CN112540430B - PDMS flexible force-sensitive sensor based on waveguide grating and preparation method thereof - Google Patents
PDMS flexible force-sensitive sensor based on waveguide grating and preparation method thereof Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
- G01L1/242—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet the material being an optical fibre
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
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- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
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- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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Abstract
The invention discloses a PDMS flexible force-sensitive sensor based on a waveguide grating and a preparation method thereof. Cleaning the silicon wafer with acetone, alcohol and deionized water and drying; coating photoresist on the surface of a silicon wafer and drying; carrying out mask photoetching and developing on the silicon wafer, and transferring the pattern of the mask plate to a photoresist film; performing dry etching on silicon and removing the photoresist film to obtain a silicon template; mixing PDMS liquid and curing liquid in different proportions according to the flexibility requirement to obtain a mixed liquid, and controlling the ratio of the PDMS liquid to the curing liquid to be 5: 1-15: 1; fully stirring and completely removing air in the mixed solution under vacuum; and placing the silicon template on the surface of the mixed solution to fully infiltrate the surface of the silicon template and the mixed solution, and then heating the silicon template and the mixed solution together to fully solidify the mixed solution and uncover the silicon template to obtain the PDMS optical waveguide and grating structure.
Description
Technical Field
The invention relates to a PDMS flexible force-sensitive sensor based on a waveguide grating and a preparation method of the PDMS flexible force-sensitive sensor based on the waveguide grating, belonging to the technical field of force-sensitive sensors.
Background
With the development of the sensing technology, the application field of the sensor is wider, the social requirements are increasingly rich, and the requirements on the precision, the sensitivity, the stability and the like of the force-sensitive sensor are higher and higher. At present, optical sensors for measuring stress include fiber bragg grating stress sensors, silicon-based optical MEMS pressure sensors, and the like. However, the optical sensor in the prior art is easily affected by the change of the light source, for example, the measurement result of the Mach-Zehnder (M-Z) interference type optical pressure sensor is easily affected by the attenuation of the light source, the wavelength drift and the like[1]. The silicon-based optical MEMS pressure sensor is mainly detected through the change of output light intensityStress is measured, but there is a non-linear relationship between pressure and light intensity.
At present, many materials are used for manufacturing flexible sensors, and mainly include metal materials, inorganic semiconductor materials, organic materials and flexible substrates. Inorganic semiconductor materials include many, and scientists have been aware of manufacturing a flexible sensor by using ZnO and ZnS as materials, and the flexible sensor utilizes the photoelectric effect, but the difficulty is that the flexibility of the materials is limited; the flexibility of the organic material is better, but the sensitivity to piezoresistive and capacitance signals is lower than that of a metal material, and the development of the organic material in the high-precision measurement field is limited; the materials of the flexible substrate are very limited, and PDMS is used successfully[2]. The advantages are that the thermal-optical coefficient of PDMS polymer is larger, when the PDMS polymer is used for preparing a thermo-optical tuning device, the loss is reduced, and the waveguide structure is easier to realize the athermalization of the waveguide device[3]And the flexible force-sensitive sensor has low cost, high elasticity, good rheological property, good tensile property and life compatibility, and is widely applied to the application aspect of the flexible force-sensitive sensor.
In a large number of conventional PDMS flexible force-sensitive sensors, they may be subject to electromagnetic interference from power supplies, accessory instruments and charged objects due to their electrical signal-based, plus metallic components, blocking light. Compared with an electric signal method, the PDMS optical force sensor is more suitable for the application of large area, electromagnetic interference resistance and high visual transparency.
Reference to the literature
[1] A contact type linear stress sensor based on a micro-ring structure and a stress detection method and a process thereof;
[2] how the flexible sensor suddenly does not fire, the source: an OFweek electronic engineering network;
[3] fabrication of polymer gratings and analysis of diffraction properties [ Master thesis ] State national optical engineering Nanchang aviation university 2016 (academic year) TN 305.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a PDMS flexible force-sensitive sensor based on a waveguide grating, which can effectively avoid electromagnetic interference, realizes high-sensitivity force-deformation induction by utilizing the change of light wave wavelength, and has the characteristics of flexibility, transparency and life compatibility.
