CN107507814A - Power semiconductor modular including switching device - Google Patents
Power semiconductor modular including switching device Download PDFInfo
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- CN107507814A CN107507814A CN201710438281.2A CN201710438281A CN107507814A CN 107507814 A CN107507814 A CN 107507814A CN 201710438281 A CN201710438281 A CN 201710438281A CN 107507814 A CN107507814 A CN 107507814A
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- power semiconductor
- substrate
- pressure
- semiconductor modular
- main surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4338—Pistons, e.g. spring-loaded members
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
- H01L23/4275—Cooling by change of state, e.g. use of heat pipes by melting or evaporation of solids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4093—Snap-on arrangements, e.g. clips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4075—Mechanical elements
- H01L2023/4087—Mounting accessories, interposers, clamping or screwing parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
Abstract
The present invention relates to the power semiconductor modular including switching device.The power semiconductor modular includes switching device and including pressure device,The switching device has substrate,Power semiconductor assembly and interface unit,Wherein,Interface unit has the first main surface and the second main surface and conductive foil,First main surface faces the substrate,Second main surface is departing from the substrate,Wherein,Switching device is internally connected by interface unit with suitable circuit system,Wherein,Pressure device has pressure body and the pressure elements protruded on the direction of power semiconductor assembly from pressure body,Wherein,Pressure elements is pressed on the part on the second main surface of the interface unit,And the part is alignedly disposed in the top on the surface departing from substrate of power semiconductor assembly in the normal direction of the substrate herein,Wherein,Pressure elements is made up of elastic container,Phase-change material is disposed with the inside of the elastic container.
Description
Technical field
The present invention relates to a kind of power semiconductor modular including switching device.Also describe a kind of including this power half
The power semiconductor of conductor module.
Background technology
The A1 of DE 10 2,014 106 570 disclose a kind of power semiconductor modular in the form of switching device, and it is wrapped
Substrate, power semiconductor assembly, interface unit, coad connector part are included, and including pressure device.Here, substrate has electricity
Insulated electric conductor band (conductor track), wherein arranging power semiconductor assembly on conductor band.Interface unit is to include leading
The form of the paper tinsel of electric paper tinsel and electrical insulating film/film layer overlapping piece, and there is the first main surface and the second main surface.By means of connector
Part, switching device is internally connected with suitable circuit system.Pressure device have include the first recess pressure main body,
The pressure elements to be highlighted from first recess is arranged to, wherein pressure elements is pressed into the of paper tinsel/film layer overlapping piece
On the part on two main surfaces, and here, in the projection along the normal direction of power semiconductor assembly, this part is by cloth
Put in the surface of power semiconductor assembly.What pressure elements was made up of silicon rubber completely.Here have one disadvantage in that and be silicon rubber
Glue only has low-heat absorptive capacity.Therefore, above substrate, the top generally in its bottom side, come by cooling device
Cooling power semiconductor subassembly.
The A1 of DE 10 2,014 213 545 disclose the power for cooling power semiconductor module using phase-change material
Semiconductor subassembly.
Technically desirably particularly in the case where high transient power loads, the top on the upside of it additionally cools down
The power semiconductor assembly of power semiconductor modular.
The content of the invention
For the background of above-mentioned condition, the present invention is the work(being effectively cooled based on a kind of its power semiconductor assembly of offer
The purpose of rate semiconductor module.
According to the present invention, this purpose is obtained by a kind of power semiconductor modular, the power semiconductor modular includes
Switching device with substrate, the power semiconductor assembly and interface unit arranged on substrate, and including being designed to make
Its pressure device that can be moved in the normal direction of substrate is obtained, wherein, substrate has the conductor band being electrically insulated from each other, wherein
Power semiconductor assembly is disposed on the conductor band of the substrate and is connected to substrate in a manner of bonding and be conductive, wherein
Interface unit has the first main surface and the second main surface and conductive foil, and the first main surface faces substrate, the second main surface back of the body
From in the substrate, wherein, switching device is internally connected by interface unit with suitable circuit system, wherein, pressure
Device has pressure body and the pressure elements protruded on the direction of power semiconductor assembly from pressure body, wherein, pressure elements
It is pressed on the part on the second main surface of interface unit, and here, the part is arranged in power semiconductor assembly
It is aligned departing from the top on the surface of the substrate in the normal direction of substrate, wherein, pressure elements is made up of elastic container
, it is disposed with phase-change material in the inside of the elastic container.
