CN108122864B - Pressure device for a power electronic switching device, switching device and arrangement thereof - Google Patents

Pressure device for a power electronic switching device, switching device and arrangement thereof Download PDF

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Publication number
CN108122864B
CN108122864B CN201711238191.5A CN201711238191A CN108122864B CN 108122864 B CN108122864 B CN 108122864B CN 201711238191 A CN201711238191 A CN 201711238191A CN 108122864 B CN108122864 B CN 108122864B
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China
Prior art keywords
pressure
switching device
power semiconductor
substrate
connection
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CN201711238191.5A
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CN108122864A (en
Inventor
M·雷德勒
R·波普
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Semikron Electronics Co ltd
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Semikron Electronics Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4093—Snap-on arrangements, e.g. clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/90—Methods for connecting semiconductor or solid state bodies using means for bonding not being attached to, or not being formed on, the body surface to be connected, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H01L2023/4075—Mechanical elements
    • H01L2023/4081—Compliant clamping elements not primarily serving heat-conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H01L2023/4075—Mechanical elements
    • H01L2023/4087—Mounting accessories, interposers, clamping or screwing parts

Abstract

The invention provides a pressure device realized as a main body with a plurality of container devices for pressure bodies, wherein each pressure body is realized as a first rigid part body and a second spring-elastic part body, wherein the pressure bodies are arranged in the container devices of the main body by means of a reversible connection, and each second part body protrudes from the assigned first part body in a direction away from the main body. In this case, one or more first partial bodies can also have in each case more than one second partial body. Furthermore, the invention provides a power electronic switching device comprising such a pressure device and an arrangement having such a switching device.

Description

Pressure device for a power electronic switching device, switching device and arrangement thereof
Technical Field
The invention describes a pressure device for a power electronic switching device, which pressure device forms a power electronic base member of a power semiconductor module or a power electronic system, in that the pressure device forms a base unit of the power semiconductor module or the power electronic system by itself or by combination with other, preferably identical pressure devices. Furthermore, an arrangement comprising the power electronic switching device is described.
Background
The prior art, for example disclosed in DE 10 2013 104 949 B3, discloses a switching device comprising a base, a power semiconductor, a connection device, a load termination device and a pressure device. In this example, the substrate has electrically insulated conductor tracks, wherein the power semiconductor component is arranged in the conductor tracks. The connection means is realized as a film composite comprising an electrically conductive film and an electrically insulating film and having a first main and a second main area. Thus, the switching device is internally connected in a circuit-compliant manner. The pressure device has a pressure body with a first cutout from which the pressure element is arranged to protrude, wherein the pressure element presses against a region part of the second main region of the membrane composite, and wherein said region part is arranged in projection in the region of the power semiconductor in the normal direction of the power semiconductor in this example.
Disclosure of Invention
With the above-mentioned situation in mind, the present invention is based on the object of providing a pressure device which is adaptable in a flexible manner to a corresponding power electronic switching device, as well as to an associated switching device and an arrangement thereof.
According to the invention, this object is achieved by a pressure device having the features of claim 1, by a power electronic switching device having the features of claim 8, and by an arrangement comprising a power electronic switching device having the features of claim 13. Preferred embodiments are described in the dependent claims, respectively.
The pressure device according to the invention is embodied as a main body with a plurality of container devices for the pressure bodies, wherein each pressure body is embodied as a body with a first rigid part body and a second spring part body, wherein the pressure bodies are arranged in the container devices of the main body by means of a reversible connection, and each second part body protrudes from the assigned first part body in a direction away from the main body. In this case, one or more first partial bodies can also have in each case more than one second partial body.
In this example, the reversible connection can be realized in a positive or positive locking manner, in particular as a snap-lock connection or a clip-lock connection.
