CN111551514A - High-sensitivity terahertz sensor capable of detecting trace cells and detection method - Google Patents
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- 238000001514 detection method Methods 0.000 title abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000000737 periodic effect Effects 0.000 claims abstract description 6
- 229920001721 polyimide Polymers 0.000 claims description 29
- 229920002120 photoresistant polymer Polymers 0.000 claims description 26
- 239000004642 Polyimide Substances 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 239000003989 dielectric material Substances 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000002791 soaking Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 238000001328 terahertz time-domain spectroscopy Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 238000002474 experimental method Methods 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
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- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/10—Investigating individual particles
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
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Abstract
The invention discloses a high-sensitivity terahertz sensor capable of detecting trace cells, which comprises a substrate and a plurality of periodic structure metamaterials growing on the substrate, wherein a unit structure of the periodic structure comprises two open metal rings and a metal wire. The invention also discloses a method for using the terahertz sensor for detecting trace cells, and single cells are placed on the unit structure. The invention realizes the detection of the terahertz wave band on the trace cells.
Description
Technical Field
The invention relates to a terahertz sensor, in particular to a high-sensitivity terahertz sensor capable of detecting trace cells and a detection method.
Background
The steady development of terahertz technology over the last decades has fueled many studies on terahertz applications, one of which is the biomedical application of terahertz. Terahertz photon energy is only of meV magnitude, is much lower than the energy of X-rays, cannot damage a detected object, and can be applied to nondestructive detection. And the polar molecules have strong absorption to terahertz, and the terahertz can be deeply researched by analyzing a characteristic spectrum. In addition, the rotation, vibration energy level and intermolecular weak interaction energy level of many molecules are just in the terahertz waveband, so that the terahertz technology is very favorable for biological research.
The design of functional devices that can detect cells is critical to biomedical research. Fluorescent labeling methods that incorporate a label into cells are now widely used. Although the method is mature, the added marker can affect the properties of the cells, and the fluorescence labeling method is tedious and time-consuming, so the method is not the optimal method for detecting the cells.
The metamaterial and plasmon-based structure enhances the interaction of light and a measured substance, can cause the change of spectral response, and is used for cell label-free measurement of terahertz wave bands. However, many of the envisaged applications in the biomedical or safety field require the detection of minute amounts of cells, and the sensitivity of the conventional methods is not high enough to support the detection of minute amounts of cells.
Disclosure of Invention
The purpose of the invention is as follows: in order to solve the problems in the prior art, the invention provides a high-sensitivity terahertz sensor capable of detecting trace cells and a detection method, and detection of the trace cells by a terahertz waveband is realized.
The technical scheme is as follows: in order to achieve the above object, a first technical solution of the present invention is a high-sensitivity terahertz sensor capable of detecting a trace amount of cells, including a substrate and a plurality of periodic structure metamaterials (meta) grown on the substrate, wherein a unit structure of the periodic structure includes two split rings (SRRs) and a metal wire. The characteristic that near-field coupling causes electromagnetic induction-like transparent (EIT in English) window shift and has high sensitivity is generated by utilizing the characteristics that the resonance frequencies of the split ring and the metal wire resonators are close but the resonance Q values are different, so that the detection of external fine change is realized.
Further, the substrate of the metamaterial is a dielectric material.
Further, the dielectric material is Polyimide (abbreviated as PI).
Further, the thickness of the dielectric material is 3-10 μm.
Further, the thickness of the dielectric material is 5 μm. The thinner the thickness, the higher the sensitivity, but the thinner the softer, the less good the operation, so the preferred thickness is 5 μm.
Furthermore, the two open metal rings and the metal wire are made of gold.
The second technical scheme provided by the invention is a method for detecting trace cells by using a high-sensitivity terahertz sensor capable of detecting trace cells, wherein single cells are placed on the surface of the unit structure. The provided window deviation can reach 13GHz, and a terahertz time-domain spectroscopy system can be used for realizing measurement.
The third technical scheme provided by the invention is a method for preparing a high-sensitivity terahertz sensor capable of detecting trace cells, which comprises the following steps:
1) cleaning the substrate;
2) coating a polyimide film on the substrate to obtain a polyimide film layer with the thickness of 5 mu m on the substrate;
3) coating a photoresist LOR10B on the polyimide film, and drying;
4) coating a photoresist AZ1500 on the photoresist LOR10B, and drying;
5) carrying out ultraviolet exposure on the photoresist, developing by positive photoresist developing solution, and drying;
6) evaporating metal on the photoresist AZ1500 and the exposed polyimide film;
7) soaking the substrate with the evaporated metal in an acetone solution to strip and remove the remaining photoresist AZ1500 and the metal on the photoresist AZ1500, and then removing the remaining photoresist LOR10B by using a developing solution;
8) removing the substrate: and peeling the substrate and the polyimide film.