In order to achieve the aim, the invention provides a preparation method of a PDMS flexible force-sensitive sensor based on a waveguide grating, which comprises the following steps:
scrubbing the silicon wafer by using acetone to remove organic substances on the silicon wafer;
washing the silicon wafer with alcohol and deionized water respectively, and drying the silicon wafer;
coating photoresist with a certain thickness on the surface of a silicon wafer;
placing the silicon wafer after the glue is homogenized on a baking pan to be baked for a period of time, and forming a photoresist film by using photoresist on the surface of the silicon wafer;
carrying out mask photoetching and developing on a silicon wafer with a photoresist film, and transferring the pattern of a mask plate to the photoresist film;
and (3) performing dry etching on silicon to form a PDMS optical waveguide and grating structure: the grating structure is designed by establishing a relation between the filtering wavelength and the grating parameters:
Λin order to be the period of the grating,λin order to filter the wavelength of the light,N eff is the effective refractive index of the grating region,mthe diffraction order of the grating used;
etching according to the etching depth of the needed grating;
removing the photoresist film to obtain a silicon template;
mixing PDMS liquid and curing liquid in different proportions according to the flexible requirement to obtain a mixed liquid, controlling the ratio of PDMS liquid to curing liquid to be 5: 1-15: 1, fully stirring the mixed liquid, and completely removing air in the mixed liquid under vacuum;
placing the silicon template on the surface of the mixed solution to fully soak the surface of the silicon template and the mixed solution, and then heating the silicon template and the mixed solution together for a period of time to fully solidify the mixed solution;
and (4) removing the silicon template to obtain the PDMS optical waveguide and the grating structure.
Preferably, the silicon wafer is repeatedly scrubbed with acetone to remove organic substances on the silicon wafer, then the silicon wafer is rinsed with alcohol and deionized water, and then the silicon wafer is thoroughly dried at 180 ℃.
Preferably, the photoresist is formed to a thickness of 550-650 nm.
Preferably, the silicon wafer after being homogenized is placed on a baking pan at 100 ℃ for baking for 4 min.
Preferably, the silicon template is placed on the surface of the mixed solution to enable the surface of the silicon template to be fully soaked with the mixed solution, and then the silicon template and the mixed solution are placed at 60-70 ℃ together to be dried for 1 hour to enable the mixed solution to be fully solidified.
A PDMS flexible force-sensitive sensor based on a waveguide grating, which is manufactured according to the method for manufacturing the PDMS flexible force-sensitive sensor of claims 1-5.
Preferentially, the optical waveguide comprises a PDMS optical waveguide and a grating, wherein the PDMS optical waveguide is provided with the grating, the PDMS optical waveguide is a ridge waveguide or a rectangular waveguide, the grating is etched on the PDMS optical waveguide to a certain depth, and the light source and the detector are respectively arranged at two ends of the PDMS optical waveguide.
In the aspect of materials: the materials used in the invention are all organic polymer PDMS. PDMS, a high molecular organosilicon compound, is optically transparent, has excellent flexibility and mechanical properties, and is generally considered to be inert, non-toxic, and non-flammable.
In the structural aspect: the grating structure is formed on the PDMS rectangular waveguide or the ridge waveguide with a certain thickness, the light source and the light detector are respectively positioned at two ends of the PDMS optical waveguide, and the core part is aligned with the PDMS optical waveguide in an end face coupling mode. As shown in fig. 1, a light beam 1 is incident from a light source at one end of the PDMS optical waveguide, a light beam 2 is transmitted from the other end of the PDMS optical waveguide, a detector receives the light beam 2 to detect a change in wavelength, and a light beam 3 is a band filtered by a grating and returns to the incident end.