Advantageously, the first part-body is realized from a high-temperature-resistant plastic, preferably a thermoplastic, wherein a metal reinforcement structure can also be arranged in this plastic or cutout of the first part-body. The second part body is preferably realized by an elastomer, preferably a silicone elastomer, in particular a crosslinked liquid silicone. Furthermore, the different second part bodies can have different heights, in particular they can protrude to different extents from the assigned first part bodies. The second part-body is particularly preferably arranged partially in the cutout of the first part-body and protrudes from said cutout, the second part-body being particularly in a mat-like manner, wherein its surface can be embodied as a plane, a projection or a recess.
Particularly preferably, in each instance, the plurality of container means of the body are arranged in a matrix-like manner in the form of an n x m matrix, and in this instance, the container means (500) are preferably equally spaced apart from each other, wherein the spacing in the direction of the matrix n can be completely different from the spacing in the direction of m, and furthermore, it is possible to have only a part of these rows and columns with the same spacing.
The switching device according to the invention is realized to comprise a substrate, to comprise connecting means and to comprise pressure means, wherein the substrate has conductor tracks electrically insulated from each other and the power semiconductor component is arranged with its own main area on one conductor track and is connected thereto in an electrically conductive manner, wherein the pressure means is pressed against a first area portion of the connecting means by means of a pressure area of a second part body, said first area portion facing the pressure means, wherein the first area portion is aligned with a surface of the first main area of the power semiconductor component in the direction of the substrate normal.
Preferably, the connection means are realized as a film compound, such as is basically known from the prior art, comprising a conductive film and an electrically insulating film, wherein the switching means are connected internally in a circuit-compliant manner by means of the connection means in a positive locking or material bonding manner.
In particular, it is preferred that the pressure region of the second part-body projects in the direction of the normal to the substrate entirely within the surface of the power semiconductor component.
The pressure device is pressed by a further pressure region of a second partial body against a second region part of the connecting device, which second region part faces the pressure device, wherein the second region part is arranged, in projection, outside the surface of all the power semiconductor components in the normal direction of the substrate, which is particularly advantageous. This means that the second partial body or the plurality of second partial bodies only press on the area next to the power semiconductor component.
Preferably, the surface area of the first area portion is at least 25%, in particular at least 50%, of the surface area of the allocated power semiconductor surface. In this example, the area of the power semiconductor element is understood to mean the extent of its entire area, that is to say not only the terminal or contact area.
The arrangement according to the invention is realized to comprise the above-mentioned electronic switching device, comprising the cooling device and comprising the pressure introduction device, wherein the pressure introduction device is directly or indirectly supported on the cooling device and preferably centrally introduces pressure onto the pressure device and thus the switching device is connected to the cooling device in a positive locking manner.
Similarly, the heat-conducting layer, in particular the heat-conducting paste, may have a thickness of less than 20 micrometers, in particular less than 10 micrometers, in particular less than 5 micrometers, which may be arranged between the substrate and the cooling device, in particular between the substrate portion, in which the power semiconductor component is arranged, and the cooling device, in particular due to the effective pressure introduction.
It is also preferable that the cooling means is a substrate (preferably a metal substrate) or a heat sink of the power semiconductor module.
Of course, the features described above in individual form can be implemented in plural unless excluded from itself. In particular, in each power electronic switching device or arrangement thereof, the power semiconductor component can be a plurality.
It goes without saying that the different structures of the invention can be implemented individually or in any combination to achieve improvements. In particular, the features described above and in the following and explained, whether or not they are described in the context of a pressure device, the power electronic switching device or arrangement can be used not only in the illustrated combination, but also in other combinations, or by themselves, without departing from the scope of the invention.
Drawings
Other descriptions, advantageous descriptions and features of the present invention will become more apparent in the following description of the exemplary embodiments shown in fig. 1 through 10 d.
Fig. 1 and 2 show a pressure device according to the invention in a transverse section.
Fig. 3 shows a pressure device according to the invention in a plan view.
Fig. 4 shows the pressure body in a three-dimensional view.