The expedients of the power semiconductor modular can be obtained from appended claims.
Have been proven that if the phase transition temperature of phase-change material is partly led in the power semiconductor assembly in the power
It is 0.1% to 25% under maximum-junction temperature that can allow during the operation of body component 26, particularly 0.1% to 10%, special
It is not 0.1% to 5%, then is favourable, wherein, in the phase transition temperature, phase-change material is from its solid state change into its liquid.At this
In the case of kind, with DEG C phase transition temperature of instruction phase-change material and maximum-junction temperature can be allowed.As more than result, especially when
During operation, such as in the case of of short duration power peak, the junction temperature T of power semiconductor assemblyjClose to power semiconductor assembly
The maximum-junction temperature T that can allowjmaxWhen, additionally cool down corresponding power semiconductor subassembly by the pressure elements of association.
The maximum-junction temperature that can allow during the operation of power semiconductor assembly of semiconductor subassembly be usually located at from 150 DEG C to
In 200 DEG C of temperature range.
It has been further demonstrated that, as shell is made up of elastomer, be particularly made up of silicon rubber, be then favourable
, because the shell has especially good resilient property at that rate.
In addition, it has been demonstrated that if the ratio of the cumulative volume of the volume of phase-change material and pressure elements is preferably 10%
To 70%, particularly it is 10% to 50%, is then favourable, because pressure elements can absorb a large amount of heat energy first at that rate
And secondly show the elasticity at least due to elastic container.
In addition, it has been demonstrated that if that phase-change material is made up of at least one salt hydrate or by least one organic material
What material was formed, then be favourable, because these are technically usual phase-change materials.
In addition, it has been demonstrated that if phase-change material has the specific fusion enthalpy from 80kJ/kg to 300kJ/kg
(enthalpy of fusion), then be favourable, because pressure elements can absorb substantial amounts of heat energy at that rate.
Further demonstrate：In the case of existing in phase-change material around the temperature fluctuation of phase transition temperature, such as
It is at least 5 DEG C, especially at least 10 DEG C under the phase transition temperature of phase-change material that fruit, which becomes temperature again, then is favourable, because
Its state is not continually changing into liquid by phase-change material from solid at that time, and vice versa, wherein, in the change
Degree of rising again, phase transition temperature material are changing into its solid-state from its liquid.
In addition, it has been demonstrated that if pressure body has the first recess, pressure elements is arranged to be projected into
State outside the first recess, be then favourable, because pressure elements is arranged such that it not in a lateral direction at that rate
It is mobile.Horizontal direction extends perpendicular to the normal direction of substrate.
In this context, it has been demonstrated that if the first recess in pressure body is to be led from the first of pressure body
The concave form that surface starts, then it is favourable, wherein, the first main surface faces substrate, because at that rate then can be with spy
Not simple mode forms recess.
Further demonstrate what if pressure body was made up of resistant to elevated temperatures thermoplastic, particularly by polyphenylene sulfide
Form, be then favourable, even if because at that rate being capable of mechanically on-load pressure main body at high temperature.
If it is in the form of paper tinsel/film layer overlapping piece to have further demonstrated interface unit, the paper tinsel/film layer overlapping piece is included extremely
Lack a conductive foil and including at least one electrical insulating film, be then favourable.The structure paper tinsel of this paper tinsel/film layer overlapping piece/
The conventional design of film layer overlapping piece.
If the surface area for having further demonstrated the part on the second main surface of interface unit is power semiconductor
At least the 20% of the area on that surface departing from the substrate of component, especially at least 50%, then it is favourable, because
The pressure for acting on the part on the second main surface of interface unit then acts on relatively large surface at that rate.
In addition, it has been demonstrated that if the lateral length of pressure body and length of the pressure body in the normal direction of substrate
Ratio is preferably at least 3 to 1, especially at least 5 to 1, then is favourable, because pressure body is section space-efficient at that rate
Design.