The technical principle of the invention is as follows: light from the light source enters the PDMS optical waveguide from one end and is transmitted in a specific mode in the PDMS optical waveguide. When the micro-nano grating area of the PDMS optical waveguide is reached, specific grating parameters can generate high reflection to light with a certain wavelength of an incident waveband, and grating filtering is achieved. Specifically, the relationship between the filtering wavelength and the grating parameter is established by the following formula, so as to design the grating structure:
Λin order to be the period of the grating,λin order to filter the wavelength of the light,N eff the effective refractive index of the grating area is related to the grating duty cycle, the groove depth and the PDMS refractive index,mthe diffraction order of the grating used. When the grating area or the whole flexible structure is stressed, grating parameters can be changed, so that the filtering wavelength is changed, the change of the receiving wavelength can be detected on a detector at the other end of the PDMS optical waveguide, and the variation of the filtering wavelength reflects the stress, so that the design of the force-sensitive sensor is carried out.
The invention achieves the following beneficial effects:
(1) PDMS has tunable mechanical deformability (i.e., flexibility); the micro-nano waveguide grating has high deformation sensitivity (namely parameter sensitivity), can generate high-sensitivity deformation conversion to stress, and can realize high-sensitivity mechanical sensing by innovatively combining the micro-nano waveguide grating and the stress.
(2) The sensor is based on the relation between two physical parameters of light and force, so that the sensor has the characteristics of electromagnetic interference resistance and low response time.
(3) The invention has simple sensing structure, low cost, full transparency and flexibility, and is suitable for application in some specific scenes.
Drawings
FIG. 1 is a block diagram of an optical force sensor of the present invention.
Detailed Description
The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The invention comprises a PDMS optical waveguide, a grating area, a light source and an optical detector, wherein a light beam 1 enters from one end of the grating, a light beam 2 exits from the other end of the grating to the detector, the detector detects the wavelength change of the light beam, and a light beam 3 is returned to the entrance end by a waveband filtered by the grating.
The core preparation technology related to the present invention is the preparation of the PDMS flexible waveguide and grating with specific parameters, and two preparation methods will be described as examples. One method is to prepare a silicon master mold with a grating structure by a traditional mask lithography method or an electron beam lithography method, and cure a liquid PDMS material therein to complete the realization of the grating structure. The other method is to directly carry out mask photoetching or electron beam photoetching on the PDMS film and then etch the PDMS film to complete the realization of the grating structure.
Example 1
Using a silicon wafer as a template, carrying out micro-nano processing to manufacture a waveguide and a grating structure:
repeatedly scrubbing the silicon wafer with acetone to remove organic substances on the silicon wafer, washing with deionized water, and completely drying at 180 ℃.
And after the silicon wafer is cleaned, spin-coating photoresist with a certain thickness on the surface of the silicon wafer. Because the grating structure related to the invention reaches the nanometer level, the thickness of the photoresist cannot be too thick, and the photoresist is kept at about 600 nm.
And (3) placing the silicon wafer after glue homogenizing on a baking pan at about 100 ℃ for baking for 4 min.
And carrying out mask photoetching on the silicon wafer with the photoresist film, then developing, and transferring the pattern of the mask plate to the photoresist.
Dry etching of silicon is performed. Etching is carried out according to the etching depth of the needed grating, and finally the photoresist is removed, so that the silicon template is manufactured.
According to the flexibility requirement, PDMS liquid and curing liquid with different proportions are proportioned, the proportion of the PDMS liquid and the curing liquid is controlled to be 5: 1-15: 1, the smaller the proportion of the curing liquid is, the better the flexibility is, and the proportion of the PDMS liquid and the curing liquid in the embodiment takes 5:1 or 7: 1 or 9: 1 or 11: 1 or 13: 1 or 15:1, stirring well, and completely removing air in the solution under vacuum.
And controlling the thickness of the PDMS by using a container, placing the silicon template on the surface of the PDMS to fully infiltrate the surface of the silicon template and the surface of the PDMS, and then placing the silicon template and the PDMS together at 60-70 ℃ for baking for 1h to fully cure the PDMS.
And (4) removing the silicon chip to form the PDMS optical waveguide and the grating structure.
Or the PDMS with a specific required thickness can be spin-coated on the silicon template, and after drying, the silicon template is removed to form the PDMS optical waveguide and grating structure.
