CN108122864A - For the pressure apparatus, switching device and its arrangement of electronic power switch device - Google Patents
For the pressure apparatus, switching device and its arrangement of electronic power switch device Download PDFInfo
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- CN108122864A CN108122864A CN201711238191.5A CN201711238191A CN108122864A CN 108122864 A CN108122864 A CN 108122864A CN 201711238191 A CN201711238191 A CN 201711238191A CN 108122864 A CN108122864 A CN 108122864A
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- 230000002441 reversible effect Effects 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 42
- 239000012528 membrane Substances 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 5
- 229920001971 elastomer Polymers 0.000 claims description 4
- 239000000806 elastomer Substances 0.000 claims description 4
- 239000004744 fabric Substances 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 2
- 229920002379 silicone rubber Polymers 0.000 claims description 2
- 229920001169 thermoplastic Polymers 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 239000004416 thermosoftening plastic Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 7
- 238000005245 sintering Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4093—Snap-on arrangements, e.g. clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/90—Methods for connecting semiconductor or solid state bodies using means for bonding not being attached to, or not being formed on, the body surface to be connected, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4075—Mechanical elements
- H01L2023/4081—Compliant clamping elements not primarily serving heat-conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4075—Mechanical elements
- H01L2023/4087—Mounting accessories, interposers, clamping or screwing parts
Abstract
The present invention provides a kind of pressure apparatus, based on it is realized, the main body has the multiple containers device for pressure bodies, wherein, each pressure bodies are embodied as the first rigid element body and second spring elastic part body, wherein, pressure bodies by can reverse connection be arranged in the case of main body, and each second portion body protrudes in the direction away from main body from the first portion body distributed.In this case, one or more first portion's bodies can also have more than one second portion body in each case.In addition, the present invention provides a kind of electronic power switch device and arrangement, which includes such pressure apparatus, which has such switching device.
Description
Technical field
The present invention is described for the pressure apparatus of electronic power switch device, due to by its own or by with it is other
It is preferred that the elementary cell of identical pressure apparatus combination, formation power semiconductor modular or power electronic system, pressure apparatus shape
The power electronics basic building block of success rate semiconductor module or power electronic system.In addition, the present invention is described including the electric power
The arrangement of electronic switching device.
Background technology
Such as disclosed in 10 2,013 104 949 B3 of DE prior art discloses a kind of switching device, including
Substrate, power semiconductor part, attachment device, load terminal device and pressure apparatus.In this example, substrate has electrical isolation
Conductive traces, wherein power semiconductor component are arranged in conductive traces.Attachment device is embodied as membrane complex, including conduction
Film and electrical insulating film, and with first main and the second main region.Therefore, switching device in a manner of coincident circuit inside connect
It connects.Pressure apparatus has pressure bodies, and pressure bodies have the first notch, and pressure elements is arranged as protruding from the first notch,
In, pressure elements is pressed on the region part of the second main region of membrane complex, and the region part in this example
Power semiconductor part normal direction projection arrangement in the region of power semiconductor part.
The content of the invention
By the understanding to above-mentioned condition, the present invention is based on providing a kind of purpose of pressure apparatus, the pressure apparatus be with
Flexible mode is suitable for corresponding electronic power switch device and associated switching device and its arrangement.
According to the present invention, by the pressure apparatus of the feature with claim 1, pass through the feature with claim 8
Electronic power switch device and the feature by including there is claim 13 electronic power switch device arrangement,
Realize the purpose.Preferred embodiment is respectively described in dependent claims.
Pressure apparatus according to the present invention is embodied as the main body with the multiple containers device for pressure bodies, wherein,
Each pressure bodies are embodied as having the first rigid element body and second spring elastic part body reality, wherein, pressure bodies lead to
Cross can reverse connection be disposed in the case of main body and each second portion body in the direction away from main body from being distributed
First portion body protrude.In this case, one or more first portion's bodies can also have more in every case
In the second portion body of one.
In this example, can reverse connection can be realized in a manner of positive lock or active lock, be implemented as clamping lock company
It connects or clamp lock connects.