Fig. 5 and 6 show another three-dimensional view of the pressure device according to the invention.
Fig. 7 shows in an exploded view an arrangement according to the invention comprising a power electronic switching device according to the invention.
Fig. 8 and 9 show a power electronic switching device according to the invention in an unassembled state and an assembled state, respectively.
Fig. 10 a-10 d show plan views of the power electronic switching device in different cross sections.
Detailed Description
Fig. 1 and 2 show a pressure device 5 according to the invention for a power electronic switching device in a transverse section. In this example, the pressure device 5 has a main body 50, the main body 50 having a plurality of container devices 500 implemented in the same manner in these structures. The container means 500 is realized as a cut-out of the body 50.
Furthermore, the pressure device 5 has a plurality of pressure bodies 52, each of which pressure bodies 52 is assigned to one cutout, i.e. the container device 500 of the main body 50, and each of which pressure bodies 52 is provided to be arranged therein, see fig. 2. In this example, each pressure body 52 has a first rigid part body 54, which is preferably composed of a high-temperature-resistant plastic, preferably a thermoplastic, in particular polyphenylene sulfide. In the further cutout 540 of the first part body 54, the second part body 56 is arranged in such a way that it protrudes from said cutout 540 in a direction away from the assigned main body 50.
Each second part body 56 is composed of an elastomer, preferably a silicone elastomer, in particular a cross-linked liquid silicone, and is arranged in a further cutout 540 by means of a two-component injection molding (two-component plastic injection-molding) method. In this configuration, the second part body 56 protrudes from the other cutout 540 in a mat-like manner with planar pressure areas 560, 562.
The figures herein show, by way of example only, two variants of pressure bodies having different first part body heights to create parallel offset of the pressure areas of the second part bodies of different pressure bodies, see fig. 8 and 9. Equivalently, the thickness of the second part body can also be varied, or the depth of the main body cut can be varied, or any desired combination of these variations.
The body 50 of the pressure device 5 according to the invention may preferably have a number of cutouts, i.e. container means 500, which are arranged in a matrix-like manner in the form of an n x m matrix. In this example, the pressure body 52 need not be disposed in each cutout. Preferably, the pressure body 52 is arranged with its first part body 54 in a positive locking or positive locking manner, here in the form of a positive locking reversible clamping connection. It is particularly advantageous that the main body 50 and the pressure body 52 can thus be assembled in a specific application, which is indicated by the arrows in fig. 1. Fig. 2 then shows a main body 50 assembled in this way, which together with a pressure body 52 arranged forms the pressure device 5.
Fig. 3 shows a pressure device 5 according to the invention in a plan view. Similar to fig. 1 and 2, which show a body 50 with slits 500, the slits 500 are arranged in a matrix-like manner in the form of a 4 x 2 matrix, wherein the slits are equally spaced in the x-direction and the y-direction, respectively. The arrangement of the pressure body 52 in the cutout 500 is here achieved in different ways.
The pressure body 52 is shown having a generally square pressure area 560 and a rectangular or circular pressure area. The two pressure bodies 52 each have a first part-body 54 and two second part-bodies 56. In this example, the illustrated variation is merely an example of the various configurations of the second portion body 56.
Fig. 4 illustrates a pressure body 52 substantially in three dimensions, such as described with respect to fig. 1 and 2. The essential differences here include the structure connected to the main body, wherein here the pressure body 52, more precisely the first part body 54 of the pressure body 52, has a latching flange 542, see fig. 6, which together with the joint 502 forms a reversible connection.
Fig. 5 and 6 show further three-dimensional views of the pressure device 5 according to the invention. In this example, fig. 5 shows a sectional view of a power electronic switching device in the form of a power semiconductor module, wherein the pressure device 5 is part of a housing 510 of the power semiconductor module. Furthermore, the power semiconductor module has a substrate 2, which is conventional in the art and is described in more detail by way of example in the following figures. Furthermore, these figures each show a main body 50, wherein the respectively assigned pressure body 52, which is largely analogous to the pressure body according to fig. 4, is arranged in the cutout 500 by means of latching connections 502, 542.