In addition, it has been demonstrated that if the mechanical contact region of shell do not project past power semiconductor assembly departing from institute
The surface of substrate is stated, then is favourable, wherein, show the Mechanical Contact with interface unit in the mechanical contact region.As
As a result, the pressure-loaded of the usual pressure-sensitive boundary edge of power semiconductor assembly is avoided.
If having further demonstrated power semiconductor modular has fastener, fastener is designed to be pressed into
The power semiconductor modular is fastened on cooling device by (force-fitting) mode of cooperation, is favourable.As knot
Fruit, power semiconductor modular can be reliably fastened to cooling device.
In addition, it has been demonstrated that if substrate has center first passage opening, wherein, pressure body has and first passage
The second channel opening of opening alignment arrangement, wherein, first passage opening and second channel opening are designed to receive fastening dress
Put, be favourable.As a result, the power generated by fastener is incorporated on pressure body from center.
In addition, it has been demonstrated that the power semiconductor including the power semiconductor modular according to the present invention is favourable
, the power semiconductor modular includes cooling device and is designed to including fastener, the fastener with press-in cooperation
The power semiconductor modular is fastened on cooling device by mode, wherein, fastener is on the direction of cooling device by power
It is incorporated on the pressure device, and as a result, the substrate is connected to the cooling device in a manner of press-in cooperation.
In addition, it has been demonstrated that if cooling device is in the form of the metal substrate for being intended to be arranged on heat sink, or
Then it is favourable in the form of heat sink, because these constitute the conventional design of the cooling device.
Brief description of the drawings
The exemplary embodiment of the present invention will be illustrated with reference to the following drawings, in the accompanying drawings：
Fig. 1 shows the section view for including the power semiconductor of the power semiconductor modular according to the present invention, the work(
Rate semiconductor module includes cooling device and including fastener, and
Fig. 2 shows the plane in the section of the switching device of the power semiconductor modular according to the present invention with various sectional planes
View.
Embodiment
Fig. 1 shows the first refinement of the power semiconductor modular 1 including switching device 10 according to the present invention
(refinement).The substrate 2 that the accompanying drawing shows to be formed in a manner of basic routine in this area is (for example, direct copper serves as a contrast
Bottom), the substrate 2 has insulating material body 20 and the conductor band 22 arranged on the insulating material body, conductor band 22 and that
This electric insulation and the different potentials can with switching device 10 during operation, particularly, loaded level, but also have auxiliary
Current potential is helped, particularly, control and measurement current potential.Especially, shown here as with the loaded level such as typical half-bridge topology
Three conductor bands 22 of loaded level.Substrate 2 has the first passage opening 24 of center arrangement.
The phase that arrangement can be in the form of such as MOSFET, in the form of IGBT or with diode on two conductor bands 22
Answer power semiconductor assembly 26.In a manner of conventional in the art, connected preferably by sintering, by power semiconductor assembly 26
Electrical conductance is connected to conductor band 22.
The inside that switching device 10 is formed by interface unit 3 electrically connects, in the simplest situations, the interface unit 3
The conductive foil 30 of independent conductor strip section of --- mechanically connect or electrical connection --- of not being connected to each other by being formed is formed.This
A little conductor strip sections are more accurately speaking carrying on the back for the power semiconductor assembly particularly by corresponding power semiconductor subassembly 26
From the conductor band 22 in the contact zone on the side of substrate 2, being connected to substrate 2.
Interface unit 3 be preferably paper tinsel/film layer overlapping piece form, the paper tinsel/film layer overlapping piece include at least one conductive foil 30 or
32 and including at least one electrical insulating film 31.At least one conductive foil 30 of interface unit 3,32 intrinsic patterns, and
Therefore the conductor strip section being electrically insulated from each other is formed.If there is multiple conductive foils, then it is respectively arranged between these conductive foils
Electrical insulating film.
Preferably paper tinsel/film of paper tinsel/film layer overlapping piece is connected to each other, particularly with bonding mode.