Advantageously, first portion's body is realized by high-temperature resistance plastice, preferred thermoplastic plastics, wherein, it also can be at first
Divide in plastics or notch of body and arrange metallic strengthening structure.Second portion body is preferably realized by elastomer, is preferably silicon
Resin-elastomer, particularly crosslinked fluid silicones.In addition, different second portion bodies can have different height, it is special
It is not that they can be projected in various degree from the first portion's body distributed.Second portion body particularly preferably part
Ground is arranged in the notch of first portion's body, and is stretched out from the notch, second portion body particularly mat-like fashion,
In, surface can be implemented as plane, protrusion or recessed.
It is particularly preferred that in each example, the multiple containers device of main body is with the matrix-like fashion cloth of n × m matrix forms
It puts, and in this example, case (500) is preferably equally spaced apart from one another, wherein, the spacing in matrix n directions can
The spacing in m directions is totally different from, furthermore it is possible to make the only a part of these ranks there is identical spacing.
Switching device according to the present invention is embodied as including substrate, including attachment device and including pressure apparatus, wherein,
Substrate has the conductive traces being electrically insulated from each other, and power semiconductor component is disposed in one with its own main region and leads
On body trace, and connect so far in an electrically conductive manner, wherein, pass through the pressure span of a second portion body, pressure apparatus
It being pressed on the first area part of attachment device, the first area part faces pressure apparatus, wherein, the first area portion
Divide and be aligned with the surface of the first main region of power semiconductor component on the direction of substrate normal.
Preferably, attachment device is embodied as such as substantially from membrane complex known in the art, including conductive film and
Electrical insulating film, wherein, switching device, attachment device in a manner that positive lock or material combine, with the side of coincident circuit
Formula internally connects.
In particular it is preferred that, the pressure span of second portion body the normal of the substrate direction projection complete
In the surface of the power semiconductor component.
Pressure apparatus is pressed in the second area part of attachment device by another pressure span of a second portion body
On, the second area part faces pressure apparatus, wherein second area part projection cloth in the normal direction of substrate
The outer side surface in all power semiconductor components is put, then is especially advantageous.This means the second portion body or
The multiple second portion body is only pressed on the region beside power semiconductor component.
Preferably, the surface region of first area part for the surface region on power semiconductor part surface distributed extremely
Few 25%, especially at least 50%.In this example, the region of power semiconductor part can be regarded as meaning its whole region
Degree, that is, be not only terminal or contact area.
Arrangement according to the invention is embodied as including above-mentioned electronic switching device, is introduced including cooling device and including pressure
Device, wherein, which is directly or indirectly supported on cooling device, and preferred center, to pressure apparatus
Upper introducing pressure, and therefore switching device is connected to cooling device in a manner of positive lock.
Similar, it is particularly due to effective pressure and introduces, heat-conducting layer, especially thermal conducting paste can have and be less than 20
Micron thickness, especially less than 10 microns, especially less than 5 microns, its can be arranged between substrate and cooling device, particularly
It is disposed between the base part of power semiconductor component and cooling device.
Equally it may be preferred that cooling device is the substrate (preferably metal substrate) or radiator of power semiconductor modular.
Certainly, except non-self exclusion, the feature of above-mentioned single form can be implemented multiplely.Particularly, in each electric power electricity
In sub switch device or its arrangement, power semiconductor component can be multiple.
Self-evident, different structure of the invention can individually or any combination is realized, to be improved.Particularly,
Feature above-mentioned and being illustrated below and explain, regardless of whether being illustrated in the context of pressure apparatus to them, electric power electricity
Sub switch device or arrangement can not only be used in shown combination, additionally it is possible in other combinations or by their own,
It is made without departing from the scope of the present invention.
Description of the drawings
It is of the invention other explanations, favourable in Fig. 1 into the description below of illustrative embodiments illustrated in fig. 10
Description and feature become more to understand.
Fig. 1 and Fig. 2 shows pressure apparatus according to the present invention in transverse sectional view.
Fig. 3 shows pressure apparatus according to the present invention in plan view.
Fig. 4 shows pressure bodies in 3-D view.
Fig. 5 and Fig. 6 shows another 3-D view of pressure apparatus according to the present invention.
Fig. 7 shows arrangement according to the invention in an exploded view, including electronic power switch device according to the present invention.
Fig. 8 and Fig. 9 shows electronic power switch device according to the present invention with non-assembled state and assembled state respectively.
Figure 10 shows the plan view of electronic power switch device in different sections.
Specific embodiment
Fig. 1 and Fig. 2 shows the pressure apparatus according to the present invention for electronic power switch device in transverse sectional view
5.In this example, pressure apparatus 5 has main body 50, and main body 50 has the multiple appearances realized in the same manner in these structures
Device device 500.50 notch based on the realization of case 500.