Fig. 7 shows in a schematic exploded view an arrangement according to the invention comprising a power electronic switching device 1 according to the invention. The figure shows a substrate 2 which is basically realized in a manner conventional in the art, and the substrate 2 comprises an insulating substrate body 20 and conductor tracks 22 arranged thereon and each electrically insulated from each other, said conductor tracks having different potentials, in particular load potentials, and also auxiliary substances, in particular switching and measuring, potentials of a switching device. Three conductor tracks 22 with load potential, such as a conventional half-bridge topology of a power electronic circuit, are specifically shown here.
The power semiconductor components 7 are arranged on two conductor tracks 22, respectively, the power semiconductor components 7 being able to be realized in a manner conventional in the art as individual switches, for example MOS-FETs, or IGBTs with connections in antiparallel fashion as shown here. The power semiconductor element 7, more precisely the first contact region (700, see fig. 2) of its first main region 700, is connected to the assigned conductor track 22 in an electrically conductive manner by means of material bonding, which is conventional in the art, preferably by means of a pressure sintering connection 84.
The internal connections of the switching device 1 are formed by connection means 3, the connection means 3 being a film composite made of films 30, 34 with alternating electrical conductivity and an electrically insulating film 32. Here, the film composite has exactly two conductive films and one insulating film disposed in the two conductive films. In this example, the surface of the film composite 3 facing the substrate 2 forms a first major region 300 of the film composite, while the opposite surface forms a second major region 340 of the film composite. Specifically, the conductive films 30, 34 of the connection device 3 are of an inherent structure, and thus form conductor trace portions insulated from each other. Which connects, in particular, the contact areas of the individual power semiconductor components 7, more precisely on the side facing away from the substrate 2, to the conductor tracks 22 of the substrate. In this configuration, the conductor track portions are connected to the contact areas of the substrate 2 by means of a material bond by means of pressure sintering the connections 82.
For external electrical connection, the power electronic switching device 1 has a load termination and an auxiliary termination, only the load terminations 10, 12 being shown here. By way of example, it can be seen that the load termination is realized entirely as a metal shaped body 10, the metal shaped body 10 being connected to the conductor tracks 22 of the substrate 2 by contact pins, in a material-bonded manner, advantageously in a manner similar to a connection by pressure sintering. Also shown as an alternative construction to the load termination of the contact spring 12, as is conventional in the art. Basically, a part of the connection device 3 itself can also be realized as a load termination or an auxiliary termination. Auxiliary terminations (not shown), such as door terminals or sensor terminals, are also preferably implemented in a manner conventional in the art, particularly in a functionally equivalent manner to the load termination described above.
The pressure device 5 is realized as described in fig. 1 and 2 and has a main body 50 and a pressure body 52, the pressure body 52 being arranged in a reversible manner in a cutout 500 of said main body, said pressure body comprising a first part-body 54 and a second part-body 56 as parts thereof. The pressure area 560 of the second part-body 56 is also realized in a mat-like manner, wherein the second part-body 56 protrudes in a direction away from the main body 50 and towards the substrate 2.
Furthermore, the arrangement has a heat sink 4, the surface of which is covered by a heat conducting layer 40, so that the power electronic switching device 1, more precisely the substrate 2 thereof, is arranged on the heat conducting layer 40. Due to the structure of the arrangement according to the invention, the heat conducting layer 40 can have a very small thickness, here between 5 and 10 micrometers. Basically, the heat conductive layer 40 can be omitted entirely. Depending on the surface composition, in particular the roughness of the heat sink 4.
Alternatively and by way of example, the insulating layer 20 of the substrate 2 can be realized as an electrically insulating film, which is laminated directly on the heat sink 4. In this case, the conductor track 22 can also be realized as a planar conductor made of copper. The latter then advantageously has a thickness of 0.5 mm to 1.0 mm.