In the range of exemplary embodiment, paper tinsel/film composite members 3 have two conductive foils 30 and 32 and are arranged in described
Electrical insulating film 31 between conductive foil.Particularly, the 30 and 32 intrinsic pattern of conductive foil of interface unit 3, and therefore shape
Into the conductor strip section being electrically insulated from each other.
Interface unit 3 has the first main 300 and second main surface 320 of surface, and the first main surface 300 faces substrate 2, should
Second main surface 320 is departing from substrate 2.By interface unit 3, switching device 10 is internally connected with suitable circuit system
Connect.The conductor strip section of interface unit 3 is more accurately speaking particularly that the power is partly led by corresponding power semiconductor subassembly 26
Contact zone on the side departing from substrate 2 of body component, it is connected to the conductor band 22 of substrate 2.In preferable refinement, borrow
Help sintering connection that conductor strip section is adhesively connected to the contact zone of power semiconductor assembly 26.It is self-evident, can be in work(
Connection is identically formed between rate semiconductor subassembly 26 and also between the conductor band 22 of substrate 2.Particularly connect in pressure sintering
In the case of connecing, it is advantageous that the arrangement electric insulation block part 28 at the borderline region of power semiconductor assembly 26.It can also lead
Arrangement insulation block part 28 in midfeather between body band 22.In face of substrate 2 paper tinsel 30 that surface in exemplary embodiment
The first main surface 300 of middle formation, meanwhile, form the second main surface 320 departing from the opposed surface of substrate 2, described paper tinsel 32.Such as
What fruit interface unit 3 was only made up of a conductive foil 30, then form the first main surface in face of that surface of substrate 2 by paper tinsel 30
300, and the second main surface 320 is formed by that surface departing from substrate 2 of paper tinsel 30.
For the purpose of external electrical connections, power semiconductor modular 1, which has, to be loaded and aids in connecting element, wherein here only
Load connecting element 4 is shown.Merely illustrative example of mode, these load connecting elements 4 are shaped metal body forms, by shaping gold
Belong to body by way of contact feet, with bonding mode, equally advantageous connected by means of sintering, be connected to the conductor band of substrate 2
22。
In addition, power semiconductor modular 1 has the shell 6 that substrate 2 is connected to especially by the mode being adhesively joined.It is negative
Carry connecting element 4 protruded through shell 6, and here formed be used for will be by external power circuit element (for example, bus or electricity
Cable) carry out electrical contact load contact device 40.
Power semiconductor modular 1 has pressure device 5, and the pressure device 5 has pressure body 50 and in power semiconductor group
The pressure elements 52 protruded on the direction of part 26 from pressure body 50.In the range of exemplary embodiment, pressure body 50 has the
One recess 504, pressure elements 52 to be protruded away in every case from first recess is arranged to, wherein
Pressure elements is pressed on the part 322 on the second main surface 320 of interface unit 3, and here, in power semiconductor assembly 26
The top of the surface 26a departing from substrate 2 this part 322 is alignedly arranged on the normal direction N of substrate 2.Served as a contrast on edge
In the normal direction N at bottom 2 projection, part 322 be preferably arranged to power semiconductor assembly 26 departing from substrate 2 that
In individual surface 26a.
In simplest situation, pressure elements 52 can be pressed by the required pressure generated for this purpose by gravity
Onto the part 322 on the second main surface 320 of interface unit 3, when pressure is arranged in the center with reference to the earth in the top of interface unit 3
During power device 5, pressure device 5 is pressed into the part 322 on the second main surface 320 of interface unit 3 by the gravity.Therefore, deposit
In fastener 7 and cooling device 8 to generate pressure and not required that they be so.
The first recess 504 in pressure body 50 is preferably the depression since the first main surface 500 of pressure body 50
Form, the first main surface face substrate 2.
The surface area of the part 322 on the second main surface 302 of interface unit 3 be power semiconductor assembly 26 departing from
At least the 20% of that surface 26a of substrate 2, especially at least 50%.