In addition, pressure apparatus 5 has multiple pressure bodies 52, each pressure bodies 52 are allocated to a notch, i.e.,
The case 500 of main body 50, and each pressure bodies 52 are arranged to be arranged therein, and refer to Fig. 2.In the example
In, each pressure bodies 52 have the first rigid element body 54, are preferably made of high-temperature resistance plastice, are preferably thermoplasticity modeling
Material, particularly polyphenylene sulfide.In another notch 540 of first portion's body 54, second portion body is arranged in such a way
56, it is protruded in the direction away from the main body 50 distributed from the notch 540.
Each second portion body 56 is made of elastomer, is preferably silicone elastomer, particularly crosslinked fluid silicones,
And another cut is arranged in by bicomponent injection molding (two-component plastic injection-moulding) method
In mouth 540.In this configuration, second portion body 56 is cut with the mat-like fashion with applanation region 560,562 from another
Mouth 540 protrudes.
Attached drawing only shows two change case of pressure bodies with example here, high with different first portion's bodies
Degree, to form the parallel offset of the pressure span of the second portion body of different pressures body, refers to Fig. 8 and Fig. 9.With these
Effect ground, the depth that the thickness of second portion body can also change either main body notch can change or these variations are arbitrary
Desirable combination.
The main body 50 of pressure apparatus 5 according to the present invention preferably has many notch, i.e. case 500, with n
The rectangular mode of × m matrix forms is arranged.In this example, pressure bodies 52 are not required to be arranged in each notch.
Preferably, pressure bodies 52 are arranged with its first portion's body 54 in a manner of positive lock or active lock, this sentences pressure lock
The fixed reversible form being clamped and connected.It is particularly advantageous that main body 50 and pressure bodies 52 can be therefore with specific application modes
It is assembled, is shown by the arrow of Fig. 1.Then, Fig. 2 shows the main body assembled by this method 50, together with the pressure arranged
Body 52 forms pressure apparatus 5 together.
Fig. 3 shows pressure apparatus 5 according to the present invention in plan view.Similar to Fig. 1 and Fig. 2, this is illustrated, and is had and is cut
Mouthfuls 500 main body 50, notch 500 arranged with the matrix-like fashion of 4 × 2 matrix forms, wherein, notch is respectively in x directions and y side
To equidistant placement.It realizes in different ways herein and pressure bodies 52 is arranged in notch 500.
It is shown in figure, pressure bodies 52 are with general square shape pressure span 560 and with rectangle or circular pressure area
Domain.Respectively there are one first portion's body 54 and two second portion bodies 56 for tool for two pressure bodies 52.In this example, it is shown
The variation gone out is as just the example of the various structures of second portion body 56.
Fig. 4 is substantially shown such as in graphics on the pressure bodies 52 described in Fig. 1 and Fig. 2.Essential area herein
The structure of main body Bao Kuo be connected to, wherein, herein pressure bodies 52, more accurately be pressure bodies 52 first portion's body
54 have interlocking flange 542, and referring to Fig. 6, being formed together with joint part 502 can reverse connection.
Fig. 5 and Fig. 6 shows the other 3-D view of pressure apparatus 5 according to the present invention.In this example, Fig. 5 is shown
The sectional view of the electronic power switch device of power semiconductor modular form, wherein, pressure apparatus 5 is power semiconductor modular
A part for housing 510.In addition, power semiconductor modular has substrate 2, in this field to be conventional, and subsequent
It is more fully described by way of example in attached drawing.In addition, main body 50 is shown respectively in these attached drawings, wherein, the pressure each distributed
Body 52 is largely analogous to the pressure bodies according to Fig. 4, and notch 500 is arranged in by clamping lock connection 502,542
In.
Fig. 7 shows arrangement according to the invention in exploded view is illustrated, including electronic power switch according to the present invention
Device 1.This illustrates the substrate 2 substantially realized with usual manner in the field, and substrate 2 includes dielectric base body 20
With the conductive traces 22 for being disposed thereon and being each electrically insulated from each other, the conductive traces have different potentials, in particular negative
Current potential is carried, also has adminicle, the particularly switch of switching device and measurement, current potential.It is had been shown in particular herein with loaded level
Three conductive traces 22, such as power electronic circuits conventional half bridge topology.