Further, in the step 2), the polyimide with the viscosity of 3600 centipoises is spin-coated twice at the rotating speed of 600/2400rpm for 6/60s, and the polyimide is dried until the polyimide is completely cured.
Further, in the step 8), the baking and curing are carried out for 2 minutes at 90 ℃.
Has the advantages that: compared with the traditional structure, the terahertz sensor designed by the invention adopts two split rings and one metal wire to generate near-field coupling to form an electromagnetic induction-like transparent window, has the characteristic of high sensitivity, and can realize the measurement of only a single cell on a trace or even unit structure.
Drawings
FIG. 1 is a schematic structural diagram of a terahertz sensor unit capable of detecting trace cells;
FIG. 2 is a schematic cross-sectional view of a terahertz sensor capable of detecting trace cells;
FIG. 3 is a flow chart for manufacturing a terahertz sensor;
FIG. 4 is a graph of transmission coefficients calculated after placing a single cell on a unit structure.
Detailed Description
The present invention is further illustrated by the following figures and specific examples, which are to be understood as illustrative only and not as limiting the scope of the invention for use, and modifications of various equivalent forms of the invention which are obvious to those skilled in the art, after reading the present disclosure, are intended to be included within the scope of the appended claims.
Firstly, design high-sensitivity terahertz sensor capable of detecting trace cells
In order to design a high-sensitivity terahertz sensor capable of detecting trace cells, various metamaterial structures are researched. Polyimide (PI) was selected as the substrate with a thickness of 5 μm, considering that it is advantageous to improve the sensor sensitivity with a thinner substrate. The polyimide material is selected to be beneficial to the implementation of the experimental work in the future. The split ring and the metal wire adopt a gold structure which is commonly used in metamaterials, and the method is also beneficial to the implementation of experiments in the future. The sizes of the split ring and the metal wire and the coupling distance (about 5-10 mu m) between the split ring and the metal wire are adjusted, so that the respective resonant frequencies of the split ring and the metal wire are close to each other, the near-field coupling is caused to generate an electromagnetic induction-like transparent window, and meanwhile, the peak value of the transparent window can be adjusted through the difference of the near-field coupling distance between the split ring and the metal wire.
In order to determine the specific parameters of the structure, simulation is carried out by using CST software, and the structure and the size designed according to the attached figures 1 and 2 are simulated. The electromagnetic field propagates in the z direction, and specific parameters are determined according to a transmission coefficient curve obtained by simulation, wherein the specific parameters are P is 120 μm, A is 31 μm, L is 112 μm, W is 5 μm, G is 2 μm, S is 7.5 μm, H1 is 5 μm, H2 is 200nm, and the widths of the two open rings are the same as the width of the metal wire and are 5 μm. After simulation is determined, the terahertz sensor is manufactured according to the flow process shown in fig. 3, and the specific steps are as follows:
1) cleaning a silicon substrate;
2) coating a polyimide film on the silicon substrate, spin-coating polyimide with the viscosity of 3600 centipoises twice at the rotating speed of 600/2400rpm for 6/60s, and drying until the polyimide is completely cured to obtain a polyimide film with the thickness of 5 microns on the silicon substrate;
3) coating a photoresist LOR10B on the polyimide film, rotating at 600/4000rpm for 6/40s, and baking at 150 ℃ for 5 minutes to dry;
4) coating a photoresist AZ1500 on the photoresist LOR10B at the rotating speed of 600/400rpm for 6/40s, and baking at 90 ℃ for 2 minutes for drying;
5) carrying out ultraviolet exposure on the photoresist for 10s by using a mask plate with a structure shown in the figure 1 in multiple periods, developing by using an orthofilm developing solution for 14s, and baking for 2 minutes at 90 ℃;
6) evaporating metal on the photoresist AZ1500 and the exposed polyimide film: because gold has poor adhesiveness and is easy to fall off, a layer of titanium with the thickness of 20nm is evaporated first, and then a layer of gold with the thickness of 200nm is evaporated;
7) soaking the silicon substrate with the evaporated metal in an acetone solution to strip and remove the remaining photoresist AZ1500 and the metal on the photoresist AZ1500, and then removing the remaining photoresist LOR10B by using a developing solution;
8) removing the silicon substrate: and (3) soaking the sample in a diluted HF solution for about 5 minutes, stripping the silicon substrate and the polyimide film, and baking and curing at 90 ℃ for 2 minutes.
Scheme for detecting trace cells by using high-sensitivity terahertz sensor capable of detecting trace cells
A trace amount of cells are placed on the surface of the Terahertz sensor, and the transmission spectrum of the Terahertz sensor is measured by a Terahertz Time Domain Spectroscopy (THz-TDS) system.