Pressure body 50 has the first main 500 and second main surface 502 of surface, and the first main surface 500 faces substrate 2, should
Second main surface 502 is departing from substrate 2.Pressure body 50 is preferably by rigid design, so as to will be incited somebody to action in an uniform way
The pressure transmission of pressure body 50 is incorporated into pressure elements 52.For this purpose and in power semiconductor modular 1
The background of heat loading during operation, what pressure body 50 was preferably made up of high-temperature-resistant thermoplastic material, particularly by polyphenylene sulfide
What ether was formed.
The ratio of length of the lateral length and pressure body 50 of pressure body 50 on the normal direction N of substrate 2 is preferably
At least 3 to 1, especially at least 5 to 1.
According to the present invention, what pressure elements 52 was made up of elastic container 52 ', wherein arranging phase transformation in the inside of the elastic container
Material 52 '.Phase-change material has higher specific fusion enthalpy and can be therefore under phase transition temperature from its solid state change
Transformation (phase transformation) period into its liquid absorbs high-caliber heat energy.Can for the phase-change material business of different phase transition temperatures
With, and in technically usual mode, phase-change material is for example by such as MnH2What O salt hydrate was formed, such as by
Such as paraffin (such as CnH2n+2) or aliphatic acid (such as CH3(CH2)2nWhat organic material COOH) was formed.The phase-change material used
Can also be such as MgCl2x 6H2O.Due to the elasticity of shell 52 ', so pressure elements 52 can deform when it is pressed, with
And the profile of the part 322 on the second main surface 320 of interface unit 3 is therefore adapted to, and power half is therefore adapted to indirectly
That surface 26a departing from substrate 2 of conductor assembly 26 profile so that power semiconductor will be applied to by pressure elements 53
Pressure on component 26 is evenly distributed in the surface 26a of power semiconductor assembly 26 top, and therefore will not form energy
Enough cause the local pressure peak of breakdown power semiconductor subassembly 26.What shell 52 ' was preferably made up of elastomer, particularly by silicon rubber
What glue was formed.Can be for example by the shell in the opening being filled with a point of phase-change material, and then weld in shell
Opening, manufacture pressure elements 52.
The phase transition temperature of phase-change material is preferably in the maximum-junction temperature T of power semiconductor assembly 26jmaxUnder 0.1%
To 25%, particularly 0.1% to 10%, particularly 0.1% to 5%, the maximum-junction temperature TjmaxIt is the power semiconductor
The junction temperature that can allow during the operation of component 26, and it is indicated by the manufacturer of the power semiconductor assembly 26, example
Such as, in tables of data.As a result, especially during operation, such as in the case of of short duration power peak, the power semiconductor group
The junction temperature T of part 26jClose to the maximum-junction temperature T that can allow of power semiconductor assembly 26jmaxWhen, by pressure elements 52
Additionally cool down corresponding power semiconductor subassembly 26.In the case of most power semiconductor assembly 26, in power semiconductor group
The maximum-junction temperature for the semiconductor subassembly 26 that can allow during the operation of part 26 is positioned at the temperature range from 150 DEG C to 200 DEG C
In, and particularly 150 DEG C or 175 DEG C.
Because pressure elements can absorb a large amount of heat energy first and secondly at least due to elastic container shows elasticity,
The volume of phase-change material and the ratio of the cumulative volume of pressure elements are preferably 10% to 70%, are particularly 10% to 50%.
Phase-change material preferably has the specific fusion enthalpy from 80kJ/kg to 300kJ/kg.
In the case of the temperature fluctuation for surrounding phase transition temperature in phase-change material being present, temperature is being become again in phase-change material
Preferably at least 5 DEG C under phase transition temperature, especially at least 10 DEG C, because phase-change material is not at that time continually by its shape
State is changing into liquid from solid, and vice versa, wherein becoming phase-change material described in temperature again described and being changing into from its liquid
Its solid-state.Further, if power semiconductor assembly is in high temperature during operation, not by from its liquid to its solid-state
Transformation during by phase-change material transmitting heat come additionally heating power semiconductor subassembly.
The pressure body 50 of pressure device 5 preferably has metal insert 56, and the metal insert 56 is preferably arranged to press
In the second recess 506 in pressure body 50 on second main surface 502 of power device 5.Pressure body 5 preferably has second to lead to
Road opening 54.