Power semiconductor component 7 is arranged in two conductive traces 22, and power semiconductor component 7 can be with the field
Middle usual manner is embodied as individually switching, for example, MOS-FET or shown here has what is connected in a manner of reverse parallel connection
IGBT.In a manner that conventional material in the field combines, preferably connect 84 by pressure sintering, by power semiconductor part 7,
More accurately it is connected to is distributed in an electrically conductive manner for the first contact area (700, referring to Fig. 2) of its first main region 700
Conductive traces 22.
Switching device 1 inside connection formed by attachment device 3, attachment device 3 be by the film 30 with alternating conductive,
34 and electrical insulating film 32 made of membrane complex.Herein, membrane complex definitely has two layers of conductive film and a layer arrangement two
Insulating film in layer conductive film.In this example, the membrane complex is formed in face of the surface of the membrane complex 3 of substrate 2
The first main region 300, while apparent surface forms the second main region 340 of the membrane complex.Specifically, connection dress
3 conductive film 30,34 is put as inherent structure, and therefore forms conductive traces part insulated from each other.The conductive traces part
Substrate is connected to particularly by each power semiconductor part 7, more accurately for its contact area on the one side away from substrate 2
Conductive traces 22.In this configuration, 82 are connected by pressure sintering, in a manner that material combines, conductive traces part is connected
It is connected to the contact area of substrate 2.
It is connected for external electrical, electronic power switch device 1 has load terminal part and auxiliary terminal member, only shows herein
Go out load terminal part 10,12.By example as it can be seen that the load terminal part is fully embodied as metal forming body 10, pass through contact
Foot, by material combine in a manner of, advantageously connected with being similar to by pressure sintering, metal forming body 10 be connected to substrate 2
Conductive traces 22.Similarly as conventional in the field, be also shown as contact spring 12 load terminal part it is optional
Structure.Substantially, the part of itself of attachment device 3 can be also realized as load terminal part or auxiliary terminal member.Such as door terminal
Or the auxiliary terminal member (not shown) such as sensor terminal is it is also preferred that similar realized with usual manner in the field, particularly with it is upper
The functionally identical mode of load terminal part is stated to realize.
Pressure apparatus 5 is realized according to described in Fig. 1 and Fig. 2, and has main body 50 and pressure bodies 52, pressure bodies 52
It is arranged in the notch 500 of the main body with reversible manner, the pressure bodies include first portion's body 54 and second portion
Body 56 is used as its component.The pressure span 560 of second portion body 56 also realized with mat-like fashion, wherein, second portion sheet
Body 56 is protruded away from main body 50 and towards the direction of substrate 2.
In addition, the arrangement also has radiator 4, surface is covered by heat-conducting layer 40, therefore, electronic power switch device 1,
More accurately it is arranged in for its substrate 2 on heat-conducting layer 40.Due to the structure of the arrangement according to the present invention, heat-conducting layer 40 can have
There is very small thickness, herein between 5 microns to 10 microns.Substantially, it is fully able to omit heat-conducting layer 40.This depends on table
Face is formed, particularly the roughness of radiator 4.
Optionally and pass through example, the insulating layer 20 of substrate 2 can be implemented as electrical insulating film, and contact laminating is in radiator
On 4.In this case, conductive traces 22 also can be implemented as the multiplanar conductive part being made of copper.Then, the latter advantageously has
There is 0.5 millimeter to 1.0 millimeters of thickness.
The arrangement also has pressure introducing device 6, is arranged in 3 top of attachment device, and has spring element 600,
In the structure, 600 central place of spring element is pressed on pressure apparatus 5.By the pressure introducing device 6, (it is with unshowned
Mode is supported by radiator), pressure 60 is introduced on pressure bodies 50.Pass through press member 52 and their second portion sheet
The pressure span 560 of body 56, the pressure 60 are delivered directly to membrane complex 3 as partial pressure 62 in all cases
The first area part 360 of second main region 340.Then, with the formation that positive lock connects, the region part 360
The contact area of first main region 300 of membrane complex 3 is pressed in the second main region of power semiconductor component 7 indirectly
On the contact area 700 distributed.The direction projection that the region part 360 is placed along the normal N of substrate 2 is partly led in power
In the region 760 of body part 7.