Third, result and discussion of high-sensitivity terahertz sensor capable of detecting trace cells
The most important application aspect of the high-sensitivity terahertz sensor capable of detecting trace cells designed by the invention is sensing measurement of biological cells. FIG. 4 is a graph of the transmission coefficient for an empty sensor and a single cell placed on a cell structure. The single cell diameter for the simulation was 10 μm, which is a typical cell size. Since the cell size is 10 μm in diameter, a maximum of 144 cells can be accommodated in the unit structure if a layer of cells is closely attached to the sensor surface. In contrast, when only a single cell exists on the unit structure, only a trace amount of cells exist on the whole surface of the terahertz sensor. The refractive index of the cell is assumed to be 2 in the simulation, and the value is similar to the refractive index of the cell in the terahertz frequency band mentioned in the literature. As can be seen from the figure, before and after a single cell is placed on the unit structure, the frequency change of the transparent window reaches 13GHz, which is far greater than the frequency resolution of the terahertz time-domain spectroscopy system (THz-TDS), and further shows that the high-sensitivity terahertz sensor capable of detecting trace cells designed by the invention can be used for detecting trace cells.
In a word, a metamaterial terahertz sensor based on a polyimide substrate is designed, and the advantage that trace cells can be detected is mainly reflected. According to actual requirements, the thickness of the substrate, the unit structure and the structural parameters of the metal can be optimally designed, and the terahertz sensor with other frequencies or more excellent performance is obtained. Therefore, the sensor is widely applied to terahertz biosensing.
Claims (10)
1. The high-sensitivity terahertz sensor capable of detecting the trace cells is characterized by comprising a substrate and a plurality of periodic structure metamaterials growing on the substrate, wherein a unit structure of the periodic structure comprises two open metal rings and a metal wire.
2. The sensor of claim 1, wherein the substrate is a dielectric material.
3. The sensor of claim 2, wherein the dielectric material is polyimide.
4. The sensor of claim 2, wherein the thickness of the dielectric material is 3-10 μm.
5. The sensor of claim 4, wherein the thickness of the dielectric material is 5 μm.
6. The sensor of claim 1, wherein the two open metal rings and the metal wire are made of gold.
7. A method for using the high-sensitivity terahertz sensor as defined in any one of claims 1 to 6 for detecting trace cells, wherein a single cell is placed on the surface of the unit structure.
8. A method for preparing the high-sensitivity terahertz sensor as defined in any one of claims 1 to 6, comprising the steps of:
1) cleaning the substrate;
2) coating a polyimide film on the substrate to obtain a polyimide film layer with the thickness of 5 mu m on the substrate;
3) coating a photoresist LOR10B on the polyimide film, and drying;
4) coating a photoresist AZ1500 on the photoresist LOR10B, and drying;
5) carrying out ultraviolet exposure on the photoresist, developing by positive photoresist developing solution, and drying;
6) evaporating metal on the photoresist AZ1500 and the exposed polyimide film;
7) soaking the substrate with the evaporated metal in an acetone solution to strip and remove the remaining photoresist AZ1500 and the metal on the photoresist AZ1500, and then removing the remaining photoresist LOR10B by using a developing solution;
8) removing the substrate: and peeling the substrate and the polyimide film.
9. The method for preparing a high-sensitivity terahertz sensor according to claim 8, wherein in the step 2), polyimide with a viscosity of 3600 cps is spin-coated twice at a rotation speed of 600/2400rpm for 6/60s, and is dried until the polyimide is completely cured.
10. The method for manufacturing a high-sensitivity terahertz sensor according to claim 8, wherein in the step 8), the wafer is baked and cured at 90 ℃ for 2 minutes.
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Cited By (4)
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|---|---|---|---|---|
| CN112014913A (en) * | 2020-09-07 | 2020-12-01 | 中国计量大学 | Terahertz artificial surface plasma excitation device and gas detection device |
| CN112934281A (en) * | 2021-03-20 | 2021-06-11 | 山东大学 | Artificial surface plasmon micro-fluidic detection chip structure based on periodic structure and preparation and detection methods thereof |
| CN113237846A (en) * | 2021-05-06 | 2021-08-10 | 南京大学 | Preparation of pixilated terahertz spectrum sensing chip and preparation method thereof |
| CN114062301A (en) * | 2021-11-12 | 2022-02-18 | 西南科技大学 | Dual-band metamaterial terahertz microfluidic sensor |
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| CN112934281B (en) * | 2021-03-20 | 2022-11-08 | 山东大学 | Artificial surface plasmon micro-fluidic detection chip structure based on periodic structure and preparation and detection methods thereof |
| CN113237846A (en) * | 2021-05-06 | 2021-08-10 | 南京大学 | Preparation of pixilated terahertz spectrum sensing chip and preparation method thereof |
| CN114062301A (en) * | 2021-11-12 | 2022-02-18 | 西南科技大学 | Dual-band metamaterial terahertz microfluidic sensor |
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Application publication date: 20200818 |