The arrangement also has a pressure introduction device 6 which is arranged above the connection device 3 and has a spring element 600, in which structure the spring element 600 presses centrally against the pressure device 5. By means of said pressure introduction means 6, which are supported by a radiator in a manner not shown, a pressure 60 is introduced on the pressure body 50. The pressure 60 is in each case transmitted as partial pressure 62 directly to the first region part 360 of the second main region 340 of the membrane composite 3 by means of the pressure members 52 and the pressure regions 560 of their second partial bodies 56. Then, with the formation of the positive locking connection, the region part 360 presses the contact region of the first main region 300 of the film composite 3 indirectly against the assigned contact region 700 of the second main region of the power semiconductor component 7. The area portion 360 is arranged to project in the direction of the normal N of the substrate 2 in an area 760 of the power semiconductor 7.
The introduced pressure 60 also presses the entire substrate 2 against the heat sink 4. The two pressure contacts, the electrically conductive pressure contact between the connecting means 3 and the power semiconductor 7 and the pressure contact between the base 2 and the heat sink 4, in each case act in the direction of the normal N of the base 2 and also of the power semiconductor 7. Thus, firstly, an efficient positive locking and electrically conductive connection is formed between the connection device 3 and the power semiconductor element 7, which connection exhibits an extremely low contact resistance. Second, a similarly efficient heat transfer connection is simultaneously formed between the substrate 2 and the heat sink 4, which connection, due to the aligned arrangement of the pressure body 50 exerting pressure therein, forms the most efficient heat transfer precisely at the location with the highest heat generation, i.e. the power semiconductor component 7. Therefore, a large-area material bonding connection between the substrate 2 and the heat sink 4, which is conventional in the art and difficult to have durability, can be omitted.
Fig. 8 and 9 each show a sectional view of the power electronic switching device 1 according to the invention, respectively, similar to that shown and described in fig. 7 in the unassembled state and in the assembled state, i.e. with pressure applied on the pressure device 5.
The figures herein show a substrate 2 comprising one insulating layer 20 and two conductor tracks 22. On the right-hand conductor track 22, a power semiconductor component 7 realized as a power diode is arranged, and the power semiconductor component 7 is electrically conductively connected to the conductor track 22 by means of a material-bonded connection, here a pressure-sintered connection 84.
The power semiconductor component 7, more precisely the contact area 700 thereof facing away from the second main area of the substrate 2, is conductively connected to the left conductor track 22 by the connection means 3. For this purpose, the connection device 3 has a first conductive film 30, wherein the contact region of the first conductive film 30 and the corresponding contact region of the power semiconductor component 7 are realized here only by a positive locking connection (but not limited thereto).
The positive locking connection is formed by a partial pressure 62 which is directly introduced into a first region portion 360 of the second main region 340 of the connection means, here the membrane composite 3. The individual contact points of the positive-locking connection are preferably provided with a gold surface, in particular a gold foil of a few millimeters, since they have the best contact properties and contact resistances. Furthermore, in each case determined according to EN ISO 4287, the contact locations of the positive-locking connection have a roughness depth (Rz) of less than 5 micrometers (in particular less than 2 micrometers) and an average roughness of less than 1 micrometer (in particular less than 0.5 micrometers).
The second contact region of the power semiconductor component 7 is conductively connected to the left conductor track 22. For this purpose, the first metal film 30 of the film composite 3 extends from the contact location with the power semiconductor component 7 as far as the contact location 222 of the left conductor track 22. The connection between the contact locations 322 of the connection means 3 and the contact locations 222 of the conductor tracks 22 of the substrate 2 is formed in a positive locking manner. To this end, a further partial pressure 62 of the assigned pressure body 52 of the pressure device 5 is introduced into the contact locations 222, 322 of the conductor tracks 22 with the metal film 30. Accordingly, in this case, the partial pressure 62 is applied to the second region portion 362 of the second main region 340 of the connection device, as a result of which the contact region 322 of the first conductive film 30 is pressed against the contact region 222 of the left conductor track 22 and is conductively connected thereto in a positively locking manner. In this case, fig. 9 schematically shows the deformation of the second part-body 56 of the pressure body 52 under pressure.