Entire substrate 2 is also pressed on radiator 4 by the pressure 60 being introduced into.Two pressure contacts, attachment device 3 and power
Conductive pressure contact and the pressure contact between substrate 2 and radiator 4 between semiconductive pieces 7, in all cases in substrate 2
And be also power semiconductor part 7 normal N direction on act.Therefore, first, partly led with power in attachment device 3
Efficient positive lock is formed between body part 7 and is conductively connected, extremely low contact resistance is presented in the connection.Second, in substrate 2
The heat transfer that similar efficiencies are formed simultaneously between radiator 4 is connected, and cloth is directed at herein due to applying stressed pressure bodies 50
It puts, which accurately forms most effective heat transfer at position, that is, power semiconductor component 7 with highest caloric value.Cause
This, the material that can omit large area between substrate 2 and radiator 4 is combined connection, the connection in this field to be conventional and
And it is difficult to durability.
Fig. 8 and Fig. 9 each represents the sectional view of electronic power switch device 1 according to the present invention respectively, respectively with non-group
Dress state, which is similar to, to be shown in FIG. 7 and describes and with assembled state, be applied with the state of pressure on pressure apparatus 5, show
Go out and describe,.
Attached drawing herein shows substrate 2, including an insulating layer 20 and two conductive traces 22.Conductor mark on the right
On line 22, the power semiconductor component 7 for being embodied as power diode is disposed with, and power semiconductor component 7 passes through material knot
It closes connection, connect 84 herein for pressure sintering, be conductively attached to conductive traces 22.
Power semiconductor component 7 is more accurately its contact area 700 away from the second main region of substrate 2,
The conductive traces 22 on the left side are conductively attached to by attachment device 3.For this purpose, attachment device 3 has the first conductive film 30,
In, the contact area of the first conductive film 30 only passes through positive lock here with the corresponding contact area of power semiconductor component 7
(but it is not limited to this) is connected to realize.
The positive lock connects the second main region 340 by being introduced directly into attachment device (being herein membrane complex 3)
The partial pressure 62 of first area part 360 formed.Each contact position of positive lock connection is preferably provided with golden watch herein
The au film coating in face, particularly several millimeters, since they have optimal contact performance and contact resistance.In addition, according to EN
In various situations definite ISO 4287, each contact position of positive lock connection has the roughness depth (Rz) less than 5 microns
(especially less than 2 microns) and the mean roughness (especially less than 0.5 micron) less than 1 micron.
Second contact area of power semiconductor component 7 is conductively attached to left side conductive traces 22.For this purpose, membrane complex
3 the first metal film 30 from contact position of the contact position of power semiconductor component 7 extension as far as left side conductive traces 22
222.Connection between the contact position 322 of attachment device 3 and the contact position 222 of the conductive traces 22 of substrate 2 is to force to lock
Determine mode to be formed.For this purpose, another part pressure 62 of the pressure bodies 52 distributed of pressure apparatus 5 is introduced in conductive traces
22 with the contact position 222,322 of metal film 30.Therefore, in this case, partial pressure 62 is applied to the of attachment device
On the second area part 362 of two main regions 340, as a result, the contact area 322 of the first conductive film 30 is crushed on left side conductor
On the contact area 222 of trace 22, and it is conductively connected with it in a manner of positive lock.In this case, Fig. 9 is schematic
The deformation of the second portion body 56 of pressure bodies 52 under pressure is shown.
In order to compensate for first area part 360 caused by the thickness as power semiconductor component compared with second area part
362 offsets in height 382, referring to Fig. 1 and Fig. 2, left side first portion body has the height 580 with the right first portion body
Compared to higher height 582.It is preferred that but it is not that the difference of two part bodies of complete needs in height corresponds exactly to height
Offset 382.It is fully acceptable here that difference range, which is up to 10% or even typically up to 25%,.
As between the contact position 222,322 and metal film 30 of conductive traces 22 positive lock connection alternative embodiment,
The connection also can be implemented as some other connections conventional in pressure sintering connection or the field.
Attachment device 3 also has electrical insulating film 32 and another conductive film 34, they interact and form electronic power switch
The inside connection of the other coincident circuit of device 1.Pass through the electroplating ventilating hole 320 of the electrical insulating film 32 between conductive film 30,34
Also show in this example.
In addition, it is preferably gelatinous megohmite insulant 38 that electronic power switch device 1, which also has, it is arranged in substrate 2, connects
In gap between connection device 3 and power semiconductor part 7.This leads for internal electrical isolation, particularly the first of attachment device 3
Electrical isolation between electrolemma 30 and the right conductive traces 22 of substrate 2.