Shell 6 preferably has third channel opening 64, and the third channel opening 64 is arranged such that it is logical with first
Road opening 24 and second channel opening 54 are aligned.Screw is arranged to fastener 7 and passes it through these access portals, by
Shell 6, more accurately by casing cover 6 ' and substrate 2 by the screw-driving into cooling device 80 or 82, and therefore apply
Plus-pressure is on pressure device 5, accurately at those points at arrangement power semiconductor assembly 26, by the He of pressure device 5
Screw is pressed on cooling device 80 or 82 by interface unit 3, and therefore in a manner of press-in cooperation by substrate 2 and cooling device
80 or 82 connections.It should be noted that fastener 7 or screw 7 generally can be also applied pressure to directly on pressure device 5, make
Pressure elements 52 is obtained to be pressed on the part 322 on the second main surface 320 of interface unit 3.This can be for example, by with lower section
Formula is realized：By being configured to have the head of screw of screw 7 through the threeway of the correspondingly-sized of third channel opening 64
Road opening 64, or different some other manners in a manner of being shown from Fig. 1 come essence distribute or design and be outer
Cap 6 '.
Therefore, in a word, it has to be noted that fastener 7 or screw 7 can be indirectly (by least one insertion elements)
Or directly apply pressure on pressure device 5 so that pressure elements 52 is pressed into the portion on the second main surface 320 of interface unit 3
Divide on 322.
As one man distribution pressure, wherein pressure elements 52 are directed to the pressure body 50 of pressure device 5 above pressure elements 52
Its part is pressed on the part 322 on the second main surface 320 of interface unit 3 in an uniform way.It is preferably chosen and is under pressure
Effect interface unit 3 the second main surface 320 part 322, by this way cause such as with the normal direction of substrate 2
Watched on N, they are disposed in the surface 26a departing from substrate 2 of corresponding power semiconductor subassembly 26.Therefore, pressure member
Part 52 is pressed on corresponding power semiconductor subassembly 26 by interface unit 3, is caused the power semiconductor by this way
Component, more accurately speaking it is the substrate 2 being disposed below, is pressed on cooling device 80 or 82, and is therefore partly led from power
The thermo-contact of body component 26 to cooling device 80 or 82 is optimal.
Due to pressure is incorporated on elastic pressure element 52, so the elastic pressure element can deform, wherein, this
In can also increase the lateral length of the elastic pressure element.Heat conduction layer, such as Thermally-conductivepaste paste 800, can be arranged
Between substrate 2 and cooling device 82 or 80.
In the range of the present exemplary embodiment, cooling device is heat sink 82 form.By way of example in Fig. 1
Cooling device is shown as to be used for air cooled heat sink 82, but is their ability to be similarly the heat sink shape for liquid cooling
Formula.Heat sink 82 have the metal substrate 80 from cooling fin 80a or the 80a extensions of cooling pin.Then, as alternative, cooling
Device only can also be designed in the form of metal substrate 80.In this case, metal substrate 80 is intended to be installed in heat
On heavy (for example, gas is heat sink or hydro-thermal is sunk).
Fig. 2 shows the plan view of the switching device 10 in different cross section plane.Shown according to Fig. 2 a sectional plane
Two power semiconductor assemblies of arrangement (in a way not illustrated) on the common conductor band 22 or different conductor band 22 of substrate 2
26.With not limiting general aspects, power semiconductor assembly described here is to include central gate bonding pad 90 to connect with emitter stage
The transistor in area 91, emitter stage bonding pad 91 include surrounding the central gate bonding pad；And including negative electrode bonding pad 92
Diode.
Fig. 2 b show the first of interface unit 3 conductive foil 30 inherently patterned.Described first conduction inherently patterned
Paper tinsel forms being conductively connected between the emitter stage bonding pad 91 of transistor and the negative electrode bonding pad 91 of diode.Here crystalline substance is left out
The gate connection region 90 of body pipe.
Fig. 2 c show the second of interface unit 3 conductive foil 32 inherently patterned.Described second conduction inherently patterned
Paper tinsel forms being conductively connected to the gate connection region 90 of transistor.
