loading of the normally pressure-sensitive boundary edges of the power semiconductor components 26 is avoided.
It goes without saying that features mentioned in the singular, in particular power semiconductor components and connection devices, can also be present in the power semiconductor module according to the invention in the majority, as long as this is not excluded per se. In particular, a plurality of power semiconductor components can be arranged on one or more conductor tracks of the substrate.
This should be noted that the features of the different exemplary embodiments of the present invention can of course be combined with each other as desired, as long as the features are not mutually exclusive.
Claims (20)
1. A power semiconductor module comprising a switching device and comprising a pressure device,
the switching device has: a substrate, a power semiconductor component arranged on the substrate, and a connection device,
the pressure device is designed such that it can be moved in the direction of the normal of the substrate,
wherein the substrate has conductor strips electrically insulated from each other,
wherein the power semiconductor component is arranged on a conductor strip of the substrate and is adhesively and electrically conductively connected to the substrate,
wherein the connection device has a first main surface facing the substrate and a second main surface facing away from the substrate, and a conductive foil,
wherein the switching device is internally connected with suitable circuitry by means of the connecting device,
wherein the pressure device has a pressure body and a pressure element protruding from the pressure body in the direction of the power semiconductor component,
wherein the pressure element presses onto a portion of the second main surface of the connection device and is arranged here above a surface of the power semiconductor component facing away from the substrate in such a way that it is aligned in the direction of the normal of the substrate,
wherein the power semiconductor module has a fastening device which is designed to fasten the power semiconductor module to a cooling component in a press-fit manner, and
wherein the pressure element is constituted by an elastic shell, inside which a phase change material is arranged.
2. The power semiconductor module of claim 1,
the phase transition temperature of the phase change material is as follows: 0.1% to 25% below the maximum junction temperature of the power semiconductor component allowed during operation of the power semiconductor component,
wherein at the phase transition temperature the phase change material changes from its solid state to its liquid state.
3. The power semiconductor module of claim 2,
the maximum junction temperature of the power semiconductor component that can be allowed during operation of the power semiconductor component lies in a temperature range from 150 ℃ to 200 ℃.
4. The power semiconductor module of any one of claims 1-3,
the shell is composed of an elastomer.
5. The power semiconductor module of any one of claims 1-3,
the volume ratio of the phase change material is 10% to 70% of the total volume of the pressure element.
6. The power semiconductor module of any one of claims 1-3,
the phase change material is composed of at least one salt hydrate or at least one organic material.
7. The power semiconductor module of any one of claims 1-3,
the phase change material has a specific melting enthalpy of from 80kJ/kg to 300 kJ/kg.
8. The power semiconductor module of any one of claims 1-3,
the change-back temperature is at least 5 c below the phase transition temperature of the phase change material,
wherein at the transition back temperature the phase change material changes from its liquid state to its solid state.
9. The power semiconductor module of any one of claims 1-3,
the pressure body has a first recess, the pressure element being arranged so as to protrude out of the first recess.
10. The power semiconductor module of claim 9,
the first recess in the pressure body is in the form of a depression from a first main surface of the pressure body, which first main surface faces the substrate.
11. The power semiconductor module of any one of claims 1-3,
the pressure body is made of a high-temperature-resistant thermoplastic material.
12. The power semiconductor module of any one of claims 1-3,
the mechanical contact region of the housing does not protrude beyond that surface of the power semiconductor component which faces away from the substrate,
wherein the mechanical contact region exhibits mechanical contact with the connection device.
13. The power semiconductor module of claim 1,
the phase transition temperature of the phase change material is: 0.1% to 10% below the maximum junction temperature of the power semiconductor component allowable during operation of the power semiconductor component,
wherein at the phase transition temperature the phase change material changes from its solid state to its liquid state.
14. The power semiconductor module of claim 1,
the phase transition temperature of the phase change material is: 0.1% to 5% below the maximum junction temperature of the power semiconductor component allowable during operation of the power semiconductor component,
wherein at the phase transition temperature the phase change material changes from its solid state to its liquid state.
15. The power semiconductor module of any one of claims 1-3,
the shell is composed of silicone rubber.
16. The power semiconductor module of any one of claims 1-3,
the volume ratio of the phase change material is 10% to 50% of the total volume of the pressure element.
17. The power semiconductor module of any one of claims 1-3,
the change-back temperature is at least 10 c below the phase transition temperature of the phase change material,
wherein at the transition back temperature the phase change material changes from its liquid state to its solid state.
18. The power semiconductor module of any one of claims 1-3,
the pressure body is made of polyphenylene sulfide.
19. A power semiconductor device comprising a power semiconductor module according to one of the preceding claims, the power semiconductor device comprising a cooling device and comprising fastening means,
the fastening means are designed to fasten the power semiconductor module on the cooling device in a press-fit manner,
wherein the fastening means introduce a force onto the pressure means in the direction of the cooling means and thereby connect the substrate to the cooling means in a press-fit manner.
20. The power semiconductor device of claim 19,
the cooling device is in the form of a metal substrate intended to be mounted on a heat sink or in the form of a heat sink.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102016110912.6A DE102016110912B4 (en) | 2016-06-14 | 2016-06-14 | Power semiconductor module with a switching device |
| DE102016110912.6 | 2016-06-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107507814A CN107507814A (en) | 2017-12-22 |
| CN107507814B true CN107507814B (en) | 2023-03-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710438281.2A Active CN107507814B (en) | 2016-06-14 | 2017-06-12 | Power semiconductor module comprising a switching device |
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| DE102018110132B3 (en) * | 2018-04-26 | 2018-11-29 | Semikron Elektronik Gmbh & Co. Kg | Pressure sintering method in which power semiconductor devices are connected to a substrate via a sintered connection |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020070445A1 (en) * | 2000-06-29 | 2002-06-13 | Advanced Micro Devices, Inc. | Enveloped thermal interface with metal matrix components |
| CN104157635A (en) * | 2013-05-14 | 2014-11-19 | 赛米控电子股份有限公司 | Power semiconductor module and systems with the same |
| CN104157622A (en) * | 2013-05-14 | 2014-11-19 | 赛米控电子股份有限公司 | Electronic power switching device and arrangement structure with the same |
| CN105097716A (en) * | 2014-05-09 | 2015-11-25 | 赛米控电子股份有限公司 | Power semiconductor module with switching device and assembly |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014213545A1 (en) | 2014-07-11 | 2015-04-23 | Siemens Aktiengesellschaft | The power semiconductor module |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020070445A1 (en) * | 2000-06-29 | 2002-06-13 | Advanced Micro Devices, Inc. | Enveloped thermal interface with metal matrix components |
| CN104157635A (en) * | 2013-05-14 | 2014-11-19 | 赛米控电子股份有限公司 | Power semiconductor module and systems with the same |
| CN104157622A (en) * | 2013-05-14 | 2014-11-19 | 赛米控电子股份有限公司 | Electronic power switching device and arrangement structure with the same |
| CN105097716A (en) * | 2014-05-09 | 2015-11-25 | 赛米控电子股份有限公司 | Power semiconductor module with switching device and assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102016110912A1 (en) | 2017-12-14 |
| CN107507814A (en) | 2017-12-22 |
| DE102016110912B4 (en) | 2018-03-08 |
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