Example 2
Photoetching and micro-nano etching are carried out on the cured PDMS, and a PDMS optical waveguide and grating structure is prepared:
firstly, according to the flexibility requirement, the ratio of the PDMS solution to the curing solution is 5: 1-15: 1, the smaller the ratio of the curing solution is, the better the flexibility is, and the ratio of the PDMS solution to the curing solution in the embodiment takes a value of 6: 1 or 8: 1 or 10: 1 or 12: 1 or 14: 1, stirring well, and completely removing air in the solution under vacuum.
Secondly, selecting a clean silicon wafer as a substrate, spin-coating PDMS liquid with a certain thickness on the silicon wafer substrate, and then placing the silicon wafer substrate at 65 ℃ for drying for 40min to fully cure the PDMS.
Thirdly, after cooling, making a mask structure of electron beam resist or photoresist or metal and the like on the surface of PDMS, then carrying out dry etching on PDMS, carrying out etching according to the etching depth of the grating required by the invention, and finally removing the mask layer to form the PDMS optical waveguide and the grating structure.
And fourthly, removing the PDMS from the silicon wafer substrate to obtain the PDMS waveguide and grating structure.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (7)
1. A preparation method of a PDMS flexible force-sensitive sensor based on a waveguide grating is characterized by comprising the following steps:
scrubbing the silicon wafer by using acetone to remove organic substances on the silicon wafer;
washing the silicon wafer with alcohol and deionized water respectively, and drying the silicon wafer;
coating photoresist with a certain thickness on the surface of a silicon wafer;
placing the silicon wafer after the glue is homogenized on a baking pan to be baked for a period of time, and forming a photoresist film by using photoresist on the surface of the silicon wafer;
carrying out mask photoetching and developing on a silicon wafer with a photoresist film, and transferring the pattern of a mask plate to the photoresist film;
and (3) performing dry etching on silicon to form a PDMS optical waveguide and grating structure: the grating structure is designed by establishing a relation between the filtering wavelength and the grating parameters:
Λin order to be the period of the grating,λin order to filter the wavelength of the light,N eff is the effective refractive index of the grating region,mthe diffraction order of the grating used;
etching according to the etching depth of the needed grating;
removing the photoresist film to obtain a silicon template;
mixing PDMS liquid and curing liquid in different proportions according to the flexible requirement to obtain a mixed liquid, controlling the ratio of PDMS liquid to curing liquid to be 5: 1-15: 1, fully stirring the mixed liquid, and completely removing air in the mixed liquid under vacuum;
placing the silicon template on the surface of the mixed solution to fully soak the surface of the silicon template and the mixed solution, and then heating the silicon template and the mixed solution together for a period of time to fully solidify the mixed solution;
and (4) removing the silicon template to obtain the PDMS optical waveguide and the grating structure.
2. The method of claim 1, wherein the silicon wafer is repeatedly scrubbed with acetone to remove organic substances thereon, rinsed with alcohol and deionized water, and thoroughly dried at 180 ℃.
3. The method as claimed in claim 1, wherein the photoresist is formed to have a thickness of 550-650 nm.
4. The method for preparing a PDMS flexible force sensor based on a waveguide grating as claimed in claim 1, wherein the silicon wafer after the spin coating is baked for 4min in a baking pan at 100 ℃.
5. The method for preparing a PDMS flexible force-sensitive sensor based on a waveguide grating as claimed in claim 1, wherein a silicon template is placed on the surface of the mixed solution to fully wet the surface of the silicon template with the mixed solution, and then the silicon template and the mixed solution are baked at 60-70 ℃ for 1h to fully cure the mixed solution.
6. A PDMS flexible force-sensitive sensor based on a waveguide grating is characterized in that the PDMS flexible force-sensitive sensor is manufactured according to the method for manufacturing the PDMS flexible force-sensitive sensor of claims 1 to 5.
7. The PDMS flexible force-sensitive sensor based on the waveguide grating is characterized by comprising a PDMS optical waveguide and a grating, wherein the PDMS optical waveguide is provided with the grating, the PDMS optical waveguide is a ridge waveguide or a rectangular waveguide, the grating is etched on the PDMS optical waveguide to a certain depth, and a light source and a detector are respectively arranged at two ends of the PDMS optical waveguide.
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