Fig. 2 d show on interface unit 3 (not shown) with power semiconductor assembly 26 --- be more accurately speaking the pressure
The mechanical contact region 70 of the pressure elements 52 of the shell 52 ' of power element --- association, wherein it is preferred to due to its square fundamental form
Shape, only one pressure elements 52 associate with transistor, and due to its rectangular basic shape, so two pressure elements 52 and two
Pole pipe associates.
Showing for shell 52 ' is preferably without projecting past power with the mechanical contact region 70 of the Mechanical Contact of interface unit 3
The surface 26a departing from substrate 2 of semiconductor subassembly 26.As a result, the usual pressure-sensitive border of power semiconductor assembly 26 is avoided
The pressure-loaded at edge.
It is self-evident, as long as itself not excluding, then the feature that odd number refers to, particularly power semiconductor assembly and connection
Device, additionally it is possible to be presented on majority in the power semiconductor modular according to the present invention.Particularly, can be at one of substrate
Or more arrange multiple power semiconductor assemblies on conductor band.
This point should be noted that the present invention different exemplary embodiments feature certainly can according to it is required each other
With reference to as long as this feature is not mutually exclusive.
Claims (15)
1. a kind of power semiconductor modular, the power semiconductor modular includes switching device and including pressure device,
The switching device has：Substrate, the power semiconductor assembly arranged over the substrate, and interface unit,
The pressure device is designed so that the pressure device can move in the normal direction of the substrate,
Wherein, the substrate has the conductor band being electrically insulated from each other,
Wherein, the power semiconductor assembly is disposed on the conductor band of the substrate and connected in a manner of bonding and be conductive
The substrate is connected to,
Wherein, the interface unit has the first main surface and the second main surface and conductive foil, and the first main surface faces
The substrate, the second main surface departing from the substrate,
Wherein, the switching device is internally connected by the interface unit with suitable circuit system,
Wherein, the pressure device has pressure body and protruded on the direction of the power semiconductor assembly from the pressure body
Pressure elements,
Wherein, the pressure elements is pressed into the part on the described second main surface of the interface unit, and here, should
Part in a manner of being aligned in the normal direction in the substrate be disposed in the power semiconductor assembly departing from
The top on the surface of the substrate,
Wherein, the pressure elements is made up of elastic container, and phase-change material is disposed with the inside of the elastic container.
2. power semiconductor modular according to claim 1, it is characterised in that
The phase transition temperature of the phase-change material is：The power that can allow during the operation of the power semiconductor assembly
0.1% to 25% under the maximum-junction temperature of semiconductor subassembly, particularly 0.1% to 10%, particularly 0.1% to 5%,
Wherein, in the phase transition temperature, the phase-change material is from its solid state change into its liquid.
3. power semiconductor modular according to claim 2, it is characterised in that
The maximum junction temperature for the power semiconductor assembly that can allow during the operation of the power semiconductor assembly
Degree is in the temperature range from 150 DEG C to 200 DEG C.
4. according to the power semiconductor modular described in any one of claim 1-3, it is characterised in that
The shell is made up of elastomer, is particularly made up of silicon rubber.
5. according to the power semiconductor modular described in any one of claim 1-3, it is characterised in that
The volume ratio of the phase-change material is 10% to the 70% of the cumulative volume of the pressure elements, and particularly 10% arrives
50%.
6. according to the power semiconductor modular described in any one of claim 1-3, it is characterised in that
The phase-change material is made up of at least one salt hydrate, or be made up of at least one organic material.
7. according to the power semiconductor modular described in any one of claim 1-3, it is characterised in that
The phase-change material has the specific fusion enthalpy from 80kJ/kg to 300kJ/kg.
8. according to the power semiconductor modular described in any one of claim 1-3, it is characterised in that
It is at least 5 DEG C, especially at least 10 DEG C under the phase transition temperature of the phase-change material to become temperature again,
Wherein, temperature is become again described, the phase-change material is changing into its solid-state from its liquid.
9. according to the power semiconductor modular described in any one of claim 1-3, it is characterised in that
The pressure body has the first recess, the pressure elements be arranged to so as to be projected into first recess it
Outside.