In order to compensate for the height offset 382 of the first region part 360 relative to the second region part 362 caused by the thickness of the power semiconductor component, see fig. 1 and 2, the left first part body has a higher height 582 compared to the height 580 of the right first part body. Preferably, but not entirely, the difference in height of the two part bodies corresponds exactly to the height offset 382. The difference ranges up to 10%, and even typically up to 25%, are fully acceptable here.
As an alternative to a positive locking connection between the contact locations 222, 322 of the conductor tracks 22 and the metal film 30, the connection can also be realized as a pressure sintering connection, or as some other connection conventional in the art.
The connection device 3 further has an electrically insulating film 32 and a further electrically conductive film 34, which interact to form a further circuit-conforming internal connection of the power electronic switching device 1. A plated through hole 320 through the electrically insulating film 32 between the conductive films 30, 34 is also shown in this example.
Furthermore, the power electronic switching device 1 also has a preferably gel-like insulating substance 38, which is arranged in the interspace between the base 2, the connecting means 3 and the power semiconductor component 7. This serves for the internal electrical insulation, in particular between the first conductive film 30 of the connection means 3 and the right conductor track 22 of the substrate 2.
Fig. 10 a-10 d show plan views of the power electronic switching device 1 in different cross sections. The cross-sectional view according to fig. 10a shows two power semiconductor components 7, which are typically arranged on the same conductor track of the substrate, but this is not shown. Without being limited to a general case, this includes a transistor having a central gate terminal region and an emitter terminal region adjacent to the latter, and a diode having a cathode terminal region.
Fig. 10b shows the first inherently structured conductive film 30 of the connecting device 3. Which forms an electrically conductive connection between the emitter region of the transistor and the cathode region of the diode. In this example, the cut is performed for the gate terminal region of the transistor.
Fig. 10c shows a second inherently structured conductive film 34 of the connection device 3. This forms a conductive connection with the gate terminal region of the transistor.
Fig. 10d shows the coverage area of the contact elements of the contact arrangement assigned to the power semiconductor component 7, wherein only one contact is assigned to the transistor due to its square basic shape and two contact elements are assigned to the diode due to its rectangular basic shape. The respective cover areas correspond to those first area portions 360 on the second main area 340 of the connection means 3, which portions are arranged in alignment with the power semiconductor components in the normal direction and project here onto the respective power semiconductor components. It is clear here that the area of the coverage area, i.e. the area where the pressure is introduced, covers the largest possible part of the area of the power semiconductor component without exceeding said area.

Claims (25)

1. Pressure device (5) for a power electronic switching device (1), comprising a main body (50), the main body (50) having a plurality of container devices (500) for pressure bodies (52), wherein each pressure body (52) is realized as a first part-body (54) having rigidity and a second part-body (56) having spring elasticity, wherein the pressure bodies (52) are arranged in the container devices (500) of the main body (50) by means of a reversible connection, and each second part-body (56) protrudes from the assigned first part-body (54) in a direction away from the main body (50),
wherein the first part-body (54) comprises a high temperature resistant plastic and the second part-body (56) comprises an elastomer, the second part-body (56) being arranged partly in a cutout of the first part-body (54) and protruding from the cutout.
2. The pressure device of claim 1, wherein
The reversible connection is realized in a positive locking manner or in an active locking manner.
3. A pressure device according to claim 1 or 2, wherein
The first portion body (54) can have different heights (580, 582).
4. A pressure device according to claim 1 or 2, wherein
The body (50) is realized as a housing or as a part of a housing of the power semiconductor module.