Figure 10 shows the plan view of electronic power switch device 1 in different cross section.Two are illustrated according to the section of Figure 10 a
A power semiconductor component 7, is usually placed in the same conductive traces of substrate, but which is not shown.It is not restricted to one
As situation, this includes transistor, has central door end regions and the transmitting end regions adjacent with the latter and with cathode terminal
The diode in region.
Figure 10 b show the conductive film 30 of the first inherent structure of attachment device 3.It forms transistor emission end regions and two
Being conductively connected between the cathode end regions of pole pipe.In this example, notch is performed for the door terminal area of transistor.
Figure 10 c show the second of attachment device 3 conductive film 34 inherently constructed.This forms the door terminal area with transistor
Be conductively connected.
Figure 10 d show distribution to the overlay area of the contact element of the contact device of power semiconductor component 7, wherein, by
In its square basic configuration, only one contact distributes to transistor and due to its rectangular basic shape, two contact element
It distributes to diode.Each overlay area is correspondingly connected with these first area parts 360 in the second main region 340 of device 3,
The part is directed at arrangement with power semiconductor component in normal direction, and extend out to here on each power semiconductor part.This
Clearly, the area of overlay area, that is, the maximum for introducing the region overlay power semiconductor component region of pressure can at place
Energy part, and without departing from the region.
Claims (15)
1. one kind is used for the pressure apparatus (5) of electronic power switch device (1), including main body (50), main body (50) tool
The multiple containers device (500) of pressure bodies (52) is useful for, wherein, each pressure bodies (52) are embodied as having the first rigid portion
Point body (54) and second spring elastic part body (56), wherein, the pressure bodies (52) by can reverse connection be arranged in
In the case (500) of the main body (50), and each second portion body (56) is in the separate main body (50)
Direction is stretched out from the first portion's body (54) distributed.
2. pressure apparatus according to claim 1, wherein
It is described can reverse connection is in a manner of positive lock or active lock mode is realized, be especially embodied as clamping lock connection (502,542)
Or it is embodied as being clamped and connected.
3. the pressure apparatus according to any one in preceding claims, wherein
The different embodiments of first portion's body (52) have different height (580,582).
4. the pressure apparatus according to any one in preceding claims, wherein
First portion's body (54) includes high-temperature resistance plastice, is preferably thermoplastic, is particularly polyphenylene sulfide, and institute
Stating second portion body (56) includes elastomer, is preferably silicone elastomer, particularly crosslinked fluid silicones.
5. pressure apparatus according to claim 4, wherein
The second portion body (56) is partially positioned in the notch of first portion's body (54), and is cut from described
Mouth stretches out, and the second portion body (56) is particularly mat-like fashion.
6. the pressure apparatus according to any one in preceding claims, wherein
The main body (50) is embodied as the housing of power semiconductor modular or a part for housing.
7. the pressure apparatus according to any one in preceding claims, wherein
In each case, the multiple containers device (500) of the main body (50) is with the matrix-like fashion cloth of n × m matrix forms
It puts, and in this example, the case (500) is preferably equally spaced apart from one another.
8. a kind of electronic power switch device (1), including substrate (2), including attachment device (3) and including according to foregoing
The pressure apparatus (5) of any one claim,
Wherein, the substrate has the conductive traces (22) being electrically insulated from each other, and power semiconductor component (7) is led with its own
Region (70) is wanted to be arranged on a conductive traces (22), and is conductively connected thereto,
Wherein, by the pressure span (560) of a second portion body (56), the pressure apparatus (5) is pressed in described
On the first area part (360) of attachment device (3), the first area part faces the pressure apparatus, wherein, described the
One region part (360) is arranged to the surface of the first main region of the power semiconductor component (7) (70) (760) in institute
It states and is aligned on normal (N) direction of substrate (2).
9. switching device according to claim 8, wherein
The attachment device (3) is embodied as membrane complex, and the membrane complex includes conductive film (30,34) and electrical insulating film
(32), wherein, the switching device is internally connected the attachment device (3) in a manner of coincident circuit.
10. switching device according to claim 8 or claim 9, wherein
The pressure span (560) of the second portion body (56) the normal (N) of the substrate (2) direction projection complete
In the surface of the power semiconductor component (7) (760).