10. power semiconductor modular according to claim 9, it is characterised in that
First recess in the pressure body be in the form of the depression the first main surface since the pressure body,
The first main surface faces the substrate.
11. according to the power semiconductor modular described in any one of claim 1-3, it is characterised in that
The pressure body is made up of high-temperature-resistant thermoplastic material, is particularly made up of polyphenylene sulfide.
12. according to the power semiconductor modular described in any one of claim 1-3, it is characterised in that
The mechanical contact region of the shell does not project past that table departing from the substrate of the power semiconductor assembly
Face,
Wherein, the mechanical contact region shows the Mechanical Contact with the interface unit.
13. according to the power semiconductor modular described in any one of claim 1-3, it is characterised in that
The power semiconductor modular has fastener, and the fastener is designed in a manner of press-in cooperation by described in
Power semiconductor modular is fastened on cooling device.
14. a kind of power semiconductor, the power semiconductor is included described in one in preceding claims
Power semiconductor modular, the power semiconductor includes cooling device and including fastener,
The fastener is designed to that the power semiconductor modular is fastened on cooling device in a manner of press-in cooperation,
Wherein, the fastener is introduced force on the direction of the cooling device on the pressure device, and by
The substrate is connected to the cooling device by this in a manner of press-in cooperation.
15. power semiconductor according to claim 14, it is characterised in that
The cooling device is in the form of the metal substrate for being intended to be installed on heat sink, or is in the form of heat sink.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102016110912.6A DE102016110912B4 (en) | 2016-06-14 | 2016-06-14 | Power semiconductor module with a switching device |
| DE102016110912.6 | 2016-06-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107507814A true CN107507814A (en) | 2017-12-22 |
| CN107507814B CN107507814B (en) | 2023-03-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710438281.2A Active CN107507814B (en) | 2016-06-14 | 2017-06-12 | Power semiconductor module comprising a switching device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107507814B (en) |
| DE (1) | DE102016110912B4 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110416102A (en) * | 2018-04-26 | 2019-11-05 | 赛米控电子股份有限公司 | Power semiconductor component and substrate are through being sintered the pressure sintering processes being connected to each other |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020070445A1 (en) * | 2000-06-29 | 2002-06-13 | Advanced Micro Devices, Inc. | Enveloped thermal interface with metal matrix components |
| CN104157622A (en) * | 2013-05-14 | 2014-11-19 | 赛米控电子股份有限公司 | Electronic power switching device and arrangement structure with the same |
| CN104157635A (en) * | 2013-05-14 | 2014-11-19 | 赛米控电子股份有限公司 | Power semiconductor module and systems with the same |
| CN105097716A (en) * | 2014-05-09 | 2015-11-25 | 赛米控电子股份有限公司 | Power semiconductor module with switching device and assembly |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014213545A1 (en) | 2014-07-11 | 2015-04-23 | Siemens Aktiengesellschaft | The power semiconductor module |
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2016
- 2016-06-14 DE DE102016110912.6A patent/DE102016110912B4/en active Active
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2017
- 2017-06-12 CN CN201710438281.2A patent/CN107507814B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020070445A1 (en) * | 2000-06-29 | 2002-06-13 | Advanced Micro Devices, Inc. | Enveloped thermal interface with metal matrix components |
| CN104157622A (en) * | 2013-05-14 | 2014-11-19 | 赛米控电子股份有限公司 | Electronic power switching device and arrangement structure with the same |
| CN104157635A (en) * | 2013-05-14 | 2014-11-19 | 赛米控电子股份有限公司 | Power semiconductor module and systems with the same |
| CN105097716A (en) * | 2014-05-09 | 2015-11-25 | 赛米控电子股份有限公司 | Power semiconductor module with switching device and assembly |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110416102A (en) * | 2018-04-26 | 2019-11-05 | 赛米控电子股份有限公司 | Power semiconductor component and substrate are through being sintered the pressure sintering processes being connected to each other |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107507814B (en) | 2023-03-21 |
| DE102016110912A1 (en) | 2017-12-14 |
| DE102016110912B4 (en) | 2018-03-08 |
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