5. A pressure device according to claim 1 or 2, wherein
In each case, a plurality of container means (500) of the body (50) are arranged in a matrix-like manner.
6. The pressure device of claim 2, wherein
The reversible connection is realized as a snap-lock connection (502, 542) or as a clamping connection.
7. The pressure device of claim 1, wherein
The high-temperature-resistant plastic is thermoplastic plastic.
8. The pressure device of claim 1, wherein
The high temperature resistant plastic is polyphenylene sulfide.
9. The pressure device of claim 1, wherein
The elastomer is a silicone elastomer.
10. The pressure device of claim 1, wherein
The elastomer is a crosslinked liquid silicone.
11. The pressure device of claim 1, wherein
The second part body (56) protrudes from the cutout in a mat-like manner.
12. The pressure device of claim 5, wherein
The container means (500) are equally spaced from each other.
13. A power electronic switching device (1) comprising a base (2), comprising connecting means (3), comprising pressure means (5) according to any of the preceding claims,
wherein the substrate has conductor tracks (22) which are electrically insulated from one another and the power semiconductor component (7) is arranged with its own main region (70) on one of the conductor tracks (22) and is connected electrically conductively thereto,
wherein the pressure means (5) is pressed against a first area portion (360) of the connection means (3) by means of a pressure area (560) of the second part body (56), which first area portion faces the pressure means, wherein the first area portion (360) is arranged in alignment with a surface (760) of a first main area (70) of the power semiconductor component (7) in the direction of the normal (N) of the substrate (2).
14. The switching device of claim 13, wherein
The connection device (3) is realized as a film compound comprising an electrically conductive film (30, 34) and an electrically insulating film (32), wherein the switching device is connected internally by the connection device (3) in a circuit-compliant manner.
15. A switching device according to claim 13 or 14, wherein
The pressure region (560) of the second part-body (56) projects in the direction of the normal (N) of the substrate (2) completely within the surface (760) of the power semiconductor component (7).
16. A switching device according to claim 13 or 14, wherein
By means of a further pressure region (562) of one of the second partial bodies (56), the pressure device (5) presses against a second region part (362) of the connecting device (3), which second region part faces the pressure device (5), wherein the second region part (362) is arranged to project outside the surfaces (760) of all the power semiconductor components (7) in the direction of the normal (N) of the substrate (2).
17. The switching device of claim 16, wherein
The surface area of the first area portion (360) is at least 25% of the surface area of the surface (760) of the assigned power semiconductor component (7).
18. The switching device of claim 17, wherein
The surface area of the first area portion (360) is at least 50% of the surface area of the surface (760) of the distributed power semiconductor (7).
19. Arrangement comprising an electronic switching device (1) according to any of claims 13-18, comprising a cooling device (4) and comprising a pressure introduction device (6), wherein the pressure introduction device (6) is directly or indirectly supported by the cooling device (4), the pressure introduction device (6) introducing pressure onto the pressure device (5) and thus connecting the switching device (1) to the cooling device (4) in a positive locking manner.
20. The arrangement of claim 19, wherein
A heat conducting layer (40) is arranged between the substrate (2) and the cooling device (4), the heat conducting layer (40) having a thickness of less than 20 micrometers.
21. The arrangement of claim 19 or 20, wherein
The cooling device (4) is a substrate or a heat sink of the power semiconductor module.
22. The arrangement of claim 19, wherein
The pressure introduction device (6) centrally introduces pressure onto the pressure device (5).
23. The arrangement of claim 20, wherein
The thermally conductive layer (40) has a thickness of less than 10 microns.
24. The arrangement of claim 23, wherein
The thermally conductive layer (40) has a thickness of less than 5 microns.
25. The arrangement of claim 21, wherein
The substrate is a metal substrate.
CN201711238191.5A 2016-11-30 2017-11-30 Pressure device for a power electronic switching device, switching device and arrangement thereof Active CN108122864B (en)

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