11. the switching device according to any one in claim 8 to 10, wherein
By another pressure span (562) of a second portion body (56), the pressure apparatus (5) is pressed in the company
On the second area part (362) of connection device (3), the second area part faces the pressure apparatus (5), wherein, it is described
Second area part (362) is arranged to the direction projection in the normal (N) of the substrate (2) in all power semiconductor portions
The outside on the surface (760) of part (7).
12. switching device according to claim 11, wherein
The surface region of the first area part (360) is the surface on the surface (760) of power semiconductor part (7) distributed
At least the 25% of region, especially at least 50%.
13. a kind of arrangement including according to the electronic switching device (1) of any one claim in claim 8 to 12,
Including cooling device (4) and including pressure introducing device (6), wherein, the pressure introducing device (6) is by the cooling device
(4) directly or indirectly pressure is introduced on the pressure apparatus (5) by support, the pressure introducing device (6), preferred center
Pressure is introduced, and the switching device (1) is therefore connected to the cooling device (4) in a manner of positive lock.
14. arrangement according to claim 13, wherein
Heat-conducting layer (40) is disposed between the substrate (2) and the cooling device (4), heat-conducting layer (40) has micro- less than 20
The thickness of rice, especially less than 10 microns of thickness, especially less than 5 microns of thickness.
15. the arrangement according to claim 13 or 14, wherein
The cooling device (4) is the substrate or radiator of power semiconductor modular, and the substrate is preferably metal substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102016123113.4 | 2016-11-30 | ||
| DE102016123113.4A DE102016123113B3 (en) | 2016-11-30 | 2016-11-30 | Printing device for a power electronic switching device, switching device and arrangement hereby |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108122864A true CN108122864A (en) | 2018-06-05 |
| CN108122864B CN108122864B (en) | 2023-12-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711238191.5A Active CN108122864B (en) | 2016-11-30 | 2017-11-30 | Pressure device for a power electronic switching device, switching device and arrangement thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108122864B (en) |
| DE (1) | DE102016123113B3 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5808868A (en) * | 1995-09-08 | 1998-09-15 | Siemens Aktiengesellschaft | Electronic module with power components |
| US20030227750A1 (en) * | 2002-06-10 | 2003-12-11 | Visteon Global Technologies, Inc. | Liquid cooled metal thermal stack for high-power dies |
| US20100252922A1 (en) * | 2009-04-03 | 2010-10-07 | Infineon Technologies Ag | Power Semiconductor Module, Power Semiconductor Module Assembly and Method for Fabricating a Power Semiconductor Module Assembly |
| CN104157622A (en) * | 2013-05-14 | 2014-11-19 | 赛米控电子股份有限公司 | Electronic power switching device and arrangement structure with the same |
| CN105097716A (en) * | 2014-05-09 | 2015-11-25 | 赛米控电子股份有限公司 | Power semiconductor module with switching device and assembly |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4233645A (en) * | 1978-10-02 | 1980-11-11 | International Business Machines Corporation | Semiconductor package with improved conduction cooling structure |
| EP2458632B1 (en) * | 2010-11-24 | 2013-07-31 | Gefran S.p.A. | Heat sink module for electronic semiconductor devices |
-
2016
- 2016-11-30 DE DE102016123113.4A patent/DE102016123113B3/en active Active
-
2017
- 2017-11-30 CN CN201711238191.5A patent/CN108122864B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5808868A (en) * | 1995-09-08 | 1998-09-15 | Siemens Aktiengesellschaft | Electronic module with power components |
| US20030227750A1 (en) * | 2002-06-10 | 2003-12-11 | Visteon Global Technologies, Inc. | Liquid cooled metal thermal stack for high-power dies |
| US20100252922A1 (en) * | 2009-04-03 | 2010-10-07 | Infineon Technologies Ag | Power Semiconductor Module, Power Semiconductor Module Assembly and Method for Fabricating a Power Semiconductor Module Assembly |
| CN104157622A (en) * | 2013-05-14 | 2014-11-19 | 赛米控电子股份有限公司 | Electronic power switching device and arrangement structure with the same |
| CN105097716A (en) * | 2014-05-09 | 2015-11-25 | 赛米控电子股份有限公司 | Power semiconductor module with switching device and assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102016123113B3 (en) | 2017-11-09 |
| CN108122864B (en) | 2023-12-22 |
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